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SIA938DJT-T1-GE3 SIA938DJT-T1-GE3 Vishay Siliconix sia938djt.pdf Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIA938DJT-T1-GE3 SIA938DJT-T1-GE3 Vishay Siliconix sia938djt.pdf Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SiR690DP-T1-GE3 SiR690DP-T1-GE3 Vishay Siliconix sir690dp.pdf Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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SiR690DP-T1-GE3 SiR690DP-T1-GE3 Vishay Siliconix sir690dp.pdf Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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DG9232EDY-T1-GE3 DG9232EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST DUAL 8SOIC
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DG9232EDY-T1-GE3 DG9232EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST DUAL 8SOIC
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SISF06DN-T1-GE3 SISF06DN-T1-GE3 Vishay Siliconix sisf06dn.pdf Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Tape & Reel (TR)
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SISF06DN-T1-GE3 SISF06DN-T1-GE3 Vishay Siliconix sisf06dn.pdf Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
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SIDR680ADP-T1-RE3 SIDR680ADP-T1-RE3 Vishay Siliconix sidr680adp.pdf Description: MOSFET N-CH 80V 30.7A/137A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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DG2723DN-T1-GE4 Vishay Siliconix dg2723.pdf Description: IC SWITCH DUAL SPDT 10-MINIQFN
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SQJ147ELP-T1_GE3 SQJ147ELP-T1_GE3 Vishay Siliconix sqj147elp.pdf Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SI7469ADP-T1-RE3 SI7469ADP-T1-RE3 Vishay Siliconix si7469adp.pdf Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
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SUM90N04-3M3P-E3 SUM90N04-3M3P-E3 Vishay Siliconix sum90n043m3p.pdf Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5286 pF @ 20 V
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SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 Vishay Siliconix sis932edn.pdf Description: MOSFET 2N-CH 30V 6A PPAK 1212
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta), 23W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
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SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 Vishay Siliconix sis932edn.pdf Description: MOSFET 2N-CH 30V 6A PPAK 1212
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta), 23W (Tc)
Technology: MOSFET (Metal Oxide)
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SQJA34EP-T1_GE3 SQJA34EP-T1_GE3 Vishay Siliconix sqja34ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
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SQJA34EP-T1_GE3 SQJA34EP-T1_GE3 Vishay Siliconix sqja34ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
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SI2319CDS-T1-BE3 SI2319CDS-T1-BE3 Vishay Siliconix si2319cd.pdf Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
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SI2319CDS-T1-BE3 SI2319CDS-T1-BE3 Vishay Siliconix si2319cd.pdf Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
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SIZ256DT-T1-GE3 SIZ256DT-T1-GE3 Vishay Siliconix siz256dt.pdf Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
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SIRA20BDP-T1-GE3 SIRA20BDP-T1-GE3 Vishay Siliconix sira20bdp.pdf Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SQJ136ELP-T1_GE3 SQJ136ELP-T1_GE3 Vishay Siliconix sqj136elp.pdf Description: MOSFET N-CH 40V 350A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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SIZ340BDT-T1-GE3 SIZ340BDT-T1-GE3 Vishay Siliconix siz340bdt.pdf Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
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SIZ340BDT-T1-GE3 SIZ340BDT-T1-GE3 Vishay Siliconix siz340bdt.pdf Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
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SI7252ADP-T1-GE3 SI7252ADP-T1-GE3 Vishay Siliconix si7252adp.pdf Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
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9000+1.38 EUR
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SI7252ADP-T1-GE3 SI7252ADP-T1-GE3 Vishay Siliconix si7252adp.pdf Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
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SQJB60EP-T2_GE3 Vishay Siliconix sqjb60ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
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SQJ910AEP-T2_GE3 Vishay Siliconix sqj910aep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
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SQR100N04-3M8R_GE3 Vishay Siliconix Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
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SQC40016E_DFFR Vishay Siliconix Description: N-CHANNEL 40-V (D-S) MOSFET
Produkt ist nicht verfügbar
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SIR106DP-T1-RE3 SIR106DP-T1-RE3 Vishay Siliconix sir106dp.pdf Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
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SIR106DP-T1-RE3 SIR106DP-T1-RE3 Vishay Siliconix sir106dp.pdf Description: MOSFET N-CH 100V 16.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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500+1.9 EUR
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SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Siliconix sir640adp.pdf Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
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SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Siliconix sir640adp.pdf Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
