Die Produkte vishay siliconix

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DG2738DN-T1-E4 DG2738DN-T1-E4 DG2737-39.pdf Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG2737DN-T1-E4 DG2737DN-T1-E4 DG2737-39.pdf Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
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Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
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Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
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DG2739DN-T1-E4 DG2739DN-T1-E4 DG2737-39.pdf Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2739
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Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2739
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Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
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DG419LDQ-T1-E3 DG419LDQ-T1-E3 dg417l.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8MSOP
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -71dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 8-MSOP
On-State Resistance (Max): 20Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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DG470EQ-T1-E3 DG470EQ-T1-E3 dg469.pdf Vishay Siliconix Description: IC SWITCH SNGL SPDT 8MSOP
Base Part Number: DG470
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -63dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Charge Injection: 58pC
Manufacturer: Vishay Siliconix
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
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DG2727DN-T1-E4 DG2727DN-T1-E4 dg2727.pdf Vishay Siliconix Description: IC SWTICH DUAL SPST 8-MINIQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1µA
Voltage - Supply, Single/Dual (±): 1.6 V ~ 4.3 V
On-State Resistance (Max): 1Ohm
Circuit: 2 x SPST
Function: Switch
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
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DG2722DN-T1-E4 DG2722DN-T1-E4 dg2722.pdf Vishay Siliconix Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -45dB @ 240MHz
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.2pF
Charge Injection: 0.5pC
-3db Bandwidth: 900MHz
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Voltage - Supply, Single (V+): 2.6V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 800mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
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Vishay Siliconix Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -45dB @ 240MHz
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.2pF
Charge Injection: 0.5pC
-3db Bandwidth: 900MHz
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Voltage - Supply, Single (V+): 2.6V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 800mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
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Vishay Siliconix Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -45dB @ 240MHz
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.2pF
Charge Injection: 0.5pC
-3db Bandwidth: 900MHz
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Voltage - Supply, Single (V+): 2.6V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 800mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
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DG721DQ-T1-GE3 DG721DQ-T1-GE3 dg723.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 8MSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 4.5Ohm
Channel-to-Channel Matching (ΔRon): 200mOhm
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 30ns, 35ns
-3db Bandwidth: 366MHz
Charge Injection: 2.2pC
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -90dB @ 10MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP
Base Part Number: DG721
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DG9252EN-T1-E4 DG9252EN-T1-E4 dg9251.pdf Vishay Siliconix Description: IC MULTIPLEXER DUAL 4CH 16QFN
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Number of Circuits: 2
On-State Resistance (Max): 182Ohm
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Switch Time (Ton, Toff) (Max): 250ns, 125ns
-3db Bandwidth: 449MHz
Charge Injection: 4.1pC
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -67dB @ 10MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Supplier Device Package: 16-miniQFN (1.8x2.6)
Base Part Number: DG9252
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DG723DQ-T1-GE3 DG723DQ-T1-GE3 dg723.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: IC SWITCH DUAL SPST 8MSOP
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
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100+ 2.95 EUR
DG308BDY-T1-E3 DG308BDY-T1-E3 dg308b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16SOIC
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
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Vishay Siliconix Description: IC SWITCH QUAD CMOS 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4V ~ 44V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
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DG509BEQ-T1-E3 DG509BEQ-T1-E3 dg508b.pdf Vishay Siliconix Description: IC MUX DUAL 4CHAN PREC 16-TSSOP
Number of Circuits: 2
Base Part Number: DG509
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
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Vishay Siliconix Description: IC MUX DUAL 4CHAN PREC 16-TSSOP
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG509
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
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Vishay Siliconix Description: IC MUX DUAL 4CHAN PREC 16-TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
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Lieferzeit 21-28 Tag (e)
