Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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DG2731DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 104pF Switch Time (Ton, Toff) (Max): 110ns, 30ns Channel-to-Channel Matching (ΔRon): 30mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -75dB @ 100kHz Charge Injection: 9pC Voltage - Supply, Single (V+): 1.65V ~ 4.3V Supplier Device Package: 10-MSOP On-State Resistance (Max): 450mOhm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2732DN-T1-E4 |
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Vishay Siliconix |
Description: IC SWITCH 2XSPDT 400 MOHM 10DFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 2 On-State Resistance (Max): 450mOhm Channel-to-Channel Matching (ΔRon): 30mOhm Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Time (Ton, Toff) (Max): 110ns, 30ns Charge Injection: 9pC Channel Capacitance (CS(off), CD(off)): 104pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -75dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2732DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP Charge Injection: 9pC Switch Time (Ton, Toff) (Max): 110ns, 30ns Voltage - Supply, Single (V+): 1.65V ~ 4.3V Channel-to-Channel Matching (ΔRon): 30mOhm On-State Resistance (Max): 450mOhm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 2:1 Supplier Device Package: 10-MSOP Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -75dB @ 100kHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 104pF Switch Circuit: SPDT |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2733DN-T1-E4 |
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Vishay Siliconix |
Description: IC SWITCH 2XSPDT 400 MOHM 10DFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 2 On-State Resistance (Max): 450mOhm Channel-to-Channel Matching (ΔRon): 30mOhm Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Time (Ton, Toff) (Max): 110ns, 30ns Charge Injection: 9pC Channel Capacitance (CS(off), CD(off)): 104pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -75dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2733DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Part Status: Obsolete Packaging: Tape & Reel (TR) Base Part Number: DG2733 Supplier Device Package: 10-MSOP Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -75dB @ 100kHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 104pF Charge Injection: 9pC Switch Time (Ton, Toff) (Max): 110ns, 30ns Voltage - Supply, Single (V+): 1.65V ~ 4.3V Channel-to-Channel Matching (ΔRon): 30mOhm On-State Resistance (Max): 450mOhm Number of Circuits: 2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2753DN-T1-E4 |
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Vishay Siliconix |
Description: IC SWITCH TRIPLE SPDT 16QFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 1.2Ohm Channel-to-Channel Matching (ΔRon): 600 mOhm (Max) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Time (Ton, Toff) (Max): 60ns, 30ns Charge Injection: -25pC Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 2nA Crosstalk: -90dB @ 10MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2753DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH TRIPLE SPDT 16TSSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 3 On-State Resistance (Max): 1.2Ohm Channel-to-Channel Matching (ΔRon): 600 mOhm (Max) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Switch Time (Ton, Toff) (Max): 60ns, 30ns Charge Injection: -25pC Channel Capacitance (CS(off), CD(off)): 35pF Current - Leakage (IS(off)) (Max): 2nA Crosstalk: -90dB @ 10MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG411LDQ-T1 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST LV 16-TSSOP Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Supplier Device Package: 16-TSSOP -3db Bandwidth: 280MHz On-State Resistance (Max): 17Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Switch Time (Ton, Toff) (Max): 19ns, 12ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -95dB @ 1MHz Charge Injection: 5pC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG9232DY-T1 |
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Vishay Siliconix |
Description: IC SWITCH DUAL SPST 8SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 30Ohm Channel-to-Channel Matching (ΔRon): 400mOhm Voltage - Supply, Single (V+): 2.7V ~ 12V Switch Time (Ton, Toff) (Max): 75ns, 50ns Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 7pF, 13pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: -90dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG9233DY-T1 |
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Vishay Siliconix |
Description: IC SWITCH DUAL SPST 8SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 30Ohm Channel-to-Channel Matching (ΔRon): 400mOhm Voltage - Supply, Single (V+): 2.7V ~ 12V Switch Time (Ton, Toff) (Max): 75ns, 50ns Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 7pF, 13pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: -90dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Base Part Number: DG9233 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG9431DY-T1 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SPDT LV 8SOIC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 On-State Resistance (Max): 30Ohm Channel-to-Channel Matching (ΔRon): 400mOhm Voltage - Supply, Single (V+): 2.7V ~ 5V Switch Time (Ton, Toff) (Max): 75ns, 50ns Charge Injection: 2pC Channel Capacitance (CS(off), CD(off)): 7pF Current - Leakage (IS(off)) (Max): 100pA Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
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DG413LDQ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST LV 16-TSSOP Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -95dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Switch Time (Ton, Toff) (Max): 19ns, 12ns Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V On-State Resistance (Max): 17Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Charge Injection: 5pC -3db Bandwidth: 280MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG412LDQ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 17Ohm Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Switch Time (Ton, Toff) (Max): 19ns, 12ns -3db Bandwidth: 280MHz Charge Injection: 5pC Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -95dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2031DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH DUAL CMOS 10MSOP Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 117pF Switch Time (Ton, Toff) (Max): 58ns, 49ns Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -71dB @ 1MHz Charge Injection: 4pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 