Die Produkte vishay siliconix

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SIHB105N60EF-GE3 SIHB105N60EF-GE3 sihb105n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 29A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 5838 Stücke
Lieferzeit 21-28 Tag (e)
SIHG105N60EF-GE3 SIHG105N60EF-GE3 sihg105n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
SQJQ148ER-T1_GE3 SQJQ148ER-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHS90N65E-GE3 SIHS90N65E-GE3 sihs90n65e.pdf Vishay Siliconix Description: E SERIES POWER MOSFET SUPER-247,
Gate Charge (Qg) (Max) @ Vgs: 591nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11826pF @ 100V
Vgs (Max): ±30V
auf Bestellung 480 Stücke
Lieferzeit 21-28 Tag (e)
SISS54DN-T1-GE3 SISS54DN-T1-GE3 Vishay Siliconix Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP15N80AEF-GE3 SIHP15N80AEF-GE3 Vishay Siliconix Description: EF SERIES POWER MOSFET WITH FAST
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA929DJ-T1-GE3 SIA929DJ-T1-GE3 sia929dj.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 4.5A SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ20PBF-BE3 IRFZ20PBF-BE3 sihfz20.pdf Vishay Siliconix Description: MOSFET N-CH 50V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 677 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.97 EUR
10+ 4.48 EUR
100+ 3.6 EUR
500+ 2.96 EUR
SQ3461EV-T1_GE3 SQ3461EV-T1_GE3 sq3461ev.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Base Part Number: SQ3461
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5886 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIHB053N60E-GE3 SIHB053N60E-GE3 sihb053n60e.pdf Vishay Siliconix Description: E SERIES POWER MOSFET D2PAK (TO-
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3722pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1302DL-T1-BE3 SI1302DL-T1-BE3 71249.pdf Vishay Siliconix Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 600MA SC70-3
Part Status: Active
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
SIHF9540PBF Vishay Siliconix Description: MOSFET P-CH 100V TO-220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Base Part Number: SIHF9540
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH114ADN-T1-GE3 SISH114ADN-T1-GE3 sish114ad.pdf Vishay Siliconix Description: MOSFET N-CH 30V 18A/35A PPAK
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISH114
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 18A/35A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH114
auf Bestellung 6050 Stücke
Lieferzeit 21-28 Tag (e)
SIHD3N50D-BE3 SIHD3N50D-BE3 Vishay Siliconix Description: MOSFET N-CH 500V 3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 2963 Stücke
Lieferzeit 21-28 Tag (e)
SIP12117DMP-T1-GE4 SIP12117DMP-T1-GE4 sip12117.pdf Vishay Siliconix Description: IC REG BUCK ADJUSTABLE 3A 10DFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 10-DFN (3x3)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC REG BUCK ADJ 3A SYNC 10DFN
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 10-DFN (3x3)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 600kHz
Output Configuration: Positive
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
SIS176LDN-T1-GE3 SIS176LDN-T1-GE3 sis176ldn.pdf Vishay Siliconix Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 35V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 35V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5958 Stücke
Lieferzeit 21-28 Tag (e)
SUM70030M-GE3 SUM70030M-GE3 sum70030m.pdf Vishay Siliconix Description: MOSFET N-CH 100V 150A TO263-7
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM70042E-GE3 SUM70042E-GE3 Vishay Siliconix Description: N-CHANNEL 100-V (D-S) MOSFET D2P
Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF610STRLPBF IRF610STRLPBF sih610s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 3.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SQJ488EP-T1_BE3 SQJ488EP-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 100V 42A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ488EP-T2_BE3 SQJ488EP-T2_BE3 Vishay Siliconix Description: MOSFET N-CH 100V 42A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQS401EN-T1_BE3 SQS401EN-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 40V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQS401
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
auf Bestellung 3025 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 40V 16A PPAK1212-8
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SQS401
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SQ2310ES-T1_BE3 SQ2310ES-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 20V 6A SOT23-3
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR680LDP-T1-RE3 SIR680LDP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 80V 31.8A/130A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.8A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7250 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJ186DP-T1-GE3 SIJ186DP-T1-GE3 sij186dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 23A/79.4A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ186
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 23A/79.4A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ186
auf Bestellung 4888 Stücke
Lieferzeit 21-28 Tag (e)
SUM40014M-GE3 SUM40014M-GE3 sum40014m.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200A TO263-7
Vgs (Max): ±20V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 15780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.99Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 40V 200A TO263-7
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.99Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