DG1411EN-T1-GE4 DG1411EN-T1-GE4 dg1411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST QFN 4X4 16L
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 80mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
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Vishay Siliconix Description: IC SWITCH QUAD SPST QFN 4X4 16L
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Charge Injection: -20pC
-3db Bandwidth: 210MHz
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Channel-to-Channel Matching (ΔRon): 80mOhm
On-State Resistance (Max): 1.8Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG1412EN-T1-GE4 DG1412EN-T1-GE4 dg1411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST QFN 4X4 16L
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 80mOhm
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Vishay Siliconix Description: IC SWITCH QUAD SPST QFN 4X4 16L
On-State Resistance (Max): 1.8Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Charge Injection: -20pC
-3db Bandwidth: 210MHz
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Channel-to-Channel Matching (ΔRon): 80mOhm
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DG1413EN-T1-GE4 DG1413EN-T1-GE4 DG141x.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16VQFN
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel-to-Channel Matching (ΔRon): 80mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
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DG1412EQ-T1-GE3 DG1412EQ-T1-GE3 dg1411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-TSSOP
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Number of Circuits: 4
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 80mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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SI4427BDY-T1-E3 SI4427BDY-T1-E3 si4427bd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 9.7A 8-SOIC
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drain to Source Voltage (Vdss): 30V
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SI4413DDY-T1-GE3 Vishay Siliconix Description: MOSFET P-CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 15V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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DG2523DN-T1-GE4 DG2523DN-T1-GE4 dg2523.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 550mOhm
-3db Bandwidth: 310MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -19pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
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SIP12401DMP-T1-E3 sip12401.pdf Vishay Siliconix Description: IC LED DRIVER CTRLR DIM PPAK
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Dimming: PWM
Frequency: 600kHz
Voltage - Supply (Max): 5V
Voltage - Supply (Min): 1.8V
Number of Outputs: 1
Topology: Step-Up (Boost)
Type: DC DC Controller
Supplier Device Package: PowerPAK® MLP33-6
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SIP41109DY-T1-E3 SIP41109DY-T1-E3 SIP41109,%20SIP41110.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8V ~ 13.2V
Logic Voltage - VIL, VIH: 1V, 4V
Current - Peak Output (Source, Sink): 800mA, 1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 48V
Rise / Fall Time (Typ): 45ns, 35ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SIP411
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SIP41110DY-T1-E3 SIP41110DY-T1-E3 SIP41109,%20SIP41110.pdf Vishay Siliconix Description: IC DRVR MOSF 1/2BRDG N-CH 8SOIC
Voltage - Supply: 10.8V ~ 13.2V
High Side Voltage - Max (Bootstrap): 48V
Number of Outputs: 2
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Number of Configurations: 1
Current - Peak: 800mA
Delay Time: 15ns
Input Type: PWM
Configuration: Half Bridge
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SIP41104DY-T1-E3 SIP41104DY-T1-E3 SiP41104.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 0.5V, 4V
Current - Peak Output (Source, Sink): 900mA, 1.1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 32ns, 36ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SIP411
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SIP41105DQP-T1-E3 SiP41105.pdf Vishay Siliconix Description: IC DRIVER MOSF N-CH DCDC 16TSSOP
Current - Peak: 900mA
Delay Time: 30ns
Input Type: PWM
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Configuration: Half Bridge
High Side Voltage - Max (Bootstrap): 50V
Number of Outputs: 2
Number of Configurations: 1
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SIP41108DQP-T1-E3 SiP41108.pdf Vishay Siliconix Description: IC DRIVER MOSF N-CH PPAK 16TSSOP
Voltage - Supply: 10.8V ~ 13.2V
High Side Voltage - Max (Bootstrap): 48V
Number of Outputs: 2
Supplier Device Package: 16-TSSOP
Number of Configurations: 1
Current - Peak: 800mA
Delay Time: Adjustable
Input Type: PWM
Configuration: Half Bridge
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
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SIP41101DQ-T1-E3 SIP41101DQ-T1-E3 Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 16TSSOP
Base Part Number: SIP41101
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 15ns, 15ns
High Side Voltage - Max (Bootstrap): 30V
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 1V, 2.5V
Voltage - Supply: 4.5V ~ 5.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIP41111DY-T1-E3 SIP41111DY-T1-E3 SiP41111.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Base Part Number: SIP41111
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 13ns, 15ns
High Side Voltage - Max (Bootstrap): 75V
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 4V, 7V
Voltage - Supply: 9V ~ 13.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI9912DY-T1-E3 SI9912DY-T1-E3 si9912.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
