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SI5855DC-T1-E3 SI5855DC-T1-E3 Vishay Siliconix Description: MOSFET P-CH 20V 2.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
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SI5856DC-T1-E3 SI5856DC-T1-E3 Vishay Siliconix Description: MOSFET N-CH 20V 4.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
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SI5857DU-T1-E3 SI5857DU-T1-E3 Vishay Siliconix si5857du.pdf Description: MOSFET P-CH 20V 6A PPAK CHIPFET
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SI5858DU-T1-E3 SI5858DU-T1-E3 Vishay Siliconix si5858du.pdf Description: MOSFET N-CH 20V 6A PPAK CHIPFET
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SI5902DC-T1-E3 SI5902DC-T1-E3 Vishay Siliconix si5902dc.pdf Description: MOSFET 2N-CH 30V 2.9A 1206-8
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SI5903DC-T1-E3 SI5903DC-T1-E3 Vishay Siliconix 71054.pdf Description: MOSFET 2P-CH 20V 2.1A 1206-8
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SI5904DC-T1-E3 SI5904DC-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 20V 3.1A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5908DC-T1-E3 SI5908DC-T1-E3 Vishay Siliconix si5908dc.pdf Description: MOSFET 2N-CH 20V 4.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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SI5920DC-T1-E3 SI5920DC-T1-E3 Vishay Siliconix si5920dc.pdf Description: MOSFET 2N-CH 8V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5933DC-T1-E3 SI5933DC-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 20V 2.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5935DC-T1-E3 SI5935DC-T1-E3 Vishay Siliconix si5935dc.pdf Description: MOSFET 2P-CH 20V 3A 1206-8
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SI5938DU-T1-E3 SI5938DU-T1-E3 Vishay Siliconix 73463.pdf Description: MOSFET 2N-CH 20V 6A 8PWRPAK
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SI5943DU-T1-E3 SI5943DU-T1-E3 Vishay Siliconix 73669.pdf Description: MOSFET 2P-CH 12V 6A 8PWRPAK
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SI5944DU-T1-E3 SI5944DU-T1-E3 Vishay Siliconix 73683.pdf Description: MOSFET 2N-CH 40V 6A 8PWRPAK
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SI5947DU-T1-E3 SI5947DU-T1-E3 Vishay Siliconix 73695.pdf Description: MOSFET 2P-CH 20V 6A 8PWRPAK
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Si6410DQ-T1-E3 Si6410DQ-T1-E3 Vishay Siliconix 70661.pdf Description: MOSFET N-CH 30V 8TSSOP
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SI6415DQ-T1-E3 SI6415DQ-T1-E3 Vishay Siliconix 70639.pdf Description: MOSFET P-CH 30V 6.5A 8TSSOP
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SI6423DQ-T1-E3 SI6423DQ-T1-E3 Vishay Siliconix 72257.pdf Description: MOSFET P-CH 12V 8.2A 8TSSOP
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SI6433BDQ-T1-E3 SI6433BDQ-T1-E3 Vishay Siliconix 72511.pdf Description: MOSFET P-CH 12V 4A 8-TSSOP
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SI6459BDQ-T1-E3 SI6459BDQ-T1-E3 Vishay Siliconix 72518.pdf Description: MOSFET P-CH 60V 2.2A 8-TSSOP
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SI6463BDQ-T1-E3 SI6463BDQ-T1-E3 Vishay Siliconix doc?72018 Description: MOSFET P-CH 20V 6.2A 8-TSSOP
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SI6544BDQ-T1-E3 SI6544BDQ-T1-E3 Vishay Siliconix 72244.pdf Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
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SI6913DQ-T1-E3 SI6913DQ-T1-E3 Vishay Siliconix si6913dq.pdf Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
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SI6924AEDQ-T1-E3 SI6924AEDQ-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 28V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
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SI6925ADQ-T1-E3 SI6925ADQ-T1-E3 Vishay Siliconix 72623.pdf Description: MOSFET 2N-CH 20V 3.3A 8TSSOP
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SI6926ADQ-T1-E3 SI6926ADQ-T1-E3 Vishay Siliconix 72754.pdf Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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Si6928DQ-T1-E3 Si6928DQ-T1-E3 Vishay Siliconix 70663.pdf Description: MOSFET 2N-CH 30V 4A 8TSSOP
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SI6943BDQ-T1-E3 SI6943BDQ-T1-E3 Vishay Siliconix 72016.pdf Description: MOSFET 2P-CH 12V 2.3A 8TSSOP
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Si6954ADQ-T1-E3 Si6954ADQ-T1-E3 Vishay Siliconix 71130.pdf Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
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SI6963BDQ-T1-E3 SI6963BDQ-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-TSSOP
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SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3 Vishay Siliconix si6968be.pdf Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
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SI6969BDQ-T1-E3 SI6969BDQ-T1-E3 Vishay Siliconix 72017.pdf Description: MOSFET 2P-CH 12V 4A 8TSSOP
