Die Produkte vishay siliconix

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SIC438DED-T1-GE3 SIC438DED-T1-GE3 sic437.pdf Vishay Siliconix Description: 4.5 - 28V,8A MICROBUCK ULTRASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
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SIC438CED-T1-GE3 SIC438CED-T1-GE3 sic437.pdf Vishay Siliconix Description: 4.5 - 28V,8A MICROBUCK ULTRASONI
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
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SIC431CED-T1-GE3 SIC431CED-T1-GE3 sic431.pdf Vishay Siliconix Description: 4.5 - 24V,20A MICROBUCK ULTASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: 4.5 - 24V,20A MICROBUCK ULTASONI
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
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auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
4+ 8.24 EUR
10+ 7.39 EUR
25+ 6.99 EUR
100+ 6.06 EUR
250+ 5.75 EUR
500+ 5.16 EUR
1000+ 4.84 EUR
SI3460DDV-T1-BE3 SI3460DDV-T1-BE3 si3460ddv.pdf Vishay Siliconix Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
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SIHA25N60EFL-GE3 SIHA25N60EFL-GE3 siha25n60efl.pdf Vishay Siliconix Description: N-CHANNEL 600V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.64 EUR
10+ 11.35 EUR
100+ 9.3 EUR
500+ 7.91 EUR
SQJ974EP-T1_BE3 SQJ974EP-T1_BE3 sqj974ep.pdf Vishay Siliconix Description: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
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SIHD11N80AE-T4-GE3 SIHD11N80AE-T4-GE3 sihd11n80ae.pdf Vishay Siliconix Description: N-CHANNEL 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SIHD11N80AE-T1-GE3 SIHD11N80AE-T1-GE3 sihd11n80ae.pdf Vishay Siliconix Description: N-CHANNEL 800V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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SIC451ED-T1-GE3 SIC451ED-T1-GE3 sic450_sic451_sic453.pdf Vishay Siliconix Description: MICROBUCK DC/DC CONVERTER 25 A
Function: Step-Down
Number of Outputs: 1
Part Status: Active
Mounting Type: Surface Mount
Voltage - Output (Min/Fixed): 0.3V
Output Type: Adjustable
Package / Case: 34-PowerWFQFN
Packaging: Tape & Reel (TR)
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP34-57
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 25A
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auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 8.28 EUR
Vishay Siliconix Description: MICROBUCK DC/DC CONVERTER 25 A
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.3V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP34-57
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 25A
Function: Step-Down
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auf Bestellung 3585 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.09 EUR
10+ 12.66 EUR
25+ 11.97 EUR
100+ 10.38 EUR
250+ 9.84 EUR
500+ 8.83 EUR
1000+ 8.28 EUR
SQJ433EP-T1_BE3 SQJ433EP-T1_BE3 sqj433ep.pdf Vishay Siliconix Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SQJ431AEP-T1_BE3 SQJ431AEP-T1_BE3 sqj431aep.pdf Vishay Siliconix Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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SQJ433EP-T1_GE3 sqj433ep.pdf Vishay Siliconix Description: MOSFET P-CH 30V 75A PPAK SO-8
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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DG2733EDN-T1-GE4 DG2733EDN-T1-GE4 dg2535e_dg2733e.pdf Vishay Siliconix Description: IC SWITCH SPDT DUAL 10DFN
Part Status: Active
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel-to-Channel Matching (ΔRon): 60mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -90dB @ 100kHz
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
-3db Bandwidth: 120MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Circuits: 2
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Vishay Siliconix Description: IC SWITCH SPDT DUAL 10DFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -90dB @ 100kHz
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
-3db Bandwidth: 120MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel-to-Channel Matching (ΔRon): 60mOhm
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auf Bestellung 1152 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.11 EUR
10+ 3.66 EUR
25+ 3.48 EUR
100+ 2.86 EUR
250+ 2.67 EUR
500+ 2.36 EUR
1000+ 1.93 EUR
SQS140ENW-T1_GE3 SQS140ENW-T1_GE3 sqs140enw.pdf Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
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Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.5V @ 250µA
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auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.3 EUR
10+ 2.95 EUR
SQA411CEJW-T1_GE3 SQA411CEJW-T1_GE3 sqa411cejw.pdf Vishay Siliconix Description: AUTOMOTIVE P-CHANNEL 60 V (D-S)
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.46A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
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SI4830CDY-T1-E3 SI4830CDY-T1-E3 si4830cd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 1mA
FET Feature: Logic Level Gate
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SQ1539EH-T1_GE3 sq1539eh.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V POWERPAKSC70-6
Drain to Source Voltage (Vdss): 30V
FET Type: N and P-Channel
