Die Produkte vishay siliconix

Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116  Nächste Seite >> ]
Foto Bezeichnung Tech.inf. Hersteller Beschreibung verfügbar/auf Bestellung
Preis
ohne MwSt
SIHG026N60EF-GE3 SIHG026N60EF-GE3 sihg026n60ef.pdf Vishay Siliconix Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 521W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS92DN-T1-GE3 SISS92DN-T1-GE3 siss92dn.pdf Vishay Siliconix Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 125V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS92
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJH112E-T1-GE3 SIJH112E-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 100V 23A/225A PPAK
Base Part Number: SIJH112
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 225A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
SIJA74DP-T1-GE3 SIJA74DP-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 40V 24A/81.2A PPAK
Base Part Number: SIJA74
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5825 Stücke - Preis und Lieferfrist anzeigen
SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 969 Stücke
Lieferzeit 21-28 Tag (e)
SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 21A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Package / Case: TO-247-3
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 sihfr1n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 600V 1.4A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
auf Bestellung 1869 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.06 EUR
10+ 3.65 EUR
100+ 2.93 EUR
500+ 2.41 EUR
1000+ 2.06 EUR
SQJ401EP-T1_GE3 SQJ401EP-T1_GE3 sqj401ep.pdf Vishay Siliconix Description: MOSFET P-CH 12V 32A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10015pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2666 Stücke - Preis und Lieferfrist anzeigen
SI1902DL-T1-BE3 SI1902DL-T1-BE3 si1902dl.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 0.66A SC-70-6
Power - Max: 270mW (Ta)
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7454FDP-T1-RE3 SI7454FDP-T1-RE3 Vishay Siliconix Description: N-CHANNEL 100-V (D-S) MOSFET POW
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 50V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6010 Stücke - Preis und Lieferfrist anzeigen
SIHFPS37N50A-GE3 SIHFPS37N50A-GE3 sihfps37n50a.pdf Vishay Siliconix Description: POWER MOSFET SUPER-247, 130 M @
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS05DN-T1-GE3 SISS05DN-T1-GE3 siss05dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 29.4A/108A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS05
auf Bestellung 10903 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIHH080N60E-T1-GE3 SIHH080N60E-T1-GE3 sihh080n60e.pdf Vishay Siliconix Description: E SERIES POWER MOSFET POWERPAK 8
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SIS178LDN-T1-GE3 SIS178LDN-T1-GE3 sis110dn.pdf Vishay Siliconix Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 45.3A (Tc)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 35V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 5860 Stücke
Lieferzeit 21-28 Tag (e)
SI1023CX-T1-GE3 SI1023CX-T1-GE3 si1023cx.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2P-CH 20V SC89-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
auf Bestellung 1092 Stücke
Lieferzeit 21-28 Tag (e)
SIHP21N60EF-BE3 SIHP21N60EF-BE3 Vishay Siliconix Description: MOSFET N-CH 600V 21A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 995 Stücke - Preis und Lieferfrist anzeigen
SIZF906BDT-T1-GE3 SIZF906BDT-T1-GE3 sizf906bdt.pdf Vishay Siliconix Description: DUAL N-CHANNEL 30 V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
FET Type: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 1.94 EUR
Vishay Siliconix Description: DUAL N-CHANNEL 30 V (D-S) MOSFET
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual), Schottky
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 5008 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.26 EUR
10+ 3.82 EUR
100+ 2.98 EUR
500+ 2.46 EUR
1000+ 1.94 EUR
SISS76LDN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 35V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISS76
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6005 Stücke - Preis und Lieferfrist anzeigen
SIC651ACD-T1-GE3 SIC651ACD-T1-GE3 sic651.pdf Vishay Siliconix Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
auf Bestellung 2699 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.2 EUR
10+ 6.46 EUR
25+ 6.1 EUR
100+ 5.2 EUR
250+ 4.88 EUR
500+ 4.27 EUR
1000+ 3.8 EUR
SQJ476EP-T1_GE3 SQJ476EP-T1_GE3 sqj476ep.pdf Vishay Siliconix Description: MOSFET N-CH 100V 23A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SQJ476
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS126DN-T1-GE3 SIS126DN-T1-GE3 sis126dn.pdf Vishay Siliconix Description: MOSFET N-CH 80V 12A/45.1A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1402pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS126
