Die Produkte vishay siliconix

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SI1403BDL-T1-E3 SI1403BDL-T1-E3 si1403bdl.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.4A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 568mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 376 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4987 Stücke - Preis und Lieferfrist anzeigen
SI1330EDL-T1-E3 SI1330EDL-T1-E3 SI1330ED.pdf Vishay Siliconix Description: MOSFET N-CH 60V 240MA SC70-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1330
Manufacturer: Vishay Siliconix
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 240MA SC70-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Base Part Number: SI1330
auf Bestellung 5890 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 240MA SOT323-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
auf Bestellung 2430 Stücke
Lieferzeit 21-28 Tag (e)
SI1401EDH-T1-GE3 SI1401EDH-T1-GE3 si1401ed.pdf Vishay Siliconix Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs (Max): ±10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 43713 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs (Max): ±10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1401
auf Bestellung 1814 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 43713 Stücke - Preis und Lieferfrist anzeigen
SI2300DS-T1-GE3 SI2300DS-T1-GE3 si2300ds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 3.6A SOT23-3
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 42722 Stücke - Preis und Lieferfrist anzeigen
SI3460DDV-T1-GE3 SI3460DDV-T1-GE3 si3460dd.pdf Vishay Siliconix Description: MOSFET N-CH 20V 7.9A 6TSOP
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI3460
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 668 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 7.9A 6TSOP
Base Part Number: SI3460
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
auf Bestellung 5516 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 668 Stücke - Preis und Lieferfrist anzeigen
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 si2307cds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50726 Stücke - Preis und Lieferfrist anzeigen
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 si2301cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.1A SOT23-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11937 Stücke - Preis und Lieferfrist anzeigen
SI2377EDS-T1-GE3 SI2377EDS-T1-GE3 si2377eds.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.4A SOT23-3
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI2377
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
auf Bestellung 57000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 77954 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 4.4A SOT23-3
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Base Part Number: SI2377
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 57498 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 77954 Stücke - Preis und Lieferfrist anzeigen
SI1302DL-T1-GE3 SI1302DL-T1-GE3 71249.pdf Vishay Siliconix Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10092 Stücke - Preis und Lieferfrist anzeigen
SI1304BDL-T1-GE3 SI1304BDL-T1-GE3 si1304bd.pdf Vishay Siliconix Description: MOSFET N-CH 30V 900MA SC70-3
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
TN0201K-T1-E3 TN0201K-T1-E3 tn0201k.pdf Vishay Siliconix Description: MOSFET N-CH 20V 420MA SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 350mW (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Base Part Number: TN0201
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11080 Stücke - Preis und Lieferfrist anzeigen
TN0200K-T1-E3 TN0200K-T1-E3 tn0200k.pdf Vishay Siliconix Description: MOSFET N-CH 20V 730MA SOT23-3
Power - Max: 350mW
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 730mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate, 2.5V Drive
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18600 Stücke - Preis und Lieferfrist anzeigen
SI2312BDS-T1-E3 SI2312BDS-T1-E3 si2312bds.pdf Vishay Siliconix Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 59263 Stücke - Preis und Lieferfrist anzeigen
SI1422DH-T1-GE3 SI1422DH-T1-GE3 si1422dh.pdf Vishay Siliconix Description: MOSFET N-CH 12V 4A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 4A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 5813 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 4A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 5813 Stücke
Lieferzeit 21-28 Tag (e)
SIA406DJ-T1-GE3 SIA406DJ-T1-GE3 sia406dj.pdf Vishay Siliconix Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 10.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 6V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA406
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3457BDV-T1-E3 SI3457BDV-T1-E3 72019.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.7A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.14W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8800EDB-T2-E1 SI8800EDB-T2-E1 si8800edb.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4MICROFOOT
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 20V 4MICROFOOT
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
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SI1021R-T1-GE3 SI1021R-T1-GE3 71410.pdf Vishay Siliconix Description: MOSFET P-CH 60V 190MA SC75A
Base Part Number: SI1021
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: MOSFET P-CH 60V 190MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1021
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Lieferzeit 21-28 Tag (e)
