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SI8472DB-T2-E1 SI8472DB-T2-E1 Vishay Siliconix si8472db.pdf Description: MOSFET N-CH 20V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 6297 Stücke:
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22+0.83 EUR
32+0.56 EUR
100+0.4 EUR
500+0.36 EUR
1000+0.33 EUR
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SI9926CDY-T1-E3 SI9926CDY-T1-E3 Vishay Siliconix si9926cd.pdf Description: MOSFET 2N-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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100+1.34 EUR
500+1.06 EUR
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SIA400EDJ-T1-GE3 SIA400EDJ-T1-GE3 Vishay Siliconix sia400edj.pdf Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
auf Bestellung 149957 Stücke:
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19+0.93 EUR
100+0.6 EUR
500+0.46 EUR
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SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 Vishay Siliconix sia427adj.pdf Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
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SIA447DJ-T1-GE3 SIA447DJ-T1-GE3 Vishay Siliconix sia447dj.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
auf Bestellung 64098 Stücke:
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SIR172DP-T1-GE3 SIR172DP-T1-GE3 Vishay Siliconix sir172dp.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Produkt ist nicht verfügbar
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SIR418DP-T1-GE3 SIR418DP-T1-GE3 Vishay Siliconix sir418dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 14525 Stücke:
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6+3.19 EUR
10+2.02 EUR
100+1.36 EUR
500+1.08 EUR
1000+0.99 EUR
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DG9408DN-T1-E4 DG9408DN-T1-E4 Vishay Siliconix 71870.pdf Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 2343 Stücke:
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SI1414DH-T1-GE3 SI1414DH-T1-GE3 Vishay Siliconix si1414dh.pdf Description: MOSFET N-CH 30V 4A SOT-363
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SI1489EDH-T1-GE3 SI1489EDH-T1-GE3 Vishay Siliconix si1489ed.pdf Description: MOSFET P-CH 8V 2A SOT-363
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SI4866BDY-T1-E3 SI4866BDY-T1-E3 Vishay Siliconix si4866bd.pdf Description: MOSFET N-CH 12V 21.5A 8-SOIC
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SIC521ACD-T1-GE3 SIC521ACD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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3000+1.79 EUR
6000+1.72 EUR
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SIC521CD-T1-GE3 SIC521CD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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SIC530CD-T1-GE3 SIC530CD-T1-GE3 Vishay Siliconix sic530.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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3000+1.94 EUR
6000+1.89 EUR
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SIC531ACD-T1-GE3 SIC531ACD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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SiC531CD-T1-GE3 SiC531CD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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SiC532CD-T1-GE3 SiC532CD-T1-GE3 Vishay Siliconix sic532.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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SIC620ARCD-T1-GE3 SIC620ARCD-T1-GE3 Vishay Siliconix sic620r.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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SiC631CD-T1-GE3 SiC631CD-T1-GE3 Vishay Siliconix sic631.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.91 EUR
Mindestbestellmenge: 3000
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SIC632ACD-T1-GE3 SIC632ACD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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SiC632CD-T1-GE3 SiC632CD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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Lieferzeit 10-14 Tag (e)
3000+1.69 EUR
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SIC521ACD-T1-GE3 SIC521ACD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 9000 Stücke:
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SIC521CD-T1-GE3 SIC521CD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 1011 Stücke:
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5+3.89 EUR
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25+3.31 EUR
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250+2.64 EUR
500+2.31 EUR
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SIC530CD-T1-GE3 SIC530CD-T1-GE3 Vishay Siliconix sic530.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 14162 Stücke:
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5+4.14 EUR
10+2.97 EUR
25+2.67 EUR
100+2.35 EUR
250+2.2 EUR
500+2.11 EUR
1000+2.03 EUR
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SIC531ACD-T1-GE3 SIC531ACD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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SiC531CD-T1-GE3 SiC531CD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 499 Stücke:
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5+3.8 EUR
10+3.42 EUR
25+3.23 EUR
100+2.75 EUR
250+2.58 EUR
Mindestbestellmenge: 5
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SiC532CD-T1-GE3 SiC532CD-T1-GE3 Vishay Siliconix sic532.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 2967 Stücke:
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5+4.14 EUR
10+3.72 EUR
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SiC631CD-T1-GE3 SiC631CD-T1-GE3 Vishay Siliconix sic631.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