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 12A/45.1A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1402pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS126
auf Bestellung 9215 Stücke
Lieferzeit 21-28 Tag (e)
SIHH080N60E-T1-GE3 SIHH080N60E-T1-GE3 sihh080n60e.pdf Vishay Siliconix Description: E SERIES POWER MOSFET POWERPAK 8
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.26 EUR
10+ 11.91 EUR
SIHF080N60E-GE3 SIHF080N60E-GE3 sihf080n60e.pdf Vishay Siliconix Description: E SERIES POWER MOSFET TO-220 FUL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP080N60E-GE3 SIHP080N60E-GE3 sihp080n60e.pdf Vishay Siliconix Description: E SERIES POWER MOSFET TO-220AB,
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG080N60E-GE3 SIHG080N60E-GE3 sihg080n60e.pdf Vishay Siliconix Description: E SERIES POWER MOSFET TO-247AC,
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 506 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.92 EUR
10+ 11.6 EUR
100+ 9.5 EUR
500+ 8.09 EUR
DG4157EDN-T1-GE4 DG4157EDN-T1-GE4 dg4157e.pdf Vishay Siliconix Description: IC ANALOG SWITCH 6MICRODFN
Supplier Device Package: 6-UDFN (1x1)
-3db Bandwidth: 152MHz
On-State Resistance (Max): 1.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 3nA
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -41dB @ 10MHz
Charge Injection: -5pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.85 EUR
Vishay Siliconix Description: IC ANALOG SWITCH 6MICRODFN
Supplier Device Package: 6-UDFN (1x1)
-3db Bandwidth: 152MHz
On-State Resistance (Max): 1.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 3nA
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -41dB @ 10MHz
Charge Injection: -5pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
auf Bestellung 11965 Stücke
Lieferzeit 21-28 Tag (e)
13+ 2.05 EUR
15+ 1.81 EUR
25+ 1.7 EUR
100+ 1.39 EUR
250+ 1.29 EUR
500+ 1.1 EUR
1000+ 0.88 EUR
DG2034EDQ-T1-GE3 DG2034EDQ-T1-GE3 dg2034e.pdf Vishay Siliconix Description: IC SWITCH SP4T SINGLE 10MSOP
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -71dB @ 1MHz
Charge Injection: -2.6pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR402DP-T1-GE3 SIDR402DP-T1-GE3 sidr402dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 64.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS70DN-T1-GE3 SISS70DN-T1-GE3 siss70dn.pdf Vishay Siliconix Description: MOSFET N-CH 125V 8.5A/31A PPAK
Base Part Number: SISS70
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 62.5V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 31A (Tc)
Drain to Source Voltage (Vdss): 125V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 125V 8.5A/31A PPAK
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 62.5V
Base Part Number: SISS70
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 31A (Tc)
Drain to Source Voltage (Vdss): 125V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5559 Stücke
Lieferzeit 21-28 Tag (e)
SIHB055N60EF-GE3 SIHB055N60EF-GE3 sihb055n60ef.pdf Vishay Siliconix Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3707 pF @ 100 V
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
DG2032EDN-T1-GE4 DG2032EDN-T1-GE4 dg2032e.pdf Vishay Siliconix Description: IC ANALOG SWITCH DUAL 12QFN
Number of Circuits: 2
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Part Status: Active
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC ANALOG SWITCH DUAL 12QFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Channel-to-Channel Matching (ΔRon): 10mOhm
auf Bestellung 2315 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.08 EUR
10+ 3.65 EUR
25+ 3.47 EUR
100+ 2.85 EUR
250+ 2.66 EUR
500+ 2.35 EUR
1000+ 1.93 EUR
SIHFZ48RS-GE3 SIHFZ48RS-GE3 91296.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ500AEP-T1_GE3 SQJ500AEP-T1_GE3 sqj500aep.pdf Vishay Siliconix Description: MOSFET N/P CHAN 40V SO8L DUAL
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ142E-T1_GE3 Vishay Siliconix Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ142
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ100EL-T1_GE3 SQJQ100EL-T1_GE3 sqjq100el.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ100
auf Bestellung 1970 Stücke
Lieferzeit 21-28 Tag (e)
SQD10950E_GE3 SQD10950E_GE3 sqd10950e.pdf Vishay Siliconix Description: MOSFET N-CH 250V 11.5A TO252AA
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 25V
Power Dissipation (Max): 62W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SQD10950
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 250V 11.5A TO252AA
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 25V
Power Dissipation (Max): 62W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SQD10950
auf Bestellung 2489 Stücke
Lieferzeit 21-28 Tag (e)
SI6423ADQ-T1-GE3 SI6423ADQ-T1-GE3 si6423adq.pdf Vishay Siliconix Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6423
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP
Base Part Number: SI6423
