Die Produkte vishay siliconix

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SI2301BDS-T1-E3 SI2301BDS-T1-E3 si2301bds.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.2A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 si2304bds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 750mW (Ta)
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SI2304BDS-T1-E3 SI2304BDS-T1-E3 si2304bds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
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SI1032R-T1-GE3 SI1032R-T1-GE3 si1032r.pdf Vishay Siliconix Description: MOSFET N-CH 20V 140MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1032
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SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 si3456ddv.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6.3A 6TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Base Part Number: SI3456
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: MOSFET N-CH 30V 6.3A 6TSOP
Base Part Number: SI3456
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SI1012R-T1-GE3 SI1012R-T1-GE3 71166.pdf Vishay Siliconix Description: MOSFET N-CH 20V 500MA SC75A
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1012
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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Vishay Siliconix Description: MOSFET N-CH 20V 500MA SC75A
Base Part Number: SI1012
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 28146 Stücke
Lieferzeit 21-28 Tag (e)
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SIP32102DB-T5-GE1 SIP32102DB-T5-GE1 sip32101.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: 12-WCSP (1.71x1.31)
Package / Case: 12-UFBGA, CSPBGA
Base Part Number: SIP321
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32103DB-T1-GE1 SIP32103DB-T1-GE1 sip32101.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Base Part Number: SIP32103
Package / Case: 12-UFBGA, WLCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIP32101EVB SIP32101EVB sip32101evaluationboardmanual.pdf Vishay Siliconix Description: EVAL BOARD FOR SIP32101
Part Status: Active
Base Part Number: SIP321
Supplied Contents: Board(s)
Utilized IC / Part: SIP32101
Function: Power Distribution Switch (Load Switch)
Type: Power Management
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Lieferzeit 21-28 Tag (e)
SIP32104DB-T1-GE1 SIP32104DB-T1-GE1 sip32101.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
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SIP32102EVB sip32101.pdf Vishay Siliconix Description: EVAL BOARD FOR SIP32102
Base Part Number: SIP321
Supplied Contents: Board(s)
Utilized IC / Part: SIP32102
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SIP32103DB-T1-GE1 SIP32103DB-T1-GE1 sip32101.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32103
Package / Case: 12-UFBGA, WLCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
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SIP32103EVB SIP32103EVB sip32101.pdf Vishay Siliconix Description: EVAL BOARD FOR SIP32103
Type: Power Management
Part Status: Active
Function: Power Distribution Switch (Load Switch)
Utilized IC / Part: SIP32103
Supplied Contents: Board(s)
Base Part Number: SIP321
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DG417LEDY-T1-GE4 DG417LEDY-T1-GE4 dg417le.pdf Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Number of Circuits: 1
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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SI9241AEY-T1-E3 SI9241AEY-T1-E3 si9241.pdf Vishay Siliconix Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Supplier Device Package: 8-SOIC
Protocol: ISO 9141
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9987CY-T1-E3 SI9987CY-T1-E3 si9987.pdf Vishay Siliconix Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: 0°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9986DY-E3 SI9986DY-E3 si9986.pdf Vishay Siliconix Description: IC MTR DRV BIPOLAR 3.8-13.2V 8SO
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9987CY-E3 SI9987CY-E3 si9987.pdf Vishay Siliconix Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: 0°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9987DY-T1-E3 SI9987DY-T1-E3 si9987.pdf Vishay Siliconix Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9987DY-E3 SI9987DY-E3 si9987.pdf Vishay Siliconix Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI9961ACY-T1-E3 si9961a.pdf Vishay Siliconix Description: IC MOTOR DRIVER 4.5V-5.5V 24SOIC
Output Configuration: Half Bridge (2)
Operating Temperature: 0°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Motor Type - AC, DC: Voice Coil Motor
Supplier Device Package: 24-SOIC
Voltage - Load: 2V ~ 14V
Technology: BiCDMOS
Applications: Media Player
Voltage - Supply: 4.5V ~ 5.5V
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SI9961ACY-E3 si9961a.pdf Vishay Siliconix Description: IC MOTOR DRIVER PAR 24SOIC
Voltage - Supply: 4.5V ~ 5.5V
Current - Output: 1.8A
Applications: Media Player
Interface: Parallel
Output Configuration: Full H-Bridge, (1) Single
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Voice Coil Motor
Supplier Device Package: 24-SOIC W
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Load: 2V ~ 14V
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SI9979DS-E3 SI9979DS-E3 si9979.pdf Vishay Siliconix Description: IC MTR DRIVER 14.5V-17.5V 48SQFP
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Part Status: Obsolete
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 48-SQFP (7x7)
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 14.5V ~ 17.5V
Output Configuration: Pre-Driver - Half Bridge (3)
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SIA928DJ-T1-GE3 SIA928DJ-T1-GE3 sia928dj.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA928
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
auf Bestellung 1515 Stücke
