Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10951) > Seite 116 nach 183

Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 90 108 111 112 113 114 115 116 117 118 119 120 121 126 144 162 180 183  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SI1902CDL-T1-GE3 SI1902CDL-T1-GE3 Vishay Siliconix si1902cdl.pdf Description: MOSFET 2N-CH 20V 1.1A SC-70-6
auf Bestellung 9513 Stücke:
Lieferzeit 21-28 Tag (e)
SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 Vishay Siliconix si2301bds.pdf Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
auf Bestellung 21932 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SI2303CDS-T1-E3 SI2303CDS-T1-E3 Vishay Siliconix si2303cd.pdf Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 9142 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SI2329DS-T1-GE3 SI2329DS-T1-GE3 Vishay Siliconix si2329ds.pdf Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
auf Bestellung 1280 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 19
SI2342DS-T1-GE3 SI2342DS-T1-GE3 Vishay Siliconix si2342ds.pdf Description: MOSFET N-CH 8V 6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V
Produkt ist nicht verfügbar
SI2347DS-T1-GE3 SI2347DS-T1-GE3 Vishay Siliconix si2347ds.pdf Description: MOSFET P-CH 30V 5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V
auf Bestellung 221839 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
38+ 0.7 EUR
100+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 27
Si3407DV-T1-GE3 Si3407DV-T1-GE3 Vishay Siliconix si3407dv.pdf Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
auf Bestellung 9876 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SI3473CDV-T1-E3 SI3473CDV-T1-E3 Vishay Siliconix si3473cd.pdf Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
auf Bestellung 5544 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
Mindestbestellmenge: 14
SI3585CDV-T1-GE3 SI3585CDV-T1-GE3 Vishay Siliconix si3585cd.pdf Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 11515 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 Vishay Siliconix si4403cd.pdf Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
auf Bestellung 18003 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.82 EUR
17+ 1.58 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
SI4455DY-T1-GE3 SI4455DY-T1-GE3 Vishay Siliconix si4455dy.pdf Description: MOSFET P-CH 150V 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 5.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 32116 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.74 EUR
10+ 3.07 EUR
100+ 2.39 EUR
500+ 2.02 EUR
1000+ 1.65 EUR
Mindestbestellmenge: 7
SI4866BDY-T1-E3 SI4866BDY-T1-E3 Vishay Siliconix si4866bd.pdf Description: MOSFET N-CH 12V 21.5A 8-SOIC
auf Bestellung 2480 Stücke:
Lieferzeit 21-28 Tag (e)
SI5457DC-T1-GE3 SI5457DC-T1-GE3 Vishay Siliconix si5457dc.pdf Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 28298 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.33 EUR
23+ 1.13 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
SI5504BDC-T1-E3 SI5504BDC-T1-E3 Vishay Siliconix si5504bdc.pdf Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 13757 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.34 EUR
14+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
SI7115DN-T1-E3 SI7115DN-T1-E3 Vishay Siliconix si7115dn.pdf Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 9116 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.81 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
SI7149DP-T1-GE3 SI7149DP-T1-GE3 Vishay Siliconix si7149dp.pdf Description: MOSFET P-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V
auf Bestellung 25917 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.64 EUR
10+ 3.03 EUR
100+ 2.41 EUR
500+ 2.04 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 8
SI7463ADP-T1-GE3 SI7463ADP-T1-GE3 Vishay Siliconix si7463adp.pdf Description: MOSFET P-CH 40V 46A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V
Produkt ist nicht verfügbar
SI7852DP-T1-GE3 SI7852DP-T1-GE3 Vishay Siliconix si7852dp.pdf Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
auf Bestellung 1824 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.81 EUR
10+ 5.72 EUR
100+ 4.63 EUR
500+ 4.11 EUR
1000+ 3.52 EUR
Mindestbestellmenge: 4
SI8472DB-T2-E1 SI8472DB-T2-E1 Vishay Siliconix si8472db.pdf Description: MOSFET N-CH 20V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 12928 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.3 EUR
24+ 1.11 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 20
