Die Produkte vishay siliconix
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]
| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
|---|---|---|---|---|---|---|
 |
TN2404K-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 240V 200MA SOT23-3 Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4312 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI1039X-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 12V 0.87A SC89 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 170mW Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 870mA (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
IRFR110TRPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 4.3A DPAK Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4184 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI7772DP-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 35.6A PPAK SO-8 Base Part Number: SI7772 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2242 Stücke - Preis und Lieferfrist anzeigen
|
|
| Vishay Siliconix |
Description: MOSFET N-CH 30V 35.6A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI7772 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2261 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2242 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
 |
SIS406DN-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 9A 1212-8 PPAK Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 71200 Stücke - Preis und Lieferfrist anzeigen
|
|
| Vishay Siliconix |
Description: MOSFET N-CH 30V 9A 1212-8 PPAK Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 629 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 71200 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 9A 1212-8 PPAK Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 629 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 71200 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
 |
SI5406CDC-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 12V 6A 1206-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Power - Max: 5.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET™ |
auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e) |
|
| Vishay Siliconix |
Description: MOSFET N-CH 12V 6A 1206-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Power - Max: 5.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET™ |
auf Bestellung 12941 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
| Vishay Siliconix |
Description: MOSFET N-CH 12V 6A 1206-8 FET Type: MOSFET N-Channel, Metal Oxide Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Power - Max: 5.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET™ |
auf Bestellung 12941 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
|
|
SI5475DDC-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 12V 6A 1206-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.7W Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e) |
|
| Vishay Siliconix |
Description: MOSFET P-CH 12V 6A 1206-8 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5.7W Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount |
auf Bestellung 11903 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
| Vishay Siliconix |
Description: MOSFET P-CH 12V 6A 1206-8 Power - Max: 5.7W Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 11903 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
|
|
SIR836DP-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 21A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1295 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI4621DY-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 6.2A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Schottky Diode (Isolated) FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62500 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI3460BDV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
|
|
| Vishay Siliconix |
Description: MOSFET N-CH 20V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V |
auf Bestellung 763 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
|
|
SI4666DY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 25V 16.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) |
auf Bestellung 7500 Stücke Lieferzeit 21-28 Tag (e) |
|
| Vishay Siliconix |
Description: MOSFET N-CH 25V 16.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 9639 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
| Vishay Siliconix |
Description: MOSFET N-CH 25V 16.5A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drain to Source Voltage (Vdss): 25V |
auf Bestellung 9639 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
 |
SI4401DDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 40V 16.1A 8SO Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Manufacturer: Vishay Siliconix Base Part Number: SI4401 |
auf Bestellung 20000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 334443 Stücke - Preis und Lieferfrist anzeigen
|
|
| Vishay Siliconix |
Description: MOSFET P-CH 40V 16.1A 8SO Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Manufacturer: Vishay Siliconix Base Part Number: SI4401 |
auf Bestellung 21789 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 334443 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
|
|
SI4162DY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 19.3A 8SO Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET N-CH 30V 19.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 4 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 19.3A 8-SOIC Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
auf Bestellung 2155 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
|
|
IRFR9014TRPBF |
|
Vishay Siliconix |
Description: MOSFET P-CH 60V 5.1A DPAK Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2182 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SIA419DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V Vgs(th) (Max) @ Id: 850mV @ 250µA Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SI4425DDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 19.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11736 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SIA411DJ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
 |
SI3867DV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 3.9A 6-TSOP Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 250 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SIA411DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI3458BDV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 60V 4.1A 6TSOP Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Base Part Number: SI3458 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6746 Stücke - Preis und Lieferfrist anzeigen
|
|
| Vishay Siliconix |
Description: MOSFET N-CH 60V 4.1A 6TSOP Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Base Part Number: SI3458 |
auf Bestellung 2156 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6746 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
|
|
SI3437DV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 150V 1.4A 6TSOP Base Part Number: SI3437 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
| Vishay Siliconix |
Description: MOSFET P-CH 150V 1.4A 6TSOP Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) Base Part Number: SI3437 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA |
auf Bestellung 4813 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
 |
SI9407BDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI9407 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1964 Stücke - Preis und Lieferfrist anzeigen
|
|
| Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI9407 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.4W (Ta), 5W (Tc) |
auf Bestellung 4576 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1964 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
 |
SI6433BDQ-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 12V 4A 8-TSSOP Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.05W Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 61500 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