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10+3.09 EUR
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SUD15N15-95-BE3 SUD15N15-95-BE3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SUD15N15-95-BE3 SUD15N15-95-BE3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6310 Stücke:
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10+3.45 EUR
100+2.74 EUR
500+2.32 EUR
1000+1.96 EUR
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SUD35N10-26P-BE3 SUD35N10-26P-BE3 Vishay Siliconix sud35n10-26p.pdf Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Produkt ist nicht verfügbar
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SUD35N10-26P-BE3 SUD35N10-26P-BE3 Vishay Siliconix sud35n10-26p.pdf Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 1228 Stücke:
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4+5.57 EUR
10+3.62 EUR
50+2.76 EUR
100+2.49 EUR
500+2.01 EUR
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SI7322ADN-T1-GE3 SI7322ADN-T1-GE3 Vishay Siliconix si7322adn.pdf Description: MOSFET N-CH 100V 15.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
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SI7322ADN-T1-GE3 SI7322ADN-T1-GE3 Vishay Siliconix si7322adn.pdf Description: MOSFET N-CH 100V 15.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
auf Bestellung 1405 Stücke:
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18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
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SISA72DN-T1-GE3 SISA72DN-T1-GE3 Vishay Siliconix sisa72dn.pdf Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 20 V
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SISA72DN-T1-GE3 SISA72DN-T1-GE3 Vishay Siliconix sisa72dn.pdf Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 20 V
auf Bestellung 7173 Stücke:
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8+2.81 EUR
12+1.77 EUR
100+1.18 EUR
500+0.93 EUR
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SISS92DN-T1-GE3 SISS92DN-T1-GE3 Vishay Siliconix siss92dn.pdf Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
Produkt ist nicht verfügbar
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SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay Siliconix siha24n80ae.pdf Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 467 Stücke:
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3+7.81 EUR
50+4.02 EUR
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SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay Siliconix sihg24n80ae.pdf Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 333 Stücke:
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3+8.85 EUR
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100+4.19 EUR
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IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
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IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1869 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.28 EUR
10+2.5 EUR
100+1.92 EUR
500+1.52 EUR
1000+1.38 EUR
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SI1902DL-T1-BE3 SI1902DL-T1-BE3 Vishay Siliconix si1902dl.pdf Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
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SI1902DL-T1-BE3 SI1902DL-T1-BE3 Vishay Siliconix si1902dl.pdf Description: MOSFET 2N-CH 20V 0.66A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2864 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.51 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
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SIHFPS37N50A-GE3 SIHFPS37N50A-GE3 Vishay Siliconix sihfps37n50a.pdf Description: POWER MOSFET SUPER-247, 130 M @
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
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SI1023CX-T1-GE3 SI1023CX-T1-GE3 Vishay Siliconix si1023cx.pdf Description: MOSFET 2P-CH 20V SC89
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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SI1023CX-T1-GE3 SI1023CX-T1-GE3 Vishay Siliconix si1023cx.pdf Description: MOSFET 2P-CH 20V SC89
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
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SIHP21N60EF-BE3 SIHP21N60EF-BE3 Vishay Siliconix sihp21n60ef.pdf Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
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SIZF906BDT-T1-GE3 SIZF906BDT-T1-GE3 Vishay Siliconix sizf906bdt.pdf Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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SIZF906BDT-T1-GE3 SIZF906BDT-T1-GE3 Vishay Siliconix sizf906bdt.pdf Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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SIC651ACD-T1-GE3 SIC651ACD-T1-GE3 Vishay Siliconix sic651.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
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SIC651ACD-T1-GE3 SIC651ACD-T1-GE3 Vishay Siliconix sic651.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
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SQJ476EP-T1_GE3 SQJ476EP-T1_GE3 Vishay Siliconix sqj476ep.pdf Description: MOSFET N-CH 100V 23A PPAK SO-8
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
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SIS126DN-T1-GE3 SIS126DN-T1-GE3 Vishay Siliconix sis126dn.pdf Description: MOSFET N-CH 80V 12A/45.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
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SIS126DN-T1-GE3 SIS126DN-T1-GE3 Vishay Siliconix sis126dn.pdf Description: MOSFET N-CH 80V 12A/45.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
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SIA938DJT-T1-GE3 sia938djt.pdf
SIA938DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SIA938DJT-T1-GE3 sia938djt.pdf
SIA938DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A PPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
