Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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IRFR024TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 14A DPAK Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2004 Stücke - Preis und Lieferfrist anzeigen
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IRFR320TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 3.1A DPAK Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7062 Stücke - Preis und Lieferfrist anzeigen
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SI7686DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 37.9W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 71247 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK SO-8 Power Dissipation (Max): 5W (Ta), 37.9W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 2536 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 71247 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK SO-8 Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 37.9W Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
auf Bestellung 2594 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 71247 Stücke - Preis und Lieferfrist anzeigen
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SI4835DDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12183 Stücke - Preis und Lieferfrist anzeigen
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IRLR024TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 14A DPAK Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Active Supplier Device Package: D-Pak |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5276 Stücke - Preis und Lieferfrist anzeigen
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SQ3419EEV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 7.4A 6TSOP Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drain to Source Voltage (Vdss): 40V FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
| Vishay Siliconix |
Description: MOSFET P-CH 40V 7.4A 6TSOP FET Type: MOSFET P-Channel, Metal Oxide Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drain to Source Voltage (Vdss): 40V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 5W Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Supplier Device Package: 6-TSOP |
auf Bestellung 3419 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 40V 7.4A 6TSOP Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Drain to Source Voltage (Vdss): 40V Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power - Max: 5W Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 FET Type: MOSFET P-Channel, Metal Oxide Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) |
auf Bestellung 3419 Stücke Lieferzeit 21-28 Tag (e) |
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SQ3426EEV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 7A 6TSOP Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate FET Type: MOSFET N-Channel, Metal Oxide Power - Max: 5W Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SIA414DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 8V 12A PPAK SC70-6 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Package / Case: PowerPAK® SC-70-6 Base Part Number: SIA414 |
auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8625 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 8V 12A PPAK SC70-6 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs (Max): ±5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Package / Case: PowerPAK® SC-70-6 Base Part Number: SIA414 |
auf Bestellung 13024 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8625 Stücke - Preis und Lieferfrist anzeigen
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SI4436DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 8A 8SO Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1982 Stücke - Preis und Lieferfrist anzeigen
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SIA413DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 12A PPAK SC70-6 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Package / Case: PowerPAK® SC-70-6 Base Part Number: SIA413 |
auf Bestellung 9000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 12V 12A PPAK SC70-6 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Package / Case: PowerPAK® SC-70-6 Base Part Number: SIA413 |
auf Bestellung 10513 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 12V 12A SC70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 11500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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SIA426DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 4.5A SC70-6 Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Supplier Device Package: PowerPAK® SC-70-6 Single Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 4.5A SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W |
auf Bestellung 8006 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 4.5A SC70-6 Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19W Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 8006 Stücke Lieferzeit 21-28 Tag (e) |
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SIR408DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 50A PPAK SO-8 Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 44.6W Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI4156DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI4156 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3647 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Base Part Number: SI4156 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 5756 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3647 Stücke - Preis und Lieferfrist anzeigen
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SI3481DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 4A 6-TSOP Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.14W Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V FET Type: MOSFET P-Channel, Metal Oxide Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drain to Source Voltage (Vdss): 30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI3475DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 950MA 6-TSOP Supplier Device Package: 6-TSOP Package / Case: 6-TSOP (0.065", 1.65mm Width) Mounting Type: Surface Mount Power - Max: 3.2W Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V Current - Continuous Drain (Id) @ 25°C: 950mA (Tc) Drain to Source Voltage (Vdss): 200V FET Feature: Logic Level Gate FET Type: MOSFET P-Channel, Metal Oxide |
auf Bestellung 21000 Stücke Lieferzeit 21-28 Tag (e) |
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SIS410DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 35A PPAK 1212-8 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIS410 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V |
auf Bestellung 135000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 154809 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 35A PPAK 1212-8 Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SIS410 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Vgs (Max): ±20V |
auf Bestellung 137039 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 154809 Stücke - Preis und Lieferfrist anzeigen
