Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11064) > Seite 145 nach 185

Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 90 108 126 140 141 142 143 144 145 146 147 148 149 150 162 180 185  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SI1411DH-T1-BE3 SI1411DH-T1-BE3 Vishay Siliconix si1411dh.pdf Description: MOSFET P-CH 150V 420MA SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1N60APBF-BE3 IRFR1N60APBF-BE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ200EP-T1_GE3 SQJ200EP-T1_GE3 Vishay Siliconix sqj200ep.pdf Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.90 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SQJ200EP-T1_GE3 SQJ200EP-T1_GE3 Vishay Siliconix sqj200ep.pdf Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.13 EUR
10+1.90 EUR
100+1.48 EUR
500+1.22 EUR
1000+0.97 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SQJ244EP-T1_GE3 SQJ244EP-T1_GE3 Vishay Siliconix sqj244ep.pdf Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ244EP-T1_GE3 SQJ244EP-T1_GE3 Vishay Siliconix sqj244ep.pdf Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJ204EP-T1_GE3 SQJ204EP-T1_GE3 Vishay Siliconix sqj204ep.pdf Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.83 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SQJ204EP-T1_GE3 SQJ204EP-T1_GE3 Vishay Siliconix sqj204ep.pdf Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8490 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+2.00 EUR
100+1.35 EUR
500+1.08 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SQJ208EP-T1_GE3 SQJ208EP-T1_GE3 Vishay Siliconix sqj208ep.pdf Description: MOSFET DUAL N-CH AUTO 40V PP SO-
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ208EP-T1_GE3 SQJ208EP-T1_GE3 Vishay Siliconix sqj208ep.pdf Description: MOSFET DUAL N-CH AUTO 40V PP SO-
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIHB068N60EF-GE3 SIHB068N60EF-GE3 Vishay Siliconix sihb068n60ef.pdf Description: MOSFET N-CH 600V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 3882 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.45 EUR
50+6.14 EUR
100+5.49 EUR
500+4.77 EUR
1000+4.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQ3585EV-T1_GE3 SQ3585EV-T1_GE3 Vishay Siliconix sq3585ev.pdf Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3585EV-T1_GE3 SQ3585EV-T1_GE3 Vishay Siliconix sq3585ev.pdf Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3031 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.42 EUR
10+4.08 EUR
25+3.74 EUR
100+3.37 EUR
250+3.19 EUR
500+3.08 EUR
1000+3.00 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SQ3457EV-T1_GE3 SQ3457EV-T1_GE3 Vishay Siliconix sq3457ev.pdf Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 14952 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
19+0.93 EUR
100+0.64 EUR
500+0.54 EUR
1000+0.46 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SQJ486EP-T1_GE3 SQJ486EP-T1_GE3 Vishay Siliconix sqj486ep.pdf Description: MOSFET N-CH 75V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ486EP-T1_GE3 SQJ486EP-T1_GE3 Vishay Siliconix sqj486ep.pdf Description: MOSFET N-CH 75V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
12+1.53 EUR
100+1.19 EUR
500+1.01 EUR
1000+0.82 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SQ4937EY-T1_GE3 SQ4937EY-T1_GE3 Vishay Siliconix sq4937ey.pdf Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ4937EY-T1_GE3 SQ4937EY-T1_GE3 Vishay Siliconix sq4937ey.pdf Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+1.89 EUR
100+1.27 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SI1403BDL-T1-BE3 SI1403BDL-T1-BE3 Vishay Siliconix si1403bdl.pdf Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.30 EUR
6000+0.28 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SI1403BDL-T1-BE3 SI1403BDL-T1-BE3 Vishay Siliconix si1403bdl.pdf Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SI1442DH-T1-BE3 SI1442DH-T1-BE3 Vishay Siliconix si1442dh.pdf Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI1442DH-T1-BE3 SI1442DH-T1-BE3 Vishay Siliconix si1442dh.pdf Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
38+0.47 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SQJA72EP-T1_GE3 SQJA72EP-T1_GE3 Vishay Siliconix sqja72ep.pdf Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJA72EP-T1_GE3 SQJA72EP-T1_GE3 Vishay Siliconix sqja72ep.pdf Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2811 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
10+1.98 EUR
100+1.54 EUR
500+1.31 EUR
1000+1.07 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SQJ150EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 66A PPAK SO-8
auf Bestellung 3048 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJ912DEP-T1_GE3 SQJ912DEP-T1_GE3 Vishay Siliconix sqj912dep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4336 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
11+1.64 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIR882BDP-T1-RE3 SIR882BDP-T1-RE3 Vishay Siliconix sir882bdp.pdf Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+2.17 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.14 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQJQ142E-T1_GE3 Vishay Siliconix sqjq142e.pdf Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 726 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.09 EUR
10+3.40 EUR
100+2.41 EUR
