Die Produkte vishay siliconix
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Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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IRF740LCPBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Power Dissipation (Max): 125W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 991 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SIHG052N60EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 48A TO247AC Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIHG052 Package / Case: TO-247-3 Supplier Device Package: TO-247AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 278W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
Vishay Siliconix |
Description: MOSFET N-CH 600V 48A TO247AC Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SIHG052 Package / Case: TO-247-3 Supplier Device Package: TO-247AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 278W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V |
auf Bestellung 493 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SI3443BDV-T1-BE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
Vishay Siliconix |
Description: MOSFET P-CH 20V 3.6A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V |
auf Bestellung 2350 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SI4410BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 7.5A 8SO Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2084 Stücke - Preis und Lieferfrist anzeigen
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SQS484ENW-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 16A PPAK1212-8 Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHH240N60E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 12A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
Vishay Siliconix |
Description: MOSFET N-CH 600V 12A PPAK 8 X 8 Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 48 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SIR438DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK SO-8 Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK SO-8 Supplier Device Package: PowerPAK® SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Part Status: Active Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 261 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQJQ906E-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK8X8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 50W FET Type: 2 N-Channel (Dual) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Dual Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SQ4840EY-T1_BE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 20.7A 8SOIC Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V Power Dissipation (Max): 7.1W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SQ4840 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2490 Stücke - Preis und Lieferfrist anzeigen
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SJM184BEC | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM185BEA | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM185BXA | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM187BCC | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM188BCA | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM188BCC | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM188BIA | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM188BIC | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM188BXA | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
SJM188BXC | Vishay Siliconix |
Description: IC ANALOG SWITCH Packaging: Bulk Part Status: Obsolete Base Part Number: SJM18 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||
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IRF710PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 2A TO220AB Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V |
auf Bestellung 2533 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRFZ44RPBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Mounting Type: Through Hole Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 966 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRFZ44PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Technology: MOSFET (Metal Oxide) Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel |
auf Bestellung 1740 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRLZ34PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 30A TO220AB Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Vgs (Max): ±10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Packaging: Tube Package / Case: TO-220-3 |
auf Bestellung 322 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQJA38EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 Base Part Number: SQJA38 Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 68W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRF830BPBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5.3A TO220AB Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Part Status: Active Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB |
auf Bestellung 843 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRLZ44PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Part Status: Active Supplier Device Package: TO-220AB |
auf Bestellung 806 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF840BPBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 8.7A TO220AB Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) FET Type: N-Channel Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 Packaging: Tube Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA |
auf Bestellung 1964 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF644PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 14A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRF9540PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 19A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 2963 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQA442EJ-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 9A PPAK SC70-6 Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 636pF @ 25V Power Dissipation (Max): 13.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Base Part Number: SQA442 |
auf Bestellung 6000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 9A PPAK SC70-6 Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 636pF @ 25V Power Dissipation (Max): 13.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6 Base Part Number: SQA442 |
auf Bestellung 8889 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQJ415EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CHAN 40V POWERPAK SO-8L Base Part Number: SQJ415 Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 45W (Tc) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V |
auf Bestellung 3000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Vishay Siliconix |
Description: MOSFET P-CHAN 40V POWERPAK SO-8L Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 45W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Base Part Number: SQJ415 Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 3049 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF730APBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Packaging: Tube Package / Case: TO-220-3 Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel |
auf Bestellung 676 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF9Z34PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 18A TO220AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
auf Bestellung 133 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRFZ24PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO220AB Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) |
auf Bestellung 225 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF9Z24PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 11A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 963 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF630PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 9A TO220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRF9530PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V |
auf Bestellung 805 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SIHA15N80AE-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 800V 6A TO220 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: SIHA15 Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 33W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1093pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V |
auf Bestellung 1047 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SIHB15N80AE-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 800V 13A D2PAK Base Part Number: SIHB15 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 156W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1093pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
auf Bestellung 1050 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SIHG15N80AE-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 800V 13A TO247AC Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V |
auf Bestellung 523 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRFZ34PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 30A TO220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 88W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 976 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SISS05DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 29.4A/108A PPAK Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Vgs (Max): +16V, -20V Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S Base Part Number: SISS05 |
auf Bestellung 6000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 10903 Stücke - Preis und Lieferfrist anzeigen
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IRLZ14PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
auf Bestellung 17 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRLZ24PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 250µA Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V Power Dissipation (Max): 60W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 936 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF820APBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 2.5A TO220AB Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V |
