Die Produkte vishay siliconix

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SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 73234.pdf Vishay Siliconix Description: MOSFET N-CH 30V 3.16A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 222 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1662 Stücke - Preis und Lieferfrist anzeigen
17+ 1.53 EUR
20+ 1.3 EUR
100+ 0.97 EUR
SIA448DJ-T1-GE3 SIA448DJ-T1-GE3 sia448dj.pdf Vishay Siliconix Description: MOSFET N-CH 20V 12A SC70-6L
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 12A SC70-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 12723 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 12A SC70-6L
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
auf Bestellung 12723 Stücke
Lieferzeit 21-28 Tag (e)
SI1433DH-T1-E3 SI1433DH-T1-E3 si1433dh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 1.9A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 950mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 100µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 288 Stücke - Preis und Lieferfrist anzeigen
SI2323DS-T1-E3 SI2323DS-T1-E3 72024.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.7A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2323DS-T1-GE3 SI2323DS-T1-GE3 72024.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI2306BDS-T1-E3 SI2306BDS-T1-E3 73234.pdf Vishay Siliconix Description: MOSFET N-CH 30V 3.16A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2334DS-T1-GE3 SI2334DS-T1-GE3 si2334ds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.9A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1247 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 4.9A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 1239 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1247 Stücke - Preis und Lieferfrist anzeigen
SI5419DU-T1-GE3 SI5419DU-T1-GE3 si5419du.pdf Vishay Siliconix Description: MOSFET P-CH 30V 12A PPAK CHIPFET
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI5419
Package / Case: 8-PowerVDFN
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 12A PPAK CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI5419
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Mounting Type: Surface Mount
auf Bestellung 6446 Stücke
Lieferzeit 21-28 Tag (e)
SI1488DH-T1-E3 SI1488DH-T1-E3 SI1488DH.pdf Vishay Siliconix Description: MOSFET N-CH 20V 6.1A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1488
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 98 Stücke - Preis und Lieferfrist anzeigen
SI2343CDS-T1-GE3 SI2343CDS-T1-GE3 si2343cd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.9A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26815 Stücke - Preis und Lieferfrist anzeigen
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 sia429dj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK SC70-6
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIA429
Manufacturer: Vishay Siliconix
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Base Part Number: SIA429
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SC-70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 22288 Stücke
Lieferzeit 21-28 Tag (e)
SI1307DL-T1-E3 SI1307DL-T1-E3 si1307dl.pdf Vishay Siliconix Description: MOSFET P-CH 12V 0.85A SOT323-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2197 Stücke - Preis und Lieferfrist anzeigen
SI2315BDS-T1-E3 SI2315BDS-T1-E3 72014.pdf Vishay Siliconix Description: MOSFET P-CH 12V 3A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2315
auf Bestellung 805 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22294 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 12V 3A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2315
auf Bestellung 805 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22294 Stücke - Preis und Lieferfrist anzeigen
2N7002-T1-E3 2N7002-T1-E3 70226.pdf Vishay Siliconix Description: MOSFET N-CH 60V 115MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6300 Stücke - Preis und Lieferfrist anzeigen
SI3447CDV-T1-GE3 SI3447CDV-T1-GE3 si3447cd.pdf Vishay Siliconix Description: MOSFET P-CH 12V 7.8A 6-TSOP
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 12V 7.8A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
auf Bestellung 1712 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 12V 7.8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
auf Bestellung 1712 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI2307CDS-T1-E3 SI2307CDS-T1-E3 si2307cds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7765 Stücke - Preis und Lieferfrist anzeigen
SI3446ADV-T1-E3 SI3446ADV-T1-E3 73772.pdf Vishay Siliconix Description: MOSFET N-CH 20V 6A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI8467DB-T2-E1 SI8467DB-T2-E1 si8467db.pdf Vishay Siliconix Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 73 mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS412DN-T1-GE3 SIS412DN-T1-GE3 sis412dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK1212-8
Base Part Number: SIS412
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10393 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK1212-8
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS412
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 7360 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10393 Stücke - Preis und Lieferfrist anzeigen
SI1413EDH-T1-E3 SI1413EDH-T1-E3 si1413ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
Package / Case: 6-TSSOP, SC-88, SOT-363
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 153718 Stücke - Preis und Lieferfrist anzeigen
SI3447BDV-T1-E3 SI3447BDV-T1-E3 72020.pdf Vishay Siliconix Description: MOSFET P-CH 12V 4.5A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7566 Stücke - Preis und Lieferfrist anzeigen
SI8461DB-T2-E1 SI8461DB-T2-E1 si8461db.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI8461
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 2082 Stücke
Lieferzeit 21-28 Tag (e)
SI5458DU-T1-GE3 SI5458DU-T1-GE3 si5458du.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6A PPAK CHIPFET
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Power - Max: 10.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerPak® ChipFET™
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA431DJ-T1-GE3 SIA431DJ-T1-GE3 sia431dj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK SC70-6
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA431