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5955 Stücke
Lieferzeit 21-28 Tag (e)
IRFR110PBF-BE3 IRFR110PBF-BE3 sihfr110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 4.3A DPAK
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA26DP-T1-RE3 SIRA26DP-T1-RE3 sira26dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2247 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 43.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 25V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 43.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2247 pF @ 10 V
auf Bestellung 600 Stücke
Lieferzeit 21-28 Tag (e)
14+ 1.9 EUR
16+ 1.68 EUR
100+ 1.29 EUR
500+ 1.02 EUR
SISS72DN-T1-GE3 SISS72DN-T1-GE3 siss72dn.pdf Vishay Siliconix Description: MOSFET N-CH 150V 7A/25.5A PPAK
Base Part Number: SISS72
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 150V 7A/25.5A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISS72
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
auf Bestellung 3793 Stücke
Lieferzeit 21-28 Tag (e)
SIR401DP-T1-GE3 SIR401DP-T1-GE3 sir401dp.pdf Vishay Siliconix Description: MOSFET P-CH 20V 50A PPAK SO-8
Base Part Number: SIR401
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIR401
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 39W (Tc)
auf Bestellung 5260 Stücke
Lieferzeit 21-28 Tag (e)
SIR474DP-T1-GE3 SIR474DP-T1-GE3 sir474dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3542 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 666 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3542 Stücke - Preis und Lieferfrist anzeigen
11+ 2.47 EUR
12+ 2.18 EUR
100+ 1.67 EUR
500+ 1.32 EUR
SIR474DP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 30V 20A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3419AEEV-T1_GE3 SQ3419AEEV-T1_GE3 sq3419aeev.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC473ED-T1-GE3 SIC473ED-T1-GE3 SiC47x_Jul04_2018.pdf Vishay Siliconix Description: IC REG BUCK ADJ 5A MLP55-27
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 50.6V
Current - Output: 5A
Frequency - Switching: 20kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Manufacturer: Vishay Siliconix
Base Part Number: SIC473
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC REG BUCK ADJ 5A MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 50.6V
Current - Output: 5A
Frequency - Switching: 20kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Manufacturer: Vishay Siliconix
Base Part Number: SIC473
auf Bestellung 1946 Stücke
Lieferzeit 21-28 Tag (e)
SQJA66EP-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJA66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: Standard
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SQJA66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: Standard
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Packaging: Cut Tape (CT)
auf Bestellung 3025 Stücke
Lieferzeit 21-28 Tag (e)
SI7370DP-T1-GE3 SI7370DP-T1-GE3 si7370dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2418 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 113 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2418 Stücke - Preis und Lieferfrist anzeigen
4+ 8.03 EUR
10+ 7.22 EUR
100+ 5.8 EUR
SIHFPS43N50K-GE3 SIHFPS43N50K-GE3 sihfps43n50k.pdf Vishay Siliconix Description: MOSFET N-CH 500V SUPER-247
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8310pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP40012EL-GE3 SUP40012EL-GE3 sup40012el.pdf Vishay Siliconix Description: MOSFET N-CH 40V 150A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: SUP40012
Manufacturer: Vishay Siliconix
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10930pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 893 Stücke
Lieferzeit 21-28 Tag (e)
SIC820ED-T1-GE3 Vishay Siliconix Description: IC POWER STAGE 80A 5X6 MLP
Technology: Power MOSFET
Current - Output / Channel: 80A
Applications: DC-DC Converters, Synchronous Buck Converter
Voltage - Supply: 3.3V ~ 5V
Output Configuration: High Side
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Over Current, Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP39-65
Voltage - Load: 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
SISA01DN-T1-GE3 SISA01DN-T1-GE3 sisa01dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 22.4A/60A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA01
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 30V 22.4A/60A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA01
auf Bestellung 6616 Stücke
Lieferzeit 21-28 Tag (e)
SIC479ED-T1-GE3 sic47x.pdf Vishay Siliconix Description: IC REG BUCK 3A PPPAK MLP55-27L
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 24V
Current - Output: 3A
Frequency - Switching: 100kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC479
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: IC REG BUCK 3A PPPAK MLP55-27L
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 24V
Current - Output: 3A
