Die Produkte vishay siliconix

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SI4874BDY-T1-E3 SI4874BDY-T1-E3 73058.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4874
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
auf Bestellung 2137 Stücke
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SI8429DB-T1-E1 SI8429DB-T1-E1 si8429db.pdf Vishay Siliconix Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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Vishay Siliconix Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
FET Type: P-Channel
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Lieferzeit 21-28 Tag (e)
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10+ 2.63 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.51 EUR
1000+ 1.19 EUR
SI8424DB-T1-E1 SI8424DB-T1-E1 si8424db.pdf Vishay Siliconix Description: MOSFET N-CH 8V 12.2A 2X2 4-MFP
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR426DP-T1-GE3 SIR426DP-T1-GE3 sir426dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 30A PPAK SO-8
Base Part Number: SIR426
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5402BDC-T1-E3 SI5402BDC-T1-E3 73051.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5402BDC-T1-GE3 SI5402BDC-T1-GE3 73051.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.9A 1206-8
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5403DC-T1-GE3 SI5403DC-T1-GE3 si5403dc.pdf Vishay Siliconix Description: MOSFET P-CH 30V 6A 1206-8
Base Part Number: SI5403
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET P-CH 30V 6A 1206-8
FET Type: P-Channel
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SI5403
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET P-CH 30V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 1853 Stücke
Lieferzeit 21-28 Tag (e)
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SI7309DN-T1-GE3 SI7309DN-T1-GE3 73434.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8A 1212-8 PPAK
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7309
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 60V 8A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SI7309
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4027 Stücke
Lieferzeit 21-28 Tag (e)
SISA10DN-T1-GE3 SISA10DN-T1-GE3 sisa10dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 30A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 30A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3110 Stücke
Lieferzeit 21-28 Tag (e)
SI6435ADQ-T1-GE3 SI6435ADQ-T1-GE3 71104.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.7A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6435ADQ-T1-E3 SI6435ADQ-T1-E3 71104.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.7A 8-TSSOP
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3483DV-T1-E3 SI3483DV-T1-E3 72078.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.7A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3430DV-T1-E3 SI3430DV-T1-E3 si3430dv.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET N-CH 100V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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Vishay Siliconix Description: MOSFET N-CH 100V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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SI7716ADN-T1-GE3 SI7716ADN-T1-GE3 SI7716ADN.pdf Vishay Siliconix Description: MOSFET N-CH 30V 16A PPAK1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11579 Stücke - Preis und Lieferfrist anzeigen
SI7613DN-T1-GE3 SI7613DN-T1-GE3 si7613dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 35A PPAK1212-8
Base Part Number: SI7613
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET P-CH 20V 35A PPAK1212-8
Base Part Number: SI7613
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V
Vgs (Max): ±16V
auf Bestellung 37841 Stücke
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SI7411DN-T1-GE3 SI7411DN-T1-GE3 72399.pdf Vishay Siliconix Description: MOSFET P-CH 20V 7.5A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 300µA
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P04-13L-GE3 SUD50P04-13L-GE3 sud50p04.pdf Vishay Siliconix Description: MOSFET P-CH 40V 60A TO252
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD19P06-60-GE3 SUD19P06-60-GE3 sud19p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 18.3A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7629DN-T1-GE3 SI7629DN-T1-GE3 si7629dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 35A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7629
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 10V
Vgs (Max): ±12V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 35A PPAK1212-8
Base Part Number: SI7629
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3277 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 35A 1212-8 PPAK
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
auf Bestellung 3857 Stücke
Lieferzeit 21-28 Tag (e)
SI8409DB-T1-E1 SI8409DB-T1-E1 si8409db.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11956 Stücke - Preis und Lieferfrist anzeigen
SIA432DJ-T1-GE3 SIA432DJ-T1-GE3 sia432dj.pdf Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA432
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA432
auf Bestellung 852 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 12A SC70-6
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 9372 Stücke
Lieferzeit 21-28 Tag (e)
SI3438DV-T1-GE3 SI3438DV-T1-GE3 si3438dv.pdf Vishay Siliconix Description: MOSFET N-CH 40V 7.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3438
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 7.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Base Part Number: SI3438
Package / Case: SOT-23-6 Thin, TSOT-23-6
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4449 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 7.4A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
auf Bestellung 7630 Stücke
Lieferzeit 21-28 Tag (e)
SIA814DJ-T1-GE3 SIA814DJ-T1-GE3 sia814dj.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1222 Stücke - Preis und Lieferfrist anzeigen
SI7810DN-T1-E3 SI7810DN-T1-E3 70689.pdf Vishay Siliconix Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7810
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 83428 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Base Part Number: SI7810
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2950 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 83428 Stücke - Preis und Lieferfrist anzeigen
SI7625DN-T1-GE3 SI7625DN-T1-GE3 si7625dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7625
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 29498 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 30V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7625
