Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SI7852DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 80V 7.6A PPAK SO-8 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta) FET Type: N-Channel Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 80 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 85054 Stücke - Preis und Lieferfrist anzeigen
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IRFU014PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A TO251AA Base Part Number: IRFU014 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
auf Bestellung 1178 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI4408DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 14A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 193000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 14A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 467 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 193000 Stücke - Preis und Lieferfrist anzeigen
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SI7485DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 12.5A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Power - Max: 1.8W Gate Charge (Qg) (Max) @ Vgs: 150nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 1mA Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: MOSFET P-Channel, Metal Oxide Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3843 Stücke - Preis und Lieferfrist anzeigen
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IRFU9024PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A TO251AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
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IRFD9220PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 560MA 4DIP Current - Continuous Drain (Id) @ 25°C: 560mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFR224PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 3.8A DPAK Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 21 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1248 Stücke - Preis und Lieferfrist anzeigen
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IRLR120PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRLZ24PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO220AB Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V |
auf Bestellung 760 Stücke Lieferzeit 21-28 Tag (e) |
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SI7172DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 25A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 200V 25A PPAK SO-8 Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
auf Bestellung 203 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 200V 25A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V Power - Max: 96W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 4001 Stücke Lieferzeit 21-28 Tag (e) |
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SIR470DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR470 |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1858 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR470 |
auf Bestellung 6649 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1858 Stücke - Preis und Lieferfrist anzeigen
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SIR890DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 50A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2747pF @ 10V Power Dissipation (Max): 5W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR890 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798625 Stücke - Preis und Lieferfrist anzeigen
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SIHU5N50D-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5.3A TO251AA Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIR804DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8 Base Part Number: SIR804 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI7164DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21825 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 726 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 21825 Stücke - Preis und Lieferfrist anzeigen
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IRFU210PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A TO251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube |
auf Bestellung 1696 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1625 Stücke - Preis und Lieferfrist anzeigen
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SI7788DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 69W Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5938 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Power - Max: 69W Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 6870 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5938 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 69W Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 6870 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5938 Stücke - Preis und Lieferfrist anzeigen
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SI7738DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 30A PPAK SO-8 Base Part Number: SI7738 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Part Status: Active Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7152 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 150V 30A PPAK SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Base Part Number: SI7738 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 3412 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7152 Stücke - Preis und Lieferfrist anzeigen
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IRFR9310PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 400V 1.8A DPAK Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 640 Stücke - Preis und Lieferfrist anzeigen
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IRF730PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A TO220AB Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 262 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3880 Stücke - Preis und Lieferfrist anzeigen
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SI7113DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A PPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 2708 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10821 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 100V 13.2A PPAK Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 2708 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10821 Stücke - Preis und Lieferfrist anzeigen
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SI7430DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 26A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 5.2W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2859 Stücke - Preis und Lieferfrist anzeigen
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SI7194DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Power - Max: 83W Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI4890DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 11A 8-SOIC Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±25V Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4890 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 156018 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 11A 8-SOIC FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.5W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Drain to Source Voltage (Vdss): 30V |
auf Bestellung 11338 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 156018 Stücke - Preis und Lieferfrist anzeigen
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SI7136DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 30A PPAK SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 39W Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 20V 30A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Power - Max: 39W Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 20V Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 135 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 30A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 39W |
auf Bestellung 135 Stücke Lieferzeit 21-28 Tag (e) |