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SI9913DY-T1-E3 SI9913DY-T1-E3 SI9913.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: 8-SO
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SI9910DY-E3 SI9910DY-E3 si9910.pdf Vishay Siliconix Description: IC GATE DRVR HIGH-SIDE 8SOIC
Channel Type: Single
Rise / Fall Time (Typ): 50ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 500 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 16.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
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SI9912DY-E3 SI9912DY-E3 si9912.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
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SI9913DY-E3 SI9913DY-E3 si9913.pdf Vishay Siliconix Description: IC DRIVER GATE HALF BRIDGE 8SOIC
Voltage - Supply: 4.5V ~ 5.5V
High Side Voltage - Max (Bootstrap): 30V
Number of Outputs: 2
Number of Configurations: 1
Current - Peak: 1A
Delay Time: 25ns
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: Non-Inverting
Configuration: Half Bridge
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SI9750CY-T1-E3 SI9750CY-T1-E3 si9750.pdf Vishay Siliconix Description: IC MOSFET DRIVER N-CH 16SOIC
Supplier Device Package: 16-SOIC N
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.9 V ~ 13 V
Number of Outputs: 1
Number of Configurations: 1
Input Type: Non-Inverting
Configuration: High-Side
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SI9976DY-T1-E3 SI9976DY-T1-E3 si9976.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9750CY-E3 SI9750CY-E3 si9750.pdf Vishay Siliconix Description: IC MOSFET DRIVER N-CH 16SOIC
Input Type: Non-Inverting
Configuration: High-Side
Supplier Device Package: 16-SOIC N
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.9 V ~ 13 V
Number of Outputs: 1
Number of Configurations: 1
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SI9976DY-E3 SI9976DY-E3 si9976.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Packaging: Bulk
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
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SI9978DW-T1-E3 SI9978DW-T1-E3 si9978.pdf Vishay Siliconix Description: IC GATE DRVR HALF-BRIDGE 24SOIC
Number of Drivers: 4
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 24-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Input Type: Non-Inverting
Voltage - Supply: 14.5V ~ 17.5V
Part Status: Obsolete
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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SIC734CD9-T1 sic734cd.pdf Vishay Siliconix Description: IC MOSFET DRIVER N-CH 32MLF
Current - Output / Channel: 25A
On-State Resistance (Max): 3.7 mOhm, 9.5 mOhm
Number of Outputs: 1
Input Type: PWM
Type: Half Bridge
Supplier Device Package: PowerPAK® MLP9x9
Package / Case: 32-PowerVQFN
Mounting Type: Surface Mount
Voltage - Supply: 3.3V ~ 24V
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SQD25N15-52_GE3 SQD25N15-52_GE3 sqd25n15-52.pdf Vishay Siliconix Description: MOSFET N-CH 150V 25A TO252
Base Part Number: SQD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI1028X-T1-GE3 si1028x.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI1034CX-T1-GE3 SI1034CX-T1-GE3 si1034cx.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1034
Supplier Device Package: SC-89-6
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SIZ340DT-T1-GE3 SIZ340DT-T1-GE3 siz340dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 30A PWRPAIR3X3
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET 2N-CH 30V 30A PWRPAIR3X3
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
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SI1023CX-T1-GE3 si1023cx.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V SC89-6
Rds On (Max) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1902CDL-T1-GE3 SI1902CDL-T1-GE3 si1902cdl.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 1.1A SC-70-6
Base Part Number: SI1902
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 420mW
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
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SI1553CDL-T1-GE3 SI1553CDL-T1-GE3 si1553cdl.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V SC70-6
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI1967DH-T1-E3 SI1967DH-T1-E3 si1967dh.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1926DL-T1-GE3 SI1926DL-T1-GE3 si1926dl.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 0.37A SOT363
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1970DH-T1-E3 SI1970DH-T1-E3 SI1970DH.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 1.3A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1034X-T1-GE3 SI1034X-T1-GE3 71427.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 0.18A SC89-6
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 20V 0.18A SC89-6
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
23+ 1.14 EUR
27+ 0.99 EUR
Vishay Siliconix Description: MOSFET 2N-CH 20V 0.18A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SI1033X-T1-GE3 SI1033X-T1-GE3 71428.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 0.145A SC89
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 145mA
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1025X-T1-GE3 SI1025X-T1-GE3 71433.pdf Vishay Siliconix Description: MOSFET 2P-CH 60V 0.19A SC-89
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Type: 2 P-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2P-CH 60V 0.19A SC-89
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Type: 2 P-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
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SI1965DH-T1-E3 SI1965DH-T1-E3 si1965dh.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 1.3A SC70-6
FET Type: 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5933CDC-T1-E3 SI5933CDC-T1-E3 si5933cd.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 3.7A 1206-8
