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SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 Vishay Siliconix sq2361es.pdf Description: MOSFET P-CH 60V 2.8A SSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 63122 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
21+ 1.26 EUR
100+ 0.87 EUR
Mindestbestellmenge: 19
SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 Vishay Siliconix sq2362es.pdf Description: MOSFET N-CH 60V 4.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Produkt ist nicht verfügbar
SQ3427AEEV-T1_GE3 SQ3427AEEV-T1_GE3 Vishay Siliconix sq3427aeev.pdf Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27995 Stücke:
Lieferzeit 21-28 Tag (e)
15+1.79 EUR
17+ 1.56 EUR
100+ 1.08 EUR
500+ 0.9 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 15
SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 Vishay Siliconix sq4850ey.pdf Description: MOSFET N-CH 60V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 23781 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.15 EUR
11+ 2.57 EUR
100+ 2 EUR
500+ 1.69 EUR
1000+ 1.38 EUR
Mindestbestellmenge: 9
SQA410EJ-T1_GE3 SQA410EJ-T1_GE3 Vishay Siliconix sqa410ej.pdf Description: MOSFET N-CH 20V 7.8A SC70-6
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
18+ 1.5 EUR
100+ 1.14 EUR
Mindestbestellmenge: 16
SQD19P06-60L_GE3 SQD19P06-60L_GE3 Vishay Siliconix sqd19p06.pdf Description: MOSFET P-CH 60V 20A TO252
Produkt ist nicht verfügbar
SQD25N15-52_GE3 SQD25N15-52_GE3 Vishay Siliconix sqd25n15-52.pdf Description: MOSFET N-CH 150V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5814 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.79 EUR
10+ 7.38 EUR
100+ 5.97 EUR
500+ 5.31 EUR
1000+ 4.55 EUR
Mindestbestellmenge: 3
SQD45P03-12_GE3 SQD45P03-12_GE3 Vishay Siliconix sqd45p03.pdf Description: MOSFET P-CH 30V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
auf Bestellung 16284 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.6 EUR
10+ 4.14 EUR
100+ 3.33 EUR
500+ 2.73 EUR
1000+ 2.26 EUR
Mindestbestellmenge: 6
SQJ422EP-T1_GE3 SQJ422EP-T1_GE3 Vishay Siliconix sqj422ep.pdf Description: MOSFET N-CH 40V 74A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4848 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.85 EUR
10+ 3.2 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 7
SQJ912AEP-T1_GE3 SQJ912AEP-T1_GE3 Vishay Siliconix sqj912aep.pdf Description: MOSFET 2N-CH 40V 30A PPAK SO-8
auf Bestellung 5369 Stücke:
Lieferzeit 21-28 Tag (e)
SQJ940EP-T1_GE3 SQJ940EP-T1_GE3 Vishay Siliconix sqj940ep.pdf Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
SQM120N06-3m5L_GE3 SQM120N06-3m5L_GE3 Vishay Siliconix sqm120n06-3m5l.pdf Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1481 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.85 EUR
10+ 8.27 EUR
100+ 6.69 EUR
Mindestbestellmenge: 3
SQM120P04-04L_GE3 SQM120P04-04L_GE3 Vishay Siliconix sqm120p0.pdf Description: MOSFET P-CH 40V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.61 EUR
10+ 7.23 EUR
100+ 5.85 EUR
Mindestbestellmenge: 4
SQS462EN-T1_GE3 SQS462EN-T1_GE3 Vishay Siliconix sqs462en.pdf Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2893 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.37 EUR
14+ 1.94 EUR
100+ 1.51 EUR
500+ 1.28 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 11
SQS484EN-T1_GE3 SQS484EN-T1_GE3 Vishay Siliconix sqs484en.pdf Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
auf Bestellung 14249 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.63 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.51 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 10
SUD35N10-26P-E3 SUD35N10-26P-E3 Vishay Siliconix sud35n10-26p.pdf Description: MOSFET N-CH 100V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 308 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.97 EUR
10+ 4.13 EUR
100+ 3.29 EUR
Mindestbestellmenge: 6
SUP85N10-10-GE3 SUP85N10-10-GE3 Vishay Siliconix SUP%2CSUB85N10-10.pdf Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
auf Bestellung 504 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.29 EUR
50+ 12.12 EUR
100+ 10.39 EUR
500+ 9.23 EUR
