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DG456EQ-T1-E3 DG456EQ-T1-E3 Vishay Siliconix dg454.pdf Description: IC SW SPST-NO/NC 5.3OHM 16TSSOP
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
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DG456EY-T1-E3 DG456EY-T1-E3 Vishay Siliconix dg454.pdf Description: IC SW SPST-NO/NCX4 5.3OHM 16SOIC
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 16-SOIC
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DG467DV-T1-E3 DG467DV-T1-E3 Vishay Siliconix dg467.pdf Description: IC SWITCH SPST-NC X 1 9OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 7V ~ 36V
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Charge Injection: 21pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG468DV-T1-E3 DG468DV-T1-E3 Vishay Siliconix dg467.pdf Description: IC SWITCH SPST-NO X 1 9OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 7V ~ 36V
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Charge Injection: 21pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG469EQ-T1-E3 DG469EQ-T1-E3 Vishay Siliconix dg469.pdf Description: IC SWITCH SPDT X 1 6OHM 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-MSOP
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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DG469EY-T1-E3 DG469EY-T1-E3 Vishay Siliconix dg469.pdf Description: IC SWITCH SPDT X 1 6OHM 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DG470EQ-T1-E3 DG470EQ-T1-E3 Vishay Siliconix dg469.pdf Description: IC SWITCH SPDT X 1 6OHM 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-MSOP
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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DG470EY-T1-E3 DG470EY-T1-E3 Vishay Siliconix dg469.pdf Description: IC SWITCH SPDT X 1 6OHM 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DG604EN-T1-E4 DG604EN-T1-E4 Vishay Siliconix dg604.pdf Description: IC MULTIPLEXER DUAL1X1 16MINIQFN
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DG604EQ-T1-E3 DG604EQ-T1-E3 Vishay Siliconix dg604.pdf Description: IC MULTIPLEXER DUAL 1X1 14TSSOP
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DG611AEN-T1-E4 DG611AEN-T1-E4 Vishay Siliconix DG611A-13A.pdf Description: IC SW SPST-NCX4 115OHM 16MINIQFN
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 2pF, 3pF
Switch Time (Ton, Toff) (Max): 55ns, 35ns
Channel-to-Channel Matching (ΔRon): 700mOhm
Multiplexer/Demultiplexer Circuit: 1:1
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DG612AEN-T1-E4 DG612AEN-T1-E4 Vishay Siliconix DG611A-13A.pdf Description: IC SWITCH QUAD SPST 16MINIQFN
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DG612AEQ-T1-E3 DG612AEQ-T1-E3 Vishay Siliconix DG611A-13A.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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DG612AEY-T1-E3 DG612AEY-T1-E3 Vishay Siliconix DG611A-13A.pdf Description: IC SWITCH QUAD SPST 16SOIC
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DG636EQ-T1-E3 DG636EQ-T1-E3 Vishay Siliconix dg636.pdf Description: IC SWITCH SPDTX2 115OHM 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 610MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 0.1pC
Crosstalk: -88dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 60ns, 52ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Obsolete
Number of Circuits: 2
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DG9051DQ-T1-E3 DG9051DQ-T1-E3 Vishay Siliconix Description: IC MUX 8:1 40OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 40Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 6V
Charge Injection: 38pC
Crosstalk: -83dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Max)
Switch Time (Ton, Toff) (Max): 35ns, 30ns
Channel Capacitance (CS(off), CD(off)): 4pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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DG9424DQ-T1-E3 DG9424DQ-T1-E3 Vishay Siliconix dg9424.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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DG9425DQ-T1-E3 DG9425DQ-T1-E3 Vishay Siliconix dg9424.pdf Description: IC SWITCH SPST-NCX4 3OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
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DG9426DQ-T1-E3 DG9426DQ-T1-E3 Vishay Siliconix dg9424.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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SI9122ADQ-T1-E3 SI9122ADQ-T1-E3 Vishay Siliconix si9122a.pdf Description: IC REG CTRLR HALF-BRIDGE 20TSSOP
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SIP21108DT-T1-E3 SIP21108DT-T1-E3 Vishay Siliconix sip21106.pdf Description: IC REG LIN POS ADJ 150MA TSOT23
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DG2042DQ-T1-E3 DG2042DQ-T1-E3 Vishay Siliconix 72091.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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DG604EN-T1-E4 DG604EN-T1-E4 Vishay Siliconix dg604.pdf Description: IC MULTIPLEXER DUAL1X1 16MINIQFN
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DG604EQ-T1-E3 DG604EQ-T1-E3 Vishay Siliconix dg604.pdf Description: IC MULTIPLEXER DUAL 1X1 14TSSOP
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DG9424DQ-T1-E3 DG9424DQ-T1-E3 Vishay Siliconix dg9424.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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DG9426DQ-T1-E3 DG9426DQ-T1-E3 Vishay Siliconix dg9424.pdf Description: IC SWITCH QUAD SPST 16TSSOP
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SI1012X-T1-GE3 SI1012X-T1-GE3 Vishay Siliconix si1012rx.pdf Description: MOSFET N-CH 20V 500MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
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SI1040X-T1-GE3 SI1040X-T1-GE3 Vishay Siliconix si1040x.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC89-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 430mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
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SI1067X-T1-GE3 SI1067X-T1-GE3 Vishay Siliconix si1067x.pdf Description: MOSFET P-CH 20V 1.06A SC89-6