10-MSOP On-State Resistance (Max): 750mOhm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG2035DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH DUAL SPDT 10MSOP Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Number of Circuits: 2 On-State Resistance (Max): 1Ohm Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Switch Time (Ton, Toff) (Max): 58ns, 49ns Charge Injection: 4pC Channel Capacitance (CS(off), CD(off)): 117pF Current - Leakage (IS(off)) (Max): 2nA Crosstalk: -71dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Supplier Device Package: 10-MSOP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG308ADY-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Charge Injection: -10pC Voltage - Supply, Dual (V±): ±15V Supplier Device Package: 16-SOIC On-State Resistance (Max): 100Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 11pF, 8pF Switch Time (Ton, Toff) (Max): 200ns, 150ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG309DY-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST/CMOS 16SOIC Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 5pF, 5pF Switch Time (Ton, Toff) (Max): 200ns, 150ns Channel-to-Channel Matching (ΔRon): 1.7Ohm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -95dB @ 100kHz Charge Injection: 1pC Voltage - Supply, Dual (V±): ±4V ~ 22V Voltage - Supply, Single (V+): 4V ~ 44V Supplier Device Package: 16-SOIC On-State Resistance (Max): 85Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7414 Stücke - Preis und Lieferfrist anzeigen
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DG417DY-T1 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SPST 8SOIC Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Switch Time (Ton, Toff) (Max): 175ns, 145ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Charge Injection: 60pC Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V Supplier Device Package: 8-SOIC On-State Resistance (Max): 35Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
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SI9200EY-E3 |
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Vishay Siliconix |
Description: IC TRANSCEIVER 1/1 8SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Protocol: CANbus Number of Drivers/Receivers: 1/1 Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: -40°C ~ 125°C Type: Transceiver Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIP21108DT-T1-E3 |
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Vishay Siliconix |
Description: IC REG LIN POS ADJ 150MA TSOT23 Output Type: Adjustable Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) Protection Features: Over Temperature, Short Circuit Voltage Dropout (Max): 0.22V @ 150mA PSRR: 72dB ~ 38dB (1kHz ~ 100kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): 5.78V Supplier Device Package: TSOT-23-5 Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 85 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2325 Stücke - Preis und Lieferfrist anzeigen
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SIP21106DR-18-E3 |
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Vishay Siliconix |
Description: IC REG LINEAR 1.8V 150MA SC70-5 Protection Features: Over Temperature, Short Circuit PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: SC-70-5 Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 85 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
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SIP21106DR-33-E3 |
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Vishay Siliconix |
Description: IC REG LINEAR 3.3V 150MA SC70-5 Current - Output: 150mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 5-TSSOP, SC-70-5, SOT-353 PSRR: 75dB ~ 40dB (1kHz ~ 100kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 3.3V Supplier Device Package: SC-70-5 Number of Regulators: 1 Voltage - Input (Max): 6V Current - Quiescent (Iq): 85 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Protection Features: Over Temperature, Short Circuit Voltage Dropout (Max): 0.22V @ 150mA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
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IRFS9N60ATRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 9.2A D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 734 Stücke - Preis und Lieferfrist anzeigen
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IRF720LPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 3.3A TO262-3 Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-262-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Packaging: Tube Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFZ40PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRL540SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 28A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Active Supplier Device Package: D²PAK (TO-263) Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2600 Stücke - Preis und Lieferfrist anzeigen
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SIHD7N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 7A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 219 Stücke Lieferzeit 21-28 Tag (e) |
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SUM110N06-3M4L-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 110A TO263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 60V 110A D2PAK FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3.75W Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drain to Source Voltage (Vdss): 60V |
auf Bestellung 1810 Stücke Lieferzeit 21-28 Tag (e) |
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IRFZ44RPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
auf Bestellung 46 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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IRLZ44PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 102 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1956 Stücke - Preis und Lieferfrist anzeigen
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IRF9530SPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 12A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHU7N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 7A IPAK Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Packaging: Tube Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFI9520GPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 5.2A TO220-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 172 Stücke Lieferzeit 21-28 Tag (e) |
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IRF624SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 4.4A D2PAK Part Status: Active Supplier Device Package: D²PAK (TO-263) Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 374 Stücke Lieferzeit 21-28 Tag (e) |