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SIC632ACD-T1-GE3 SIC632ACD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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SiC632CD-T1-GE3 SiC632CD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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SiC770CD-T1-GE3 SiC770CD-T1-GE3 Vishay Siliconix Description: IC CTLR PFC STAGE PPAK MLP66-40
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DG3535DB-T1-E1 Vishay Siliconix Description: IC SW SPDTX2 400MOHM 10MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
Supplier Device Package: 10-Micro Foot® (2x1.5)
Voltage - Supply, Single (V+): 2.7V ~ 3.3V
Charge Injection: 21pC
Crosstalk: -69dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 82ns, 73ns
Channel Capacitance (CS(off), CD(off)): 145pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Vishay Siliconix sihh11n60ef.pdf Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
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SiHH14N60EF-T1-GE3 SiHH14N60EF-T1-GE3 Vishay Siliconix sihh14n60ef.pdf Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
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SiHH14N65E-T1-GE3 SiHH14N65E-T1-GE3 Vishay Siliconix sihh14n65e.pdf Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
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SiHH21N65E-T1-GE3 SiHH21N65E-T1-GE3 Vishay Siliconix sihh21n65e.pdf Description: MOSFET N-CH 650V 20.3A PPAK 8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 100 V
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SiHG33N65E-GE3 SiHG33N65E-GE3 Vishay Siliconix sihg33n65e.pdf Description: MOSFET N-CH 650V 32.4A TO247AC
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SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Vishay Siliconix sihh11n60ef.pdf Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
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SiHH14N60EF-T1-GE3 SiHH14N60EF-T1-GE3 Vishay Siliconix sihh14n60ef.pdf Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
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SiHH14N65E-T1-GE3 SiHH14N65E-T1-GE3 Vishay Siliconix sihh14n65e.pdf Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
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DG9424EDQ-T1-GE3 DG9424EDQ-T1-GE3 Vishay Siliconix dg9424e.pdf Description: IC SWITCH SPST-NOX4 3OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
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DG9425EDQ-T1-GE3 DG9425EDQ-T1-GE3 Vishay Siliconix dg9424e.pdf Description: IC SWITCH SPST-NCX4 3OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG9426EDQ-T1-GE3 DG9426EDQ-T1-GE3 Vishay Siliconix dg9424e.pdf Description: IC SW SPST-NO/NCX4 3OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG408LEDQ-T1-GE3 DG408LEDQ-T1-GE3 Vishay Siliconix dg408le.pdf Description: IC MUX 8:1 23OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: -11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG408LEDY-T1-GE3 DG408LEDY-T1-GE3 Vishay Siliconix dg408le.pdf Description: IC MUX 8:1 23OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: -11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG409LEDQ-T1-GE3 DG409LEDQ-T1-GE3 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
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DG409LEDY-T1-GE3 DG409LEDY-T1-GE3 Vishay Siliconix dg408le.pdf Description: IC SWITCH SP4T X 2 23OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
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DG411LEDQ-T1-GE3 DG411LEDQ-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG411LEDY-T1-GE3 DG411LEDY-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG412LEDQ-T1-GE3 DG412LEDQ-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG412LEDY-T1-GE3 DG412LEDY-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG413LEDQ-T1-GE3 DG413LEDQ-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SW SPST-NO/NCX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG413LEDY-T1-GE3 DG413LEDY-T1-GE3 Vishay Siliconix dg411le.pdf Description: IC SW SPST-NO/NCX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG441LEDQ-T1-GE3 DG441LEDQ-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG441LEDY-T1-GE3 DG441LEDY-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG442LEDQ-T1-GE3 DG442LEDQ-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
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DG442LEDY-T1-GE3 DG442LEDY-T1-GE3 Vishay Siliconix dg441le.pdf Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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DG4051EEQ-T1-GE3 DG4051EEQ-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC MUX 8:1 78OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG4051EEY-T1-GE3 DG4051EEY-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC MUX 8:1 78OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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DG4052EEQ-T1-GE3 DG4052EEQ-T1-GE3 Vishay Siliconix dg4051e.pdf Description: IC SWITCH SP4T X 2 78OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
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SI8472DB-T2-E1 si8472db.pdf
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
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SI9926CDY-T1-E3 si9926cd.pdf
SI9926CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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SIA400EDJ-T1-GE3 sia400edj.pdf
SIA400EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
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SIA427ADJ-T1-GE3 sia427adj.pdf
SIA427ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
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SIA447DJ-T1-GE3 sia447dj.pdf
SIA447DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
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SIR172DP-T1-GE3 sir172dp.pdf
SIR172DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Produkt ist nicht verfügbar