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SI1050X-T1-GE3 SI1050X-T1-GE3 si1050x.pdf Vishay Siliconix Description: MOSFET N-CH 8V 1.34A SC89-6
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 8V 1.34A SC89-6
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
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Lieferzeit 21-28 Tag (e)
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21+ 1.27 EUR
24+ 1.09 EUR
100+ 0.81 EUR
SI1307EDL-T1-E3 SI1307EDL-T1-E3 SI1307ED.pdf Vishay Siliconix Description: MOSFET P-CH 12V 0.85A SOT323-3
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2336DS-T1-GE3 SI2336DS-T1-GE3 si2336ds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 5.2A SOT23-3
Base Part Number: SI2336
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 30V 5.2A SOT23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI2336
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
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SI1071X-T1-GE3 SI1071X-T1-GE3 si1071x.pdf Vishay Siliconix Description: MOSFET P-CH 30V 0.96A SC89-6
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB422EDK-T1-GE3 SIB422EDK-T1-GE3 sib422edk.pdf Vishay Siliconix Description: MOSFET N-CH 20V 9A PPAK SC75-6
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 9A PPAK SC75-6
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET N-CH 20V 9A SC-75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
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SI1056X-T1-GE3 SI1056X-T1-GE3 si1056x.pdf Vishay Siliconix Description: MOSFET N-CH 20V SC-89-6
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V
Supplier Device Package: SC-89-6
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA425EDJ-T1-GE3 SIA425EDJ-T1-GE3 sia425ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.6W
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 4.5A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.6W
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 4.5A SC-70-6
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.6W
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
auf Bestellung 1374 Stücke
Lieferzeit 21-28 Tag (e)
SIB488DK-T1-GE3 SIB488DK-T1-GE3 sib488dk.pdf Vishay Siliconix Description: MOSFET N-CH 12V 9A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 9A SC75-6
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
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Vishay Siliconix Description: MOSFET N-CH 12V 9A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6038 Stücke
Lieferzeit 21-28 Tag (e)
TP0101K-T1-E3 TP0101K-T1-E3 72692.pdf Vishay Siliconix Description: MOSFET P-CH 20V 580MA SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 350mW
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate, 2.5V Drive
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
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SI2305DS-T1-E3 SI2305DS-T1-E3 70833.pdf Vishay Siliconix Description: MOSFET P-CH 8V 3.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIB433EDK-T1-GE3 SIB433EDK-T1-GE3 sib433ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 9A SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIB433
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 9A SC-75-6
Base Part Number: SIB433
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1870 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 9A SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
auf Bestellung 9893 Stücke
Lieferzeit 21-28 Tag (e)
SI1022R-T1-GE3 SI1022R-T1-GE3 71331.pdf Vishay Siliconix Description: MOSFET N-CH 60V 330MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1022
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 26980 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 330MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1022
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Lieferzeit 21-28 Tag (e)
auf Bestellung 26980 Stücke - Preis und Lieferfrist anzeigen
SI3455ADV-T1-E3 SI3455ADV-T1-E3 71090.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI2343DS-T1-E3 SI2343DS-T1-E3 72079.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.1A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2343
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 89256 Stücke - Preis und Lieferfrist anzeigen
SI3443BDV-T1-E3 SI3443BDV-T1-E3 72749.pdf техническая информация Vishay Siliconix Description: MOSFET P-CH 20V 3.6A 6TSOP
Base Part Number: SI3443
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4806 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 3.6A 6TSOP
Base Part Number: SI3443
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 7286 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4806 Stücke - Preis und Lieferfrist anzeigen
SI5440DC-T1-GE3 SI5440DC-T1-GE3 si5440dc.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6A 1206-8
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 6A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 4935 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 6A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
auf Bestellung 4935 Stücke
Lieferzeit 21-28 Tag (e)
SI3442BDV-T1-E3 SI3442BDV-T1-E3 si3442bd.pdf Vishay Siliconix Description: MOSFET N-CH 20V 3A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 10V
Power Dissipation (Max): 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3442
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 32125 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 10V
Power Dissipation (Max): 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3442