auf Bestellung 714 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQ4080EY-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHANNEL 150V 18A 8SO Power Dissipation (Max): 7.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 75V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Base Part Number: SQ4080 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Vishay Siliconix |
Description: MOSFET N-CHANNEL 150V 18A 8SO Vgs (Max): ±20V Base Part Number: SQ4080 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Power Dissipation (Max): 7.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 75V |
auf Bestellung 2501 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SI1539CDL-T1-BE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V SOT363 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Base Part Number: SI1539 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
Vishay Siliconix |
Description: MOSFET N/P-CH 30V SOT363 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V Power - Max: 290mW (Ta), 340mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Base Part Number: SI1539 |
auf Bestellung 2407 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQM200N04-1M1L_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V |
auf Bestellung 1 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQM200N04-1M8_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17350pF @ 25V Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Base Part Number: SQM200N |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
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SIR871DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 48A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3395pF @ 50V Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR871 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIP32475DN-T1-GE4 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4UDFN Packaging: Tape & Reel (TR) Part Status: Active Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: Logic Voltage - Load: 0V ~ 5.5V Current - Output (Max): 2A Rds On (Typ): 47mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 4-UDFN (1x1) Package / Case: 4-XFDFN Base Part Number: SIP324 |
auf Bestellung 3000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4UDFN Packaging: Cut Tape (CT) Part Status: Active Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: Logic Voltage - Load: 0V ~ 5.5V Current - Output (Max): 2A Rds On (Typ): 47mOhm Input Type: Non-Inverting Features: Slew Rate Controlled Fault Protection: Reverse Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 4-UDFN (1x1) Package / Case: 4-XFDFN Base Part Number: SIP324 |
auf Bestellung 3825 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF9510PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 4A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
auf Bestellung 782 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRFL014TRPBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 2.7A SOT223 Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: SOT-223 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2W (Ta), 3.1W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SQJA60EP-T1_BE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 30A POWERPAKSO-8 Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
Vishay Siliconix |
Description: MOSFET N-CH 60V 30A POWERPAKSO-8 Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 15 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRL630PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 9A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±10V Part Status: Active Supplier Device Package: TO-220AB Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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DG604EEN-T1-GE4 |
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Vishay Siliconix |
Description: IC MULTIPLEXER 16MINIQFN Switch Circuit: SPST - NO Crosstalk: -65dB @ 10MHz Charge Injection: -0.3pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 414MHz On-State Resistance (Max): 101Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Tape & Reel (TR) Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF Switch Time (Ton, Toff) (Max): 54ns, 52ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 1:1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
Vishay Siliconix |
Description: IC MULTIPLEXER 16MINIQFN Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF Switch Time (Ton, Toff) (Max): 54ns, 52ns Channel-to-Channel Matching (ΔRon): 5Ohm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -65dB @ 10MHz Charge Injection: -0.3pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 414MHz On-State Resistance (Max): 101Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Cut Tape (CT) |
auf Bestellung 1503 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SISS52DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 47.1A/162A PPAK Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 47.1A (Ta), 162A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SQ4153EY-T1_BE3 | Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 25A 8SOIC Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V Power Dissipation (Max): 7.1W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SQ4153 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 25A 8SOIC Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V Power Dissipation (Max): 7.1W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Base Part Number: SQ4153 |
auf Bestellung 469 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRFR120TRRPBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V |
auf Bestellung 1140 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRFR120TRLPBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRFR120PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRFB9N60APBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 9.2A TO220AB Drain to Source Voltage (Vdss): 600 V Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V |
auf Bestellung 31 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF9630PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 6.5A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole |
auf Bestellung 940 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF9620PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 3.5A TO220AB Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
auf Bestellung 800 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF9610PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 1.8A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 FET Type: P-Channel Packaging: Tube Technology: MOSFET (Metal Oxide) |
auf Bestellung 928 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SQ2308CES-T1_BE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 2.3A SOT23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drain to Source Voltage (Vdss): 60V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
Vishay Siliconix |
Description: MOSFET N-CH 60V 2.3A SOT23-3 Power Dissipation (Max): 2W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) |
auf Bestellung 166 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SI1308EDL-T1-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 1.5A/1.4A SC70-3 Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRF624PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 4.4A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Packaging: Tube Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
auf Bestellung 1000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SIHD6N80AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 5A DPAK Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Part Status: Active Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 2001 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 5999 Stücke - Preis und Lieferfrist anzeigen
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IRFBE20PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 1.8A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 54W (Tc) Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRF9520PBF-BE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 6.8A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Packaging: Tube Package / Case: TO-220-3 |
auf Bestellung 71 Stücke![]() Lieferzeit 21-28 Tag (e) |
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SIZ270DT-T1-GE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) MOSFE Supplier Device Package: 8-PowerPair® (3.3x3.3) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.3W (Ta), 33W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIZ270 |
auf Bestellung 6000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) MOSFE Base Part Number: SIZ270 Supplier Device Package: 8-PowerPair® (3.3x3.3) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 4.3W (Ta), 33W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc) Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 6015 Stücke![]() Lieferzeit 21-28 Tag (e) |
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IRF740LCPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 991 Stücke Description: MOSFET N-CH 400V 10A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Lieferzeit 21-28 Tag (e)
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SIHG052N60EF-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 48A TO247AC
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHG052
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 48A TO247AC
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHG052
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
auf Bestellung 493 Stücke - Preis und Lieferfrist anzeigen
SIHG052N60EF-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 48A TO247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIHG052
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
auf Bestellung 493 Stücke Description: MOSFET N-CH 600V 48A TO247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIHG052
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3380pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V