IRFR210TRPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1672 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI3433BDV-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 4.3A 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W FET Type: MOSFET P-Channel, Metal Oxide Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drain to Source Voltage (Vdss): 20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28945 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
IRFR310TRPBF |
 |
Vishay Siliconix |
Description: MOSFET N-CH 400V 1.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3534 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SUD09P10-195-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 100V 8.8A TO252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26348 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SI7403BDN-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 8A PPAK1212-8 Base Part Number: SI7403 Manufacturer: Vishay Siliconix Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 1V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 63 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI4431BDY-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Drain to Source Voltage (Vdss): 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 108706 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI4825DDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 14.9A 8SO Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc) Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.7W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12382 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
IRFR9110TRPBF |
|
Vishay Siliconix |
Description: MOSFET P-CH 100V 3.1A DPAK Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5977 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI7617DN-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 35A PPAK1212-8 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12284 Stücke - Preis und Lieferfrist anzeigen
|
|
 |
SIR484DP-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 20A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29.8W |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
|
| Vishay Siliconix |
Description: MOSFET N-CH 20V 20A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29.8W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
| Vishay Siliconix |
Description: MOSFET N-CH 20V 20A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29.8W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
|
|||
 |
DG2592DN-T1-GE4 |
|
Vishay Siliconix |
Description: IC DETECTION SWITCH 10MINIQFN Base Part Number: DG2592 Supplier Device Package: 10-miniQFN (1.4x1.8) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Number of Channels: 1 Applications: Consumer Audio Function: Detection Switch Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SIA408DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.9W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
| Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SC70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.9W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 2757 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 4.5A SC70-6 Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 17.9W Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 30V Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 2757 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
|
|
SIA415DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
| Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W |
auf Bestellung 5849 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
| Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 5849 Stücke Lieferzeit 21-28 Tag (e) |
|
|||
 |
SI4004DY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 12A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 7500 Stücke Lieferzeit 21-28 Tag (e) |
|
|
|
SI4403BDY-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 7.3A 8SO Base Part Number: SI4403 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.35W (Ta) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Vgs(th) (Max) @ Id: 1V @ 350µA Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120108 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI4403BDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 7.3A 8SO Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.35W (Ta) Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V Vgs(th) (Max) @ Id: 1V @ 350µA Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Obsolete Packaging: Tape & Reel (TR) Base Part Number: SI4403 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |
|
|
SI3483CDV-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Base Part Number: SI3483 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 340140 Stücke - Preis und Lieferfrist anzeigen
|
|
|
|
SI4835DDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2504 Stücke - Preis und Lieferfrist anzeigen
|
| TN2404K-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 240V 200MA SOT23-3
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
auf Bestellung 4312 Stücke - Preis und Lieferfrist anzeigen
| SI1039X-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 0.87A SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
| IRFR110TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
auf Bestellung 4184 Stücke - Preis und Lieferfrist anzeigen
| SI7772DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 35.6A PPAK SO-8
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 4503 Stücke - Preis und Lieferfrist anzeigen
| SI7772DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2261 Stücke Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2242 Stücke - Preis und Lieferfrist anzeigen
| SIS406DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 9A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 72458 Stücke - Preis und Lieferfrist anzeigen
| SIS406DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 629 Stücke Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 71829 Stücke - Preis und Lieferfrist anzeigen
| SIS406DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 629 Stücke Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 71829 Stücke - Preis und Lieferfrist anzeigen
| SI5406CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12000 Stücke Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Lieferzeit 21-28 Tag (e)
auf Bestellung 25882 Stücke - Preis und Lieferfrist anzeigen
| SI5406CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12941 Stücke Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Lieferzeit 21-28 Tag (e)
auf Bestellung 24941 Stücke - Preis und Lieferfrist anzeigen
| SI5406CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12941 Stücke Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Lieferzeit 21-28 Tag (e)
auf Bestellung 24941 Stücke - Preis und Lieferfrist anzeigen
| SI5475DDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 9000 Stücke Description: MOSFET P-CH 12V 6A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 23806 Stücke - Preis und Lieferfrist anzeigen
| SI5475DDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
auf Bestellung 11903 Stücke Description: MOSFET P-CH 12V 6A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 20903 Stücke - Preis und Lieferfrist anzeigen
| SI5475DDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 11903 Stücke Description: MOSFET P-CH 12V 6A 1206-8
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 20903 Stücke - Preis und Lieferfrist anzeigen
| SIR836DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 21A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 21A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Packaging: Tape & Reel (TR)
auf Bestellung 1295 Stücke - Preis und Lieferfrist anzeigen
| SI4621DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 6.2A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 62500 Stücke - Preis und Lieferfrist anzeigen
| SI3460BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
auf Bestellung 33763 Stücke - Preis und Lieferfrist anzeigen
| SI3460BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
auf Bestellung 763 Stücke Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI4666DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
auf Bestellung 7500 Stücke Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 19278 Stücke - Preis und Lieferfrist anzeigen