500+2.00 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SQ4401EY-T1_BE3 SQ4401EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.07 EUR
5000+1.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SQ4401EY-T1_BE3 SQ4401EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 14140 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.58 EUR
10+3.81 EUR
100+3.03 EUR
500+2.56 EUR
1000+2.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP6N80AE-GE3 SIHP6N80AE-GE3 Vishay Siliconix sihp6n80ae.pdf Description: MOSFET N-CH 800V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
50+1.60 EUR
100+1.50 EUR
500+1.20 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SIHP068N60EF-GE3 SIHP068N60EF-GE3 Vishay Siliconix sihp068n60ef.pdf Description: MOSFET N-CH 600V 41A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 919 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.98 EUR
50+3.97 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG068N60EF-GE3 SIHG068N60EF-GE3 Vishay Siliconix sihg068n60ef.pdf Description: MOSFET N-CH 600V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.82 EUR
10+7.01 EUR
100+5.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIDR668ADP-T1-RE3 SIDR668ADP-T1-RE3 Vishay Siliconix sidr668adp.pdf Description: MOSFET N-CH 100V 23.3A/104A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDR668ADP-T1-RE3 SIDR668ADP-T1-RE3 Vishay Siliconix sidr668adp.pdf Description: MOSFET N-CH 100V 23.3A/104A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
auf Bestellung 2522 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
10+2.95 EUR
100+2.34 EUR
500+1.90 EUR
1000+1.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIR688DP-T1-GE3 SIR688DP-T1-GE3 Vishay Siliconix sir688dp.pdf Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3105 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR688DP-T1-GE3 SIR688DP-T1-GE3 Vishay Siliconix sir688dp.pdf Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3105 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8416DB-T2-E1 SI8416DB-T2-E1 Vishay Siliconix si8416db.pdf Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.46 EUR
6000+0.42 EUR
9000+0.39 EUR
15000+0.38 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SI8416DB-T2-E1 SI8416DB-T2-E1 Vishay Siliconix si8416db.pdf Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 16372 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
17+1.06 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SIZ998BDT-T1-GE3 Vishay Siliconix doc?77875 Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.62 EUR
6000+0.59 EUR
9000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIZ998BDT-T1-GE3 Vishay Siliconix doc?77875 Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 17917 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.50 EUR
15+1.24 EUR
100+0.96 EUR
500+0.81 EUR
1000+0.66 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SiR624DP-T1-GE3 SiR624DP-T1-GE3 Vishay Siliconix sir624dp.pdf Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiR624DP-T1-GE3 SiR624DP-T1-GE3 Vishay Siliconix sir624dp.pdf Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SUD50P04-08-E3 Vishay Siliconix Description: MOSFET P-CH 40V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z10PBF-BE3 IRF9Z10PBF-BE3 Vishay Siliconix irf9z10.pdf Description: MOSFET P-CH 60V 6.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQP120N06-6M7_GE3 SQP120N06-6M7_GE3 Vishay Siliconix Description: MOSFET N-CH 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQV120N06-4m7L_GE3 SQV120N06-4m7L_GE3 Vishay Siliconix sqv120n06-4m7l.pdf Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL510PBF-BE3 IRL510PBF-BE3 Vishay Siliconix irl510.pdf Description: MOSFET N-CH 100V 5.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
50+0.80 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRL530PBF-BE3 IRL530PBF-BE3 Vishay Siliconix irl530.pdf Description: MOSFET N-CH 100V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
50+1.67 EUR
100+1.50 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SQ4917EY-T1_BE3 SQ4917EY-T1_BE3 Vishay Siliconix sq4917ey.pdf Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.07 EUR
5000+1.02 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SQ4917EY-T1_BE3 SQ4917EY-T1_BE3 Vishay Siliconix sq4917ey.pdf Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 22307 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.70 EUR
10+2.37 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SUM50020E-GE3 SUM50020E-GE3 Vishay Siliconix sum50020e.pdf Description: MOSFET N-CH 60V 120A TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SUM50020E-GE3 SUM50020E-GE3 Vishay Siliconix sum50020e.pdf Description: MOSFET N-CH 60V 120A TO263
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SUM50P10-42-E3 SUM50P10-42-E3 Vishay Siliconix SUM50P10-42.pdf Description: MOSFET N-CH 100V 36A TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHA186N60EF-GE3 SIHA186N60EF-GE3 Vishay Siliconix siha186n60ef.pdf Description: MOSFET N-CH 600V 8.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR110TRLPBF-BE3 IRFR110TRLPBF-BE3 Vishay Siliconix sihfr110.pdf Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR110TRLPBF-BE3 IRFR110TRLPBF-BE3 Vishay Siliconix sihfr110.pdf Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.57 EUR
14+1.34 EUR
100+0.91 EUR