auf Bestellung 7682 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 29498 Stücke - Preis und Lieferfrist anzeigen
SI3495DV-T1-E3 SI3495DV-T1-E3 si3495dv.pdf Vishay Siliconix Description: MOSFET P-CH 20V 5.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Vgs(th) (Max) @ Id: 750mV @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
SI4104DY-T1-GE3 SI4104DY-T1-GE3 si4104dy.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.6A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9120TRLPBF IRFR9120TRLPBF sihfr912.pdf Vishay Siliconix Description: MOSFET P-CH 100V 5.6A DPAK
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2631 Stücke - Preis und Lieferfrist anzeigen
SI4462DY-T1-E3 SI4462DY-T1-E3 doc?72093 Vishay Siliconix Description: MOSFET N-CH 200V 1.15A 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 200V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 144000 Stücke - Preis und Lieferfrist anzeigen
SIR466DP-T1-GE3 SIR466DP-T1-GE3 sir466dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR466
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 115550 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Base Part Number: SIR466
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 6112 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 115550 Stücke - Preis und Lieferfrist anzeigen
SI7308DN-T1-E3 SI7308DN-T1-E3 73419.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI7308
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 478 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 6A 1212-8
Base Part Number: SI7308
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
auf Bestellung 3897 Stücke
Lieferzeit 21-28 Tag (e)
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SI7308DN-T1-GE3 SI7308DN-T1-GE3 73419.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 60V 6A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2956 Stücke
Lieferzeit 21-28 Tag (e)
SI5410DU-T1-GE3 SI5410DU-T1-GE3 si5410du.pdf Vishay Siliconix Description: MOSFET N-CH 40V 12A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Base Part Number: SI5410
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
SIR462DP-T1-GE3 SIR462DP-T1-GE3 sir462dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10266 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 51 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10266 Stücke - Preis und Lieferfrist anzeigen
9+ 3.07 EUR
10+ 2.76 EUR
SI8415DB-T1-E1 SI8415DB-T1-E1 73210.pdf Vishay Siliconix Description: MOSFET P-CH 12V 5.3A 2X2 4-MFP
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6463BDQ-T1-E3 SI6463BDQ-T1-E3 doc?72018 Vishay Siliconix Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
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Lieferzeit 21-28 Tag (e)
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SI6463BDQ-T1-GE3 SI6463BDQ-T1-GE3 72018.pdf Vishay Siliconix Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
SI4464DY-T1-E3 SI4464DY-T1-E3 72051.pdf Vishay Siliconix Description: MOSFET N-CH 200V 1.7A 8SO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4464
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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Vishay Siliconix Description: MOSFET N-CH 200V 1.7A 8SO
Base Part Number: SI4464
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4523 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 82225 Stücke - Preis und Lieferfrist anzeigen
SIHA105N60EF-GE3 siha105n60ef.pdf Vishay Siliconix Description: MOSFET E SERIES THIN-LEAD TO-220
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHA105
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1741 Stücke - Preis und Lieferfrist anzeigen
SIUD403ED-T1-GE3 SIUD403ED-T1-GE3 siud403ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 500MA PWRPAK0806
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 10V
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
auf Bestellung 5007 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 279 Stücke - Preis und Lieferfrist anzeigen
DG9454EEN-T1-GE4 DG9454EEN-T1-GE4 dg9454e.pdf Vishay Siliconix Description: IC SWITCH/MUX SPDT 16MINIQFN
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.1pF, 4pF
Switch Time (Ton, Toff) (Max): 110ns, 91ns
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -73dB @ 1MHz
Charge Injection: 5.84pC
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 356MHz
On-State Resistance (Max): 103Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC SWITCH/MUX SPDT 16MINIQFN
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.1pF, 4pF
Switch Time (Ton, Toff) (Max): 110ns, 91ns
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -73dB @ 1MHz
Charge Injection: 5.84pC
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 356MHz
On-State Resistance (Max): 103Ohm
auf Bestellung 553 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.06 EUR
10+ 3.64 EUR
25+ 3.43 EUR
100+ 2.92 EUR
250+ 2.74 EUR
500+ 2.4 EUR
SMMB911DK-T1-GE3 SMMB911DK-T1-GE3.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Supplier Device Package: PowerPAK® SC-75-6L Dual
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VQ1006P 70214.pdf Vishay Siliconix Description: MOSFET 4N-CH 90V 0.4A 14DIP
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA
Drain to Source Voltage (Vdss): 90V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VQ1006P-E3 70214.pdf Vishay Siliconix Description: MOSFET 4N-CH 90V 0.4A 14DIP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA
Drain to Source Voltage (Vdss): 90V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VQ2001P 70217.pdf Vishay Siliconix Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
FET Type: 4 P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VQ3001P-E3 70221.pdf Vishay Siliconix Description: MOSFET 2N/2P-CH 30V 14DIP
Part Status: Obsolete
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N and 2 P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VQ1006P-2 70214.pdf Vishay Siliconix Description: MOSFET 4N-CH 90V 0.4A 14DIP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA
Drain to Source Voltage (Vdss): 90V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4874BDY-T1-E3 73058.pdf
SI4874BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4874
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
auf Bestellung 2137 Stücke
Lieferzeit 21-28 Tag (e)
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SI8429DB-T1-E1 si8429db.pdf
SI8429DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2900 Stücke
Lieferzeit 21-28 Tag (e)
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SI8429DB-T1-E1 si8429db.pdf
SI8429DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: 4-Microfoot
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
FET Type: P-Channel