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1903DL-T1-E3 SI1903DL-T1-E3 si1903dl.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 0.41A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1539DL-T1-GE3 SI1539DL-T1-GE3 si1539dl.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA931DJ-T1-GE3 SIA931DJ-T1-GE3 sia931dj.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 4.5A SC70-6L
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: 2 P-Channel (Dual)
Base Part Number: SIA931
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET 2P-CH 30V 4.5A SC70-6L
Base Part Number: SIA931
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 15310 Stücke
Lieferzeit 21-28 Tag (e)
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SI5935CDC-T1-E3 SI5935CDC-T1-E3 si5935cd.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA911ADJ-T1-GE3 SIA911ADJ-T1-GE3 sia911ad.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.5A SC70-6
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA914ADJ-T1-GE3 SIA914ADJ-T1-GE3 sia914adj.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6L
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6L
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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Lieferzeit 21-28 Tag (e)
SIA527DJ-T1-GE3 SIA527DJ-T1-GE3 sia527dj.pdf Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Base Part Number: SIA527
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIA527
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI3585CDV-T1-GE3 SI3585CDV-T1-GE3 si3585cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Base Part Number: SI3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W, 1.3W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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DG2738DN-T1-E4 DG2737-39.pdf
DG2738DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG2737DN-T1-E4 DG2737-39.pdf
DG2737DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG2737DN-T1-E4 DG2737-39.pdf
DG2737DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
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DG2737DN-T1-E4 DG2737-39.pdf
DG2737DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
Switch Time (Ton, Toff) (Max): 60ns, 50ns
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DG2739DN-T1-E4 DG2737-39.pdf
DG2739DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2739
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG2739DN-T1-E4 DG2737-39.pdf
DG2739DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2739
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DG2739DN-T1-E4 DG2737-39.pdf
DG2739DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -109dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 100mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Charge Injection: 10.4pC
-3db Bandwidth: 720MHz
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DG419LDQ-T1-E3 dg417l.pdf
DG419LDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8MSOP
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -71dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±3V ~ 6V
Voltage - Supply, Single (V+): 2.7V ~ 12V
Supplier Device Package: 8-MSOP
On-State Resistance (Max): 20Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG470EQ-T1-E3 dg469.pdf
DG470EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SNGL SPDT 8MSOP
Base Part Number: DG470
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -63dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Charge Injection: 58pC
Manufacturer: Vishay Siliconix
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG2727DN-T1-E4 dg2727.pdf
DG2727DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWTICH DUAL SPST 8-MINIQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Current - Supply: 1µA
Voltage - Supply, Single/Dual (±): 1.6 V ~ 4.3 V
On-State Resistance (Max): 1Ohm
Circuit: 2 x SPST
Function: Switch
Supplier Device Package: 8-miniQFN (1.4x1.4)
Package / Case: 8-UFQFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2722DN-T1-E4 dg2722.pdf
DG2722DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -45dB @ 240MHz
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.2pF
Charge Injection: 0.5pC
-3db Bandwidth: 900MHz
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Voltage - Supply, Single (V+): 2.6V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 800mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG2722DN-T1-E4 dg2722.pdf
DG2722DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -45dB @ 240MHz
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.2pF
Charge Injection: 0.5pC
-3db Bandwidth: 900MHz
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Voltage - Supply, Single (V+): 2.6V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 800mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
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DG2722DN-T1-E4 dg2722.pdf
DG2722DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -45dB @ 240MHz
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 2.2pF
Charge Injection: 0.5pC
-3db Bandwidth: 900MHz
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Voltage - Supply, Single (V+): 2.6V ~ 4.3V
Channel-to-Channel Matching (ΔRon): 800mOhm
On-State Resistance (Max): 8Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
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DG721DQ-T1-GE3 dg723.pdf
DG721DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 4.5Ohm
Channel-to-Channel Matching (ΔRon): 200mOhm
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 30ns, 35ns
-3db Bandwidth: 366MHz
Charge Injection: 2.2pC
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -90dB @ 10MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP
Base Part Number: DG721
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG9252EN-T1-E4 dg9251.pdf
DG9252EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4CH 16QFN
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Number of Circuits: 2
On-State Resistance (Max): 182Ohm
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Switch Time (Ton, Toff) (Max): 250ns, 125ns
-3db Bandwidth: 449MHz
Charge Injection: 4.1pC
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -67dB @ 10MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Supplier Device Package: 16-miniQFN (1.8x2.6)
Base Part Number: DG9252
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG723DQ-T1-GE3 dg723.pdf
DG723DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG723DQ-T1-GE3 dg723.pdf
DG723DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8MSOP
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
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Lieferzeit 21-28 Tag (e)
7+ 4.16 EUR
10+ 3.52 EUR
25+ 3.28 EUR
100+ 2.95 EUR
DG308BDY-T1-E3 dg308b.pdf
DG308BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16SOIC
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG308BDY-T1-E3 dg308b.pdf
DG308BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4V ~ 44V
Voltage - Supply, Dual (V±): ±4V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
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4+ 7.36 EUR
10+ 6.6 EUR
25+ 6.22 EUR
100+ 5.3 EUR
DG509BEQ-T1-E3 dg508b.pdf
DG509BEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 4CHAN PREC 16-TSSOP
Number of Circuits: 2
Base Part Number: DG509
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG509BEQ-T1-E3 dg508b.pdf
DG509BEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 4CHAN PREC 16-TSSOP
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG509
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
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DG509BEQ-T1-E3 dg508b.pdf
DG509BEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 4CHAN PREC 16-TSSOP
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Charge Injection: 2pC
-3db Bandwidth: 250MHz
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 380Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
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DG1411EN-T1-GE4 dg1411.pdf
DG1411EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST QFN 4X4 16L
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 80mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG1411EN-T1-GE4 dg1411.pdf
DG1411EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST QFN 4X4 16L
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Charge Injection: -20pC
-3db Bandwidth: 210MHz
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Channel-to-Channel Matching (ΔRon): 80mOhm
On-State Resistance (Max): 1.8Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
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DG1412EN-T1-GE4 dg1411.pdf
DG1412EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST QFN 4X4 16L
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 80mOhm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG1412EN-T1-GE4 dg1411.pdf
DG1412EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST QFN 4X4 16L
On-State Resistance (Max): 1.8Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -100dB @ 1MHz
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Charge Injection: -20pC
-3db Bandwidth: 210MHz
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Channel-to-Channel Matching (ΔRon): 80mOhm
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DG1413EN-T1-GE4 DG141x.pdf
DG1413EN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16VQFN
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel-to-Channel Matching (ΔRon): 80mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG1412EQ-T1-GE3 dg1411.pdf
DG1412EQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-TSSOP
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 550pA
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Number of Circuits: 4
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel-to-Channel Matching (ΔRon): 80mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -20pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 210MHz
On-State Resistance (Max): 1.8Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4427BDY-T1-E3 si4427bd.pdf
SI4427BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9.7A 8-SOIC
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drain to Source Voltage (Vdss): 30V
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SI4413DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 15V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2523DN-T1-GE4 dg2523.pdf
DG2523DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 550mOhm
-3db Bandwidth: 310MHz
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -19pC
Crosstalk: -61dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP12401DMP-T1-E3 sip12401.pdf
Hersteller: Vishay Siliconix
Description: IC LED DRIVER CTRLR DIM PPAK
Package / Case: PowerPAK® MLP33-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Dimming: PWM
Frequency: 600kHz
Voltage - Supply (Max): 5V
Voltage - Supply (Min): 1.8V
Number of Outputs: 1
Topology: Step-Up (Boost)
Type: DC DC Controller
Supplier Device Package: PowerPAK® MLP33-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP41109DY-T1-E3 SIP41109,%20SIP41110.pdf
SIP41109DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8V ~ 13.2V
Logic Voltage - VIL, VIH: 1V, 4V
Current - Peak Output (Source, Sink): 800mA, 1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 48V
Rise / Fall Time (Typ): 45ns, 35ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SIP411
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP41110DY-T1-E3 SIP41109,%20SIP41110.pdf
