Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
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SI3588DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.5A 6TSOP Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW, 83mW Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate Package / Case: SOT-23-6 Thin, TSOT-23-6 FET Type: N and P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 410 Stücke - Preis und Lieferfrist anzeigen
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SI4599DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 40V 6.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A Drain to Source Voltage (Vdss): 40V FET Type: N and P-Channel Power - Max: 3W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 52 Stücke - Preis und Lieferfrist anzeigen
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SI9934BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.8A 8-SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA FET Type: 2 P-Channel (Dual) Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.8A Drain to Source Voltage (Vdss): 12V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 215200 Stücke - Preis und Lieferfrist anzeigen
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SI3586DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
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SI7218DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 24A 1212-8 FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI7218 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 23W Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A Drain to Source Voltage (Vdss): 30V FET Feature: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 24A 1212-8 Base Part Number: SI7218 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 23W Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 712 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 24A 1212-8 Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 23W Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Base Part Number: SI7218 Supplier Device Package: PowerPAK® 1212-8 Dual Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 985 Stücke Lieferzeit 21-28 Tag (e) |
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SI4286DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 7A 8SO Power - Max: 2.9W Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 40V 7A 8SO Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.9W Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) |
auf Bestellung 2508 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 40V 7A 8SO Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 7A Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.9W Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA |
auf Bestellung 2558 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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SI4500BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6.6A 8SOIC Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel, Common Drain Supplier Device Package: 8-SOIC N Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 158833 Stücke - Preis und Lieferfrist anzeigen
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SI4500BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6.6A 8-SOIC FET Type: N and P-Channel, Common Drain Power - Max: 1.3W Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SIZ300DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 11A POWERPAIR Supplier Device Package: 8-PowerPair® Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Power - Max: 16.7W, 31W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 11A POWERPAIR Part Status: Active Supplier Device Package: 8-PowerPair® Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11A, 28A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Power - Max: 16.7W, 31W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 45 Stücke Lieferzeit 21-28 Tag (e) |
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SI4900DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 60V FET Type: 2 N-Channel (Dual) Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 258000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: SI4900 |
auf Bestellung 3170 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 258000 Stücke - Preis und Lieferfrist anzeigen
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SI5517DU-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6A CHIPFET Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 8.3W Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6A CHIPFET Power - Max: 8.3W Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 8780 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N/P-CH 20V 6A CHIPFET Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: PowerPAK® ChipFet Dual Package / Case: PowerPAK® ChipFET™ Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 8.3W |
auf Bestellung 8780 Stücke Lieferzeit 21-28 Tag (e) |
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SI4830CDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Tape & Reel (TR) Base Part Number: SI4830 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.9W Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 3V @ 1mA Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 247 Stücke - Preis und Lieferfrist anzeigen
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SIZ918DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A POWERPAIR Base Part Number: SIZ918 Supplier Device Package: 8-PowerPair® (6x5) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W, 100W Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 21000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5120 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A POWERPAIR Base Part Number: SIZ918 Supplier Device Package: 8-PowerPair® (6x5) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W, 100W Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 22314 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5120 Stücke - Preis und Lieferfrist anzeigen
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SIZ702DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A POWERPAIR Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Power - Max: 27W, 30W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair™ Supplier Device Package: 6-PowerPair™ Base Part Number: SIZ702 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A POWERPAIR Supplier Device Package: 6-PowerPair™ Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 27W, 30W Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA |
auf Bestellung 60 Stücke Lieferzeit 21-28 Tag (e) |