Mindestbestellmenge: 2
TN2404K-T1-GE3 TN2404K-T1-GE3 Vishay Siliconix tn2404k.pdf Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 7850 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SIRA20DP-T1-RE3 SIRA20DP-T1-RE3 Vishay Siliconix sira20dp.pdf Description: MOSFET N-CH 25V 81.7A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.63 EUR
Mindestbestellmenge: 3000
SQJQ480E-T1_GE3 SQJQ480E-T1_GE3 Vishay Siliconix sqjq480e.pdf Description: MOSFET N-CH 80V 150A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8625 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+3.95 EUR
Mindestbestellmenge: 2000
SIRA20DP-T1-RE3 SIRA20DP-T1-RE3 Vishay Siliconix sira20dp.pdf Description: MOSFET N-CH 25V 81.7A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
auf Bestellung 7207 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.95 EUR
10+ 3.23 EUR
100+ 2.51 EUR
500+ 2.13 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 7
SQJQ480E-T1_GE3 SQJQ480E-T1_GE3 Vishay Siliconix sqjq480e.pdf Description: MOSFET N-CH 80V 150A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8625 pF @ 25 V
auf Bestellung 5760 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.88 EUR
10+ 7.07 EUR
100+ 5.8 EUR
500+ 4.94 EUR
1000+ 4.16 EUR
Mindestbestellmenge: 4
SIHH28N60E-T1-GE3 SIHH28N60E-T1-GE3 Vishay Siliconix sihh28n60e.pdf Description: MOSFET N-CH 600V 29A PPAK 8 X 8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 14A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 100 V
Produkt ist nicht verfügbar
SiR696DP-T1-GE3 SiR696DP-T1-GE3 Vishay Siliconix sir696dp.pdf Description: MOSFET N-CH 125V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 125 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 75 V
Produkt ist nicht verfügbar
SIR606DP-T1-GE3 SIR606DP-T1-GE3 Vishay Siliconix sir606dp.pdf Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Power Dissipation (Max): 44.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Produkt ist nicht verfügbar
SIA468DJ-T1-GE3 SIA468DJ-T1-GE3 Vishay Siliconix sia468dj.pdf Description: MOSFET N-CH 30V 37.8A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V
Produkt ist nicht verfügbar
Si5948DU-T1-GE3 Si5948DU-T1-GE3 Vishay Siliconix si5948du.pdf Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
Mindestbestellmenge: 3000
SIRB40DP-T1-GE3 SIRB40DP-T1-GE3 Vishay Siliconix sirb40dp.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
Si7111EDN-T1-GE3 Si7111EDN-T1-GE3 Vishay Siliconix si7111edn.pdf Description: MOSFET P-CH 30V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
auf Bestellung 8950 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.56 EUR
6000+ 0.53 EUR
Mindestbestellmenge: 3000
SiA928DJ-T1-GE3 SiA928DJ-T1-GE3 Vishay Siliconix sia928dj.pdf Description: MOSFET 2N-CH 30V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIRA60DP-T1-GE3 SIRA60DP-T1-GE3 Vishay Siliconix sira60dp.pdf Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.42 EUR
Mindestbestellmenge: 3000
SI7615CDN-T1-GE3 SI7615CDN-T1-GE3 Vishay Siliconix si7615cdn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3 SiUD403ED-T1-GE3 Vishay Siliconix siud403ed.pdf Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.2 EUR
6000+ 0.19 EUR
Mindestbestellmenge: 3000
SiUD412ED-T1-GE3 SiUD412ED-T1-GE3 Vishay Siliconix siud412ed.pdf Description: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 117000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.18 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
SiRC16DP-T1-GE3 SiRC16DP-T1-GE3 Vishay Siliconix sirc16dp.pdf Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Produkt ist nicht verfügbar
SISB46DN-T1-GE3 SISB46DN-T1-GE3 Vishay Siliconix sisb46dn.pdf Description: MOSFET 2N-CH 40V POWERPAK 1212-8
Produkt ist nicht verfügbar
SiJ494DP-T1-GE3 SiJ494DP-T1-GE3 Vishay Siliconix sij494dp.pdf Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 75 V
Produkt ist nicht verfügbar
SIRA24DP-T1-GE3 SIRA24DP-T1-GE3 Vishay Siliconix sira24dp.pdf Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.83 EUR
6000+ 0.79 EUR
Mindestbestellmenge: 3000