Lieferzeit 21-28 Tag (e)
SI3443BDV-T1-BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 3.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
auf Bestellung 2350 Stücke - Preis und Lieferfrist anzeigen
SI3443BDV-T1-BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
auf Bestellung 2350 Stücke Description: MOSFET P-CH 20V 3.6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V

Lieferzeit 21-28 Tag (e)
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SI4410BDY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.5A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 7.5A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
auf Bestellung 2084 Stücke - Preis und Lieferfrist anzeigen
SQS484ENW-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 16A PPAK1212-8
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
SIHH240N60E-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 12A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
auf Bestellung 48 Stücke - Preis und Lieferfrist anzeigen
SIHH240N60E-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 48 Stücke Description: MOSFET N-CH 600V 12A PPAK 8 X 8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V

Lieferzeit 21-28 Tag (e)
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SIR438DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 25V 60A PPAK SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 261 Stücke - Preis und Lieferfrist anzeigen
SIR438DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Part Status: Active
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 261 Stücke Description: MOSFET N-CH 25V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Part Status: Active
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
|
SQJQ906E-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 50W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 40V POWERPAK8X8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 50W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8 Dual
Part Status: Active
SQ4840EY-T1_BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4840
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 20.7A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4840
auf Bestellung 2490 Stücke - Preis und Lieferfrist anzeigen
SJM184BEC |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM185BEA |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM185BXA |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM187BCC |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM188BCA |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM188BCC |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM188BIA |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM188BIC |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM188BXA |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
SJM188BXC |
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH
Packaging: Bulk
Part Status: Obsolete
Base Part Number: SJM18
IRF710PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 2A TO220AB
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
auf Bestellung 2533 Stücke Description: MOSFET N-CH 400V 2A TO220AB
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V

Lieferzeit 21-28 Tag (e)
|
IRFZ44RPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 966 Stücke Description: MOSFET N-CH 60V 50A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Lieferzeit 21-28 Tag (e)
|
IRFZ44PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
auf Bestellung 1740 Stücke Description: MOSFET N-CH 60V 50A TO220AB
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel

Lieferzeit 21-28 Tag (e)
|
IRLZ34PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO220AB
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 322 Stücke Description: MOSFET N-CH 60V 30A TO220AB
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3

Lieferzeit 21-28 Tag (e)
|
SQJA38EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Base Part Number: SQJA38
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 60A PPAK SO-8
Base Part Number: SQJA38
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
IRF830BPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
auf Bestellung 843 Stücke Description: MOSFET N-CH 500V 5.3A TO220AB
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB

Lieferzeit 21-28 Tag (e)
|
IRLZ44PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
auf Bestellung 806 Stücke Description: MOSFET N-CH 60V 50A TO220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB

Lieferzeit 21-28 Tag (e)
|
IRF840BPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8.7A TO220AB
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
auf Bestellung 1964 Stücke Description: MOSFET N-CH 500V 8.7A TO220AB
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA

Lieferzeit 21-28 Tag (e)
|
IRF644PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 14A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
IRF9540PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 2963 Stücke Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V

Lieferzeit 21-28 Tag (e)
|
SQA442EJ-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9A PPAK SC70-6
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 636pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA442
auf Bestellung 6000 Stücke Description: MOSFET N-CH 60V 9A PPAK SC70-6
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 636pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA442

Lieferzeit 21-28 Tag (e)
auf Bestellung 8889 Stücke - Preis und Lieferfrist anzeigen
SQA442EJ-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 9A PPAK SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 636pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA442
auf Bestellung 8889 Stücke Description: MOSFET N-CH 60V 9A PPAK SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 32mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 636pF @ 25V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Base Part Number: SQA442

Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SQJ415EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V POWERPAK SO-8L
Base Part Number: SQJ415
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
auf Bestellung 3000 Stücke Description: MOSFET P-CHAN 40V POWERPAK SO-8L
Base Part Number: SQJ415
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V

Lieferzeit 21-28 Tag (e)
auf Bestellung 3049 Stücke - Preis und Lieferfrist anzeigen
SQJ415EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V POWERPAK SO-8L
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Base Part Number: SQJ415
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3049 Stücke Description: MOSFET P-CHAN 40V POWERPAK SO-8L
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Base Part Number: SQJ415
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
IRF730APBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
auf Bestellung 676 Stücke Description: MOSFET N-CH 400V 5.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel

Lieferzeit 21-28 Tag (e)
|
IRF9Z34PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 18A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 133 Stücke Description: MOSFET P-CH 60V 18A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3

Lieferzeit 21-28 Tag (e)
|
IRFZ24PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
auf Bestellung 225 Stücke Description: MOSFET N-CH 60V 17A TO220AB
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)

Lieferzeit 21-28 Tag (e)
|
IRF9Z24PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 11A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 963 Stücke Description: MOSFET P-CH 60V 11A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Lieferzeit 21-28 Tag (e)
|
IRF630PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 9A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
IRF9530PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
auf Bestellung 805 Stücke Description: MOSFET P-CH 100V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V

Lieferzeit 21-28 Tag (e)
|
SIHA15N80AE-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 6A TO220
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA15
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1093pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
auf Bestellung 1047 Stücke Description: MOSFET N-CH 800V 6A TO220
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA15
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1093pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V

Lieferzeit 21-28 Tag (e)
SIHB15N80AE-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 13A D2PAK
Base Part Number: SIHB15
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1093pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 1050 Stücke Description: MOSFET N-CH 800V 13A D2PAK
Base Part Number: SIHB15
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1093pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix

Lieferzeit 21-28 Tag (e)
SIHG15N80AE-GE3 |

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 13A TO247AC
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V
auf Bestellung 523 Stücke Description: MOSFET N-CH 800V 13A TO247AC
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1093 pF @ 100 V

Lieferzeit 21-28 Tag (e)
IRFZ34PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 976 Stücke Description: MOSFET N-CH 60V 30A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Lieferzeit 21-28 Tag (e)
|
SISS05DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 29.4A/108A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS05
auf Bestellung 6000 Stücke Description: MOSFET P-CH 30V 29.4A/108A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS05