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SI6981DQ-T1-E3 SI6981DQ-T1-E3 Vishay Siliconix si6981dq.pdf Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
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SI6983DQ-T1-E3 SI6983DQ-T1-E3 Vishay Siliconix 72367.pdf Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
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SI6993DQ-T1-E3 SI6993DQ-T1-E3 Vishay Siliconix 72369.pdf Description: MOSFET 2P-CH 30V 3.6A 8TSSOP
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SI7100DN-T1-E3 SI7100DN-T1-E3 Vishay Siliconix si7100dn.pdf Description: MOSFET N-CH 8V 35A 1212-8
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SI7106DN-T1-E3 SI7106DN-T1-E3 Vishay Siliconix si7106dn.pdf Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
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SI7107DN-T1-E3 SI7107DN-T1-E3 Vishay Siliconix si7107dn.pdf Description: MOSFET P-CH 20V 9.8A 1212-8
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SI7108DN-T1-E3 SI7108DN-T1-E3 Vishay Siliconix si7108dn.pdf description Description: MOSFET N-CH 20V 14A PPAK1212-8
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SI7110DN-T1-E3 SI7110DN-T1-E3 Vishay Siliconix si7110dn.pdf Description: MOSFET N-CH 20V 13.5A PPAK1212-8
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SI7112DN-T1-E3 SI7112DN-T1-E3 Vishay Siliconix si7112dn.pdf Description: MOSFET N-CH 30V 11.3A PPAK1212-8
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SI7113DN-T1-E3 SI7113DN-T1-E3 Vishay Siliconix si7113dn.pdf Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
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SI7114DN-T1-E3 SI7114DN-T1-E3 Vishay Siliconix si7114dn.pdf Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
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SI7116DN-T1-E3 SI7116DN-T1-E3 Vishay Siliconix si7116dn.pdf Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
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SI7117DN-T1-E3 SI7117DN-T1-E3 Vishay Siliconix si7117dn.pdf Description: MOSFET P-CH 150V 2.17A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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SI7119DN-T1-E3 SI7119DN-T1-E3 Vishay Siliconix si7119dn.pdf Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V
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SI7136DP-T1-E3 SI7136DP-T1-E3 Vishay Siliconix 73601.pdf Description: MOSFET N-CH 20V 30A PPAK SO-8
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SI7138DP-T1-E3 SI7138DP-T1-E3 Vishay Siliconix si7138dp.pdf Description: MOSFET N-CH 60V 30A PPAK SO-8
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SI7148DP-T1-E3 SI7148DP-T1-E3 Vishay Siliconix 73314.pdf Description: MOSFET N-CH 75V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
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SI7212DN-T1-E3 SI7212DN-T1-E3 Vishay Siliconix si7212dn.pdf Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
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SI7214DN-T1-E3 SI7214DN-T1-E3 Vishay Siliconix si7214dn.pdf Description: MOSFET 2N-CH 30V 4.6A 1212-8
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SI7216DN-T1-E3 SI7216DN-T1-E3 Vishay Siliconix si7216dn.pdf Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
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SI7220DN-T1-E3 SI7220DN-T1-E3 Vishay Siliconix si7220dn.pdf Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
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SI7222DN-T1-E3 SI7222DN-T1-E3 Vishay Siliconix 73439.pdf Description: MOSFET 2N-CH 40V 6A 1212-8
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SI7308DN-T1-E3 SI7308DN-T1-E3 Vishay Siliconix 73419.pdf Description: MOSFET N-CH 60V 6A 1212-8
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SI7309DN-T1-E3 SI7309DN-T1-E3 Vishay Siliconix si7309dn.pdf Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
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6000+0.65 EUR
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SI7336ADP-T1-E3 SI7336ADP-T1-E3 Vishay Siliconix si7336adp.pdf Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
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3000+2.13 EUR
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SI7344DP-T1-E3 SI7344DP-T1-E3 Vishay Siliconix Si7344DP.pdf Description: MOSFET N-CH 20V 11A PPAK SO-8
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SI7366DP-T1-E3 SI7366DP-T1-E3 Vishay Siliconix 72296.pdf Description: MOSFET N-CH 20V 13A PPAK SO-8
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SI7370DP-T1-E3 SI7370DP-T1-E3 Vishay Siliconix si7370dp.pdf Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
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3000+1.65 EUR
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SI5855DC-T1-E3
SI5855DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI5856DC-T1-E3
SI5856DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI5857DU-T1-E3 si5857du.pdf
