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SI1058X-T1-E3 SI1058X-T1-E3 Vishay Siliconix 73894.pdf Description: MOSFET N-CH 20V 1.3A SOT563F
Produkt ist nicht verfügbar
SI1065X-T1-E3 SI1065X-T1-E3 Vishay Siliconix si1065x.pdf Description: MOSFET P-CH 12V 1.18A SOT563F
Produkt ist nicht verfügbar
SI1067X-T1-E3 SI1067X-T1-E3 Vishay Siliconix si1067x.pdf Description: MOSFET P-CH 20V 1.06A SOT563F
Produkt ist nicht verfügbar
SI1070X-T1-E3 SI1070X-T1-E3 Vishay Siliconix si1070x.pdf Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
Produkt ist nicht verfügbar
Si1071X-T1-E3 Si1071X-T1-E3 Vishay Siliconix SI1071X.pdf Description: MOSFET P-CH 30V 0.96A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Produkt ist nicht verfügbar
SI1072X-T1-E3 SI1072X-T1-E3 Vishay Siliconix si1072x.pdf Description: MOSFET N-CH 30V 1.3A SOT563F
Produkt ist nicht verfügbar
SI1300BDL-T1-E3 SI1300BDL-T1-E3 Vishay Siliconix si1300bd.pdf Description: MOSFET N-CH 20V 400MA SOT323-3
Produkt ist nicht verfügbar
SI1302DL-T1-E3 SI1302DL-T1-E3 Vishay Siliconix si1302dl.pdf Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 3000
SI1303DL-T1-E3 SI1303DL-T1-E3 Vishay Siliconix 71075.pdf Description: MOSFET P-CH 20V 670MA SC70-3
Produkt ist nicht verfügbar
SI1303EDL-T1-E3 SI1303EDL-T1-E3 Vishay Siliconix 71094.pdf Description: MOSFET P-CH 20V 670MA SC70-3
Produkt ist nicht verfügbar
SI1304BDL-T1-E3 SI1304BDL-T1-E3 Vishay Siliconix si1304bd.pdf Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Produkt ist nicht verfügbar
SI1305DL-T1-E3 SI1305DL-T1-E3 Vishay Siliconix 71076.pdf Description: MOSFET P-CH 8V 0.86A SOT323-3
Produkt ist nicht verfügbar
SI1305EDL-T1-E3 SI1305EDL-T1-E3 Vishay Siliconix SI1305ED.pdf Description: MOSFET P-CH 8V 0.86A SOT323-3
Produkt ist nicht verfügbar
SI1307EDL-T1-E3 SI1307EDL-T1-E3 Vishay Siliconix SI1307ED.pdf Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
SI1330EDL-T1-E3 SI1330EDL-T1-E3 Vishay Siliconix SI1330ED.pdf Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.41 EUR
6000+ 0.39 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 3000
SI1400DL-T1-E3 SI1400DL-T1-E3 Vishay Siliconix si1400dl.pdf Description: MOSFET N-CH 20V 1.6A SC70-6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SI1403BDL-T1-E3 SI1403BDL-T1-E3 Vishay Siliconix si1403bdl.pdf Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.41 EUR
Mindestbestellmenge: 3000
SI1410EDH-T1-E3 SI1410EDH-T1-E3 Vishay Siliconix si1410ed.pdf Description: MOSFET N-CH 20V 2.9A SC70-6
Produkt ist nicht verfügbar
SI1411DH-T1-E3 SI1411DH-T1-E3 Vishay Siliconix SI1411DH.pdf Description: MOSFET P-CH 150V 0.42A SC70-6
Produkt ist nicht verfügbar
SI1413EDH-T1-E3 SI1413EDH-T1-E3 Vishay Siliconix si1413ed.pdf Description: MOSFET P-CH 20V 2.3A SC70-6
Produkt ist nicht verfügbar
SI1417EDH-T1-E3 SI1417EDH-T1-E3 Vishay Siliconix si1417ed.pdf Description: MOSFET P-CH 12V 2.7A SC70-6
Produkt ist nicht verfügbar
SI1419DH-T1-E3 SI1419DH-T1-E3 Vishay Siliconix SI1419DH.pdf Description: MOSFET P-CH 200V 0.3A SC70-6
Produkt ist nicht verfügbar
SI1426DH-T1-E3 SI1426DH-T1-E3 Vishay Siliconix si1426dh.pdf Description: MOSFET N-CH 30V 2.8A SC70-6
Produkt ist nicht verfügbar
SI1433DH-T1-E3 SI1433DH-T1-E3 Vishay Siliconix si1433dh.pdf Description: MOSFET P-CH 30V 1.9A SC70-6
Produkt ist nicht verfügbar
SI1450DH-T1-E3 SI1450DH-T1-E3 Vishay Siliconix SI1450DH.pdf Description: MOSFET N-CH 8V 4.53A SC70-6
Produkt ist nicht verfügbar
SI1469DH-T1-E3 SI1469DH-T1-E3 Vishay Siliconix si1469dh.pdf Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.55 EUR
6000+ 0.52 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 3000
SI1470DH-T1-E3 SI1470DH-T1-E3 Vishay Siliconix SI1470DH.pdf Description: MOSFET N-CH 30V 5.1A SC70-6
Produkt ist nicht verfügbar
SI1471DH-T1-E3 SI1471DH-T1-E3 Vishay Siliconix si1471dh.pdf Description: MOSFET P-CH 30V 2.7A SC70-6
Produkt ist nicht verfügbar
SI1472DH-T1-E3 SI1472DH-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 5.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Produkt ist nicht verfügbar