auf Bestellung 37 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SIDR170DP-T1-RE3 SIDR170DP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 100V 23.2A/95A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ256DT-T1-GE3 SIZ256DT-T1-GE3 siz256dt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Manufacturer: Vishay Siliconix
Base Part Number: SIZ256
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SQ2319ADS-T1_BE3 SQ2319ADS-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 40V 4.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR890DP-T1-GE3 SIR890DP-T1-GE3 sir890dp.pdf Vishay Siliconix Description: MOSFET N SO-8
Manufacturer: WEC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2747pF @ 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR890
auf Bestellung 425 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SIC639ACD-T1-GE3 SIC639ACD-T1-GE3 sic639.pdf Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
auf Bestellung 2988 Stücke
Lieferzeit 21-28 Tag (e)
SIC533CD-T1-GE3 SIC533CD-T1-GE3 sic533.pdf Vishay Siliconix Description: IC POWER STAGE 35A POWERPAK MLP4
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 40A
Current - Output / Channel: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 3.7 EUR
Vishay Siliconix Description: IC POWER STAGE 35A POWERPAK MLP4
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 40A
Current - Output / Channel: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.02 EUR
10+ 6.31 EUR
25+ 5.95 EUR
100+ 5.07 EUR
250+ 4.76 EUR
500+ 4.16 EUR
1000+ 3.7 EUR
SQJQ144AE-T1_GE3 sqjq144ae.pdf Vishay Siliconix Description: MOSFET N-CH 40V 575A PPAK 8 X 8
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQJQ144
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 600W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9020pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
auf Bestellung 3784 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
SIHFL110TR-BE3 SIHFL110TR-BE3 sihfl110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V 1.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
auf Bestellung 338 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.66 EUR
19+ 1.41 EUR
100+ 1.06 EUR
SISHA04DN-T1-GE3 SISHA04DN-T1-GE3 sisha04dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 30.9A/40A PPAK
Base Part Number: SISHA04
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4490 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
IRFBF20PBF-BE3 IRFBF20PBF-BE3 91120.pdf Vishay Siliconix Description: MOSFET N-CH 900V 1.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 975 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.06 EUR
10+ 5.44 EUR
100+ 4.37 EUR
500+ 3.59 EUR
SQ3495EV-T1_GE3 Vishay Siliconix Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
SQ4153EY-T1_GE3 SQ4153EY-T1_GE3 sq4153ey.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4153
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Vgs (Max): ±8V
Base Part Number: SQ4153
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
SUD50N03-12P-GE3 SUD50N03-12P-GE3 SUD50N03-12P-GE3.pdf Vishay Siliconix Description: MOSFET N-CH 30V 16.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB24N80AE-GE3 SIHB24N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 925 Stücke
Lieferzeit 21-28 Tag (e)
SQ2318BES-T1_GE3 SQ2318BES-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG612EEY-T1-GE4 DG612EEY-T1-GE4 dg611e.pdf Vishay Siliconix Description: IC ANALOG SWITCH 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2414 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.98 EUR
10+ 3.55 EUR
25+ 3.37 EUR
100+ 2.77 EUR
250+ 2.59 EUR
500+ 2.29 EUR
1000+ 1.88 EUR
SI7454FDP-T1-RE3 SI7454FDP-T1-RE3 Vishay Siliconix Description: N-CHANNEL 100-V (D-S) MOSFET POW
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
auf Bestellung 6010 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
2N5116 alucapsreach.pdf Vishay Siliconix Description: JFET P-CH 30V TO-18
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1822 Stücke - Preis und Lieferfrist anzeigen
SIS782DN-T1-GE3 SIS782DN-T1-GE3 sis782dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 41W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2310ES-T1_BE3 SQ2310ES-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ1922AEEH-T1_GE3 SQ1922AEEH-T1_GE3 sq1922aeeh.pdf Vishay Siliconix Description: MOSFET N-CH DUAL 20V .85A SOT-36
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 1.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH DUAL 20V .85A SOT-36
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 1.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
auf Bestellung 555 Stücke
Lieferzeit 21-28 Tag (e)
SIC638ACD-T1-GE3 SIC638ACD-T1-GE3 sic638.pdf Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIC638
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Manufacturer: Vishay Siliconix
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIC638
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
auf Bestellung 2919 Stücke
Lieferzeit 21-28 Tag (e)
SISH402DN-T1-GE3 SISH402DN-T1-GE3 sish402dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 19A/35A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH402
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 19A/35A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH402
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
DG612EEQ-T1-GE3 DG612EEQ-T1-GE3 dg611e.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 115Ohm
Channel-to-Channel Matching (ΔRon): 600mOhm
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Switch Time (Ton, Toff) (Max): 50ns, 35ns
-3db Bandwidth: 1GHz
Charge Injection: 1.4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -74dB @ 10MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Base Part Number: DG612