| SI4666DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 9639 Stücke Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 17139 Stücke - Preis und Lieferfrist anzeigen
| SI4666DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
auf Bestellung 9639 Stücke Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
Lieferzeit 21-28 Tag (e)
auf Bestellung 17139 Stücke - Preis und Lieferfrist anzeigen
| SI4401DDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
auf Bestellung 20000 Stücke Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
Lieferzeit 21-28 Tag (e)
auf Bestellung 356232 Stücke - Preis und Lieferfrist anzeigen
| SI4401DDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
auf Bestellung 21789 Stücke Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
Lieferzeit 21-28 Tag (e)
auf Bestellung 354443 Stücke - Preis und Lieferfrist anzeigen
| SI4162DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 19.3A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2159 Stücke - Preis und Lieferfrist anzeigen
| SI4162DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 4 Stücke Description: MOSFET N-CH 30V 19.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 2155 Stücke - Preis und Lieferfrist anzeigen
| SI4162DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 2155 Stücke Description: MOSFET N-CH 30V 19.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
| IRFR9014TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 5.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2182 Stücke - Preis und Lieferfrist anzeigen
| SIA419DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
| SI4425DDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 19.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
auf Bestellung 11736 Stücke - Preis und Lieferfrist anzeigen
| SIA411DJ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
| SI3867DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.9A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 250 Stücke - Preis und Lieferfrist anzeigen
| SIA411DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 12A SC70-6
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI3458BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
auf Bestellung 8902 Stücke - Preis und Lieferfrist anzeigen
| SI3458BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
auf Bestellung 2156 Stücke Description: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
Lieferzeit 21-28 Tag (e)
auf Bestellung 6746 Stücke - Preis und Lieferfrist anzeigen
| SI3437DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke Description: MOSFET P-CH 150V 1.4A 6TSOP
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 4813 Stücke - Preis und Lieferfrist anzeigen
| SI3437DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 4813 Stücke Description: MOSFET P-CH 150V 1.4A 6TSOP
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI9407BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2500 Stücke Description: MOSFET P-CH 60V 4.7A 8SO
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6540 Stücke - Preis und Lieferfrist anzeigen
| SI9407BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
auf Bestellung 4576 Stücke Description: MOSFET P-CH 60V 4.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 4464 Stücke - Preis und Lieferfrist anzeigen
| SI6433BDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 12V 4A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 61500 Stücke - Preis und Lieferfrist anzeigen
| IRFR210TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 2.6A DPAK
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 1672 Stücke - Preis und Lieferfrist anzeigen
| SI3433BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 4.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 28945 Stücke - Preis und Lieferfrist anzeigen
| IRFR310TRPBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 3534 Stücke - Preis und Lieferfrist anzeigen
| SUD09P10-195-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 8.8A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 8.8A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 26348 Stücke - Preis und Lieferfrist anzeigen
| SI7403BDN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK1212-8
Base Part Number: SI7403
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 8A PPAK1212-8
Base Part Number: SI7403
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 63 Stücke - Preis und Lieferfrist anzeigen
| SI4431BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 5.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 108706 Stücke - Preis und Lieferfrist anzeigen
| SI4825DDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14.9A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 14.9A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 12382 Stücke - Preis und Lieferfrist anzeigen
| IRFR9110TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 3.1A DPAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 3.1A DPAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
auf Bestellung 5977 Stücke - Preis und Lieferfrist anzeigen
| SI7617DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 35A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 12284 Stücke - Preis und Lieferfrist anzeigen
| SIR484DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
auf Bestellung 6000 Stücke Description: MOSFET N-CH 20V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
| SIR484DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
auf Bestellung 6000 Stücke Description: MOSFET N-CH 20V 20A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
| SIR484DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6000 Stücke Description: MOSFET N-CH 20V 20A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
| DG2592DN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC DETECTION SWITCH 10MINIQFN
Base Part Number: DG2592
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Applications: Consumer Audio
Function: Detection Switch
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC DETECTION SWITCH 10MINIQFN
Base Part Number: DG2592
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Applications: Consumer Audio
Function: Detection Switch
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIA408DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 5514 Stücke - Preis und Lieferfrist anzeigen
| SIA408DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2757 Stücke Description: MOSFET N-CH 30V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 2757 Stücke - Preis und Lieferfrist anzeigen
| SIA408DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2757 Stücke Description: MOSFET N-CH 30V 4.5A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 2757 Stücke - Preis und Lieferfrist anzeigen
| SIA415DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 11698 Stücke - Preis und Lieferfrist anzeigen
| SIA415DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
auf Bestellung 5849 Stücke Description: MOSFET P-CH 20V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Lieferzeit 21-28 Tag (e)
auf Bestellung 8849 Stücke - Preis und Lieferfrist anzeigen
| SIA415DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 5849 Stücke Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 8849 Stücke - Preis und Lieferfrist anzeigen
| SI4004DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 7500 Stücke Description: MOSFET N-CH 20V 12A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
| SI4403BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 7.3A 8SO
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
auf Bestellung 120108 Stücke - Preis und Lieferfrist anzeigen
| SI4403BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 7.3A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
| SI3483CDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3483
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3483
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
auf Bestellung 340140 Stücke - Preis und Lieferfrist anzeigen
| SI4835DDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2504 Stücke - Preis und Lieferfrist anzeigen
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]