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SIE822DF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 50A 10POLARPAK Base Part Number: SIE822 Package / Case: 10-PolarPAK® (S) Supplier Device Package: 10-PolarPAK® (S) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 50A 10POLARPAK Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIE822 Package / Case: 10-PolarPAK® (S) Supplier Device Package: 10-PolarPAK® (S) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V Vgs (Max): ±20V |
auf Bestellung 3473 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 50A POLARPAK Supplier Device Package: 10-PolarPAK® (S) Package / Case: 10-PolarPAK® (S) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 104W Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18.3A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 195 Stücke Lieferzeit 21-28 Tag (e) |
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SUD50P04-15-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRL530PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 15A TO220AB Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Packaging: Tube Package / Case: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
auf Bestellung 597 Stücke Lieferzeit 21-28 Tag (e) |
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SUM27N20-78-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 27A D2PAK Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3.75W Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 200V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI7450DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 3.2A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19153 Stücke - Preis und Lieferfrist anzeigen
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SI4888DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 11A 8SO Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
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SI7790DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Base Part Number: SI7790 Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 691 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SI7790 Supplier Device Package: PowerPAK® SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Part Status: Obsolete FET Type: N-Channel Packaging: Cut Tape (CT) |
auf Bestellung 691 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 691 Stücke - Preis und Lieferfrist anzeigen
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SI7460DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 11A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 45321 Stücke - Preis und Lieferfrist anzeigen
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SI7459DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 13A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W FET Type: MOSFET P-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFUC20PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 2A TO251AA Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
auf Bestellung 19 Stücke Lieferzeit 21-28 Tag (e) |
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IRFU9014PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 5.1A TO251AA Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
auf Bestellung 1762 Stücke Lieferzeit 21-28 Tag (e) |
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SUM90N08-6M2P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 75V 90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Drain to Source Voltage (Vdss): 75V Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFU220PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 4.8A TO251AA Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFU1N60APBF |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 1.4A TO251AA Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRF644PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 14A TO220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 632 Stücke - Preis und Lieferfrist anzeigen
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SI7658ADP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Base Part Number: SI7658 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3515 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Base Part Number: SI7658 Package / Case: PowerPAK® SO-8 Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 83W (Tc) |
auf Bestellung 395 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3515 Stücke - Preis und Lieferfrist anzeigen
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SI7802DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 1.24A 1212-8 FET Type: MOSFET N-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Drain to Source Voltage (Vdss): 250V Power - Max: 1.5W Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta) Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SUD50N10-18P-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 8.2A/50A TO252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3W (Ta), 136.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI4108DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 75V 20.5A 8-SOIC Supplier Device Package: 8-SOIC N Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 38V Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 20.5A (Tc) Drain to Source Voltage (Vdss): 75V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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IRFU214PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 2.2A TO251AA Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 1978 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
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IRFD010PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 50V 1.7A 4DIP Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 860mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFD020PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 50V 2.4A 4DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6948 Stücke - Preis und Lieferfrist anzeigen
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IRFR9214PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 250V 2.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 3152 Stücke Lieferzeit 21-28 Tag (e) |
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SI4838DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 17A 8SO Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI4838 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.6W (Ta) Vgs (Max): ±8V |
auf Bestellung 4313 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 90080 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 12V 17A 8SO Base Part Number: SI4838 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.6W (Ta) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 4331 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 90080 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 12V 17A 8-SOIC FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Power - Max: 1.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO |
auf Bestellung 2839 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 90080 Stücke - Preis und Lieferfrist anzeigen
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SI7483ADP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 14A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12578 Stücke - Preis und Lieferfrist anzeigen
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IRF9530PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 12A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 100 V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Packaging: Tube Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1914 Stücke - Preis und Lieferfrist anzeigen
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IRFBG20PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 1000V 1.4A TO220AB Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 410 Stücke - Preis und Lieferfrist anzeigen