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SIR418DP-T1-GE3 sir418dp.pdf
SIR418DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
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DG9408DN-T1-E4 71870.pdf
DG9408DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
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SI1414DH-T1-GE3 si1414dh.pdf
SI1414DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A SOT-363
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SI1489EDH-T1-GE3 si1489ed.pdf
SI1489EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 2A SOT-363
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SI4866BDY-T1-E3 si4866bd.pdf
SI4866BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
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SIC521ACD-T1-GE3 sic521a.pdf
SIC521ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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SIC521CD-T1-GE3 sic521a.pdf
SIC521CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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SIC530CD-T1-GE3 sic530.pdf
SIC530CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
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SIC531ACD-T1-GE3 sic531a.pdf
SIC531ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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SiC531CD-T1-GE3 sic531a.pdf
SiC531CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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SiC532CD-T1-GE3 sic532.pdf
SiC532CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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SIC620ARCD-T1-GE3 sic620r.pdf
SIC620ARCD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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SiC631CD-T1-GE3 sic631.pdf
SiC631CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.91 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIC632ACD-T1-GE3 sic632a.pdf
SIC632ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiC632CD-T1-GE3 sic632a.pdf
SiC632CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.69 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIC521ACD-T1-GE3 sic521a.pdf
SIC521ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIC521CD-T1-GE3 sic521a.pdf
SIC521CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 1011 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+3.5 EUR
25+3.31 EUR
100+2.82 EUR
250+2.64 EUR
500+2.31 EUR
1000+1.92 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIC530CD-T1-GE3 sic530.pdf
SIC530CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 14162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+2.97 EUR
25+2.67 EUR
100+2.35 EUR
250+2.2 EUR
500+2.11 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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SIC531ACD-T1-GE3 sic531a.pdf
SIC531ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiC531CD-T1-GE3 sic531a.pdf
SiC531CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.8 EUR
10+3.42 EUR
25+3.23 EUR
100+2.75 EUR
250+2.58 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SiC532CD-T1-GE3 sic532.pdf
SiC532CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 2967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
10+3.72 EUR
25+3.51 EUR
100+2.99 EUR
250+2.81 EUR
500+2.45 EUR
1000+2.03 EUR
Mindestbestellmenge: 5
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SiC631CD-T1-GE3 sic631.pdf
SiC631CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 5709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.68 EUR
10+2.74 EUR
25+2.5 EUR
100+2.24 EUR
250+2.12 EUR
500+2.04 EUR
1000+1.98 EUR
Mindestbestellmenge: 5
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SIC632ACD-T1-GE3 sic632a.pdf
SIC632ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.68 EUR
25+2.44 EUR
100+2.19 EUR
250+2.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SiC632CD-T1-GE3 sic632a.pdf
SiC632CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 13172 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
10+2.68 EUR
25+2.44 EUR
100+2.19 EUR
250+2.07 EUR
500+1.99 EUR
1000+1.93 EUR
Mindestbestellmenge: 5
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SiC770CD-T1-GE3
SiC770CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
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DG3535DB-T1-E1
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 400MOHM 10MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
Supplier Device Package: 10-Micro Foot® (2x1.5)
Voltage - Supply, Single (V+): 2.7V ~ 3.3V
Charge Injection: 21pC
Crosstalk: -69dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 82ns, 73ns
Channel Capacitance (CS(off), CD(off)): 145pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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SiHH11N60EF-T1-GE3 sihh11n60ef.pdf
SiHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Produkt ist nicht verfügbar
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SiHH14N60EF-T1-GE3 sihh14n60ef.pdf
SiHH14N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Produkt ist nicht verfügbar
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SiHH14N65E-T1-GE3 sihh14n65e.pdf
SiHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Produkt ist nicht verfügbar
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SiHH21N65E-T1-GE3 sihh21n65e.pdf
SiHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PPAK 8X8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 100 V
Produkt ist nicht verfügbar
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SiHG33N65E-GE3 sihg33n65e.pdf
SiHG33N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 32.4A TO247AC
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
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SiHH11N60EF-T1-GE3 sihh11n60ef.pdf
SiHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 1405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
10+4.91 EUR
100+3.49 EUR
500+3.3 EUR
Mindestbestellmenge: 3
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SiHH14N60EF-T1-GE3 sihh14n60ef.pdf
SiHH14N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.81 EUR
10+5.62 EUR
100+4.03 EUR
500+3.92 EUR
Mindestbestellmenge: 3
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SiHH14N65E-T1-GE3 sihh14n65e.pdf
SiHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Produkt ist nicht verfügbar
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DG9424EDQ-T1-GE3 dg9424e.pdf
DG9424EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 3OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.22 EUR
6000+2.18 EUR
Mindestbestellmenge: 3000
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DG9425EDQ-T1-GE3 dg9424e.pdf
DG9425EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 3OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG9426EDQ-T1-GE3 dg9424e.pdf
DG9426EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 3OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 3Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 38pC
Crosstalk: -77dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 51ns, 35ns
Channel Capacitance (CS(off), CD(off)): 49pF, 37pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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Anzahl Preis
3000+2.44 EUR
6000+2.4 EUR
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DG408LEDQ-T1-GE3 dg408le.pdf
DG408LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 23OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: -11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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DG408LEDY-T1-GE3 dg408le.pdf
DG408LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 23OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: -11pC
Crosstalk: -98dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 25pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
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Anzahl Preis
2500+1.33 EUR
Mindestbestellmenge: 2500
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DG409LEDQ-T1-GE3 dg408le.pdf
DG409LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
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DG409LEDY-T1-GE3 dg408le.pdf
DG409LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 23OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 23Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3.3V ~ 8V
Charge Injection: -10pC
Crosstalk: -109dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 72ns, 47ns
Channel Capacitance (CS(off), CD(off)): 5.5pF, 13.5pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.33 EUR
5000+1.3 EUR
Mindestbestellmenge: 2500
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DG411LEDQ-T1-GE3 dg411le.pdf
DG411LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+1.19 EUR
Mindestbestellmenge: 3000
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DG411LEDY-T1-GE3 dg411le.pdf
DG411LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+1.04 EUR
Mindestbestellmenge: 2500
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DG412LEDQ-T1-GE3 dg411le.pdf
DG412LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG412LEDY-T1-GE3 dg411le.pdf
DG412LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG413LEDQ-T1-GE3 dg411le.pdf
DG413LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
auf Bestellung 3000 Stücke:
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Anzahl Preis
3000+1.31 EUR
Mindestbestellmenge: 3000
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DG413LEDY-T1-GE3 dg411le.pdf
DG413LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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Anzahl Preis
2500+1.16 EUR
Mindestbestellmenge: 2500
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DG441LEDQ-T1-GE3 dg441le.pdf
DG441LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG441LEDY-T1-GE3 dg441le.pdf
DG441LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG442LEDQ-T1-GE3 dg441le.pdf
DG442LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 4
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.11 EUR
6000+1.09 EUR
Mindestbestellmenge: 3000
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DG442LEDY-T1-GE3 dg441le.pdf
DG442LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 26OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 26Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 6.6pC
Crosstalk: -114dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 35ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 4
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Anzahl Preis
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DG4051EEQ-T1-GE3 dg4051e.pdf
DG4051EEQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 78OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 3000 Stücke:
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Anzahl Preis
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DG4051EEY-T1-GE3 dg4051e.pdf
DG4051EEY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 78OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 5000 Stücke:
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Anzahl Preis
2500+1.15 EUR
5000+1.09 EUR
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DG4052EEQ-T1-GE3 dg4051e.pdf
DG4052EEQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 78OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 78Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Voltage - Supply, Dual (V±): ±3V ~ 8V
Charge Injection: 0.3pC
Crosstalk: -105dB @ 100kHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 910mOhm
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.14 EUR
6000+1.08 EUR
Mindestbestellmenge: 3000
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