500+0.81 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SUD08P06-155L-BE3 SUD08P06-155L-BE3 Vishay Siliconix sud08p06-155l-ge3.pdf Description: MOSFET P-CH 60V 8.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.69 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
SUD08P06-155L-BE3 SUD08P06-155L-BE3 Vishay Siliconix sud08p06-155l-ge3.pdf Description: MOSFET P-CH 60V 8.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2314 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.50 EUR
12+1.58 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIA477EDJ-T1-GE3 SIA477EDJ-T1-GE3 Vishay Siliconix SiA477EDJ_Dec24_2012.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI1411DH-T1-BE3 si1411dh.pdf
SI1411DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 420MA SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1N60APBF-BE3 sihfr1n6.pdf
IRFR1N60APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ200EP-T1_GE3 sqj200ep.pdf
SQJ200EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.90 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SQJ200EP-T1_GE3 sqj200ep.pdf
SQJ200EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.13 EUR
10+1.90 EUR
100+1.48 EUR
500+1.22 EUR
1000+0.97 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SQJ244EP-T1_GE3 sqj244ep.pdf
SQJ244EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ244EP-T1_GE3 sqj244ep.pdf
SQJ244EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHA 40V PPAK SO-8L
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJ204EP-T1_GE3 sqj204ep.pdf
SQJ204EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.83 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SQJ204EP-T1_GE3 sqj204ep.pdf
SQJ204EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.00 EUR
100+1.35 EUR
500+1.08 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SQJ208EP-T1_GE3 sqj208ep.pdf
SQJ208EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH AUTO 40V PP SO-
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ208EP-T1_GE3 sqj208ep.pdf
SQJ208EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH AUTO 40V PP SO-
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIHB068N60EF-GE3 sihb068n60ef.pdf
SIHB068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 3882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.45 EUR
50+6.14 EUR
100+5.49 EUR
500+4.77 EUR
1000+4.09 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SQ3585EV-T1_GE3 sq3585ev.pdf
SQ3585EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3585EV-T1_GE3 sq3585ev.pdf
SQ3585EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.57A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
10+4.08 EUR
25+3.74 EUR
100+3.37 EUR
250+3.19 EUR
500+3.08 EUR
1000+3.00 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SQ3457EV-T1_GE3 sq3457ev.pdf
SQ3457EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 14952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
19+0.93 EUR
100+0.64 EUR
500+0.54 EUR
1000+0.46 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SQJ486EP-T1_GE3 sqj486ep.pdf
SQJ486EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ486EP-T1_GE3 sqj486ep.pdf
SQJ486EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
12+1.53 EUR
100+1.19 EUR
500+1.01 EUR
1000+0.82 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SQ4937EY-T1_GE3 sq4937ey.pdf
SQ4937EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ4937EY-T1_GE3 sq4937ey.pdf
SQ4937EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.89 EUR
100+1.27 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SI1403BDL-T1-BE3 si1403bdl.pdf
SI1403BDL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.30 EUR
6000+0.28 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SI1403BDL-T1-BE3 si1403bdl.pdf
SI1403BDL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
SI1442DH-T1-BE3 si1442dh.pdf
SI1442DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI1442DH-T1-BE3 si1442dh.pdf
SI1442DH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 4.5V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 6 V
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
38+0.47 EUR
100+0.23 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
SQJA72EP-T1_GE3 sqja72ep.pdf
SQJA72EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJA72EP-T1_GE3 sqja72ep.pdf
SQJA72EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
10+1.98 EUR
100+1.54 EUR
500+1.31 EUR
1000+1.07 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SQJ150EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 66A PPAK SO-8
auf Bestellung 3048 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJ912DEP-T1_GE3 sqj912dep.pdf
SQJ912DEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIR882BDP-T1-RE3 sir882bdp.pdf
SIR882BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.5/67.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 67.5A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3762 pF @ 50 V
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+2.17 EUR
100+1.56 EUR
500+1.25 EUR
1000+1.14 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SQJQ142E-T1_GE3 sqjq142e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 726 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.09 EUR
10+3.40 EUR
100+2.41 EUR
500+2.00 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SQ4401EY-T1_BE3
SQ4401EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.07 EUR
5000+1.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SQ4401EY-T1_BE3
