Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SI4116DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 18A 8SO Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 135000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 25V 18A 8SO Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Packaging: Cut Tape (CT) |
auf Bestellung 8 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 135000 Stücke - Preis und Lieferfrist anzeigen
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.jpg "SI2312BDS-T1-BE3") |
SI2312BDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQJ488EP-T2_GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
.jpg "SIHF9Z34STRL-GE3") |
SIHF9Z34STRL-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CHANNEL 60V Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHA21N60EF-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: N-CHANNEL 600V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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.jpg "IRFR220TRPBF-BE3") |
IRFR220TRPBF-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 200V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFR220PBF-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 200V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHA18N60E-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Drain to Source Voltage (Vdss): 600 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) Vgs (Max): ±30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHP12N50E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 500V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SI2305CDS-T1-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 8-V (D-S) MOSFET Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 5.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2304BDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 750mW (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2307BDS-T1-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V Power Dissipation (Max): 750mW (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHA12N50E-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 500V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: N-CHANNEL 500V Package / Case: TO-220-3 Full Pack Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP14N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP25N60EFL-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP065N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SI2392ADS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRFRC20PBF-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHP25N50E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 500V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP35N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRLR110TRPBF-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQW33N65EF-GE3 |
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Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AD Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 109mOhm @ 16.5A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 3972 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHP23N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP7N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP6N40D-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 400V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHK185N60E-T1-GE3 |
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Vishay Siliconix |
Description: E SERIES POWER MOSFET POWERPAK 1 Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: E SERIES POWER MOSFET POWERPAK 1 Package / Case: 8-PowerBSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Part Status: Active Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e) |
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SIHK055N60EF-T1GE3 |
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Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK®10 x 12 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK®10 x 12 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e) |
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SIHK075N60EF-T1GE3 |
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Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2954 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK®10 x 12 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Part Status: Active Supplier Device Package: PowerPAK®10 x 12 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 192W (Tc) Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 2954 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e) |
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SIP32434BDN-T1E4 |
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Vishay Siliconix |
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W Supplier Device Package: 10-DFN (3x3) Ratio - Input:Output: 1:1 Current - Output (Max): 6A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.8V ~ 23V Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 33mOhm Input Type: Non-Inverting Number of Outputs: 1 Features: Auto Restart, Power Good, Slew Rate Controlled Packaging: Cut Tape (CT) Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 10-VFDFN Exposed Pad Part Status: Active Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO |
auf Bestellung 40 Stücke Lieferzeit 21-28 Tag (e) |
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SIP32434AEVB | Vishay Siliconix |
Description: SIP32434A EVAL BOARD Packaging: Box Function: Electronic Fuses (eFuse) Type: Circuit Protection Supplied Contents: Board(s) Embedded: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIP32434BEVB | Vishay Siliconix |
Description: SIP32434B EVAL BOARD Packaging: Box Function: Electronic Fuses (eFuse) Type: Circuit Protection Supplied Contents: Board(s) Embedded: No Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHP35N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHA25N60EFL-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Vgs (Max): ±30V Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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SIHP22N60AE-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SQJB68EP-T1_BE3 |
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Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) 175C Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2318CDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2318DS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2333DDS-T1-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 12-V (D-S) MOSFET Vgs(th) (Max) @ Id: 1V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHB30N60ET1-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 782 Stücke Lieferzeit 21-28 Tag (e) |
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SIHB30N60ET5-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIP32408EVB |
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Vishay Siliconix |
Description: EVAL BOARD FOR SIP32408 Supplied Contents: Board(s) Utilized IC / Part: SIP32408 Type: Power Management Function: Power Distribution Switch (Load Switch) Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIZ240DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET DUAL N-CH 40V POWERPAIR 3 Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc) Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Part Status: Active Supplier Device Package: 8-PowerPair® (3.3x3.3) Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHP11N80E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 800V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 990 Stücke Lieferzeit 21-28 Tag (e) |
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| SIHA11N80AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 8A TO220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 22 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2040 Stücke - Preis und Lieferfrist anzeigen
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SIHP21N80AEF-GE3 |
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Vishay Siliconix |
Description: E SERIES POWER MOSFET WITH FAST Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole |
auf Bestellung 1025 Stücke Lieferzeit 21-28 Tag (e) |
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SIHA21N80AEF-GE3 |
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Vishay Siliconix |
Description: EF SERIES POWER MOSFET WITH FAST Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 975 Stücke Lieferzeit 21-28 Tag (e) |
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SISA18BDN-T1-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET POWE Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8PT Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc) Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQJ476EP-T1_BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) 175C MOSFE Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIC476ED-T1-GE3 |
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Vishay Siliconix |
