Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10948) > Seite 113 nach 183

Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 90 108 109 110 111 112 113 114 115 116 117 118 126 144 162 180 183  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SIHA15N60E-E3 SIHA15N60E-E3 Vishay Siliconix siha15n60e.pdf Description: MOSFET N-CH 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
SIHA22N60E-E3 SIHA22N60E-E3 Vishay Siliconix siha22n60e.pdf Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
SIHG22N65E-GE3 SIHG22N65E-GE3 Vishay Siliconix sihg22n65e.pdf Description: MOSFET N-CH 650V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHU6N65E-GE3 SIHU6N65E-GE3 Vishay Siliconix sihu6n65e.pdf Description: MOSFET N-CH 650V 7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar
SIHP22N65E-GE3 SIHP22N65E-GE3 Vishay Siliconix sihp22n65e.pdf Description: MOSFET N-CH 650V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHF22N65E-GE3 SIHF22N65E-GE3 Vishay Siliconix sihf22n65e.pdf Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHB22N65E-GE3 SIHB22N65E-GE3 Vishay Siliconix sihb22n65e.pdf Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHP15N65E-GE3 SIHP15N65E-GE3 Vishay Siliconix sihp15n65e.pdf Description: MOSFET N-CH 650V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Produkt ist nicht verfügbar
SIHF15N65E-GE3 SIHF15N65E-GE3 Vishay Siliconix sihf15n65e.pdf Description: MOSFET N-CH 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Produkt ist nicht verfügbar
SIHF6N65E-GE3 SIHF6N65E-GE3 Vishay Siliconix sihf6n65e.pdf Description: MOSFET N-CH 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar
SIHP24N65E-GE3 SIHP24N65E-GE3 Vishay Siliconix sihp24n65e.pdf Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
SIHP12N65E-GE3 SIHP12N65E-GE3 Vishay Siliconix sihp12n65e.pdf Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
Produkt ist nicht verfügbar
SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay Siliconix sihd6n65e.pdf Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2870 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.72 EUR
75+ 2.99 EUR
150+ 2.46 EUR
525+ 2.08 EUR
1050+ 1.77 EUR
2025+ 1.68 EUR
Mindestbestellmenge: 7
SIHB6N65E-GE3 SIHB6N65E-GE3 Vishay Siliconix sihb6n65e.pdf Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar
SI1308EDL-T1-GE3 SI1308EDL-T1-GE3 Vishay Siliconix si1308edl.pdf Description: MOSFET N-CH 30V 1.4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
auf Bestellung 38850 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.25 EUR
30000+ 0.24 EUR
Mindestbestellmenge: 3000
SI3993CDV-T1-GE3 SI3993CDV-T1-GE3 Vishay Siliconix Description: MOSFET 2P-CH 30V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
6000+ 0.37 EUR
9000+ 0.35 EUR
30000+ 0.34 EUR
Mindestbestellmenge: 3000
SIR172ADP-T1-GE3 SIR172ADP-T1-GE3 Vishay Siliconix sir172adp.pdf Description: MOSFET N-CH 30V 24A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 Vishay Siliconix si2392ads.pdf Description: MOSFET N-CH 100V 3.1A SOT23-3
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 SI2392ADS-T1-GE3 Vishay Siliconix si2392ads.pdf Description: MOSFET N-CH 100V 3.1A SOT23-3
Produkt ist nicht verfügbar
SI1416EDH-T1-GE3 SI1416EDH-T1-GE3 Vishay Siliconix si1416ed.pdf Description: MOSFET N-CH 30V 3.9A SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
SIA427ADJ-T1-GE3 SIA427ADJ-T1-GE3 Vishay Siliconix sia427adj.pdf Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.43 EUR
6000+ 0.4 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 3000
SI2338DS-T1-GE3 SI2338DS-T1-GE3 Vishay Siliconix si2338ds.pdf Description: MOSFET N-CH 30V 6A SOT23
Produkt ist nicht verfügbar
SI4501BDY-T1-GE3 SI4501BDY-T1-GE3 Vishay Siliconix si4501bd.pdf Description: MOSFET N/P-CH 30V/8V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W, 3.1W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SI1308EDL-T1-GE3 SI1308EDL-T1-GE3 Vishay Siliconix si1308edl.pdf Description: MOSFET N-CH 30V 1.4A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
