Die Produkte vishay siliconix

Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]
Foto Bezeichnung Tech.inf. Hersteller Beschreibung verfügbar/auf Bestellung
Preis
ohne MwSt
TN2404K-T1-E3 TN2404K-T1-E3 tn2404k.pdf Vishay Siliconix Description: MOSFET N-CH 240V 200MA SOT23-3
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4312 Stücke - Preis und Lieferfrist anzeigen
SI1039X-T1-GE3 SI1039X-T1-GE3 70682.pdf Vishay Siliconix Description: MOSFET P-CH 12V 0.87A SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR110TRPBF IRFR110TRPBF sihfr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4184 Stücke - Preis und Lieferfrist anzeigen
SI7772DP-T1-GE3 SI7772DP-T1-GE3 si7772dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2242 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2261 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2242 Stücke - Preis und Lieferfrist anzeigen
SIS406DN-T1-GE3 SIS406DN-T1-GE3 sis406dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 71200 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 629 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 71200 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 629 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 71200 Stücke - Preis und Lieferfrist anzeigen
SI5406CDC-T1-GE3 SI5406CDC-T1-GE3 si5406cd.pdf Vishay Siliconix Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12941 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12941 Stücke
Lieferzeit 21-28 Tag (e)
SI5475DDC-T1-GE3 SI5475DDC-T1-GE3 si5475dd.pdf Vishay Siliconix Description: MOSFET P-CH 12V 6A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 12V 6A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
auf Bestellung 11903 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 12V 6A 1206-8
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 11903 Stücke
Lieferzeit 21-28 Tag (e)
SIR836DP-T1-GE3 SIR836DP-T1-GE3 sir836dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 21A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1295 Stücke - Preis und Lieferfrist anzeigen
SI4621DY-T1-E3 SI4621DY-T1-E3 si4621dy.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6.2A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62500 Stücke - Preis und Lieferfrist anzeigen
SI3460BDV-T1-E3 SI3460BDV-T1-E3 si3460bd.pdf Vishay Siliconix Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
auf Bestellung 763 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI4666DY-T1-GE3 SI4666DY-T1-GE3 si4666dy.pdf Vishay Siliconix Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 9639 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
auf Bestellung 9639 Stücke
Lieferzeit 21-28 Tag (e)
SI4401DDY-T1-GE3 SI4401DDY-T1-GE3 si4401dd.pdf Vishay Siliconix Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 334443 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
auf Bestellung 21789 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 334443 Stücke - Preis und Lieferfrist anzeigen
SI4162DY-T1-GE3 SI4162DY-T1-GE3 si4162dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 19.3A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 19.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 19.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 2155 Stücke
Lieferzeit 21-28 Tag (e)
IRFR9014TRPBF IRFR9014TRPBF sihfr901.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2182 Stücke - Preis und Lieferfrist anzeigen
SIA419DJ-T1-GE3 SIA419DJ-T1-GE3 sia419dj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4425DDY-T1-GE3 SI4425DDY-T1-GE3 si4425ddy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 19.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11736 Stücke - Preis und Lieferfrist anzeigen
SIA411DJ-T1-E3 SIA411DJ-T1-E3 sia411dj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3867DV-T1-E3 SI3867DV-T1-E3 72608.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.9A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 250 Stücke - Preis und Lieferfrist anzeigen
SIA411DJ-T1-GE3 SIA411DJ-T1-GE3 sia411dj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A SC70-6
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-E3 SI3458BDV-T1-E3 si3458bd.pdf Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6746 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
auf Bestellung 2156 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6746 Stücke - Preis und Lieferfrist anzeigen
SI3437DV-T1-E3 SI3437DV-T1-E3 si3437dv.pdf Vishay Siliconix Description: MOSFET P-CH 150V 1.4A 6TSOP
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 150V 1.4A 6TSOP
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 4813 Stücke
Lieferzeit 21-28 Tag (e)
SI9407BDY-T1-GE3 SI9407BDY-T1-GE3 si9407bd.pdf Vishay Siliconix Description: MOSFET P-CH 60V 4.7A 8SO
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1964 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 60V 4.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
auf Bestellung 4576 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1964 Stücke - Preis und Lieferfrist anzeigen
