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IRFBC40ASPBF IRFBC40ASPBF Vishay Siliconix sihfbc40.pdf Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 147 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.27 EUR
50+ 8.14 EUR
100+ 6.98 EUR
Mindestbestellmenge: 3
IRC640PBF Vishay Siliconix DS_417_IRC640.pdf Description: MOSFET N-CH 200V 18A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IRFIBC40GLCPBF IRFIBC40GLCPBF Vishay Siliconix doc?91181 Description: MOSFET N-CH 600V 3.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.1A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
IRFB16N50KPBF IRFB16N50KPBF Vishay Siliconix IRFB16N50K, SiHFB16N50K.pdf Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IRFIB8N50KPBF IRFIB8N50KPBF Vishay Siliconix irfib8n50k.pdf Description: MOSFET N-CH 500V 6.7A TO220FP
Produkt ist nicht verfügbar
IRFB18N50KPBF IRFB18N50KPBF Vishay Siliconix irfb18n50k.pdf Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Produkt ist nicht verfügbar
IRFU110PBF IRFU110PBF Vishay Siliconix sihfu110.pdf Description: MOSFET N-CH 100V 4.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2456 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.7 EUR
75+ 2.17 EUR
150+ 1.72 EUR
525+ 1.46 EUR
1050+ 1.19 EUR
2025+ 1.12 EUR
Mindestbestellmenge: 10
IRFU120PBF IRFU120PBF Vishay Siliconix sihfr120.pdf description Description: MOSFET N-CH 100V 7.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1015 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.44 EUR
75+ 1.97 EUR
150+ 1.56 EUR
525+ 1.32 EUR
Mindestbestellmenge: 11
IRFR120PBF IRFR120PBF Vishay Siliconix sihfr120.pdf Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 6922 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.83 EUR
75+ 2.28 EUR
150+ 1.8 EUR
525+ 1.53 EUR
1050+ 1.25 EUR
2025+ 1.17 EUR
5025+ 1.12 EUR
Mindestbestellmenge: 10
IRFU210PBF IRFU210PBF Vishay Siliconix sihfr210.pdf Description: MOSFET N-CH 200V 2.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 11870 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.17 EUR
75+ 2.54 EUR
150+ 2.02 EUR
525+ 1.71 EUR
1050+ 1.39 EUR
2025+ 1.31 EUR
5025+ 1.25 EUR
10050+ 1.19 EUR
Mindestbestellmenge: 9
IRFU014PBF IRFU014PBF Vishay Siliconix sihfr014.pdf Description: MOSFET N-CH 60V 7.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 2686 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.17 EUR
75+ 2.54 EUR
150+ 2.02 EUR
525+ 1.71 EUR
1050+ 1.39 EUR
2025+ 1.31 EUR
Mindestbestellmenge: 9
IRFU214PBF IRFU214PBF Vishay Siliconix sihfr214.pdf Description: MOSFET N-CH 250V 2.2A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 3153 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.17 EUR
75+ 2.54 EUR
150+ 2.02 EUR
525+ 1.71 EUR
1050+ 1.39 EUR
2025+ 1.31 EUR
Mindestbestellmenge: 9
IRLU014PBF IRLU014PBF Vishay Siliconix sihlr014.pdf Description: MOSFET N-CH 60V 7.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 2772 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
75+ 2.39 EUR
150+ 1.89 EUR
525+ 1.61 EUR
1050+ 1.31 EUR
2025+ 1.23 EUR
Mindestbestellmenge: 9
IRFR214PBF IRFR214PBF Vishay Siliconix sihfr214.pdf Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRFR010PBF IRFR010PBF Vishay Siliconix sihfr010.pdf Description: MOSFET N-CH 50V 8.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 3015 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 3.18 EUR
100+ 2.48 EUR
500+ 2.05 EUR
1000+ 1.62 EUR
2000+ 1.51 EUR
Mindestbestellmenge: 8
IRLU110PBF IRLU110PBF Vishay Siliconix sihlr110.pdf Description: MOSFET N-CH 100V 4.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 7172 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
75+ 2.76 EUR
150+ 2.19 EUR
525+ 1.86 EUR
1050+ 1.51 EUR
2025+ 1.42 EUR
5025+ 1.36 EUR
Mindestbestellmenge: 8
IRFU310PBF IRFU310PBF Vishay Siliconix sihfr310.pdf Description: MOSFET N-CH 400V 1.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFU9014PBF IRFU9014PBF Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 60V 5.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1552 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.48 EUR
75+ 2.8 EUR
150+ 2.22 EUR
525+ 1.88 EUR
1050+ 1.53 EUR
Mindestbestellmenge: 8
IRFU9010PBF IRFU9010PBF Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 50V 5.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 827 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.48 EUR
