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SI1302DL-T1-E3 SI1302DL-T1-E3 Vishay Siliconix si1302dl.pdf Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
auf Bestellung 60000 Stücke:
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3000+0.23 EUR
6000+0.22 EUR
9000+0.20 EUR
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SI1303DL-T1-E3 SI1303DL-T1-E3 Vishay Siliconix 71075.pdf Description: MOSFET P-CH 20V 670MA SC70-3
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SI1303EDL-T1-E3 SI1303EDL-T1-E3 Vishay Siliconix Description: MOSFET P-CH 20V 670MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
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SI1304BDL-T1-E3 SI1304BDL-T1-E3 Vishay Siliconix si1304bd.pdf Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
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SI1305DL-T1-E3 SI1305DL-T1-E3 Vishay Siliconix 71076.pdf Description: MOSFET P-CH 8V 0.86A SOT323-3
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SI1305EDL-T1-E3 SI1305EDL-T1-E3 Vishay Siliconix SI1305ED.pdf Description: MOSFET P-CH 8V 0.86A SOT323-3
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SI1307EDL-T1-E3 SI1307EDL-T1-E3 Vishay Siliconix SI1307ED.pdf Description: MOSFET P-CH 12V 0.85A SOT323-3
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SI1330EDL-T1-E3 SI1330EDL-T1-E3 Vishay Siliconix SI1330ED.pdf Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
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SI1400DL-T1-E3 SI1400DL-T1-E3 Vishay Siliconix si1400dl.pdf Description: MOSFET N-CH 20V 1.6A SC70-6
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SI1403BDL-T1-E3 SI1403BDL-T1-E3 Vishay Siliconix si1403bdl.pdf Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
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SI1410EDH-T1-E3 SI1410EDH-T1-E3 Vishay Siliconix Description: MOSFET N-CH 20V 2.9A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
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SI1411DH-T1-E3 SI1411DH-T1-E3 Vishay Siliconix SI1411DH.pdf Description: MOSFET P-CH 150V 0.42A SC70-6
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SI1413EDH-T1-E3 SI1413EDH-T1-E3 Vishay Siliconix si1413ed.pdf Description: MOSFET P-CH 20V 2.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
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SI1417EDH-T1-E3 SI1417EDH-T1-E3 Vishay Siliconix Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
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SI1419DH-T1-E3 SI1419DH-T1-E3 Vishay Siliconix SI1419DH.pdf Description: MOSFET P-CH 200V 0.3A SC70-6
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SI1426DH-T1-E3 SI1426DH-T1-E3 Vishay Siliconix si1426dh.pdf Description: MOSFET N-CH 30V 2.8A SC70-6
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SI1433DH-T1-E3 SI1433DH-T1-E3 Vishay Siliconix si1433dh.pdf Description: MOSFET P-CH 30V 1.9A SC70-6
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SI1450DH-T1-E3 SI1450DH-T1-E3 Vishay Siliconix SI1450DH.pdf Description: MOSFET N-CH 8V 4.53A SC70-6
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SI1469DH-T1-E3 SI1469DH-T1-E3 Vishay Siliconix si1469dh.pdf Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 9000 Stücke:
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3000+0.40 EUR
6000+0.38 EUR
9000+0.35 EUR
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SI1470DH-T1-E3 SI1470DH-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
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SI1471DH-T1-E3 SI1471DH-T1-E3 Vishay Siliconix si1471dh.pdf Description: MOSFET P-CH 30V 2.7A SC70-6
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SI1472DH-T1-E3 SI1472DH-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 5.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
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SI1473DH-T1-E3 SI1473DH-T1-E3 Vishay Siliconix si1473dh.pdf Description: MOSFET P-CH 30V 2.7A SC70-6
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SI1488DH-T1-E3 SI1488DH-T1-E3 Vishay Siliconix SI1488DH.pdf Description: MOSFET N-CH 20V 6.1A SC70-6
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SI1499DH-T1-E3 SI1499DH-T1-E3 Vishay Siliconix si1499dh.pdf Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
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3000+0.43 EUR
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SI1539DL-T1-E3 SI1539DL-T1-E3 Vishay Siliconix si1539dl.pdf Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
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SI1551DL-T1-E3 SI1551DL-T1-E3 Vishay Siliconix si1551dl.pdf Description: MOSFET N/P-CH 20V SC70-6
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SI1553DL-T1-E3 SI1553DL-T1-E3 Vishay Siliconix SI1553DL.pdf Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
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SI1555DL-T1-E3 SI1555DL-T1-E3 Vishay Siliconix Description: MOSFET N/P-CH 20V/8V 0.66A SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
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SI1563DH-T1-E3 SI1563DH-T1-E3 Vishay Siliconix 71963.pdf Description: MOSFET N/P-CH 20V 1.13A SC70-6
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SI1563EDH-T1-E3 SI1563EDH-T1-E3 Vishay Siliconix si1563edh.pdf Description: MOSFET N/P-CH 20V 1.13A SC70-6
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SI1865DL-T1-E3 SI1865DL-T1-E3 Vishay Siliconix si1865dl.pdf Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