Frequency - Switching: 100kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC479
auf Bestellung 2995 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
SIHP11N80AE-GE3 SIHP11N80AE-GE3 sihp11n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 8A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
auf Bestellung 979 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2040 Stücke - Preis und Lieferfrist anzeigen
SIR606BDP-T1-RE3 SIR606BDP-T1-RE3 sir606bdp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 10.9A PPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIR606
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 50V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1685 Stücke - Preis und Lieferfrist anzeigen
SIR624DP-T1-RE3 SIR624DP-T1-RE3 sir624dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Part Status: Active
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50034EL_GE3 SQD50034EL_GE3 sqd50034el.pdf Vishay Siliconix Description: MOSFET N-CH 60V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF9540S-GE3 SIHF9540S-GE3 91079.pdf Vishay Siliconix Description: MOSFET P-CH 100V 19A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBF30PBF-BE3 IRFBF30PBF-BE3 91122.pdf Vishay Siliconix Description: MOSFET N-CH 900V 3.6A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
SI2369BDS-T1-GE3 SI2369BDS-T1-GE3 si2369bds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5274 Stücke - Preis und Lieferfrist anzeigen
SQ4937EY-T1_BE3 SQ4937EY-T1_BE3 Vishay Siliconix Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Base Part Number: SQ4937
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQ4937
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
SQ4949EY-T1_BE3 SQ4949EY-T1_BE3 Vishay Siliconix Description: MOSFET 2 P-CH 30V 7.5A 8SOIC
FET Type: 2 P-Channel (Dual)
Power - Max: 3.3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4532AEY-T1_BE3 SQ4532AEY-T1_BE3 Vishay Siliconix Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4532
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Base Part Number: SQ4532
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1470 Stücke
Lieferzeit 21-28 Tag (e)
SQ4949EY-T1_GE3 SQ4949EY-T1_GE3 sq4949ey.pdf Vishay Siliconix Description: MOSFET 2 P-CH 30V 7.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4425EY-T1_GE3 SQ4425EY-T1_GE3 sq4425ey.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4425
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4425
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
SQ4431EY-T1_BE3 SQ4431EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4431
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 30V 10.8A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4431
auf Bestellung 2440 Stücke
Lieferzeit 21-28 Tag (e)
SQ4435EY-T1_BE3 SQ4435EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
auf Bestellung 476 Stücke
Lieferzeit 21-28 Tag (e)
SQ4410EY-T1_BE3 SQ4410EY-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 30V 15A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2428 Stücke
Lieferzeit 21-28 Tag (e)
SIHG026N60EF-GE3 sihg026n60ef.pdf
SIHG026N60EF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 521W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS92DN-T1-GE3 siss92dn.pdf
SISS92DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 12.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 125V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS92
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJH112E-T1-GE3
SIJH112E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23A/225A PPAK
Base Part Number: SIJH112
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 225A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 300 Stücke - Preis und Lieferfrist anzeigen
SIJA74DP-T1-GE3
SIJA74DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 24A/81.2A PPAK
Base Part Number: SIJA74
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5825 Stücke - Preis und Lieferfrist anzeigen
SIHA24N80AE-GE3
SIHA24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 9A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 969 Stücke
Lieferzeit 21-28 Tag (e)
SIHG24N80AE-GE3
SIHG24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Package / Case: TO-247-3
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1869 Stücke - Preis und Lieferfrist anzeigen
IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
auf Bestellung 1869 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.06 EUR
10+ 3.65 EUR
100+ 2.93 EUR
500+ 2.41 EUR
1000+ 2.06 EUR
SQJ401EP-T1_GE3 sqj401ep.pdf
SQJ401EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 32A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10015pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2666 Stücke - Preis und Lieferfrist anzeigen
SI1902DL-T1-BE3 si1902dl.pdf
SI1902DL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC-70-6
Power - Max: 270mW (Ta)
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7454FDP-T1-RE3