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SI4425BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 8.8A 8SO Base Part Number: SI4425 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 56474 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 8.8A 8SO Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI4425 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) |
auf Bestellung 3224 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 56474 Stücke - Preis und Lieferfrist anzeigen
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IRFR9210TRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 1.9A DPAK Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1242 Stücke - Preis und Lieferfrist anzeigen
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SI4660DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 23.1A 8-SOIC Power - Max: 5.6W Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: MOSFET N-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI4894BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 8.9A 8SO Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SI4894 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.4W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1016200 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 8.9A 8SO Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.4W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4894 |
auf Bestellung 301 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1016200 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 8.9A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.4W Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 4806 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1016200 Stücke - Preis und Lieferfrist anzeigen
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SIA450DJ-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 240V 1.52A SC70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 15W Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc) Drain to Source Voltage (Vdss): 240V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 357 Stücke - Preis und Lieferfrist anzeigen
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SI7123DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 10.2A 1212-8 Power - Max: 1.5W Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V Drain to Source Voltage (Vdss): 20V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 FET Type: MOSFET P-Channel, Metal Oxide Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) |
auf Bestellung 15000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3788 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 10.2A 1212-8 FET Type: MOSFET P-Channel, Metal Oxide Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Drain to Source Voltage (Vdss): 20V Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.5W Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Supplier Device Package: PowerPAK® 1212-8 |
auf Bestellung 17508 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3788 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 10.2A 1212-8 Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta) Power - Max: 1.5W Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA |
auf Bestellung 17508 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3788 Stücke - Preis und Lieferfrist anzeigen
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SI7129DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 35A 1212-8 Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8988 Stücke - Preis und Lieferfrist anzeigen
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SI4114DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 20A 8SO Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4114 |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2861 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 20A 8SO Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SI4114 |
auf Bestellung 4072 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2861 Stücke - Preis und Lieferfrist anzeigen
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SI4116DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 18A 8SO Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Base Part Number: SI4116 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V Vgs (Max): ±12V |
auf Bestellung 5000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 25V 18A 8SO Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 25V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI4116 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
auf Bestellung 5551 Stücke Lieferzeit 21-28 Tag (e) |
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IRFR9120TRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 5.6A DPAK Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2890 Stücke - Preis und Lieferfrist anzeigen
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IRFL214TRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 790MA SOT223 Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 250V 790MA SOT223 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA |
auf Bestellung 1435 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 35 Stücke - Preis und Lieferfrist anzeigen
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SI5445BDC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 5.2A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 202 Stücke - Preis und Lieferfrist anzeigen
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SIA430DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 12A SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19.2W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 12A SC70-6 Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 19.2W Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 3605 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 12A SC70-6 Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 20V FET Type: MOSFET N-Channel, Metal Oxide Power - Max: 19.2W Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
auf Bestellung 3605 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 14000 Stücke - Preis und Lieferfrist anzeigen
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SI2325DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 150V 530MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) FET Type: P-Channel Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 36911 Stücke - Preis und Lieferfrist anzeigen
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SI3473DV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 5.9A 6-TSOP FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP |
auf Bestellung 12000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 12V 5.9A 6-TSOP FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP |
auf Bestellung 15391 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 12V 5.9A 6-TSOP FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP |
auf Bestellung 15391 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI5433BDC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 4.8A 1206-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drain to Source Voltage (Vdss): 20V Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead FET Type: MOSFET P-Channel, Metal Oxide |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI5435BDC-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 4.3A 1206-8 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2388 Stücke - Preis und Lieferfrist anzeigen
