Die Produkte vishay siliconix

Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]
Foto Bezeichnung Tech.inf. Hersteller Beschreibung verfügbar/auf Bestellung
Preis
ohne MwSt
SI7852DP-T1-E3 SI7852DP-T1-E3 si7852dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 85054 Stücke - Preis und Lieferfrist anzeigen
IRFU014PBF IRFU014PBF sihfr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A TO251AA
Base Part Number: IRFU014
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 1178 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI4408DY-T1-E3 SI4408DY-T1-E3 70687.pdf Vishay Siliconix Description: MOSFET N-CH 20V 14A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 193000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 14A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 467 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 193000 Stücke - Preis und Lieferfrist anzeigen
SI7485DP-T1-E3 SI7485DP-T1-E3 72275.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3843 Stücke - Preis und Lieferfrist anzeigen
IRFU9024PBF IRFU9024PBF sihfr902.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8.8A TO251AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
IRFD9220PBF IRFD9220PBF sihfd922.pdf Vishay Siliconix Description: MOSFET P-CH 200V 560MA 4DIP
Current - Continuous Drain (Id) @ 25°C: 560mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR224PBF IRFR224PBF sihfr224.pdf Vishay Siliconix Description: MOSFET N-CH 250V 3.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1248 Stücke - Preis und Lieferfrist anzeigen
IRLR120PBF IRLR120PBF IRLR(U)120,%20SiHLR(U)120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ24PBF IRLZ24PBF sihlz24.pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
auf Bestellung 760 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.32 EUR
10+ 3.87 EUR
100+ 3.02 EUR
500+ 2.49 EUR
SI7172DP-T1-GE3 SI7172DP-T1-GE3 si7172dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 200V 25A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 203 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 200V 25A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power - Max: 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 4001 Stücke
Lieferzeit 21-28 Tag (e)
SIR470DP-T1-GE3 SIR470DP-T1-GE3 sir470dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1858 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
auf Bestellung 6649 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1858 Stücke - Preis und Lieferfrist anzeigen
SIR890DP-T1-GE3 SIR890DP-T1-GE3 sir890dp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2747pF @ 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR890
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798625 Stücke - Preis und Lieferfrist anzeigen
SIHU5N50D-E3 SIHU5N50D-E3 sihu5n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5.3A TO251AA
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR804DP-T1-GE3 SIR804DP-T1-GE3 sir804dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 60A PPAK SO-8
Base Part Number: SIR804
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7164DP-T1-GE3 SI7164DP-T1-GE3 si7164dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21825 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 726 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21825 Stücke - Preis und Lieferfrist anzeigen
4+ 7.41 EUR
10+ 6.65 EUR
100+ 5.45 EUR
500+ 4.64 EUR
IRFU210PBF IRFU210PBF sihfr210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.6A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1696 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1625 Stücke - Preis und Lieferfrist anzeigen
SI7788DP-T1-GE3 SI7788DP-T1-GE3 si7788dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5938 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6870 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5938 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6870 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5938 Stücke - Preis und Lieferfrist anzeigen
SI7738DP-T1-GE3 SI7738DP-T1-GE3 si7738dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 30A PPAK SO-8
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7152 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3412 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7152 Stücke - Preis und Lieferfrist anzeigen
IRFR9310PBF IRFR9310PBF sihfr931.pdf Vishay Siliconix Description: MOSFET P-CH 400V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 640 Stücke - Preis und Lieferfrist anzeigen
IRF730PBF IRF730PBF 91047.pdf Vishay Siliconix Description: MOSFET N-CH 400V 5.5A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 262 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3880 Stücke - Preis und Lieferfrist anzeigen
7+ 3.98 EUR
10+ 3.59 EUR
100+ 2.88 EUR
SI7113DN-T1-E3 SI7113DN-T1-E3 si7113dn.pdf Vishay Siliconix Description: MOSFET P-CH 100V 13.2A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2708 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10821 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2708 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10821 Stücke - Preis und Lieferfrist anzeigen
SI7430DP-T1-GE3 SI7430DP-T1-GE3 si7430dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 26A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2859 Stücke - Preis und Lieferfrist anzeigen
SI7194DP-T1-GE3 SI7194DP-T1-GE3 si7194dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4890DY-T1-E3 SI4890DY-T1-E3 si4890dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 11A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±25V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4890