SISA24DN-T1-GE3 SISA24DN-T1-GE3 Vishay Siliconix sisa24dn.pdf Description: MOSFET N-CH 25V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Produkt ist nicht verfügbar
SiSA96DN-T1-GE3 SiSA96DN-T1-GE3 Vishay Siliconix sisa96dn.pdf Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.34 EUR
6000+ 0.33 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3000
Si3493DDV-T1-GE3 Si3493DDV-T1-GE3 Vishay Siliconix si3493ddv.pdf Description: MOSFET P-CHANNEL 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Produkt ist nicht verfügbar
SiRA88DP-T1-GE3 SiRA88DP-T1-GE3 Vishay Siliconix sira88dp.pdf Description: MOSFET N-CH 30V 45.5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.45 EUR
Mindestbestellmenge: 3000
Si5448DU-T1-GE3 Si5448DU-T1-GE3 Vishay Siliconix si5448du.pdf Description: MOSFET N-CH 40V 25A PPAK
Produkt ist nicht verfügbar
SiR626DP-T1-RE3 SiR626DP-T1-RE3 Vishay Siliconix sir626dp.pdf Description: MOSFET N-CH 60V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.96 EUR
Mindestbestellmenge: 3000
SiR680DP-T1-RE3 SiR680DP-T1-RE3 Vishay Siliconix sir680dp.pdf Description: MOSFET N-CH 80V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.39 EUR
Mindestbestellmenge: 3000
SiR668DP-T1-RE3 SiR668DP-T1-RE3 Vishay Siliconix sir668dp.pdf Description: MOSFET N-CH 100V 95A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Produkt ist nicht verfügbar
SiR632DP-T1-RE3 SiR632DP-T1-RE3 Vishay Siliconix sir632dp.pdf Description: MOSFET N-CH 150V 29A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Power Dissipation (Max): 69.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V
Produkt ist nicht verfügbar
SiR692DP-T1-RE3 SiR692DP-T1-RE3 Vishay Siliconix sir692dp.pdf Description: MOSFET N-CH 250V 24.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.2A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 125 V
Produkt ist nicht verfügbar
SiR696DP-T1-GE3 SiR696DP-T1-GE3 Vishay Siliconix sir696dp.pdf Description: MOSFET N-CH 125V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 125 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 75 V
Produkt ist nicht verfügbar
SIR606DP-T1-GE3 SIR606DP-T1-GE3 Vishay Siliconix sir606dp.pdf Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Power Dissipation (Max): 44.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
auf Bestellung 2563 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
10+ 2.89 EUR
100+ 2.25 EUR
500+ 1.91 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 8
SIA468DJ-T1-GE3 SIA468DJ-T1-GE3 Vishay Siliconix sia468dj.pdf Description: MOSFET N-CH 30V 37.8A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V
auf Bestellung 3023 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
18+ 1.48 EUR
100+ 1.1 EUR
500+ 0.87 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 16
Si5948DU-T1-GE3 Si5948DU-T1-GE3 Vishay Siliconix si5948du.pdf Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3239 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.78 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
SIRB40DP-T1-GE3 SIRB40DP-T1-GE3 Vishay Siliconix sirb40dp.pdf Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2287 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.64 EUR
10+ 3.26 EUR
100+ 2.54 EUR
500+ 2.1 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 8
Si7111EDN-T1-GE3 Si7111EDN-T1-GE3 Vishay Siliconix si7111edn.pdf Description: MOSFET P-CH 30V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
auf Bestellung 11331 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
SiA928DJ-T1-GE3 SiA928DJ-T1-GE3 Vishay Siliconix sia928dj.pdf Description: MOSFET 2N-CH 30V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIRA60DP-T1-GE3 SIRA60DP-T1-GE3 Vishay Siliconix sira60dp.pdf Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
auf Bestellung 4278 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.8 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 8
SI7615CDN-T1-GE3 SI7615CDN-T1-GE3 Vishay Siliconix si7615cdn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
SiUD403ED-T1-GE3 SiUD403ED-T1-GE3 Vishay Siliconix siud403ed.pdf Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 11633 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
42+ 0.63 EUR