SI6433BDQ-T1-E3 SI6433BDQ-T1-E3 72511.pdf Vishay Siliconix Description: MOSFET P-CH 12V 4A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 61500 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRPBF IRFR210TRPBF sihfr210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.6A DPAK
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1672 Stücke - Preis und Lieferfrist anzeigen
SI3433BDV-T1-E3 SI3433BDV-T1-E3 72027.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28945 Stücke - Preis und Lieferfrist anzeigen
IRFR310TRPBF IRFR310TRPBF sihfr310.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3534 Stücke - Preis und Lieferfrist anzeigen
SUD09P10-195-GE3 SUD09P10-195-GE3 sud09p10.pdf Vishay Siliconix Description: MOSFET P-CH 100V 8.8A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26348 Stücke - Preis und Lieferfrist anzeigen
SI7403BDN-T1-E3 SI7403BDN-T1-E3 73333.pdf Vishay Siliconix Description: MOSFET P-CH 20V 8A PPAK1212-8
Base Part Number: SI7403
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 63 Stücke - Preis und Lieferfrist anzeigen
SI4431BDY-T1-E3 SI4431BDY-T1-E3 si4431bd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 108706 Stücke - Preis und Lieferfrist anzeigen
SI4825DDY-T1-GE3 SI4825DDY-T1-GE3 si4825dd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 14.9A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12382 Stücke - Preis und Lieferfrist anzeigen
IRFR9110TRPBF IRFR9110TRPBF sihfr911.pdf Vishay Siliconix Description: MOSFET P-CH 100V 3.1A DPAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5977 Stücke - Preis und Lieferfrist anzeigen
SI7617DN-T1-GE3 SI7617DN-T1-GE3 si7617dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 35A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12284 Stücke - Preis und Lieferfrist anzeigen
SIR484DP-T1-GE3 SIR484DP-T1-GE3 sir484dp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 20A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 20A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
DG2592DN-T1-GE4 DG2592DN-T1-GE4 dg2592.pdf Vishay Siliconix Description: IC DETECTION SWITCH 10MINIQFN
Base Part Number: DG2592
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Applications: Consumer Audio
Function: Detection Switch
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIA408DJ-T1-GE3 SIA408DJ-T1-GE3 sia408dj.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2757 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2757 Stücke
Lieferzeit 21-28 Tag (e)
SIA415DJ-T1-GE3 SIA415DJ-T1-GE3 sia415dj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
auf Bestellung 5849 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 5849 Stücke
Lieferzeit 21-28 Tag (e)
SI4004DY-T1-GE3 SI4004DY-T1-GE3 si4004dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 12A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
SI4403BDY-T1-E3 SI4403BDY-T1-E3 si4403bd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 7.3A 8SO
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120108 Stücke - Preis und Lieferfrist anzeigen
SI4403BDY-T1-GE3 SI4403BDY-T1-GE3 si4403bd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 7.3A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3483CDV-T1-GE3 SI3483CDV-T1-GE3 si3483cd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3483
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 340140 Stücke - Preis und Lieferfrist anzeigen
SI4835DDY-T1-GE3 SI4835DDY-T1-GE3 si4835ddy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2504 Stücke - Preis und Lieferfrist anzeigen
TN2404K-T1-E3 tn2404k.pdf
TN2404K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4312 Stücke - Preis und Lieferfrist anzeigen
SI1039X-T1-GE3 70682.pdf
SI1039X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 170mW
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Rds On (Max) @ Id, Vgs: 165 mOhm @ 870mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR110TRPBF sihfr110.pdf
IRFR110TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4184 Stücke - Preis und Lieferfrist anzeigen
SI7772DP-T1-GE3 si7772dp.pdf
SI7772DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4503 Stücke - Preis und Lieferfrist anzeigen
SI7772DP-T1-GE3 si7772dp.pdf
SI7772DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7772
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2261 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2242 Stücke - Preis und Lieferfrist anzeigen
SIS406DN-T1-GE3 sis406dn.pdf
SIS406DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 72458 Stücke - Preis und Lieferfrist anzeigen
SIS406DN-T1-GE3 sis406dn.pdf
SIS406DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 629 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 71829 Stücke - Preis und Lieferfrist anzeigen
SIS406DN-T1-GE3 sis406dn.pdf
SIS406DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8 PPAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 629 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 71829 Stücke - Preis und Lieferfrist anzeigen