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.6V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 15V, 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
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SUM90100E-GE3 SUM90100E-GE3 sum90100e.pdf Vishay Siliconix Description: N-CHANNEL 200-V (D-S) MOSFET D2P
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3930 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
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SI7322DN-T1-E3 SI7322DN-T1-E3 si7322dn.pdf Vishay Siliconix Description: MOSFET N-CH 100V 18A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CH 100V 18A PPAK 1212-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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SIHA22N60EL-GE3 SIHA22N60EL-GE3 siha22n60el.pdf Vishay Siliconix Description: N-CHANNEL600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SIHA22N60E-GE3 SIHA22N60E-GE3 siha22n60e.pdf Vishay Siliconix Description: N-CHANNEL 600V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Technology: MOSFET (Metal Oxide)
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SIHA22N60AE-GE3 SIHA22N60AE-GE3 siha22n60ae.pdf Vishay Siliconix Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
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Vishay Siliconix Description: N-CHANNEL 600V
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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SQJ860EP-T1_BE3 SQJ860EP-T1_BE3 sqj860ep.pdf Vishay Siliconix Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
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SQJ418EP-T1_GE3 SQJ418EP-T1_GE3 sqj418ep.pdf Vishay Siliconix Description: MOSFET N-CH 100V 48A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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SIHA21N65EF-GE3 SIHA21N65EF-GE3 siha21n65ef.pdf Vishay Siliconix Description: N-CHANNEL 600V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
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DG9234EDY-T1-GE3 DG9234EDY-T1-GE3 dg9232e.pdf Vishay Siliconix Description: IC SWITCH SPST DUAL 8SOIC
Channel-to-Channel Matching (ΔRon): 400mOhm
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -108dB @ 1MHz
Charge Injection: -0.78pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Channel Capacitance (CS(off), CD(off)): 3.8pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
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Vishay Siliconix Description: IC SWITCH SPST DUAL 8SOIC
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -108dB @ 1MHz
Charge Injection: -0.78pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
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IRFR9220PBF-BE3 IRFR9220PBF-BE3 sihfr922.pdf Vishay Siliconix Description: P-CHANNEL 200V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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DG405DJ DG405DJ DG401,403,405_Rev2009.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT 16DIP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Crosstalk: -90dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
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DG405DY DG405DY DG401,403,405_Rev2009.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT 16SOIC
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Crosstalk: -90dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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SIRC16DP-T1-RE3 SIRC16DP-T1-RE3 sirc16dp.pdf Vishay Siliconix Description: N-CHANNEL 25-V (D-S) MOSFET W/SC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
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Vishay Siliconix Description: N-CHANNEL 25-V (D-S) MOSFET W/SC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
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SIHH250N60EF-T1GE3 Vishay Siliconix Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: EF SERIES POWER MOSFET WITH FAST
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
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SIHFR120-GE3 SIHFR120-GE3 sihfr120.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 100V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CHANNEL 100V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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auf Bestellung 2748 Stücke
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14+ 1.9 EUR
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500+ 1.02 EUR
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SQUN700E-T1_GE3 SQUN700E-T1_GE3 squn700e.pdf Vishay Siliconix Description: 40-V N- & P-CH COMMON DRAIN + 20
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 200V, 40V
FET Type: 2 N-Channel (Dual), P-Channel
Power - Max: 50W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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SIZ254DT-T1-GE3 SIZ254DT-T1-GE3 siz254dt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Type: 2 N-Channel (Dual)
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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SIP32430EVB SIP32430EVB sip32430.pdf Vishay Siliconix Description: EVAL BOARD FOR SIP32430
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: SIP32430
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