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SI7904BDN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A 1212-8 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.8W Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 168 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A 1212-8 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.8W Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount |
auf Bestellung 402 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 168 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A 1212-8 Power - Max: 17.8W Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 402 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 168 Stücke - Preis und Lieferfrist anzeigen
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SI6562DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 8-TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 100000 Stücke - Preis und Lieferfrist anzeigen
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SI6562DQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 8-TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 64000 Stücke - Preis und Lieferfrist anzeigen
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SI4618DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.98W, 4.16W Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 97500 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.98W, 4.16W Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V |
auf Bestellung 5638 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 97500 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8-SOIC Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Half Bridge) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.98W, 4.16W Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SO |
auf Bestellung 5638 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 97500 Stücke - Preis und Lieferfrist anzeigen
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SIZ710DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 16A POWERPAIR Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 16A, 35A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Base Part Number: SIZ710 Supplier Device Package: 6-PowerPair™ Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 27W, 48W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2868 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 16A POWERPAIR Current - Continuous Drain (Id) @ 25°C: 16A, 35A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate Part Status: Active FET Type: 2 N-Channel (Half Bridge) Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIZ710 Supplier Device Package: 6-PowerPair™ Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 27W, 48W Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V |
auf Bestellung 2861 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2868 Stücke - Preis und Lieferfrist anzeigen
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SI7998DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 25A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A, 30A Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Base Part Number: SI7998 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5176 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 25A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A, 30A Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Base Part Number: SI7998 |
auf Bestellung 1521 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5176 Stücke - Preis und Lieferfrist anzeigen
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SI6924AEDQ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 28V 4.1A 8-TSSOP Base Part Number: SI6924 Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A Drain to Source Voltage (Vdss): 28V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Common Drain Part Status: Obsolete Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI4511DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 181000 Stücke - Preis und Lieferfrist anzeigen
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SI7900AEDN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Common Drain Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1388 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A 1212-8 Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Common Drain Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W |
auf Bestellung 8537 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1388 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6A 1212-8 Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Common Drain Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
auf Bestellung 9119 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1388 Stücke - Preis und Lieferfrist anzeigen
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SI7949DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8 Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W |
auf Bestellung 16869 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8 FET Type: 2 P-Channel (Dual) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W |
auf Bestellung 16869 Stücke Lieferzeit 21-28 Tag (e) |
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SI6993DQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 30V 3.6A 8-TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4578 Stücke - Preis und Lieferfrist anzeigen
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SI7540DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Base Part Number: SI7540 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7222DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 6A PPAK 1212-8 FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.8W Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 40V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7530DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 60V 3A PPAK SO-8 Power - Max: 1.4W, 1.5W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: N and P-Channel Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 518 Stücke - Preis und Lieferfrist anzeigen
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SI7220DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 3.4A 1212-8 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7358 Stücke - Preis und Lieferfrist anzeigen
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SI4936ADY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.4A 8-SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 187738 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.4A 8-SOIC Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 1.1W |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 187738 Stücke - Preis und Lieferfrist anzeigen