Lieferzeit 21-28 Tag (e)
SUM110N04-2M1P-E3 SUM110N04-2M1P-E3 sum110n0.pdf Vishay Siliconix Description: MOSFET N-CH 40V 29A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 312W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUM110N04-05H-E3 SUM110N04-05H-E3 73131.pdf Vishay Siliconix Description: MOSFET N-CH 40V 110A D2PAK
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM110N04-2M3L-E3 SUM110N04-2M3L-E3 73040.pdf Vishay Siliconix Description: MOSFET N-CH 40V 110A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7172ADP-T1-RE3 SI7172ADP-T1-RE3 si7172adp.pdf Vishay Siliconix Description: MOSFET N-CH 200V PPAK SO-8
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
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IRF840ASTRLPBF IRF840ASTRLPBF sihf840a.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SI1551DL-T1-E3 SI1551DL-T1-E3 si1551dl.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5933CDC-T1-GE3 SI5933CDC-T1-GE3 si5933cd.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 3.7A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
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Vishay Siliconix Description: MOSFET 2P-CH 20V 3.7A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2P-CH 20V 3.7A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
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Lieferzeit 21-28 Tag (e)
SI1903DL-T1-GE3 SI1903DL-T1-GE3 si1903dl.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 0.41A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
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SI3850ADV-T1-GE3 SI3850ADV-T1-GE3 si3850ad.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 1.4A 6-TSOP
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel, Common Drain
Power - Max: 1.08W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB900EDK-T1-GE3 SIB900EDK-T1-GE3 sib900ed.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB900
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB900
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Vishay Siliconix Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI1563DH-T1-GE3 SI1563DH-T1-GE3 71963.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 1.13A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA921EDJ-T1-GE3 SIA921EDJ-T1-GE3 sia921ed.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.5A SC70-6
Base Part Number: SIA921
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: MOSFET 2P-CH 20V 4.5A SC70-6
Base Part Number: SIA921
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIA778DJ-T1-GE3 SIA778DJ-T1-GE3 sia778dj.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V/20V SC70-6
Base Part Number: SIA778
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W, 5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 12V/20V SC70-6
Power - Max: 6.5W, 5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Base Part Number: SIA778
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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Vishay Siliconix Description: MOSFET 2N-CH 12V/20V SC70-6
Power - Max: 6.5W, 5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Base Part Number: SIA778
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SI4532CDY-T1-GE3 SI4532CDY-T1-GE3 si4532cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 6A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4532
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 sia517dj.pdf Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: N and P-Channel
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4210DY-T1-GE3 SI4210DY-T1-GE3 si4210dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.7W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
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Vishay Siliconix Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.7W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.7W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
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SI3585DV-T1-GE3 SI3585DV-T1-GE3 71184711.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 2A 6-TSOP
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIS902DN-T1-GE3 SIS902DN-T1-GE3 sis902dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 75V 4A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.4W
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 75V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9945BDY-T1-GE3 SI9945BDY-T1-GE3 si9945bdy.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4906DY-T1-GE3 SI4906DY-T1-GE3 73867.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 6.6A 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 40V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3900DV-T1-GE3 SI3900DV-T1-GE3 71178.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 2A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 20V 2A 6-TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
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Lieferzeit 21-28 Tag (e)
SI5903DC-T1-E3 SI5903DC-T1-E3 71054.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 2.1A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5904DC-T1-GE3 SI5904DC-T1-GE3 71065.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 3.1A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7501DN-T1-GE3 SI7501DN-T1-GE3 72173.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 5.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
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SI7900AEDN-T1-GE3 SI7900AEDN-T1-GE3 si7900aedn.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
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Lieferzeit 21-28 Tag (e)
SI4670DY-T1-E3 SI4670DY-T1-E3 si4670dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI7228DN-T1-GE3 SI7228DN-T1-GE3 si7228dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 26A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7923DN-T1-GE3 SI7923DN-T1-GE3 72622.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 4.3A 1212-8