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IRF634PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 8.1A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFR9220PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 3.6A DPAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) FET Type: P-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SUM55P06-19L-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 55A TO263 Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4967 Stücke - Preis und Lieferfrist anzeigen
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IRF720SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 3.3A D2PAK Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 50W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59800 Stücke - Preis und Lieferfrist anzeigen
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IRFD224PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 630MA 4DIP Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1W (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI7192DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI7192 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 34503 Stücke - Preis und Lieferfrist anzeigen
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| SI7852DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 7.6A PPAK SO-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
auf Bestellung 85054 Stücke - Preis und Lieferfrist anzeigen
| IRFU014PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A TO251AA
Base Part Number: IRFU014
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 1178 Stücke Description: MOSFET N-CH 60V 7.7A TO251AA
Base Part Number: IRFU014
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI4408DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 14A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 193467 Stücke - Preis und Lieferfrist anzeigen
| SI4408DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 467 Stücke Description: MOSFET N-CH 20V 14A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 193000 Stücke - Preis und Lieferfrist anzeigen
| SI7485DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 9000 Stücke Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 3843 Stücke - Preis und Lieferfrist anzeigen
| IRFU9024PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A TO251AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A TO251AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
| IRFD9220PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 560MA 4DIP
Current - Continuous Drain (Id) @ 25°C: 560mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 560MA 4DIP
Current - Continuous Drain (Id) @ 25°C: 560mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V
| IRFR224PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 21 Stücke Description: MOSFET N-CH 250V 3.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 1248 Stücke - Preis und Lieferfrist anzeigen
| IRLR120PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 7.7A DPAK
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
| IRLZ24PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
auf Bestellung 760 Stücke Description: MOSFET N-CH 60V 17A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Lieferzeit 21-28 Tag (e)
|
| SI7172DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 4204 Stücke - Preis und Lieferfrist anzeigen
| SI7172DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 203 Stücke Description: MOSFET N-CH 200V 25A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 4001 Stücke - Preis und Lieferfrist anzeigen
| SI7172DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power - Max: 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 4001 Stücke Description: MOSFET N-CH 200V 25A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power - Max: 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 203 Stücke - Preis und Lieferfrist anzeigen
| SIR470DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
auf Bestellung 6000 Stücke Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
Lieferzeit 21-28 Tag (e)
auf Bestellung 8507 Stücke - Preis und Lieferfrist anzeigen
| SIR470DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
auf Bestellung 6649 Stücke Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
Lieferzeit 21-28 Tag (e)
auf Bestellung 7858 Stücke - Preis und Lieferfrist anzeigen
| SIR890DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2747pF @ 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR890
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2747pF @ 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR890
auf Bestellung 798625 Stücke - Preis und Lieferfrist anzeigen
| SIHU5N50D-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO251AA
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 5.3A TO251AA
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
| SIR804DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Base Part Number: SIR804
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 60A PPAK SO-8
Base Part Number: SIR804
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
| SI7164DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
auf Bestellung 22551 Stücke - Preis und Lieferfrist anzeigen
| SI7164DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 726 Stücke Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 21825 Stücke - Preis und Lieferfrist anzeigen
|
| IRFU210PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1696 Stücke Description: MOSFET N-CH 200V 2.6A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 1625 Stücke - Preis und Lieferfrist anzeigen
| SI7788DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 19678 Stücke - Preis und Lieferfrist anzeigen
| SI7788DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6870 Stücke Description: MOSFET N-CH 30V 50A PPAK SO-8
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 15808 Stücke - Preis und Lieferfrist anzeigen
| SI7788DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6870 Stücke Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 15808 Stücke - Preis und Lieferfrist anzeigen
| SI7738DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3000 Stücke Description: MOSFET N-CH 150V 30A PPAK SO-8
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 10564 Stücke - Preis und Lieferfrist anzeigen
| SI7738DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3412 Stücke Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 10152 Stücke - Preis und Lieferfrist anzeigen
| IRFR9310PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 400V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 640 Stücke - Preis und Lieferfrist anzeigen
| IRF730PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 262 Stücke Description: MOSFET N-CH 400V 5.5A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 3880 Stücke - Preis und Lieferfrist anzeigen
|
| SI7113DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2708 Stücke Description: MOSFET P-CH 100V 13.2A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 13529 Stücke - Preis und Lieferfrist anzeigen
| SI7113DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2708 Stücke Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 13529 Stücke - Preis und Lieferfrist anzeigen
| SI7430DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 26A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 2859 Stücke - Preis und Lieferfrist anzeigen
| SI7194DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
| SI4890DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±25V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4890
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 11A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±25V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4890
auf Bestellung 167356 Stücke - Preis und Lieferfrist anzeigen
| SI4890DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Drain to Source Voltage (Vdss): 30V
auf Bestellung 11338 Stücke Description: MOSFET N-CH 30V 11A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Drain to Source Voltage (Vdss): 30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 156018 Stücke - Preis und Lieferfrist anzeigen
| SI7136DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 270 Stücke - Preis und Lieferfrist anzeigen