SI9926CDY-T1-E3 SI9926CDY-T1-E3 Vishay Siliconix si9926cd.pdf Description: MOSFET 2N-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7182 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SIA400EDJ-T1-GE3 SIA400EDJ-T1-GE3 Vishay Siliconix sia400edj.pdf Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
auf Bestellung 151951 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 Vishay Siliconix sia427adj.pdf Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 17320 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.08 EUR
100+ 0.75 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SIA447DJ-T1-GE3 SIA447DJ-T1-GE3 Vishay Siliconix sia447dj.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
auf Bestellung 89712 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
28+ 0.96 EUR
100+ 0.66 EUR
500+ 0.52 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 24
SIR172DP-T1-GE3 SIR172DP-T1-GE3 Vishay Siliconix sir172dp.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Produkt ist nicht verfügbar
SIR418DP-T1-GE3 SIR418DP-T1-GE3 Vishay Siliconix sir418dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 22610 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.12 EUR
11+ 2.55 EUR
100+ 1.99 EUR
500+ 1.68 EUR
1000+ 1.37 EUR
Mindestbestellmenge: 9
DG9408DN-T1-E4 DG9408DN-T1-E4 Vishay Siliconix 71870.pdf Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 2343 Stücke:
Lieferzeit 21-28 Tag (e)
SI1414DH-T1-GE3 SI1414DH-T1-GE3 Vishay Siliconix si1414dh.pdf Description: MOSFET N-CH 30V 4A SOT-363
auf Bestellung 2108 Stücke:
Lieferzeit 21-28 Tag (e)
SI1489EDH-T1-GE3 SI1489EDH-T1-GE3 Vishay Siliconix si1489ed.pdf Description: MOSFET P-CH 8V 2A SOT-363
auf Bestellung 2792 Stücke:
Lieferzeit 21-28 Tag (e)
SI4866BDY-T1-E3 SI4866BDY-T1-E3 Vishay Siliconix si4866bd.pdf Description: MOSFET N-CH 12V 21.5A 8-SOIC
auf Bestellung 2480 Stücke:
Lieferzeit 21-28 Tag (e)
SIC521ACD-T1-GE3 SIC521ACD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.64 EUR
6000+ 2.54 EUR
Mindestbestellmenge: 3000
SIC521CD-T1-GE3 SIC521CD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SIC530CD-T1-GE3 SIC530CD-T1-GE3 Vishay Siliconix sic530.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.8 EUR
6000+ 2.69 EUR
Mindestbestellmenge: 3000
SIC531ACD-T1-GE3 SIC531ACD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
SiC531CD-T1-GE3 SiC531CD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SiC532CD-T1-GE3 SiC532CD-T1-GE3 Vishay Siliconix sic532.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SIC620ARCD-T1-GE3 SIC620ARCD-T1-GE3 Vishay Siliconix sic620r.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
SiC631CD-T1-GE3 SiC631CD-T1-GE3 Vishay Siliconix sic631.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+3.01 EUR
6000+ 2.9 EUR
Mindestbestellmenge: 3000
SIC632ACD-T1-GE3 SIC632ACD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SiC632CD-T1-GE3 SiC632CD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.69 EUR
Mindestbestellmenge: 3000
SIC521ACD-T1-GE3 SIC521ACD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
SIC521CD-T1-GE3 SIC521CD-T1-GE3 Vishay Siliconix sic521a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 1011 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.75 EUR
10+ 5.18 EUR
25+ 4.88 EUR
100+ 4.16 EUR
250+ 3.91 EUR
500+ 3.42 EUR
1000+ 2.83 EUR
Mindestbestellmenge: 5
SIC530CD-T1-GE3 SIC530CD-T1-GE3 Vishay Siliconix sic530.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 14166 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.11 EUR
10+ 5.49 EUR
25+ 5.18 EUR
100+ 4.41 EUR
250+ 4.14 EUR
500+ 3.63 EUR
1000+ 3 EUR
Mindestbestellmenge: 5
SIC531ACD-T1-GE3 SIC531ACD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
SiC531CD-T1-GE3 SiC531CD-T1-GE3 Vishay Siliconix sic531a.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 499 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.62 EUR
10+ 5.05 EUR
25+ 4.77 EUR
100+ 4.06 EUR
250+ 3.81 EUR
Mindestbestellmenge: 5
SiC532CD-T1-GE3 SiC532CD-T1-GE3 Vishay Siliconix sic532.pdf Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 2967 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.11 EUR
10+ 5.49 EUR
25+ 5.18 EUR
100+ 4.41 EUR
250+ 4.14 EUR
500+ 3.63 EUR
1000+ 3 EUR
Mindestbestellmenge: 5
SIC620ARCD-T1-GE3 SIC620ARCD-T1-GE3 Vishay Siliconix sic620r.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 17 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.76 EUR
10+ 7.86 EUR
Mindestbestellmenge: 3
SiC631CD-T1-GE3 SiC631CD-T1-GE3 Vishay Siliconix sic631.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 17394 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.58 EUR
10+ 5.91 EUR
25+ 5.58 EUR
100+ 4.75 EUR
250+ 4.46 EUR
500+ 3.9 EUR
1000+ 3.23 EUR
Mindestbestellmenge: 4