auf Bestellung 40641 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2338DS-T1-GE3 SI2338DS-T1-GE3 Vishay Siliconix si2338ds.pdf Description: MOSFET N-CH 30V 6A SOT23
Produkt ist nicht verfügbar
SI4501BDY-T1-GE3 SI4501BDY-T1-GE3 Vishay Siliconix si4501bd.pdf Description: MOSFET N/P-CH 30V/8V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W, 3.1W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SIP32408DNP-T1-GE4 SIP32408DNP-T1-GE4 Vishay Siliconix sip32408.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 24128 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.26 EUR
25+ 1.17 EUR
100+ 0.94 EUR
250+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 18
SIP32409DNP-T1-GE4 SIP32409DNP-T1-GE4 Vishay Siliconix sip32408.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 32969 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.24 EUR
25+ 1.16 EUR
100+ 0.93 EUR
250+ 0.86 EUR
500+ 0.73 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
SIC620CD-T1-GE3 SIC620CD-T1-GE3 Vishay Siliconix sic620a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+3.95 EUR
6000+ 3.81 EUR
Mindestbestellmenge: 3000
SIC620ACD-T1-GE3 SIC620ACD-T1-GE3 Vishay Siliconix sic620a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+4 EUR
6000+ 3.84 EUR
Mindestbestellmenge: 3000
DG2502DB-T2-GE1 DG2502DB-T2-GE1 Vishay Siliconix dg2501.pdf Description: IC SW SPST-NOX4 200OHM 16WCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 200Ohm
-3db Bandwidth: 550MHz
Supplier Device Package: 16-WCSP (1.44x1.44)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -2pC
Crosstalk: -83dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Current - Leakage (IS(off)) (Max): 400pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.63 EUR
6000+ 1.55 EUR
Mindestbestellmenge: 3000
SIP32102DB-T1-GE1 SIP32102DB-T1-GE1 Vishay Siliconix sip32101.pdf Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.35 EUR
6000+ 1.28 EUR
15000+ 1.24 EUR
Mindestbestellmenge: 3000
SIC781CD-T1-GE3 SIC781CD-T1-GE3 Vishay Siliconix sic781cd.pdf Description: IC BUCK ADJ 50A 40MLP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIC620CD-T1-GE3 SIC620CD-T1-GE3 Vishay Siliconix sic620a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
auf Bestellung 11592 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.88 EUR
10+ 7.08 EUR
25+ 6.69 EUR
100+ 5.8 EUR
250+ 5.5 EUR
500+ 4.94 EUR
1000+ 4.16 EUR
Mindestbestellmenge: 4
SIC620ACD-T1-GE3 SIC620ACD-T1-GE3 Vishay Siliconix sic620a.pdf Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 6063 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.96 EUR
10+ 7.15 EUR
25+ 6.76 EUR
100+ 5.86 EUR
250+ 5.56 EUR
500+ 4.99 EUR
1000+ 4.21 EUR
Mindestbestellmenge: 4
DG2502DB-T2-GE1 DG2502DB-T2-GE1 Vishay Siliconix dg2501.pdf Description: IC SW SPST-NOX4 200OHM 16WCSP
Packaging: Cut Tape (CT)
Package / Case: 16-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 200Ohm
-3db Bandwidth: 550MHz
Supplier Device Package: 16-WCSP (1.44x1.44)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -2pC
Crosstalk: -83dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Current - Leakage (IS(off)) (Max): 400pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 8965 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.85 EUR
10+ 3.43 EUR
25+ 3.26 EUR
100+ 2.67 EUR
250+ 2.5 EUR
500+ 2.21 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 7
SIP32102DB-T1-GE1 SIP32102DB-T1-GE1 Vishay Siliconix sip32101.pdf Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 37227 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.17 EUR
10+ 2.85 EUR
25+ 2.71 EUR
100+ 2.22 EUR
250+ 2.08 EUR
500+ 1.84 EUR
1000+ 1.45 EUR
Mindestbestellmenge: 9
SIC781CD-T1-GE3 SIC781CD-T1-GE3 Vishay Siliconix sic781cd.pdf Description: IC BUCK ADJ 50A 40MLP
auf Bestellung 3075 Stücke:
Lieferzeit 21-28 Tag (e)
SIS612EDNT-T1-GE3 Vishay Siliconix sis612ednt.pdf Description: MOSFET N-CH 20V 50A SMT
Produkt ist nicht verfügbar
SI8457DB-T1-E1 SI8457DB-T1-E1 Vishay Siliconix si8457db.pdf Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.46 EUR
Mindestbestellmenge: 3000