100+ 0.32 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 30
SiUD412ED-T1-GE3 SiUD412ED-T1-GE3 Vishay Siliconix siud412ed.pdf Description: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 123931 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
31+ 0.84 EUR
100+ 0.42 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 22
SiRC16DP-T1-GE3 SiRC16DP-T1-GE3 Vishay Siliconix sirc16dp.pdf Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
auf Bestellung 762 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.91 EUR
11+ 2.39 EUR
100+ 1.86 EUR
500+ 1.57 EUR
Mindestbestellmenge: 9
SQ2361ES-T1_GE3 sq2361es.pdf
SQ2361ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 63122 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
21+ 1.26 EUR
100+ 0.87 EUR
Mindestbestellmenge: 19
SQ2362ES-T1_GE3 sq2362es.pdf
SQ2362ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Produkt ist nicht verfügbar
SQ3427AEEV-T1_GE3 sq3427aeev.pdf
SQ3427AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27995 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
15+1.79 EUR
17+ 1.56 EUR
100+ 1.08 EUR
500+ 0.9 EUR
1000+ 0.77 EUR
Mindestbestellmenge: 15
SQ4850EY-T1_GE3 sq4850ey.pdf
SQ4850EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 23781 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.15 EUR
11+ 2.57 EUR
100+ 2 EUR
500+ 1.69 EUR
1000+ 1.38 EUR
Mindestbestellmenge: 9
SQA410EJ-T1_GE3 sqa410ej.pdf
SQA410EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.8A SC70-6
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.5 EUR
100+ 1.14 EUR
Mindestbestellmenge: 16
SQD19P06-60L_GE3 sqd19p06.pdf
SQD19P06-60L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252
Produkt ist nicht verfügbar
SQD25N15-52_GE3 sqd25n15-52.pdf
SQD25N15-52_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5814 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.79 EUR
10+ 7.38 EUR
100+ 5.97 EUR
500+ 5.31 EUR
1000+ 4.55 EUR
Mindestbestellmenge: 3
SQD45P03-12_GE3 sqd45p03.pdf
SQD45P03-12_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
auf Bestellung 16284 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
10+ 4.14 EUR
100+ 3.33 EUR
500+ 2.73 EUR
1000+ 2.26 EUR
Mindestbestellmenge: 6
SQJ422EP-T1_GE3 sqj422ep.pdf
SQJ422EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 74A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4848 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.2 EUR
100+ 2.55 EUR
500+ 2.16 EUR
1000+ 1.83 EUR
Mindestbestellmenge: 7
SQJ912AEP-T1_GE3 sqj912aep.pdf
SQJ912AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO-8
auf Bestellung 5369 Stücke:
Lieferzeit 21-28 Tag (e)
SQJ940EP-T1_GE3 sqj940ep.pdf
SQJ940EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
SQM120N06-3m5L_GE3 sqm120n06-3m5l.pdf
SQM120N06-3m5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1481 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.85 EUR
10+ 8.27 EUR
100+ 6.69 EUR
Mindestbestellmenge: 3
SQM120P04-04L_GE3 sqm120p0.pdf
SQM120P04-04L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.61 EUR
10+ 7.23 EUR
100+ 5.85 EUR
Mindestbestellmenge: 4
SQS462EN-T1_GE3 sqs462en.pdf
SQS462EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2893 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.37 EUR
14+ 1.94 EUR
100+ 1.51 EUR
500+ 1.28 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 11
SQS484EN-T1_GE3 sqs484en.pdf
SQS484EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
auf Bestellung 14249 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.63 EUR
12+ 2.34 EUR
100+ 1.82 EUR
500+ 1.51 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 10
SUD35N10-26P-E3 sud35n10-26p.pdf
SUD35N10-26P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 35A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 308 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.97 EUR
10+ 4.13 EUR
100+ 3.29 EUR
Mindestbestellmenge: 6
SUP85N10-10-GE3 SUP%2CSUB85N10-10.pdf
SUP85N10-10-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
auf Bestellung 504 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.29 EUR
50+ 12.12 EUR
100+ 10.39 EUR
500+ 9.23 EUR
Mindestbestellmenge: 2
TN2404K-T1-GE3 tn2404k.pdf