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SI5435BDC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 4.3A 1206-8 Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SIS456DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK 1212-8 Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK 1212-8 FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V |
auf Bestellung 6514 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 35A PPAK 1212-8 Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide |
auf Bestellung 6514 Stücke Lieferzeit 21-28 Tag (e) |
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SI2325DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 150V 530MA SOT23-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 46592 Stücke - Preis und Lieferfrist anzeigen
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SI8445DB-T2-E1 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 9.8A 4MICROFOOT Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Obsolete Supplier Device Package: 4-Microfoot Vgs(th) (Max) @ Id: 850mV @ 250µA Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Power Dissipation (Max): 1.8W (Ta), 11.4W (Tc) Rds On (Max) @ Id, Vgs: 84mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SIS454DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 35A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SIS454 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2672 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 20V 35A PPAK1212-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Base Part Number: SIS454 |
auf Bestellung 520 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2672 Stücke - Preis und Lieferfrist anzeigen
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SI3499DV-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 8V 5.3A 6-TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 8V 5.3A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
auf Bestellung 1675 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 8V 5.3A 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V Vgs(th) (Max) @ Id: 750mV @ 250µA Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 |
auf Bestellung 9455 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
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SI4874BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Technology: MOSFET (Metal Oxide) FET Type: N-Channel Base Part Number: SI4874 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.6W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA |
auf Bestellung 1500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 143835 Stücke - Preis und Lieferfrist anzeigen
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| IRFR024TRPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 14A DPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2004 Stücke - Preis und Lieferfrist anzeigen
| IRFR320TRPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 3.1A DPAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 3.1A DPAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 7062 Stücke - Preis und Lieferfrist anzeigen
| SI7686DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 35A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 76377 Stücke - Preis und Lieferfrist anzeigen
| SI7686DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2536 Stücke Description: MOSFET N-CH 30V 35A PPAK SO-8
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 73841 Stücke - Preis und Lieferfrist anzeigen
| SI7686DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 37.9W
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
auf Bestellung 2594 Stücke Description: MOSFET N-CH 30V 35A PPAK SO-8
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 37.9W
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 73783 Stücke - Preis und Lieferfrist anzeigen
| SI4835DDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 12183 Stücke - Preis und Lieferfrist anzeigen
| IRLR024TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 14A DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
auf Bestellung 5276 Stücke - Preis und Lieferfrist anzeigen
| SQ3419EEV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 7.4A 6TSOP
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 6838 Stücke - Preis und Lieferfrist anzeigen
| SQ3419EEV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 5W
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
auf Bestellung 3419 Stücke Description: MOSFET P-CH 40V 7.4A 6TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 5W
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Lieferzeit 21-28 Tag (e)
auf Bestellung 3419 Stücke - Preis und Lieferfrist anzeigen
| SQ3419EEV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Drain to Source Voltage (Vdss): 40V
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 5W
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 3419 Stücke Description: MOSFET P-CH 40V 7.4A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Drain to Source Voltage (Vdss): 40V
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 5W
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: MOSFET P-Channel, Metal Oxide
Input Capacitance (Ciss) (Max) @ Vds: 1065pF @ 20V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3419 Stücke - Preis und Lieferfrist anzeigen
| SQ3426EEV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
auf Bestellung 3000 Stücke Description: MOSFET N-CH 60V 7A 6TSOP
Supplier Device Package: 6-TSOP
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 5W
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Lieferzeit 21-28 Tag (e)
| SIA414DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA414
auf Bestellung 12000 Stücke Description: MOSFET N-CH 8V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA414
Lieferzeit 21-28 Tag (e)
auf Bestellung 21649 Stücke - Preis und Lieferfrist anzeigen
| SIA414DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA414
auf Bestellung 13024 Stücke Description: MOSFET N-CH 8V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs (Max): ±5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA414
Lieferzeit 21-28 Tag (e)
auf Bestellung 20625 Stücke - Preis und Lieferfrist anzeigen
| SI4436DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 8A 8SO
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1982 Stücke - Preis und Lieferfrist anzeigen
| SIA413DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA413
auf Bestellung 9000 Stücke Description: MOSFET P-CH 12V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA413
Lieferzeit 21-28 Tag (e)
auf Bestellung 23013 Stücke - Preis und Lieferfrist anzeigen
| SIA413DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA413
auf Bestellung 10513 Stücke Description: MOSFET P-CH 12V 12A PPAK SC70-6
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA413
Lieferzeit 21-28 Tag (e)
auf Bestellung 21500 Stücke - Preis und Lieferfrist anzeigen
| SIA413DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 11500 Stücke Description: MOSFET P-CH 12V 12A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 20513 Stücke - Preis und Lieferfrist anzeigen
| SIA426DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6000 Stücke Description: MOSFET N-CH 20V 4.5A SC70-6
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 16012 Stücke - Preis und Lieferfrist anzeigen
| SIA426DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
