Die Produkte vishay siliconix

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SI5933DC-T1-E3 SI5933DC-T1-E3 si5933dc.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 2.7A 1206-8
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SI5935DC-T1-E3 SI5935DC-T1-E3 si5935dc.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 3A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
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SI5938DU-T1-E3 SI5938DU-T1-E3 73463.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 6A 8PWRPAK
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
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SI5943DU-T1-E3 SI5943DU-T1-E3 73669.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 6A 8PWRPAK
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
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SI5944DU-T1-E3 SI5944DU-T1-E3 73683.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 6A 8PWRPAK
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
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SI5947DU-T1-E3 SI5947DU-T1-E3 73695.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 6A 8PWRPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Supplier Device Package: PowerPAK® ChipFet Dual
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: PowerPAK® ChipFET™ Dual
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SI6963BDQ-T1-E3 SI6963BDQ-T1-E3 72772.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6963
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SI6969BDQ-T1-E3 SI6969BDQ-T1-E3 72017.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4A 8TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6969
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SI6983DQ-T1-E3 SI6983DQ-T1-E3 72367.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7983DP-T1-E3 SI7983DP-T1-E3 72637.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 7.7A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SI7983
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8904EDB-T2-E1 SI8904EDB-T2-E1 72948.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 3.8A 6-MFP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT®CSP
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Base Part Number: SI8904
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9926BDY-T1-E3 SI9926BDY-T1-E3 si9926bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
FET Type: 2 N-Channel (Dual)
Power - Max: 1.14W
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9933BDY-T1-E3 SI9933BDY-T1-E3 72748.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 3.6A 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
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SIA911DJ-T1-E3 SIA911DJ-T1-E3 sia911dj.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.5A SC70-6
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
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SIA914DJ-T1-E3 SIA914DJ-T1-E3 sia914dj.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB911DK-T1-E3 sib911dk.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 2.6A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB911
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIF902EDZ-T1-E3 SIF902EDZ-T1-E3 72987.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 7A 6-POWERPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Supplier Device Package: PowerPAK® (2x5)
Base Part Number: SIF902
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SIF912EDZ-T1-E3 72952.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 7.4A 6-POWERPAK
Current - Continuous Drain (Id) @ 25°C: 7.4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Supplier Device Package: PowerPAK® (2x5)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V
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SI5519DU-T1-GE3 SI5519DU-T1-GE3 si5519du.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 6A CHIPFETs
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7948DP-T1-GE3 SI7948DP-T1-GE3 si7948dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA513DJ-T1-GE3 SIA513DJ-T1-GE3 sia513dj.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3 sia911ed.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.5A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 101 mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SIA913DJ-T1-GE3 SIA913DJ-T1-GE3 sia913dj.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
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SI4561DY-T1-GE3 SI4561DY-T1-GE3 69730.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 6.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W, 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1553DL-T1 SI1553DL-T1 SI1553DL.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V SC70-6
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Drain to Source Voltage (Vdss): 20V
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SI9945AEY-T1 SI9945AEY-T1 si9945ae.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 3.7A 8SOIC
FET Type: 2 N-Channel (Dual)
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
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SI4501ADY-T1-GE3 SI4501ADY-T1-GE3 si4501ad.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V/8V 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4501
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SI4992EY-T1-GE3 SI4992EY-T1-GE3 si4992ey.pdf Vishay Siliconix Description: MOSFET 2N-CH 75V 3.6A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 75V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI5511DC-T1-GE3 SI5511DC-T1-GE3 si5511dc.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 4A 1206-8
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 2.6W
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
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SI5920DC-T1-GE3 SI5920DC-T1-GE3 si5920dc.pdf Vishay Siliconix Description: MOSFET 2N-CH 8V 4A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
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SI1905BDH-T1-E3 SI1905BDH-T1-E3 si1905bd.pdf Vishay Siliconix Description: MOSFET 2P-CH 8V 0.63A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 357mW
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
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SI3529DV-T1-E3 SI3529DV-T1-E3 si3529dv.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3529DV-T1-GE3 SI3529DV-T1-GE3 si3529dv.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3905DV-T1-E3 SI3905DV-T1-E3 si3905dv.pdf Vishay Siliconix Description: MOSFET 2P-CH 8V 6-TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
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SI3905DV-T1-GE3 SI3905DV-T1-GE3 si3905dv.pdf Vishay Siliconix Description: MOSFET 2P-CH 8V 6-TSOP
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
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SI3909DV-T1-E3 SI3909DV-T1-E3 70968.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
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SI3909DV-T1-GE3 SI3909DV-T1-GE3 70968.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
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SI3983DV-T1-GE3 SI3983DV-T1-GE3 72316.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SI4230DY-T1-GE3 SI4230DY-T1-GE3 si4230dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI4310BDY-T1-E3 SI4310BDY-T1-E3 si4310bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 7.5A 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W, 1.47W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 14-SOIC
Part Status: Obsolete
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SI4561DY-T1-E3 SI4561DY-T1-E3 69730.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 6.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W, 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
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SI4565ADY-T1-GE3 SI4565ADY-T1-GE3 73880.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4818DY-T1-E3 SI4818DY-T1-E3 71122.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI4818DY-T1-GE3 SI4818DY-T1-GE3 71122.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
FET Type: 2 N-Channel (Dual)
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SI4830ADY-T1-GE3 SI4830ADY-T1-GE3 si4830ad.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
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SI4834BDY-T1-GE3 SI4834BDY-T1-GE3 72064.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4834
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SI4908DY-T1-GE3 SI4908DY-T1-GE3 73698.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 5A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.75W