Base Part Number: SI7923
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2P-CH 30V 4.3A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7923
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
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SIZ920DT-T1-GE3 SIZ920DT-T1-GE3 siz920dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 40A PWRPAIR
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
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Vishay Siliconix Description: MOSFET 2N-CH 30V 40A PWRPAIR
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W, 100W
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 30V 40A PWRPAIR
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
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SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 siz900dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 24A POWERPAIR
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 6-PowerPair™
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2N-CH 30V 24A POWERPAIR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
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Lieferzeit 21-28 Tag (e)
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SI2301BDS-T1-E3 si2301bds.pdf
SI2301BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2304BDS-T1-GE3 si2304bds.pdf
SI2304BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 750mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2304BDS-T1-E3 si2304bds.pdf
SI2304BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1032R-T1-GE3 si1032r.pdf
SI1032R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC75A
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs (Max): ±6V
Power Dissipation (Max): 250mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-75A
Package / Case: SC-75, SOT-416
Base Part Number: SI1032
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3456DDV-T1-GE3 si3456ddv.pdf
SI3456DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.3A 6TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Base Part Number: SI3456
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3456DDV-T1-GE3 si3456ddv.pdf
SI3456DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.3A 6TSOP
Base Part Number: SI3456
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI1012R-T1-GE3 71166.pdf
SI1012R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC75A
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI1012
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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Lieferzeit 21-28 Tag (e)
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SI1012R-T1-GE3 71166.pdf
SI1012R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC75A
Base Part Number: SI1012
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 150mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 28146 Stücke
Lieferzeit 21-28 Tag (e)
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SIP32102DB-T5-GE1 sip32101.pdf
SIP32102DB-T5-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: 12-WCSP (1.71x1.31)
Package / Case: 12-UFBGA, CSPBGA
Base Part Number: SIP321
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32103DB-T1-GE1 sip32101.pdf
SIP32103DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Base Part Number: SIP32103
Package / Case: 12-UFBGA, WLCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIP32101EVB sip32101evaluationboardmanual.pdf
SIP32101EVB
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIP32101
Part Status: Active
Base Part Number: SIP321
Supplied Contents: Board(s)
Utilized IC / Part: SIP32101
Function: Power Distribution Switch (Load Switch)
Type: Power Management
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Lieferzeit 21-28 Tag (e)
SIP32104DB-T1-GE1 sip32101.pdf
SIP32104DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32102EVB sip32101.pdf
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIP32102
Base Part Number: SIP321
Supplied Contents: Board(s)
Utilized IC / Part: SIP32102
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SIP32103DB-T1-GE1 sip32101.pdf
SIP32103DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Rds On (Typ): 6.5mOhm
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.3V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32103
Package / Case: 12-UFBGA, WLCSP
Supplier Device Package: 12-WCSP (1.71x1.31)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Features: Slew Rate Controlled
Input Type: Non-Inverting
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIP32103EVB sip32101.pdf
SIP32103EVB
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIP32103
Type: Power Management
Part Status: Active
Function: Power Distribution Switch (Load Switch)
Utilized IC / Part: SIP32103
Supplied Contents: Board(s)
Base Part Number: SIP321
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG417LEDY-T1-GE4 dg417le.pdf
DG417LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Number of Circuits: 1
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9241AEY-T1-E3 si9241.pdf
SI9241AEY-T1-E3
Hersteller: Vishay Siliconix
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Part Status: Obsolete
Duplex: Half
Supplier Device Package: 8-SOIC
Protocol: ISO 9141
Number of Drivers/Receivers: 1/1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C
Type: Transceiver
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9987CY-T1-E3 si9987.pdf
SI9987CY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: 0°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9986DY-E3 si9986.pdf
SI9986DY-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPOLAR 3.8-13.2V 8SO
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9987CY-E3 si9987.pdf