auf Bestellung 8006 Stücke Description: MOSFET N-CH 20V 4.5A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Lieferzeit 21-28 Tag (e)
auf Bestellung 14006 Stücke - Preis und Lieferfrist anzeigen
| SIA426DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 8006 Stücke Description: MOSFET N-CH 20V 4.5A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 23.6 mOhm @ 9.9A, 10V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19W
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 14006 Stücke - Preis und Lieferfrist anzeigen
| SIR408DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.6W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 50A PPAK SO-8
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 44.6W
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
| SI4156DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4156
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 5000 Stücke Description: MOSFET N-CH 30V 24A 8SO
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI4156
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 9403 Stücke - Preis und Lieferfrist anzeigen
| SI4156DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Base Part Number: SI4156
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5756 Stücke Description: MOSFET N-CH 30V 24A 8SO
Base Part Number: SI4156
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8647 Stücke - Preis und Lieferfrist anzeigen
| SI3481DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 4A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5.3A, 10V
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
| SI3475DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 950MA 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: 6-TSOP (0.065", 1.65mm Width)
Mounting Type: Surface Mount
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 950mA (Tc)
Drain to Source Voltage (Vdss): 200V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 21000 Stücke Description: MOSFET P-CH 200V 950MA 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: 6-TSOP (0.065", 1.65mm Width)
Mounting Type: Surface Mount
Power - Max: 3.2W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.61 Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 950mA (Tc)
Drain to Source Voltage (Vdss): 200V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
| SIS410DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIS410
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 135000 Stücke Description: MOSFET N-CH 20V 35A PPAK 1212-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIS410
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 291848 Stücke - Preis und Lieferfrist anzeigen
| SIS410DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS410
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
auf Bestellung 137039 Stücke Description: MOSFET N-CH 20V 35A PPAK 1212-8
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIS410
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 289809 Stücke - Preis und Lieferfrist anzeigen
| SI4425BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Base Part Number: SI4425
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2500 Stücke Description: MOSFET P-CH 30V 8.8A 8SO
Base Part Number: SI4425
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 59698 Stücke - Preis und Lieferfrist anzeigen
| SI4425BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4425
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
auf Bestellung 3224 Stücke Description: MOSFET P-CH 30V 8.8A 8SO
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4425
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 58974 Stücke - Preis und Lieferfrist anzeigen
| IRFR9210TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 1.9A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 1242 Stücke - Preis und Lieferfrist anzeigen
| SI4660DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 23.1A 8-SOIC
Power - Max: 5.6W
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 23.1A 8-SOIC
Power - Max: 5.6W
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SI4894BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8SO
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4894
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 8.9A 8SO
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4894
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 1021307 Stücke - Preis und Lieferfrist anzeigen
| SI4894BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4894
auf Bestellung 301 Stücke Description: MOSFET N-CH 30V 8.9A 8SO
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4894
Lieferzeit 21-28 Tag (e)
auf Bestellung 1021006 Stücke - Preis und Lieferfrist anzeigen
| SI4894BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8.9A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 4806 Stücke Description: MOSFET N-CH 30V 8.9A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 1016501 Stücke - Preis und Lieferfrist anzeigen
| SIA450DJ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 1.52A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15W
Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc)
Drain to Source Voltage (Vdss): 240V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 240V 1.52A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 15W
Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V
Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc)
Drain to Source Voltage (Vdss): 240V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
auf Bestellung 357 Stücke - Preis und Lieferfrist anzeigen
| SI7123DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.2A 1212-8
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
auf Bestellung 15000 Stücke Description: MOSFET P-CH 20V 10.2A 1212-8
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 38804 Stücke - Preis und Lieferfrist anzeigen
| SI7123DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.2A 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 17508 Stücke Description: MOSFET P-CH 20V 10.2A 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Supplier Device Package: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 36296 Stücke - Preis und Lieferfrist anzeigen
| SI7123DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10.2A 1212-8
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 17508 Stücke Description: MOSFET P-CH 20V 10.2A 1212-8
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 3729pF @ 10V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 36296 Stücke - Preis und Lieferfrist anzeigen
| SI7129DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 14.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
auf Bestellung 8988 Stücke - Preis und Lieferfrist anzeigen
| SI4114DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4114
auf Bestellung 2500 Stücke Description: MOSFET N-CH 20V 20A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4114
Lieferzeit 21-28 Tag (e)
auf Bestellung 6933 Stücke - Preis und Lieferfrist anzeigen
| SI4114DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4114
auf Bestellung 4072 Stücke Description: MOSFET N-CH 20V 20A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4114
Lieferzeit 21-28 Tag (e)
auf Bestellung 5361 Stücke - Preis und Lieferfrist anzeigen
| SI4116DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 18A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Base Part Number: SI4116