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IRFIZ34GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 20A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 20 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 118 Stücke - Preis und Lieferfrist anzeigen
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SI7868ADP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 40A PPAK SO-8 Base Part Number: SI7868 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 42804 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 40A PPAK SO-8 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI7868 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 20V |
auf Bestellung 1994 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 42804 Stücke - Preis und Lieferfrist anzeigen
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IRFI730GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 3.7A TO220-3 Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 301 Stücke Lieferzeit 21-28 Tag (e) |
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IRFL9014PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 1.8A SOT223 Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
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SUM110N08-07P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 75V 110A D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drain to Source Voltage (Vdss): 75V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SUM110N05-06L-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 55V 110A D2PAK Supplier Device Package: TO-263 (D2Pak) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drain to Source Voltage (Vdss): 55V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Power - Max: 3.7W Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
auf Bestellung 1600 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1600 Stücke - Preis und Lieferfrist anzeigen
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IRFI644GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 7.9A TO220-3 Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Packaging: Tube |
auf Bestellung 2266 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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IRFP240PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 20A TO247-3 Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFI840GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 4.6A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRF740APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Technology: MOSFET (Metal Oxide) Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V |
auf Bestellung 1904 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2317 Stücke - Preis und Lieferfrist anzeigen
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IRF830ALPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5A I2PAK Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Part Status: Active Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4.5V @ 250µA |
auf Bestellung 385 Stücke Lieferzeit 21-28 Tag (e) |
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SUM60N10-17-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 60A TO263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 100V Part Status: Active Packaging: Tape & Reel (TR) Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 100V 60A TO263 Part Status: Active Packaging: Cut Tape (CT) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 534 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 60A D2PAK Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3.75W Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V |
auf Bestellung 5482 Stücke Lieferzeit 21-28 Tag (e) |
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SUM110P08-11L-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 110A TO263 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SUM110 |
auf Bestellung 6400 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 80V 110A TO263 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SUM110 |
auf Bestellung 7005 Stücke Lieferzeit 21-28 Tag (e) |
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SUM90P10-19L-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 90A TO263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 427 Stücke - Preis und Lieferfrist anzeigen
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SUM90N03-2M2P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO263 Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFI840GLCPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 4.5A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
auf Bestellung 13 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
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IRFBF20LPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 900V 1.7A I2PAK Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drain to Source Voltage (Vdss): 900V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SUM110P04-04L-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 110A TO263 Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFB9N60APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 9.2A TO220AB Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
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SUM110P04-05-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 110A TO263 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Power Dissipation (Max): 15W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SUM110 |
auf Bestellung 1600 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 40V 110A TO263 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Power Dissipation (Max): 15W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SUM110 |
auf Bestellung 2546 Stücke Lieferzeit 21-28 Tag (e) |
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IRFIB7N50APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 6.6A TO220-3 Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFP9240PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 12A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
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IRF740ALPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: I2PAK Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFI820GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 2.1A TO220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab |
auf Bestellung 849 Stücke Lieferzeit 21-28 Tag (e) |
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IRFZ44SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 150W (Tc) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 64 Stücke Lieferzeit 21-28 Tag (e) |
