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SIP32419DN-T1-GE4 SIP32419DN-T1-GE4 Vishay Siliconix sip32429.pdf Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
auf Bestellung 8155 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.5 EUR
10+ 5.85 EUR
25+ 5.52 EUR
100+ 4.7 EUR
250+ 4.42 EUR
500+ 3.86 EUR
1000+ 3.2 EUR
Mindestbestellmenge: 4
SIP32468DB-T2-GE1 SIP32468DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32467DB-T2-GE1 SIP32467DB-T2-GE1 Vishay Siliconix sip32467.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
SI3865DDV-T1-GE3 SI3865DDV-T1-GE3 Vishay Siliconix Si3865DDV.pdf Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.43 EUR
6000+ 0.41 EUR
9000+ 0.38 EUR
30000+ 0.37 EUR
Mindestbestellmenge: 3000
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 Vishay Siliconix si4403cd.pdf Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.69 EUR
5000+ 0.65 EUR
12500+ 0.61 EUR
Mindestbestellmenge: 2500
SUD50P10-43L-GE3 SUD50P10-43L-GE3 Vishay Siliconix sud50p10.pdf Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+2.76 EUR
Mindestbestellmenge: 2000
SUP50N10-21P-GE3 SUP50N10-21P-GE3 Vishay Siliconix sup50n1021p.pdf Description: MOSFET N-CH 100V 50A TO220AB
Produkt ist nicht verfügbar
SIP12107DB SIP12107DB Vishay Siliconix 49994_pl0427.pdf Description: EVAL BOARD BUCK REG 5V 3A
Packaging: Box
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12107
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIP12108DB SIP12108DB Vishay Siliconix sip12108.pdf Description: EVAL BOARD BUCK REG ADJ 5A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12108
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC413DB SIC413DB Vishay Siliconix sic413.pdf Description: EVAL BOARD BUCK REG 26V 4A
Produkt ist nicht verfügbar
SIC401DB SIC401DB Vishay Siliconix sic401abcd.pdf Description: EVAL BOARD BUCK REG ADJ 15A
Produkt ist nicht verfügbar
SIC402DB SIC402DB Vishay Siliconix 49994_pl0427.pdf Description: EVAL BOARD BUCK REG ADJ 10A
Produkt ist nicht verfügbar
SIC403DB SIC403DB Vishay Siliconix sic401.pdf Description: EVAL BOARD BUCK REG ADJ 6A
Produkt ist nicht verfügbar
SI3865DDV-T1-GE3 SI3865DDV-T1-GE3 Vishay Siliconix Si3865DDV.pdf Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 92064 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SUD06N10-225L-GE3 SUD06N10-225L-GE3 Vishay Siliconix sud06n10-225l-ge3.pdf Description: MOSFET N-CH 100V 6.5A TO252AA
Produkt ist nicht verfügbar
SIA923AEDJ-T1-GE3 SIA923AEDJ-T1-GE3 Vishay Siliconix SiA923AEDJ.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.5 EUR
6000+ 0.48 EUR
9000+ 0.44 EUR
Mindestbestellmenge: 3000
SIA446DJ-T1-GE3 SIA446DJ-T1-GE3 Vishay Siliconix sia446dj.pdf Description: MOSFET N-CH 150V 7.7A PPAK SC70
Produkt ist nicht verfügbar
SIA537EDJ-T1-GE3 SIA537EDJ-T1-GE3 Vishay Siliconix sia537edj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SI7121ADN-T1-GE3 SI7121ADN-T1-GE3 Vishay Siliconix si7121adn.pdf Description: MOSFET P-CH 30V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.55 EUR
6000+ 0.52 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 3000
SI8851EDB-T2-E1 SI8851EDB-T2-E1 Vishay Siliconix si8851edb.pdf Description: MOSFET P-CH 20V PWR MICRO FOOT
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 SI3421DV-T1-GE3 Vishay Siliconix si3421dv.pdf Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.4 EUR
6000+ 0.38 EUR
9000+ 0.35 EUR
Mindestbestellmenge: 3000
SIA923AEDJ-T1-GE3 SIA923AEDJ-T1-GE3 Vishay Siliconix SiA923AEDJ.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 28453 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
21+ 1.27 EUR
100+ 0.89 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
SIA446DJ-T1-GE3 SIA446DJ-T1-GE3 Vishay Siliconix sia446dj.pdf Description: MOSFET N-CH 150V 7.7A PPAK SC70
auf Bestellung 1554 Stücke:
Lieferzeit 21-28 Tag (e)
SIA537EDJ-T1-GE3 SIA537EDJ-T1-GE3 Vishay Siliconix sia537edj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 2150 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
21+ 1.3 EUR
100+ 0.9 EUR
500+ 0.7 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 17
SI7121ADN-T1-GE3 SI7121ADN-T1-GE3 Vishay Siliconix si7121adn.pdf Description: MOSFET P-CH 30V 12A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 9398 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
21+ 1.25 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 19
SI8851EDB-T2-E1 SI8851EDB-T2-E1 Vishay Siliconix si8851edb.pdf Description: MOSFET P-CH 20V PWR MICRO FOOT