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA431
auf Bestellung 3675 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK SC70-6
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
auf Bestellung 1499 Stücke
Lieferzeit 21-28 Tag (e)
SI2316BDS-T1-E3 SI2316BDS-T1-E3 si2316bd.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SOT23-3
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25795 Stücke - Preis und Lieferfrist anzeigen
SI1426DH-T1-E3 SI1426DH-T1-E3 si1426dh.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.8A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26208 Stücke - Preis und Lieferfrist anzeigen
SI4778DY-T1-GE3 SI4778DY-T1-GE3 si4778dy.pdf Vishay Siliconix Description: MOSFET N-CH 25V 8A 8-SOIC
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 25V 8A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SI1471DH-T1-E3 SI1471DH-T1-E3 si1471dh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 2339 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 2339 Stücke
Lieferzeit 21-28 Tag (e)
SI2333DS-T1-E3 SI2333DS-T1-E3 72023.pdf Vishay Siliconix Description: MOSFET P-CH 12V 4.1A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
auf Bestellung 475 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95075 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 12V 4.1A SOT23-3
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
auf Bestellung 475 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95075 Stücke - Preis und Lieferfrist anzeigen
SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 si3459bd.pdf Vishay Siliconix Description: MOSFET P-CH 60V 2.9A 6TSOP
Base Part Number: SI3459
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 8559 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28747 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 60V 2.9A 6TSOP
Base Part Number: SI3459
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 8559 Stücke
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SI2316DS-T1-E3 SI2316DS-T1-E3 si2316ds.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.9A SOT23-3
Base Part Number: SI2316
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CH 30V 2.9A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI2316
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
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SI8499DB-T2-E1 SI8499DB-T2-E1 si8499db.pdf Vishay Siliconix Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
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SI1471DH-T1-GE3 SI1471DH-T1-GE3 si1471dh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC-70-6
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC-70-6
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
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Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
FET Type: MOSFET P-Channel, Metal Oxide
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SI1473DH-T1-GE3 SI1473DH-T1-GE3 si1473dh.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Supplier Device Package: SC-70-6 (SOT-363)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
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Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
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SI4823DY-T1-GE3 SI4823DY-T1-GE3 si4823dy.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.1A 8-SOIC
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Vishay Siliconix Description: MOSFET P-CH 20V 4.1A 8-SOIC
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
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SI4485DY-T1-GE3 SI4485DY-T1-GE3 si4485dy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4128DY-T1-GE3 SI4128DY-T1-GE3 si4128dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 10.9A 8SO
Base Part Number: SI4128
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Base Part Number: SI4128
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SI5404BDC-T1-E3 SI5404BDC-T1-E3 73102.pdf Vishay Siliconix Description: MOSFET N-CH 20V 5.4A 1206-8
Base Part Number: SI5404
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 20V 5.4A 1206-8
Part Status: Obsolete
Packaging: Cut Tape (CT)
Base Part Number: SI5404
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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SI2314EDS-T1-E3 SI2314EDS-T1-E3 si2314ed.pdf Vishay Siliconix Description: MOSFET N-CH 20V 3.77A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 20V 3.77A SOT23-3
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
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SI4178DY-T1-GE3 SI4178DY-T1-GE3 si4178dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A 8SO
Base Part Number: SI4178
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4178
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
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SI7463DP-T1-GE3 SI7463DP-T1-GE3 si7463dp.pdf Vishay Siliconix Description: MOSFET P-CH 40V 11A PPAK SO-8
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SI1024X-T1-GE3 SI1024X-T1-GE3 71170.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 0.485A SC89-6
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1024
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
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DG2738DN-T1-E4 DG2738DN-T1-E4 DG2737-39.pdf Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2738
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2738
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SI2306BDS-T1-GE3 73234.pdf
SI2306BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 222 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1662 Stücke - Preis und Lieferfrist anzeigen
17+ 1.53 EUR
20+ 1.3 EUR
100+ 0.97 EUR
SIA448DJ-T1-GE3 sia448dj.pdf
SIA448DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6L
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
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Lieferzeit 21-28 Tag (e)
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SIA448DJ-T1-GE3 sia448dj.pdf
SIA448DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
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SIA448DJ-T1-GE3 sia448dj.pdf
SIA448DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6L
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 1V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
auf Bestellung 12723 Stücke
Lieferzeit 21-28 Tag (e)