SI5857DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A PPAK CHIPFET
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SI5858DU-T1-E3 si5858du.pdf
SI5858DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A PPAK CHIPFET
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SI5902DC-T1-E3 si5902dc.pdf
SI5902DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 2.9A 1206-8
Produkt ist nicht verfügbar
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SI5903DC-T1-E3 71054.pdf
SI5903DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.1A 1206-8
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SI5904DC-T1-E3
SI5904DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.1A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5908DC-T1-E3 si5908dc.pdf
SI5908DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.90 EUR
6000+0.84 EUR
Mindestbestellmenge: 3000
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SI5920DC-T1-E3 si5920dc.pdf
SI5920DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 4V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5933DC-T1-E3
SI5933DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
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SI5935DC-T1-E3 si5935dc.pdf
SI5935DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3A 1206-8
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SI5938DU-T1-E3 73463.pdf
SI5938DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 8PWRPAK
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SI5943DU-T1-E3 73669.pdf
SI5943DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 6A 8PWRPAK
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SI5944DU-T1-E3 73683.pdf
SI5944DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A 8PWRPAK
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SI5947DU-T1-E3 73695.pdf
SI5947DU-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A 8PWRPAK
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Si6410DQ-T1-E3 70661.pdf
Si6410DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8TSSOP
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SI6415DQ-T1-E3 70639.pdf
SI6415DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
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SI6423DQ-T1-E3 72257.pdf
SI6423DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8TSSOP
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SI6433BDQ-T1-E3 72511.pdf
SI6433BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
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SI6459BDQ-T1-E3 72518.pdf
SI6459BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
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SI6463BDQ-T1-E3 doc?72018
SI6463BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
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SI6544BDQ-T1-E3 72244.pdf
SI6544BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
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SI6913DQ-T1-E3 si6913dq.pdf
SI6913DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8TSSOP
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SI6924AEDQ-T1-E3
SI6924AEDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 28V 4.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 28V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-TSSOP
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SI6925ADQ-T1-E3 72623.pdf
SI6925ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.3A 8TSSOP
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SI6926ADQ-T1-E3 72754.pdf
SI6926ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
Mindestbestellmenge: 3000
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Si6928DQ-T1-E3 70663.pdf
Si6928DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 8TSSOP
Produkt ist nicht verfügbar
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SI6943BDQ-T1-E3 72016.pdf
SI6943BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 2.3A 8TSSOP
Produkt ist nicht verfügbar
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Si6954ADQ-T1-E3 71130.pdf
Si6954ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.1A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.58 EUR
6000+0.54 EUR
9000+0.52 EUR
15000+0.51 EUR
Mindestbestellmenge: 3000
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SI6963BDQ-T1-E3
SI6963BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.4A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 830mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar
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SI6968BEDQ-T1-E3 si6968be.pdf
SI6968BEDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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SI6969BDQ-T1-E3 72017.pdf
SI6969BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4A 8TSSOP
Produkt ist nicht verfügbar
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SI6981DQ-T1-E3 si6981dq.pdf
SI6981DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8-TSSOP
Produkt ist nicht verfügbar
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SI6983DQ-T1-E3 72367.pdf