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IRLR014 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A DPAK Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs (Max): ±10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: IRLR014 |
auf Bestellung 1764 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
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IRFP350PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 16A TO247-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 400 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFB9N65APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 8.5A TO220AB Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFSL9N60APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 9.2A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
auf Bestellung 467 Stücke Lieferzeit 21-28 Tag (e) |
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IRLI640GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 9.9A TO220FP Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Base Part Number: IRLI640 Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 40W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 5.9A, 5V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc) |
auf Bestellung 1309 Stücke Lieferzeit 21-28 Tag (e) |
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IRLIZ44GPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 30A TO220-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Supplier Device Package: TO-220-3 Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQ2301ES-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 3.9A TO236 Base Part Number: SQ2301 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236 (SOT-23) Mounting Type: Surface Mount Power Dissipation (Max): 3W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active |
auf Bestellung 4831 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 31515 Stücke - Preis und Lieferfrist anzeigen
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DG418DY-T1 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH CMOS 8SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 35Ohm Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 175ns, 145ns Charge Injection: 60pC Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Current - Leakage (IS(off)) (Max): 250pA Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9394 Stücke - Preis und Lieferfrist anzeigen
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DG419DY-T1 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH CMOS 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Switch Time (Ton, Toff) (Max): 175ns, 145ns Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Charge Injection: 60pC Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V Supplier Device Package: 8-SOIC On-State Resistance (Max): 35Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 370 Stücke - Preis und Lieferfrist anzeigen
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DG417LDY-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SPST 8SOIC Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 43ns, 31ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -71dB @ 1MHz Charge Injection: 1pC Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Supplier Device Package: 8-SOIC On-State Resistance (Max): 20Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Number of Circuits: 1 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG411LDY |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST LV 16-SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
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DG442LDY-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -95dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Charge Injection: 5pC -3db Bandwidth: 280MHz Switch Time (Ton, Toff) (Max): 60ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Channel-to-Channel Matching (ΔRon): 100mOhm On-State Resistance (Max): 30Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
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DG9425DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Voltage - Supply, Single (V+): 3V ~ 16V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V |
auf Bestellung 3440 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Supplier Device Package: 16-TSSOP On-State Resistance (Max): 3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Package / Case: 16-TSSOP (0.173", 4.40mm Width) Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -77dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 49pF, 37pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 51ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V |
auf Bestellung 3440 Stücke Lieferzeit 21-28 Tag (e) |
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DG417BDY-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 8SOIC Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Switch Time (Ton, Toff) (Max): 89ns, 80ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Charge Injection: 38pC Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V Supplier Device Package: 8-SOIC On-State Resistance (Max): 25Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG418BDY-T1-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SPST 8SOIC Base Part Number: DG418 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 89ns, 80ns Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V On-State Resistance (Max): 25Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9858 Stücke - Preis und Lieferfrist anzeigen
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DG419BDY-T1-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH CMOS 8SOIC Voltage - Supply, Dual (V±): ±15V Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Switch Time (Ton, Toff) (Max): 89ns, 80ns Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Charge Injection: 38pC Crosstalk: -88dB @ 1MHz Voltage - Supply, Single (V+): 12V Supplier Device Package: 8-SOIC On-State Resistance (Max): 25Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1192 Stücke - Preis und Lieferfrist anzeigen
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DG411LDQ-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Charge Injection: 5pC Voltage - Supply, Dual (V±): ±3V ~ 6V Voltage - Supply, Single (V+): 2.7V ~ 12V Supplier Device Package: 16-TSSOP -3db Bandwidth: 280MHz On-State Resistance (Max): 17Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tube Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| DG2731DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Channel-to-Channel Matching (ΔRon): 30mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 450mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Channel-to-Channel Matching (ΔRon): 30mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -75dB @ 100kHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 450mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
