Die Produkte vishay siliconix

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SI7774DP-T1-GE3 SI7774DP-T1-GE3 si7774dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 4517 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7517 Stücke - Preis und Lieferfrist anzeigen
IRFL9110PBF IRFL9110PBF sihfl911.pdf Vishay Siliconix Description: MOSFET P-CH 100V 1.1A SOT223
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Drain to Source Voltage (Vdss): 100 V
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1369 Stücke - Preis und Lieferfrist anzeigen
IRLL014PBF IRLL014PBF sihll014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2.7A SOT223
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
IRFL210PBF IRFL210PBF sihfl210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
SI7742DP-T1-GE3 SI7742DP-T1-GE3 si7742dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 830 Stücke - Preis und Lieferfrist anzeigen
SI7336ADP-T1-E3 SI7336ADP-T1-E3 si7336adp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.4W (Ta)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18043 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.4W (Ta)
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18043 Stücke - Preis und Lieferfrist anzeigen
SI7892BDP-T1-E3 SI7892BDP-T1-E3 73228.pdf Vishay Siliconix Description: MOSFET N-CH 30V 15A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11043 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
auf Bestellung 329 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11043 Stücke - Preis und Lieferfrist anzeigen
SI7114DN-T1-E3 SI7114DN-T1-E3 si7114dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 11.7A 1212-8
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2620 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 11.7A 1212-8
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1190 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2620 Stücke - Preis und Lieferfrist anzeigen
SI6415DQ-T1-E3 SI6415DQ-T1-E3 70639.pdf Vishay Siliconix Description: MOSFET P-CH 30V 6.5A 8TSSOP
Base Part Number: SI6415
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 116000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 30V 6.5A 8TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Base Part Number: SI6415
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
auf Bestellung 5532 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 116000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 30V 6.5A 8-TSSOP
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
auf Bestellung 7759 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 116000 Stücke - Preis und Lieferfrist anzeigen
SI4110DY-T1-GE3 SI4110DY-T1-GE3 si4110dy.pdf Vishay Siliconix Description: MOSFET N-CH 80V 17.3A 8-SOIC
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2205pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 124200 Stücke - Preis und Lieferfrist anzeigen
SI6415DQ-T1-GE3 SI6415DQ-T1-GE3 70639.pdf Vishay Siliconix Description: MOSFET P-CH 30V 6.5A 8-TSSOP
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 6.5A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
auf Bestellung 2481 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 6.5A 8-TSSOP
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
auf Bestellung 2481 Stücke
Lieferzeit 21-28 Tag (e)
SI4483EDY-T1-E3 SI4483EDY-T1-E3 si4483ed.pdf Vishay Siliconix Description: MOSFET P-CH 30V 10A 8-SOIC
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 89450 Stücke - Preis und Lieferfrist anzeigen
SI7106DN-T1-GE3 SI7106DN-T1-GE3 si7106dn.pdf Vishay Siliconix Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 12.5A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3701 Stücke
Lieferzeit 21-28 Tag (e)
SI7620DN-T1-GE3 SI7620DN-T1-GE3 si7620dn.pdf Vishay Siliconix Description: MOSFET N-CH 150V 13A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 126 mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR220PBF IRFR220PBF sihfr220.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 200V 4.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 31 Stücke - Preis und Lieferfrist anzeigen
SI4122DY-T1-GE3 SI4122DY-T1-GE3 si4122dy.pdf Vishay Siliconix Description: MOSFET N-CH 40V 27.2A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4122
auf Bestellung 1168 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 40V 27.2A 8SO
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4122
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2513 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
SI7758DP-T1-GE3 SI7758DP-T1-GE3 si7758dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 7150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7850DP-T1-E3 SI7850DP-T1-E3 si7850dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9083 Stücke - Preis und Lieferfrist anzeigen
SI7898DP-T1-E3 SI7898DP-T1-E3 si7898dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 150 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 150V 3A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 384 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4216 Stücke - Preis und Lieferfrist anzeigen
6+ 4.63 EUR
10+ 4.17 EUR
100+ 3.35 EUR
SI7898DP-T1-GE3 SI7898DP-T1-GE3 si7898dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2545 Stücke - Preis und Lieferfrist anzeigen
