Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SUD50P04-08-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SIR166DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Base Part Number: SIR166 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 48W (Tc) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIR166 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 48W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key |
auf Bestellung 143 Stücke Lieferzeit 21-28 Tag (e) |
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SI7415DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 3.6A PPAK1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drain to Source Voltage (Vdss): 60V Base Part Number: SI7415 Package / Case: PowerPAK® 1212-8 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 60000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 43993 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 60V 3.6A PPAK1212-8 Base Part Number: SI7415 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 62902 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 43993 Stücke - Preis und Lieferfrist anzeigen
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SI4463BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 9.8A 8SO Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 41922 Stücke - Preis und Lieferfrist anzeigen
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SI7820DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A PPAK1212-8 Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Drain to Source Voltage (Vdss): 200V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
auf Bestellung 6745 Stücke Lieferzeit 21-28 Tag (e) |
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SI7820DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A PPAK1212-8 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 16732 Stücke - Preis und Lieferfrist anzeigen
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SIS426DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 35A 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1730 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 35A 1212-8 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount |
auf Bestellung 8245 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1730 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 35A 1212-8 Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 8245 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1730 Stücke - Preis und Lieferfrist anzeigen
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SI4430BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 14A 8SO Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI4430BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 14A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 76298 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 14A 8SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC |
auf Bestellung 2307 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 76298 Stücke - Preis und Lieferfrist anzeigen
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SI7386DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.8W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Base Part Number: SI7386 Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 15000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2135 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 Base Part Number: SI7386 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.8W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 15194 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2135 Stücke - Preis und Lieferfrist anzeigen
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SI7386DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5692 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 12A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V Power Dissipation (Max): 1.8W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount |
auf Bestellung 21 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5692 Stücke - Preis und Lieferfrist anzeigen
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SI7139DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 40A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 15V Power Dissipation (Max): 5W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SI7139 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5935 Stücke - Preis und Lieferfrist anzeigen
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SI8402DB-T1-E1 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 5.3A 4MICROFOOT Base Part Number: SI8402 Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-Microfoot Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 37mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
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SI8405DB-T1-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 3.6A 4MICROFOOT Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs (Max): ±8V Power Dissipation (Max): 1.47W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA Base Part Number: SI8405 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2770 Stücke - Preis und Lieferfrist anzeigen
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SI7423DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 7.4A PPAK1212-8 Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI7423 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) |
auf Bestellung 1469 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3958 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 7.4A PPAK1212-8 Base Part Number: SI7423 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V |
auf Bestellung 1469 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3958 Stücke - Preis und Lieferfrist anzeigen
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SIS892DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Base Part Number: SIS892 Package / Case: PowerPAK® 1212-8 Manufacturer: Vishay Siliconix Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4739 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIS892 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 3947 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4739 Stücke - Preis und Lieferfrist anzeigen
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SI8425DB-T1-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 4WLCSP Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 4-WLCSP (1.6x1.6) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET P-CH 20V MICROFOOT Supplier Device Package: 4-WLCSP (1.6x1.6) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 23 mOhm @ 2A, 4.5V Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 7115 Stücke Lieferzeit 21-28 Tag (e) |
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SI4896DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 80V 6.7A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4896 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 55772 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 80V 6.7A 8SO Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.56W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4896 |
auf Bestellung 74 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 55772 Stücke - Preis und Lieferfrist anzeigen
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SI6467BDQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 6.8A 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V Vgs(th) (Max) @ Id: 850mV @ 450µA Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
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SI4136DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 46A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4136 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11555 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 46A 8SO Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Manufacturer: Vishay Siliconix Base Part Number: SI4136 |