75+ 2.8 EUR
150+ 2.22 EUR
525+ 1.88 EUR
Mindestbestellmenge: 8
IRFU9110PBF IRFU9110PBF Vishay Siliconix sihfr911.pdf Description: MOSFET P-CH 100V 3.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1804 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.64 EUR
75+ 2.93 EUR
150+ 2.32 EUR
525+ 1.97 EUR
1050+ 1.6 EUR
Mindestbestellmenge: 8
IRFU020PBF IRFU020PBF Vishay Siliconix sihfr020.pdf Description: MOSFET N-CH 60V 14A TO251AA
Produkt ist nicht verfügbar
IRFR9214PBF IRFR9214PBF Vishay Siliconix sihfr921.pdf Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 1698 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
10+ 2.93 EUR
100+ 2.33 EUR
500+ 1.98 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 8
IRFU9214PBF IRFU9214PBF Vishay Siliconix sihfr921.pdf Description: MOSFET P-CH 250V 2.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 1441 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
75+ 2.84 EUR
150+ 2.34 EUR
525+ 1.98 EUR
1050+ 1.68 EUR
Mindestbestellmenge: 8
IRFU024PBF IRFU024PBF Vishay Siliconix sihfr024.pdf Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 846 Stücke:
Lieferzeit 21-28 Tag (e)
7+4 EUR
75+ 3.22 EUR
150+ 2.65 EUR
525+ 2.24 EUR
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IRFU9310PBF IRFU9310PBF Vishay Siliconix sihfr931.pdf Description: MOSFET P-CH 400V 1.8A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 4265 Stücke:
Lieferzeit 21-28 Tag (e)
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75+ 2.9 EUR
150+ 2.39 EUR
525+ 2.02 EUR
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2025+ 1.63 EUR
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IRFU420PBF IRFU420PBF Vishay Siliconix sihfr420.pdf Description: MOSFET N-CH 500V 2.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 2905 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.09 EUR
75+ 2.49 EUR
150+ 1.97 EUR
525+ 1.67 EUR
1050+ 1.36 EUR
2025+ 1.28 EUR
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IRFU320PBF IRFU320PBF Vishay Siliconix sihfr320.pdf Description: MOSFET N-CH 400V 3.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2342 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.48 EUR
75+ 2.8 EUR
150+ 2.22 EUR
525+ 1.88 EUR
1050+ 1.53 EUR
2025+ 1.44 EUR
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IRFU9210PBF IRFU9210PBF Vishay Siliconix sihfr921.pdf Description: MOSFET P-CH 200V 1.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2725 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.82 EUR
10+ 3.17 EUR
100+ 2.53 EUR
500+ 2.14 EUR
1000+ 1.81 EUR
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IRLU024PBF IRLU024PBF Vishay Siliconix sihlr024.pdf description Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 2565 Stücke:
Lieferzeit 21-28 Tag (e)
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75+ 3.16 EUR
150+ 2.6 EUR
525+ 2.2 EUR
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2025+ 1.77 EUR
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IRFU9120PBF IRFU9120PBF Vishay Siliconix sihfr912.pdf Description: MOSFET P-CH 100V 5.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 2687 Stücke:
Lieferzeit 21-28 Tag (e)
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75+ 3.28 EUR
150+ 2.7 EUR
525+ 2.28 EUR
1050+ 1.94 EUR
2025+ 1.84 EUR
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IRFU9024PBF IRFU9024PBF Vishay Siliconix sihfr902.pdf Description: MOSFET P-CH 60V 8.8A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3054 Stücke:
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75+ 3.01 EUR
150+ 2.39 EUR
525+ 2.02 EUR
1050+ 1.65 EUR
2025+ 1.55 EUR
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IRFU9020PBF IRFU9020PBF Vishay Siliconix sihfr902.pdf Description: MOSFET P-CH 50V 9.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 8336 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.32 EUR
75+ 3.47 EUR
150+ 2.85 EUR
525+ 2.42 EUR
1050+ 2.05 EUR
2025+ 1.95 EUR
5025+ 1.87 EUR
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IRFU9220PBF IRFU9220PBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFUC20PBF Vishay Siliconix sihfrc20.pdf description Description: MOSFET N-CH 600V 2A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
7+4 EUR
Mindestbestellmenge: 7