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SIZ910DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A POWERPAIR Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate Supplier Device Package: 8-PowerPair® Package / Case: 8-PowerWDFN FET Type: 2 N-Channel (Half Bridge) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 48W, 100W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A POWERPAIR Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Supplier Device Package: 8-PowerPair® Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 48W, 100W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA |
auf Bestellung 3388 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A POWERPAIR Supplier Device Package: 8-PowerPair® Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 48W, 100W Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) |
auf Bestellung 3388 Stücke Lieferzeit 21-28 Tag (e) |
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SI7905DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 40V 6A PPAK 1212-8 Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: 2 P-Channel (Dual) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V Power - Max: 20.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual Base Part Number: SI7905 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
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SI7252DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 3.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Current - Continuous Drain (Id) @ 25°C: 36.7A Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15017 Stücke - Preis und Lieferfrist anzeigen
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SI4942DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5.3A 8-SOIC Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 115500 Stücke - Preis und Lieferfrist anzeigen
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SI7960DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8 FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A Drain to Source Voltage (Vdss): 60V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8 FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate |
auf Bestellung 417 Stücke Lieferzeit 21-28 Tag (e) |
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SI7946DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.1A Drain to Source Voltage (Vdss): 150V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2296 Stücke - Preis und Lieferfrist anzeigen
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2N7002K-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 300MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 445119 Stücke - Preis und Lieferfrist anzeigen
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SI2365EDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 5.9A TO236 Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 83843 Stücke - Preis und Lieferfrist anzeigen
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SI2301BDS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 2.2A SOT23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Vgs (Max): ±8V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22327 Stücke - Preis und Lieferfrist anzeigen
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| SI3588DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.5A 6TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW, 83mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 2.5A 6TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW, 83mW
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 410 Stücke - Preis und Lieferfrist anzeigen
| SI4599DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 40V 6.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 5.8A
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
auf Bestellung 52 Stücke - Preis und Lieferfrist anzeigen
| SI9934BDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.8A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 12V 4.8A 8-SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 12V
auf Bestellung 215200 Stücke - Preis und Lieferfrist anzeigen
| SI3586DV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.9A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 2.9A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
| SI7218DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7218
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 24A 1212-8
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7218
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
auf Bestellung 1697 Stücke - Preis und Lieferfrist anzeigen
| SI7218DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
Base Part Number: SI7218
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 712 Stücke Description: MOSFET 2N-CH 30V 24A 1212-8
Base Part Number: SI7218
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 985 Stücke - Preis und Lieferfrist anzeigen
| SI7218DN-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A 1212-8
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI7218
Supplier Device Package: PowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 985 Stücke Description: MOSFET 2N-CH 30V 24A 1212-8
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI7218
Supplier Device Package: PowerPAK® 1212-8 Dual
Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 712 Stücke - Preis und Lieferfrist anzeigen
| SI4286DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SO
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 7A 8SO
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5116 Stücke - Preis und Lieferfrist anzeigen
| SI4286DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
auf Bestellung 2508 Stücke Description: MOSFET 2N-CH 40V 7A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2608 Stücke - Preis und Lieferfrist anzeigen
| SI4286DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SO
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 2558 Stücke Description: MOSFET 2N-CH 40V 7A 8SO
Rds On (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 2558 Stücke - Preis und Lieferfrist anzeigen
| SI4500BDY-T1-E3 | |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.6A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 6.6A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
auf Bestellung 158833 Stücke - Preis und Lieferfrist anzeigen
| SI4500BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.6A 8-SOIC
FET Type: N and P-Channel, Common Drain
Power - Max: 1.3W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 20V 6.6A 8-SOIC
FET Type: N and P-Channel, Common Drain
Power - Max: 1.3W
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
| SIZ300DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 11A POWERPAIR