auf Bestellung 3844 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 11555 Stücke - Preis und Lieferfrist anzeigen
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SIR812DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V Power - Max: 104W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V Power - Max: 104W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 5903 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V Power - Max: 104W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 5903 Stücke Lieferzeit 21-28 Tag (e) |
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SI3460DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 5.1A 6TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.1W (Ta) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28027 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 5.1A 6TSOP Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 1mA (Min) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Supplier Device Package: 6-TSOP Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W |
auf Bestellung 748 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 28027 Stücke - Preis und Lieferfrist anzeigen
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SI4838BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 34A 8SO Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 12V 34A 8SO Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) |
auf Bestellung 148 Stücke Lieferzeit 21-28 Tag (e) |
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IRLL110PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 400 Stücke - Preis und Lieferfrist anzeigen
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IRF610PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 3.3A TO220AB Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6464 Stücke - Preis und Lieferfrist anzeigen
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IRFL110PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
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IRFL014PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 2.7A SOT223 Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1859 Stücke - Preis und Lieferfrist anzeigen
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SI4630DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 40A 8-SOIC Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4630 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA |
auf Bestellung 10000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 266629 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 25V 40A 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI4630 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V |
auf Bestellung 11109 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 266629 Stücke - Preis und Lieferfrist anzeigen
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SI4630DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 40A 8-SOIC Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 25V 40A 8-SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 1041 Stücke Lieferzeit 21-28 Tag (e) |
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SI7448DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 13.4A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V FET Type: MOSFET N-Channel, Metal Oxide Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta) Drain to Source Voltage (Vdss): 20V Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
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SI7454DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 5A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2476 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 5A PPAK SO-8 Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA |
auf Bestellung 152 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2476 Stücke - Preis und Lieferfrist anzeigen
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SI7818DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 2.2A 1212-8 Vgs (Max): ±20V Base Part Number: SI7818 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 150V 2.2A 1212-8 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI7818 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
auf Bestellung 13104 Stücke Lieferzeit 21-28 Tag (e) |
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SI7818DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 2.2A PPAK1212-8 FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI7818 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4682 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 150V 2.2A PPAK1212-8 Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Base Part Number: SI7818 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 |
auf Bestellung 2363 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4682 Stücke - Preis und Lieferfrist anzeigen
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SIR492DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 40A PPAK SO-8 Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 36W Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 12V 40A PPAK SO-8 Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 36W Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA |
auf Bestellung 13328 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 12V 40A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 36W Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 13328 Stücke Lieferzeit 21-28 Tag (e) |
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SI7120ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 6A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7120 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26474 Stücke - Preis und Lieferfrist anzeigen
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SI7623DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 35A 1212-8 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET P-CH 20V 35A 1212-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 382 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 35A 1212-8 Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V FET Type: MOSFET P-Channel, Metal Oxide Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V |
auf Bestellung 7945 Stücke Lieferzeit 21-28 Tag (e) |
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SI4190ADY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 18.4A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 50V Power Dissipation (Max): 3W (Ta), 6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4190 |
auf Bestellung 7500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 18.4A 8SO Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 50V Power Dissipation (Max): 3W (Ta), 6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4190 |
auf Bestellung 8414 Stücke Lieferzeit 21-28 Tag (e) |
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SUD50N03-06AP-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO252 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Power Dissipation (Max): 10W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 202015 Stücke - Preis und Lieferfrist anzeigen
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SI7107DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 9.8A 1212-8 FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 9.8A 1212-8 FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Power - Max: 1.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 |
auf Bestellung 1020 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