auf Bestellung 8324 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 32125 Stücke - Preis und Lieferfrist anzeigen
SIB455EDK-T1-GE3 SIB455EDK-T1-GE3 sib455ed.pdf Vishay Siliconix Description: MOSFET P-CH 12V 9A SC-75-6
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 si2319cd.pdf Vishay Siliconix Description: MOSFET P-CH 40V 4.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12037 Stücke - Preis und Lieferfrist anzeigen
SIB406EDK-T1-GE3 SIB406EDK-T1-GE3 sib406ed.pdf Vishay Siliconix Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 6A SC-75-6
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
auf Bestellung 7848 Stücke
Lieferzeit 21-28 Tag (e)
SIA427DJ-T1-GE3 SIA427DJ-T1-GE3 SIA427DJ.pdf Vishay Siliconix Description: MOSFET P-CH 8V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 8V 12A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
auf Bestellung 7948 Stücke
Lieferzeit 21-28 Tag (e)
SI1469DH-T1-E3 SI1469DH-T1-E3 si1469dh.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC70-6
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1469
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
auf Bestellung 21000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 2.7A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1469
auf Bestellung 25192 Stücke
Lieferzeit 21-28 Tag (e)
SI1054X-T1-GE3 SI1054X-T1-GE3 si1054x.pdf Vishay Siliconix Description: MOSFET N-CH 12V 1.32A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2305ADS-T1-GE3 SI2305ADS-T1-GE3 Si2305ADS.pdf Vishay Siliconix Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 73234.pdf Vishay Siliconix Description: MOSFET N-CH 30V 3.16A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1884 Stücke - Preis und Lieferfrist anzeigen
SI1403BDL-T1-E3 si1403bdl.pdf
SI1403BDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 568mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 376 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4987 Stücke - Preis und Lieferfrist anzeigen
SI1330EDL-T1-E3 SI1330ED.pdf
SI1330EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI1330
Manufacturer: Vishay Siliconix
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
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SI1330EDL-T1-E3 SI1330ED.pdf
SI1330EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Base Part Number: SI1330
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SI1330EDL-T1-E3 SI1330ED.pdf
SI1330EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT323-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
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SI1401EDH-T1-GE3 si1401ed.pdf
SI1401EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs (Max): ±10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1401EDH-T1-GE3 si1401ed.pdf
SI1401EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs (Max): ±10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1401
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SI2300DS-T1-GE3 si2300ds.pdf
SI2300DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.6A SOT23-3
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
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SI3460DDV-T1-GE3 si3460dd.pdf
SI3460DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.9A 6TSOP
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI3460
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SI3460DDV-T1-GE3 si3460dd.pdf
SI3460DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.9A 6TSOP
Base Part Number: SI3460
Manufacturer: Vishay Siliconix
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
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SI2307CDS-T1-GE3 si2307cds.pdf
SI2307CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SI2301CDS-T1-GE3 si2301cd.pdf
SI2301CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.1A SOT23-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
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SI2377EDS-T1-GE3 si2377eds.pdf
SI2377EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A SOT23-3
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI2377
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
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SI2377EDS-T1-GE3 si2377eds.pdf
SI2377EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A SOT23-3
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Base Part Number: SI2377
Manufacturer: Vishay Siliconix
Package / Case: TO-236-3, SC-59, SOT-23-3
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SI1302DL-T1-GE3 71249.pdf
SI1302DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1304BDL-T1-GE3 si1304bd.pdf
SI1304BDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 900MA SC70-3
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 900mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
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TN0201K-T1-E3 tn0201k.pdf
TN0201K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 420MA SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 350mW (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 420mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Base Part Number: TN0201
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TN0200K-T1-E3 tn0200k.pdf
TN0200K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 730MA SOT23-3
Power - Max: 350mW
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 730mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate, 2.5V Drive
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
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SI2312BDS-T1-E3 si2312bds.pdf
