Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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SI7852ADP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SI7852 |
auf Bestellung 8249 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9878 Stücke - Preis und Lieferfrist anzeigen
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SI4465ADY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 8SOIC Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11860 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 8V 8SOIC Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 255 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11860 Stücke - Preis und Lieferfrist anzeigen
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IRLR014PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 7.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: IRLR014 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 25W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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IRFD9110PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 700MA 4DIP Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 4-HVMDIP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: 4-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 247 Stücke - Preis und Lieferfrist anzeigen
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SI4413ADY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 10.5A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1589 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 10.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1589 Stücke - Preis und Lieferfrist anzeigen
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SIHB22N60S-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 22A D2PAK Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2.81 nF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7846DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 4A PPAK SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Technology: MOSFET (Metal Oxide) Part Status: Active FET Type: N-Channel Base Part Number: SI7846 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V |
auf Bestellung 14672 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 26049 Stücke - Preis und Lieferfrist anzeigen
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DG636EEQ-T1-GE4 |
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Vishay Siliconix |
Description: IC SWITCH DUAL SPDT 14TSSOP Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Crosstalk: -62dB @ 10MHz Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF Charge Injection: -0.33pC -3db Bandwidth: 700MHz Switch Time (Ton, Toff) (Max): 56ns, 61ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Channel-to-Channel Matching (ΔRon): 2Ohm On-State Resistance (Max): 96Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI2377EDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 4.4A SOT-23 Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI2377 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc) Vgs (Max): ±8V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) |
auf Bestellung 77954 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 114498 Stücke - Preis und Lieferfrist anzeigen
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SI2304DDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 3.3A SOT23 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 11795 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 500 Stücke - Preis und Lieferfrist anzeigen
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SI2302DDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHAN 20V SOT23 Base Part Number: SI2302 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 710mW (Ta) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 31170 Stücke Lieferzeit 21-28 Tag (e) |
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SIR164DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 50A POWERPAKSO-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V Power Dissipation (Max): 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SQD50N10-8M9L_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 50A TO252AA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1016X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V SOT563F FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 58808 Stücke - Preis und Lieferfrist anzeigen
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SI1023X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.37A SOT563F Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 370mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI1024X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.485A SOT563F Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 485mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10658 Stücke - Preis und Lieferfrist anzeigen
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SI1025X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 60V 0.19A SOT563F Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 190mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 666018 Stücke - Preis und Lieferfrist anzeigen
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SI1026X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 0.305A SOT563F Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 305mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25367 Stücke - Preis und Lieferfrist anzeigen
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SI1029X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 60V SOT563F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7048 Stücke - Preis und Lieferfrist anzeigen
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SI1033X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.145A SOT563F Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 145mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 108018 Stücke - Preis und Lieferfrist anzeigen
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SI1034X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.18A SOT563F Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 180mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5438 Stücke - Preis und Lieferfrist anzeigen
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SI1035X-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V SOT563F FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 54000 Stücke - Preis und Lieferfrist anzeigen
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SI1913EDH-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 0.88A SC70-6 Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 100µA Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 880mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 570mW |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI3948DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.15W Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 67868 Stücke - Preis und Lieferfrist anzeigen
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SI3951DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.7A 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2W Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI3981DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 1.6A 6-TSOP Vgs(th) (Max) @ Id: 1.1V @ 250µA Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 800mW Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2284 Stücke - Preis und Lieferfrist anzeigen
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SI3983DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.1A 6-TSOP Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.1A |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 123800 Stücke - Preis und Lieferfrist anzeigen