| DG2732DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 400 MOHM 10DFN
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 450mOhm
Channel-to-Channel Matching (ΔRon): 30mOhm
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Charge Injection: 9pC
Channel Capacitance (CS(off), CD(off)): 104pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -75dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH 2XSPDT 400 MOHM 10DFN
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 450mOhm
Channel-to-Channel Matching (ΔRon): 30mOhm
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Charge Injection: 9pC
Channel Capacitance (CS(off), CD(off)): 104pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -75dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)
| DG2732DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Charge Injection: 9pC
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 30mOhm
On-State Resistance (Max): 450mOhm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -75dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Switch Circuit: SPDT
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Charge Injection: 9pC
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 30mOhm
On-State Resistance (Max): 450mOhm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -75dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Switch Circuit: SPDT
| DG2733DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 400 MOHM 10DFN
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 450mOhm
Channel-to-Channel Matching (ΔRon): 30mOhm
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Charge Injection: 9pC
Channel Capacitance (CS(off), CD(off)): 104pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -75dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH 2XSPDT 400 MOHM 10DFN
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 450mOhm
Channel-to-Channel Matching (ΔRon): 30mOhm
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Charge Injection: 9pC
Channel Capacitance (CS(off), CD(off)): 104pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -75dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)
| DG2733DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: DG2733
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -75dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Charge Injection: 9pC
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 30mOhm
On-State Resistance (Max): 450mOhm
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: DG2733
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -75dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Charge Injection: 9pC
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 30mOhm
On-State Resistance (Max): 450mOhm
Number of Circuits: 2
| DG2753DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH TRIPLE SPDT 16QFN
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 1.2Ohm
Channel-to-Channel Matching (ΔRon): 600 mOhm (Max)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 30ns
Charge Injection: -25pC
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -90dB @ 10MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH TRIPLE SPDT 16QFN
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 1.2Ohm
Channel-to-Channel Matching (ΔRon): 600 mOhm (Max)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 30ns
Charge Injection: -25pC
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -90dB @ 10MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)
| DG2753DQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH TRIPLE SPDT 16TSSOP
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 1.2Ohm
Channel-to-Channel Matching (ΔRon): 600 mOhm (Max)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 30ns
Charge Injection: -25pC
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -90dB @ 10MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH TRIPLE SPDT 16TSSOP
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 3
On-State Resistance (Max): 1.2Ohm
Channel-to-Channel Matching (ΔRon): 600 mOhm (Max)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 30ns
Charge Injection: -25pC
Channel Capacitance (CS(off), CD(off)): 35pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -90dB @ 10MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
| DG411LDQ-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-TSSOP
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 280MHz
On-State Resistance (Max): 17Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 1MHz
Charge Injection: 5pC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST LV 16-TSSOP
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 280MHz
On-State Resistance (Max): 17Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 1MHz
Charge Injection: 5pC
| DG9232DY-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH DUAL SPST 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
| DG9233DY-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: DG9233
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH DUAL SPST 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF, 13pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -90dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: DG9233
| DG9431DY-T1 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 5V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH SPDT LV 8SOIC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
On-State Resistance (Max): 30Ohm
Channel-to-Channel Matching (ΔRon): 400mOhm
Voltage - Supply, Single (V+): 2.7V ~ 5V
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Charge Injection: 2pC
Channel Capacitance (CS(off), CD(off)): 7pF
Current - Leakage (IS(off)) (Max): 100pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| DG413LDQ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
On-State Resistance (Max): 17Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Charge Injection: 5pC
-3db Bandwidth: 280MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST LV 16-TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
On-State Resistance (Max): 17Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Charge Injection: 5pC
-3db Bandwidth: 280MHz
| DG412LDQ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 17Ohm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Switch Time (Ton, Toff) (Max): 19ns, 12ns
-3db Bandwidth: 280MHz
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -95dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16TSSOP