SIC632ACD-T1-GE3 SIC632ACD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 758 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
10+ 5.76 EUR
25+ 5.44 EUR
100+ 4.63 EUR
250+ 4.35 EUR
500+ 3.81 EUR
Mindestbestellmenge: 5
SiC632CD-T1-GE3 SiC632CD-T1-GE3 Vishay Siliconix sic632a.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 13550 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.52 EUR
10+ 4.05 EUR
25+ 3.82 EUR
100+ 3.26 EUR
250+ 3.06 EUR
500+ 2.69 EUR
Mindestbestellmenge: 6
SiC770CD-T1-GE3 SiC770CD-T1-GE3 Vishay Siliconix Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
DG3535DB-T1-E1 Vishay Siliconix Description: IC SW SPDTX2 400MOHM 10MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
Supplier Device Package: 10-Micro Foot® (2x1.5)
Voltage - Supply, Single (V+): 2.7V ~ 3.3V
Charge Injection: 21pC
Crosstalk: -69dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 82ns, 73ns
Channel Capacitance (CS(off), CD(off)): 145pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Vishay Siliconix sihh11n60ef.pdf Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Produkt ist nicht verfügbar
SiHH14N60EF-T1-GE3 SiHH14N60EF-T1-GE3 Vishay Siliconix sihh14n60ef.pdf Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Produkt ist nicht verfügbar
SiHH14N65E-T1-GE3 SiHH14N65E-T1-GE3 Vishay Siliconix sihh14n65e.pdf Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Produkt ist nicht verfügbar
SiHH21N65E-T1-GE3 SiHH21N65E-T1-GE3 Vishay Siliconix sihh21n65e.pdf Description: MOSFET N-CH 650V 20.3A PPAK 8X8
Produkt ist nicht verfügbar
SiHG33N65E-GE3 SiHG33N65E-GE3 Vishay Siliconix sihg33n65e.pdf Description: MOSFET N-CH 650V 32.4A TO247AC
auf Bestellung 843 Stücke:
Lieferzeit 21-28 Tag (e)
SiHH11N60EF-T1-GE3 SiHH11N60EF-T1-GE3 Vishay Siliconix sihh11n60ef.pdf Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 1825 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.18 EUR
10+ 7.7 EUR
100+ 6.23 EUR
500+ 5.54 EUR
1000+ 4.74 EUR
Mindestbestellmenge: 3
SiHH14N60EF-T1-GE3 SiHH14N60EF-T1-GE3 Vishay Siliconix sihh14n60ef.pdf Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Produkt ist nicht verfügbar
SiHH14N65E-T1-GE3 SiHH14N65E-T1-GE3 Vishay Siliconix sihh14n65e.pdf Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Produkt ist nicht verfügbar
SiHH21N65E-T1-GE3 SiHH21N65E-T1-GE3 Vishay Siliconix sihh21n65e.pdf Description: MOSFET N-CH 650V 20.3A PPAK 8X8
Produkt ist nicht verfügbar
SI1902CDL-T1-GE3 si1902cdl.pdf
SI1902CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.1A SC-70-6
auf Bestellung 9513 Stücke:
Lieferzeit 21-28 Tag (e)
SI2301BDS-T1-GE3 si2301bds.pdf
SI2301BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
auf Bestellung 21932 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SI2303CDS-T1-E3 si2303cd.pdf
SI2303CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 9142 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SI2329DS-T1-GE3 si2329ds.pdf
SI2329DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
auf Bestellung 1280 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.68 EUR
1000+ 0.58 EUR
Mindestbestellmenge: 19
SI2342DS-T1-GE3 si2342ds.pdf
SI2342DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 4 V
Produkt ist nicht verfügbar
SI2347DS-T1-GE3 si2347ds.pdf
SI2347DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V
auf Bestellung 221839 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
38+ 0.7 EUR
100+ 0.35 EUR
500+ 0.31 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 27
Si3407DV-T1-GE3 si3407dv.pdf
Si3407DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
auf Bestellung 9876 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SI3473CDV-T1-E3 si3473cd.pdf
SI3473CDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V
auf Bestellung 5544 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.87 EUR
16+ 1.64 EUR
100+ 1.26 EUR
500+ 0.99 EUR
1000+ 0.79 EUR
Mindestbestellmenge: 14
SI3585CDV-T1-GE3 si3585cd.pdf
SI3585CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W, 1.3W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 11515 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SI4403CDY-T1-GE3 si4403cd.pdf
SI4403CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
auf Bestellung 18003 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.82 EUR
17+ 1.58 EUR
100+ 1.09 EUR
500+ 0.91 EUR
1000+ 0.78 EUR
Mindestbestellmenge: 15
SI4455DY-T1-GE3 si4455dy.pdf
SI4455DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 5.9W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 32116 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.74 EUR
10+ 3.07 EUR
100+ 2.39 EUR
500+ 2.02 EUR
1000+ 1.65 EUR
Mindestbestellmenge: 7