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SI1433DH-T1-E3 si1433dh.pdf
SI1433DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 950mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 100µA
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2323DS-T1-E3 72024.pdf
SI2323DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2323DS-T1-GE3 72024.pdf
SI2323DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI2306BDS-T1-E3 73234.pdf
SI2306BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2334DS-T1-GE3 si2334ds.pdf
SI2334DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2334DS-T1-GE3 si2334ds.pdf
SI2334DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 1239 Stücke
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SI5419DU-T1-GE3 si5419du.pdf
SI5419DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK CHIPFET
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI5419
Package / Case: 8-PowerVDFN
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Lieferzeit 21-28 Tag (e)
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SI5419DU-T1-GE3 si5419du.pdf
SI5419DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK CHIPFET
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI5419
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Mounting Type: Surface Mount
auf Bestellung 6446 Stücke
Lieferzeit 21-28 Tag (e)
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SI1488DH-T1-E3 SI1488DH.pdf
SI1488DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.1A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 49mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Base Part Number: SI1488
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2343CDS-T1-GE3 si2343cd.pdf
SI2343CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.9A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA429DJT-T1-GE3 sia429dj.pdf
SIA429DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIA429
Manufacturer: Vishay Siliconix
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
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SIA429DJT-T1-GE3 sia429dj.pdf
SIA429DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Base Part Number: SIA429
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SC-70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 22288 Stücke
Lieferzeit 21-28 Tag (e)
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SI1307DL-T1-E3 si1307dl.pdf
SI1307DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs (Max): ±8V
Power Dissipation (Max): 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2315BDS-T1-E3 72014.pdf
SI2315BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2315
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SI2315BDS-T1-E3 72014.pdf
SI2315BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 6V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SI2315
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2N7002-T1-E3 70226.pdf
2N7002-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Part Status: Active
Supplier Device Package: TO-236
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3447CDV-T1-GE3 si3447cd.pdf
SI3447CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.8A 6-TSOP
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3447CDV-T1-GE3 si3447cd.pdf
SI3447CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.8A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
auf Bestellung 1712 Stücke
Lieferzeit 21-28 Tag (e)
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SI3447CDV-T1-GE3 si3447cd.pdf
SI3447CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 7.8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3W
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
auf Bestellung 1712 Stücke
Lieferzeit 21-28 Tag (e)
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SI2307CDS-T1-E3 si2307cds.pdf
SI2307CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3446ADV-T1-E3 73772.pdf
SI3446ADV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 5.8A, 4.5V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8467DB-T2-E1 si8467db.pdf
SI8467DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 73 mOhm @ 1A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS412DN-T1-GE3 sis412dn.pdf
SIS412DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK1212-8
Base Part Number: SIS412
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17753 Stücke - Preis und Lieferfrist anzeigen
SIS412DN-T1-GE3 sis412dn.pdf
SIS412DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK1212-8
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS412
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 7360 Stücke
Lieferzeit 21-28 Tag (e)
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SI1413EDH-T1-E3 si1413ed.pdf
SI1413EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.3A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
Package / Case: 6-TSSOP, SC-88, SOT-363
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3447BDV-T1-E3 72020.pdf
SI3447BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4.5A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8461DB-T2-E1 si8461db.pdf
SI8461DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI8461
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8461DB-T2-E1 si8461db.pdf
SI8461DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 2082 Stücke
Lieferzeit 21-28 Tag (e)
SI5458DU-T1-GE3 si5458du.pdf
SI5458DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A PPAK CHIPFET
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 41 mOhm @ 7.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Power - Max: 10.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerPak® ChipFET™
Supplier Device Package: 8-PowerPak® ChipFet (3x1.9)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA431DJ-T1-GE3 sia431dj.pdf
SIA431DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA431
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SIA431DJ-T1-GE3 sia431dj.pdf
SIA431DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA431
auf Bestellung 3675 Stücke
Lieferzeit 21-28 Tag (e)
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SIA431DJ-T1-GE3 sia431dj.pdf
SIA431DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 8V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
auf Bestellung 1499 Stücke
Lieferzeit 21-28 Tag (e)
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SI2316BDS-T1-E3 si2316bd.pdf