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SI4398DY-T1-GE3 SI4398DY-T1-GE3 Vishay Siliconix si4398dy.pdf Description: MOSFET N-CH 20V 19A 8-SOIC
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SI4642DY-T1-GE3 SI4642DY-T1-GE3 Vishay Siliconix si4642dy.pdf Description: MOSFET N-CH 30V 34A 8-SOIC
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SI6544BDQ-T1-GE3 SI6544BDQ-T1-GE3 Vishay Siliconix 72244.pdf Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
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SI6968BEDQ-T1-GE3 SI6968BEDQ-T1-GE3 Vishay Siliconix si6968be.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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SI7309DN-T1-GE3 SI7309DN-T1-GE3 Vishay Siliconix si7309dn.pdf Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
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SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Siliconix si7431dp.pdf Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
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SI7686DP-T1-GE3 SI7686DP-T1-GE3 Vishay Siliconix si7686dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
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SI7904BDN-T1-GE3 SI7904BDN-T1-GE3 Vishay Siliconix si7904bdn.pdf Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
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SI7913DN-T1-GE3 SI7913DN-T1-GE3 Vishay Siliconix 72615.pdf Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
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SIA443DJ-T1-GE3 SIA443DJ-T1-GE3 Vishay Siliconix sia443dj.pdf Description: MOSFET P-CH 20V 9A SC70-6
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SIA450DJ-T1-GE3 SIA450DJ-T1-GE3 Vishay Siliconix sia450dj.pdf Description: MOSFET N-CH 240V 1.52A SC70-6
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SIA810DJ-T1-GE3 SIA810DJ-T1-GE3 Vishay Siliconix sia810dj.pdf Description: MOSFET N-CH 20V 4.5A SC70-6
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SIA811DJ-T1-GE3 SIA811DJ-T1-GE3 Vishay Siliconix sia811dj.pdf Description: MOSFET P-CH 20V 4.5A SC70-6
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SIB412DK-T1-GE3 SIB412DK-T1-GE3 Vishay Siliconix sib412dk.pdf Description: MOSFET N-CH 20V 9A SC75-6
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SI7135DP-T1-GE3 SI7135DP-T1-GE3 Vishay Siliconix si7135dp.pdf Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8650 pF @ 15 V
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SI1046R-T1-GE3 SI1046R-T1-GE3 Vishay Siliconix si1046r.pdf Description: MOSFET N-CH 20V 0.606A SC75-3
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SI1046X-T1-GE3 SI1046X-T1-GE3 Vishay Siliconix si1046x.pdf Description: MOSFET N-CH 20V 0.606A SC89-3
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SI1051X-T1-GE3 SI1051X-T1-GE3 Vishay Siliconix si1051x.pdf Description: MOSFET P-CH 8V 1.2A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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SI1054X-T1-GE3 SI1054X-T1-GE3 Vishay Siliconix si1054x.pdf Description: MOSFET N-CH 12V 1.32A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 8.57 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.32A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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SI1069X-T1-GE3 SI1069X-T1-GE3 Vishay Siliconix si1069x.pdf Description: MOSFET P-CH 20V 0.94A SC89-6
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SI1073X-T1-GE3 SI1073X-T1-GE3 Vishay Siliconix si1073x.pdf Description: MOSFET P-CH 30V 0.98A SC89-6
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 173mOhm @ 980mA, 10V
Current - Continuous Drain (Id) @ 25°C: 980mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar
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SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 Vishay Siliconix si2301cd.pdf Description: MOSFET P-CH 20V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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SI2302CDS-T1-GE3 SI2302CDS-T1-GE3 Vishay Siliconix si2302cds.pdf Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
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SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 Vishay Siliconix si2303cd.pdf Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
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SI2305ADS-T1-GE3 SI2305ADS-T1-GE3 Vishay Siliconix Si2305ADS.pdf Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
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SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 Vishay Siliconix si2307cds.pdf Description: MOSFET P-CH 30V 3.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
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SI2308BDS-T1-GE3 SI2308BDS-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 60V 2.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SI2316BDS-T1-GE3 SI2316BDS-T1-GE3 Vishay Siliconix si2316bd.pdf Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SI2333CDS-T1-E3 SI2333CDS-T1-E3 Vishay Siliconix si2333cd.pdf Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
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SI5403DC-T1-GE3 SI5403DC-T1-GE3 Vishay Siliconix si5403dc.pdf Description: MOSFET P-CH 30V 6A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI5406CDC-T1-GE3 SI5406CDC-T1-GE3 Vishay Siliconix si5406cd.pdf Description: MOSFET N-CH 12V 6A 1206-8
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DG456EQ-T1-E3 dg454.pdf
DG456EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NC 5.3OHM 16TSSOP
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
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DG456EY-T1-E3 dg454.pdf
DG456EY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 5.3OHM 16SOIC
On-State Resistance (Max): 5.3Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 16-SOIC
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DG467DV-T1-E3 dg467.pdf