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 SI3421DV-T1-GE3 Vishay Siliconix si3421dv.pdf Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
auf Bestellung 17314 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
26+ 1.02 EUR
100+ 0.71 EUR
500+ 0.55 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 22
SIP4282ADNP2-T1GE4 SIP4282ADNP2-T1GE4 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Obsolete
Produkt ist nicht verfügbar
SIP4282ADNP3-T1GE4 SIP4282ADNP3-T1GE4 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
auf Bestellung 13035 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
19+ 1.38 EUR
25+ 1.3 EUR
100+ 1.06 EUR
250+ 0.98 EUR
500+ 0.84 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
SIP4282DNP3-T1GE4 SIP4282DNP3-T1GE4 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: UVLO
Part Status: Active
auf Bestellung 5895 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.56 EUR
19+ 1.38 EUR
25+ 1.3 EUR
100+ 1.06 EUR
250+ 0.98 EUR
500+ 0.84 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
SIP4282DVP3-T1GE3 SIP4282DVP3-T1GE3 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Fault Protection: UVLO
Part Status: Active
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.29 EUR
25+ 1.21 EUR
Mindestbestellmenge: 18
SIP4282ADVP3-T1GE3 SIP4282ADVP3-T1GE3 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7157DP-T1-GE3 SI7157DP-T1-GE3 Vishay Siliconix si7157dp.pdf Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V
Produkt ist nicht verfügbar
SIRA16DP-T1-GE3 SIRA16DP-T1-GE3 Vishay Siliconix powerpak.pdf Description: MOSFET N-CH 30V D-S PPAK SO-8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SISA16DN-T1-GE3 SISA16DN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 16A PPAK1212-8
Produkt ist nicht verfügbar
SIZ914DT-T1-GE3 SIZ914DT-T1-GE3 Vishay Siliconix siz914dt.pdf Description: MOSFET 2N-CH 30V 16A PWRPAIR
Produkt ist nicht verfügbar
SIRA16DP-T1-GE3 SIRA16DP-T1-GE3 Vishay Siliconix powerpak.pdf Description: MOSFET N-CH 30V D-S PPAK SO-8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SISA16DN-T1-GE3 SISA16DN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 16A PPAK1212-8
Produkt ist nicht verfügbar
SIZ914DT-T1-GE3 SIZ914DT-T1-GE3 Vishay Siliconix siz914dt.pdf Description: MOSFET 2N-CH 30V 16A PWRPAIR
Produkt ist nicht verfügbar
SIR818DP-T1-GE3 SIR818DP-T1-GE3 Vishay Siliconix sir818dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
auf Bestellung 3048 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SIR330DP-T1-GE3 SIR330DP-T1-GE3 Vishay Siliconix sir330dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
SIRA34DP-T1-GE3 SIRA34DP-T1-GE3 Vishay Siliconix sira34dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
auf Bestellung 2311 Stücke:
Lieferzeit 21-28 Tag (e)
SISA12ADN-T1-GE3 SISA12ADN-T1-GE3 Vishay Siliconix sisa12adn.pdf Description: MOSFET N-CH 30V 25A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
auf Bestellung 20068 Stücke:
Lieferzeit 21-28 Tag (e)
13+2 EUR
15+ 1.73 EUR
100+ 1.2 EUR
500+ 1 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 13
SISA18ADN-T1-GE3 SISA18ADN-T1-GE3 Vishay Siliconix sisa18adn.pdf Description: MOSFET N-CH 30V 38.3A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 14481 Stücke:
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18+1.48 EUR
21+ 1.25 EUR
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500+ 0.68 EUR
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SIRA34DP-T1-GE3 SIRA34DP-T1-GE3 Vishay Siliconix sira34dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
auf Bestellung 2311 Stücke:
Lieferzeit 21-28 Tag (e)
SIP12109DMP-T1-GE4 SIP12109DMP-T1-GE4 Vishay Siliconix sip12109.pdf Description: IC REG BUCK ADJ 4A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.89 EUR
Mindestbestellmenge: 2500
SIP12109DMP-T1-GE4 SIP12109DMP-T1-GE4 Vishay Siliconix sip12109.pdf Description: IC REG BUCK ADJ 4A 16MLP
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.13 EUR
10+ 3.71 EUR
25+ 3.5 EUR
100+ 2.98 EUR
250+ 2.8 EUR
500+ 2.45 EUR
1000+ 2.03 EUR
Mindestbestellmenge: 7
SUD42N03-3M9P-GE3 SUD42N03-3M9P-GE3 Vishay Siliconix SUD42N03-3m9P.pdf Description: MOSFET N-CH 30V 42A TO252
Produkt ist nicht verfügbar
SIP32101DB-T1-GE1 SIP32101DB-T1-GE1 Vishay Siliconix sip32101.pdf Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.35 EUR
Mindestbestellmenge: 3000
SIP32101DB-T1-GE1 SIP32101DB-T1-GE1 Vishay Siliconix sip32101.pdf Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 7342 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.17 EUR
10+ 2.85 EUR