TN2404K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 7850 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SIRA20DP-T1-RE3 sira20dp.pdf
SIRA20DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.63 EUR
Mindestbestellmenge: 3000
SQJQ480E-T1_GE3 sqjq480e.pdf
SQJQ480E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 150A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8625 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+3.95 EUR
Mindestbestellmenge: 2000
SIRA20DP-T1-RE3 sira20dp.pdf
SIRA20DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
auf Bestellung 7207 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.95 EUR
10+ 3.23 EUR
100+ 2.51 EUR
500+ 2.13 EUR
1000+ 1.73 EUR
Mindestbestellmenge: 7
SQJQ480E-T1_GE3 sqjq480e.pdf
SQJQ480E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 150A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8625 pF @ 25 V
auf Bestellung 5760 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.88 EUR
10+ 7.07 EUR
100+ 5.8 EUR
500+ 4.94 EUR
1000+ 4.16 EUR
Mindestbestellmenge: 4
SIHH28N60E-T1-GE3 sihh28n60e.pdf
SIHH28N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A PPAK 8 X 8
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 14A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2614 pF @ 100 V
Produkt ist nicht verfügbar
SiR696DP-T1-GE3 sir696dp.pdf
SiR696DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 125V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 125 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 75 V
Produkt ist nicht verfügbar
SIR606DP-T1-GE3 sir606dp.pdf
SIR606DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Power Dissipation (Max): 44.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
Produkt ist nicht verfügbar
SIA468DJ-T1-GE3 sia468dj.pdf
SIA468DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V
Produkt ist nicht verfügbar
Si5948DU-T1-GE3 si5948du.pdf
Si5948DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
Mindestbestellmenge: 3000
SIRB40DP-T1-GE3 sirb40dp.pdf
SIRB40DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
Si7111EDN-T1-GE3 si7111edn.pdf
Si7111EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
auf Bestellung 8950 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
6000+ 0.53 EUR
Mindestbestellmenge: 3000
SiA928DJ-T1-GE3 sia928dj.pdf
SiA928DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIRA60DP-T1-GE3 sira60dp.pdf
SIRA60DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.42 EUR
Mindestbestellmenge: 3000
SI7615CDN-T1-GE3 si7615cdn.pdf
SI7615CDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V
Produkt ist nicht verfügbar
SiUD403ED-T1-GE3 siud403ed.pdf
SiUD403ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
Mindestbestellmenge: 3000
SiUD412ED-T1-GE3 siud412ed.pdf
SiUD412ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 117000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.22 EUR
6000+ 0.21 EUR
9000+ 0.18 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
SiRC16DP-T1-GE3 sirc16dp.pdf
SiRC16DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Produkt ist nicht verfügbar
SISB46DN-T1-GE3 sisb46dn.pdf
SISB46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V POWERPAK 1212-8
Produkt ist nicht verfügbar
SiJ494DP-T1-GE3 sij494dp.pdf
SiJ494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Power Dissipation (Max): 69.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 75 V
Produkt ist nicht verfügbar
SIRA24DP-T1-GE3 sira24dp.pdf
SIRA24DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.83 EUR
6000+ 0.79 EUR
Mindestbestellmenge: 3000
SISA24DN-T1-GE3 sisa24dn.pdf
SISA24DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Produkt ist nicht verfügbar
SiSA96DN-T1-GE3 sisa96dn.pdf
SiSA96DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.34 EUR
6000+ 0.33 EUR
9000+ 0.3 EUR
Mindestbestellmenge: 3000
Si3493DDV-T1-GE3 si3493ddv.pdf
Si3493DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 20V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Produkt ist nicht verfügbar
SiRA88DP-T1-GE3 sira88dp.pdf
SiRA88DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.45 EUR
Mindestbestellmenge: 3000
Si5448DU-T1-GE3 si5448du.pdf