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SI1869DH-T1-E3 SI1869DH-T1-E3 Vishay Siliconix SI1869DH.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
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SI1902DL-T1-E3 SI1902DL-T1-E3 Vishay Siliconix si1902dl.pdf Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 17750 Stücke:
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3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
15000+0.26 EUR
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SI1903DL-T1-E3 SI1903DL-T1-E3 Vishay Siliconix si1903dl.pdf Description: MOSFET 2P-CH 20V 0.41A SC70-6
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SI1905DL-T1-E3 SI1905DL-T1-E3 Vishay Siliconix si1905dl.pdf Description: MOSFET 2P-CH 8V 0.57A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 570mA
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
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SI1912EDH-T1-E3 SI1912EDH-T1-E3 Vishay Siliconix 71408.pdf Description: MOSFET 2N-CH 20V 1.13A SC70-6
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SI1913DH-T1-E3 SI1913DH-T1-E3 Vishay Siliconix 71965.pdf Description: MOSFET 2P-CH 20V 0.88A SC70-6
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SI1913EDH-T1-E3 SI1913EDH-T1-E3 Vishay Siliconix 71415.pdf Description: MOSFET 2P-CH 20V 0.88A SC70-6
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SI1917EDH-T1-E3 SI1917EDH-T1-E3 Vishay Siliconix si1917edh.pdf Description: MOSFET 2P-CH 12V 1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 570mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 370mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1958DH-T1-E3 SI1958DH-T1-E3 Vishay Siliconix SI1958DH.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
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SI1970DH-T1-E3 SI1970DH-T1-E3 Vishay Siliconix SI1970DH.pdf Description: MOSFET 2N-CH 30V 1.3A SC70-6
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SI1972DH-T1-E3 SI1972DH-T1-E3 Vishay Siliconix si1972dh.pdf Description: MOSFET 2N-CH 30V 1.3A SC70-6
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SI1988DH-T1-E3 SI1988DH-T1-E3 Vishay Siliconix SI1988DH.pdf Description: MOSFET 2N-CH 20V 1.3A SC70-6
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SI2301BDS-T1-E3 SI2301BDS-T1-E3 Vishay Siliconix si2301bds.pdf Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Produkt ist nicht verfügbar
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SI2302ADS-T1-E3 SI2302ADS-T1-E3 Vishay Siliconix si2302ad.pdf Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
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SI2303BDS-T1-E3 SI2303BDS-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar
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SI2304BDS-T1-E3 SI2304BDS-T1-E3 Vishay Siliconix si2304bds.pdf Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
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SI2306BDS-T1-E3 SI2306BDS-T1-E3 Vishay Siliconix si2306bd.pdf Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
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SI2307BDS-T1-E3 SI2307BDS-T1-E3 Vishay Siliconix si2307bd.pdf Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
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SI2308DS-T1-E3 SI2308DS-T1-E3 Vishay Siliconix 70797.pdf Description: MOSFET N-CH 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Produkt ist nicht verfügbar
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SI2309DS-T1-E3 SI2309DS-T1-E3 Vishay Siliconix Description: MOSFET P-CH 60V 1.25A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
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SI2312BDS-T1-E3 SI2312BDS-T1-E3 Vishay Siliconix si2312bds.pdf Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
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SI2314EDS-T1-E3 SI2314EDS-T1-E3 Vishay Siliconix si2314ed.pdf Description: MOSFET N-CH 20V 3.77A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
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SI2315BDS-T1-E3 SI2315BDS-T1-E3 Vishay Siliconix si2315bd.pdf Description: MOSFET P-CH 12V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
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3000+0.32 EUR
6000+0.29 EUR
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SI2316DS-T1-E3 SI2316DS-T1-E3 Vishay Siliconix si2316ds.pdf Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
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SI2318DS-T1-E3 SI2318DS-T1-E3 Vishay Siliconix si2318ds.pdf Description: MOSFET N-CH 40V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
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SI2319DS-T1-E3 SI2319DS-T1-E3 Vishay Siliconix si2319ds.pdf Description: MOSFET P-CH 40V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
auf Bestellung 93000 Stücke:
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6000+0.44 EUR
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SI2323DS-T1-E3 SI2323DS-T1-E3 Vishay Siliconix si2323ds.pdf Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar
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Si2325DS-T1-E3 Si2325DS-T1-E3 Vishay Siliconix 73238.pdf Description: MOSFET P-CH 150V 530MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 9000 Stücke:
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3000+0.63 EUR
6000+0.58 EUR
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SI1302DL-T1-E3 si1302dl.pdf