IRFD210PBF IRFD210PBF Vishay Siliconix sihfd210.pdf Description: MOSFET N-CH 200V 600MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 13621 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
2500+ 1.32 EUR
5000+ 1.26 EUR
10000+ 1.2 EUR
Mindestbestellmenge: 9
IRFD110PBF IRFD110PBF Vishay Siliconix sihfd110.pdf Description: MOSFET N-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 21233 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.9 EUR
10+ 3.18 EUR
100+ 2.48 EUR
500+ 2.1 EUR
1000+ 1.71 EUR
2000+ 1.61 EUR
5000+ 1.53 EUR
10000+ 1.46 EUR
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IRFD014PBF IRFD014PBF Vishay Siliconix sihfd014.pdf Description: MOSFET N-CH 60V 1.7A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
auf Bestellung 421 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
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IRFD120PBF IRFD120PBF Vishay Siliconix sihfd120.pdf Description: MOSFET N-CH 100V 1.3A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 3320 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.2 EUR
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100+ 2.04 EUR
2500+ 1.32 EUR
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IRFD9014PBF IRFD9014PBF Vishay Siliconix sihfd901.pdf Description: MOSFET P-CH 60V 1.1A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 660mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 8392 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
2500+ 1.32 EUR
5000+ 1.26 EUR
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IRFD214PBF IRFD214PBF Vishay Siliconix sihfd214.pdf Description: MOSFET N-CH 250V 450MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRFD9010PBF IRFD9010PBF Vishay Siliconix sihfd901.pdf Description: MOSFET P-CH 50V 1.1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 2797 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
500+ 1.73 EUR
1000+ 1.41 EUR
2000+ 1.32 EUR
Mindestbestellmenge: 9
IRFD010PBF IRFD010PBF Vishay Siliconix IRFD010,%20012.pdf Description: MOSFET N-CH 50V 1.7A 4DIP
Produkt ist nicht verfügbar
IRFD224PBF IRFD224PBF Vishay Siliconix sihfd224.pdf Description: MOSFET N-CH 250V 630MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2250 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.82 EUR
100+ 2.19 EUR
500+ 1.86 EUR
1000+ 1.51 EUR
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IRFD220PBF IRFD220PBF Vishay Siliconix sihfd220.pdf Description: MOSFET N-CH 200V 800MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2878 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.82 EUR
100+ 2.19 EUR
2500+ 1.42 EUR
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IRLD014PBF IRLD014PBF Vishay Siliconix sihld014.pdf Description: MOSFET N-CH 60V 1.7A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 6986 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 2.95 EUR
100+ 2.29 EUR
500+ 1.94 EUR
1000+ 1.58 EUR
2000+ 1.49 EUR
5000+ 1.42 EUR
Mindestbestellmenge: 8
IRFD310PBF IRFD310PBF Vishay Siliconix sihfd310.pdf Description: MOSFET N-CH 400V 350MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 210mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2315 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.08 EUR
100+ 2.39 EUR
Mindestbestellmenge: 7
IRFD9110PBF IRFD9110PBF Vishay Siliconix sihfd911.pdf Description: MOSFET P-CH 100V 700MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 3319 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.77 EUR
10+ 3.08 EUR
100+ 2.39 EUR
2500+ 1.56 EUR
Mindestbestellmenge: 7
IRFD9120PBF IRFD9120PBF Vishay Siliconix sihfd912.pdf Description: MOSFET P-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 53140 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 3.01 EUR
100+ 2.39 EUR
500+ 2.03 EUR
1000+ 1.72 EUR
2000+ 1.63 EUR
5000+ 1.57 EUR
10000+ 1.52 EUR
Mindestbestellmenge: 8
IRFD9024PBF IRFD9024PBF Vishay Siliconix sihfd902.pdf Description: MOSFET P-CH 60V 1.6A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 1735 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.87 EUR
10+ 3.21 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 7
IRFD9020PBF IRFD9020PBF Vishay Siliconix sihfd902.pdf Description: MOSFET P-CH 60V 1.6A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 4310 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.87 EUR