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 156018 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 11A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Drain to Source Voltage (Vdss): 30V
auf Bestellung 11338 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 156018 Stücke - Preis und Lieferfrist anzeigen
SI7136DP-T1-E3 SI7136DP-T1-E3 73601.pdf Vishay Siliconix Description: MOSFET N-CH 20V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 135 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
auf Bestellung 135 Stücke
Lieferzeit 21-28 Tag (e)
SIE822DF-T1-GE3 SIE822DF-T1-GE3 sie822df.pdf Vishay Siliconix Description: MOSFET N-CH 20V 50A 10POLARPAK
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 50A 10POLARPAK
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
auf Bestellung 3473 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 195 Stücke
Lieferzeit 21-28 Tag (e)
SUD50P04-15-E3 SUD50P04-15-E3 71176.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL530PBF IRL530PBF IRL530,SiHL530.pdf Vishay Siliconix Description: MOSFET N-CH 100V 15A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
auf Bestellung 597 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.29 EUR
10+ 3.83 EUR
100+ 2.99 EUR
500+ 2.47 EUR
SUM27N20-78-E3 SUM27N20-78-E3 sum27n20.pdf Vishay Siliconix Description: MOSFET N-CH 200V 27A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7450DP-T1-GE3 SI7450DP-T1-GE3 si7450dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19153 Stücke - Preis und Lieferfrist anzeigen
SI4888DY-T1-E3 SI4888DY-T1-E3 71336.pdf Vishay Siliconix Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
SI7790DP-T1-GE3 SI7790DP-T1-GE3 si7790dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7790
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 691 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7790
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Cut Tape (CT)
auf Bestellung 691 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 691 Stücke - Preis und Lieferfrist anzeigen
SI7460DP-T1-E3 SI7460DP-T1-E3 si7460dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 45321 Stücke - Preis und Lieferfrist anzeigen
SI7459DP-T1-GE3 SI7459DP-T1-GE3 si7459dp.pdf Vishay Siliconix Description: MOSFET P-CH 30V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFUC20PBF IRFUC20PBF sihfrc20.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 600V 2A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.08 EUR
10+ 3.65 EUR
IRFU9014PBF IRFU9014PBF sihfr901.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1762 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.95 EUR
10+ 3.53 EUR
100+ 2.75 EUR
500+ 2.27 EUR
1000+ 1.79 EUR
SUM90N08-6M2P-E3 SUM90N08-6M2P-E3 sum90n08.pdf Vishay Siliconix Description: MOSFET N-CH 75V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Drain to Source Voltage (Vdss): 75V
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU220PBF IRFU220PBF sihfr220.pdf Vishay Siliconix Description: MOSFET N-CH 200V 4.8A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU1N60APBF IRFU1N60APBF sihfr1n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 1.4A TO251AA
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644PBF IRF644PBF sihf644.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A TO220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 632 Stücke - Preis und Lieferfrist anzeigen
SI7658ADP-T1-GE3 SI7658ADP-T1-GE3 si7658adp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3515 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
auf Bestellung 395 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3515 Stücke - Preis und Lieferfrist anzeigen
SI7802DN-T1-E3 SI7802DN-T1-E3 si7802dn.pdf Vishay Siliconix Description: MOSFET N-CH 250V 1.24A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Drain to Source Voltage (Vdss): 250V
Power - Max: 1.5W
Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N10-18P-GE3 SUD50N10-18P-GE3 sud50n10.pdf Vishay Siliconix Description: MOSFET N-CH 100V 8.2A/50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4108DY-T1-GE3 SI4108DY-T1-GE3 si4108dy.pdf Vishay Siliconix Description: MOSFET N-CH 75V 20.5A 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 38V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 20.5A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
IRFU214PBF IRFU214PBF sihfr214.pdf Vishay Siliconix Description: MOSFET N-CH 250V 2.2A TO251AA
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1978 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
8+ 3.59 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.07 EUR
1000+ 1.63 EUR
IRFD010PBF IRFD010PBF IRFD010,%20012.pdf Vishay Siliconix Description: MOSFET N-CH 50V 1.7A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 860mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFD020PBF IRFD020PBF sihfd020.pdf Vishay Siliconix Description: MOSFET N-CH 50V 2.4A 4DIP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6948 Stücke - Preis und Lieferfrist anzeigen
IRFR9214PBF IRFR9214PBF sihfr921.pdf Vishay Siliconix Description: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3152 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4 EUR
10+ 3.6 EUR
100+ 2.9 EUR
500+ 2.38 EUR
1000+ 2.04 EUR
SI4838DY-T1-E3 SI4838DY-T1-E3 71359.pdf Vishay Siliconix Description: MOSFET N-CH 12V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