SI2312BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1422DH-T1-GE3 si1422dh.pdf
SI1422DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
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SI1422DH-T1-GE3 si1422dh.pdf
SI1422DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
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SI1422DH-T1-GE3 si1422dh.pdf
SI1422DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
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SIA406DJ-T1-GE3 sia406dj.pdf
SIA406DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 4.5A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 10.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 6V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA406
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3457BDV-T1-E3 72019.pdf
SI3457BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.7A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.14W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8800EDB-T2-E1 si8800edb.pdf
SI8800EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30598 Stücke - Preis und Lieferfrist anzeigen
SI8800EDB-T2-E1 si8800edb.pdf
SI8800EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
auf Bestellung 144 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 30454 Stücke - Preis und Lieferfrist anzeigen
SI1021R-T1-GE3 71410.pdf
SI1021R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC75A
Base Part Number: SI1021
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 49667 Stücke - Preis und Lieferfrist anzeigen
SI1021R-T1-GE3 71410.pdf
SI1021R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1021
auf Bestellung 12739 Stücke
Lieferzeit 21-28 Tag (e)
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SI1050X-T1-GE3 si1050x.pdf
SI1050X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12859 Stücke - Preis und Lieferfrist anzeigen
SI1050X-T1-GE3 si1050x.pdf
SI1050X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC89-6
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89 (SOT-563F)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 236mW (Ta)
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 5 V
auf Bestellung 432 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12427 Stücke - Preis und Lieferfrist anzeigen
21+ 1.27 EUR
24+ 1.09 EUR
100+ 0.81 EUR
SI1307EDL-T1-E3 SI1307ED.pdf
SI1307EDL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2336DS-T1-GE3 si2336ds.pdf
SI2336DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.2A SOT23-3
Base Part Number: SI2336
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2336DS-T1-GE3 si2336ds.pdf
SI2336DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.2A SOT23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI2336
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22079 Stücke - Preis und Lieferfrist anzeigen
SI1071X-T1-GE3 si1071x.pdf
SI1071X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SC89-6
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13.3nC @ 10V
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Rds On (Max) @ Id, Vgs: 167 mOhm @ 960mA, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB422EDK-T1-GE3 sib422edk.pdf
SIB422EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A PPAK SC75-6
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13575 Stücke - Preis und Lieferfrist anzeigen
SIB422EDK-T1-GE3 sib422edk.pdf
SIB422EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A PPAK SC75-6
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 265 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13310 Stücke - Preis und Lieferfrist anzeigen
SIB422EDK-T1-GE3 sib422ed.pdf
SIB422EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A SC-75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 7310 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6265 Stücke - Preis und Lieferfrist anzeigen
SI1056X-T1-GE3 si1056x.pdf
SI1056X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC-89-6
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 89 mOhm @ 1.32A, 4.5V
Supplier Device Package: SC-89-6
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA425EDJ-T1-GE3 sia425ed.pdf
SIA425EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.6W
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2748 Stücke - Preis und Lieferfrist anzeigen
SIA425EDJ-T1-GE3 sia425ed.pdf
SIA425EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.6W
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 1374 Stücke
Lieferzeit 21-28 Tag (e)
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SIA425EDJ-T1-GE3 sia425ed.pdf
SIA425EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC-70-6
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.6W
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
auf Bestellung 1374 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1374 Stücke - Preis und Lieferfrist anzeigen
SIB488DK-T1-GE3 sib488dk.pdf
SIB488DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 9A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SIB488DK-T1-GE3 sib488dk.pdf
SIB488DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 9A SC75-6
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 6038 Stücke
Lieferzeit 21-28 Tag (e)
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SIB488DK-T1-GE3 sib488dk.pdf
SIB488DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 9A SC75-6
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6038 Stücke
Lieferzeit 21-28 Tag (e)
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TP0101K-T1-E3 72692.pdf
TP0101K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 580MA SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 350mW