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG612EEY-T1-GE3 DG612EEY-T1-GE3 dg611e.pdf Vishay Siliconix Description: IC ANALOG SWITCH 16SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 115Ohm
Channel-to-Channel Matching (ΔRon): 600mOhm
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Switch Time (Ton, Toff) (Max): 50ns, 35ns
-3db Bandwidth: 1GHz
Charge Injection: 1.4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -74dB @ 10MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG612
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ112E-T1_GE3 SQJQ112E-T1_GE3 sqjq112e.pdf Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 600W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15945pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 272nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 1972 Stücke
Lieferzeit 21-28 Tag (e)
SIC772CD-T1-GE3 SIC772CD-T1-GE3 sic772cd.pdf Vishay Siliconix Description: IC MOSFET DRIVER N-CH 40MLP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Obsolete
Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: DrMOS
Current - Output / Channel: 40A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection: Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: Out of Bounds
Supplier Device Package: PowerPAK® MLP66-40
Base Part Number: SIC772
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ422EP-T1_BE3 SQJ422EP-T1_BE3 sqj422ep.pdf Vishay Siliconix Description: MOSFET N-CH 40V 75A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Base Part Number: SQJ422
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ254DT-T1-GE3 SIZ254DT-T1-GE3 siz254dt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 4400 Stücke
Lieferzeit 21-28 Tag (e)
DG418LEDY-GE3 DG418LEDY-GE3 Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG418LEDY-T1-GE3 DG418LEDY-T1-GE3 Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA42EP-T1_GE3 SQJA42EP-T1_GE3 sqja42ep.pdf Vishay Siliconix Description: MOSFET N-CH 40V 20A PPAK SO-8
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Base Part Number: SQJA42
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 20A PPAK SO-8
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA42
auf Bestellung 2747 Stücke
Lieferzeit 21-28 Tag (e)
IRFR214PBF-BE3 IRFR214PBF-BE3 sihfr214.pdf Vishay Siliconix Description: MOSFET N-CH 250V 2.2A DPAK
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
auf Bestellung 2820 Stücke
Lieferzeit 21-28 Tag (e)
SQJ411EP-T1_GE3 SQJ411EP-T1_GE3 sqj411ep.pdf Vishay Siliconix Description: MOSFET P-CH 12V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ411
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7110DN-T1-GE3 SI7110DN-T1-GE3 si7110dn.pdf Vishay Siliconix Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Base Part Number: SI7110
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 42000 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Base Part Number: SI7110
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 42000 Stücke - Preis und Lieferfrist anzeigen
SQJ142EP-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
Power Dissipation (Max): 191W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ500AEP-T1_BE3 SQJ500AEP-T1_BE3 Vishay Siliconix Description: MOSFET N/P CHAN 40V SO8L DUAL
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR104AEP-T1-RE3 SIDR104AEP-T1-RE3 sidr104aep.pdf Vishay Siliconix Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
auf Bestellung 35 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.88 EUR
10+ 7.08 EUR
SIDR220DP-T1-GE3 sidr220dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 87.7A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR220EP-T1-RE3 SIDR220EP-T1-RE3 sidr220ep.pdf Vishay Siliconix Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR402EP-T1-RE3 SIDR402EP-T1-RE3 sidr402ep.pdf Vishay Siliconix Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR608EP-T1-RE3 SIDR608EP-T1-RE3 sidr608ep.pdf Vishay Siliconix Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR626LDP-T1-RE3 SIDR626LDP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR626LEP-T1-RE3 SIDR626LEP-T1-RE3 sidr626lep.pdf Vishay Siliconix Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB105N60EF-GE3 sihb105n60ef.pdf
SIHB105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 5838 Stücke
Lieferzeit 21-28 Tag (e)
SIHG105N60EF-GE3 sihg105n60ef.pdf
SIHG105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1500 Stücke - Preis und Lieferfrist anzeigen
SQJQ148ER-T1_GE3
SQJQ148ER-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 372A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 394W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHS90N65E-GE3 sihs90n65e.pdf
SIHS90N65E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET SUPER-247,
Gate Charge (Qg) (Max) @ Vgs: 591nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11826pF @ 100V
Vgs (Max): ±30V
auf Bestellung 480 Stücke
Lieferzeit 21-28 Tag (e)
SISS54DN-T1-GE3
SISS54DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP15N80AEF-GE3
SIHP15N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1128pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA929DJ-T1-GE3 sia929dj.pdf
SIA929DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.5A SC70-6
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ20PBF-BE3 sihfz20.pdf
IRFZ20PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 677 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.97 EUR
10+ 4.48 EUR
100+ 3.6 EUR
500+ 2.96 EUR
SQ3461EV-T1_GE3 sq3461ev.pdf
SQ3461EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 8A 6TSOP
Base Part Number: SQ3461
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIHB053N60E-GE3 sihb053n60e.pdf