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SiR690DP-T1-GE3 sir690dp.pdf
SiR690DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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SiR690DP-T1-GE3 sir690dp.pdf
SiR690DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
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DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
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DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
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SISF06DN-T1-GE3 sisf06dn.pdf
SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Tape & Reel (TR)
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SISF06DN-T1-GE3 sisf06dn.pdf
SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28A PWRPAK1212
Supplier Device Package: PowerPAK® 1212-8SCD
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 101A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 5.2W (Ta), 69.4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SCD
Packaging: Cut Tape (CT)
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SIDR680ADP-T1-RE3 sidr680adp.pdf
SIDR680ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/137A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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DG2723DN-T1-GE4 dg2723.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10-MINIQFN
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SQJ147ELP-T1_GE3 sqj147elp.pdf
SQJ147ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SI7469ADP-T1-RE3 si7469adp.pdf
SI7469ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
auf Bestellung 467 Stücke:
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5+5.09 EUR
10+3.28 EUR
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SUM90N04-3M3P-E3 sum90n043m3p.pdf
SUM90N04-3M3P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5286 pF @ 20 V
Produkt ist nicht verfügbar
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SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta), 23W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
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3000+0.43 EUR
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SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta), 23W (Tc)
Technology: MOSFET (Metal Oxide)
auf Bestellung 4919 Stücke:
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12+1.76 EUR
20+1.09 EUR
50+0.81 EUR
100+0.71 EUR
500+0.55 EUR
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SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Produkt ist nicht verfügbar
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SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
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SI2319CDS-T1-BE3 si2319cd.pdf
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
Produkt ist nicht verfügbar
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SI2319CDS-T1-BE3 si2319cd.pdf
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
Produkt ist nicht verfügbar
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SIZ256DT-T1-GE3 siz256dt.pdf
SIZ256DT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Produkt ist nicht verfügbar
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SIRA20BDP-T1-GE3 sira20bdp.pdf
SIRA20BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 10920 Stücke:
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7+3.31 EUR
10+2.71 EUR
100+2.11 EUR
500+1.78 EUR
1000+1.45 EUR
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SQJ136ELP-T1_GE3 sqj136elp.pdf
SQJ136ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 350A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8015 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 36624 Stücke:
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5+4.9 EUR
10+3.14 EUR
50+2.39 EUR
100+2.14 EUR
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SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 45000 Stücke:
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AnzahlPrivatkunde
3000+0.61 EUR
9000+0.54 EUR
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SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 45699 Stücke:
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9+2.39 EUR
15+1.5 EUR
50+1.11 EUR
100+0.99 EUR
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SI7252ADP-T1-GE3 si7252adp.pdf
SI7252ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 9000 Stücke:
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3000+1.49 EUR
9000+1.38 EUR
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SI7252ADP-T1-GE3 si7252adp.pdf
SI7252ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 9055 Stücke:
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AnzahlPrivatkunde
5+5.09 EUR
10+3.28 EUR
50+2.5 EUR
100+2.25 EUR
500+1.81 EUR
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SQJB60EP-T2_GE3 sqjb60ep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQJ910AEP-T2_GE3 sqj910aep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
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SQR100N04-3M8R_GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQC40016E_DFFR
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Produkt ist nicht verfügbar
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SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6000 Stücke:
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3000+1.54 EUR
6000+1.48 EUR
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SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 6804 Stücke:
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AnzahlPrivatkunde
7+3.39 EUR
10+2.83 EUR
100+2.25 EUR
500+1.9 EUR
1000+1.62 EUR
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SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.4 EUR
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SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