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V
Vgs (Max): ±12V
auf Bestellung 5000 Stücke Description: MOSFET N-CH 25V 18A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Base Part Number: SI4116
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V
Vgs (Max): ±12V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5551 Stücke - Preis und Lieferfrist anzeigen
| SI4116DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 18A 8SO
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4116
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
auf Bestellung 5551 Stücke Description: MOSFET N-CH 25V 18A 8SO
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4116
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
| IRFR9120TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 5.6A DPAK
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2890 Stücke - Preis und Lieferfrist anzeigen
| IRFL214TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 790MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 790MA SOT223
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1470 Stücke - Preis und Lieferfrist anzeigen
| IRFL214TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 790MA SOT223
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
auf Bestellung 1435 Stücke Description: MOSFET N-CH 250V 790MA SOT223
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 470mA, 10V
Current - Continuous Drain (Id) @ 25°C: 790mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Lieferzeit 21-28 Tag (e)
auf Bestellung 35 Stücke - Preis und Lieferfrist anzeigen
|
| SI5445BDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.2A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 5.2A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 202 Stücke - Preis und Lieferfrist anzeigen
| SIA430DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
auf Bestellung 21210 Stücke - Preis und Lieferfrist anzeigen
| SIA430DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 3605 Stücke Description: MOSFET N-CH 20V 12A SC70-6
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 17605 Stücke - Preis und Lieferfrist anzeigen
| SIA430DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
auf Bestellung 3605 Stücke Description: MOSFET N-CH 20V 12A SC70-6
Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET N-Channel, Metal Oxide
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 17605 Stücke - Preis und Lieferfrist anzeigen
| SI2325DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 530MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 150V 530MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 36911 Stücke - Preis und Lieferfrist anzeigen
| SI3473DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
auf Bestellung 12000 Stücke Description: MOSFET P-CH 12V 5.9A 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Lieferzeit 21-28 Tag (e)
auf Bestellung 63782 Stücke - Preis und Lieferfrist anzeigen
| SI3473DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
auf Bestellung 15391 Stücke Description: MOSFET P-CH 12V 5.9A 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Lieferzeit 21-28 Tag (e)
auf Bestellung 60391 Stücke - Preis und Lieferfrist anzeigen
| SI3473DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.9A 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
auf Bestellung 15391 Stücke Description: MOSFET P-CH 12V 5.9A 6-TSOP
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Lieferzeit 21-28 Tag (e)
auf Bestellung 60391 Stücke - Preis und Lieferfrist anzeigen
| SI5433BDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.8A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 4.8A 1206-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
FET Type: MOSFET P-Channel, Metal Oxide
| SI5435BDC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 4.3A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
auf Bestellung 2388 Stücke - Preis und Lieferfrist anzeigen
| SI5435BDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 4.3A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
| SIS456DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
auf Bestellung 6000 Stücke Description: MOSFET N-CH 30V 35A PPAK 1212-8
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 13028 Stücke - Preis und Lieferfrist anzeigen
| SIS456DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 6514 Stücke Description: MOSFET N-CH 30V 35A PPAK 1212-8
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 12514 Stücke - Preis und Lieferfrist anzeigen
| SIS456DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 6514 Stücke Description: MOSFET N-CH 30V 35A PPAK 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Lieferzeit 21-28 Tag (e)
auf Bestellung 12514 Stücke - Preis und Lieferfrist anzeigen
| SI2325DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 530MA SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 150V 530MA SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 46592 Stücke - Preis und Lieferfrist anzeigen
| SI8445DB-T2-E1 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 4MICROFOOT
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Obsolete
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 850mV @ 250µA
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Power Dissipation (Max): 1.8W (Ta), 11.4W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 9.8A 4MICROFOOT
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Obsolete
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 850mV @ 250µA
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Power Dissipation (Max): 1.8W (Ta), 11.4W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| SIS454DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS454
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS454
auf Bestellung 3192 Stücke - Preis und Lieferfrist anzeigen
| SIS454DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS454
auf Bestellung 520 Stücke Description: MOSFET N-CH 20V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS454
Lieferzeit 21-28 Tag (e)
auf Bestellung 2672 Stücke - Preis und Lieferfrist anzeigen
| SI3499DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 8V 5.3A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
auf Bestellung 44130 Stücke - Preis und Lieferfrist anzeigen
| SI3499DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
auf Bestellung 1675 Stücke Description: MOSFET P-CH 8V 5.3A 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 42455 Stücke - Preis und Lieferfrist anzeigen
|
| SI3499DV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Vgs(th) (Max) @ Id: 750mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 9455 Stücke Description: MOSFET P-CH 8V 5.3A 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 4.5V
Vgs(th) (Max) @ Id: 750mV @ 250µA
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Lieferzeit 21-28 Tag (e)
auf Bestellung 34675 Stücke - Preis und Lieferfrist anzeigen
| SI4874BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI4874
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 1500 Stücke Description: MOSFET N-CH 30V 12A 8SO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI4874
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 143835 Stücke - Preis und Lieferfrist anzeigen
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