SI7454FDP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET POW
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 50V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.5A (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6010 Stücke - Preis und Lieferfrist anzeigen
SIHFPS37N50A-GE3 sihfps37n50a.pdf
SIHFPS37N50A-GE3
Hersteller: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 130 M @
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 446W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-274AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS05DN-T1-GE3 siss05dn.pdf
SISS05DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 29.4A/108A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS05
auf Bestellung 10903 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIHH080N60E-T1-GE3 sihh080n60e.pdf
SIHH080N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 8
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SIS178LDN-T1-GE3 sis110dn.pdf
SIS178LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 70 V (D-S) MOSFET POWE
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.9A (Ta), 45.3A (Tc)
Drain to Source Voltage (Vdss): 70V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1135pF @ 35V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 5860 Stücke
Lieferzeit 21-28 Tag (e)
SI1023CX-T1-GE3 si1023cx.pdf
SI1023CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1092 Stücke - Preis und Lieferfrist anzeigen
SI1023CX-T1-GE3 si1023cx.pdf
SI1023CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
auf Bestellung 1092 Stücke
Lieferzeit 21-28 Tag (e)
SIHP21N60EF-BE3
SIHP21N60EF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 995 Stücke - Preis und Lieferfrist anzeigen
SIZF906BDT-T1-GE3 sizf906bdt.pdf
SIZF906BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30 V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Part Status: Active
Drain to Source Voltage (Vdss): 30V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
FET Type: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5008 Stücke - Preis und Lieferfrist anzeigen
3000+ 1.94 EUR
SIZF906BDT-T1-GE3 sizf906bdt.pdf
SIZF906BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30 V (D-S) MOSFET
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual), Schottky
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 5008 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
7+ 4.26 EUR
10+ 3.82 EUR
100+ 2.98 EUR
500+ 2.46 EUR
1000+ 1.94 EUR
SISS76LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 70V 19.6A/67.4A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 70V
Current - Continuous Drain (Id) @ 25°C: 19.6A (Ta), 67.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 35V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISS76
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6005 Stücke - Preis und Lieferfrist anzeigen
SIC651ACD-T1-GE3 sic651.pdf
SIC651ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2699 Stücke - Preis und Lieferfrist anzeigen
SIC651ACD-T1-GE3 sic651.pdf
SIC651ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
auf Bestellung 2699 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.2 EUR
10+ 6.46 EUR
25+ 6.1 EUR
100+ 5.2 EUR
250+ 4.88 EUR
500+ 4.27 EUR
1000+ 3.8 EUR
SQJ476EP-T1_GE3 sqj476ep.pdf
SQJ476EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SQJ476
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS126DN-T1-GE3 sis126dn.pdf
SIS126DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1402pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS126
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9215 Stücke - Preis und Lieferfrist anzeigen
SIS126DN-T1-GE3 sis126dn.pdf
SIS126DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 45.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1402pF @ 40V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS126
auf Bestellung 9215 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIHH080N60E-T1-GE3 sihh080n60e.pdf
SIHH080N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 8
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 184W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 10 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.26 EUR
10+ 11.91 EUR
SIHF080N60E-GE3 sihf080n60e.pdf
SIHF080N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220 FUL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP080N60E-GE3 sihp080n60e.pdf
SIHP080N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG080N60E-GE3 sihg080n60e.pdf
SIHG080N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-247AC,
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 506 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.92 EUR
10+ 11.6 EUR
100+ 9.5 EUR
500+ 8.09 EUR
DG4157EDN-T1-GE4 dg4157e.pdf
DG4157EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 6MICRODFN
Supplier Device Package: 6-UDFN (1x1)
-3db Bandwidth: 152MHz
On-State Resistance (Max): 1.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 3nA