SI1302DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
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3000+0.23 EUR
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SI1303DL-T1-E3 71075.pdf
SI1303DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Produkt ist nicht verfügbar
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SI1303EDL-T1-E3
SI1303EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 670MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 670mA (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1A, 4.5V
Power Dissipation (Max): 290mW (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI1304BDL-T1-E3 si1304bd.pdf
SI1304BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 900MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Produkt ist nicht verfügbar
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SI1305DL-T1-E3 71076.pdf
SI1305DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SOT323-3
Produkt ist nicht verfügbar
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SI1305EDL-T1-E3 SI1305ED.pdf
SI1305EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 0.86A SOT323-3
Produkt ist nicht verfügbar
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SI1307EDL-T1-E3 SI1307ED.pdf
SI1307EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
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SI1330EDL-T1-E3 SI1330ED.pdf
SI1330EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
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SI1400DL-T1-E3 si1400dl.pdf
SI1400DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.6A SC70-6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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SI1403BDL-T1-E3 si1403bdl.pdf
SI1403BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
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SI1410EDH-T1-E3
SI1410EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.9A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI1411DH-T1-E3 SI1411DH.pdf
SI1411DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 0.42A SC70-6
Produkt ist nicht verfügbar
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SI1413EDH-T1-E3 si1413ed.pdf
SI1413EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI1417EDH-T1-E3
SI1417EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI1419DH-T1-E3 SI1419DH.pdf
SI1419DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 0.3A SC70-6
Produkt ist nicht verfügbar
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SI1426DH-T1-E3 si1426dh.pdf
SI1426DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70-6
Produkt ist nicht verfügbar
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SI1433DH-T1-E3 si1433dh.pdf
SI1433DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A SC70-6
Produkt ist nicht verfügbar
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SI1450DH-T1-E3 SI1450DH.pdf
SI1450DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4.53A SC70-6
Produkt ist nicht verfügbar
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SI1469DH-T1-E3 si1469dh.pdf
SI1469DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.40 EUR
6000+0.38 EUR
9000+0.35 EUR
Mindestbestellmenge: 3000
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SI1470DH-T1-E3
SI1470DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 15 V
Produkt ist nicht verfügbar
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SI1471DH-T1-E3 si1471dh.pdf
SI1471DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
Produkt ist nicht verfügbar
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SI1472DH-T1-E3
SI1472DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Produkt ist nicht verfügbar
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SI1473DH-T1-E3 si1473dh.pdf
SI1473DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
Produkt ist nicht verfügbar
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SI1488DH-T1-E3 SI1488DH.pdf
SI1488DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.1A SC70-6
Produkt ist nicht verfügbar
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SI1499DH-T1-E3 si1499dh.pdf
SI1499DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.43 EUR
Mindestbestellmenge: 3000
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SI1539DL-T1-E3 si1539dl.pdf
SI1539DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 0.54A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1551DL-T1-E3 si1551dl.pdf
SI1551DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Produkt ist nicht verfügbar
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SI1553DL-T1-E3 SI1553DL.pdf
SI1553DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1555DL-T1-E3
SI1555DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V/8V 0.66A SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 660mA, 570mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Produkt ist nicht verfügbar
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SI1563DH-T1-E3 71963.pdf
SI1563DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
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SI1563EDH-T1-E3 si1563edh.pdf
SI1563EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
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SI1865DL-T1-E3 si1865dl.pdf
SI1865DL-T1-E3
Hersteller: Vishay Siliconix
Description: IC LOAD SW LVL SHIFT 1.2A SC70-6
Produkt ist nicht verfügbar
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SI1869DH-T1-E3 SI1869DH.pdf
SI1869DH-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 132mOhm