Lieferzeit 21-28 Tag (e)
auf Bestellung 10903 Stücke - Preis und Lieferfrist anzeigen
IRLZ14PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 17 Stücke Description: MOSFET N-CH 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole

Lieferzeit 21-28 Tag (e)
|
IRLZ24PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 60W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 936 Stücke Description: MOSFET N-CH 60V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 5V
Power Dissipation (Max): 60W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Lieferzeit 21-28 Tag (e)
|
IRF820APBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A TO220AB
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
auf Bestellung 714 Stücke Description: MOSFET N-CH 500V 2.5A TO220AB
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V

Lieferzeit 21-28 Tag (e)
|
SQ4080EY-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 150V 18A 8SO
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SQ4080
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke Description: MOSFET N-CHANNEL 150V 18A 8SO
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SQ4080
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 2501 Stücke - Preis und Lieferfrist anzeigen
SQ4080EY-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 150V 18A 8SO
Vgs (Max): ±20V
Base Part Number: SQ4080
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 75V
auf Bestellung 2501 Stücke Description: MOSFET N-CHANNEL 150V 18A 8SO
Vgs (Max): ±20V
Base Part Number: SQ4080
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Power Dissipation (Max): 7.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1590pF @ 75V

Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SI1539CDL-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SOT363
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SI1539
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V SOT363
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SI1539
auf Bestellung 2407 Stücke - Preis und Lieferfrist anzeigen
SI1539CDL-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SOT363
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SI1539
auf Bestellung 2407 Stücke Description: MOSFET N/P-CH 30V SOT363
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 890mOhm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V, 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 34pF @ 15V
Power - Max: 290mW (Ta), 340mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Base Part Number: SI1539

Lieferzeit 21-28 Tag (e)
SQM200N04-1M1L_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
auf Bestellung 1 Stücke Description: MOSFET N-CH 40V 200A TO263-7
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V

Lieferzeit 21-28 Tag (e)
SQM200N04-1M8_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 17350pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Base Part Number: SQM200N
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 17350pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Base Part Number: SQM200N
SIR871DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 48A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3395pF @ 50V
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR871
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 48A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3395pF @ 50V
Power Dissipation (Max): 89W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR871
SIP32475DN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4UDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: Logic
Voltage - Load: 0V ~ 5.5V
Current - Output (Max): 2A
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 4-UDFN (1x1)
Package / Case: 4-XFDFN
Base Part Number: SIP324
auf Bestellung 3000 Stücke Description: IC PWR SWITCH P-CHAN 1:1 4UDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: Logic
Voltage - Load: 0V ~ 5.5V
Current - Output (Max): 2A
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 4-UDFN (1x1)
Package / Case: 4-XFDFN
Base Part Number: SIP324

Lieferzeit 21-28 Tag (e)
auf Bestellung 3825 Stücke - Preis und Lieferfrist anzeigen
SIP32475DN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4UDFN
Packaging: Cut Tape (CT)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: Logic
Voltage - Load: 0V ~ 5.5V
Current - Output (Max): 2A
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 4-UDFN (1x1)
Package / Case: 4-XFDFN
Base Part Number: SIP324
auf Bestellung 3825 Stücke Description: IC PWR SWITCH P-CHAN 1:1 4UDFN
Packaging: Cut Tape (CT)
Part Status: Active
Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: Logic
Voltage - Load: 0V ~ 5.5V
Current - Output (Max): 2A
Rds On (Typ): 47mOhm
Input Type: Non-Inverting
Features: Slew Rate Controlled
Fault Protection: Reverse Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 4-UDFN (1x1)
Package / Case: 4-XFDFN
Base Part Number: SIP324

Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
IRF9510PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 782 Stücke Description: MOSFET P-CH 100V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V