SI5406CDC-T1-GE3 si5406cd.pdf
SI5406CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25882 Stücke - Preis und Lieferfrist anzeigen
SI5406CDC-T1-GE3 si5406cd.pdf
SI5406CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24941 Stücke - Preis und Lieferfrist anzeigen
SI5406CDC-T1-GE3 si5406cd.pdf
SI5406CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6A 1206-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Power - Max: 5.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
auf Bestellung 12941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24941 Stücke - Preis und Lieferfrist anzeigen
SI5475DDC-T1-GE3 si5475dd.pdf
SI5475DDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 23806 Stücke - Preis und Lieferfrist anzeigen
SI5475DDC-T1-GE3 si5475dd.pdf
SI5475DDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
auf Bestellung 11903 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20903 Stücke - Preis und Lieferfrist anzeigen
SI5475DDC-T1-GE3 si5475dd.pdf
SI5475DDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
Power - Max: 5.7W
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 11903 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20903 Stücke - Preis und Lieferfrist anzeigen
SIR836DP-T1-GE3 sir836dp.pdf
SIR836DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 21A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1295 Stücke - Preis und Lieferfrist anzeigen
SI4621DY-T1-E3 si4621dy.pdf
SI4621DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Schottky Diode (Isolated)
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62500 Stücke - Preis und Lieferfrist anzeigen
SI3460BDV-T1-E3 si3460bd.pdf
SI3460BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33763 Stücke - Preis und Lieferfrist anzeigen
SI3460BDV-T1-E3 si3460bd.pdf
SI3460BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
auf Bestellung 763 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI4666DY-T1-GE3 si4666dy.pdf
SI4666DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19278 Stücke - Preis und Lieferfrist anzeigen
SI4666DY-T1-GE3 si4666dy.pdf
SI4666DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 9639 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17139 Stücke - Preis und Lieferfrist anzeigen
SI4666DY-T1-GE3 si4666dy.pdf
SI4666DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.5A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 25V
auf Bestellung 9639 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17139 Stücke - Preis und Lieferfrist anzeigen
SI4401DDY-T1-GE3 si4401dd.pdf
SI4401DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
auf Bestellung 20000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 356232 Stücke - Preis und Lieferfrist anzeigen
SI4401DDY-T1-GE3 si4401dd.pdf
SI4401DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16.1A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SI4401
auf Bestellung 21789 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 354443 Stücke - Preis und Lieferfrist anzeigen
SI4162DY-T1-GE3 si4162dy.pdf
SI4162DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2159 Stücke - Preis und Lieferfrist anzeigen
SI4162DY-T1-GE3 si4162dy.pdf
SI4162DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2155 Stücke - Preis und Lieferfrist anzeigen
SI4162DY-T1-GE3 si4162dy.pdf
SI4162DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 2155 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4 Stücke - Preis und Lieferfrist anzeigen
IRFR9014TRPBF sihfr901.pdf
IRFR9014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2182 Stücke - Preis und Lieferfrist anzeigen
SIA419DJ-T1-GE3 sia419dj.pdf
SIA419DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4425DDY-T1-GE3 si4425ddy.pdf
SI4425DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11736 Stücke - Preis und Lieferfrist anzeigen
SIA411DJ-T1-E3 sia411dj.pdf
SIA411DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3867DV-T1-E3 72608.pdf
SI3867DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.9A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 250 Stücke - Preis und Lieferfrist anzeigen
SIA411DJ-T1-GE3 sia411dj.pdf
SIA411DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-E3 si3458bd.pdf
SI3458BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8902 Stücke - Preis und Lieferfrist anzeigen
SI3458BDV-T1-E3 si3458bd.pdf
SI3458BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3458
auf Bestellung 2156 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6746 Stücke - Preis und Lieferfrist anzeigen
SI3437DV-T1-E3 si3437dv.pdf
SI3437DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4813 Stücke - Preis und Lieferfrist anzeigen
SI3437DV-T1-E3 si3437dv.pdf
SI3437DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.4A 6TSOP
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI3437
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 4813 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI9407BDY-T1-GE3 si9407bd.pdf
