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SISS65DN-T1-GE3 SISS65DN-T1-GE3 siss65dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 25.9A/94A PPAK
Base Part Number: SISS65
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 9288 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIRA52ADP-T1-RE3 SIRA52ADP-T1-RE3 sira52adp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 41.6A/131A PPAK
Base Part Number: SIRA52
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 41.6A/131A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIRA52
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Drain to Source Voltage (Vdss): 40V
auf Bestellung 4087 Stücke
Lieferzeit 21-28 Tag (e)
IRF610PBF-BE3 IRF610PBF-BE3 Vishay Siliconix Description: MOSFET N-CH 200V 3.3A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 990 Stücke
Lieferzeit 21-28 Tag (e)
11+ 2.37 EUR
13+ 2.09 EUR
100+ 1.6 EUR
500+ 1.27 EUR
SI2303CDS-T1-BE3 SI2303CDS-T1-BE3 alucapsreach.pdf Vishay Siliconix Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZF906DT-T1-GE3 SIZF906DT-T1-GE3 sizf906dt.pdf Vishay Siliconix Description: MOSFET 2 N-CH 30V 60A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Power - Max: 38W (Tc), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5867 Stücke - Preis und Lieferfrist anzeigen
SQ4850EY-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS903DN-T1-GE3 SIS903DN-T1-GE3 sis903dn.pdf Vishay Siliconix Description: MOSFET DUAL P-CHAN POWERPAK 1212
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET DUAL P-CHAN POWERPAK 1212
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 1481 Stücke
Lieferzeit 21-28 Tag (e)
SIRA99DP-T1-GE3 SIRA99DP-T1-GE3 sira99dp.pdf Vishay Siliconix Description: MOSFET P-CH 30V 47.9A/195A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 10955pF @ 15V
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA99
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG9233EDY-GE3 DG9233EDY-GE3 dg9232e.pdf Vishay Siliconix Description: IC SWITCH DUAL SPST 8SOIC
Base Part Number: DG9233
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
auf Bestellung 1919 Stücke
Lieferzeit 21-28 Tag (e)
SUD20N10-66L-GE3 SUD20N10-66L-GE3 sud20n10-66l.pdf Vishay Siliconix Description: MOSFET N-CH 100V 16.9A TO252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 605 Stücke - Preis und Lieferfrist anzeigen
SQ4920EY-T1_GE3 SQ4920EY-T1_GE3 sq4920ey.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SO
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4920
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 7500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SO
Base Part Number: SQ4920
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 8692 Stücke
Lieferzeit 21-28 Tag (e)
SIR608DP-T1-RE3 SIR608DP-T1-RE3 sir608dp.pdf Vishay Siliconix Description: MOSFET N-CH 45V 51A/208A PPAK
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
Drain to Source Voltage (Vdss): 45V
Base Part Number: SIR608
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 45V 51A/208A PPAK
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR608
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
auf Bestellung 5679 Stücke
Lieferzeit 21-28 Tag (e)
SUM110P06-08L-E3 SUM110P06-08L-E3 73045.pdf Vishay Siliconix Description: MOSFET P-CH 60V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 60V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 122 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
SIHP24N80AE-GE3 SIHP24N80AE-GE3 sihp24n80ae.pdf Vishay Siliconix Description: MOSFET E SERIES TO-220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1836pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Base Part Number: SIHP24
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG9232EDS-T1-GE3 Vishay Siliconix Description: IC SWITCH DUAL SPST SOT23-8
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: DG9232
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH615ADN-T1-GE3 SISH615ADN-T1-GE3 sish615adn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 22.1A/35A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SISH615
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 22.1A/35A PPAK
Base Part Number: SISH615
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 8535 Stücke
Lieferzeit 21-28 Tag (e)
SISS08DN-T1-GE3 SISS08DN-T1-GE3 siss08dn.pdf Vishay Siliconix Description: MOSFET N-CHAN 25 V POWERPAK 1212
Base Part Number: SISS08
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3670pF @ 12.5V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CHAN 25 V POWERPAK 1212
Base Part Number: SISS08
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3670pF @ 12.5V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SQ9407EY-T1_GE3 SQ9407EY-T1_GE3 sq9407ey.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 60V 4.6A 8SO
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQ9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 3.75W (Tc)
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
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Vishay Siliconix Description: MOSFET P-CHANNEL 60V 4.6A 8SO
Base Part Number: SQ9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 3.75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3070 Stücke
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SQ3989EV-T1_GE3 SQ3989EV-T1_GE3 sq3989ev.pdf Vishay Siliconix Description: MOSFET 2 P-CH 30V 2.5A 6TSOP
Base Part Number: SQ3989
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET 2 P-CH 30V 2.5A 6TSOP
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ3989
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
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SIR178DP-T1-RE3 SIR178DP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 20V 100A/430A PPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12430pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 400µOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SIAA40DJ-T1-GE3 SIAA40DJ-T1-GE3 siaa00dj.pdf Vishay Siliconix Description: MOSFET N-CH 40V 30A SC70-6