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 17Ohm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Switch Time (Ton, Toff) (Max): 19ns, 12ns
-3db Bandwidth: 280MHz
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -95dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
| DG2031DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL CMOS 10MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 117pF
Switch Time (Ton, Toff) (Max): 58ns, 49ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -71dB @ 1MHz
Charge Injection: 4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 750mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH DUAL CMOS 10MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 117pF
Switch Time (Ton, Toff) (Max): 58ns, 49ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -71dB @ 1MHz
Charge Injection: 4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 750mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
| DG2035DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10MSOP
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 1Ohm
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 58ns, 49ns
Charge Injection: 4pC
Channel Capacitance (CS(off), CD(off)): 117pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -71dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-MSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH DUAL SPDT 10MSOP
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 2
On-State Resistance (Max): 1Ohm
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 58ns, 49ns
Charge Injection: 4pC
Channel Capacitance (CS(off), CD(off)): 117pF
Current - Leakage (IS(off)) (Max): 2nA
Crosstalk: -71dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-MSOP
| DG308ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: -10pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16SOIC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: -10pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 100Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 11pF, 8pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
| DG309DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST/CMOS 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke Description: IC SWITCH QUAD SPST/CMOS 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7414 Stücke - Preis und Lieferfrist anzeigen
|
| DG417DY-T1 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8SOIC
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH SPST 8SOIC
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 10000 Stücke - Preis und Lieferfrist anzeigen
| SI9200EY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC TRANSCEIVER 1/1 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC TRANSCEIVER 1/1 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Protocol: CANbus
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
| SIP21108DT-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC REG LIN POS ADJ 150MA TSOT23
Output Type: Adjustable
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.22V @ 150mA
PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 5.78V
Supplier Device Package: TSOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 85 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG LIN POS ADJ 150MA TSOT23
Output Type: Adjustable
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.22V @ 150mA
PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 5.78V
Supplier Device Package: TSOT-23-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 85 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
auf Bestellung 2325 Stücke - Preis und Lieferfrist anzeigen
| SIP21106DR-18-E3 |
|
Hersteller: Vishay Siliconix
Description: IC REG LINEAR 1.8V 150MA SC70-5
Protection Features: Over Temperature, Short Circuit
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 85 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG LINEAR 1.8V 150MA SC70-5
Protection Features: Over Temperature, Short Circuit
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 85 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
auf Bestellung 27000 Stücke - Preis und Lieferfrist anzeigen
| SIP21106DR-33-E3 |
|
Hersteller: Vishay Siliconix
Description: IC REG LINEAR 3.3V 150MA SC70-5
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 85 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.22V @ 150mA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG LINEAR 3.3V 150MA SC70-5
Current - Output: 150mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 5-TSSOP, SC-70-5, SOT-353
PSRR: 75dB ~ 40dB (1kHz ~ 100kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 3.3V
Supplier Device Package: SC-70-5
Number of Regulators: 1
Voltage - Input (Max): 6V
Current - Quiescent (Iq): 85 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 0.22V @ 150mA
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
| IRFS9N60ATRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 9.2A D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 734 Stücke - Preis und Lieferfrist anzeigen
| IRF720LPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.3A TO262-3
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 3.3A TO262-3
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Packaging: Tube
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
| IRFZ40PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 50A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
| IRL540SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 28A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 5V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Packaging: Tube
auf Bestellung 2600 Stücke - Preis und Lieferfrist anzeigen
| SIHD7N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 219 Stücke Description: MOSFET N-CH 600V 7A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
|
| SUM110N06-3M4L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 110A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 110A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 1810 Stücke - Preis und Lieferfrist anzeigen
| SUM110N06-3M4L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 110A D2PAK
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 60V
auf Bestellung 1810 Stücke Description: MOSFET N-CH 60V 110A D2PAK
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 60V
Lieferzeit 21-28 Tag (e)
| IRFZ44RPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 46 Stücke Description: MOSFET N-CH 60V 50A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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| IRLZ44PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 102 Stücke Description: MOSFET N-CH 60V 50A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 1956 Stücke - Preis und Lieferfrist anzeigen