SQ4401EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 7.14W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 14140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+3.81 EUR
100+3.03 EUR
500+2.56 EUR
1000+2.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP6N80AE-GE3 sihp6n80ae.pdf
SIHP6N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
50+1.60 EUR
100+1.50 EUR
500+1.20 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SIHP068N60EF-GE3 sihp068n60ef.pdf
SIHP068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.98 EUR
50+3.97 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG068N60EF-GE3 sihg068n60ef.pdf
SIHG068N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 41A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2628 pF @ 100 V
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.82 EUR
10+7.01 EUR
100+5.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIDR668ADP-T1-RE3 sidr668adp.pdf
SIDR668ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.3A/104A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIDR668ADP-T1-RE3 sidr668adp.pdf
SIDR668ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.3A/104A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.3A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 50 V
auf Bestellung 2522 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+2.95 EUR
100+2.34 EUR
500+1.90 EUR
1000+1.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIR688DP-T1-GE3 sir688dp.pdf
SIR688DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3105 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR688DP-T1-GE3 sir688dp.pdf
SIR688DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3105 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI8416DB-T2-E1 si8416db.pdf
SI8416DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
6000+0.42 EUR
9000+0.39 EUR
15000+0.38 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SI8416DB-T2-E1 si8416db.pdf
SI8416DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 16A 6MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 4 V
auf Bestellung 16372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
17+1.06 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SIZ998BDT-T1-GE3 doc?77875
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.62 EUR
6000+0.59 EUR
9000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIZ998BDT-T1-GE3 doc?77875
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 17917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.50 EUR
15+1.24 EUR
100+0.96 EUR
500+0.81 EUR
1000+0.66 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SiR624DP-T1-GE3 sir624dp.pdf
SiR624DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiR624DP-T1-GE3 sir624dp.pdf
SiR624DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SUD50P04-08-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9Z10PBF-BE3 irf9z10.pdf
IRF9Z10PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 6.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQP120N06-6M7_GE3
SQP120N06-6M7_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQV120N06-4m7L_GE3 sqv120n06-4m7l.pdf
SQV120N06-4m7L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-262-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL510PBF-BE3 irl510.pdf
IRL510PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
50+0.80 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRL530PBF-BE3 irl530.pdf
IRL530PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
50+1.67 EUR
100+1.50 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SQ4917EY-T1_BE3 sq4917ey.pdf
SQ4917EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.07 EUR
5000+1.02 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
SQ4917EY-T1_BE3 sq4917ey.pdf
SQ4917EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 22307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.70 EUR
10+2.37 EUR
100+1.61 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SUM50020E-GE3 sum50020e.pdf
SUM50020E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SUM50020E-GE3 sum50020e.pdf
SUM50020E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SUM50P10-42-E3 SUM50P10-42.pdf
SUM50P10-42-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 36A TO263
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHA186N60EF-GE3 siha186n60ef.pdf
SIHA186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR110TRLPBF-BE3 sihfr110.pdf
IRFR110TRLPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR110TRLPBF-BE3 sihfr110.pdf
IRFR110TRLPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
14+1.34 EUR
100+0.91 EUR
500+0.81 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SUD08P06-155L-BE3 sud08p06-155l-ge3.pdf
SUD08P06-155L-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.69 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
SUD08P06-155L-BE3 sud08p06-155l-ge3.pdf
SUD08P06-155L-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 5A, 10V
Power Dissipation (Max): 1.7W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 2314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
12+1.58 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.75 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIA477EDJ-T1-GE3 SiA477EDJ_Dec24_2012.pdf
SIA477EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 90 108 126 140 141 142 143 144 145 146 147 148 149 150 162 180 185  [ Nächste Seite >> ]