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SIHFR9220-GE3 SIHFR9220-GE3 sihfr922.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 200V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET P-CHANNEL 200V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SIHFRC20TR-GE3 SIHFRC20TR-GE3 sihfrc20.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
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Vishay Siliconix Description: MOSFET N-CHANNEL 600V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
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SIHFR320TR-GE3 SIHFR320TR-GE3 sihfr320.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 400V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CHANNEL 400V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SIHFR320TRL-GE3 SIHFR320TRL-GE3 sihfr320.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 400V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
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Vishay Siliconix Description: MOSFET N-CHANNEL 400V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SIHFBF30S-GE3 SIHFBF30S-GE3 sihbf30s.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 900V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
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Vishay Siliconix Description: MOSFET N-CHANNEL 900V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 900 V
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500+ 3.04 EUR
SIHFBE30S-GE3 SIHFBE30S-GE3 sihfbe30.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
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SIHFR9310TRL-GE3 SIHFR9310TRL-GE3 sihfr931.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 400V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
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SIHFBE30STRL-GE3 SIHFBE30STRL-GE3 sihfbe30.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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SIHFR024-GE3 SIHFR024-GE3 sihfr024.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 60V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SIHFBC40AS-GE3 SIHFBC40AS-GE3 sihfbc40.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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SIHFL210TR-GE3 SIHFL210TR-GE3 sihfl210.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 200V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
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SIHFR9310TRR-GE3 SIHFR9310TRR-GE3 sihfr931.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 400V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SIHF9620S-GE3 SIHF9620S-GE3 sihf9620.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 200V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
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SIDR626EP-T1-RE3 SIDR626EP-T1-RE3 sidr626ep.pdf Vishay Siliconix Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.74mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.8A (Ta), 227A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIZF914DT-T1-GE3 sizf914dt.pdf Vishay Siliconix Description: DUAL N-CH 25-V (D-S) MOSFET W/SC
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
FET Feature: Standard
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SI2323DS-T1-BE3 SI2323DS-T1-BE3 72024.pdf Vishay Siliconix Description: P-CHANNEL 20-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SQJB90EP-T1_GE3 SQJB90EP-T1_GE3 sqjb90ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 80V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
FET Type: 2 N-Channel (Dual)
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
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SIC788CD-T1-GE3 SIC788CD-T1-GE3 sic788a.pdf Vishay Siliconix Description: 50A VRPOWER INTEGRATED POWER ST
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
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Vishay Siliconix Description: 50A VRPOWER INTEGRATED POWER ST
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.33 EUR
10+ 6.59 EUR
25+ 6.22 EUR
100+ 5.29 EUR
250+ 4.97 EUR
500+ 4.35 EUR
1000+ 3.87 EUR
SISA34DN-T1-GE3 SISA34DN-T1-GE3 sisa34dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK1212-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® 1212-8
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 15 Stücke
Lieferzeit 21-28 Tag (e)
SIC468ED-T1-GE3 SIC468ED-T1-GE3 sic46x.pdf Vishay Siliconix Description: SYNC REG 4A MICROBUCK PP MLP55-2
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 15V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 6.92 EUR
Vishay Siliconix Description: SYNC REG 4A MICROBUCK PP MLP55-2
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 15V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 12412 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.78 EUR
10+ 10.58 EUR
25+ 10 EUR
100+ 8.66 EUR
250+ 8.22 EUR
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IRFR320TRPBF-BE3 IRFR320TRPBF-BE3 sihfr320.pdf Vishay Siliconix Description: N-CHANNEL 400V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ443EP-T1_BE3 SQJ443EP-T1_BE3 sqj443ep.pdf Vishay Siliconix Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC438DED-T1-GE3 sic437.pdf
SIC438DED-T1-GE3
Hersteller: Vishay Siliconix
Description: 4.5 - 28V,8A MICROBUCK ULTRASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC438CED-T1-GE3 sic437.pdf
SIC438CED-T1-GE3