SI2316BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1426DH-T1-E3 si1426dh.pdf
SI1426DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75 mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26208 Stücke - Preis und Lieferfrist anzeigen
SI4778DY-T1-GE3 si4778dy.pdf
SI4778DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8-SOIC
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798202 Stücke - Preis und Lieferfrist anzeigen
SI4778DY-T1-GE3 si4778dy.pdf
SI4778DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 8A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SI1471DH-T1-E3 si1471dh.pdf
SI1471DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4678 Stücke - Preis und Lieferfrist anzeigen
SI1471DH-T1-E3 si1471dh.pdf
SI1471DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 2339 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2339 Stücke - Preis und Lieferfrist anzeigen
SI1471DH-T1-E3 si1471dh.pdf
SI1471DH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 2339 Stücke
Lieferzeit 21-28 Tag (e)
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SI2333DS-T1-E3 72023.pdf
SI2333DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4.1A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
auf Bestellung 475 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 95550 Stücke - Preis und Lieferfrist anzeigen
SI2333DS-T1-E3 72023.pdf
SI2333DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4.1A SOT23-3
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
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SI3459BDV-T1-GE3 si3459bd.pdf
SI3459BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.9A 6TSOP
Base Part Number: SI3459
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI3459BDV-T1-GE3 si3459bd.pdf
SI3459BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.9A 6TSOP
Base Part Number: SI3459
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI2316DS-T1-E3 si2316ds.pdf
SI2316DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Base Part Number: SI2316
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SI2316DS-T1-E3 si2316ds.pdf
SI2316DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI2316
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
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SI8499DB-T2-E1 si8499db.pdf
SI8499DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 1.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1471DH-T1-GE3 si1471dh.pdf
SI1471DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SI1471DH-T1-GE3 si1471dh.pdf
SI1471DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
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SI1471DH-T1-GE3 si1471dh.pdf
SI1471DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
FET Type: MOSFET P-Channel, Metal Oxide
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SI1473DH-T1-GE3 si1473dh.pdf
SI1473DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1473DH-T1-GE3 si1473dh.pdf
SI1473DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Supplier Device Package: SC-70-6 (SOT-363)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
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SI1473DH-T1-GE3 si1473dh.pdf
SI1473DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
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SI4823DY-T1-GE3 si4823dy.pdf
SI4823DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.1A 8-SOIC
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4823DY-T1-GE3 si4823dy.pdf
SI4823DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.1A 8-SOIC
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
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SI4485DY-T1-GE3 si4485dy.pdf
SI4485DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4128DY-T1-GE3 si4128dy.pdf
SI4128DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Base Part Number: SI4128
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SI4128DY-T1-GE3 si4128dy.pdf
SI4128DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Base Part Number: SI4128
Manufacturer: Vishay Siliconix
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SI5404BDC-T1-E3 73102.pdf
SI5404BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.4A 1206-8
Base Part Number: SI5404
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5404BDC-T1-E3 73102.pdf
SI5404BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.4A 1206-8
Part Status: Obsolete
Packaging: Cut Tape (CT)
Base Part Number: SI5404
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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SI2314EDS-T1-E3 si2314ed.pdf
SI2314EDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2314EDS-T1-E3 si2314ed.pdf
SI2314EDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
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SI4178DY-T1-GE3 si4178dy.pdf
SI4178DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Base Part Number: SI4178
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4178DY-T1-GE3 si4178dy.pdf
SI4178DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4178
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
SI7463DP-T1-GE3 si7463dp.pdf
SI7463DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 8624 Stücke
Lieferzeit 21-28 Tag (e)
SI1024X-T1-GE3 71170.pdf
SI1024X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.485A SC89-6
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 485mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1024
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
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Lieferzeit 21-28 Tag (e)
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DG2738DN-T1-E4 DG2737-39.pdf
DG2738DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2738
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 720 Stücke - Preis und Lieferfrist anzeigen
DG2738DN-T1-E4 DG2737-39.pdf
DG2738DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 8 OHM 8MINIQFN
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 8Ohm
Channel-to-Channel Matching (ΔRon): 100mOhm
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Switch Time (Ton, Toff) (Max): 60ns, 50ns
-3db Bandwidth: 720MHz
Charge Injection: 10.4pC
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Crosstalk: -109dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFQFN
Supplier Device Package: 8-miniQFN (1.4x1.4)
Base Part Number: DG2738
auf Bestellung 720 Stücke
Lieferzeit 21-28 Tag (e)
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