SI6983DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.6A 8TSSOP
Produkt ist nicht verfügbar
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SI6993DQ-T1-E3 72369.pdf
SI6993DQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3.6A 8TSSOP
Produkt ist nicht verfügbar
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SI7100DN-T1-E3 si7100dn.pdf
SI7100DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 35A 1212-8
Produkt ist nicht verfügbar
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SI7106DN-T1-E3 si7106dn.pdf
SI7106DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.30 EUR
Mindestbestellmenge: 3000
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SI7107DN-T1-E3 si7107dn.pdf
SI7107DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
Produkt ist nicht verfügbar
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SI7108DN-T1-E3 description si7108dn.pdf
SI7108DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.58 EUR
6000+1.53 EUR
Mindestbestellmenge: 3000
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SI7110DN-T1-E3 si7110dn.pdf
SI7110DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Produkt ist nicht verfügbar
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SI7112DN-T1-E3 si7112dn.pdf
SI7112DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Produkt ist nicht verfügbar
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SI7113DN-T1-E3 si7113dn.pdf
SI7113DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 13.2A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.98 EUR
Mindestbestellmenge: 3000
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SI7114DN-T1-E3 si7114dn.pdf
SI7114DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI7116DN-T1-E3 si7116dn.pdf
SI7116DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.5A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Produkt ist nicht verfügbar
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SI7117DN-T1-E3 si7117dn.pdf
SI7117DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.79 EUR
Mindestbestellmenge: 3000
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SI7119DN-T1-E3 si7119dn.pdf
SI7119DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.65 EUR
6000+0.62 EUR
Mindestbestellmenge: 3000
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SI7136DP-T1-E3 73601.pdf
SI7136DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Produkt ist nicht verfügbar
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SI7138DP-T1-E3 si7138dp.pdf
SI7138DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A PPAK SO-8
Produkt ist nicht verfügbar
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SI7148DP-T1-E3 73314.pdf
SI7148DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 35 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.13 EUR
Mindestbestellmenge: 3000
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SI7212DN-T1-E3 si7212dn.pdf
SI7212DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.9A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.90 EUR
6000+1.83 EUR
9000+1.77 EUR
Mindestbestellmenge: 3000
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SI7214DN-T1-E3 si7214dn.pdf
SI7214DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.6A 1212-8
Produkt ist nicht verfügbar
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SI7216DN-T1-E3 si7216dn.pdf
SI7216DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 20V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.01 EUR
6000+0.97 EUR
Mindestbestellmenge: 3000
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SI7220DN-T1-E3 si7220dn.pdf
SI7220DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.4A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
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SI7222DN-T1-E3 73439.pdf
SI7222DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A 1212-8
Produkt ist nicht verfügbar
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SI7308DN-T1-E3 73419.pdf
SI7308DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 1212-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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SI7309DN-T1-E3 si7309dn.pdf
SI7309DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
6000+0.65 EUR
Mindestbestellmenge: 3000
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SI7336ADP-T1-E3 si7336adp.pdf
SI7336ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.13 EUR
Mindestbestellmenge: 3000
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SI7344DP-T1-E3 Si7344DP.pdf
SI7344DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 11A PPAK SO-8
Produkt ist nicht verfügbar
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SI7366DP-T1-E3 72296.pdf
SI7366DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Produkt ist nicht verfügbar
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SI7370DP-T1-E3 si7370dp.pdf
SI7370DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.65 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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