auf Bestellung 4313 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90080 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 12V 17A 8SO
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4331 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90080 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 12V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 2839 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 90080 Stücke - Preis und Lieferfrist anzeigen
SI7483ADP-T1-E3 SI7483ADP-T1-E3 73025.pdf Vishay Siliconix Description: MOSFET P-CH 30V 14A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12578 Stücke - Preis und Lieferfrist anzeigen
IRF9530PBF IRF9530PBF sihf9530.pdf Vishay Siliconix Description: MOSFET P-CH 100V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1914 Stücke - Preis und Lieferfrist anzeigen
IRFBG20PBF IRFBG20PBF sihbg20.pdf Vishay Siliconix Description: MOSFET N-CH 1000V 1.4A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 410 Stücke - Preis und Lieferfrist anzeigen
IRF634PBF IRF634PBF irf634.pdf Vishay Siliconix Description: MOSFET N-CH 250V 8.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9220PBF IRFR9220PBF sihfr922.pdf Vishay Siliconix Description: MOSFET P-CH 200V 3.6A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM55P06-19L-E3 SUM55P06-19L-E3 sum55p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 55A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4967 Stücke - Preis und Lieferfrist anzeigen
IRF720SPBF IRF720SPBF sihf720s.pdf Vishay Siliconix Description: MOSFET N-CH 400V 3.3A D2PAK
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59800 Stücke - Preis und Lieferfrist anzeigen
IRFD224PBF IRFD224PBF sihfd224.pdf Vishay Siliconix Description: MOSFET N-CH 250V 630MA 4DIP
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7192DP-T1-GE3 SI7192DP-T1-GE3 si7192dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7192
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 34503 Stücke - Preis und Lieferfrist anzeigen
SI7852DP-T1-E3 si7852dp.pdf
SI7852DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 85054 Stücke - Preis und Lieferfrist anzeigen
IRFU014PBF sihfr014.pdf
IRFU014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A TO251AA
Base Part Number: IRFU014
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 1178 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI4408DY-T1-E3 70687.pdf
SI4408DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 193467 Stücke - Preis und Lieferfrist anzeigen
SI4408DY-T1-E3 70687.pdf
SI4408DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 467 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 193000 Stücke - Preis und Lieferfrist anzeigen
SI7485DP-T1-E3 72275.pdf
SI7485DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 1mA
Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3843 Stücke - Preis und Lieferfrist anzeigen
IRFU9024PBF sihfr902.pdf
IRFU9024PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A TO251AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
IRFD9220PBF sihfd922.pdf
IRFD9220PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 560MA 4DIP
Current - Continuous Drain (Id) @ 25°C: 560mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR224PBF sihfr224.pdf
IRFR224PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1248 Stücke - Preis und Lieferfrist anzeigen
IRLR120PBF IRLR(U)120,%20SiHLR(U)120.pdf
IRLR120PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRLZ24PBF sihlz24.pdf
IRLZ24PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
auf Bestellung 760 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.32 EUR
10+ 3.87 EUR
100+ 3.02 EUR
500+ 2.49 EUR
SI7172DP-T1-GE3 si7172dp.pdf
SI7172DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4204 Stücke - Preis und Lieferfrist anzeigen
SI7172DP-T1-GE3 si7172dp.pdf
SI7172DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 203 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4001 Stücke - Preis und Lieferfrist anzeigen
SI7172DP-T1-GE3 si7172dp.pdf
SI7172DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 25A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 100V
Power - Max: 96W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 4001 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 203 Stücke - Preis und Lieferfrist anzeigen
SIR470DP-T1-GE3 sir470dp.pdf
SIR470DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8507 Stücke - Preis und Lieferfrist anzeigen
SIR470DP-T1-GE3 sir470dp.pdf
SIR470DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR470
auf Bestellung 6649 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7858 Stücke - Preis und Lieferfrist anzeigen
SIR890DP-T1-GE3 sir890dp.pdf
SIR890DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2747pF @ 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR890
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798625 Stücke - Preis und Lieferfrist anzeigen
SIHU5N50D-E3 sihu5n50d.pdf
SIHU5N50D-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO251AA
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR804DP-T1-GE3 sir804dp.pdf
SIR804DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Base Part Number: SIR804
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7164DP-T1-GE3 si7164dp.pdf
SI7164DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22551 Stücke - Preis und Lieferfrist anzeigen
SI7164DP-T1-GE3 si7164dp.pdf