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIAA40
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CH 40V 30A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19.2W (Tc)
Part Status: Active
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIAA40
Package / Case: PowerPAK® SC-70-6
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auf Bestellung 8931 Stücke - Preis und Lieferfrist anzeigen
SQ2325ES-T1_GE3 SQ2325ES-T1_GE3 sq2325es.pdf Vishay Siliconix Description: MOSFET P-CH 150V 840MA TO236
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: TO-236 (SOT-23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SQ2325
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4961EY-T1_GE3 SQ4961EY-T1_GE3 sq4961ey.pdf Vishay Siliconix Description: MOSFET DUAL P-CHAN 60V SO8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 sihj8n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 8A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
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Lieferzeit 21-28 Tag (e)
5+ 5.59 EUR
10+ 5.01 EUR
IRFR120TRPBF-BE3 IRFR120TRPBF-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2303ES-T1_GE3 SQ2303ES-T1_GE3 sq2303es.pdf Vishay Siliconix Description: MOSFET P-CHAN 30V SOT23
Base Part Number: SQ2303
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SI7145DP-T1-GE3 SI7145DP-T1-GE3 si7145dp.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Base Part Number: SI7145
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
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Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Base Part Number: SI7145
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SQJA36EP-T1_GE3 SQJA36EP-T1_GE3 sqja36ep.pdf Vishay Siliconix Description: MOSFET N-CH 40 V PPAK SO-8L
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6636pF @ 25V
Power Dissipation (Max): 500W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA36
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40 V PPAK SO-8L
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6636pF @ 25V
Power Dissipation (Max): 500W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA36
auf Bestellung 2523 Stücke
Lieferzeit 21-28 Tag (e)
SIZF300DT-T1-GE3 SIZF300DT-T1-GE3 sizf300dt.pdf Vishay Siliconix Description: MOSFET DUAL N-CHAN 30V PPAIR 3X3
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIZF300
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
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Vishay Siliconix Description: MOSFET DUAL N-CHAN 30V PPAIR 3X3
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIZF300
Supplier Device Package: 8-PowerPair® (6x5)
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SQD100N02-3M5L_GE3 SQD100N02-3M5L_GE3 sqd100n02-3m5l.pdf Vishay Siliconix Description: MOSFET N-CH 20V 100A TO252AA
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 100A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SQM100N02-3M5L_GE3 SQM100N02-3M5L_GE3 sqm100n02-3m5l.pdf Vishay Siliconix Description: MOSFET N-CH 20V 100A TO263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 10V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM100N
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 100A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 10V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM100N
auf Bestellung 775 Stücke
Lieferzeit 21-28 Tag (e)
SUG80050E-GE3 SUG80050E-GE3 sug80050e.pdf Vishay Siliconix Description: MOSFET N-CH 150V 100A TO247AC
Base Part Number: SUG80050
Manufacturer: Vishay Siliconix
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 75V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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Lieferzeit 21-28 Tag (e)
IRFR9014TRPBF-BE3 IRFR9014TRPBF-BE3 Vishay Siliconix Description: MOSFET P-CH 60V 5.1A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFL9110TRPBF-BE3 IRFL9110TRPBF-BE3 Vishay Siliconix Description: MOSFET P-CH 100V 1.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ202EP-T1_GE3 SQJ202EP-T1_GE3 sqj202ep.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V 20A/60A PPAK SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Base Part Number: SQJ202
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 12V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4401FDY-T1-GE3 SI4401FDY-T1-GE3 si4401fdy.pdf Vishay Siliconix Description: MOSFET P-CH 40V 9.9A/14A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIDR870ADP-T1-GE3 SIDR870ADP-T1-GE3 sidr870adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 95A PPAK SO-8DC
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE882DF-T1-GE3 SIE882DF-T1-GE3 sie882df.pdf Vishay Siliconix Description: MOSFET N-CH 25V 60A 10POLARPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 12.5V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE882
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 25V 60A 10POLARPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 12.5V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE882
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Lieferzeit 21-28 Tag (e)
SIZF920DT-T1-GE3 SIZF920DT-T1-GE3 sizf920dt.pdf Vishay Siliconix Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)
Base Part Number: SIZF920
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)
Base Part Number: SIZF920
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Lieferzeit 21-28 Tag (e)
DG201AAK DG201A_MIL202_MIL.pdf Vishay Siliconix Description: SPST, 4 FUNC, 1 CHANNEL, CMOS, C
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 600ns, 450ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 100kHz
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±15V
Number of Circuits: 4
Supplier Device Package: 16-CERDIP
On-State Resistance (Max): 175Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Packaging: Bulk