Lieferzeit 21-28 Tag (e)
|
IRFL014TRPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 2.7A SOT223
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
SQJA60EP-T1_BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 30A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
SQJA60EP-T1_BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 15 Stücke Description: MOSFET N-CH 60V 30A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
|
IRL630PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 9A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Part Status: Active
Supplier Device Package: TO-220AB
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
DG604EEN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16MINIQFN
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MULTIPLEXER 16MINIQFN
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
auf Bestellung 1503 Stücke - Preis und Lieferfrist anzeigen
DG604EEN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
auf Bestellung 1503 Stücke Description: IC MULTIPLEXER 16MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 4.2pF, 6.8pF
Switch Time (Ton, Toff) (Max): 54ns, 52ns
Channel-to-Channel Matching (ΔRon): 5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -65dB @ 10MHz
Charge Injection: -0.3pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 414MHz
On-State Resistance (Max): 101Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
|
SISS52DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 47.1A/162A PPAK
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.1A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 47.1A/162A PPAK
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.1A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.2V @ 250µA
SQ4153EY-T1_BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4153
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHANNEL 12V 25A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4153
auf Bestellung 469 Stücke - Preis und Lieferfrist anzeigen
SQ4153EY-T1_BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4153
auf Bestellung 469 Stücke Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 6V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SQ4153

Lieferzeit 21-28 Tag (e)
IRFR120TRRPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 1140 Stücke - Preis und Lieferfrist anzeigen
IRFR120TRRPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 1140 Stücke Description: MOSFET N-CH 100V 7.7A DPAK
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V

Lieferzeit 21-28 Tag (e)
|
IRFR120TRLPBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 7.7A DPAK
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
IRFR120PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
IRFB9N60APBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 9.2A TO220AB
Drain to Source Voltage (Vdss): 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
auf Bestellung 31 Stücke Description: MOSFET N-CH 600V 9.2A TO220AB
Drain to Source Voltage (Vdss): 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 5.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V

Lieferzeit 21-28 Tag (e)
|
IRF9630PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
auf Bestellung 940 Stücke Description: MOSFET P-CH 200V 6.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole

Lieferzeit 21-28 Tag (e)
|
IRF9620PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.5A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 800 Stücke Description: MOSFET P-CH 200V 3.5A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole

Lieferzeit 21-28 Tag (e)
|
IRF9610PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
FET Type: P-Channel
Packaging: Tube
Technology: MOSFET (Metal Oxide)
auf Bestellung 928 Stücke Description: MOSFET P-CH 200V 1.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
FET Type: P-Channel
Packaging: Tube
Technology: MOSFET (Metal Oxide)

Lieferzeit 21-28 Tag (e)
|
SQ2308CES-T1_BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 2.3A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 166 Stücke - Preis und Lieferfrist anzeigen
SQ2308CES-T1_BE3 |

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23-3
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 166 Stücke Description: MOSFET N-CH 60V 2.3A SOT23-3
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)

Lieferzeit 21-28 Tag (e)
SI1308EDL-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.5A/1.4A SC70-3
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 1.5A/1.4A SC70-3
Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 15V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SC-70-3
Package / Case: SC-70, SOT-323
IRF624PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 4.4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 1000 Stücke Description: MOSFET N-CH 250V 4.4A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3

Lieferzeit 21-28 Tag (e)
SIHD6N80AE-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 2001 Stücke Description: MOSFET N-CH 800V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Part Status: Active
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube

Lieferzeit 21-28 Tag (e)
auf Bestellung 5999 Stücke - Preis und Lieferfrist anzeigen
IRFBE20PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 1.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 1.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
IRF9520PBF-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 6.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 71 Stücke Description: MOSFET P-CH 100V 6.8A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3

Lieferzeit 21-28 Tag (e)
|
SIZ270DT-T1-GE3 |

Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) MOSFE
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ270
auf Bestellung 6000 Stücke Description: DUAL N-CHANNEL 100-V (D-S) MOSFE
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIZ270

Lieferzeit 21-28 Tag (e)
auf Bestellung 6015 Stücke - Preis und Lieferfrist anzeigen
SIZ270DT-T1-GE3 |

Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) MOSFE
Base Part Number: SIZ270
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 6015 Stücke Description: DUAL N-CHANNEL 100-V (D-S) MOSFE
Base Part Number: SIZ270
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 4.3W (Ta), 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 50V, 845pF @ 50V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix

Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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