10+ 3.21 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
2000+ 1.74 EUR
Mindestbestellmenge: 7
IRFD024PBF IRFD024PBF Vishay Siliconix sihfd024.pdf Description: MOSFET N-CH 60V 2.5A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 3405 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
2500+ 1.77 EUR
Mindestbestellmenge: 7
IRFD9210PBF IRFD9210PBF Vishay Siliconix sihfd921.pdf Description: MOSFET P-CH 200V 400MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 6225 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
2500+ 1.77 EUR
5000+ 1.71 EUR
Mindestbestellmenge: 7
IRLD110PBF IRLD110PBF Vishay Siliconix sihld110.pdf Description: MOSFET N-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2007 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.26 EUR
100+ 2.6 EUR
500+ 2.2 EUR
1000+ 1.86 EUR
2000+ 1.77 EUR
Mindestbestellmenge: 7
IRLD120PBF IRLD120PBF Vishay Siliconix sihld120.pdf Description: MOSFET N-CH 100V 1.3A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.03 EUR
10+ 3.36 EUR
100+ 2.67 EUR
Mindestbestellmenge: 7
IRFD320PBF IRFD320PBF Vishay Siliconix sihfd320.pdf Description: MOSFET N-CH 400V 490MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 210mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.29 EUR
10+ 3.56 EUR
100+ 2.84 EUR
Mindestbestellmenge: 7
IRLD024PBF IRLD024PBF Vishay Siliconix sihld24.pdf Description: MOSFET N-CH 60V 2.5A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 11511 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.52 EUR
10+ 3.74 EUR
100+ 2.98 EUR
500+ 2.52 EUR
1000+ 2.14 EUR
2000+ 2.03 EUR
5000+ 1.96 EUR
10000+ 1.89 EUR
Mindestbestellmenge: 6
IRFDC20PBF IRFDC20PBF Vishay Siliconix sihfdc20.pdf Description: MOSFET N-CH 600V 320MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 5886 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.23 EUR
10+ 4.34 EUR
100+ 3.45 EUR
500+ 2.92 EUR
1000+ 2.48 EUR
2000+ 2.35 EUR
5000+ 2.27 EUR
Mindestbestellmenge: 5
IRFD9220PBF IRFD9220PBF Vishay Siliconix sihfd922.pdf Description: MOSFET P-CH 200V 560MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 560mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9014TRPBF IRFR9014TRPBF Vishay Siliconix sihfr901.pdf Description: MOSFET P-CH 60V 5.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 5961 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.57 EUR
13+ 2.1 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
IRFL110TRPBF IRFL110TRPBF Vishay Siliconix sihfl110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 13776 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.16 EUR
14+ 1.87 EUR
100+ 1.29 EUR
500+ 1.08 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
IRFBC40ASPBF sihfbc40.pdf
IRFBC40ASPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 147 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.27 EUR
50+ 8.14 EUR
100+ 6.98 EUR
Mindestbestellmenge: 3
IRC640PBF DS_417_IRC640.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
FET Feature: Current Sensing
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-5
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
IRFIBC40GLCPBF doc?91181
IRFIBC40GLCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 3.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.1A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
IRFB16N50KPBF IRFB16N50K, SiHFB16N50K.pdf
IRFB16N50KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Produkt ist nicht verfügbar
IRFIB8N50KPBF irfib8n50k.pdf
IRFIB8N50KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 6.7A TO220FP
Produkt ist nicht verfügbar
IRFB18N50KPBF irfb18n50k.pdf
IRFB18N50KPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
Produkt ist nicht verfügbar
IRFU110PBF sihfu110.pdf
IRFU110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2456 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.7 EUR
75+ 2.17 EUR
150+ 1.72 EUR
525+ 1.46 EUR
1050+ 1.19 EUR
2025+ 1.12 EUR
Mindestbestellmenge: 10
IRFU120PBF description sihfr120.pdf
IRFU120PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1015 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.44 EUR
75+ 1.97 EUR
150+ 1.56 EUR
525+ 1.32 EUR
Mindestbestellmenge: 11
IRFR120PBF sihfr120.pdf
IRFR120PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 6922 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.83 EUR