SiHA25N50E-E3 SiHA25N50E-E3 Vishay Siliconix siha25n50e.pdf Description: MOSFET N-CH 500V 26A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.38 EUR
50+ 5.86 EUR
100+ 5.02 EUR
500+ 4.46 EUR
Mindestbestellmenge: 4
SIHG25N50E-GE3 SIHG25N50E-GE3 Vishay Siliconix sihg25n50e.pdf Description: MOSFET N-CH 500V 26A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
Produkt ist nicht verfügbar
SIHP25N50E-GE3 SIHP25N50E-GE3 Vishay Siliconix sihp25n50e.pdf Description: MOSFET N-CH 500V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
auf Bestellung 908 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.41 EUR
50+ 5.87 EUR
100+ 5.03 EUR
500+ 4.47 EUR
Mindestbestellmenge: 4
SI8457DB-T1-E1 SI8457DB-T1-E1 Vishay Siliconix si8457db.pdf Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.64 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 19
DG2750DN-T1-E4 DG2750DN-T1-E4 Vishay Siliconix dg2750.pdf Description: IC SWITCH SPDTX2 1OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 49MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.8V ~ 5V
Charge Injection: 4pC
Crosstalk: -60dB @ 300kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 2.1µs, 130ns
Channel Capacitance (CS(off), CD(off)): 36pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Part Status: Active
Number of Circuits: 2
auf Bestellung 1336 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.52 EUR
10+ 4.06 EUR
25+ 3.83 EUR
100+ 3.27 EUR
250+ 3.07 EUR
500+ 2.68 EUR
1000+ 2.22 EUR
Mindestbestellmenge: 6
SQ2308CES-T1-GE3 SQ2308CES-T1-GE3 Vishay Siliconix sq2308ces.pdf Description: MOSFET N-CH 60V 2.3A TO236
Produkt ist nicht verfügbar
SQ4940AEY-T1-GE3 SQ4940AEY-T1-GE3 Vishay Siliconix sq4940aey.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
Produkt ist nicht verfügbar
SQ4284EY-T1-GE3 SQ4284EY-T1-GE3 Vishay Siliconix sq4284ey.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
Produkt ist nicht verfügbar
SIHB28N60EF-GE3 SIHB28N60EF-GE3 Vishay Siliconix sihb28n60ef.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
auf Bestellung 1246 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.33 EUR
50+ 11.36 EUR
100+ 9.73 EUR
500+ 8.65 EUR
1000+ 7.41 EUR
Mindestbestellmenge: 2
SIHF28N60EF-GE3 SIHF28N60EF-GE3 Vishay Siliconix sihf28n60ef.pdf Description: MOSFET N-CH 600V 28A TO220
Produkt ist nicht verfügbar
SIHP28N60EF-GE3 SIHP28N60EF-GE3 Vishay Siliconix sihp28n60ef.pdf Description: MOSFET N-CH 600V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
Produkt ist nicht verfügbar
SIHP33N60EF-GE3 SIHP33N60EF-GE3 Vishay Siliconix sihp33n60ef.pdf Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.72 EUR
50+ 11.75 EUR
100+ 10.51 EUR
500+ 9.28 EUR
1000+ 8.35 EUR
Mindestbestellmenge: 2
SIA466EDJ-T1-GE3 SIA466EDJ-T1-GE3 Vishay Siliconix sia466edj.pdf Description: MOSFET N-CH 20V 25A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
Mindestbestellmenge: 3000
SIA466EDJ-T1-GE3 SIA466EDJ-T1-GE3 Vishay Siliconix sia466edj.pdf Description: MOSFET N-CH 20V 25A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 1 V
auf Bestellung 7578 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
19+ 1.37 EUR
100+ 1.05 EUR
500+ 0.83 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SQ7414AEN-T1-GE3 Vishay Siliconix sq7414aen.pdf Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
SQM120P06-07L_GE3 SQM120P06-07L_GE3 Vishay Siliconix sqm120p06-07l.pdf Description: MOSFET P-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V
Produkt ist nicht verfügbar
SQM100N10-10_GE3 SQM100N10-10_GE3 Vishay Siliconix sqm100n1.pdf Description: MOSFET N-CH 100V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+4.35 EUR
Mindestbestellmenge: 800
SIS407ADN-T1-GE3 SIS407ADN-T1-GE3 Vishay Siliconix sis407adn.pdf Description: MOSFET P-CH 20V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
Produkt ist nicht verfügbar
SIP2100DY-T1-GE3 SIP2100DY-T1-GE3 Vishay Siliconix sip2100.pdf Description: IC MTR DRV BIPOLR 3.8-5.5V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.8V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 3.8V ~ 5.5V
Supplier Device Package: 8-SOIC