SI1473DH-T1-E3 SI1473DH-T1-E3 Vishay Siliconix si1473dh.pdf Description: MOSFET P-CH 30V 2.7A SC70-6
Produkt ist nicht verfügbar
SI1488DH-T1-E3 SI1488DH-T1-E3 Vishay Siliconix SI1488DH.pdf Description: MOSFET N-CH 20V 6.1A SC70-6
Produkt ist nicht verfügbar
SI1499DH-T1-E3 SI1499DH-T1-E3 Vishay Siliconix si1499dh.pdf Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
Produkt ist nicht verfügbar
SI1539DL-T1-E3 SI1539DL-T1-E3 Vishay Siliconix si1539dl.pdf Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1551DL-T1-E3 SI1551DL-T1-E3 Vishay Siliconix si1551dl.pdf Description: MOSFET N/P-CH 20V SC70-6
Produkt ist nicht verfügbar
SI1553DL-T1-E3 SI1553DL-T1-E3 Vishay Siliconix SI1553DL.pdf Description: MOSFET N/P-CH 20V SC70-6
Produkt ist nicht verfügbar
SI1555DL-T1-E3 SI1555DL-T1-E3 Vishay Siliconix Description: MOSFET N/P-CH 20V/8V SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Produkt ist nicht verfügbar
SI1563DH-T1-E3 SI1563DH-T1-E3 Vishay Siliconix 71963.pdf Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
SI1563EDH-T1-E3 SI1563EDH-T1-E3 Vishay Siliconix si1563edh.pdf Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
SI1865DL-T1-E3 SI1865DL-T1-E3 Vishay Siliconix si1865dl.pdf Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
Produkt ist nicht verfügbar
SI1869DH-T1-E3 SI1869DH-T1-E3 Vishay Siliconix SI1869DH.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
auf Bestellung 4680 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
Mindestbestellmenge: 3000
SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Siliconix si1902dl.pdf Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.41 EUR
6000+ 0.39 EUR
9000+ 0.36 EUR
30000+ 0.35 EUR
Mindestbestellmenge: 3000
SI1903DL-T1-E3 SI1903DL-T1-E3 Vishay Siliconix si1903dl.pdf Description: MOSFET 2P-CH 20V 0.41A SC70-6
Produkt ist nicht verfügbar
SI1905DL-T1-E3 SI1905DL-T1-E3 Vishay Siliconix si1905dl.pdf Description: MOSFET 2P-CH 8V 0.57A SC70-6
Produkt ist nicht verfügbar
SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Siliconix 71408.pdf Description: MOSFET 2N-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
SI1913DH-T1-E3 SI1913DH-T1-E3 Vishay Siliconix 71965.pdf Description: MOSFET 2P-CH 20V 0.88A SC70-6
Produkt ist nicht verfügbar
SI1913EDH-T1-E3 SI1913EDH-T1-E3 Vishay Siliconix 71415.pdf Description: MOSFET 2P-CH 20V 0.88A SC70-6
Produkt ist nicht verfügbar
SI1917EDH-T1-E3 SI1917EDH-T1-E3 Vishay Siliconix si1917edh.pdf Description: MOSFET 2P-CH 12V 1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 570mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 370mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1958DH-T1-E3 SI1958DH-T1-E3 Vishay Siliconix SI1958DH.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
Produkt ist nicht verfügbar
SI1970DH-T1-E3 SI1970DH-T1-E3 Vishay Siliconix SI1970DH.pdf Description: MOSFET 2N-CH 30V 1.3A SC70-6
Produkt ist nicht verfügbar
SI1972DH-T1-E3 SI1972DH-T1-E3 Vishay Siliconix si1972dh.pdf Description: MOSFET 2N-CH 30V 1.3A SC70-6
Produkt ist nicht verfügbar
SI1988DH-T1-E3 SI1988DH-T1-E3 Vishay Siliconix SI1988DH.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
Produkt ist nicht verfügbar
SI2301BDS-T1-E3 SI2301BDS-T1-E3 Vishay Siliconix si2301bds.pdf Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.25 EUR
Mindestbestellmenge: 3000
SI2302ADS-T1-E3 SI2302ADS-T1-E3 Vishay Siliconix si2302ad.pdf Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
SI2303BDS-T1-E3 SI2303BDS-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar
SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Siliconix si2304bds.pdf Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.25 EUR
Mindestbestellmenge: 3000
SI2306BDS-T1-E3 SI2306BDS-T1-E3 Vishay Siliconix si2306bd.pdf Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 3000
SI2307BDS-T1-E3 SI2307BDS-T1-E3 Vishay Siliconix si2307bd.pdf Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.5 EUR
6000+ 0.47 EUR
9000+ 0.44 EUR
Mindestbestellmenge: 3000