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 45 Stücke - Preis und Lieferfrist anzeigen
| SIZ300DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 45 Stücke Description: MOSFET 2N-CH 30V 11A POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| SI4900DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 5.3A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 261170 Stücke - Preis und Lieferfrist anzeigen
| SI4900DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4900
auf Bestellung 3170 Stücke Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4900
Lieferzeit 21-28 Tag (e)
auf Bestellung 258000 Stücke - Preis und Lieferfrist anzeigen
| SI5517DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
auf Bestellung 6000 Stücke Description: MOSFET N/P-CH 20V 6A CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 17560 Stücke - Preis und Lieferfrist anzeigen
| SI5517DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 8780 Stücke Description: MOSFET N/P-CH 20V 6A CHIPFET
Power - Max: 8.3W
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 14780 Stücke - Preis und Lieferfrist anzeigen
| SI5517DU-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
auf Bestellung 8780 Stücke Description: MOSFET N/P-CH 20V 6A CHIPFET
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® ChipFet Dual
Package / Case: PowerPAK® ChipFET™ Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 8.3W
Lieferzeit 21-28 Tag (e)
auf Bestellung 14780 Stücke - Preis und Lieferfrist anzeigen
| SI4830CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4830
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 8A 8-SOIC
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4830
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.9W
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
auf Bestellung 247 Stücke - Preis und Lieferfrist anzeigen
| SIZ918DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ918
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 21000 Stücke Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ918
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 27434 Stücke - Preis und Lieferfrist anzeigen
| SIZ918DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ918
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 22314 Stücke Description: MOSFET 2N-CH 30V 16A POWERPAIR
Base Part Number: SIZ918
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 26120 Stücke - Preis und Lieferfrist anzeigen
| SIZ702DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Power - Max: 27W, 30W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ702
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 16A POWERPAIR
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Power - Max: 27W, 30W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ702
auf Bestellung 60 Stücke - Preis und Lieferfrist anzeigen
| SIZ702DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 30W
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 60 Stücke Description: MOSFET 2N-CH 30V 16A POWERPAIR
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 30W
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Lieferzeit 21-28 Tag (e)
| SI7904BDN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 6A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 972 Stücke - Preis und Lieferfrist anzeigen
| SI7904BDN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
auf Bestellung 402 Stücke Description: MOSFET 2N-CH 20V 6A 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 570 Stücke - Preis und Lieferfrist anzeigen
| SI7904BDN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 1212-8
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 402 Stücke Description: MOSFET 2N-CH 20V 6A 1212-8
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 570 Stücke - Preis und Lieferfrist anzeigen
| SI6562DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
auf Bestellung 9000 Stücke Description: MOSFET N/P-CH 20V 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 100000 Stücke - Preis und Lieferfrist anzeigen
| SI6562DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
auf Bestellung 6000 Stücke Description: MOSFET N/P-CH 20V 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 64000 Stücke - Preis und Lieferfrist anzeigen
| SI4618DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 5000 Stücke Description: MOSFET 2N-CH 30V 8A 8-SOIC
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 108776 Stücke - Preis und Lieferfrist anzeigen
| SI4618DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
auf Bestellung 5638 Stücke Description: MOSFET 2N-CH 30V 8A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 108138 Stücke - Preis und Lieferfrist anzeigen
| SI4618DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SO
auf Bestellung 5638 Stücke Description: MOSFET 2N-CH 30V 8A 8-SOIC
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.98W, 4.16W
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SO
Lieferzeit 21-28 Tag (e)
auf Bestellung 108138 Stücke - Preis und Lieferfrist anzeigen
| SIZ710DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A POWERPAIR
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Base Part Number: SIZ710
Supplier Device Package: 6-PowerPair™
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 16A POWERPAIR
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Base Part Number: SIZ710
Supplier Device Package: 6-PowerPair™
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
auf Bestellung 5729 Stücke - Preis und Lieferfrist anzeigen
| SIZ710DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A POWERPAIR
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ710
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
auf Bestellung 2861 Stücke Description: MOSFET 2N-CH 20V 16A POWERPAIR
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ710
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2868 Stücke - Preis und Lieferfrist anzeigen
| SI7998DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 25A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7998
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 25A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7998
auf Bestellung 6697 Stücke - Preis und Lieferfrist anzeigen
| SI7998DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 25A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7998
auf Bestellung 1521 Stücke Description: MOSFET 2N-CH 30V 25A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7998
Lieferzeit 21-28 Tag (e)
auf Bestellung 5176 Stücke - Preis und Lieferfrist anzeigen
| SI6924AEDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8-TSSOP
Base Part Number: SI6924