SI7850DP-T1-GE3 SI7850DP-T1-GE3 si7850dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15117 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 123 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15117 Stücke - Preis und Lieferfrist anzeigen
SI4490DY-T1-E3 SI4490DY-T1-E3 71341.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4490
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 170609 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 200V 2.85A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4490
auf Bestellung 1008 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 170609 Stücke - Preis und Lieferfrist anzeigen
SI7802DN-T1-GE3 SI7802DN-T1-GE3 si7802dn.pdf Vishay Siliconix Description: MOSFET N-CH 250V 1.24A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Drain to Source Voltage (Vdss): 250V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7107DN-T1-GE3 SI7107DN-T1-GE3 si7107dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 9.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 450µA
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6423DQ-T1-E3 SI6423DQ-T1-E3 72257.pdf Vishay Siliconix Description: MOSFET P-CH 12V 8.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 400µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6423DQ-T1-GE3 SI6423DQ-T1-GE3 72257.pdf Vishay Siliconix Description: MOSFET P-CH 12V 8.2A 8TSSOP
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 800mV @ 400µA
Power Dissipation (Max): 1.05W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7815 Stücke - Preis und Lieferfrist anzeigen
SUD50N02-09P-E3 SUD50N02-09P-E3 72034.pdf Vishay Siliconix Description: MOSFET N-CH 20V TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.5W (Ta), 39.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
SI4378DY-T1-E3 SI4378DY-T1-E3 si4378dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 167809 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 19A 8-SOIC
Power Dissipation (Max): 1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 289 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 167809 Stücke - Preis und Lieferfrist anzeigen
SI4378DY-T1-GE3 SI4378DY-T1-GE3 si4378dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 19A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 19A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 6620 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 19A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6620 Stücke
Lieferzeit 21-28 Tag (e)
SI7108DN-T1-E3 SI7108DN-T1-E3 si7108dn.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 20V 14A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7116 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 14A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
auf Bestellung 2152 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7116 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 14A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 15133 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7116 Stücke - Preis und Lieferfrist anzeigen
SI7108DN-T1-GE3 SI7108DN-T1-GE3 si7108dn.pdf Vishay Siliconix Description: MOSFET N-CH 20V 14A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 14A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
auf Bestellung 1775 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 14A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
auf Bestellung 10811 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 si7884bd.pdf Vishay Siliconix Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7884
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5604 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 40V 58A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7884
Package / Case: PowerPAK® SO-8
auf Bestellung 1579 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5604 Stücke - Preis und Lieferfrist anzeigen
SI7636DP-T1-E3 SI7636DP-T1-E3 si7636dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 17A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7223 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 17A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
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Lieferzeit 21-28 Tag (e)
auf Bestellung 7223 Stücke - Preis und Lieferfrist anzeigen
IRFRC20TRLPBF IRFRC20TRLPBF sihfrc20.pdf Vishay Siliconix Description: MOSFET N-CH 600V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7148DP-T1-E3 SI7148DP-T1-E3 73314.pdf Vishay Siliconix Description: MOSFET N-CH 75V 28A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7148
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30195 Stücke - Preis und Lieferfrist anzeigen
SI7456DP-T1-E3 SI7456DP-T1-E3 71603.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7456
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 182914 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7456
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Lieferzeit 21-28 Tag (e)
auf Bestellung 182914 Stücke - Preis und Lieferfrist anzeigen
IRFD9210PBF IRFD9210PBF sihfd921.pdf Vishay Siliconix Description: MOSFET P-CH 200V 400MA 4DIP
Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
auf Bestellung 2019 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.32 EUR
10+ 3.89 EUR
100+ 3.13 EUR
500+ 2.57 EUR
1000+ 2.2 EUR