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SI7882DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 13A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drain to Source Voltage (Vdss): 12V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount FET Type: MOSFET N-Channel, Metal Oxide Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.9W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SIS890DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 30A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI4654DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 28.6A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.9W Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 25V 28.6A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc) Drain to Source Voltage (Vdss): 25V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.9W Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V FET Type: MOSFET N-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V |
auf Bestellung 4878 Stücke Lieferzeit 21-28 Tag (e) |
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SI5432DC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 6A 1206-8 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.3W Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 20V 6A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.3W Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 3048 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 6A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 6.3W Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 3048 Stücke Lieferzeit 21-28 Tag (e) |
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SI7110DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 13.5A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs (Max): ±20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7110 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28518 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 13.5A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs (Max): ±20V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SI7110 |
auf Bestellung 1196 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 28518 Stücke - Preis und Lieferfrist anzeigen
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SI4466DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 9.5A 8-SOIC Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 125687 Stücke - Preis und Lieferfrist anzeigen
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SIR414DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 40V 50A PPAK SO-8 Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 3 Stücke Lieferzeit 21-28 Tag (e) |
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SI7774DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4517 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 48W Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 4517 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4517 Stücke - Preis und Lieferfrist anzeigen
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| SUD50P04-08-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| SIR166DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Base Part Number: SIR166
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Base Part Number: SIR166
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
auf Bestellung 143 Stücke - Preis und Lieferfrist anzeigen
| SIR166DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR166
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
auf Bestellung 143 Stücke Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR166
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Lieferzeit 21-28 Tag (e)
| SI7415DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SI7415
Package / Case: PowerPAK® 1212-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 60000 Stücke Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SI7415
Package / Case: PowerPAK® 1212-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 106895 Stücke - Preis und Lieferfrist anzeigen
| SI7415DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Base Part Number: SI7415
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 62902 Stücke Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Base Part Number: SI7415
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 103993 Stücke - Preis und Lieferfrist anzeigen
| SI4463BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9.8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 41922 Stücke - Preis und Lieferfrist anzeigen
| SI7820DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 1.7A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
auf Bestellung 6745 Stücke - Preis und Lieferfrist anzeigen
| SI7820DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
auf Bestellung 6745 Stücke Description: MOSFET N-CH 200V 1.7A 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Lieferzeit 21-28 Tag (e)
| SI7820DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 1.7A PPAK1212-8
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 16732 Stücke - Preis und Lieferfrist anzeigen
| SIS426DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6000 Stücke Description: MOSFET N-CH 20V 35A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 18220 Stücke - Preis und Lieferfrist anzeigen
| SIS426DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
auf Bestellung 8245 Stücke Description: MOSFET N-CH 20V 35A 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 15975 Stücke - Preis und Lieferfrist anzeigen
| SIS426DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A 1212-8
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 8245 Stücke Description: MOSFET N-CH 20V 35A 1212-8
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 15975 Stücke - Preis und Lieferfrist anzeigen
| SI4430BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 14A 8SO
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| SI4430BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 14A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 78605 Stücke - Preis und Lieferfrist anzeigen
| SI4430BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
auf Bestellung 2307 Stücke Description: MOSFET N-CH 30V 14A 8SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Lieferzeit 21-28 Tag (e)
auf Bestellung 76298 Stücke - Preis und Lieferfrist anzeigen
|
| SI7386DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SI7386
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 15000 Stücke Description: MOSFET N-CH 30V 12A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SI7386
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 17329 Stücke - Preis und Lieferfrist anzeigen
| SI7386DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Base Part Number: SI7386
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 15194 Stücke Description: MOSFET N-CH 30V 12A PPAK SO-8
Base Part Number: SI7386
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 17135 Stücke - Preis und Lieferfrist anzeigen
| SI7386DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
auf Bestellung 5713 Stücke - Preis und Lieferfrist anzeigen
| SI7386DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Power Dissipation (Max): 1.8W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 21 Stücke Description: MOSFET N-CH 30V 12A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 19A, 10V
Power Dissipation (Max): 1.8W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 5692 Stücke - Preis und Lieferfrist anzeigen
|
| SI7139DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 15V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7139
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 40A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 15V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7139
auf Bestellung 5935 Stücke - Preis und Lieferfrist anzeigen
| SI8402DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.3A 4MICROFOOT
Base Part Number: SI8402
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 5.3A 4MICROFOOT
Base Part Number: SI8402