SIP41110DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC DRVR MOSF 1/2BRDG N-CH 8SOIC
Voltage - Supply: 10.8V ~ 13.2V
High Side Voltage - Max (Bootstrap): 48V
Number of Outputs: 2
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Number of Configurations: 1
Current - Peak: 800mA
Delay Time: 15ns
Input Type: PWM
Configuration: Half Bridge
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIP41104DY-T1-E3 SiP41104.pdf
SIP41104DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 0.5V, 4V
Current - Peak Output (Source, Sink): 900mA, 1.1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 50V
Rise / Fall Time (Typ): 32ns, 36ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SIP411
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP41105DQP-T1-E3 SiP41105.pdf
Hersteller: Vishay Siliconix
Description: IC DRIVER MOSF N-CH DCDC 16TSSOP
Current - Peak: 900mA
Delay Time: 30ns
Input Type: PWM
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Configuration: Half Bridge
High Side Voltage - Max (Bootstrap): 50V
Number of Outputs: 2
Number of Configurations: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP41108DQP-T1-E3 SiP41108.pdf
Hersteller: Vishay Siliconix
Description: IC DRIVER MOSF N-CH PPAK 16TSSOP
Voltage - Supply: 10.8V ~ 13.2V
High Side Voltage - Max (Bootstrap): 48V
Number of Outputs: 2
Supplier Device Package: 16-TSSOP
Number of Configurations: 1
Current - Peak: 800mA
Delay Time: Adjustable
Input Type: PWM
Configuration: Half Bridge
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP41101DQ-T1-E3
SIP41101DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 16TSSOP
Base Part Number: SIP41101
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 15ns, 15ns
High Side Voltage - Max (Bootstrap): 30V
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 1V, 2.5V
Voltage - Supply: 4.5V ~ 5.5V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP41111DY-T1-E3 SiP41111.pdf
SIP41111DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Base Part Number: SIP41111
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 13ns, 15ns
High Side Voltage - Max (Bootstrap): 75V
Input Type: Non-Inverting
Current - Peak Output (Source, Sink): 2A, 2A
Logic Voltage - VIL, VIH: 4V, 7V
Voltage - Supply: 9V ~ 13.2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9912DY-T1-E3 si9912.pdf
SI9912DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9913DY-T1-E3 SI9913.pdf
SI9913DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: 8-SO
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9910DY-E3 si9910.pdf
SI9910DY-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Channel Type: Single
Rise / Fall Time (Typ): 50ns, 35ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 500 V
Input Type: Non-Inverting
Voltage - Supply: 10.8V ~ 16.5V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
Gate Type: N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9912DY-E3 si9912.pdf
SI9912DY-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Current - Peak Output (Source, Sink): 1A, 1A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 30ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 30 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9913DY-E3 si9913.pdf
SI9913DY-E3
Hersteller: Vishay Siliconix
Description: IC DRIVER GATE HALF BRIDGE 8SOIC
Voltage - Supply: 4.5V ~ 5.5V
High Side Voltage - Max (Bootstrap): 30V
Number of Outputs: 2
Number of Configurations: 1
Current - Peak: 1A
Delay Time: 25ns
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: Non-Inverting
Configuration: Half Bridge
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9750CY-T1-E3 si9750.pdf
SI9750CY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MOSFET DRIVER N-CH 16SOIC
Supplier Device Package: 16-SOIC N
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.9 V ~ 13 V
Number of Outputs: 1
Number of Configurations: 1
Input Type: Non-Inverting
Configuration: High-Side
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9976DY-T1-E3 si9976.pdf
SI9976DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9750CY-E3 si9750.pdf
SI9750CY-E3
Hersteller: Vishay Siliconix
Description: IC MOSFET DRIVER N-CH 16SOIC
Input Type: Non-Inverting
Configuration: High-Side
Supplier Device Package: 16-SOIC N
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.9 V ~ 13 V
Number of Outputs: 1
Number of Configurations: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9976DY-E3 si9976.pdf
SI9976DY-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 500mA, 500mA
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Packaging: Bulk
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 16.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9978DW-T1-E3 si9978.pdf
SI9978DW-T1-E3
Hersteller: Vishay Siliconix
Description: IC GATE DRVR HALF-BRIDGE 24SOIC
Number of Drivers: 4
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 110ns, 50ns
Supplier Device Package: 24-SOIC
High Side Voltage - Max (Bootstrap): 40 V
Input Type: Non-Inverting
Voltage - Supply: 14.5V ~ 17.5V
Part Status: Obsolete
Logic Voltage - VIL, VIH: 1V, 4V
Gate Type: N-Channel MOSFET
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC734CD9-T1 sic734cd.pdf
Hersteller: Vishay Siliconix
Description: IC MOSFET DRIVER N-CH 32MLF
Current - Output / Channel: 25A
On-State Resistance (Max): 3.7 mOhm, 9.5 mOhm
Number of Outputs: 1
Input Type: PWM
Type: Half Bridge
Supplier Device Package: PowerPAK® MLP9x9
Package / Case: 32-PowerVQFN
Mounting Type: Surface Mount
Voltage - Supply: 3.3V ~ 24V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD25N15-52_GE3 sqd25n15-52.pdf
SQD25N15-52_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Base Part Number: SQD25
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI1028X-T1-GE3 si1028x.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1034CX-T1-GE3 si1034cx.pdf