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -41dB @ 10MHz
Charge Injection: -5pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11965 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.85 EUR
DG4157EDN-T1-GE4 dg4157e.pdf
DG4157EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 6MICRODFN
Supplier Device Package: 6-UDFN (1x1)
-3db Bandwidth: 152MHz
On-State Resistance (Max): 1.2Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 3nA
Switch Time (Ton, Toff) (Max): 32ns, 28ns
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -41dB @ 10MHz
Charge Injection: -5pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
auf Bestellung 11965 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
13+ 2.05 EUR
15+ 1.81 EUR
25+ 1.7 EUR
100+ 1.39 EUR
250+ 1.29 EUR
500+ 1.1 EUR
1000+ 0.88 EUR
DG2034EDQ-T1-GE3 dg2034e.pdf
DG2034EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T SINGLE 10MSOP
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -71dB @ 1MHz
Charge Injection: -2.6pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-MSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIDR402DP-T1-GE3 sidr402dp.pdf
SIDR402DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 64.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISS70DN-T1-GE3 siss70dn.pdf
SISS70DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 125V 8.5A/31A PPAK
Base Part Number: SISS70
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 62.5V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 31A (Tc)
Drain to Source Voltage (Vdss): 125V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5559 Stücke - Preis und Lieferfrist anzeigen
SISS70DN-T1-GE3 siss70dn.pdf
SISS70DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 125V 8.5A/31A PPAK
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 62.5V
Base Part Number: SISS70
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 8.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 31A (Tc)
Drain to Source Voltage (Vdss): 125V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5559 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIHB055N60EF-GE3 sihb055n60ef.pdf
SIHB055N60EF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3707 pF @ 100 V
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
DG2032EDN-T1-GE4 dg2032e.pdf
DG2032EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL 12QFN
Number of Circuits: 2
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Part Status: Active
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2315 Stücke - Preis und Lieferfrist anzeigen
DG2032EDN-T1-GE4 dg2032e.pdf
DG2032EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL 12QFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Channel-to-Channel Matching (ΔRon): 10mOhm
auf Bestellung 2315 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.08 EUR
10+ 3.65 EUR
25+ 3.47 EUR
100+ 2.85 EUR
250+ 2.66 EUR
500+ 2.35 EUR
1000+ 1.93 EUR
SIHFZ48RS-GE3 91296.pdf
SIHFZ48RS-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 43A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ500AEP-T1_GE3 sqj500aep.pdf
SQJ500AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P CHAN 40V SO8L DUAL
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ142E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ142
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJQ100EL-T1_GE3 sqjq100el.pdf
SQJQ100EL-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ100
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1970 Stücke - Preis und Lieferfrist anzeigen
SQJQ100EL-T1_GE3 sqjq100el.pdf
SQJQ100EL-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Manufacturer: Vishay Siliconix
Base Part Number: SQJQ100
auf Bestellung 1970 Stücke
Lieferzeit 21-28 Tag (e)
SQD10950E_GE3 sqd10950e.pdf
SQD10950E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 11.5A TO252AA
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 25V
Power Dissipation (Max): 62W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SQD10950
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2489 Stücke - Preis und Lieferfrist anzeigen
SQD10950E_GE3 sqd10950e.pdf
SQD10950E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 11.5A TO252AA
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 25V
Power Dissipation (Max): 62W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SQD10950
auf Bestellung 2489 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
SI6423ADQ-T1-GE3 si6423adq.pdf
SI6423ADQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6423
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5955 Stücke - Preis und Lieferfrist anzeigen
SI6423ADQ-T1-GE3 si6423adq.pdf
SI6423ADQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP
Base Part Number: SI6423
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 5955 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
IRFR110PBF-BE3 sihfr110.pdf
IRFR110PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 4.3A DPAK