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| IRF9530SPBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 12A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
| SIHU7N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A IPAK
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 7A IPAK
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| IRFI9520GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.2A TO220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 172 Stücke Description: MOSFET P-CH 100V 5.2A TO220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Lieferzeit 21-28 Tag (e)
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| IRF624SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 4.4A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 374 Stücke Description: MOSFET N-CH 250V 4.4A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
| IRFIZ34GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 20 Stücke Description: MOSFET N-CH 60V 20A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 118 Stücke - Preis und Lieferfrist anzeigen
| SI7868ADP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
Base Part Number: SI7868
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 40A PPAK SO-8
Base Part Number: SI7868
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 44798 Stücke - Preis und Lieferfrist anzeigen
| SI7868ADP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7868
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 1994 Stücke Description: MOSFET N-CH 20V 40A PPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7868
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 42804 Stücke - Preis und Lieferfrist anzeigen
| IRFI730GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.7A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 301 Stücke Description: MOSFET N-CH 400V 3.7A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Lieferzeit 21-28 Tag (e)
| IRFL9014PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.8A SOT223
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 1.8A SOT223
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
| SUM110N08-07P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 110A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 110A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
| SUM110N05-06L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 110A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 55V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Power - Max: 3.7W
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
auf Bestellung 1600 Stücke Description: MOSFET N-CH 55V 110A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 55V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Power - Max: 3.7W
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 1600 Stücke - Preis und Lieferfrist anzeigen
| IRFI644GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 7.9A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tube
auf Bestellung 2266 Stücke Description: MOSFET N-CH 250V 7.9A TO220-3
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
| IRFP240PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 20A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 20A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| IRFI840GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 4.6A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
| IRF740APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
auf Bestellung 1904 Stücke Description: MOSFET N-CH 400V 10A TO220AB
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2317 Stücke - Preis und Lieferfrist anzeigen
|
| IRF830ALPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A I2PAK
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
auf Bestellung 385 Stücke Description: MOSFET N-CH 500V 5A I2PAK
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Lieferzeit 21-28 Tag (e)
|
| SUM60N10-17-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 60A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 6016 Stücke - Preis und Lieferfrist anzeigen
| SUM60N10-17-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263
Part Status: Active
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 534 Stücke Description: MOSFET N-CH 100V 60A TO263
Part Status: Active
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
auf Bestellung 5482 Stücke - Preis und Lieferfrist anzeigen
| SUM60N10-17-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A D2PAK
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
auf Bestellung 5482 Stücke Description: MOSFET N-CH 100V 60A D2PAK
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 534 Stücke - Preis und Lieferfrist anzeigen
| SUM110P08-11L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
auf Bestellung 6400 Stücke Description: MOSFET P-CH 80V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
Lieferzeit 21-28 Tag (e)
auf Bestellung 7005 Stücke - Preis und Lieferfrist anzeigen
| SUM110P08-11L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
auf Bestellung 7005 Stücke Description: MOSFET P-CH 80V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
Lieferzeit 21-28 Tag (e)
auf Bestellung 6400 Stücke - Preis und Lieferfrist anzeigen
| SUM90P10-19L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 90A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 90A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 427 Stücke - Preis und Lieferfrist anzeigen
| SUM90N03-2M2P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO263
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 90A TO263
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
| IRFI840GLCPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
auf Bestellung 13 Stücke Description: MOSFET N-CH 500V 4.5A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
|
| IRFBF20LPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A I2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 1.7A I2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 900V
| SUM110P04-04L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| IRFB9N60APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 9.2A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
| SUM110P04-05-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
Power Dissipation (Max): 15W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
auf Bestellung 1600 Stücke Description: MOSFET P-CH 40V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
Power Dissipation (Max): 15W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
Lieferzeit 21-28 Tag (e)