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 28V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 28V 4.1A 8-TSSOP
Base Part Number: SI6924
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 28V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
| SI4511DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 7.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
auf Bestellung 2500 Stücke Description: MOSFET N/P-CH 20V 7.2A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Lieferzeit 21-28 Tag (e)
auf Bestellung 181000 Stücke - Preis und Lieferfrist anzeigen
| SI7900AEDN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET 2N-CH 20V 6A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 19044 Stücke - Preis und Lieferfrist anzeigen
| SI7900AEDN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
auf Bestellung 8537 Stücke Description: MOSFET 2N-CH 20V 6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Lieferzeit 21-28 Tag (e)
auf Bestellung 13507 Stücke - Preis und Lieferfrist anzeigen
| SI7900AEDN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 1212-8
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 9119 Stücke Description: MOSFET 2N-CH 20V 6A 1212-8
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Lieferzeit 21-28 Tag (e)
auf Bestellung 12925 Stücke - Preis und Lieferfrist anzeigen
| SI7949DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 12000 Stücke Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 33738 Stücke - Preis und Lieferfrist anzeigen
| SI7949DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
auf Bestellung 16869 Stücke Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Lieferzeit 21-28 Tag (e)
auf Bestellung 28869 Stücke - Preis und Lieferfrist anzeigen
| SI7949DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
auf Bestellung 16869 Stücke Description: MOSFET 2P-CH 60V 3.2A PPAK SO-8
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Lieferzeit 21-28 Tag (e)
auf Bestellung 28869 Stücke - Preis und Lieferfrist anzeigen
| SI6993DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.6A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 3.6A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 4578 Stücke - Preis und Lieferfrist anzeigen
| SI7540DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7540
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Base Part Number: SI7540
| SI7222DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 6A PPAK 1212-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.8W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 40V
| SI7530DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 3A PPAK SO-8
Power - Max: 1.4W, 1.5W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
auf Bestellung 9000 Stücke Description: MOSFET N/P-CH 60V 3A PPAK SO-8
Power - Max: 1.4W, 1.5W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A, 3.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 518 Stücke - Preis und Lieferfrist anzeigen
| SI7220DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 3.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 7358 Stücke - Preis und Lieferfrist anzeigen
| SI4936ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 30V 4.4A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 187739 Stücke - Preis und Lieferfrist anzeigen
| SI4936ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
auf Bestellung 1 Stücke Description: MOSFET 2N-CH 30V 4.4A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Lieferzeit 21-28 Tag (e)
auf Bestellung 187738 Stücke - Preis und Lieferfrist anzeigen
| SIZ910DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A POWERPAIR
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
FET Type: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
auf Bestellung 3000 Stücke Description: MOSFET 2N-CH 30V 40A POWERPAIR
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
FET Type: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6776 Stücke - Preis und Lieferfrist anzeigen
| SIZ910DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A POWERPAIR
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 3388 Stücke Description: MOSFET 2N-CH 30V 40A POWERPAIR
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 6388 Stücke - Preis und Lieferfrist anzeigen
| SIZ910DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A POWERPAIR
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
auf Bestellung 3388 Stücke Description: MOSFET 2N-CH 30V 40A POWERPAIR
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6388 Stücke - Preis und Lieferfrist anzeigen
| SI7905DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 6A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V
Power - Max: 20.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7905
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 40V 6A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V
Power - Max: 20.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7905
| SI7252DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 36.7A PPAK 8SO
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
auf Bestellung 15017 Stücke - Preis und Lieferfrist anzeigen
| SI4942DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 40V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 115500 Stücke - Preis und Lieferfrist anzeigen
| SI7960DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 60V 6.2A PPAK SO-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
auf Bestellung 417 Stücke - Preis und Lieferfrist anzeigen
| SI7960DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
auf Bestellung 417 Stücke Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Lieferzeit 21-28 Tag (e)
| SI7946DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 150V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 150V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
auf Bestellung 2296 Stücke - Preis und Lieferfrist anzeigen
| 2N7002K-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 300MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 300MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
auf Bestellung 445119 Stücke - Preis und Lieferfrist anzeigen
| SI2365EDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.9A TO236
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 5.9A TO236
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 83843 Stücke - Preis und Lieferfrist anzeigen
| SI2301BDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Vgs (Max): ±8V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 2.2A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Vgs (Max): ±8V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 22327 Stücke - Preis und Lieferfrist anzeigen
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