SIHB053N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3722pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 54mOhm @ 26.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1302DL-T1-BE3 71249.pdf
SI1302DL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1302DL-T1-BE3 71249.pdf
SI1302DL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC70-3
Part Status: Active
Packaging: Cut Tape (CT)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 280mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
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Lieferzeit 21-28 Tag (e)
SIHF9540PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V TO-220AB
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Base Part Number: SIHF9540
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH114ADN-T1-GE3 sish114ad.pdf
SISH114ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/35A PPAK
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISH114
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
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SISH114ADN-T1-GE3 sish114ad.pdf
SISH114ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/35A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH114
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SIHD3N50D-BE3
SIHD3N50D-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 3A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
SIP12117DMP-T1-GE4 sip12117.pdf
SIP12117DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 3A 10DFN
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 10-DFN (3x3)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 600kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIP12117DMP-T1-GE4 sip12117.pdf
SIP12117DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A SYNC 10DFN
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 5.5V
Synchronous Rectifier: Yes
Supplier Device Package: 10-DFN (3x3)
Topology: Buck
Voltage - Input (Max): 15V
Frequency - Switching: 600kHz
Output Configuration: Positive
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SIS176LDN-T1-GE3 sis176ldn.pdf
SIS176LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 35V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIS176LDN-T1-GE3 sis176ldn.pdf
SIS176LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 35V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SUM70030M-GE3 sum70030m.pdf
SUM70030M-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263-7
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM70042E-GE3
SUM70042E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET D2P
Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF610STRLPBF sih610s.pdf
IRF610STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQJ488EP-T1_BE3
SQJ488EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 42A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ488EP-T2_BE3
SQJ488EP-T2_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 42A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQS401EN-T1_BE3
SQS401EN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQS401
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
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SQS401EN-T1_BE3
SQS401EN-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16A PPAK1212-8
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1875pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SQS401
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SQ2310ES-T1_BE3
SQ2310ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT23-3
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR680LDP-T1-RE3
SIR680LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 31.8A/130A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.8A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7250 pF @ 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJ186DP-T1-GE3 sij186dp.pdf
SIJ186DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23A/79.4A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ186
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SIJ186DP-T1-GE3 sij186dp.pdf
SIJ186DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23A/79.4A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 79.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 30V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ186
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SUM40014M-GE3 sum40014m.pdf
SUM40014M-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Vgs (Max): ±20V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 15780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.99Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 837 Stücke - Preis und Lieferfrist anzeigen
SUM40014M-GE3 sum40014m.pdf
SUM40014M-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 0.99Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15780 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
auf Bestellung 37 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SIDR170DP-T1-RE3
SIDR170DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ256DT-T1-GE3 siz256dt.pdf
SIZ256DT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Manufacturer: Vishay Siliconix
Base Part Number: SIZ256
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 31.8A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SQ2319ADS-T1_BE3
SQ2319ADS-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR890DP-T1-GE3 sir890dp.pdf
SIR890DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N SO-8
Manufacturer: WEC
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2747pF @ 10V
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR890
auf Bestellung 425 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798200 Stücke - Preis und Lieferfrist anzeigen
SIC639ACD-T1-GE3 sic639.pdf
