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SI3459DV-T1-E3 SI3459DV-T1-E3 Vishay Siliconix Description: MOSFET P-CH 60V 2.2A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SI3460BDV-T1-E3 SI3460BDV-T1-E3 Vishay Siliconix si3460bd.pdf Description: MOSFET N-CH 20V 8A 6TSOP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
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SI3465DV-T1-E3 SI3465DV-T1-E3 Vishay Siliconix 72787.pdf Description: MOSFET P-CH 20V 3A 6-TSOP
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SI3469DV-T1-E3 SI3469DV-T1-E3 Vishay Siliconix si3469dv.pdf Description: MOSFET P-CH 20V 5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SI3473DV-T1-E3 SI3473DV-T1-E3 Vishay Siliconix 71937.pdf Description: MOSFET P-CH 12V 5.9A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SI3481DV-T1-E3 SI3481DV-T1-E3 Vishay Siliconix 72105.pdf Description: MOSFET P-CH 30V 4A 6-TSOP
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SI3483DV-T1-E3 SI3483DV-T1-E3 Vishay Siliconix 72078.pdf Description: MOSFET P-CH 30V 4.7A 6-TSOP
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SI3493BDV-T1-E3 SI3493BDV-T1-E3 Vishay Siliconix si3493bdv.pdf Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
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SI3495DV-T1-E3 SI3495DV-T1-E3 Vishay Siliconix si3495dv.pdf Description: MOSFET P-CH 20V 5.3A 6-TSOP
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SI3499DV-T1-E3 SI3499DV-T1-E3 Vishay Siliconix si3499dv.pdf Description: MOSFET P-CH 8V 5.3A 6-TSOP
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SI3552DV-T1-E3 SI3552DV-T1-E3 Vishay Siliconix si3552dv.pdf Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
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SI3585DV-T1-E3 SI3585DV-T1-E3 Vishay Siliconix Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
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SI3586DV-T1-E3 SI3586DV-T1-E3 Vishay Siliconix si3586dv.pdf Description: MOSFET N/P-CH 20V 2.9A 6TSOP
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
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SI3588DV-T1-E3 SI3588DV-T1-E3 Vishay Siliconix Description: MOSFET N/P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW, 83mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SI3590DV-T1-E3 SI3590DV-T1-E3 Vishay Siliconix si3590dv.pdf Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
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SI3812DV-T1-E3 SI3812DV-T1-E3 Vishay Siliconix Description: MOSFET N-CH 20V 2A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 830mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SI3861BDV-T1-E3 SI3861BDV-T1-E3 Vishay Siliconix si3861bd.pdf Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
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SI3865BDV-T1-E3 SI3865BDV-T1-E3 Vishay Siliconix 72848.pdf Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.9A
Voltage - Load: 1.8V ~ 8V
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
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SI3867DV-T1-E3 SI3867DV-T1-E3 Vishay Siliconix 72608.pdf Description: MOSFET P-CH 20V 3.9A 6-TSOP
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SI3900DV-T1-E3 SI3900DV-T1-E3 Vishay Siliconix si3900dv.pdf Description: MOSFET 2N-CH 20V 2A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SI3911DV-T1-E3 SI3911DV-T1-E3 Vishay Siliconix 71380.pdf Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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SI3951DV-T1-E3 SI3951DV-T1-E3 Vishay Siliconix si3951dv.pdf Description: MOSFET 2P-CH 20V 2.7A 6-TSOP
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SI3981DV-T1-E3 SI3981DV-T1-E3 Vishay Siliconix 72502.pdf Description: MOSFET 2P-CH 20V 1.6A 6-TSOP
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SI3983DV-T1-E3 SI3983DV-T1-E3 Vishay Siliconix 72316.pdf Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
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SI3993DV-T1-E3 SI3993DV-T1-E3 Vishay Siliconix 72320.pdf Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
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SI4322DY-T1-E3 SI4322DY-T1-E3 Vishay Siliconix 73860.pdf Description: MOSFET N-CH 30V 18A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 15 V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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SI4330DY-T1-E3 SI4330DY-T1-E3 Vishay Siliconix si4330dy.pdf Description: MOSFET 2N-CH 30V 6.6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI4336DY-T1-E3 SI4336DY-T1-E3 Vishay Siliconix Si4336DY.pdf Description: MOSFET N-CH 30V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
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SI4340DY-T1-E3 SI4340DY-T1-E3 Vishay Siliconix 72376723.pdf Description: MOSFET 2N-CH 20V 7.3A 14SO
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SI4346DY-T1-E3 SI4346DY-T1-E3 Vishay Siliconix si4346dy.pdf Description: MOSFET N-CH 30V 5.9A 8SO
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SI4348DY-T1-E3 SI4348DY-T1-E3 Vishay Siliconix si4348dy.pdf Description: MOSFET N-CH 30V 8A 8-SOIC
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SI4368DY-T1-E3 SI4368DY-T1-E3 Vishay Siliconix si4368dy.pdf Description: MOSFET N-CH 30V 17A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Cut Tape (CT)