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Rds On (Max) @ Id, Vgs: 650 mOhm @ 580mA, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate, 2.5V Drive
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 315018 Stücke - Preis und Lieferfrist anzeigen
SI2305DS-T1-E3 70833.pdf
SI2305DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 3.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 66000 Stücke - Preis und Lieferfrist anzeigen
SIB433EDK-T1-GE3 sib433ed.pdf
SIB433EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIB433
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11763 Stücke - Preis und Lieferfrist anzeigen
SIB433EDK-T1-GE3 sib433ed.pdf
SIB433EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC-75-6
Base Part Number: SIB433
Package / Case: PowerPAK® SC-75-6L
Supplier Device Package: PowerPAK® SC-75-6L Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1870 Stücke
Lieferzeit 21-28 Tag (e)
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SIB433EDK-T1-GE3 sib433ed.pdf
SIB433EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
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Lieferzeit 21-28 Tag (e)
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SI1022R-T1-GE3 71331.pdf
SI1022R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 330MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1022
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SI1022R-T1-GE3 71331.pdf
SI1022R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 330MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1022
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SI3455ADV-T1-E3 71090.pdf
SI3455ADV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2343DS-T1-E3 72079.pdf
SI2343DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI2343
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3443BDV-T1-E3 техническая информация 72749.pdf
SI3443BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 6TSOP
Base Part Number: SI3443
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI3443BDV-T1-E3 техническая информация 72749.pdf
SI3443BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 6TSOP
Base Part Number: SI3443
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Cut Tape (CT)
Part Status: Active
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SI5440DC-T1-GE3 si5440dc.pdf
SI5440DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
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SI5440DC-T1-GE3 si5440dc.pdf
SI5440DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
FET Type: MOSFET N-Channel, Metal Oxide
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SI5440DC-T1-GE3 si5440dc.pdf
SI5440DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
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SI3442BDV-T1-E3 si3442bd.pdf
SI3442BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 10V
Power Dissipation (Max): 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3442
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SI3442BDV-T1-E3 si3442bd.pdf
SI3442BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3A 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 10V
Power Dissipation (Max): 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3442
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SIB455EDK-T1-GE3 sib455ed.pdf
SIB455EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A SC-75-6
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2319CDS-T1-GE3 si2319cd.pdf
SI2319CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.4A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIB406EDK-T1-GE3 sib406ed.pdf
SIB406EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIB406EDK-T1-GE3 sib406ed.pdf
SIB406EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK SC75-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 10 V
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SIB406EDK-T1-GE3 sib406ed.pdf
SIB406EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SC-75-6
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-75-6L Single
Package / Case: PowerPAK® SC-75-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 10W
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46 mOhm @ 3.9A, 4.5V
auf Bestellung 7848 Stücke
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SIA427DJ-T1-GE3 SIA427DJ.pdf
SIA427DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA427DJ-T1-GE3 SIA427DJ.pdf
SIA427DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
auf Bestellung 7948 Stücke
Lieferzeit 21-28 Tag (e)
SI1469DH-T1-E3 si1469dh.pdf
SI1469DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1469
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
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SI1469DH-T1-E3 si1469dh.pdf
SI1469DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1469
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SI1054X-T1-GE3 si1054x.pdf
SI1054X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 1.32A SC89-6
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 236mW
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 6V
FET Type: MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 8.57nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.32A, 4.5V
Drain to Source Voltage (Vdss): 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2305ADS-T1-GE3 Si2305ADS.pdf
SI2305ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
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SI2306BDS-T1-GE3 73234.pdf
SI2306BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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