Hersteller: Vishay Siliconix
Description: 4.5 - 28V,8A MICROBUCK ULTRASONI
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 25.2V
Synchronous Rectifier: Yes
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC431CED-T1-GE3 sic431.pdf
SIC431CED-T1-GE3
Hersteller: Vishay Siliconix
Description: 4.5 - 24V,20A MICROBUCK ULTASONI
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SIC431CED-T1-GE3 sic431.pdf
SIC431CED-T1-GE3
Hersteller: Vishay Siliconix
Description: 4.5 - 24V,20A MICROBUCK ULTASONI
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 21.6V
Synchronous Rectifier: Yes
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
4+ 8.24 EUR
10+ 7.39 EUR
25+ 6.99 EUR
100+ 6.06 EUR
250+ 5.75 EUR
500+ 5.16 EUR
1000+ 4.84 EUR
SI3460DDV-T1-BE3 si3460ddv.pdf
SI3460DDV-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA25N60EFL-GE3 siha25n60efl.pdf
SIHA25N60EFL-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 146mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2274 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
3+ 12.64 EUR
10+ 11.35 EUR
100+ 9.3 EUR
500+ 7.91 EUR
SQJ974EP-T1_BE3 sqj974ep.pdf
SQJ974EP-T1_BE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD11N80AE-T4-GE3 sihd11n80ae.pdf
SIHD11N80AE-T4-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD11N80AE-T1-GE3 sihd11n80ae.pdf
SIHD11N80AE-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC451ED-T1-GE3 sic450_sic451_sic453.pdf
SIC451ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBUCK DC/DC CONVERTER 25 A
Function: Step-Down
Number of Outputs: 1
Part Status: Active
Mounting Type: Surface Mount
Voltage - Output (Min/Fixed): 0.3V
Output Type: Adjustable
Package / Case: 34-PowerWFQFN
Packaging: Tape & Reel (TR)
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP34-57
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 25A
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Lieferzeit 21-28 Tag (e)
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3000+ 8.28 EUR
SIC451ED-T1-GE3 sic450_sic451_sic453.pdf
SIC451ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBUCK DC/DC CONVERTER 25 A
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 34-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.3V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 12V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP34-57
Topology: Buck
Voltage - Input (Max): 20V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 25A
Function: Step-Down
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Lieferzeit 21-28 Tag (e)
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2+ 14.09 EUR
10+ 12.66 EUR
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500+ 8.83 EUR
1000+ 8.28 EUR
SQJ433EP-T1_BE3 sqj433ep.pdf
SQJ433EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) 175C MOSFET
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ431AEP-T1_BE3 sqj431aep.pdf
SQJ431AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 200-V (D-S) 175C MOSFE
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ433EP-T1_GE3 sqj433ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A PPAK SO-8
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 4877 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2733EDN-T1-GE4 dg2535e_dg2733e.pdf
DG2733EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT DUAL 10DFN
Part Status: Active
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel-to-Channel Matching (ΔRon): 60mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -90dB @ 100kHz
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
-3db Bandwidth: 120MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Circuits: 2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1152 Stücke - Preis und Lieferfrist anzeigen
DG2733EDN-T1-GE4 dg2535e_dg2733e.pdf
DG2733EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT DUAL 10DFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -90dB @ 100kHz
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
-3db Bandwidth: 120MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel-to-Channel Matching (ΔRon): 60mOhm
auf Bestellung 1152 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.11 EUR
10+ 3.66 EUR
25+ 3.48 EUR
100+ 2.86 EUR
250+ 2.67 EUR
500+ 2.36 EUR
1000+ 1.93 EUR
SQS140ENW-T1_GE3 sqs140enw.pdf
SQS140ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SLW
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
SQS140ENW-T1_GE3 sqs140enw.pdf
SQS140ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® 1212-8SLW
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3111 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SLW
Vgs(th) (Max) @ Id: 3.5V @ 250µA
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.3 EUR
10+ 2.95 EUR
SQA411CEJW-T1_GE3 sqa411cejw.pdf
SQA411CEJW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 60 V (D-S)
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.46A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4830CDY-T1-E3 si4830cd.pdf
SI4830CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 1mA
FET Feature: Logic Level Gate
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ1539EH-T1_GE3 sq1539eh.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V POWERPAKSC70-6
Drain to Source Voltage (Vdss): 30V
FET Type: N and P-Channel