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.44 EUR
Mindestbestellmenge: 2500
SIS407ADN-T1-GE3 SIS407ADN-T1-GE3 Vishay Siliconix sis407adn.pdf Description: MOSFET P-CH 20V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
Produkt ist nicht verfügbar
SIHA15N60E-E3 siha15n60e.pdf
SIHA15N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
SIHA22N60E-E3 siha22n60e.pdf
SIHA22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
SIHG22N65E-GE3 sihg22n65e.pdf
SIHG22N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHU6N65E-GE3 sihu6n65e.pdf
SIHU6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar
SIHP22N65E-GE3 sihp22n65e.pdf
SIHP22N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHF22N65E-GE3 sihf22n65e.pdf
SIHF22N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHB22N65E-GE3 sihb22n65e.pdf
SIHB22N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 22A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar
SIHP15N65E-GE3 sihp15n65e.pdf
SIHP15N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Produkt ist nicht verfügbar
SIHF15N65E-GE3 sihf15n65e.pdf
SIHF15N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Produkt ist nicht verfügbar
SIHF6N65E-GE3 sihf6n65e.pdf
SIHF6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar
SIHP24N65E-GE3 sihp24n65e.pdf
SIHP24N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
SIHP12N65E-GE3 sihp12n65e.pdf
SIHP12N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
Produkt ist nicht verfügbar
SIHD6N65E-GE3 sihd6n65e.pdf
SIHD6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2870 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.72 EUR
75+ 2.99 EUR
150+ 2.46 EUR
525+ 2.08 EUR
1050+ 1.77 EUR
2025+ 1.68 EUR
Mindestbestellmenge: 7
SIHB6N65E-GE3 sihb6n65e.pdf
SIHB6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar
SI1308EDL-T1-GE3 si1308edl.pdf
SI1308EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.4A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
auf Bestellung 38850 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.25 EUR
30000+ 0.24 EUR
Mindestbestellmenge: 3000
SI3993CDV-T1-GE3
SI3993CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V
Rds On (Max) @ Id, Vgs: 111mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-TSOP
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
6000+ 0.37 EUR
9000+ 0.35 EUR
30000+ 0.34 EUR
Mindestbestellmenge: 3000
SIR172ADP-T1-GE3 sir172adp.pdf
SIR172ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 15 V
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 si2392ads.pdf
SI2392ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT23-3
Produkt ist nicht verfügbar
SI2392ADS-T1-GE3 si2392ads.pdf
SI2392ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT23-3
Produkt ist nicht verfügbar
SI1416EDH-T1-GE3 si1416ed.pdf
SI1416EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.9A SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Produkt ist nicht verfügbar
SIA427ADJ-T1-GE3 sia427adj.pdf
SIA427ADJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.4 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 3000
SI2338DS-T1-GE3 si2338ds.pdf
SI2338DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A SOT23
Produkt ist nicht verfügbar
SI4501BDY-T1-GE3 si4501bd.pdf
SI4501BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 12A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W, 3.1W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SI1308EDL-T1-GE3 si1308edl.pdf
SI1308EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.4A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
auf Bestellung 40641 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2338DS-T1-GE3 si2338ds.pdf
SI2338DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A SOT23
Produkt ist nicht verfügbar
SI4501BDY-T1-GE3 si4501bd.pdf
SI4501BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 12A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W, 3.1W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 12A, 8A
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 15V