SI7164DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 726 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21825 Stücke - Preis und Lieferfrist anzeigen
4+ 7.41 EUR
10+ 6.65 EUR
100+ 5.45 EUR
500+ 4.64 EUR
IRFU210PBF sihfr210.pdf
IRFU210PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1696 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1625 Stücke - Preis und Lieferfrist anzeigen
SI7788DP-T1-GE3 si7788dp.pdf
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19678 Stücke - Preis und Lieferfrist anzeigen
SI7788DP-T1-GE3 si7788dp.pdf
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6870 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15808 Stücke - Preis und Lieferfrist anzeigen
SI7788DP-T1-GE3 si7788dp.pdf
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6870 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15808 Stücke - Preis und Lieferfrist anzeigen
SI7738DP-T1-GE3 si7738dp.pdf
SI7738DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10564 Stücke - Preis und Lieferfrist anzeigen
SI7738DP-T1-GE3 si7738dp.pdf
SI7738DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Base Part Number: SI7738
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3412 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10152 Stücke - Preis und Lieferfrist anzeigen
IRFR9310PBF sihfr931.pdf
IRFR9310PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 640 Stücke - Preis und Lieferfrist anzeigen
IRF730PBF 91047.pdf
IRF730PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 262 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3880 Stücke - Preis und Lieferfrist anzeigen
7+ 3.98 EUR
10+ 3.59 EUR
100+ 2.88 EUR
SI7113DN-T1-E3 si7113dn.pdf
SI7113DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2708 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13529 Stücke - Preis und Lieferfrist anzeigen
SI7113DN-T1-E3 si7113dn.pdf
SI7113DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2708 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13529 Stücke - Preis und Lieferfrist anzeigen
SI7430DP-T1-GE3 si7430dp.pdf
SI7430DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2859 Stücke - Preis und Lieferfrist anzeigen
SI7194DP-T1-GE3 si7194dp.pdf
SI7194DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 83W
Input Capacitance (Ciss) (Max) @ Vds: 6590pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4890DY-T1-E3 si4890dy.pdf
SI4890DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs (Max): ±25V
Power Dissipation (Max): 2.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4890
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 167356 Stücke - Preis und Lieferfrist anzeigen
SI4890DY-T1-E3 70855.pdf
SI4890DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.5W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Drain to Source Voltage (Vdss): 30V
auf Bestellung 11338 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 156018 Stücke - Preis und Lieferfrist anzeigen
SI7136DP-T1-E3 73601.pdf
SI7136DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 270 Stücke - Preis und Lieferfrist anzeigen
SI7136DP-T1-E3 73601.pdf
SI7136DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Power - Max: 39W
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 135 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 135 Stücke - Preis und Lieferfrist anzeigen
SI7136DP-T1-E3 73601.pdf
SI7136DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W
auf Bestellung 135 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 135 Stücke - Preis und Lieferfrist anzeigen
SIE822DF-T1-GE3 sie822df.pdf
SIE822DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10POLARPAK
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3668 Stücke - Preis und Lieferfrist anzeigen
SIE822DF-T1-GE3 sie822df.pdf
SIE822DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10POLARPAK
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIE822
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Vgs (Max): ±20V
auf Bestellung 3473 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3195 Stücke - Preis und Lieferfrist anzeigen
SIE822DF-T1-GE3 sie822df.pdf
SIE822DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A POLARPAK
Supplier Device Package: 10-PolarPAK® (S)
Package / Case: 10-PolarPAK® (S)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 18.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 195 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6473 Stücke - Preis und Lieferfrist anzeigen
SUD50P04-15-E3 71176.pdf
SUD50P04-15-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL530PBF IRL530,SiHL530.pdf
IRL530PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
auf Bestellung 597 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.29 EUR
10+ 3.83 EUR
100+ 2.99 EUR
500+ 2.47 EUR
SUM27N20-78-E3 sum27n20.pdf
SUM27N20-78-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 27A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.75W
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 200V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7450DP-T1-GE3 si7450dp.pdf
SI7450DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19153 Stücke - Preis und Lieferfrist anzeigen
SI4888DY-T1-E3 71336.pdf
SI4888DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
SI7790DP-T1-GE3 si7790dp.pdf
SI7790DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7790
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1382 Stücke - Preis und Lieferfrist anzeigen
SI7790DP-T1-GE3 si7790dp.pdf
SI7790DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7790
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Cut Tape (CT)