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SI4340DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 7.3A 14SO Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.14W, 1.43W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.3A, 9.9A Rds On (Max) @ Id, Vgs: 12mOhm @ 9.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 14-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4501ADY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 8SOIC Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A Drain to Source Voltage (Vdss): 30V, 8V FET Feature: Logic Level Gate FET Type: N and P-Channel, Common Drain Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI4501 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 69489 Stücke - Preis und Lieferfrist anzeigen
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SI4565ADY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 40V 6.6A 8-SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W FET Type: N and P-Channel Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4830ADY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.7A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 248375 Stücke - Preis und Lieferfrist anzeigen
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SI4834BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.7A 8-SOIC Base Part Number: SI4834 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 73299 Stücke - Preis und Lieferfrist anzeigen
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SI4908DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Power - Max: 2.75W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 145500 Stücke - Preis und Lieferfrist anzeigen
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SI4914DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.5A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Power - Max: 1.1W, 1.16W Operating Temperature: -55°C ~ 150°C (TJ) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 211228 Stücke - Preis und Lieferfrist anzeigen
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SI4941EDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 10A 8-SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V Current - Continuous Drain (Id) @ 25°C: 10A Drain to Source Voltage (Vdss): 30V FET Type: 2 P-Channel (Dual) Power - Max: 3.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4972DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 10.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W, 2.5W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 97862 Stücke - Preis und Lieferfrist anzeigen
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SI4974DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6A 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Part Status: Obsolete Supplier Device Package: 8-SOIC FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 185020 Stücke - Preis und Lieferfrist anzeigen
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SI4992EY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 75V 3.6A 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A Drain to Source Voltage (Vdss): 75V FET Type: 2 N-Channel (Dual) Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87520 Stücke - Preis und Lieferfrist anzeigen
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SI5511DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 4A 1206-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W, 2.6W Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5517DU-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6A CHIPFET Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 8.3W Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI5920DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 8V 4A 1206-8 Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 8V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.12W Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7600 Stücke - Preis und Lieferfrist anzeigen
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SI5933DC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.7A 1206-8 FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
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| SI7852ADP-T1-GE3 | |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7852
auf Bestellung 8249 Stücke Description: MOSFET N-CH 80V 30A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7852
Lieferzeit 21-28 Tag (e)
auf Bestellung 9878 Stücke - Preis und Lieferfrist anzeigen
| SI4465ADY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 8SOIC
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 12115 Stücke - Preis und Lieferfrist anzeigen
| SI4465ADY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 255 Stücke Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Lieferzeit 21-28 Tag (e)
auf Bestellung 11860 Stücke - Preis und Lieferfrist anzeigen
| IRLR014PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: IRLR014
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: IRLR014
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
| IRFD9110PBF |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 700MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 700MA 4DIP
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 247 Stücke - Preis und Lieferfrist anzeigen
| SI4413ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.5A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 10.5A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1590 Stücke - Preis und Lieferfrist anzeigen
| SI4413ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.5A 8-SOIC
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
auf Bestellung 1 Stücke Description: MOSFET P-CH 30V 10.5A 8-SOIC
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1589 Stücke - Preis und Lieferfrist anzeigen
| SIHB22N60S-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A D2PAK
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2.81 nF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 22A D2PAK
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2.81 nF @ 25 V
| SI7846DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 4A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Base Part Number: SI7846
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
auf Bestellung 14672 Stücke Description: MOSFET N-CH 150V 4A PPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Base Part Number: SI7846
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 26049 Stücke - Preis und Lieferfrist anzeigen
| DG636EEQ-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 14TSSOP
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -62dB @ 10MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Charge Injection: -0.33pC
-3db Bandwidth: 700MHz
Switch Time (Ton, Toff) (Max): 56ns, 61ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 96Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH DUAL SPDT 14TSSOP
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -62dB @ 10MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Charge Injection: -0.33pC
-3db Bandwidth: 700MHz
Switch Time (Ton, Toff) (Max): 56ns, 61ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 96Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
| SI2377EDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A SOT-23
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2377
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
auf Bestellung 77954 Stücke Description: MOSFET P-CH 20V 4.4A SOT-23
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2377
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 114498 Stücke - Preis und Lieferfrist anzeigen
| SI2304DDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.3A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 11795 Stücke Description: MOSFET N-CH 30V 3.3A SOT23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 3.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 500 Stücke - Preis und Lieferfrist anzeigen
| SI2302DDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 20V SOT23
Base Part Number: SI2302
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 31170 Stücke Description: MOSFET N-CHAN 20V SOT23
Base Part Number: SI2302