SI2308DS-T1-E3 SI2308DS-T1-E3 Vishay Siliconix 70797.pdf Description: MOSFET N-CH 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Produkt ist nicht verfügbar
SI2309DS-T1-E3 SI2309DS-T1-E3 Vishay Siliconix Description: MOSFET P-CH 60V 1.25A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
SI2312BDS-T1-E3 SI2312BDS-T1-E3 Vishay Siliconix si2312bds.pdf Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.44 EUR
6000+ 0.42 EUR
9000+ 0.39 EUR
30000+ 0.38 EUR
Mindestbestellmenge: 3000
SI1058X-T1-E3 73894.pdf
SI1058X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.3A SOT563F
Produkt ist nicht verfügbar
SI1065X-T1-E3 si1065x.pdf
SI1065X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 1.18A SOT563F
Produkt ist nicht verfügbar
SI1067X-T1-E3 si1067x.pdf
SI1067X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.06A SOT563F
Produkt ist nicht verfügbar
SI1070X-T1-E3 si1070x.pdf
SI1070X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
Produkt ist nicht verfügbar
Si1071X-T1-E3 SI1071X.pdf
Si1071X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Produkt ist nicht verfügbar
SI1072X-T1-E3 si1072x.pdf
SI1072X-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.3A SOT563F
Produkt ist nicht verfügbar
SI1300BDL-T1-E3 si1300bd.pdf
SI1300BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 400MA SOT323-3
Produkt ist nicht verfügbar
SI1302DL-T1-E3 si1302dl.pdf
SI1302DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
6000+ 0.32 EUR
9000+ 0.3 EUR
30000+ 0.29 EUR
Mindestbestellmenge: 3000
SI1303DL-T1-E3 71075.pdf
SI1303DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Produkt ist nicht verfügbar
SI1303EDL-T1-E3 71094.pdf
SI1303EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Produkt ist nicht verfügbar
SI1304BDL-T1-E3 si1304bd.pdf
SI1304BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Produkt ist nicht verfügbar
SI1305DL-T1-E3 71076.pdf
SI1305DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SOT323-3
Produkt ist nicht verfügbar
SI1305EDL-T1-E3 SI1305ED.pdf
SI1305EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SOT323-3
Produkt ist nicht verfügbar
SI1307EDL-T1-E3 SI1307ED.pdf
SI1307EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
SI1330EDL-T1-E3 SI1330ED.pdf
SI1330EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.41 EUR
6000+ 0.39 EUR
9000+ 0.36 EUR
Mindestbestellmenge: 3000
SI1400DL-T1-E3 si1400dl.pdf
SI1400DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SI1403BDL-T1-E3 si1403bdl.pdf
SI1403BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.41 EUR
Mindestbestellmenge: 3000
SI1410EDH-T1-E3 si1410ed.pdf
SI1410EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.9A SC70-6
Produkt ist nicht verfügbar
SI1411DH-T1-E3 SI1411DH.pdf
SI1411DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 0.42A SC70-6
Produkt ist nicht verfügbar
SI1413EDH-T1-E3 si1413ed.pdf
SI1413EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC70-6
Produkt ist nicht verfügbar
SI1417EDH-T1-E3 si1417ed.pdf
SI1417EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC70-6
Produkt ist nicht verfügbar
SI1419DH-T1-E3 SI1419DH.pdf
SI1419DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 0.3A SC70-6
Produkt ist nicht verfügbar
SI1426DH-T1-E3 si1426dh.pdf
SI1426DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70-6
Produkt ist nicht verfügbar
SI1433DH-T1-E3 si1433dh.pdf
SI1433DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A SC70-6
Produkt ist nicht verfügbar
SI1450DH-T1-E3 SI1450DH.pdf
SI1450DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4.53A SC70-6
Produkt ist nicht verfügbar
SI1469DH-T1-E3 si1469dh.pdf
SI1469DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.55 EUR
6000+ 0.52 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 3000
SI1470DH-T1-E3 SI1470DH.pdf
SI1470DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.1A SC70-6
Produkt ist nicht verfügbar
SI1471DH-T1-E3 si1471dh.pdf
SI1471DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
Produkt ist nicht verfügbar
SI1472DH-T1-E3
SI1472DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Produkt ist nicht verfügbar