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 2.6V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, 1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 15V, 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90100E-GE3 sum90100e.pdf
SUM90100E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 200-V (D-S) MOSFET D2P
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3930 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7322DN-T1-E3 si7322dn.pdf
SI7322DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2985 Stücke - Preis und Lieferfrist anzeigen
SI7322DN-T1-E3 si7322dn.pdf
SI7322DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18A PPAK 1212-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2985 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.37 EUR
10+ 3.89 EUR
100+ 3.04 EUR
500+ 2.51 EUR
1000+ 1.98 EUR
SIHA22N60EL-GE3 siha22n60el.pdf
SIHA22N60EL-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL600V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA22N60E-GE3 siha22n60e.pdf
SIHA22N60E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA22N60AE-GE3 siha22n60ae.pdf
SIHA22N60AE-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
1000+ 5.47 EUR
SIHA22N60AE-GE3 siha22n60ae.pdf
SIHA22N60AE-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
3+ 9.67 EUR
10+ 8.67 EUR
100+ 7.11 EUR
500+ 6.05 EUR
SQJ860EP-T1_BE3 sqj860ep.pdf
SQJ860EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ418EP-T1_GE3 sqj418ep.pdf
SQJ418EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 48A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA21N65EF-GE3 siha21n65ef.pdf
SIHA21N65EF-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG9234EDY-T1-GE3 dg9232e.pdf
DG9234EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
Channel-to-Channel Matching (ΔRon): 400mOhm
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -108dB @ 1MHz
Charge Injection: -0.78pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Channel Capacitance (CS(off), CD(off)): 3.8pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2219 Stücke - Preis und Lieferfrist anzeigen
DG9234EDY-T1-GE3 dg9232e.pdf
DG9234EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -108dB @ 1MHz
Charge Injection: -0.78pC
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 25Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Switch Time (Ton, Toff) (Max): 75ns, 50ns
auf Bestellung 2219 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.98 EUR
10+ 5.37 EUR
25+ 5.06 EUR
100+ 4.31 EUR
250+ 4.05 EUR
500+ 3.54 EUR
1000+ 3.15 EUR
IRFR9220PBF-BE3 sihfr922.pdf
IRFR9220PBF-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 200V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG405DJ DG401,403,405_Rev2009.pdf
DG405DJ
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16DIP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Crosstalk: -90dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5920 Stücke - Preis und Lieferfrist anzeigen
DG405DY DG401,403,405_Rev2009.pdf
DG405DY
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16SOIC
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Crosstalk: -90dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15101 Stücke - Preis und Lieferfrist anzeigen
SIRC16DP-T1-RE3 sirc16dp.pdf
SIRC16DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25-V (D-S) MOSFET W/SC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5900 Stücke - Preis und Lieferfrist anzeigen
3000+ 1.65 EUR
SIRC16DP-T1-RE3 sirc16dp.pdf
SIRC16DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25-V (D-S) MOSFET W/SC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 54.3W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 5900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
8+ 3.61 EUR
10+ 3.24 EUR
100+ 2.52 EUR
500+ 2.09 EUR
1000+ 1.65 EUR
SIHH250N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
SIHH250N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
3+ 11.52 EUR
10+ 10.35 EUR
SIHFR120-GE3 sihfr120.pdf
SIHFR120-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 100V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2748 Stücke - Preis und Lieferfrist anzeigen
SIHFR120-GE3 sihfr120.pdf
SIHFR120-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 100V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2748 Stücke
Lieferzeit 21-28 Tag (e)
14+ 1.9 EUR
16+ 1.69 EUR
100+ 1.29 EUR
500+ 1.02 EUR
1000+ 0.82 EUR
SQUN700E-T1_GE3 squn700e.pdf
SQUN700E-T1_GE3
Hersteller: Vishay Siliconix
Description: 40-V N- & P-CH COMMON DRAIN + 20
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 200V, 40V
FET Type: 2 N-Channel (Dual), P-Channel
Power - Max: 50W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ254DT-T1-GE3 siz254dt.pdf
SIZ254DT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Type: 2 N-Channel (Dual)
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32430EVB sip32430.pdf
SIP32430EVB
Hersteller: Vishay Siliconix
Description: EVAL BOARD FOR SIP32430
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: SIP32430
Type: Power Management
Function: Power Distribution Switch (Load Switch)
Packaging: Bulk
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
1+ 157.66 EUR
SIHFR9220-GE3 sihfr922.pdf
SIHFR9220-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 200V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.92 EUR
SIHFR9220-GE3 sihfr922.pdf
SIHFR9220-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 200V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