SI9987CY-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: 0°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9987DY-T1-E3 si9987.pdf
SI9987DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9987DY-E3 si9987.pdf
SI9987DY-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPLR 3.8-13.2V 8SOIC
Part Status: Obsolete
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Supplier Device Package: 8-SOIC
Voltage - Load: 3.8V ~ 13.2V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 3.8V ~ 13.2V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9961ACY-T1-E3 si9961a.pdf
Hersteller: Vishay Siliconix
Description: IC MOTOR DRIVER 4.5V-5.5V 24SOIC
Output Configuration: Half Bridge (2)
Operating Temperature: 0°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.8A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Motor Type - AC, DC: Voice Coil Motor
Supplier Device Package: 24-SOIC
Voltage - Load: 2V ~ 14V
Technology: BiCDMOS
Applications: Media Player
Voltage - Supply: 4.5V ~ 5.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9961ACY-E3 si9961a.pdf
Hersteller: Vishay Siliconix
Description: IC MOTOR DRIVER PAR 24SOIC
Voltage - Supply: 4.5V ~ 5.5V
Current - Output: 1.8A
Applications: Media Player
Interface: Parallel
Output Configuration: Full H-Bridge, (1) Single
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Voice Coil Motor
Supplier Device Package: 24-SOIC W
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Load: 2V ~ 14V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9979DS-E3 si9979.pdf
SI9979DS-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRIVER 14.5V-17.5V 48SQFP
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Part Status: Obsolete
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 48-SQFP (7x7)
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 14.5V ~ 17.5V
Output Configuration: Pre-Driver - Half Bridge (3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA928DJ-T1-GE3 sia928dj.pdf
SIA928DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA928
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
auf Bestellung 1515 Stücke
Lieferzeit 21-28 Tag (e)
SUM110N04-2M1P-E3 sum110n0.pdf
SUM110N04-2M1P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 29A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 312W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3700 Stücke - Preis und Lieferfrist anzeigen
SUM110N04-05H-E3 73131.pdf
SUM110N04-05H-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 110A D2PAK
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM110N04-2M3L-E3 73040.pdf
SUM110N04-2M3L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 110A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7172ADP-T1-RE3 si7172adp.pdf
SI7172ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V PPAK SO-8
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3656 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8046 Stücke - Preis und Lieferfrist anzeigen
IRF840ASTRLPBF sihf840a.pdf
IRF840ASTRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 730 Stücke
Lieferzeit 21-28 Tag (e)
SI1551DL-T1-E3 si1551dl.pdf
SI1551DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 290mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5933CDC-T1-GE3 si5933cd.pdf
SI5933CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.7A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
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SI5933CDC-T1-GE3 si5933cd.pdf
SI5933CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.7A 1206-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
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SI5933CDC-T1-GE3 si5933cd.pdf
SI5933CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.7A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
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SI1903DL-T1-GE3 si1903dl.pdf
SI1903DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.41A SC70-6
FET Type: 2 P-Channel (Dual)
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 270mW
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 410mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3850ADV-T1-GE3 si3850ad.pdf
SI3850ADV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.4A 6-TSOP
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel, Common Drain
Power - Max: 1.08W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIB900EDK-T1-GE3 sib900ed.pdf
SIB900EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB900
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIB900EDK-T1-GE3 sib900ed.pdf
SIB900EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Supplier Device Package: PowerPAK® SC-75-6L Dual
Base Part Number: SIB900
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SIB900EDK-T1-GE3 sib900ed.pdf
SIB900EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.5A SC-75-6
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI1563DH-T1-GE3 71963.pdf
SI1563DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 1.13A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA921EDJ-T1-GE3 sia921ed.pdf
SIA921EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Base Part Number: SIA921
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIA921EDJ-T1-GE3 sia921ed.pdf
SIA921EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Base Part Number: SIA921
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIA778DJ-T1-GE3 sia778dj.pdf
SIA778DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V/20V SC70-6
Base Part Number: SIA778
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W, 5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA778DJ-T1-GE3 sia778dj.pdf
SIA778DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V/20V SC70-6
Power - Max: 6.5W, 5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Base Part Number: SIA778
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SIA778DJ-T1-GE3 sia778dj.pdf