SI9407BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6540 Stücke - Preis und Lieferfrist anzeigen
SI9407BDY-T1-GE3 si9407bd.pdf
SI9407BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
auf Bestellung 4576 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4464 Stücke - Preis und Lieferfrist anzeigen
SI6433BDQ-T1-E3 72511.pdf
SI6433BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 61500 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRPBF sihfr210.pdf
IRFR210TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1672 Stücke - Preis und Lieferfrist anzeigen
SI3433BDV-T1-E3 72027.pdf
SI3433BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28945 Stücke - Preis und Lieferfrist anzeigen
IRFR310TRPBF техническая информация sihfr310.pdf
IRFR310TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 1.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3534 Stücke - Preis und Lieferfrist anzeigen
SUD09P10-195-GE3 sud09p10.pdf
SUD09P10-195-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 8.8A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 26348 Stücke - Preis und Lieferfrist anzeigen
SI7403BDN-T1-E3 73333.pdf
SI7403BDN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK1212-8
Base Part Number: SI7403
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 9.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Rds On (Max) @ Id, Vgs: 74mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 63 Stücke - Preis und Lieferfrist anzeigen
SI4431BDY-T1-E3 si4431bd.pdf
SI4431BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 108706 Stücke - Preis und Lieferfrist anzeigen
SI4825DDY-T1-GE3 si4825dd.pdf
SI4825DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14.9A 8SO
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12382 Stücke - Preis und Lieferfrist anzeigen
IRFR9110TRPBF sihfr911.pdf
IRFR9110TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 3.1A DPAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5977 Stücke - Preis und Lieferfrist anzeigen
SI7617DN-T1-GE3 si7617dn.pdf
SI7617DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12284 Stücke - Preis und Lieferfrist anzeigen
SIR484DP-T1-GE3 sir484dp.pdf
SIR484DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
SIR484DP-T1-GE3 sir484dp.pdf
SIR484DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
SIR484DP-T1-GE3 sir484dp.pdf
SIR484DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29.8W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.3 mOhm @ 17.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
DG2592DN-T1-GE4 dg2592.pdf
DG2592DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC DETECTION SWITCH 10MINIQFN
Base Part Number: DG2592
Supplier Device Package: 10-miniQFN (1.4x1.8)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Number of Channels: 1
Applications: Consumer Audio
Function: Detection Switch
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIA408DJ-T1-GE3 sia408dj.pdf
SIA408DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5514 Stücke - Preis und Lieferfrist anzeigen
SIA408DJ-T1-GE3 sia408dj.pdf
SIA408DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2757 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2757 Stücke - Preis und Lieferfrist anzeigen
SIA408DJ-T1-GE3 sia408dj.pdf
SIA408DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 17.9W
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 2757 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2757 Stücke - Preis und Lieferfrist anzeigen
SIA415DJ-T1-GE3 sia415dj.pdf
SIA415DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11698 Stücke - Preis und Lieferfrist anzeigen
SIA415DJ-T1-GE3 sia415dj.pdf
SIA415DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
auf Bestellung 5849 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8849 Stücke - Preis und Lieferfrist anzeigen
SIA415DJ-T1-GE3 sia415dj.pdf
SIA415DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 5849 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8849 Stücke - Preis und Lieferfrist anzeigen
SI4004DY-T1-GE3 si4004dy.pdf
SI4004DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
SI4403BDY-T1-E3 si4403bd.pdf
SI4403BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 120108 Stücke - Preis und Lieferfrist anzeigen
SI4403BDY-T1-GE3 si4403bd.pdf
SI4403BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.3A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.35W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 350µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3483CDV-T1-GE3 si3483cd.pdf
SI3483CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Base Part Number: SI3483
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 6.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 340140 Stücke - Preis und Lieferfrist anzeigen
SI4835DDY-T1-GE3 si4835ddy.pdf
SI4835DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2504 Stücke - Preis und Lieferfrist anzeigen
Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117  Nächste Seite >> ]