SI4866BDY-T1-E3 si4866bd.pdf
SI4866BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
auf Bestellung 2480 Stücke:
Lieferzeit 21-28 Tag (e)
SI5457DC-T1-GE3 si5457dc.pdf
SI5457DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 28298 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.33 EUR
23+ 1.13 EUR
100+ 0.79 EUR
500+ 0.62 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 20
SI5504BDC-T1-E3 si5504bdc.pdf
SI5504BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A/3.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.12W, 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 13757 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.34 EUR
14+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
SI7115DN-T1-E3 si7115dn.pdf
SI7115DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 295mOhm @ 4A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 9116 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.81 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
SI7149DP-T1-GE3 si7149dp.pdf
SI7149DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V
auf Bestellung 25917 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.64 EUR
10+ 3.03 EUR
100+ 2.41 EUR
500+ 2.04 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 8
SI7463ADP-T1-GE3 si7463adp.pdf
SI7463ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 46A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 20 V
Produkt ist nicht verfügbar
SI7852DP-T1-GE3 si7852dp.pdf
SI7852DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
auf Bestellung 1824 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.81 EUR
10+ 5.72 EUR
100+ 4.63 EUR
500+ 4.11 EUR
1000+ 3.52 EUR
Mindestbestellmenge: 4
SI8472DB-T2-E1 si8472db.pdf
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
auf Bestellung 12928 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.3 EUR
24+ 1.11 EUR
100+ 0.77 EUR
500+ 0.6 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 20
SI9926CDY-T1-E3 si9926cd.pdf
SI9926CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7182 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SIA400EDJ-T1-GE3 sia400edj.pdf
SIA400EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
auf Bestellung 151951 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIA427ADJ-T1-GE3 sia427adj.pdf
SIA427ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 17320 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.08 EUR
100+ 0.75 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SIA447DJ-T1-GE3 sia447dj.pdf
SIA447DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 6 V
auf Bestellung 89712 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
28+ 0.96 EUR
100+ 0.66 EUR
500+ 0.52 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 24
SIR172DP-T1-GE3 sir172dp.pdf
SIR172DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Produkt ist nicht verfügbar
SIR418DP-T1-GE3 sir418dp.pdf
SIR418DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 22610 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.12 EUR
11+ 2.55 EUR
100+ 1.99 EUR
500+ 1.68 EUR
1000+ 1.37 EUR
Mindestbestellmenge: 9
DG9408DN-T1-E4 71870.pdf
DG9408DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 2343 Stücke:
Lieferzeit 21-28 Tag (e)
SI1414DH-T1-GE3 si1414dh.pdf
SI1414DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4A SOT-363
auf Bestellung 2108 Stücke:
Lieferzeit 21-28 Tag (e)
SI1489EDH-T1-GE3 si1489ed.pdf
SI1489EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 2A SOT-363
auf Bestellung 2792 Stücke:
Lieferzeit 21-28 Tag (e)
SI4866BDY-T1-E3 si4866bd.pdf
SI4866BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
auf Bestellung 2480 Stücke:
Lieferzeit 21-28 Tag (e)
SIC521ACD-T1-GE3 sic521a.pdf
SIC521ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.64 EUR
6000+ 2.54 EUR
Mindestbestellmenge: 3000
SIC521CD-T1-GE3 sic521a.pdf
SIC521CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SIC530CD-T1-GE3 sic530.pdf
SIC530CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.8 EUR
6000+ 2.69 EUR
Mindestbestellmenge: 3000
SIC531ACD-T1-GE3 sic531a.pdf
SIC531ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
SiC531CD-T1-GE3 sic531a.pdf
SiC531CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SiC532CD-T1-GE3 sic532.pdf
SiC532CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SIC620ARCD-T1-GE3 sic620r.pdf
SIC620ARCD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
SiC631CD-T1-GE3 sic631.pdf
SiC631CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.01 EUR
6000+ 2.9 EUR
Mindestbestellmenge: 3000
SIC632ACD-T1-GE3 sic632a.pdf
SIC632ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
SiC632CD-T1-GE3 sic632a.pdf