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA26DP-T1-RE3 sira26dp.pdf
SIRA26DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2247 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 43.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 600 Stücke - Preis und Lieferfrist anzeigen
SIRA26DP-T1-RE3 sira26dp.pdf
SIRA26DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 43.1W (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2247 pF @ 10 V
auf Bestellung 600 Stücke
Lieferzeit 21-28 Tag (e)
14+ 1.9 EUR
16+ 1.68 EUR
100+ 1.29 EUR
500+ 1.02 EUR
SISS72DN-T1-GE3 siss72dn.pdf
SISS72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7A/25.5A PPAK
Base Part Number: SISS72
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3793 Stücke - Preis und Lieferfrist anzeigen
SISS72DN-T1-GE3 siss72dn.pdf
SISS72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 7A/25.5A PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISS72
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
auf Bestellung 3793 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR401DP-T1-GE3 sir401dp.pdf
SIR401DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK SO-8
Base Part Number: SIR401
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5260 Stücke - Preis und Lieferfrist anzeigen
SIR401DP-T1-GE3 sir401dp.pdf
SIR401DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 9080pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIR401
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 39W (Tc)
auf Bestellung 5260 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR474DP-T1-GE3 sir474dp.pdf
SIR474DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4208 Stücke - Preis und Lieferfrist anzeigen
SIR474DP-T1-GE3 sir474dp.pdf
SIR474DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 666 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3542 Stücke - Preis und Lieferfrist anzeigen
11+ 2.47 EUR
12+ 2.18 EUR
100+ 1.67 EUR
500+ 1.32 EUR
SIR474DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3419AEEV-T1_GE3 sq3419aeev.pdf
SQ3419AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC473ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC473ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 5A MLP55-27
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 50.6V
Current - Output: 5A
Frequency - Switching: 20kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Manufacturer: Vishay Siliconix
Base Part Number: SIC473
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1946 Stücke - Preis und Lieferfrist anzeigen
SIC473ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC473ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 5A MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 50.6V
Current - Output: 5A
Frequency - Switching: 20kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Manufacturer: Vishay Siliconix
Base Part Number: SIC473
auf Bestellung 1946 Stücke
Lieferzeit 21-28 Tag (e)
SQJA66EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJA66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: Standard
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3025 Stücke - Preis und Lieferfrist anzeigen
SQJA66EP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SQJA66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
FET Feature: Standard
Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Packaging: Cut Tape (CT)
auf Bestellung 3025 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI7370DP-T1-GE3 si7370dp.pdf
SI7370DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2531 Stücke - Preis und Lieferfrist anzeigen
SI7370DP-T1-GE3 si7370dp.pdf
SI7370DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9.6A PPAK SO-8
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 113 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2418 Stücke - Preis und Lieferfrist anzeigen
4+ 8.03 EUR
10+ 7.22 EUR
100+ 5.8 EUR
SIHFPS43N50K-GE3 sihfps43n50k.pdf
SIHFPS43N50K-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V SUPER-247
Package / Case: TO-274AA
Supplier Device Package: SUPER-247™ (TO-274AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8310pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP40012EL-GE3 sup40012el.pdf
SUP40012EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 150A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Base Part Number: SUP40012
Manufacturer: Vishay Siliconix
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10930pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 893 Stücke
Lieferzeit 21-28 Tag (e)
SIC820ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 80A 5X6 MLP
Technology: Power MOSFET
Current - Output / Channel: 80A
Applications: DC-DC Converters, Synchronous Buck Converter
Voltage - Supply: 3.3V ~ 5V
Output Configuration: High Side
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Over Current, Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP39-65