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SIP32408DNP-T1-GE4 sip32408.pdf
SIP32408DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 24128 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.26 EUR
25+ 1.17 EUR
100+ 0.94 EUR
250+ 0.87 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 18
SIP32409DNP-T1-GE4 sip32408.pdf
SIP32409DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 44mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 32969 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.24 EUR
25+ 1.16 EUR
100+ 0.93 EUR
250+ 0.86 EUR
500+ 0.73 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
SIC620CD-T1-GE3 sic620a.pdf
SIC620CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.95 EUR
6000+ 3.81 EUR
Mindestbestellmenge: 3000
SIC620ACD-T1-GE3 sic620a.pdf
SIC620ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+4 EUR
6000+ 3.84 EUR
Mindestbestellmenge: 3000
DG2502DB-T2-GE1 dg2501.pdf
DG2502DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 200OHM 16WCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 200Ohm
-3db Bandwidth: 550MHz
Supplier Device Package: 16-WCSP (1.44x1.44)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -2pC
Crosstalk: -83dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Current - Leakage (IS(off)) (Max): 400pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.63 EUR
6000+ 1.55 EUR
Mindestbestellmenge: 3000
SIP32102DB-T1-GE1 sip32101.pdf
SIP32102DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.35 EUR
6000+ 1.28 EUR
15000+ 1.24 EUR
Mindestbestellmenge: 3000
SIC781CD-T1-GE3 sic781cd.pdf
SIC781CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 50A 40MLP
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIC620CD-T1-GE3 sic620a.pdf
SIC620CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
auf Bestellung 11592 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.88 EUR
10+ 7.08 EUR
25+ 6.69 EUR
100+ 5.8 EUR
250+ 5.5 EUR
500+ 4.94 EUR
1000+ 4.16 EUR
Mindestbestellmenge: 4
SIC620ACD-T1-GE3 sic620a.pdf
SIC620ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 60A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 60A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 18V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 6063 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.96 EUR
10+ 7.15 EUR
25+ 6.76 EUR
100+ 5.86 EUR
250+ 5.56 EUR
500+ 4.99 EUR
1000+ 4.21 EUR
Mindestbestellmenge: 4
DG2502DB-T2-GE1 dg2501.pdf
DG2502DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 200OHM 16WCSP
Packaging: Cut Tape (CT)
Package / Case: 16-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 200Ohm
-3db Bandwidth: 550MHz
Supplier Device Package: 16-WCSP (1.44x1.44)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: -2pC
Crosstalk: -83dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 100ns, 60ns
Channel Capacitance (CS(off), CD(off)): 2.9pF, 2.8pF
Current - Leakage (IS(off)) (Max): 400pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 8965 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.43 EUR
25+ 3.26 EUR
100+ 2.67 EUR
250+ 2.5 EUR
500+ 2.21 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 7
SIP32102DB-T1-GE1 sip32101.pdf
SIP32102DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Input Type: Non-Inverting
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 37227 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.17 EUR
10+ 2.85 EUR
25+ 2.71 EUR
100+ 2.22 EUR
250+ 2.08 EUR
500+ 1.84 EUR
1000+ 1.45 EUR
Mindestbestellmenge: 9
SIC781CD-T1-GE3 sic781cd.pdf
SIC781CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC BUCK ADJ 50A 40MLP
auf Bestellung 3075 Stücke:
Lieferzeit 21-28 Tag (e)
SIS612EDNT-T1-GE3 sis612ednt.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A SMT
Produkt ist nicht verfügbar
SI8457DB-T1-E1 si8457db.pdf
SI8457DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.46 EUR
Mindestbestellmenge: 3000
SiHA25N50E-E3 siha25n50e.pdf
SiHA25N50E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 26A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.38 EUR
50+ 5.86 EUR
100+ 5.02 EUR
500+ 4.46 EUR