DG467DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NC X 1 9OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 7V ~ 36V
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Charge Injection: 21pC
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG468DV-T1-E3 dg467.pdf
DG468DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NO X 1 9OHM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 9Ohm
Supplier Device Package: 6-TSOP
Voltage - Supply, Single (V+): 7V ~ 36V
Voltage - Supply, Dual (V±): ±4.5V ~ 20V
Charge Injection: 21pC
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 140ns, 80ns
Channel Capacitance (CS(off), CD(off)): 30pF, 15pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG469EQ-T1-E3 dg469.pdf
DG469EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 6OHM 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-MSOP
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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DG469EY-T1-E3 dg469.pdf
DG469EY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 6OHM 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DG470EQ-T1-E3 dg469.pdf
DG470EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 6OHM 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-MSOP
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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DG470EY-T1-E3 dg469.pdf
DG470EY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 6OHM 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Channel-to-Channel Matching (ΔRon): 120mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -63dB @ 1MHz
Charge Injection: 58pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V ~ 36V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 6Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DG604EN-T1-E4 dg604.pdf
DG604EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL1X1 16MINIQFN
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DG604EQ-T1-E3 dg604.pdf
DG604EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 1X1 14TSSOP
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DG611AEN-T1-E4 DG611A-13A.pdf
DG611AEN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 115OHM 16MINIQFN
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 2pF, 3pF
Switch Time (Ton, Toff) (Max): 55ns, 35ns
Channel-to-Channel Matching (ΔRon): 700mOhm
Multiplexer/Demultiplexer Circuit: 1:1
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DG612AEN-T1-E4 DG611A-13A.pdf
DG612AEN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16MINIQFN
Produkt ist nicht verfügbar
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DG612AEQ-T1-E3 DG611A-13A.pdf
DG612AEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
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DG612AEY-T1-E3 DG611A-13A.pdf
DG612AEY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Produkt ist nicht verfügbar
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DG636EQ-T1-E3 dg636.pdf
DG636EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDTX2 115OHM 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 610MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 0.1pC
Crosstalk: -88dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 60ns, 52ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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DG9051DQ-T1-E3
DG9051DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 40OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 40Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 6V
Charge Injection: 38pC
Crosstalk: -83dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 5Ohm (Max)
Switch Time (Ton, Toff) (Max): 35ns, 30ns
Channel Capacitance (CS(off), CD(off)): 4pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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DG9424DQ-T1-E3 dg9424.pdf
DG9424DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
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DG9425DQ-T1-E3 dg9424.pdf
DG9425DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 3OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG9426DQ-T1-E3 dg9424.pdf
DG9426DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
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SI9122ADQ-T1-E3 si9122a.pdf
SI9122ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG CTRLR HALF-BRIDGE 20TSSOP
Produkt ist nicht verfügbar
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SIP21108DT-T1-E3 sip21106.pdf
SIP21108DT-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG LIN POS ADJ 150MA TSOT23
Produkt ist nicht verfügbar
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DG2042DQ-T1-E3 72091.pdf
DG2042DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
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DG604EN-T1-E4 dg604.pdf
DG604EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL1X1 16MINIQFN
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DG604EQ-T1-E3 dg604.pdf
DG604EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 1X1 14TSSOP
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DG9424DQ-T1-E3 dg9424.pdf
DG9424DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
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DG9426DQ-T1-E3 dg9424.pdf
DG9426DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
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SI1012X-T1-GE3 si1012rx.pdf
SI1012X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
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3000+0.31 EUR
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SI1040X-T1-GE3 si1040x.pdf
SI1040X-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC89-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 500mOhm
Voltage - Load: 1.8V ~ 8V
Current - Output (Max): 430mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
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3000+0.6 EUR
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SI1067X-T1-GE3 si1067x.pdf
SI1067X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.06A SC89-6