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 850 Stücke - Preis und Lieferfrist anzeigen
| SI8405DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3.6A 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Base Part Number: SI8405
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 3.6A 4MICROFOOT
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 55mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Base Part Number: SI8405
auf Bestellung 2770 Stücke - Preis und Lieferfrist anzeigen
| SI7423DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A PPAK1212-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7423
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
auf Bestellung 1469 Stücke Description: MOSFET P-CH 30V 7.4A PPAK1212-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7423
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5427 Stücke - Preis und Lieferfrist anzeigen
| SI7423DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A PPAK1212-8
Base Part Number: SI7423
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
auf Bestellung 1469 Stücke Description: MOSFET P-CH 30V 7.4A PPAK1212-8
Base Part Number: SI7423
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5427 Stücke - Preis und Lieferfrist anzeigen
| SIS892DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Base Part Number: SIS892
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET N-CH 100V 30A PPAK1212-8
Base Part Number: SIS892
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8686 Stücke - Preis und Lieferfrist anzeigen
| SIS892DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS892
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3947 Stücke Description: MOSFET N-CH 100V 30A PPAK1212-8
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 611pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS892
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7739 Stücke - Preis und Lieferfrist anzeigen
| SI8425DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4WLCSP
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (1.6x1.6)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 4WLCSP
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 4-WLCSP (1.6x1.6)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 2A, 4.5V
auf Bestellung 7115 Stücke - Preis und Lieferfrist anzeigen
| SI8425DB-T1-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-WLCSP (1.6x1.6)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 2A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 7115 Stücke Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-WLCSP (1.6x1.6)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 2A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
| SI4896DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
auf Bestellung 55846 Stücke - Preis und Lieferfrist anzeigen
| SI4896DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
auf Bestellung 74 Stücke Description: MOSFET N-CH 80V 6.7A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4896
Lieferzeit 21-28 Tag (e)
auf Bestellung 55772 Stücke - Preis und Lieferfrist anzeigen
| SI6467BDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6.8A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 450µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 6.8A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 450µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
| SI4136DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 46A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4136
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 46A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4136
auf Bestellung 15399 Stücke - Preis und Lieferfrist anzeigen
| SI4136DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 46A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4136
auf Bestellung 3844 Stücke Description: MOSFET N-CH 20V 46A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4136
Lieferzeit 21-28 Tag (e)
auf Bestellung 11555 Stücke - Preis und Lieferfrist anzeigen
| SIR812DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V
Power - Max: 104W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V
Power - Max: 104W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 11806 Stücke - Preis und Lieferfrist anzeigen
| SIR812DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V
Power - Max: 104W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 5903 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V
Power - Max: 104W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 8903 Stücke - Preis und Lieferfrist anzeigen
| SIR812DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V
Power - Max: 104W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 5903 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10240pF @ 15V
Power - Max: 104W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 8903 Stücke - Preis und Lieferfrist anzeigen
| SI3460DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.1A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 5.1A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 28775 Stücke - Preis und Lieferfrist anzeigen
| SI3460DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.1A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Supplier Device Package: 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
auf Bestellung 748 Stücke Description: MOSFET N-CH 20V 5.1A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Supplier Device Package: 6-TSOP
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Lieferzeit 21-28 Tag (e)
auf Bestellung 28027 Stücke - Preis und Lieferfrist anzeigen
| SI4838BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 34A 8SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 12V 34A 8SO
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 148 Stücke - Preis und Lieferfrist anzeigen
| SI4838BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 34A 8SO
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
auf Bestellung 148 Stücke Description: MOSFET N-CH 12V 34A 8SO
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5760 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 4.5 V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Lieferzeit 21-28 Tag (e)
|
| IRLL110PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 400 Stücke - Preis und Lieferfrist anzeigen
| IRF610PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 3.3A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 6464 Stücke - Preis und Lieferfrist anzeigen
| IRFL110PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
| IRFL014PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 2.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
auf Bestellung 1859 Stücke - Preis und Lieferfrist anzeigen
| SI4630DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4630
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 10000 Stücke Description: MOSFET N-CH 25V 40A 8-SOIC
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4630
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 277738 Stücke - Preis und Lieferfrist anzeigen
| SI4630DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI4630
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
auf Bestellung 11109 Stücke Description: MOSFET N-CH 25V 40A 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI4630
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6670pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 276629 Stücke - Preis und Lieferfrist anzeigen
| SI4630DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 40A 8-SOIC
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
auf Bestellung 1041 Stücke - Preis und Lieferfrist anzeigen
| SI4630DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 1041 Stücke Description: MOSFET N-CH 25V 40A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Lieferzeit 21-28 Tag (e)
|