Mindestbestellmenge: 4
SIHG25N50E-GE3 sihg25n50e.pdf
SIHG25N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 26A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
Produkt ist nicht verfügbar
SIHP25N50E-GE3 sihp25n50e.pdf
SIHP25N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 100 V
auf Bestellung 908 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.41 EUR
50+ 5.87 EUR
100+ 5.03 EUR
500+ 4.47 EUR
Mindestbestellmenge: 4
SI8457DB-T1-E1 si8457db.pdf
SI8457DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4MICRO FOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-MICRO FOOT® (1.6x1.6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 6 V
auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
23+ 1.18 EUR
100+ 0.82 EUR
500+ 0.64 EUR
1000+ 0.52 EUR
Mindestbestellmenge: 19
DG2750DN-T1-E4 dg2750.pdf
DG2750DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDTX2 1OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1Ohm
-3db Bandwidth: 49MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.8V ~ 5V
Charge Injection: 4pC
Crosstalk: -60dB @ 300kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 2.1µs, 130ns
Channel Capacitance (CS(off), CD(off)): 36pF
Current - Leakage (IS(off)) (Max): 50nA (Typ)
Part Status: Active
Number of Circuits: 2
auf Bestellung 1336 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.52 EUR
10+ 4.06 EUR
25+ 3.83 EUR
100+ 3.27 EUR
250+ 3.07 EUR
500+ 2.68 EUR
1000+ 2.22 EUR
Mindestbestellmenge: 6
SQ2308CES-T1-GE3 sq2308ces.pdf
SQ2308CES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A TO236
Produkt ist nicht verfügbar
SQ4940AEY-T1-GE3 sq4940aey.pdf
SQ4940AEY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Produkt ist nicht verfügbar
SQ4284EY-T1-GE3 sq4284ey.pdf
SQ4284EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Produkt ist nicht verfügbar
SIHB28N60EF-GE3 sihb28n60ef.pdf
SIHB28N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
auf Bestellung 1246 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.33 EUR
50+ 11.36 EUR
100+ 9.73 EUR
500+ 8.65 EUR
1000+ 7.41 EUR
Mindestbestellmenge: 2
SIHF28N60EF-GE3 sihf28n60ef.pdf
SIHF28N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO220
Produkt ist nicht verfügbar
SIHP28N60EF-GE3 sihp28n60ef.pdf
SIHP28N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
Produkt ist nicht verfügbar
SIHP33N60EF-GE3 sihp33n60ef.pdf
SIHP33N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.72 EUR
50+ 11.75 EUR
100+ 10.51 EUR
500+ 9.28 EUR
1000+ 8.35 EUR
Mindestbestellmenge: 2
SIA466EDJ-T1-GE3 sia466edj.pdf
SIA466EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 25A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 1 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
Mindestbestellmenge: 3000
SIA466EDJ-T1-GE3 sia466edj.pdf
SIA466EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 25A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 1 V
auf Bestellung 7578 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
19+ 1.37 EUR
100+ 1.05 EUR
500+ 0.83 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SQ7414AEN-T1-GE3 sq7414aen.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
SQM120P06-07L_GE3 sqm120p06-07l.pdf
SQM120P06-07L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14280 pF @ 25 V
Produkt ist nicht verfügbar
SQM100N10-10_GE3 sqm100n1.pdf
SQM100N10-10_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+4.35 EUR
Mindestbestellmenge: 800
SIS407ADN-T1-GE3 sis407adn.pdf
SIS407ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
Produkt ist nicht verfügbar
SIP2100DY-T1-GE3 sip2100.pdf
SIP2100DY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPOLR 3.8-5.5V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3.8V ~ 5.5V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 3.8V ~ 5.5V
Supplier Device Package: 8-SOIC
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.44 EUR
Mindestbestellmenge: 2500
SIS407ADN-T1-GE3 sis407adn.pdf
SIS407ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 90 108 109 110 111 112 113 114 115 116 117 118 126 144 162 180 183  [ Nächste Seite >> ]