25+ 2.71 EUR
100+ 2.22 EUR
250+ 2.08 EUR
500+ 1.84 EUR
1000+ 1.45 EUR
Mindestbestellmenge: 9
SUP90N06-6M0P-E3 SUP90N06-6M0P-E3 Vishay Siliconix sup90n06.pdf Description: MOSFET N-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V
auf Bestellung 581 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.25 EUR
50+ 5.75 EUR
100+ 4.93 EUR
500+ 4.38 EUR
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SQ2319ES-T1-GE3 SQ2319ES-T1-GE3 Vishay Siliconix sq2319es.pdf Description: MOSFET P-CH 40V 4.6A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
SI9112DY-E3 SI9112DY-E3 Vishay Siliconix si9112.pdf Description: IC REG CTRLR MULT TOP 14SOIC
Produkt ist nicht verfügbar
SI2309CDS-T1-E3 SI2309CDS-T1-E3 Vishay Siliconix si2309cd.pdf Description: MOSFET P-CH 60V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
auf Bestellung 17813 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SI1539CDL-T1-GE3 SI1539CDL-T1-GE3 Vishay Siliconix si1539cdl.pdf Description: MOSFET N/P-CH 30V 0.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 1889 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
35+ 0.76 EUR
100+ 0.46 EUR
500+ 0.42 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 27
2N7002-T1-GE3 2N7002-T1-GE3 Vishay Siliconix 70226.pdf Description: MOSFET N-CH 60V 115MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 6230 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.96 EUR
32+ 0.82 EUR
100+ 0.57 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
SIA936EDJ-T1-GE3 SIA936EDJ-T1-GE3 Vishay Siliconix SiA936EDJ.pdf Description: MOSFET 2N-CH 20V 4.5A SC-70
Produkt ist nicht verfügbar
SIA936EDJ-T1-GE3 SIA936EDJ-T1-GE3 Vishay Siliconix SiA936EDJ.pdf Description: MOSFET 2N-CH 20V 4.5A SC-70
Produkt ist nicht verfügbar
SIA936EDJ-T1-GE3 SIA936EDJ-T1-GE3 Vishay Siliconix SiA936EDJ.pdf Description: MOSFET 2N-CH 20V 4.5A SC-70
Produkt ist nicht verfügbar
SIHA12N60E-E3 SIHA12N60E-E3 Vishay Siliconix siha12n60e.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 923 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.82 EUR
50+ 4.69 EUR
100+ 3.86 EUR
500+ 3.26 EUR
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SIP32419DN-T1-GE4 sip32429.pdf
SIP32419DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 10DFN
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 56mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Active
auf Bestellung 8155 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.5 EUR
10+ 5.85 EUR
25+ 5.52 EUR
100+ 4.7 EUR
250+ 4.42 EUR
500+ 3.86 EUR
1000+ 3.2 EUR
Mindestbestellmenge: 4
SIP32468DB-T2-GE1 sip32467.pdf
SIP32468DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
SIP32467DB-T2-GE1 sip32467.pdf
SIP32467DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 9 Stücke:
Lieferzeit 21-28 Tag (e)
SI3865DDV-T1-GE3 Si3865DDV.pdf
SI3865DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 84000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.43 EUR
6000+ 0.41 EUR
9000+ 0.38 EUR
30000+ 0.37 EUR
Mindestbestellmenge: 3000
SI4403CDY-T1-GE3 si4403cd.pdf
SI4403CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.69 EUR
5000+ 0.65 EUR
12500+ 0.61 EUR
Mindestbestellmenge: 2500
SUD50P10-43L-GE3 sud50p10.pdf
SUD50P10-43L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+2.76 EUR
Mindestbestellmenge: 2000
SUP50N10-21P-GE3 sup50n1021p.pdf
SUP50N10-21P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO220AB
Produkt ist nicht verfügbar
SIP12107DB 49994_pl0427.pdf
SIP12107DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG 5V 3A
Packaging: Box
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12107
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIP12108DB sip12108.pdf
SIP12108DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 5A
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 5A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12108
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC413DB sic413.pdf
SIC413DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG 26V 4A
Produkt ist nicht verfügbar
SIC401DB sic401abcd.pdf
SIC401DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 15A
Produkt ist nicht verfügbar
SIC402DB 49994_pl0427.pdf
SIC402DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 10A
Produkt ist nicht verfügbar
SIC403DB sic401.pdf
SIC403DB
Hersteller: Vishay Siliconix
Description: EVAL BOARD BUCK REG ADJ 6A
Produkt ist nicht verfügbar
SI3865DDV-T1-GE3 Si3865DDV.pdf
SI3865DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6TSOP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Voltage - Load: 1.5V ~ 12V