auf Bestellung 13251 Stücke:
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5+4.82 EUR
10+3.09 EUR
100+2.13 EUR
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SUD15N15-95-BE3 sud15n15.pdf
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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AnzahlPrivatkunde
2000+1.87 EUR
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SUD15N15-95-BE3 sud15n15.pdf
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 6310 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.14 EUR
10+3.45 EUR
100+2.74 EUR
500+2.32 EUR
1000+1.96 EUR
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SUD35N10-26P-BE3 sud35n10-26p.pdf
SUD35N10-26P-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Produkt ist nicht verfügbar
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SUD35N10-26P-BE3 sud35n10-26p.pdf
SUD35N10-26P-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 1228 Stücke:
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4+5.57 EUR
10+3.62 EUR
50+2.76 EUR
100+2.49 EUR
500+2.01 EUR
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SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
Produkt ist nicht verfügbar
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SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 26W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
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11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
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SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 20 V
auf Bestellung 6000 Stücke:
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3000+0.74 EUR
6000+0.68 EUR
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SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 20 V
auf Bestellung 7173 Stücke:
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8+2.81 EUR
12+1.77 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.84 EUR
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SISS92DN-T1-GE3 siss92dn.pdf
SISS92DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
Produkt ist nicht verfügbar
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SIHA24N80AE-GE3 siha24n80ae.pdf
SIHA24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 467 Stücke:
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3+7.81 EUR
50+4.02 EUR
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SIHG24N80AE-GE3 sihg24n80ae.pdf
SIHG24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 333 Stücke:
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3+8.85 EUR
25+5.08 EUR
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IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Produkt ist nicht verfügbar
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IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1869 Stücke:
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AnzahlPrivatkunde
7+3.28 EUR
10+2.5 EUR
100+1.92 EUR
500+1.52 EUR
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SI1902DL-T1-BE3 si1902dl.pdf
SI1902DL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1902DL-T1-BE3 si1902dl.pdf
SI1902DL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 2864 Stücke:
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14+1.51 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
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SIHFPS37N50A-GE3 sihfps37n50a.pdf
SIHFPS37N50A-GE3
Hersteller: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 130 M @
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
auf Bestellung 4090 Stücke:
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AnzahlPrivatkunde
2+15.14 EUR
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60+8.02 EUR
120+7.38 EUR
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SI1023CX-T1-GE3 si1023cx.pdf
SI1023CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 33000 Stücke:
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AnzahlPrivatkunde
3000+0.25 EUR
9000+0.21 EUR
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SI1023CX-T1-GE3 si1023cx.pdf
SI1023CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 220mW
Technology: MOSFET (Metal Oxide)
auf Bestellung 33926 Stücke:
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SIHP21N60EF-BE3 sihp21n60ef.pdf
SIHP21N60EF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Produkt ist nicht verfügbar
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SIZF906BDT-T1-GE3 sizf906bdt.pdf
SIZF906BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIZF906BDT-T1-GE3 sizf906bdt.pdf
SIZF906BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 36A 8POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 0.68mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SIC651ACD-T1-GE3 sic651.pdf
SIC651ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
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SIC651ACD-T1-GE3 sic651.pdf
SIC651ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
auf Bestellung 2678 Stücke:
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AnzahlPrivatkunde
5+4.61 EUR
10+3.43 EUR
25+3.13 EUR
100+2.8 EUR
250+2.64 EUR
500+2.58 EUR
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SQJ476EP-T1_GE3 sqj476ep.pdf
SQJ476EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23A PPAK SO-8
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 1600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIS126DN-T1-GE3 sis126dn.pdf
SIS126DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.82 EUR
9000+0.74 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIS126DN-T1-GE3 sis126dn.pdf
SIS126DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
auf Bestellung 12375 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.09 EUR
11+1.96 EUR
50+1.46 EUR
100+1.31 EUR
500+1.02 EUR
Mindestbestellmenge: 7 Stücke
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