| SI7136DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 135 Stücke Description: MOSFET N-CH 20V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 135 Stücke - Preis und Lieferfrist anzeigen
| SI7136DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
auf Bestellung 135 Stücke Description: MOSFET N-CH 20V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
Lieferzeit 21-28 Tag (e)
auf Bestellung 135 Stücke - Preis und Lieferfrist anzeigen
| SIE822DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10POLARPAK
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke Description: MOSFET N-CH 20V 50A 10POLARPAK
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 3668 Stücke - Preis und Lieferfrist anzeigen
| SIE822DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10POLARPAK
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
auf Bestellung 3473 Stücke Description: MOSFET N-CH 20V 50A 10POLARPAK
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3195 Stücke - Preis und Lieferfrist anzeigen
| SIE822DF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 195 Stücke Description: MOSFET N-CH 20V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 6473 Stücke - Preis und Lieferfrist anzeigen
| SUD50P04-15-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
| IRL530PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
auf Bestellung 597 Stücke Description: MOSFET N-CH 100V 15A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
Lieferzeit 21-28 Tag (e)
|
| SUM27N20-78-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 27A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 27A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
| SI7450DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 19153 Stücke - Preis und Lieferfrist anzeigen
| SI4888DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
| SI7790DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7790
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7790
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 1382 Stücke - Preis und Lieferfrist anzeigen
| SI7790DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7790
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Cut Tape (CT)
auf Bestellung 691 Stücke Description: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7790
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 691 Stücke - Preis und Lieferfrist anzeigen
| SI7460DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 45321 Stücke - Preis und Lieferfrist anzeigen
| SI7459DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
| IRFUC20PBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 19 Stücke Description: MOSFET N-CH 600V 2A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| IRFU9014PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1762 Stücke Description: MOSFET P-CH 60V 5.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| SUM90N08-6M2P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Drain to Source Voltage (Vdss): 75V
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Drain to Source Voltage (Vdss): 75V
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
| IRFU220PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 4.8A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
| IRFU1N60APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A TO251AA
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 1.4A TO251AA
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
| IRF644PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 14A TO220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 632 Stücke - Preis und Lieferfrist anzeigen
| SI7658ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3910 Stücke - Preis und Lieferfrist anzeigen
| SI7658ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
auf Bestellung 395 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3515 Stücke - Preis und Lieferfrist anzeigen
| SI7802DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Drain to Source Voltage (Vdss): 250V
Power - Max: 1.5W
Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 1.24A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Drain to Source Voltage (Vdss): 250V
Power - Max: 1.5W
Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SUD50N10-18P-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 8.2A/50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 8.2A/50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
| SI4108DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 20.5A 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 38V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 20.5A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2500 Stücke Description: MOSFET N-CH 75V 20.5A 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 38V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 20.5A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
| IRFU214PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A TO251AA
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1978 Stücke Description: MOSFET N-CH 250V 2.2A TO251AA
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
|
| IRFD010PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 1.7A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 860mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 50V 1.7A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 860mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
| IRFD020PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 2.4A 4DIP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 50V 2.4A 4DIP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
auf Bestellung 6948 Stücke - Preis und Lieferfrist anzeigen
| IRFR9214PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3152 Stücke Description: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| SI4838DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
auf Bestellung 4313 Stücke Description: MOSFET N-CH 12V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Lieferzeit 21-28 Tag (e)
auf Bestellung 97250 Stücke - Preis und Lieferfrist anzeigen
| SI4838DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4331 Stücke Description: MOSFET N-CH 12V 17A 8SO
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 97232 Stücke - Preis und Lieferfrist anzeigen
| SI4838DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 2839 Stücke Description: MOSFET N-CH 12V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Lieferzeit 21-28 Tag (e)
auf Bestellung 98724 Stücke - Preis und Lieferfrist anzeigen
| SI7483ADP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 14A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
auf Bestellung 12578 Stücke - Preis und Lieferfrist anzeigen
| IRF9530PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
auf Bestellung 1914 Stücke - Preis und Lieferfrist anzeigen
| IRFBG20PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 1.4A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 1.4A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 410 Stücke - Preis und Lieferfrist anzeigen
| IRF634PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 8.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
| IRFR9220PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 3.6A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
| SUM55P06-19L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 55A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 55A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 4967 Stücke - Preis und Lieferfrist anzeigen
| IRF720SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.3A D2PAK
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 3.3A D2PAK
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
auf Bestellung 59800 Stücke - Preis und Lieferfrist anzeigen
| IRFD224PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 630MA 4DIP
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 630MA 4DIP
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
| SI7192DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7192
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7192
Package / Case: PowerPAK® SO-8
auf Bestellung 34503 Stücke - Preis und Lieferfrist anzeigen
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