Current - Output (Max): 2.8A
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 92064 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SUD06N10-225L-GE3 sud06n10-225l-ge3.pdf
SUD06N10-225L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252AA
Produkt ist nicht verfügbar
SIA923AEDJ-T1-GE3 SiA923AEDJ.pdf
SIA923AEDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.5 EUR
6000+ 0.48 EUR
9000+ 0.44 EUR
Mindestbestellmenge: 3000
SIA446DJ-T1-GE3 sia446dj.pdf
SIA446DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
Produkt ist nicht verfügbar
SIA537EDJ-T1-GE3 sia537edj.pdf
SIA537EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Produkt ist nicht verfügbar
SI7121ADN-T1-GE3 si7121adn.pdf
SI7121ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.55 EUR
6000+ 0.52 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 3000
SI8851EDB-T2-E1 si8851edb.pdf
SI8851EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V PWR MICRO FOOT
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 si3421dv.pdf
SI3421DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.4 EUR
6000+ 0.38 EUR
9000+ 0.35 EUR
Mindestbestellmenge: 3000
SIA923AEDJ-T1-GE3 SiA923AEDJ.pdf
SIA923AEDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Rds On (Max) @ Id, Vgs: 54mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 28453 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.51 EUR
21+ 1.27 EUR
100+ 0.89 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
SIA446DJ-T1-GE3 sia446dj.pdf
SIA446DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7.7A PPAK SC70
auf Bestellung 1554 Stücke:
Lieferzeit 21-28 Tag (e)
SIA537EDJ-T1-GE3 sia537edj.pdf
SIA537EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 7.8W
Drain to Source Voltage (Vdss): 12V, 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
auf Bestellung 2150 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
21+ 1.3 EUR
100+ 0.9 EUR
500+ 0.7 EUR
1000+ 0.57 EUR
Mindestbestellmenge: 17
SI7121ADN-T1-GE3 si7121adn.pdf
SI7121ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
auf Bestellung 9398 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
21+ 1.25 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 19
SI8851EDB-T2-E1 si8851edb.pdf
SI8851EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V PWR MICRO FOOT
Produkt ist nicht verfügbar
SI3421DV-T1-GE3 si3421dv.pdf
SI3421DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 15 V
auf Bestellung 17314 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.2 EUR
26+ 1.02 EUR
100+ 0.71 EUR
500+ 0.55 EUR
1000+ 0.45 EUR
Mindestbestellmenge: 22
SIP4282ADNP2-T1GE4 sip4282.pdf
SIP4282ADNP2-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Obsolete
Produkt ist nicht verfügbar
SIP4282ADNP3-T1GE4 sip4282.pdf
SIP4282ADNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Part Status: Active
auf Bestellung 13035 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
19+ 1.38 EUR
25+ 1.3 EUR
100+ 1.06 EUR
250+ 0.98 EUR
500+ 0.84 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
SIP4282DNP3-T1GE4 sip4282.pdf
SIP4282DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: UVLO
Part Status: Active
auf Bestellung 5895 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.56 EUR
19+ 1.38 EUR
25+ 1.3 EUR
100+ 1.06 EUR
250+ 0.98 EUR
500+ 0.84 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
SIP4282DVP3-T1GE3 sip4282.pdf
SIP4282DVP3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Fault Protection: UVLO
Part Status: Active
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.29 EUR
25+ 1.21 EUR
Mindestbestellmenge: 18
SIP4282ADVP3-T1GE3 sip4282.pdf
SIP4282ADVP3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 350mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7157DP-T1-GE3 si7157dp.pdf
SI7157DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V
Produkt ist nicht verfügbar
SIRA16DP-T1-GE3 powerpak.pdf
SIRA16DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V D-S PPAK SO-8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SISA16DN-T1-GE3
SISA16DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Produkt ist nicht verfügbar
SIZ914DT-T1-GE3 siz914dt.pdf
SIZ914DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A PWRPAIR
Produkt ist nicht verfügbar
SIRA16DP-T1-GE3 powerpak.pdf
SIRA16DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V D-S PPAK SO-8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SISA16DN-T1-GE3
SISA16DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Produkt ist nicht verfügbar