auf Bestellung 691 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 691 Stücke - Preis und Lieferfrist anzeigen
SI7460DP-T1-E3 si7460dp.pdf
SI7460DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 45321 Stücke - Preis und Lieferfrist anzeigen
SI7459DP-T1-GE3 si7459dp.pdf
SI7459DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFUC20PBF техническая информация sihfrc20.pdf
IRFUC20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.08 EUR
10+ 3.65 EUR
IRFU9014PBF sihfr901.pdf
IRFU9014PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 1762 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.95 EUR
10+ 3.53 EUR
100+ 2.75 EUR
500+ 2.27 EUR
1000+ 1.79 EUR
SUM90N08-6M2P-E3 sum90n08.pdf
SUM90N08-6M2P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Drain to Source Voltage (Vdss): 75V
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4620pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU220PBF sihfr220.pdf
IRFU220PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFU1N60APBF sihfr1n6.pdf
IRFU1N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A TO251AA
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF644PBF sihf644.pdf
IRF644PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 632 Stücke - Preis und Lieferfrist anzeigen
SI7658ADP-T1-GE3 si7658adp.pdf
SI7658ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3910 Stücke - Preis und Lieferfrist anzeigen
SI7658ADP-T1-GE3 si7658adp.pdf
SI7658ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
auf Bestellung 395 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3515 Stücke - Preis und Lieferfrist anzeigen
SI7802DN-T1-E3 si7802dn.pdf
SI7802DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Drain to Source Voltage (Vdss): 250V
Power - Max: 1.5W
Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N10-18P-GE3 sud50n10.pdf
SUD50N10-18P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 8.2A/50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 136.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4108DY-T1-GE3 si4108dy.pdf
SI4108DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 20.5A 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 38V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 20.5A (Tc)
Drain to Source Voltage (Vdss): 75V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
IRFU214PBF sihfr214.pdf
IRFU214PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A TO251AA
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1978 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
8+ 3.59 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.07 EUR
1000+ 1.63 EUR
IRFD010PBF IRFD010,%20012.pdf
IRFD010PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 1.7A 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 860mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFD020PBF sihfd020.pdf
IRFD020PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 2.4A 4DIP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6948 Stücke - Preis und Lieferfrist anzeigen
IRFR9214PBF sihfr921.pdf
IRFR9214PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3152 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4 EUR
10+ 3.6 EUR
100+ 2.9 EUR
500+ 2.38 EUR
1000+ 2.04 EUR
SI4838DY-T1-E3 71359.pdf
SI4838DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
auf Bestellung 4313 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 97250 Stücke - Preis und Lieferfrist anzeigen
SI4838DY-T1-E3 71359.pdf
SI4838DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Base Part Number: SI4838
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4331 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 97232 Stücke - Preis und Lieferfrist anzeigen
SI4838DY-T1-E3 71359.pdf
SI4838DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8-SOIC
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
Power - Max: 1.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
auf Bestellung 2839 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 98724 Stücke - Preis und Lieferfrist anzeigen
SI7483ADP-T1-E3 73025.pdf
SI7483ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12578 Stücke - Preis und Lieferfrist anzeigen
IRF9530PBF sihf9530.pdf
IRF9530PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Packaging: Tube
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1914 Stücke - Preis und Lieferfrist anzeigen
IRFBG20PBF sihbg20.pdf
IRFBG20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 1.4A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 410 Stücke - Preis und Lieferfrist anzeigen
IRF634PBF irf634.pdf
IRF634PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9220PBF sihfr922.pdf
IRFR9220PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM55P06-19L-E3 sum55p06.pdf
SUM55P06-19L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 55A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4967 Stücke - Preis und Lieferfrist anzeigen
IRF720SPBF sihf720s.pdf
IRF720SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.3A D2PAK
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59800 Stücke - Preis und Lieferfrist anzeigen
IRFD224PBF sihfd224.pdf
IRFD224PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 630MA 4DIP
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7192DP-T1-GE3 si7192dp.pdf
SI7192DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7192
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 34503 Stücke - Preis und Lieferfrist anzeigen
Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]