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 710mW (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SIR164DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A POWERPAKSO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 50A POWERPAKSO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 15V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
| SQD50N10-8M9L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 50A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
| SI1016X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SOT563F
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V SOT563F
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Drain to Source Voltage (Vdss): 20V
auf Bestellung 58808 Stücke - Preis und Lieferfrist anzeigen
| SI1023X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SOT563F
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 0.37A SOT563F
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
| SI1024X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SOT563F
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 0.485A SOT563F
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
auf Bestellung 10658 Stücke - Preis und Lieferfrist anzeigen
| SI1025X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SOT563F
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 60V 0.19A SOT563F
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
auf Bestellung 666018 Stücke - Preis und Lieferfrist anzeigen
| SI1026X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SOT563F
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 0.305A SOT563F
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 25367 Stücke - Preis und Lieferfrist anzeigen
| SI1029X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V SOT563F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 60V SOT563F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
auf Bestellung 7048 Stücke - Preis und Lieferfrist anzeigen
| SI1033X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.145A SOT563F
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 0.145A SOT563F
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
auf Bestellung 108018 Stücke - Preis und Lieferfrist anzeigen
| SI1034X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SOT563F
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 0.18A SOT563F
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
auf Bestellung 5438 Stücke - Preis und Lieferfrist anzeigen
| SI1035X-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SOT563F
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V SOT563F
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA, 145mA
Drain to Source Voltage (Vdss): 20V
auf Bestellung 54000 Stücke - Preis und Lieferfrist anzeigen
| SI1913EDH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.88A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 0.88A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA
Rds On (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 880mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI3948DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.15W
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 67868 Stücke - Preis und Lieferfrist anzeigen
| SI3951DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 2.7A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI3981DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.6A 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 1.6A 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 800mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
auf Bestellung 2284 Stücke - Preis und Lieferfrist anzeigen
| SI3983DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 2.1A 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
auf Bestellung 123800 Stücke - Preis und Lieferfrist anzeigen
| SI4340DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 7.3A 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W, 1.43W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.3A, 9.9A
Rds On (Max) @ Id, Vgs: 12mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 7.3A 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W, 1.43W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.3A, 9.9A
Rds On (Max) @ Id, Vgs: 12mOhm @ 9.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 14-SOIC
Part Status: Obsolete
| SI4501ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V/8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A
Drain to Source Voltage (Vdss): 30V, 8V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4501
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
auf Bestellung 69489 Stücke - Preis und Lieferfrist anzeigen
| SI4565ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 40V 6.6A 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
| SI4830ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.7A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
auf Bestellung 248375 Stücke - Preis und Lieferfrist anzeigen
| SI4834BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Base Part Number: SI4834
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.7A 8-SOIC
Base Part Number: SI4834
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 73299 Stücke - Preis und Lieferfrist anzeigen
| SI4908DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.75W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 5A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.75W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
auf Bestellung 145500 Stücke - Preis und Lieferfrist anzeigen
| SI4914DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.5A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1.1W, 1.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 5.5A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 5.5A, 5.7A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 1.1W, 1.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 211228 Stücke - Preis und Lieferfrist anzeigen
| SI4941EDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 10A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 3.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 10A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 3.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| SI4972DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 2.5W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 2.5W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A, 7.2A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
auf Bestellung 97862 Stücke - Preis und Lieferfrist anzeigen
| SI4974DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 6A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Part Status: Obsolete
Supplier Device Package: 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 185020 Stücke - Preis und Lieferfrist anzeigen
| SI4992EY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 75V 3.6A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 75V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 75V 3.6A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 75V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
auf Bestellung 87520 Stücke - Preis und Lieferfrist anzeigen
| SI5511DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 2.6W
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 4A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 2.6W
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
| SI5517DU-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 6A CHIPFET
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
| SI5920DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 4A 1206-8
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 8V 4A 1206-8
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 7600 Stücke - Preis und Lieferfrist anzeigen
| SI5933DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 1206-8
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 20V 2.7A 1206-8
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Drain to Source Voltage (Vdss): 20V
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
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