SiC632CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.69 EUR
Mindestbestellmenge: 3000
SIC521ACD-T1-GE3 sic521a.pdf
SIC521ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
SIC521CD-T1-GE3 sic521a.pdf
SIC521CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 1011 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.75 EUR
10+ 5.18 EUR
25+ 4.88 EUR
100+ 4.16 EUR
250+ 3.91 EUR
500+ 3.42 EUR
1000+ 2.83 EUR
Mindestbestellmenge: 5
SIC530CD-T1-GE3 sic530.pdf
SIC530CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 40A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 20V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 14166 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.11 EUR
10+ 5.49 EUR
25+ 5.18 EUR
100+ 4.41 EUR
250+ 4.14 EUR
500+ 3.63 EUR
1000+ 3 EUR
Mindestbestellmenge: 5
SIC531ACD-T1-GE3 sic531a.pdf
SIC531ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
SiC531CD-T1-GE3 sic531a.pdf
SiC531CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 499 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.62 EUR
10+ 5.05 EUR
25+ 4.77 EUR
100+ 4.06 EUR
250+ 3.81 EUR
Mindestbestellmenge: 5
SiC532CD-T1-GE3 sic532.pdf
SiC532CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRV 30A PPAK MLP4
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP4535-22L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Current - Peak Output: 35A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP4535-22L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 2967 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.11 EUR
10+ 5.49 EUR
25+ 5.18 EUR
100+ 4.41 EUR
250+ 4.14 EUR
500+ 3.63 EUR
1000+ 3 EUR
Mindestbestellmenge: 5
SIC620ARCD-T1-GE3 sic620r.pdf
SIC620ARCD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 17 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.76 EUR
10+ 7.86 EUR
Mindestbestellmenge: 3
SiC631CD-T1-GE3 sic631.pdf
SiC631CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Current - Peak Output: 55A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
auf Bestellung 17394 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.58 EUR
10+ 5.91 EUR
25+ 5.58 EUR
100+ 4.75 EUR
250+ 4.46 EUR
500+ 3.9 EUR
1000+ 3.23 EUR
Mindestbestellmenge: 4
SIC632ACD-T1-GE3 sic632a.pdf
SIC632ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 758 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
10+ 5.76 EUR
25+ 5.44 EUR
100+ 4.63 EUR
250+ 4.35 EUR
500+ 3.81 EUR
Mindestbestellmenge: 5
SiC632CD-T1-GE3 sic632a.pdf
SiC632CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 13550 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.52 EUR
10+ 4.05 EUR
25+ 3.82 EUR
100+ 3.26 EUR
250+ 3.06 EUR
500+ 2.69 EUR
Mindestbestellmenge: 6
SiC770CD-T1-GE3
SiC770CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Produkt ist nicht verfügbar
DG3535DB-T1-E1
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 400MOHM 10MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 400mOhm
Supplier Device Package: 10-Micro Foot® (2x1.5)
Voltage - Supply, Single (V+): 2.7V ~ 3.3V
Charge Injection: 21pC
Crosstalk: -69dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Switch Time (Ton, Toff) (Max): 82ns, 73ns
Channel Capacitance (CS(off), CD(off)): 145pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
SiHH11N60EF-T1-GE3 sihh11n60ef.pdf
SiHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Produkt ist nicht verfügbar
SiHH14N60EF-T1-GE3 sihh14n60ef.pdf
SiHH14N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Produkt ist nicht verfügbar
SiHH14N65E-T1-GE3 sihh14n65e.pdf
SiHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Produkt ist nicht verfügbar
SiHH21N65E-T1-GE3 sihh21n65e.pdf
SiHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PPAK 8X8
Produkt ist nicht verfügbar
SiHG33N65E-GE3 sihg33n65e.pdf
SiHG33N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 32.4A TO247AC
auf Bestellung 843 Stücke:
Lieferzeit 21-28 Tag (e)
SiHH11N60EF-T1-GE3 sihh11n60ef.pdf
SiHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
auf Bestellung 1825 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.18 EUR
10+ 7.7 EUR
100+ 6.23 EUR
500+ 5.54 EUR
1000+ 4.74 EUR
Mindestbestellmenge: 3
SiHH14N60EF-T1-GE3 sihh14n60ef.pdf
SiHH14N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Produkt ist nicht verfügbar
SiHH14N65E-T1-GE3 sihh14n65e.pdf
SiHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Produkt ist nicht verfügbar
SiHH21N65E-T1-GE3 sihh21n65e.pdf
SiHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PPAK 8X8
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 90 108 111 112 113 114 115 116 117 118 119 120 121 126 144 162 180 183  [ Nächste Seite >> ]