Produkt ist nicht verfügbar
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SI4398DY-T1-GE3 si4398dy.pdf
SI4398DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Produkt ist nicht verfügbar
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SI4642DY-T1-GE3 si4642dy.pdf
SI4642DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 34A 8-SOIC
Produkt ist nicht verfügbar
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SI6544BDQ-T1-GE3 72244.pdf
SI6544BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Produkt ist nicht verfügbar
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SI6968BEDQ-T1-GE3 si6968be.pdf
SI6968BEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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3000+0.75 EUR
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SI7309DN-T1-GE3 si7309dn.pdf
SI7309DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 12000 Stücke:
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3000+0.8 EUR
6000+0.74 EUR
9000+0.71 EUR
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SI7431DP-T1-GE3 si7431dp.pdf
SI7431DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Produkt ist nicht verfügbar
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SI7686DP-T1-GE3 si7686dp.pdf
SI7686DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Produkt ist nicht verfügbar
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SI7904BDN-T1-GE3 si7904bdn.pdf
SI7904BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.01 EUR
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SI7913DN-T1-GE3 72615.pdf
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
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SIA443DJ-T1-GE3 sia443dj.pdf
SIA443DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC70-6
Produkt ist nicht verfügbar
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SIA450DJ-T1-GE3 sia450dj.pdf
SIA450DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 1.52A SC70-6
Produkt ist nicht verfügbar
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SIA810DJ-T1-GE3 sia810dj.pdf
SIA810DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
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SIA811DJ-T1-GE3 sia811dj.pdf
SIA811DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
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SIB412DK-T1-GE3 sib412dk.pdf
SIB412DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A SC75-6
Produkt ist nicht verfügbar
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SI7135DP-T1-GE3 si7135dp.pdf
SI7135DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8650 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.62 EUR
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SI1046R-T1-GE3 si1046r.pdf
SI1046R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.606A SC75-3
Produkt ist nicht verfügbar
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SI1046X-T1-GE3 si1046x.pdf
SI1046X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.606A SC89-3
Produkt ist nicht verfügbar
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SI1051X-T1-GE3 si1051x.pdf
SI1051X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.2A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 122mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1054X-T1-GE3 si1054x.pdf
SI1054X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 1.32A SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 8.57 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.32A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.32A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI1069X-T1-GE3 si1069x.pdf
SI1069X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.94A SC89-6
Produkt ist nicht verfügbar
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SI1073X-T1-GE3 si1073x.pdf
SI1073X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.98A SC89-6
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 173mOhm @ 980mA, 10V
Current - Continuous Drain (Id) @ 25°C: 980mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.45 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar
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SI2301CDS-T1-GE3 si2301cd.pdf
SI2301CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.31 EUR
6000+0.27 EUR
9000+0.26 EUR
15000+0.25 EUR
21000+0.24 EUR
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SI2302CDS-T1-GE3 si2302cds.pdf
SI2302CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
auf Bestellung 106495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.29 EUR
21000+0.27 EUR
30000+0.26 EUR
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SI2303CDS-T1-GE3 si2303cd.pdf
SI2303CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
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SI2305ADS-T1-GE3 Si2305ADS.pdf
SI2305ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Produkt ist nicht verfügbar
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SI2307CDS-T1-GE3 si2307cds.pdf
SI2307CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 95325 Stücke:
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AnzahlPrivatkunde
3000+0.35 EUR
6000+0.31 EUR
9000+0.3 EUR
15000+0.29 EUR
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30000+0.26 EUR
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SI2308BDS-T1-GE3
SI2308BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI2316BDS-T1-GE3 si2316bd.pdf
SI2316BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.42 EUR
6000+0.39 EUR
9000+0.36 EUR
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SI2333CDS-T1-E3 si2333cd.pdf
SI2333CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
6000+0.5 EUR
9000+0.48 EUR
15000+0.45 EUR
21000+0.44 EUR
30000+0.43 EUR
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SI5403DC-T1-GE3 si5403dc.pdf
SI5403DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI5406CDC-T1-GE3 si5406cd.pdf
SI5406CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6A 1206-8
Produkt ist nicht verfügbar
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