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15745 Stücke - Preis und Lieferfrist anzeigen
10+ 2.63 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.51 EUR
1000+ 1.19 EUR
SI8424DB-T1-E1 si8424db.pdf
SI8424DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12.2A 2X2 4-MFP
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR426DP-T1-GE3 sir426dp.pdf
SIR426DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Base Part Number: SIR426
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5402BDC-T1-E3 73051.pdf
SI5402BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5402BDC-T1-GE3 73051.pdf
SI5402BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A 1206-8
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5403DC-T1-GE3 si5403dc.pdf
SI5403DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 1206-8
Base Part Number: SI5403
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI5403DC-T1-GE3 si5403dc.pdf
SI5403DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 1206-8
FET Type: P-Channel
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SI5403
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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SI5403DC-T1-GE3 si5403dc.pdf
SI5403DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.3W
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
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SI7309DN-T1-GE3 73434.pdf
SI7309DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A 1212-8 PPAK
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7309
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
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SI7309DN-T1-GE3 73434.pdf
SI7309DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Base Part Number: SI7309
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SISA10DN-T1-GE3 sisa10dn.pdf
SISA10DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
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SISA10DN-T1-GE3 sisa10dn.pdf
SISA10DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2425pF @ 15V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Part Status: Active
Packaging: Cut Tape (CT)
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SI6435ADQ-T1-GE3 71104.pdf
SI6435ADQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6435ADQ-T1-E3 71104.pdf
SI6435ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 8-TSSOP
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3483DV-T1-E3 72078.pdf
SI3483DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.7A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3430DV-T1-E3 si3430dv.pdf
SI3430DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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SI3430DV-T1-E3 si3430dv.pdf
SI3430DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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SI3430DV-T1-E3 si3430dv.pdf
SI3430DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
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SI7716ADN-T1-GE3 SI7716ADN.pdf
SI7716ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7613DN-T1-GE3 si7613dn.pdf
SI7613DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Base Part Number: SI7613
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI7613DN-T1-GE3 si7613dn.pdf
SI7613DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Base Part Number: SI7613
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 3.8W (Ta), 52.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2620pF @ 10V
Vgs (Max): ±16V
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SI7411DN-T1-GE3 72399.pdf
SI7411DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 300µA
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P04-13L-GE3 sud50p04.pdf
SUD50P04-13L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 60A TO252
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3W (Ta), 93.7W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD19P06-60-GE3 sud19p06.pdf
SUD19P06-60-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18.3A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7629DN-T1-GE3 si7629dn.pdf
SI7629DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7629
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 10V
Vgs (Max): ±12V
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SI7629DN-T1-GE3 si7629dn.pdf
SI7629DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Base Part Number: SI7629
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SI7629DN-T1-GE3 si7629dn.pdf
SI7629DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8 PPAK
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 5790pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
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SI8409DB-T1-E1 si8409db.pdf
SI8409DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA432DJ-T1-GE3 sia432dj.pdf
SIA432DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA432
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA432DJ-T1-GE3 sia432dj.pdf
SIA432DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA432
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SIA432DJ-T1-GE3 sia432dj.pdf
SIA432DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC70-6
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 19.2W
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
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SI3438DV-T1-GE3 si3438dv.pdf
SI3438DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3438
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
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SI3438DV-T1-GE3 si3438dv.pdf
SI3438DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Base Part Number: SI3438
Package / Case: SOT-23-6 Thin, TSOT-23-6
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI3438DV-T1-GE3 si3438dv.pdf
SI3438DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 7.4A 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
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SIA814DJ-T1-GE3 sia814dj.pdf
SIA814DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 61 mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Schottky Diode (Isolated)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7810DN-T1-E3 70689.pdf
SI7810DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI7810
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7810DN-T1-E3 70689.pdf
SI7810DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Base Part Number: SI7810
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI7625DN-T1-GE3 si7625dn.pdf
SI7625DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7625
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SI7625DN-T1-GE3 si7625dn.pdf
SI7625DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4427pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7625