Description: IC REG BUCK 12A PPPAK MLP55-27L Package / Case: PowerPAK® MLP55-27 Packaging: Tape & Reel (TR) Synchronous Rectifier: Yes Supplier Device Package: PowerPAK® MLP55-27 Topology: Buck Voltage - Input (Max): 55V Frequency - Switching: 100kHz ~ 2MHz Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 12A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Part Status: Active Voltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 4.5V Voltage - Output (Max): 24V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQJ476EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 23A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
.jpg "SIHFU310-GE3") |
SIHFU310-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHANNEL 400V Packaging: Tape & Reel (TR) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CHANNEL 400V Packaging: Cut Tape (CT) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SI2319DS-T1-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQ2389ES-T1_BE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 4.1A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRFR9120PBF-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 100V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQ7414CENW-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 18A PPAK1212-8W Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8W Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8W Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQJ560EP-T1_BE3 |
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Vishay Siliconix |
Description: N- AND P-CHANNEL 60-V (D-S) 175C FET Type: N and P-Channel Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc) Drain to Source Voltage (Vdss): 60V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQS660CENW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 7A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIDR5802EP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR578EP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) 175C MOSFE Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR610EP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 200 V (D-S) 175C MOSFE Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIDR5102EP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) 175C MOSFE Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHP4N80E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tape & Reel (TR) Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQJQ130EL-T1_GE3 |
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Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 445A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIC431DED-T1-GE3 |
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Vishay Siliconix |
Description: 4.5 - 24V,20A MICROBUCK ULTASONI Part Status: Active Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 3V Voltage - Output (Max): 21.6V Synchronous Rectifier: Yes Supplier Device Package: PowerPAK® MLP44-24 Topology: Buck Voltage - Input (Max): 24V Frequency - Switching: 300kHz ~ 1MHz Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 24A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 24-PowerWFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: 4.5 - 24V,20A MICROBUCK ULTASONI Part Status: Active Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 3V Voltage - Output (Max): 21.6V Synchronous Rectifier: Yes Supplier Device Package: PowerPAK® MLP44-24 Topology: Buck Voltage - Input (Max): 24V Frequency - Switching: 300kHz ~ 1MHz Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 24A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 24-PowerWFQFN Packaging: Cut Tape (CT) |
auf Bestellung 30 Stücke Lieferzeit 21-28 Tag (e) |
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SIC438DED-T1-GE3 |
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Vishay Siliconix |
Description: 4.5 - 28V,8A MICROBUCK ULTRASONI Part Status: Active Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 3V Voltage - Output (Max): 25.2V Synchronous Rectifier: Yes Supplier Device Package: PowerPAK® MLP44-24 Topology: Buck Voltage - Input (Max): 28V Frequency - Switching: 300kHz ~ 1MHz Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 8A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 24-PowerWFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIC438CED-T1-GE3 |
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Vishay Siliconix |
Description: 4.5 - 28V,8A MICROBUCK ULTRASONI Supplier Device Package: PowerPAK® MLP44-24 Topology: Buck Voltage - Input (Max): 28V Frequency - Switching: 300kHz ~ 1MHz Output Configuration: Positive Operating Temperature: -40°C ~ 105°C (TA) Current - Output: 8A Part Status: Active Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Min): 3V Voltage - Output (Max): 25.2V Synchronous Rectifier: Yes Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 24-PowerWFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| SI4116DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 18A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 18A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
auf Bestellung 135008 Stücke - Preis und Lieferfrist anzeigen
| SI4116DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 18A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
auf Bestellung 8 Stücke Description: MOSFET N-CH 25V 18A 8SO
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 135000 Stücke - Preis und Lieferfrist anzeigen
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| SI2312BDS-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| SQJ488EP-T2_GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
| SIHF9Z34STRL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHANNEL 60V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| SIHA21N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| SIHA21N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| IRFR220TRPBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 200V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 200V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| IRFR220PBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 200V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 200V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
| SIHA18N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Vgs (Max): ±30V
| SIHP12N50E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| SI2305CDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 8-V (D-S) MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 5.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 8-V (D-S) MOSFET
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 5.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
| SI2304BDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
| SI2307BDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 30-V (D-S) MOSFET
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
| SIHA12N50E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1000 Stücke Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| SIHA12N50E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1000 Stücke Description: N-CHANNEL 500V
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| SIHP14N60E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| SIHP25N60EFL-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| SIHP065N60E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Lieferzeit 21-28 Tag (e)
|
| SI2392ADS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
| IRFRC20PBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
| SIHP25N50E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| SIHP35N60E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
| IRLR110TRPBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 5V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| SQW33N65EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 109mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3972 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: E SERIES POWER MOSFET WITH FAST
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 109mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3972 pF @ 100 V
| SIHP23N60E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
|
| SIHP7N60E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Lieferzeit 21-28 Tag (e)
|
| SIHP6N40D-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 400V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 1000 Stücke Description: N-CHANNEL 400V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Lieferzeit 21-28 Tag (e)
|
| SIHK185N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| SIHK185N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 50 Stücke Description: E SERIES POWER MOSFET POWERPAK 1
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Part Status: Active
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
|
| SIHK055N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: E SERIES POWER MOSFET WITH FAST
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| SIHK055N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 50 Stücke Description: E SERIES POWER MOSFET WITH FAST
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3667 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