SIC639ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2988 Stücke - Preis und Lieferfrist anzeigen
SIC639ACD-T1-GE3 sic639.pdf
SIC639ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
auf Bestellung 2988 Stücke
Lieferzeit 21-28 Tag (e)
SIC533CD-T1-GE3 sic533.pdf
SIC533CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 35A POWERPAK MLP4
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 40A
Current - Output / Channel: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
3000+ 3.7 EUR
SIC533CD-T1-GE3 sic533.pdf
SIC533CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 35A POWERPAK MLP4
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: POWERPAK® MLP4535-22L
Voltage - Load: 4.5V ~ 24V
Technology: Power MOSFET
Current - Peak Output: 40A
Current - Output / Channel: 35A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP4535-22L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
4+ 7.02 EUR
10+ 6.31 EUR
25+ 5.95 EUR
100+ 5.07 EUR
250+ 4.76 EUR
500+ 4.16 EUR
1000+ 3.7 EUR
SQJQ144AE-T1_GE3 sqjq144ae.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 575A PPAK 8 X 8
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQJQ144
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 600W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9020pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
auf Bestellung 3784 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
SIHFL110TR-BE3 sihfl110.pdf
SIHFL110TR-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 338 Stücke - Preis und Lieferfrist anzeigen
SIHFL110TR-BE3 sihfl110.pdf
SIHFL110TR-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
auf Bestellung 338 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.66 EUR
19+ 1.41 EUR
100+ 1.06 EUR
SISHA04DN-T1-GE3 sisha04dn.pdf
SISHA04DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30.9A/40A PPAK
Base Part Number: SISHA04
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4490 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
IRFBF20PBF-BE3 91120.pdf
IRFBF20PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 1.7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
auf Bestellung 975 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.06 EUR
10+ 5.44 EUR
100+ 4.37 EUR
500+ 3.59 EUR
SQ3495EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
SQ3495EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
SQ4153EY-T1_GE3 sq4153ey.pdf
SQ4153EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4153
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
SQ4153EY-T1_GE3 sq4153ey.pdf
SQ4153EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Vgs (Max): ±8V
Base Part Number: SQ4153
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
SUD50N03-12P-GE3 SUD50N03-12P-GE3.pdf
SUD50N03-12P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.8A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB24N80AE-GE3
SIHB24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 925 Stücke
Lieferzeit 21-28 Tag (e)
SQ2318BES-T1_GE3
SQ2318BES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG612EEY-T1-GE4 dg611e.pdf
DG612EEY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 2.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-SOIC
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2414 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.98 EUR
10+ 3.55 EUR
25+ 3.37 EUR
100+ 2.77 EUR
250+ 2.59 EUR
500+ 2.29 EUR
1000+ 1.88 EUR
SI7454FDP-T1-RE3
SI7454FDP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET POW
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
auf Bestellung 6010 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
2N5116 alucapsreach.pdf
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1822 Stücke - Preis und Lieferfrist anzeigen
SIS782DN-T1-GE3 sis782dn.pdf
SIS782DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 41W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2310ES-T1_BE3
SQ2310ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ1922AEEH-T1_GE3 sq1922aeeh.pdf
SQ1922AEEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH DUAL 20V .85A SOT-36
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 1.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 555 Stücke - Preis und Lieferfrist anzeigen
SQ1922AEEH-T1_GE3 sq1922aeeh.pdf
SQ1922AEEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH DUAL 20V .85A SOT-36
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Power - Max: 1.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SQ1922
auf Bestellung 555 Stücke
Lieferzeit 21-28 Tag (e)
SIC638ACD-T1-GE3 sic638.pdf
SIC638ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIC638
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2919 Stücke - Preis und Lieferfrist anzeigen
SIC638ACD-T1-GE3 sic638.pdf
SIC638ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
Manufacturer: Vishay Siliconix
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIC638
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
auf Bestellung 2919 Stücke
Lieferzeit 21-28 Tag (e)
SISH402DN-T1-GE3 sish402dn.pdf
SISH402DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/35A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH402
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
SISH402DN-T1-GE3 sish402dn.pdf
SISH402DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19A/35A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH402
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
DG612EEQ-T1-GE3 dg611e.pdf
DG612EEQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 115Ohm
Channel-to-Channel Matching (ΔRon): 600mOhm
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Switch Time (Ton, Toff) (Max): 50ns, 35ns
-3db Bandwidth: 1GHz
Charge Injection: 1.4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -74dB @ 10MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP
Base Part Number: DG612
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG612EEY-T1-GE3 dg611e.pdf
DG612EEY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 115Ohm
Channel-to-Channel Matching (ΔRon): 600mOhm
Voltage - Supply, Single (V+): 3V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 5V
Switch Time (Ton, Toff) (Max): 50ns, 35ns
-3db Bandwidth: 1GHz
Charge Injection: 1.4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -74dB @ 10MHz
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG612
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ112E-T1_GE3 sqjq112e.pdf
SQJQ112E-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Part Status: Active
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 600W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15945pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 272nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 1972 Stücke
Lieferzeit 21-28 Tag (e)
SIC772CD-T1-GE3 sic772cd.pdf
SIC772CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MOSFET DRIVER N-CH 40MLP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Obsolete
Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: DrMOS
Current - Output / Channel: 40A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: 4.5V ~ 24V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection: Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: Out of Bounds
Supplier Device Package: PowerPAK® MLP66-40
Base Part Number: SIC772
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ422EP-T1_BE3 sqj422ep.pdf
SQJ422EP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V
Power Dissipation (Max): 83W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Base Part Number: SQJ422
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ254DT-T1-GE3 siz254dt.pdf
SIZ254DT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 35V, 765pF @ 35V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 32.5A (Tc)
Drain to Source Voltage (Vdss): 70V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-PowerPair® (3.3x3.3)
auf Bestellung 4400 Stücke
Lieferzeit 21-28 Tag (e)
DG418LEDY-GE3
DG418LEDY-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Packaging: Tube
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG418LEDY-T1-GE3
DG418LEDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA42EP-T1_GE3 sqja42ep.pdf
SQJA42EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20A PPAK SO-8
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Base Part Number: SQJA42
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2747 Stücke - Preis und Lieferfrist anzeigen
SQJA42EP-T1_GE3 sqja42ep.pdf
SQJA42EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20A PPAK SO-8
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 27W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA42
auf Bestellung 2747 Stücke
Lieferzeit 21-28 Tag (e)
IRFR214PBF-BE3 sihfr214.pdf
IRFR214PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.2A DPAK
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.3A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
auf Bestellung 2820 Stücke
Lieferzeit 21-28 Tag (e)
SQJ411EP-T1_GE3 sqj411ep.pdf
SQJ411EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ411
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7110DN-T1-GE3 si7110dn.pdf
SI7110DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Base Part Number: SI7110
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 45000 Stücke - Preis und Lieferfrist anzeigen
SI7110DN-T1-GE3 si7110dn.pdf
SI7110DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.5A PPAK1212-8
Base Part Number: SI7110
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 21.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 45000 Stücke - Preis und Lieferfrist anzeigen
SQJ142EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
Power Dissipation (Max): 191W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ500AEP-T1_BE3
SQJ500AEP-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 38.3nC @ 10V, 45nC @ 10V
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 27mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1843pF @ 20V, 1628pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR104AEP-T1-RE3 sidr104aep.pdf
SIDR104AEP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35 Stücke - Preis und Lieferfrist anzeigen
SIDR104AEP-T1-RE3 sidr104aep.pdf
SIDR104AEP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.5W (Ta), 120W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 90.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
auf Bestellung 35 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.88 EUR
10+ 7.08 EUR
SIDR220DP-T1-GE3 sidr220dp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 87.7A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR220EP-T1-RE3 sidr220ep.pdf
SIDR220EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 415W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 92.8A (Ta), 415A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR402EP-T1-RE3 sidr402ep.pdf
SIDR402EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) 175C MOSFET
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65.2A (Ta), 291A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR608EP-T1-RE3 sidr608ep.pdf
SIDR608EP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 45 V (D-S) 175C MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Drain to Source Voltage (Vdss): 45 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR626LDP-T1-RE3
SIDR626LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR626LEP-T1-RE3 sidr626lep.pdf
SIDR626LEP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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