SIA778DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V/20V SC70-6
Power - Max: 6.5W, 5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 1.5A
Drain to Source Voltage (Vdss): 12V, 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Base Part Number: SIA778
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SI4532CDY-T1-GE3 si4532cd.pdf
SI4532CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6A 8-SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI4532
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA517DJ-T1-GE3 sia517dj.pdf
SIA517DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Type: N and P-Channel
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4210DY-T1-GE3 si4210dy.pdf
SI4210DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.7W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
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SI4210DY-T1-GE3 si4210dy.pdf
SI4210DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.7W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
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SI4210DY-T1-GE3 si4210dy.pdf
SI4210DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.5A 8-SOIC
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.7W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 30V
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SI3585DV-T1-GE3 71184711.pdf
SI3585DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2A 6-TSOP
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIS902DN-T1-GE3 sis902dn.pdf
SIS902DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 75V 4A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15.4W
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 38V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 75V
FET Type: 2 N-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9945BDY-T1-GE3 si9945bdy.pdf
SI9945BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4906DY-T1-GE3 73867.pdf
SI4906DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6.6A 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 40V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3900DV-T1-GE3 71178.pdf
SI3900DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6-TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
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SI3900DV-T1-GE3 71178.pdf
SI3900DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6-TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
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SI5903DC-T1-E3 71054.pdf
SI5903DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 206018 Stücke - Preis und Lieferfrist anzeigen
SI5904DC-T1-GE3 71065.pdf
SI5904DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.1A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7501DN-T1-GE3 72173.pdf
SI7501DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25500 Stücke - Preis und Lieferfrist anzeigen
SI7900AEDN-T1-GE3 si7900aedn.pdf
SI7900AEDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7900AEDN-T1-GE3 si7900aedn.pdf
SI7900AEDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6 Stücke - Preis und Lieferfrist anzeigen
SI7900AEDN-T1-GE3 72287.pdf
SI7900AEDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
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Lieferzeit 21-28 Tag (e)
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SI4670DY-T1-E3 si4670dy.pdf
SI4670DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4670DY-T1-E3 si4670dy.pdf
SI4670DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 592 Stücke
Lieferzeit 21-28 Tag (e)
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SI7228DN-T1-GE3 si7228dn.pdf
SI7228DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 26A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1625 Stücke - Preis und Lieferfrist anzeigen
SI7923DN-T1-GE3 72622.pdf
SI7923DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A 1212-8
Base Part Number: SI7923
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
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SI7923DN-T1-GE3 72622.pdf
SI7923DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7923
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
auf Bestellung 6444 Stücke
Lieferzeit 21-28 Tag (e)
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SIZ920DT-T1-GE3 siz920dt.pdf
SIZ920DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A PWRPAIR
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIZ920DT-T1-GE3 siz920dt.pdf
SIZ920DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A PWRPAIR
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W, 100W
auf Bestellung 2382 Stücke
Lieferzeit 21-28 Tag (e)
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SIZ920DT-T1-GE3 siz920dt.pdf
SIZ920DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 40A PWRPAIR
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 39W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
auf Bestellung 2382 Stücke
Lieferzeit 21-28 Tag (e)
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SIZ900DT-T1-GE3 siz900dt.pdf
SIZ900DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A POWERPAIR
FET Type: 2 N-Channel (Half Bridge)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Supplier Device Package: 6-PowerPair™
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5800 Stücke - Preis und Lieferfrist anzeigen
SIZ900DT-T1-GE3 siz900dt.pdf
SIZ900DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A POWERPAIR
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W, 100W
Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 19.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A, 28A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 6-PowerPair™
Package / Case: 6-PowerPair™
auf Bestellung 2900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2900 Stücke - Preis und Lieferfrist anzeigen
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