SI1034CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V SC89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1034
Supplier Device Package: SC-89-6
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SIZ340DT-T1-GE3 siz340dt.pdf
SIZ340DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PWRPAIR3X3
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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SIZ340DT-T1-GE3 siz340dt.pdf
SIZ340DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PWRPAIR3X3
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
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SI1023CX-T1-GE3 si1023cx.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6
Rds On (Max) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1902CDL-T1-GE3 si1902cdl.pdf
SI1902CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC-70-6
Base Part Number: SI1902
Manufacturer: Vishay Siliconix
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 420mW
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
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SI1553CDL-T1-GE3 si1553cdl.pdf
SI1553CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Base Part Number: SI1553
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 340mW
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI1967DH-T1-E3 si1967dh.pdf
SI1967DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1926DL-T1-GE3 si1926dl.pdf
SI1926DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SOT363
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 510mW
Input Capacitance (Ciss) (Max) @ Vds: 18.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 340mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1970DH-T1-E3 SI1970DH.pdf
SI1970DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 1.3A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1034X-T1-GE3 71427.pdf
SI1034X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SC89-6
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1034X-T1-GE3 71427.pdf
SI1034X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SC89-6
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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23+ 1.14 EUR
27+ 0.99 EUR
SI1034X-T1-GE3 71427.pdf
SI1034X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SI1033X-T1-GE3 71428.pdf
SI1033X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.145A SC89
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 145mA
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1025X-T1-GE3 71433.pdf
SI1025X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC-89
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Type: 2 P-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1025X-T1-GE3 71433.pdf
SI1025X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 0.19A SC-89
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 190mA
Drain to Source Voltage (Vdss): 60V
FET Type: 2 P-Channel (Dual)
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
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SI1965DH-T1-E3 si1965dh.pdf
SI1965DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
FET Type: 2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5933CDC-T1-E3 si5933cd.pdf
SI5933CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.7A 1206-8
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1903DL-T1-E3 si1903dl.pdf
SI1903DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.41A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1539DL-T1-GE3 si1539dl.pdf
SI1539DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA931DJ-T1-GE3 sia931dj.pdf
SIA931DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6L
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: 2 P-Channel (Dual)
Base Part Number: SIA931
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIA931DJ-T1-GE3 sia931dj.pdf
SIA931DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6L
Base Part Number: SIA931
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI5935CDC-T1-E3 si5935cd.pdf
SI5935CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA911ADJ-T1-GE3 sia911ad.pdf
SIA911ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA914ADJ-T1-GE3 sia914adj.pdf
SIA914ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6L
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
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Lieferzeit 21-28 Tag (e)
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SIA914ADJ-T1-GE3 sia914adj.pdf
SIA914ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6L
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
auf Bestellung 8352 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14352 Stücke - Preis und Lieferfrist anzeigen
SIA914ADJ-T1-GE3 sia914adj.pdf
SIA914ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6L
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 8352 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14352 Stücke - Preis und Lieferfrist anzeigen
SIA527DJ-T1-GE3 sia527dj.pdf
SIA527DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Base Part Number: SIA527
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SIA527DJ-T1-GE3 sia527dj.pdf
SIA527DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIA527
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
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Lieferzeit 21-28 Tag (e)
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SIA527DJ-T1-GE3 sia527dj.pdf
SIA527DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SI3585CDV-T1-GE3 si3585cd.pdf
SI3585CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Base Part Number: SI3585
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W, 1.3W
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
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