IRFR110PBF IRFR110PBF sihfr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7102DN-T1-GE3 SI7102DN-T1-GE3 si7102dn.pdf Vishay Siliconix Description: MOSFET N-CH 12V 35A 1212-8
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 35A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3676 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 12V 35A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3676 Stücke
Lieferzeit 21-28 Tag (e)
SIR158DP-T1-GE3 SIR158DP-T1-GE3 sir158dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8606 Stücke - Preis und Lieferfrist anzeigen
SIS402DN-T1-GE3 SIS402DN-T1-GE3 sis402dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35A 1212-8
Package / Case: PowerPAK® 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 35A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
auf Bestellung 736 Stücke
Lieferzeit 21-28 Tag (e)
SIR402DP-T1-GE3 SIR402DP-T1-GE3 sir402dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 4658 Stücke
Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 4658 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SI7464DP-T1-E3 SI7464DP-T1-E3 si7464dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5872 Stücke - Preis und Lieferfrist anzeigen
SI7464DP-T1-GE3 SI7464DP-T1-GE3 si7464dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 9224 Stücke
Lieferzeit 21-28 Tag (e)
SI7852ADP-T1-GE3 SI7852ADP-T1-GE3 si7852ad.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 80V 30A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7852
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12127 Stücke - Preis und Lieferfrist anzeigen
SI7774DP-T1-GE3 si7774dp.pdf
SI7774DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 48W
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 4517 Stücke
Lieferzeit 21-28 Tag (e)
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IRFL9110PBF sihfl911.pdf
IRFL9110PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Drain to Source Voltage (Vdss): 100 V
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRLL014PBF sihll014.pdf
IRLL014PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
IRFL210PBF sihfl210.pdf
IRFL210PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 960MA SOT223
Packaging: Tube
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7742DP-T1-GE3 si7742dp.pdf
SI7742DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7336ADP-T1-E3 si7336adp.pdf
SI7336ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.4W (Ta)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7336ADP-T1-E3 si7336adp.pdf
SI7336ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.4W (Ta)
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18043 Stücke - Preis und Lieferfrist anzeigen
SI7892BDP-T1-E3 73228.pdf
SI7892BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7892BDP-T1-E3 73228.pdf
SI7892BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3775pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
auf Bestellung 329 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11043 Stücke - Preis und Lieferfrist anzeigen
SI7114DN-T1-E3 si7114dn.pdf
SI7114DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A 1212-8
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3810 Stücke - Preis und Lieferfrist anzeigen
SI7114DN-T1-E3 si7114dn.pdf
SI7114DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A 1212-8
Base Part Number: SI7114
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1190 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2620 Stücke - Preis und Lieferfrist anzeigen
SI6415DQ-T1-E3 70639.pdf
SI6415DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Base Part Number: SI6415
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 129291 Stücke - Preis und Lieferfrist anzeigen
SI6415DQ-T1-E3 70639.pdf
SI6415DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Base Part Number: SI6415
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
auf Bestellung 5532 Stücke
Lieferzeit 21-28 Tag (e)
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SI6415DQ-T1-E3 70639.pdf
SI6415DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8-TSSOP
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
auf Bestellung 7759 Stücke
Lieferzeit 21-28 Tag (e)
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SI4110DY-T1-GE3 si4110dy.pdf
SI4110DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.3A 8-SOIC
Drain to Source Voltage (Vdss): 80V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 2205pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 124200 Stücke - Preis und Lieferfrist anzeigen
SI6415DQ-T1-GE3 70639.pdf
SI6415DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8-TSSOP
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6415DQ-T1-GE3 70639.pdf
SI6415DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 8-TSSOP
auf Bestellung 2481 Stücke
Lieferzeit 21-28 Tag (e)
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SI6415DQ-T1-GE3 70639.pdf
SI6415DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8-TSSOP
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 6.5A, 10V
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
auf Bestellung 2481 Stücke
Lieferzeit 21-28 Tag (e)
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SI4483EDY-T1-E3 si4483ed.pdf
SI4483EDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A 8-SOIC
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7106DN-T1-GE3 si7106dn.pdf