SIZ914DT-T1-GE3 siz914dt.pdf
SIZ914DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A PWRPAIR
Produkt ist nicht verfügbar
SIR818DP-T1-GE3 sir818dp.pdf
SIR818DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
auf Bestellung 3048 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SIR330DP-T1-GE3 sir330dp.pdf
SIR330DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
SIRA34DP-T1-GE3 sira34dp.pdf
SIRA34DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
auf Bestellung 2311 Stücke:
Lieferzeit 21-28 Tag (e)
SISA12ADN-T1-GE3 sisa12adn.pdf
SISA12ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
auf Bestellung 20068 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2 EUR
15+ 1.73 EUR
100+ 1.2 EUR
500+ 1 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 13
SISA18ADN-T1-GE3 sisa18adn.pdf
SISA18ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 14481 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.25 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 18
SIRA34DP-T1-GE3 sira34dp.pdf
SIRA34DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
auf Bestellung 2311 Stücke:
Lieferzeit 21-28 Tag (e)
SIP12109DMP-T1-GE4 sip12109.pdf
SIP12109DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 4A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.89 EUR
Mindestbestellmenge: 2500
SIP12109DMP-T1-GE4 sip12109.pdf
SIP12109DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 4A 16MLP
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1.5MHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.13 EUR
10+ 3.71 EUR
25+ 3.5 EUR
100+ 2.98 EUR
250+ 2.8 EUR
500+ 2.45 EUR
1000+ 2.03 EUR
Mindestbestellmenge: 7
SUD42N03-3M9P-GE3 SUD42N03-3m9P.pdf
SUD42N03-3M9P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 42A TO252
Produkt ist nicht verfügbar
SIP32101DB-T1-GE1 sip32101.pdf
SIP32101DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.35 EUR
Mindestbestellmenge: 3000
SIP32101DB-T1-GE1 sip32101.pdf
SIP32101DB-T1-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 12WCSP
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 12-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 6.5mOhm
Voltage - Load: 2.3V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-WCSP (1.71x1.31)
Part Status: Active
auf Bestellung 7342 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.17 EUR
10+ 2.85 EUR
25+ 2.71 EUR
100+ 2.22 EUR
250+ 2.08 EUR
500+ 1.84 EUR
1000+ 1.45 EUR
Mindestbestellmenge: 9
SUP90N06-6M0P-E3 sup90n06.pdf
SUP90N06-6M0P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V
auf Bestellung 581 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.25 EUR
50+ 5.75 EUR
100+ 4.93 EUR
500+ 4.38 EUR
Mindestbestellmenge: 4
SQ2319ES-T1-GE3 sq2319es.pdf
SQ2319ES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A TO-236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
SI9112DY-E3 si9112.pdf
SI9112DY-E3
Hersteller: Vishay Siliconix
Description: IC REG CTRLR MULT TOP 14SOIC
Produkt ist nicht verfügbar
SI2309CDS-T1-E3 si2309cd.pdf
SI2309CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
auf Bestellung 17813 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
24+ 1.09 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SI1539CDL-T1-GE3 si1539cdl.pdf
SI1539CDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 0.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 340mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
auf Bestellung 1889 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
27+0.99 EUR
35+ 0.76 EUR
100+ 0.46 EUR
500+ 0.42 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 27
2N7002-T1-GE3 70226.pdf
2N7002-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 115MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 6230 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
32+ 0.82 EUR
100+ 0.57 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
SIA936EDJ-T1-GE3 SiA936EDJ.pdf
SIA936EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC-70
Produkt ist nicht verfügbar
SIA936EDJ-T1-GE3 SiA936EDJ.pdf
SIA936EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC-70
Produkt ist nicht verfügbar
SIA936EDJ-T1-GE3 SiA936EDJ.pdf
SIA936EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC-70
Produkt ist nicht verfügbar
SIHA12N60E-E3 siha12n60e.pdf
SIHA12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 923 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.82 EUR
50+ 4.69 EUR
100+ 3.86 EUR
500+ 3.26 EUR
Mindestbestellmenge: 5
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