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SI3495DV-T1-E3 si3495dv.pdf
SI3495DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.3A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
Vgs(th) (Max) @ Id: 750mV @ 250µA
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4104DY-T1-GE3 si4104dy.pdf
SI4104DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.6A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 50V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR9120TRLPBF sihfr912.pdf
IRFR9120TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4462DY-T1-E3 doc?72093
SI4462DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.15A 8-SOIC
Supplier Device Package: 8-SOIC N
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 480 mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 200V
FET Feature: Logic Level Gate
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR466DP-T1-GE3 sir466dp.pdf
SIR466DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIR466
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
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SIR466DP-T1-GE3 sir466dp.pdf
SIR466DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Base Part Number: SIR466
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI7308DN-T1-E3 73419.pdf
SI7308DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SI7308
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SI7308DN-T1-E3 73419.pdf
SI7308DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 1212-8
Base Part Number: SI7308
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
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SI7308DN-T1-GE3 73419.pdf
SI7308DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7308DN-T1-GE3 73419.pdf
SI7308DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2956 Stücke
Lieferzeit 21-28 Tag (e)
SI5410DU-T1-GE3 si5410du.pdf
SI5410DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Base Part Number: SI5410
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5410DU-T1-GE3 si5410du.pdf
SI5410DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 12A PPAK CHIPFET
Supplier Device Package: PowerPAK® ChipFet Single
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 31W
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
auf Bestellung 15593 Stücke
Lieferzeit 21-28 Tag (e)
SIR462DP-T1-GE3 sir462dp.pdf
SIR462DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR462DP-T1-GE3 sir462dp.pdf
SIR462DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 51 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10266 Stücke - Preis und Lieferfrist anzeigen
9+ 3.07 EUR
10+ 2.76 EUR
SI8415DB-T1-E1 73210.pdf
SI8415DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.3A 2X2 4-MFP
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.47W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6463BDQ-T1-E3 doc?72018
SI6463BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25000 Stücke - Preis und Lieferfrist anzeigen
SI6463BDQ-T1-GE3 72018.pdf
SI6463BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Power - Max: 1.05W
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 15 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
auf Bestellung 24000 Stücke
Lieferzeit 21-28 Tag (e)
SI4464DY-T1-E3 72051.pdf
SI4464DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI4464
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 86748 Stücke - Preis und Lieferfrist anzeigen
SI4464DY-T1-E3 72051.pdf
SI4464DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 8SO
Base Part Number: SI4464
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SIHA105N60EF-GE3 siha105n60ef.pdf
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES THIN-LEAD TO-220
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHA105
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1741 Stücke - Preis und Lieferfrist anzeigen
SIUD403ED-T1-GE3 siud403ed.pdf
SIUD403ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PWRPAK0806
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 10V
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
auf Bestellung 5007 Stücke
Lieferzeit 21-28 Tag (e)
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DG9454EEN-T1-GE4 dg9454e.pdf
DG9454EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH/MUX SPDT 16MINIQFN
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.1pF, 4pF
Switch Time (Ton, Toff) (Max): 110ns, 91ns
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -73dB @ 1MHz
Charge Injection: 5.84pC
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 356MHz
On-State Resistance (Max): 103Ohm
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG9454EEN-T1-GE4 dg9454e.pdf
DG9454EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH/MUX SPDT 16MINIQFN
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.1pF, 4pF
Switch Time (Ton, Toff) (Max): 110ns, 91ns
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -73dB @ 1MHz
Charge Injection: 5.84pC
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 356MHz
On-State Resistance (Max): 103Ohm
auf Bestellung 553 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.06 EUR
10+ 3.64 EUR
25+ 3.43 EUR
100+ 2.92 EUR
250+ 2.74 EUR
500+ 2.4 EUR
SMMB911DK-T1-GE3 SMMB911DK-T1-GE3.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Supplier Device Package: PowerPAK® SC-75-6L Dual
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VQ1006P 70214.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA
Drain to Source Voltage (Vdss): 90V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VQ1006P-E3 70214.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA
Drain to Source Voltage (Vdss): 90V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VQ2001P 70217.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4P-CH 30V 0.6A 14DIP
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
FET Type: 4 P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 12V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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VQ3001P-E3 70221.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N/2P-CH 30V 14DIP
Part Status: Obsolete
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 1Ohm @ 1A, 12V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 850mA, 600mA
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N and 2 P-Channel
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
VQ1006P-2 70214.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 4N-CH 90V 0.4A 14DIP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA
Drain to Source Voltage (Vdss): 90V
FET Feature: Logic Level Gate
FET Type: 4 N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 39 Stücke - Preis und Lieferfrist anzeigen
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