|
| SIHK075N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2954 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: E SERIES POWER MOSFET WITH FAST
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2954 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| SIHK075N60EF-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 2954 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 50 Stücke Description: E SERIES POWER MOSFET WITH FAST
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 192W (Tc)
Rds On (Max) @ Id, Vgs: 71mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 2954 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
|
| SIP32434BDN-T1E4 |
|
Hersteller: Vishay Siliconix
Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Supplier Device Package: 10-DFN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.8V ~ 23V
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Number of Outputs: 1
Features: Auto Restart, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 10-VFDFN Exposed Pad
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
auf Bestellung 40 Stücke Description: 6 A, 33 M, 2.8 V TO 23 V,EFUSE W
Supplier Device Package: 10-DFN (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 6A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.8V ~ 23V
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Number of Outputs: 1
Features: Auto Restart, Power Good, Slew Rate Controlled
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 10-VFDFN Exposed Pad
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
Lieferzeit 21-28 Tag (e)
|
| SIP32434AEVB |
Hersteller: Vishay Siliconix
Description: SIP32434A EVAL BOARD
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SIP32434A EVAL BOARD
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
| SIP32434BEVB |
Hersteller: Vishay Siliconix
Description: SIP32434B EVAL BOARD
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: SIP32434B EVAL BOARD
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
| SIHP35N60E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
| SIHA25N60EFL-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±30V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±30V
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| SIHP22N60AE-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 1000 Stücke Description: N-CHANNEL 600V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
|
| SQJB68EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
| SI2318CDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
| SI2318DS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
| SI2333DDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Vgs(th) (Max) @ Id: 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 12-V (D-S) MOSFET
Vgs(th) (Max) @ Id: 1V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| SIHB30N60ET1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 782 Stücke - Preis und Lieferfrist anzeigen
| SIHB30N60ET1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 782 Stücke Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
| SIHB30N60ET5-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
| SIP32408EVB |
|
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIP32408
Supplied Contents: Board(s)
Utilized IC / Part: SIP32408
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: EVAL BOARD FOR SIP32408
Supplied Contents: Board(s)
Utilized IC / Part: SIP32408
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
Part Status: Active
| SIZ240DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 40V POWERPAIR 3
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET DUAL N-CH 40V POWERPAIR 3
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
| SIHP11N80E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 990 Stücke Description: N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
|
| SIHA11N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 8A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 22 Stücke Description: MOSFET N-CH 800V 8A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 2040 Stücke - Preis und Lieferfrist anzeigen
|
| SIHP21N80AEF-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
auf Bestellung 1025 Stücke Description: E SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
|
| SIHA21N80AEF-GE3 |
|
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 975 Stücke Description: EF SERIES POWER MOSFET WITH FAST
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1511 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Lieferzeit 21-28 Tag (e)
|
| SISA18BDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8PT
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30 V (D-S) MOSFET POWE
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8PT
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.83mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
| SQJ476EP-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100-V (D-S) 175C MOSFE
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Packaging: Tape & Reel (TR)
| SIC476ED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC REG BUCK 12A PPPAK MLP55-27L
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG BUCK 12A PPPAK MLP55-27L
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
| SQJ476EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 23A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
| SIHFU310-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 3000 Stücke Description: MOSFET N-CHANNEL 400V
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| SIHFU310-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 400V
Packaging: Cut Tape (CT)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 3000 Stücke Description: MOSFET N-CHANNEL 400V
Packaging: Cut Tape (CT)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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| SI2319DS-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
| SQ2389ES-T1_BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 4.1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
| IRFR9120PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: P-CHANNEL 100V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 100V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
| SQ7414CENW-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 18A PPAK1212-8W
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 18A PPAK1212-8W
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8W
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
| SQJ560EP-T1_BE3 |
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Hersteller: Vishay Siliconix
Description: N- AND P-CHANNEL 60-V (D-S) 175C
FET Type: N and P-Channel
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N- AND P-CHANNEL 60-V (D-S) 175C
FET Type: N and P-Channel
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 45nC @ 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, 52.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 18A (Tc)
Drain to Source Voltage (Vdss): 60V
| SQS660CENW-T1_GE3 |
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
| SIDR5802EP-T1-RE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 80 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34.2A (Ta), 153A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| SIDR578EP-T1-RE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) 175C MOSFE
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 150 V (D-S) 175C MOSFE
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
| SIDR610EP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: N-CHANNEL 200 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 200 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| SIDR5102EP-T1-RE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28.2A (Ta), 126A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| SIHP4N80E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
| SQJQ130EL-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 445A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 445A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
| SIC431DED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: 4.5 - 24V,20A MICROBUCK ULTASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: 4.5 - 24V,20A MICROBUCK ULTASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
| SIC431DED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: 4.5 - 24V,20A MICROBUCK ULTASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
auf Bestellung 30 Stücke Description: 4.5 - 24V,20A MICROBUCK ULTASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
| SIC438DED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: 4.5 - 28V,8A MICROBUCK ULTRASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: 4.5 - 28V,8A MICROBUCK ULTRASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
| SIC438CED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: 4.5 - 28V,8A MICROBUCK ULTRASONI
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: 4.5 - 28V,8A MICROBUCK ULTRASONI
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
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