SI7106DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7106DN-T1-GE3 si7106dn.pdf
SI7106DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3701 Stücke
Lieferzeit 21-28 Tag (e)
SI7620DN-T1-GE3 si7620dn.pdf
SI7620DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 13A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 126 mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 150V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 5.2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR220PBF техническая информация sihfr220.pdf
IRFR220PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 31 Stücke - Preis und Lieferfrist anzeigen
SI4122DY-T1-GE3 si4122dy.pdf
SI4122DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 27.2A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4122
auf Bestellung 1168 Stücke
Lieferzeit 21-28 Tag (e)
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SI4122DY-T1-GE3 si4122dy.pdf
SI4122DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 27.2A 8SO
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4122
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2513 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1268 Stücke - Preis und Lieferfrist anzeigen
SI7758DP-T1-GE3 si7758dp.pdf
SI7758DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 104W
Input Capacitance (Ciss) (Max) @ Vds: 7150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7850DP-T1-E3 si7850dp.pdf
SI7850DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9083 Stücke - Preis und Lieferfrist anzeigen
SI7898DP-T1-E3 si7898dp.pdf
SI7898DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 150 V
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4600 Stücke - Preis und Lieferfrist anzeigen
SI7898DP-T1-E3 si7898dp.pdf
SI7898DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
auf Bestellung 384 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4216 Stücke - Preis und Lieferfrist anzeigen
6+ 4.63 EUR
10+ 4.17 EUR
100+ 3.35 EUR
SI7898DP-T1-GE3 si7898dp.pdf
SI7898DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2545 Stücke - Preis und Lieferfrist anzeigen
SI7850DP-T1-GE3 si7850dp.pdf
SI7850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15240 Stücke - Preis und Lieferfrist anzeigen
SI7850DP-T1-GE3 si7850dp.pdf
SI7850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 123 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15117 Stücke - Preis und Lieferfrist anzeigen
SI4490DY-T1-E3 71341.pdf
SI4490DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4490
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 171617 Stücke - Preis und Lieferfrist anzeigen
SI4490DY-T1-E3 71341.pdf
SI4490DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.56W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4490
auf Bestellung 1008 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 170609 Stücke - Preis und Lieferfrist anzeigen
SI7802DN-T1-GE3 si7802dn.pdf
SI7802DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 435 mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.24A (Ta)
Drain to Source Voltage (Vdss): 250V
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7107DN-T1-GE3 si7107dn.pdf
SI7107DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 450µA
Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6423DQ-T1-E3 72257.pdf
SI6423DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 400µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6990 Stücke - Preis und Lieferfrist anzeigen
SI6423DQ-T1-GE3 72257.pdf
SI6423DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8TSSOP
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 800mV @ 400µA
Power Dissipation (Max): 1.05W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 9.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7815 Stücke - Preis und Lieferfrist anzeigen
SUD50N02-09P-E3 72034.pdf
SUD50N02-09P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.5W (Ta), 39.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 60000 Stücke - Preis und Lieferfrist anzeigen
SI4378DY-T1-E3 si4378dy.pdf
SI4378DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 168098 Stücke - Preis und Lieferfrist anzeigen
SI4378DY-T1-E3 si4378dy.pdf
SI4378DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Power Dissipation (Max): 1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 289 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 167809 Stücke - Preis und Lieferfrist anzeigen
SI4378DY-T1-GE3 si4378dy.pdf
SI4378DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: 8-SO
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13240 Stücke - Preis und Lieferfrist anzeigen
SI4378DY-T1-GE3 si4378dy.pdf
SI4378DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 6620 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11620 Stücke - Preis und Lieferfrist anzeigen
SI4378DY-T1-GE3 si4378dy.pdf
SI4378DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.6W
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6620 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11620 Stücke - Preis und Lieferfrist anzeigen
SI7108DN-T1-E3 техническая информация si7108dn.pdf
SI7108DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24401 Stücke - Preis und Lieferfrist anzeigen
SI7108DN-T1-E3 техническая информация si7108dn.pdf
SI7108DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