Si5448DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 25A PPAK
Produkt ist nicht verfügbar
SiR626DP-T1-RE3 sir626dp.pdf
SiR626DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.96 EUR
Mindestbestellmenge: 3000
SiR680DP-T1-RE3 sir680dp.pdf
SiR680DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 100A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.39 EUR
Mindestbestellmenge: 3000
SiR668DP-T1-RE3 sir668dp.pdf
SiR668DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 95A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Produkt ist nicht verfügbar
SiR632DP-T1-RE3 sir632dp.pdf
SiR632DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 29A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Power Dissipation (Max): 69.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V
Produkt ist nicht verfügbar
SiR692DP-T1-RE3 sir692dp.pdf
SiR692DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 24.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.2A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 125 V
Produkt ist nicht verfügbar
SiR696DP-T1-GE3 sir696dp.pdf
SiR696DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 125V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 125 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 75 V
Produkt ist nicht verfügbar
SIR606DP-T1-GE3 sir606dp.pdf
SIR606DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Power Dissipation (Max): 44.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
auf Bestellung 2563 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
10+ 2.89 EUR
100+ 2.25 EUR
500+ 1.91 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 8
SIA468DJ-T1-GE3 sia468dj.pdf
SIA468DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 15 V
auf Bestellung 3023 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.48 EUR
100+ 1.1 EUR
500+ 0.87 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 16
Si5948DU-T1-GE3 si5948du.pdf
Si5948DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6A PPAK CHIPFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® ChipFet Dual
Part Status: Active
auf Bestellung 3239 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
20+ 1.35 EUR
100+ 0.94 EUR
500+ 0.78 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
SIRB40DP-T1-GE3 sirb40dp.pdf
SIRB40DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46.2W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2287 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.64 EUR
10+ 3.26 EUR
100+ 2.54 EUR
500+ 2.1 EUR
1000+ 1.66 EUR
Mindestbestellmenge: 8
Si7111EDN-T1-GE3 si7111edn.pdf
Si7111EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
auf Bestellung 11331 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
Mindestbestellmenge: 18
SiA928DJ-T1-GE3 sia928dj.pdf
SiA928DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIRA60DP-T1-GE3 sira60dp.pdf
SIRA60DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.94mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 15 V
auf Bestellung 4278 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.8 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 8
SI7615CDN-T1-GE3 si7615cdn.pdf
SI7615CDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
SiUD403ED-T1-GE3 siud403ed.pdf
SiUD403ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V
auf Bestellung 11633 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
42+ 0.63 EUR
100+ 0.32 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 30
SiUD412ED-T1-GE3 siud412ed.pdf
SiUD412ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 500MA PPAK 0806
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 0806
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V
auf Bestellung 123931 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
31+ 0.84 EUR
100+ 0.42 EUR
500+ 0.35 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 22
SiRC16DP-T1-GE3 sirc16dp.pdf
SiRC16DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
auf Bestellung 762 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.91 EUR
11+ 2.39 EUR
100+ 1.86 EUR
500+ 1.57 EUR
Mindestbestellmenge: 9
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