Voltage - Load: 12V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
SISA01DN-T1-GE3 sisa01dn.pdf
SISA01DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 22.4A/60A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA01
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6616 Stücke - Preis und Lieferfrist anzeigen
SISA01DN-T1-GE3 sisa01dn.pdf
SISA01DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 22.4A/60A PPAK
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 22.4A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SISA01
auf Bestellung 6616 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIC479ED-T1-GE3 sic47x.pdf
Hersteller: Vishay Siliconix
Description: IC REG BUCK 3A PPPAK MLP55-27L
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 24V
Current - Output: 3A
Frequency - Switching: 100kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC479
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIC479ED-T1-GE3 sic47x.pdf
Hersteller: Vishay Siliconix
Description: IC REG BUCK 3A PPPAK MLP55-27L
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 24V
Current - Output: 3A
Frequency - Switching: 100kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC479
auf Bestellung 2995 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
SIHP11N80AE-GE3 sihp11n80ae.pdf
SIHP11N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 8A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
auf Bestellung 979 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2040 Stücke - Preis und Lieferfrist anzeigen
SIR606BDP-T1-RE3 sir606bdp.pdf
SIR606BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 10.9A PPAK
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIR606
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 50V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1685 Stücke - Preis und Lieferfrist anzeigen
SIR624DP-T1-RE3 sir624dp.pdf
SIR624DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Part Status: Active
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50034EL_GE3 sqd50034el.pdf
SQD50034EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF9540S-GE3 91079.pdf
SIHF9540S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBF30PBF-BE3 91122.pdf
IRFBF30PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 3.6A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1000 Stücke
Lieferzeit 21-28 Tag (e)
SI2369BDS-T1-GE3 si2369bds.pdf
SI2369BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5274 Stücke - Preis und Lieferfrist anzeigen
SQ4937EY-T1_BE3
SQ4937EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Base Part Number: SQ4937
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SQ4937EY-T1_BE3
SQ4937EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CHANNEL 30V 5A 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQ4937
Manufacturer: Vishay Siliconix
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SQ4949EY-T1_BE3
SQ4949EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CH 30V 7.5A 8SOIC
FET Type: 2 P-Channel (Dual)
Power - Max: 3.3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4532AEY-T1_BE3
SQ4532AEY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4532
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1470 Stücke - Preis und Lieferfrist anzeigen
SQ4532AEY-T1_BE3
SQ4532AEY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Base Part Number: SQ4532
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1470 Stücke
Lieferzeit 21-28 Tag (e)
SQ4949EY-T1_GE3 sq4949ey.pdf
SQ4949EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CH 30V 7.5A 8SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4425EY-T1_GE3 sq4425ey.pdf
SQ4425EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4425
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SQ4425EY-T1_GE3 sq4425ey.pdf
SQ4425EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4425
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SQ4431EY-T1_BE3
SQ4431EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.8A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4431
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2440 Stücke - Preis und Lieferfrist anzeigen
SQ4431EY-T1_BE3
SQ4431EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.8A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V
Power Dissipation (Max): 6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4431
auf Bestellung 2440 Stücke
Lieferzeit 21-28 Tag (e)
SQ4435EY-T1_BE3
SQ4435EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 476 Stücke - Preis und Lieferfrist anzeigen
SQ4435EY-T1_BE3
SQ4435EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
auf Bestellung 476 Stücke
Lieferzeit 21-28 Tag (e)
SQ4410EY-T1_BE3
SQ4410EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2428 Stücke - Preis und Lieferfrist anzeigen
SQ4410EY-T1_BE3
SQ4410EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2428 Stücke
Lieferzeit 21-28 Tag (e)
Wählen Sie Seite:    << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116  Nächste Seite >> ]