75+ 2.28 EUR
150+ 1.8 EUR
525+ 1.53 EUR
1050+ 1.25 EUR
2025+ 1.17 EUR
5025+ 1.12 EUR
Mindestbestellmenge: 10
IRFU210PBF sihfr210.pdf
IRFU210PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 11870 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.17 EUR
75+ 2.54 EUR
150+ 2.02 EUR
525+ 1.71 EUR
1050+ 1.39 EUR
2025+ 1.31 EUR
5025+ 1.25 EUR
10050+ 1.19 EUR
Mindestbestellmenge: 9
IRFU014PBF sihfr014.pdf
IRFU014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 2686 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.17 EUR
75+ 2.54 EUR
150+ 2.02 EUR
525+ 1.71 EUR
1050+ 1.39 EUR
2025+ 1.31 EUR
Mindestbestellmenge: 9
IRFU214PBF sihfr214.pdf
IRFU214PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 3153 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.17 EUR
75+ 2.54 EUR
150+ 2.02 EUR
525+ 1.71 EUR
1050+ 1.39 EUR
2025+ 1.31 EUR
Mindestbestellmenge: 9
IRLU014PBF sihlr014.pdf
IRLU014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 2772 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
75+ 2.39 EUR
150+ 1.89 EUR
525+ 1.61 EUR
1050+ 1.31 EUR
2025+ 1.23 EUR
Mindestbestellmenge: 9
IRFR214PBF sihfr214.pdf
IRFR214PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRFR010PBF sihfr010.pdf
IRFR010PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 8.2A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 3015 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 3.18 EUR
100+ 2.48 EUR
500+ 2.05 EUR
1000+ 1.62 EUR
2000+ 1.51 EUR
Mindestbestellmenge: 8
IRLU110PBF sihlr110.pdf
IRLU110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 7172 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
75+ 2.76 EUR
150+ 2.19 EUR
525+ 1.86 EUR
1050+ 1.51 EUR
2025+ 1.42 EUR
5025+ 1.36 EUR
Mindestbestellmenge: 8
IRFU310PBF sihfr310.pdf
IRFU310PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
IRFU9014PBF sihfr901.pdf
IRFU9014PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 1552 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.48 EUR
75+ 2.8 EUR
150+ 2.22 EUR
525+ 1.88 EUR
1050+ 1.53 EUR
Mindestbestellmenge: 8
IRFU9010PBF sihfr901.pdf
IRFU9010PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 5.3A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 827 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.48 EUR
75+ 2.8 EUR
150+ 2.22 EUR
525+ 1.88 EUR
Mindestbestellmenge: 8
IRFU9110PBF sihfr911.pdf
IRFU9110PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 3.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1804 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.64 EUR
75+ 2.93 EUR
150+ 2.32 EUR
525+ 1.97 EUR
1050+ 1.6 EUR
Mindestbestellmenge: 8
IRFU020PBF sihfr020.pdf
IRFU020PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO251AA
Produkt ist nicht verfügbar
IRFR9214PBF sihfr921.pdf
IRFR9214PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 1698 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
10+ 2.93 EUR
100+ 2.33 EUR
500+ 1.98 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 8
IRFU9214PBF sihfr921.pdf
IRFU9214PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 250V 2.7A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.7A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
auf Bestellung 1441 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
75+ 2.84 EUR
150+ 2.34 EUR
525+ 1.98 EUR
1050+ 1.68 EUR
Mindestbestellmenge: 8
IRFU024PBF sihfr024.pdf
IRFU024PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 846 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4 EUR
75+ 3.22 EUR
150+ 2.65 EUR
525+ 2.24 EUR
Mindestbestellmenge: 7
IRFU9310PBF sihfr931.pdf
IRFU9310PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 4265 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
75+ 2.9 EUR
150+ 2.39 EUR
525+ 2.02 EUR
1050+ 1.71 EUR
2025+ 1.63 EUR
Mindestbestellmenge: 8
IRFU420PBF sihfr420.pdf
IRFU420PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 2905 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.09 EUR
75+ 2.49 EUR
150+ 1.97 EUR
525+ 1.67 EUR
1050+ 1.36 EUR
2025+ 1.28 EUR
Mindestbestellmenge: 9
IRFU320PBF sihfr320.pdf
IRFU320PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 2342 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.48 EUR
75+ 2.8 EUR
150+ 2.22 EUR
525+ 1.88 EUR
1050+ 1.53 EUR
2025+ 1.44 EUR