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SI4378DY-T1-E3 SI4378DY-T1-E3 Vishay Siliconix si4378dy.pdf Description: MOSFET N-CH 20V 19A 8-SOIC
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SI4384DY-T1-E3 SI4384DY-T1-E3 Vishay Siliconix si4384dy.pdf Description: MOSFET N-CH 30V 10A 8-SOIC
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SI4386DY-T1-E3 SI4386DY-T1-E3 Vishay Siliconix si4386dy.pdf Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.47W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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100+1.86 EUR
500+1.48 EUR
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SI4388DY-T1-E3 SI4388DY-T1-E3 Vishay Siliconix si4388dy.pdf Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
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SI4396DY-T1-E3 SI4396DY-T1-E3 Vishay Siliconix 74252.pdf Description: MOSFET N-CH 30V 16A 8-SOIC
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SI4398DY-T1-E3 SI4398DY-T1-E3 Vishay Siliconix si4398dy.pdf Description: MOSFET N-CH 20V 19A 8-SOIC
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SI4401BDY-T1-E3 SI4401BDY-T1-E3 Vishay Siliconix si4401bd.pdf Description: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Si4403BDY-T1-E3 Si4403BDY-T1-E3 Vishay Siliconix si4403bd.pdf Description: MOSFET P-CH 20V 7.3A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 350µA
Power Dissipation (Max): 1.35W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Si4408DY-T1-E3 Si4408DY-T1-E3 Vishay Siliconix si4408dy.pdf Description: MOSFET N-CH 20V 14A 8SO
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
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SI4413ADY-T1-E3 SI4413ADY-T1-E3 Vishay Siliconix si4413ad.pdf Description: MOSFET P-CH 30V 10.5A 8SO
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
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SI4418DY-T1-E3 SI4418DY-T1-E3 Vishay Siliconix si4418dy.pdf Description: MOSFET N-CH 200V 2.3A 8-SOIC
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SI4420BDY-T1-E3 SI4420BDY-T1-E3 Vishay Siliconix si4420bd.pdf Description: MOSFET N-CH 30V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI4421DY-T1-E3 SI4421DY-T1-E3 Vishay Siliconix si4421dy.pdf Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SI4423DY-T1-E3 SI4423DY-T1-E3 Vishay Siliconix si4423dy.pdf Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 900mV @ 600µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI4425BDY-T1-E3 SI4425BDY-T1-E3 Vishay Siliconix si4425bd.pdf Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI4427BDY-T1-E3 SI4427BDY-T1-E3 Vishay Siliconix si4427bd.pdf Description: MOSFET P-CH 30V 9.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Si4430BDY-T1-E3 Si4430BDY-T1-E3 Vishay Siliconix si4430bd.pdf Description: MOSFET N-CH 30V 14A 8SO
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI4431BDY-T1-E3 SI4431BDY-T1-E3 Vishay Siliconix si4431bd.pdf Description: MOSFET P-CH 30V 5.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
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SI4434DY-T1-E3 SI4434DY-T1-E3 Vishay Siliconix si4434dy.pdf Description: MOSFET N-CH 250V 2.1A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SI4436DY-T1-E3 SI4436DY-T1-E3 Vishay Siliconix si4436dy.pdf Description: MOSFET N-CH 60V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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Si4442DY-T1-E3 Si4442DY-T1-E3 Vishay Siliconix si4442dy.pdf Description: MOSFET N-CH 30V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
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SI4446DY-T1-E3 SI4446DY-T1-E3 Vishay Siliconix Description: MOSFET N-CH 40V 3.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI4447DY-T1-E3 SI4447DY-T1-E3 Vishay Siliconix si4447dy.pdf Description: MOSFET P-CH 40V 3.3A 8SO
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
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Si4456DY-T1-E3 Si4456DY-T1-E3 Vishay Siliconix si4456dy.pdf Description: MOSFET N-CH 40V 33A 8SO
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
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SI4462DY-T1-E3 SI4462DY-T1-E3 Vishay Siliconix Description: MOSFET N-CH 200V 1.15A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI4463BDY-T1-E3 SI4463BDY-T1-E3 Vishay Siliconix si4463bd.pdf Description: MOSFET P-CH 20V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
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SI4464DY-T1-E3 SI4464DY-T1-E3 Vishay Siliconix si4464dy.pdf Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
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SI4465ADY-T1-E3 SI4465ADY-T1-E3 Vishay Siliconix si4465ad.pdf Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI3459DV-T1-E3
SI3459DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI3460BDV-T1-E3 si3460bd.pdf
SI3460BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
auf Bestellung 2904 Stücke:
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AnzahlPrivatkunde
9+2.51 EUR
14+1.58 EUR
100+1.05 EUR
500+0.82 EUR
1000+0.74 EUR
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SI3465DV-T1-E3 72787.pdf
SI3465DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3A 6-TSOP
Produkt ist nicht verfügbar
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SI3469DV-T1-E3 si3469dv.pdf
SI3469DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.14W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 11069 Stücke:
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11+2.01 EUR
17+1.26 EUR
100+0.82 EUR
500+0.63 EUR
1000+0.57 EUR
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SI3473DV-T1-E3 71937.pdf
SI3473DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI3481DV-T1-E3 72105.pdf
SI3481DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A 6-TSOP
Produkt ist nicht verfügbar
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SI3483DV-T1-E3 72078.pdf
SI3483DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 6-TSOP
Produkt ist nicht verfügbar
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SI3493BDV-T1-E3 si3493bdv.pdf
SI3493BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 10 V
auf Bestellung 10441 Stücke:
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8+2.62 EUR
13+1.65 EUR
100+1.09 EUR
500+0.86 EUR
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SI3495DV-T1-E3 si3495dv.pdf
SI3495DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
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SI3499DV-T1-E3 si3499dv.pdf
SI3499DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6-TSOP
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SI3552DV-T1-E3 si3552dv.pdf
SI3552DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.15W
Technology: MOSFET (Metal Oxide)
auf Bestellung 6588 Stücke:
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9+2.34 EUR
15+1.48 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
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SI3585DV-T1-E3
SI3585DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SI3586DV-T1-E3 si3586dv.pdf
SI3586DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.9A 6TSOP
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
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SI3588DV-T1-E3
SI3588DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW, 83mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI3590DV-T1-E3 si3590dv.pdf
SI3590DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
auf Bestellung 14340 Stücke:
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9+2.57 EUR
13+1.63 EUR
100+1.08 EUR
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SI3812DV-T1-E3
SI3812DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Power Dissipation (Max): 830mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI3861BDV-T1-E3 si3861bd.pdf
SI3861BDV-T1-E3
Hersteller: Vishay Siliconix
Description: IC LOAD SWITCH LVL SHIFT 6-TSOP
Produkt ist nicht verfügbar
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SI3865BDV-T1-E3 72848.pdf
SI3865BDV-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Supplier Device Package: 6-TSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 2.9A
Voltage - Load: 1.8V ~ 8V
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -55°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Produkt ist nicht verfügbar
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SI3867DV-T1-E3 72608.pdf
SI3867DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 6-TSOP
Produkt ist nicht verfügbar
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SI3900DV-T1-E3 si3900dv.pdf
SI3900DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 34004 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.24 EUR
15+1.39 EUR
100+0.92 EUR
500+0.71 EUR
1000+0.64 EUR
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SI3911DV-T1-E3 71380.pdf
SI3911DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.8A 6TSOP
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI3951DV-T1-E3 si3951dv.pdf
SI3951DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 6-TSOP
Produkt ist nicht verfügbar
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SI3981DV-T1-E3 72502.pdf
SI3981DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.6A 6-TSOP
Produkt ist nicht verfügbar
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SI3983DV-T1-E3 72316.pdf
SI3983DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 6-TSOP
Produkt ist nicht verfügbar
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SI3993DV-T1-E3 72320.pdf
SI3993DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
auf Bestellung 4237 Stücke:
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SI4322DY-T1-E3 73860.pdf
SI4322DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 15 V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SI4330DY-T1-E3 si4330dy.pdf
SI4330DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.6A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI4336DY-T1-E3 Si4336DY.pdf
SI4336DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Produkt ist nicht verfügbar
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SI4340DY-T1-E3 72376723.pdf
SI4340DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 7.3A 14SO
Produkt ist nicht verfügbar
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SI4346DY-T1-E3 si4346dy.pdf
SI4346DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.9A 8SO
Produkt ist nicht verfügbar
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SI4348DY-T1-E3 si4348dy.pdf
SI4348DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 8-SOIC
Produkt ist nicht verfügbar
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SI4368DY-T1-E3 si4368dy.pdf
SI4368DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke:
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SI4378DY-T1-E3 si4378dy.pdf
SI4378DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 289 Stücke:
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SI4384DY-T1-E3 si4384dy.pdf
SI4384DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10A 8-SOIC
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SI4386DY-T1-E3 si4386dy.pdf
SI4386DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.47W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI4388DY-T1-E3 si4388dy.pdf
SI4388DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
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SI4396DY-T1-E3 74252.pdf
SI4396DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 8-SOIC
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SI4398DY-T1-E3 si4398dy.pdf
SI4398DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
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SI4401BDY-T1-E3 si4401bd.pdf
SI4401BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Si4403BDY-T1-E3 si4403bd.pdf
Si4403BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 350µA
Power Dissipation (Max): 1.35W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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Si4408DY-T1-E3 si4408dy.pdf
Si4408DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 8SO
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 21A, 10V
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SI4413ADY-T1-E3 si4413ad.pdf
SI4413ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.5A 8SO
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
auf Bestellung 1475 Stücke:
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SI4418DY-T1-E3 si4418dy.pdf
SI4418DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.3A 8-SOIC
Produkt ist nicht verfügbar
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SI4420BDY-T1-E3 si4420bd.pdf
SI4420BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8SO
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3618 Stücke:
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SI4421DY-T1-E3 si4421dy.pdf
SI4421DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 8798 Stücke:
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SI4423DY-T1-E3 si4423dy.pdf
SI4423DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 900mV @ 600µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2383 Stücke:
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SI4425BDY-T1-E3 si4425bd.pdf
SI4425BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2716 Stücke:
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SI4427BDY-T1-E3 si4427bd.pdf
SI4427BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2508 Stücke:
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7+3.39 EUR
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Si4430BDY-T1-E3 si4430bd.pdf
Si4430BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1110 Stücke:
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5+4.63 EUR
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SI4431BDY-T1-E3 si4431bd.pdf
SI4431BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Produkt ist nicht verfügbar
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SI4434DY-T1-E3 si4434dy.pdf
SI4434DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 1655 Stücke:
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3+7.5 EUR
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SI4436DY-T1-E3 si4436dy.pdf
SI4436DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
auf Bestellung 1173 Stücke:
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8+2.62 EUR
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Si4442DY-T1-E3 si4442dy.pdf
Si4442DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 22A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
auf Bestellung 6379 Stücke:
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4+5.84 EUR
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100+3.97 EUR
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SI4446DY-T1-E3
SI4446DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SI4447DY-T1-E3 si4447dy.pdf
SI4447DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.3A 8SO
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 15V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 15V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 4930 Stücke:
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14+1.57 EUR
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Si4456DY-T1-E3 si4456dy.pdf
Si4456DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 33A 8SO
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5670 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
auf Bestellung 1772 Stücke:
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8+2.75 EUR
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SI4462DY-T1-E3
SI4462DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.15A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI4463BDY-T1-E3 si4463bd.pdf
SI4463BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
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SI4464DY-T1-E3 si4464dy.pdf
SI4464DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 13284 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
10+2.7 EUR
100+1.83 EUR
500+1.46 EUR
1000+1.34 EUR
Mindestbestellmenge: 5 Stücke
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SI4465ADY-T1-E3 si4465ad.pdf
SI4465ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V
Produkt ist nicht verfügbar
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