12+ 2.29 EUR
13+ 2.02 EUR
100+ 1.55 EUR
500+ 1.22 EUR
1000+ 0.98 EUR
SIHFRC20TR-GE3 sihfrc20.pdf
SIHFRC20TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
2000+ 1.01 EUR
SIHFRC20TR-GE3 sihfrc20.pdf
SIHFRC20TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
11+ 2.52 EUR
12+ 2.22 EUR
100+ 1.7 EUR
500+ 1.35 EUR
1000+ 1.08 EUR
SIHFR320TR-GE3 sihfr320.pdf
SIHFR320TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 400V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1959 Stücke - Preis und Lieferfrist anzeigen
SIHFR320TR-GE3 sihfr320.pdf
SIHFR320TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 400V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1959 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.39 EUR
13+ 2.11 EUR
100+ 1.62 EUR
500+ 1.28 EUR
1000+ 1.03 EUR
SIHFR320TRL-GE3 sihfr320.pdf
SIHFR320TRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 400V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
3000+ 1.06 EUR
SIHFR320TRL-GE3 sihfr320.pdf
SIHFR320TRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 400V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
10+ 2.65 EUR
12+ 2.32 EUR
100+ 1.78 EUR
500+ 1.41 EUR
1000+ 1.13 EUR
SIHFBF30S-GE3 sihbf30s.pdf
SIHFBF30S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 900V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 998 Stücke - Preis und Lieferfrist anzeigen
SIHFBF30S-GE3 sihbf30s.pdf
SIHFBF30S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 900V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 900 V
auf Bestellung 998 Stücke
Lieferzeit 21-28 Tag (e)
6+ 5.12 EUR
10+ 4.61 EUR
100+ 3.7 EUR
500+ 3.04 EUR
SIHFBE30S-GE3 sihfbe30.pdf
SIHFBE30S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFR9310TRL-GE3 sihfr931.pdf
SIHFR9310TRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 400V
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFBE30STRL-GE3 sihfbe30.pdf
SIHFBE30STRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFR024-GE3 sihfr024.pdf
SIHFR024-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFBC40AS-GE3 sihfbc40.pdf
SIHFBC40AS-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFL210TR-GE3 sihfl210.pdf
SIHFL210TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 200V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFR9310TRR-GE3 sihfr931.pdf
SIHFR9310TRR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 400V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF9620S-GE3 sihf9620.pdf
SIHF9620S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 200V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR626EP-T1-RE3 sidr626ep.pdf
SIDR626EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.74mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.8A (Ta), 227A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZF914DT-T1-GE3 sizf914dt.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CH 25-V (D-S) MOSFET W/SC
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, 98nC @ 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 10V, 0.9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V, 4670pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 40A (Tc), 52A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2323DS-T1-BE3 72024.pdf
SI2323DS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB90EP-T1_GE3 sqjb90ep.pdf
SQJB90EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 80V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 80V
FET Type: 2 N-Channel (Dual)
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC788CD-T1-GE3 sic788a.pdf
SIC788CD-T1-GE3
Hersteller: Vishay Siliconix
Description: 50A VRPOWER INTEGRATED POWER ST
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
3000+ 3.87 EUR
SIC788CD-T1-GE3 sic788a.pdf
SIC788CD-T1-GE3
Hersteller: Vishay Siliconix
Description: 50A VRPOWER INTEGRATED POWER ST
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 50A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
4+ 7.33 EUR
10+ 6.59 EUR
25+ 6.22 EUR
100+ 5.29 EUR
250+ 4.97 EUR
500+ 4.35 EUR
1000+ 3.87 EUR
SISA34DN-T1-GE3 sisa34dn.pdf
SISA34DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
SISA34DN-T1-GE3 sisa34dn.pdf
SISA34DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK1212-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 15 Stücke
Lieferzeit 21-28 Tag (e)
SIC468ED-T1-GE3 sic46x.pdf
SIC468ED-T1-GE3
Hersteller: Vishay Siliconix
Description: SYNC REG 4A MICROBUCK PP MLP55-2
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 15V
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12412 Stücke - Preis und Lieferfrist anzeigen
3000+ 6.92 EUR
SIC468ED-T1-GE3 sic46x.pdf
SIC468ED-T1-GE3
Hersteller: Vishay Siliconix
Description: SYNC REG 4A MICROBUCK PP MLP55-2
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 15V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
auf Bestellung 12412 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12000 Stücke - Preis und Lieferfrist anzeigen
3+ 11.78 EUR
10+ 10.58 EUR
25+ 10 EUR
100+ 8.66 EUR
250+ 8.22 EUR
500+ 7.38 EUR
1000+ 6.92 EUR
IRFR320TRPBF-BE3 sihfr320.pdf
IRFR320TRPBF-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 400V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ443EP-T1_BE3 sqj443ep.pdf
SQJ443EP-T1_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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