Mindestbestellmenge: 8
IRFU9210PBF sihfr921.pdf
IRFU9210PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2725 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.82 EUR
10+ 3.17 EUR
100+ 2.53 EUR
500+ 2.14 EUR
1000+ 1.81 EUR
Mindestbestellmenge: 7
IRLU024PBF description sihlr024.pdf
IRLU024PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 2565 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
75+ 3.16 EUR
150+ 2.6 EUR
525+ 2.2 EUR
1050+ 1.87 EUR
2025+ 1.77 EUR
Mindestbestellmenge: 7
IRFU9120PBF sihfr912.pdf
IRFU9120PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 2687 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.08 EUR
75+ 3.28 EUR
150+ 2.7 EUR
525+ 2.28 EUR
1050+ 1.94 EUR
2025+ 1.84 EUR
Mindestbestellmenge: 7
IRFU9024PBF sihfr902.pdf
IRFU9024PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 3054 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.74 EUR
75+ 3.01 EUR
150+ 2.39 EUR
525+ 2.02 EUR
1050+ 1.65 EUR
2025+ 1.55 EUR
Mindestbestellmenge: 7
IRFU9020PBF sihfr902.pdf
IRFU9020PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 9.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 8336 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.32 EUR
75+ 3.47 EUR
150+ 2.85 EUR
525+ 2.42 EUR
1050+ 2.05 EUR
2025+ 1.95 EUR
5025+ 1.87 EUR
Mindestbestellmenge: 7
IRFU9220PBF sihfr922.pdf
IRFU9220PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFUC20PBF description sihfrc20.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4 EUR
Mindestbestellmenge: 7
IRFD210PBF sihfd210.pdf
IRFD210PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 600MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 13621 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
2500+ 1.32 EUR
5000+ 1.26 EUR
10000+ 1.2 EUR
Mindestbestellmenge: 9
IRFD110PBF sihfd110.pdf
IRFD110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 21233 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
10+ 3.18 EUR
100+ 2.48 EUR
500+ 2.1 EUR
1000+ 1.71 EUR
2000+ 1.61 EUR
5000+ 1.53 EUR
10000+ 1.46 EUR
Mindestbestellmenge: 7
IRFD014PBF sihfd014.pdf
IRFD014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 1.7A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
auf Bestellung 421 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
Mindestbestellmenge: 9
IRFD120PBF sihfd120.pdf
IRFD120PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.3A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 3320 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
2500+ 1.32 EUR
Mindestbestellmenge: 9
IRFD9014PBF sihfd901.pdf
IRFD9014PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.1A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 660mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 8392 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
2500+ 1.32 EUR
5000+ 1.26 EUR
Mindestbestellmenge: 9
IRFD214PBF sihfd214.pdf
IRFD214PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 450MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 270mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
IRFD9010PBF sihfd901.pdf
IRFD9010PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 1.1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 2797 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.62 EUR
100+ 2.04 EUR
500+ 1.73 EUR
1000+ 1.41 EUR
2000+ 1.32 EUR
Mindestbestellmenge: 9
IRFD010PBF IRFD010,%20012.pdf
IRFD010PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 1.7A 4DIP
Produkt ist nicht verfügbar
IRFD224PBF sihfd224.pdf
IRFD224PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 630MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 380mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2250 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.82 EUR
100+ 2.19 EUR
500+ 1.86 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
IRFD220PBF sihfd220.pdf
IRFD220PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 800MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 2878 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.82 EUR
100+ 2.19 EUR
2500+ 1.42 EUR
Mindestbestellmenge: 8
IRLD014PBF sihld014.pdf
IRLD014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 1.7A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
auf Bestellung 6986 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
10+ 2.95 EUR