| SI7448DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.4A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 13.4A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 22A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
| SI7454DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 5A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 2628 Stücke - Preis und Lieferfrist anzeigen
| SI7454DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5A PPAK SO-8
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 152 Stücke Description: MOSFET N-CH 100V 5A PPAK SO-8
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 2476 Stücke - Preis und Lieferfrist anzeigen
|
| SI7818DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A 1212-8
Vgs (Max): ±20V
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke Description: MOSFET N-CH 150V 2.2A 1212-8
Vgs (Max): ±20V
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 13104 Stücke - Preis und Lieferfrist anzeigen
| SI7818DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
auf Bestellung 13104 Stücke Description: MOSFET N-CH 150V 2.2A 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
| SI7818DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 2.2A PPAK1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
auf Bestellung 7045 Stücke - Preis und Lieferfrist anzeigen
| SI7818DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 2363 Stücke Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SI7818
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 4682 Stücke - Preis und Lieferfrist anzeigen
| SIR492DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 36W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
auf Bestellung 6000 Stücke Description: MOSFET N-CH 12V 40A PPAK SO-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 36W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Lieferzeit 21-28 Tag (e)
auf Bestellung 26656 Stücke - Preis und Lieferfrist anzeigen
| SIR492DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 36W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 13328 Stücke Description: MOSFET N-CH 12V 40A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 36W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 19328 Stücke - Preis und Lieferfrist anzeigen
| SIR492DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 36W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 13328 Stücke Description: MOSFET N-CH 12V 40A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 36W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 19328 Stücke - Preis und Lieferfrist anzeigen
| SI7120ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7120
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 6A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7120
auf Bestellung 26474 Stücke - Preis und Lieferfrist anzeigen
| SI7623DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 35A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 8327 Stücke - Preis und Lieferfrist anzeigen
| SI7623DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 382 Stücke Description: MOSFET P-CH 20V 35A 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 7945 Stücke - Preis und Lieferfrist anzeigen
| SI7623DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 7945 Stücke Description: MOSFET P-CH 20V 35A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 5460pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 382 Stücke - Preis und Lieferfrist anzeigen
| SI4190ADY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.4A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 50V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4190
auf Bestellung 7500 Stücke Description: MOSFET N-CH 100V 18.4A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 50V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4190
Lieferzeit 21-28 Tag (e)
auf Bestellung 8414 Stücke - Preis und Lieferfrist anzeigen
| SI4190ADY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.4A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 50V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4190
auf Bestellung 8414 Stücke Description: MOSFET N-CH 100V 18.4A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 50V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4190
Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
| SUD50N03-06AP-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 90A TO252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
auf Bestellung 202015 Stücke - Preis und Lieferfrist anzeigen
| SI7107DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 450µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9.8A 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 450µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 201020 Stücke - Preis und Lieferfrist anzeigen
| SI7107DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 450µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 1020 Stücke Description: MOSFET P-CH 20V 9.8A 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 450µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
| SI7882DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 13A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 12V 13A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 17A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.9W
| SIS890DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 30A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 802 pF @ 50 V
| SI4654DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2500 Stücke Description: MOSFET N-CH 25V 28.6A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 4878 Stücke - Preis und Lieferfrist anzeigen
| SI4654DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Drain to Source Voltage (Vdss): 25V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
auf Bestellung 4878 Stücke Description: MOSFET N-CH 25V 28.6A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Drain to Source Voltage (Vdss): 25V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.9W
Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| SI5432DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 6096 Stücke - Preis und Lieferfrist anzeigen
| SI5432DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3048 Stücke Description: MOSFET N-CH 20V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 3048 Stücke - Preis und Lieferfrist anzeigen
| SI5432DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3048 Stücke Description: MOSFET N-CH 20V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 3048 Stücke - Preis und Lieferfrist anzeigen
| SI7110DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7110
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 13.5A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7110
auf Bestellung 29714 Stücke - Preis und Lieferfrist anzeigen
| SI7110DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7110
auf Bestellung 1196 Stücke Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7110
Lieferzeit 21-28 Tag (e)
auf Bestellung 28518 Stücke - Preis und Lieferfrist anzeigen
| SI4466DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9.5A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 9.5A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 125687 Stücke - Preis und Lieferfrist anzeigen
| SIR414DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
| SIR414DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3 Stücke Description: MOSFET N-CH 40V 50A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
| SI7774DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 9034 Stücke - Preis und Lieferfrist anzeigen
| SI7774DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 4517 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 7517 Stücke - Preis und Lieferfrist anzeigen
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