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4908
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
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SI4940DY-T1-E3 SI4940DY-T1-E3 si4940dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 4.2A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI4940DY-T1-GE3 SI4940DY-T1-GE3 si4940dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 4.2A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 4.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI5933DC-T1-E3 si5933dc.pdf
SI5933DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 1206-8
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SI5935DC-T1-E3 si5935dc.pdf
SI5935DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
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SI5938DU-T1-E3 73463.pdf
SI5938DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 8PWRPAK
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
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SI5943DU-T1-E3 73669.pdf
SI5943DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6A 8PWRPAK
Rds On (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
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SI5944DU-T1-E3 73683.pdf
SI5944DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A 8PWRPAK
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10W
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5947DU-T1-E3 73695.pdf
SI5947DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A 8PWRPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
Supplier Device Package: PowerPAK® ChipFet Dual
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: PowerPAK® ChipFET™ Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6963BDQ-T1-E3 72772.pdf
SI6963BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6963
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6969BDQ-T1-E3 72017.pdf
SI6969BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4A 8TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: SI6969
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6983DQ-T1-E3 72367.pdf
SI6983DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 400µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7983DP-T1-E3 72637.pdf
SI7983DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 7.7A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SI7983
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8904EDB-T2-E1 72948.pdf
SI8904EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.8A 6-MFP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-MICRO FOOT®CSP
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Base Part Number: SI8904
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9926BDY-T1-E3 si9926bd.pdf
SI9926BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
FET Type: 2 N-Channel (Dual)
Power - Max: 1.14W
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 27080 Stücke - Preis und Lieferfrist anzeigen
SI9933BDY-T1-E3 72748.pdf
SI9933BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.6A 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
SIA911DJ-T1-E3 sia911dj.pdf
SIA911DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 94mOhm @ 2.8A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 150000 Stücke - Preis und Lieferfrist anzeigen
SIA914DJ-T1-E3 sia914dj.pdf
SIA914DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB911DK-T1-E3 sib911dk.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB911
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIF902EDZ-T1-E3 72987.pdf
SIF902EDZ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 7A 6-POWERPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 2x5
Supplier Device Package: PowerPAK® (2x5)
Base Part Number: SIF902
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11865 Stücke - Preis und Lieferfrist anzeigen
SIF912EDZ-T1-E3 72952.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.4A 6-POWERPAK
Current - Continuous Drain (Id) @ 25°C: 7.4A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Supplier Device Package: PowerPAK® (2x5)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5519DU-T1-GE3 si5519du.pdf
SI5519DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFETs
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10.4W
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7948DP-T1-GE3 si7948dp.pdf
SI7948DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA513DJ-T1-GE3 sia513dj.pdf
SIA513DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA911EDJ-T1-GE3 sia911ed.pdf
SIA911EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 101 mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
SIA913DJ-T1-GE3 sia913dj.pdf
SIA913DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2700 Stücke - Preis und Lieferfrist anzeigen
SI4561DY-T1-GE3 69730.pdf
SI4561DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W, 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1553DL-T1 SI1553DL.pdf
SI1553DL-T1
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9945AEY-T1 si9945ae.pdf
SI9945AEY-T1
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
FET Type: 2 N-Channel (Dual)
Power - Max: 2.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4501ADY-T1-GE3 si4501ad.pdf
SI4501ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4501
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4992EY-T1-GE3 si4992ey.pdf
SI4992EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 75V 3.6A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 75V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5511DC-T1-GE3 si5511dc.pdf
SI5511DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A 1206-8
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 2.6W
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5920DC-T1-GE3 si5920dc.pdf
SI5920DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 4A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1905BDH-T1-E3 si1905bd.pdf
SI1905BDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.63A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 357mW
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 542 mOhm @ 580mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3529DV-T1-E3 si3529dv.pdf
SI3529DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3529DV-T1-GE3 si3529dv.pdf
SI3529DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 2.5A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3905DV-T1-E3 si3905dv.pdf
SI3905DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 6-TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3905DV-T1-GE3 si3905dv.pdf
SI3905DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 6-TSOP
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.5A, 4.5V
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3909DV-T1-E3 70968.pdf
SI3909DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
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SI3909DV-T1-GE3 70968.pdf
SI3909DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3983DV-T1-GE3 72316.pdf
SI3983DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4230DY-T1-GE3 si4230dy.pdf
SI4230DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4310BDY-T1-E3 si4310bd.pdf
SI4310BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.5A 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W, 1.47W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4561DY-T1-E3 69730.pdf
SI4561DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W, 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4565ADY-T1-GE3 73880.pdf
SI4565ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4818DY-T1-E3 71122.pdf
SI4818DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4818DY-T1-GE3 71122.pdf
SI4818DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4830ADY-T1-GE3 si4830ad.pdf
SI4830ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4834BDY-T1-GE3 72064.pdf
SI4834BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4834
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4908DY-T1-GE3 73698.pdf
SI4908DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.75W
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4908
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4940DY-T1-E3 si4940dy.pdf
SI4940DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 4.2A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4940DY-T1-GE3 si4940dy.pdf
SI4940DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 4.2A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.7A, 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 4.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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