SI1473DH-T1-E3 si1473dh.pdf
SI1473DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
Produkt ist nicht verfügbar
SI1488DH-T1-E3 SI1488DH.pdf
SI1488DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.1A SC70-6
Produkt ist nicht verfügbar
SI1499DH-T1-E3 si1499dh.pdf
SI1499DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
Produkt ist nicht verfügbar
SI1539DL-T1-E3 si1539dl.pdf
SI1539DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1551DL-T1-E3 si1551dl.pdf
SI1551DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Produkt ist nicht verfügbar
SI1553DL-T1-E3 SI1553DL.pdf
SI1553DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Produkt ist nicht verfügbar
SI1555DL-T1-E3
SI1555DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V/8V SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Produkt ist nicht verfügbar
SI1563DH-T1-E3 71963.pdf
SI1563DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
SI1563EDH-T1-E3 si1563edh.pdf
SI1563EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
SI1865DL-T1-E3 si1865dl.pdf
SI1865DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
Produkt ist nicht verfügbar
SI1869DH-T1-E3 SI1869DH.pdf
SI1869DH-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
auf Bestellung 4680 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
Mindestbestellmenge: 3000
SI1902DL-T1-E3 si1902dl.pdf
SI1902DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.41 EUR
6000+ 0.39 EUR
9000+ 0.36 EUR
30000+ 0.35 EUR
Mindestbestellmenge: 3000
SI1903DL-T1-E3 si1903dl.pdf
SI1903DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.41A SC70-6
Produkt ist nicht verfügbar
SI1905DL-T1-E3 si1905dl.pdf
SI1905DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Produkt ist nicht verfügbar
SI1912EDH-T1-E3 71408.pdf
SI1912EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
SI1913DH-T1-E3 71965.pdf
SI1913DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.88A SC70-6
Produkt ist nicht verfügbar
SI1913EDH-T1-E3 71415.pdf
SI1913EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.88A SC70-6
Produkt ist nicht verfügbar
SI1917EDH-T1-E3 si1917edh.pdf
SI1917EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 570mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 370mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1958DH-T1-E3 SI1958DH.pdf
SI1958DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Produkt ist nicht verfügbar
SI1970DH-T1-E3 SI1970DH.pdf
SI1970DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Produkt ist nicht verfügbar
SI1972DH-T1-E3 si1972dh.pdf
SI1972DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Produkt ist nicht verfügbar
SI1988DH-T1-E3 SI1988DH.pdf
SI1988DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Produkt ist nicht verfügbar
SI2301BDS-T1-E3 si2301bds.pdf
SI2301BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
auf Bestellung 57000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.25 EUR
Mindestbestellmenge: 3000
SI2302ADS-T1-E3 si2302ad.pdf
SI2302ADS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
SI2303BDS-T1-E3
SI2303BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar
SI2304BDS-T1-E3 si2304bds.pdf
SI2304BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.29 EUR
6000+ 0.28 EUR
9000+ 0.25 EUR
Mindestbestellmenge: 3000
SI2306BDS-T1-E3 si2306bd.pdf
SI2306BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 3000
SI2307BDS-T1-E3 si2307bd.pdf
SI2307BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.5 EUR
6000+ 0.47 EUR
9000+ 0.44 EUR
Mindestbestellmenge: 3000
SI2308DS-T1-E3 70797.pdf
SI2308DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Produkt ist nicht verfügbar
SI2309DS-T1-E3
SI2309DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.25A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
SI2312BDS-T1-E3 si2312bds.pdf
SI2312BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.44 EUR
6000+ 0.42 EUR
9000+ 0.39 EUR
30000+ 0.38 EUR
Mindestbestellmenge: 3000
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