Voltage - Load: 1.8V ~ 20V
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)
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SI1902DL-T1-E3 si1902dl.pdf
SI1902DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 17750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
9000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
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SI1903DL-T1-E3 si1903dl.pdf
SI1903DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.41A SC70-6
Produkt ist nicht verfügbar
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SI1905DL-T1-E3 si1905dl.pdf
SI1905DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 8V 0.57A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 570mA
Rds On (Max) @ Id, Vgs: 600mOhm @ 570mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1912EDH-T1-E3 71408.pdf
SI1912EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.13A SC70-6
Produkt ist nicht verfügbar
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SI1913DH-T1-E3 71965.pdf
SI1913DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.88A SC70-6
Produkt ist nicht verfügbar
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SI1913EDH-T1-E3 71415.pdf
SI1913EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.88A SC70-6
Produkt ist nicht verfügbar
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SI1917EDH-T1-E3 si1917edh.pdf
SI1917EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 570mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 370mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
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SI1958DH-T1-E3 SI1958DH.pdf
SI1958DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Produkt ist nicht verfügbar
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SI1970DH-T1-E3 SI1970DH.pdf
SI1970DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Produkt ist nicht verfügbar
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SI1972DH-T1-E3 si1972dh.pdf
SI1972DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Produkt ist nicht verfügbar
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SI1988DH-T1-E3 SI1988DH.pdf
SI1988DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SC70-6
Produkt ist nicht verfügbar
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SI2301BDS-T1-E3 si2301bds.pdf
SI2301BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Produkt ist nicht verfügbar
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SI2302ADS-T1-E3 si2302ad.pdf
SI2302ADS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
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SI2303BDS-T1-E3
SI2303BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar
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SI2304BDS-T1-E3 si2304bds.pdf
SI2304BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.36 EUR
6000+0.33 EUR
9000+0.31 EUR
15000+0.30 EUR
Mindestbestellmenge: 3000
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SI2306BDS-T1-E3 si2306bd.pdf
SI2306BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.28 EUR
6000+0.27 EUR
Mindestbestellmenge: 3000
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SI2307BDS-T1-E3 si2307bd.pdf
SI2307BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
6000+0.42 EUR
Mindestbestellmenge: 3000
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SI2308DS-T1-E3 70797.pdf
SI2308DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Produkt ist nicht verfügbar
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SI2309DS-T1-E3
SI2309DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.25A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
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SI2312BDS-T1-E3 si2312bds.pdf
SI2312BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.30 EUR
9000+0.28 EUR
15000+0.27 EUR
Mindestbestellmenge: 3000
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SI2314EDS-T1-E3 si2314ed.pdf
SI2314EDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.50 EUR
6000+0.46 EUR
9000+0.44 EUR
15000+0.43 EUR
Mindestbestellmenge: 3000
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SI2315BDS-T1-E3 si2315bd.pdf
SI2315BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.29 EUR
9000+0.28 EUR
15000+0.26 EUR
21000+0.25 EUR
Mindestbestellmenge: 3000
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SI2316DS-T1-E3 si2316ds.pdf
SI2316DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
6000+0.76 EUR
Mindestbestellmenge: 3000
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SI2318DS-T1-E3 si2318ds.pdf
SI2318DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
auf Bestellung 8412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
6000+0.29 EUR
Mindestbestellmenge: 3000
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SI2319DS-T1-E3 si2319ds.pdf
SI2319DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 2.3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.48 EUR
6000+0.44 EUR
9000+0.42 EUR
15000+0.40 EUR
Mindestbestellmenge: 3000
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SI2323DS-T1-E3 si2323ds.pdf
SI2323DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar
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Si2325DS-T1-E3 73238.pdf
Si2325DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 530MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.63 EUR
6000+0.58 EUR
9000+0.56 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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