auf Bestellung 2152 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22249 Stücke - Preis und Lieferfrist anzeigen
SI7108DN-T1-E3 техническая информация si7108dn.pdf
SI7108DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 15133 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9268 Stücke - Preis und Lieferfrist anzeigen
SI7108DN-T1-GE3 si7108dn.pdf
SI7108DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 212586 Stücke - Preis und Lieferfrist anzeigen
SI7108DN-T1-GE3 si7108dn.pdf
SI7108DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs (Max): ±16V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7108
auf Bestellung 1775 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 210811 Stücke - Preis und Lieferfrist anzeigen
SI7108DN-T1-GE3 si7108dn.pdf
SI7108DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
auf Bestellung 10811 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 201775 Stücke - Preis und Lieferfrist anzeigen
SI7884BDP-T1-GE3 si7884bd.pdf
SI7884BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7884
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7884BDP-T1-GE3 si7884bd.pdf
SI7884BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI7884
Package / Case: PowerPAK® SO-8
auf Bestellung 1579 Stücke
Lieferzeit 21-28 Tag (e)
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SI7636DP-T1-E3 si7636dp.pdf
SI7636DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10242 Stücke - Preis und Lieferfrist anzeigen
SI7636DP-T1-E3 si7636dp.pdf
SI7636DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Power - Max: 1.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 3019 Stücke
Lieferzeit 21-28 Tag (e)
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IRFRC20TRLPBF sihfrc20.pdf
IRFRC20TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7148DP-T1-E3 73314.pdf
SI7148DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 35V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7148
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7456DP-T1-E3 71603.pdf
SI7456DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7456
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 208728 Stücke - Preis und Lieferfrist anzeigen
SI7456DP-T1-E3 71603.pdf
SI7456DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7456
auf Bestellung 25814 Stücke
Lieferzeit 21-28 Tag (e)
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IRFD9210PBF sihfd921.pdf
IRFD9210PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 400MA 4DIP
Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-HVMDIP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1W (Ta)
auf Bestellung 2019 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.32 EUR
10+ 3.89 EUR
100+ 3.13 EUR
500+ 2.57 EUR
1000+ 2.2 EUR
IRFR110PBF sihfr110.pdf
IRFR110PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7102DN-T1-GE3 si7102dn.pdf
SI7102DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A 1212-8
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7352 Stücke - Preis und Lieferfrist anzeigen
SI7102DN-T1-GE3 si7102dn.pdf
SI7102DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3676 Stücke
Lieferzeit 21-28 Tag (e)
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SI7102DN-T1-GE3 si7102dn.pdf
SI7102DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3676 Stücke
Lieferzeit 21-28 Tag (e)
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SIR158DP-T1-GE3 sir158dp.pdf
SIR158DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8606 Stücke - Preis und Lieferfrist anzeigen
SIS402DN-T1-GE3 sis402dn.pdf
SIS402DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Package / Case: PowerPAK® 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 736 Stücke - Preis und Lieferfrist anzeigen
SIS402DN-T1-GE3 sis402dn.pdf
SIS402DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
auf Bestellung 736 Stücke
Lieferzeit 21-28 Tag (e)
SIR402DP-T1-GE3 sir402dp.pdf
SIR402DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 209316 Stücke - Preis und Lieferfrist anzeigen
SIR402DP-T1-GE3 sir402dp.pdf
SIR402DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 4658 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 204658 Stücke - Preis und Lieferfrist anzeigen
SIR402DP-T1-GE3 sir402dp.pdf
SIR402DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power - Max: 36W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 4658 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 204658 Stücke - Preis und Lieferfrist anzeigen
SI7464DP-T1-E3 si7464dp.pdf
SI7464DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5872 Stücke - Preis und Lieferfrist anzeigen
SI7464DP-T1-GE3 si7464dp.pdf
SI7464DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9224 Stücke - Preis und Lieferfrist anzeigen
SI7464DP-T1-GE3 72052.pdf
SI7464DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.8W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 200V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 9224 Stücke
Lieferzeit 21-28 Tag (e)
SI7852ADP-T1-GE3 техническая информация si7852ad.pdf
SI7852ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1825pF @ 40V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SI7852
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12127 Stücke - Preis und Lieferfrist anzeigen
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