100+ 2.29 EUR
500+ 1.94 EUR
1000+ 1.58 EUR
2000+ 1.49 EUR
5000+ 1.42 EUR
Mindestbestellmenge: 8
IRFD310PBF sihfd310.pdf
IRFD310PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 350MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 210mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2315 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.77 EUR
10+ 3.08 EUR
100+ 2.39 EUR
Mindestbestellmenge: 7
IRFD9110PBF sihfd911.pdf
IRFD9110PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 700MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 420mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 3319 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.77 EUR
10+ 3.08 EUR
100+ 2.39 EUR
2500+ 1.56 EUR
Mindestbestellmenge: 7
IRFD9120PBF sihfd912.pdf
IRFD9120PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 53140 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
10+ 3.01 EUR
100+ 2.39 EUR
500+ 2.03 EUR
1000+ 1.72 EUR
2000+ 1.63 EUR
5000+ 1.57 EUR
10000+ 1.52 EUR
Mindestbestellmenge: 8
IRFD9024PBF sihfd902.pdf
IRFD9024PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 1735 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.87 EUR
10+ 3.21 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 7
IRFD9020PBF sihfd902.pdf
IRFD9020PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
auf Bestellung 4310 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.87 EUR
10+ 3.21 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
2000+ 1.74 EUR
Mindestbestellmenge: 7
IRFD024PBF sihfd024.pdf
IRFD024PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.5A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 3405 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
2500+ 1.77 EUR
Mindestbestellmenge: 7
IRFD9210PBF sihfd921.pdf
IRFD9210PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 400MA 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 6225 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.27 EUR
100+ 2.6 EUR
2500+ 1.77 EUR
5000+ 1.71 EUR
Mindestbestellmenge: 7
IRLD110PBF sihld110.pdf
IRLD110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 2007 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.26 EUR
100+ 2.6 EUR
500+ 2.2 EUR
1000+ 1.86 EUR
2000+ 1.77 EUR
Mindestbestellmenge: 7
IRLD120PBF sihld120.pdf
IRLD120PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.3A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 121 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.03 EUR
10+ 3.36 EUR
100+ 2.67 EUR
Mindestbestellmenge: 7
IRFD320PBF sihfd320.pdf
IRFD320PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 490MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 490mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 210mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.29 EUR
10+ 3.56 EUR
100+ 2.84 EUR
Mindestbestellmenge: 7
IRLD024PBF sihld24.pdf
IRLD024PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.5A 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 11511 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.52 EUR
10+ 3.74 EUR
100+ 2.98 EUR
500+ 2.52 EUR
1000+ 2.14 EUR
2000+ 2.03 EUR
5000+ 1.96 EUR
10000+ 1.89 EUR
Mindestbestellmenge: 6
IRFDC20PBF sihfdc20.pdf
IRFDC20PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 320MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 190mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 5886 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.23 EUR
10+ 4.34 EUR
100+ 3.45 EUR
500+ 2.92 EUR
1000+ 2.48 EUR
2000+ 2.35 EUR
5000+ 2.27 EUR
Mindestbestellmenge: 5
IRFD9220PBF sihfd922.pdf
IRFD9220PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 560MA 4DIP
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 560mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 340mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
IRFR9014TRPBF sihfr901.pdf
IRFR9014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 5961 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
13+ 2.1 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
IRFL110TRPBF sihfl110.pdf
IRFL110TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 13776 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
14+ 1.87 EUR
100+ 1.29 EUR
500+ 1.08 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
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