auf Bestellung 2546 Stücke - Preis und Lieferfrist anzeigen
| SUM110P04-05-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
Power Dissipation (Max): 15W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
auf Bestellung 2546 Stücke Description: MOSFET P-CH 40V 110A TO263
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V
Power Dissipation (Max): 15W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SUM110
Lieferzeit 21-28 Tag (e)
auf Bestellung 1600 Stücke - Preis und Lieferfrist anzeigen
| IRFIB7N50APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 6.6A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 6.6A TO220-3
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
| IRFP9240PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 12A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 12A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
| IRF740ALPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 10A I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Packaging: Tube
| IRFI820GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.1A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
auf Bestellung 849 Stücke Description: MOSFET N-CH 500V 2.1A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Lieferzeit 21-28 Tag (e)
| IRFZ44SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 64 Stücke Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
|
| IRLR014 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRLR014
auf Bestellung 1764 Stücke Description: MOSFET N-CH 60V 7.7A DPAK
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRLR014
Lieferzeit 21-28 Tag (e)
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
| IRFP350PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 16A TO247-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 16A TO247-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
| IRFB9N65APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 8.5A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 8.5A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 930mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
| IRFSL9N60APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
auf Bestellung 467 Stücke Description: MOSFET N-CH 600V 9.2A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| IRLI640GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9.9A TO220FP
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: IRLI640
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
auf Bestellung 1309 Stücke Description: MOSFET N-CH 200V 9.9A TO220FP
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: IRLI640
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.9A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Lieferzeit 21-28 Tag (e)
| IRLIZ44GPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: TO-220-3
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 30A TO220-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Supplier Device Package: TO-220-3
Part Status: Active
| SQ2301ES-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A TO236
Base Part Number: SQ2301
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
auf Bestellung 4831 Stücke Description: MOSFET P-CH 20V 3.9A TO236
Base Part Number: SQ2301
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 31515 Stücke - Preis und Lieferfrist anzeigen
| DG418DY-T1 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 35Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 60pC
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH CMOS 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 35Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Charge Injection: 60pC
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
auf Bestellung 9394 Stücke - Preis und Lieferfrist anzeigen
| DG419DY-T1 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH CMOS 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
auf Bestellung 370 Stücke - Preis und Lieferfrist anzeigen
| DG417LDY-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8SOIC
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -71dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 20Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH SPST 8SOIC
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -71dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 20Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
| DG411LDY |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST LV 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
| DG442LDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 5pC
-3db Bandwidth: 280MHz
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 30Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 5pC
-3db Bandwidth: 280MHz
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 30Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| DG9425DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Voltage - Supply, Single (V+): 3V ~ 16V
auf Bestellung 3000 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Voltage - Supply, Single (V+): 3V ~ 16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6880 Stücke - Preis und Lieferfrist anzeigen
| DG9425DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
auf Bestellung 3440 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6440 Stücke - Preis und Lieferfrist anzeigen
| DG9425DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
auf Bestellung 3440 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6440 Stücke - Preis und Lieferfrist anzeigen
| DG417BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 38pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 8SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 38pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| DG418BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH SPST 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 9858 Stücke - Preis und Lieferfrist anzeigen
| DG419BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Voltage - Supply, Dual (V±): ±15V
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 38pC
Crosstalk: -88dB @ 1MHz
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH CMOS 8SOIC
Voltage - Supply, Dual (V±): ±15V
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 38pC
Crosstalk: -88dB @ 1MHz
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1192 Stücke - Preis und Lieferfrist anzeigen
| DG411LDQ-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 280MHz
On-State Resistance (Max): 17Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16TSSOP
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 280MHz
On-State Resistance (Max): 17Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
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