auf Bestellung 613 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9930 Stücke - Preis und Lieferfrist anzeigen
3+ 246.84 EUR
DG2788ADN-T1-E4 DG2788ADN-T1-E4 dg2788a.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT MINIQFN16
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -245pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 338MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZF906DT-T1-GE3 SIZF906DT-T1-GE3 sizf906dt.pdf Vishay Siliconix Description: MOSFET 2 N-CH 30V 60A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Power - Max: 38W (Tc), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
DG2524DN-T1-GE4 DG2524DN-T1-GE4 dg2523.pdf Vishay Siliconix Description: 0.4 LOW RESISTANCE AND CAPACITAN
-3db Bandwidth: 310MHz
On-State Resistance (Max): 550mOhm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14.5pF
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -89dB @ 100kHz
Charge Injection: -19pC
Voltage - Supply, Dual (V±): 1.8V ~ 5.5V
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD10N30-330H_GE3 SQD10N30-330H_GE3 sqd10n30-330h.pdf Vishay Siliconix Description: MOSFET N-CH 300V 10A TO252AA
Base Part Number: SQD10N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET N-CH 300V 10A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQD10N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
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SISH116DN-T1-GE3 SISH116DN-T1-GE3 sish116dn.pdf Vishay Siliconix Description: MOSFET N-CH 40V PPAK 1212-8SH
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH11
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Vishay Siliconix Description: MOSFET N-CH 40V PPAK 1212-8SH
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH11
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Lieferzeit 21-28 Tag (e)
SISS22LDN-T1-GE3 SISS22LDN-T1-GE3 siss22ldn.pdf Vishay Siliconix Description: MOSFET N-CH 60V 25.5A/92.5A PPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc)
FET Type: N-Channel
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 25.5A/92.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SIHA105N60EF-GE3 siha105n60ef.pdf Vishay Siliconix Description: MOSFET E SERIES THIN-LEAD TO-220
Base Part Number: SIHA105
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHB105N60EF-GE3 SIHB105N60EF-GE3 sihb105n60ef.pdf Vishay Siliconix Description: MOSFET EF SERIES D2PAK TO-263
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHB105
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUD50N02-06P-GE3 Vishay Siliconix Description: MOSFET N-CH 20V 50A TO252AA
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N02-09P-GE3 SUD50N02-09P-GE3 SUD50N02-09P.pdf Vishay Siliconix Description: MOSFET N-CH 20V 20A TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640PBF-BE3 IRL640PBF-BE3 Vishay Siliconix Description: MOSFET N-CH 200V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 554 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.32 EUR
10+ 5.66 EUR
100+ 4.55 EUR
500+ 3.73 EUR
SIP2802DY-T1-E3 SIP2802DY-T1-E3 sip2800.pdf Vishay Siliconix Description: IC REG CTRLR PWM CM 8SOIC
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Control Features: Frequency Control
Fault Protection: Current Limiting
Frequency - Switching: 46kHz
Duty Cycle: 99%
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Voltage - Start Up: 12.5V
Topology: Flyback
Internal Switch(s): No
Output Isolation: Isolated
Part Status: Active
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: IC REG CTRLR PWM CM 8SOIC
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Control Features: Frequency Control
Fault Protection: Current Limiting
Frequency - Switching: 46kHz
Duty Cycle: 99%
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Voltage - Start Up: 12.5V
Topology: Flyback
Internal Switch(s): No
Output Isolation: Isolated
Part Status: Active
Packaging: Cut Tape (CT)
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SIP2204EMP-T1-GE4 SIP2204EMP-T1-GE4 sip2204.pdf Vishay Siliconix Description: QUAD CHANNEL, HIGH FREQUENCY POW
Voltage - Supply: 10V ~ 24V
Current - Peak Output: 2A
Current - Output / Channel: 500mA
Rds On (Typ): 350mOhm LS, 550mOhm HS
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIP220
Supplier Device Package: 32-QFN (5x5)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG1413EEQ-T1-GE4 DG1413EEQ-T1-GE4 dg1411e.pdf Vishay Siliconix Description: IC SWITCH SPST QUAD 16TSSOP
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ7415AENW-T1_GE3 SQ7415AENW-T1_GE3 sq7415aenw.pdf Vishay Siliconix Description: MOSFET P-CH 60V 16A POWERPAK1212
Base Part Number: SQ7415
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
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Vishay Siliconix Description: MOSFET P-CH 60V 16A POWERPAK1212
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQ7415
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Lieferzeit 21-28 Tag (e)
SIDR668DP-T1-GE3 SIDR668DP-T1-GE3 sidr668dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC431BED-T1-GE3 SIC431BED-T1-GE3 sic431.pdf Vishay Siliconix Description: MICROBUCK POWERSAVE
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC461ED-T1-GE3 SIC461ED-T1-GE3 sic46x.pdf Vishay Siliconix Description: IC REG BUCK ADJ 10A MLP55-27
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Part Status: Active
Voltage - Input (Min): 4.5V
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 10A
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3000+ 8.01 EUR
Vishay Siliconix Description: IC REG BUCK ADJ 10A MLP55-27
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 10A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 55.2V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
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2+ 13.62 EUR
10+ 12.24 EUR
25+ 11.57 EUR
100+ 10.03 EUR
250+ 9.52 EUR
500+ 8.54 EUR
1000+ 8.01 EUR
SISS30LDN-T1-GE3 SISS30LDN-T1-GE3 siss30ldn.pdf Vishay Siliconix Description: MOSFET N-CH 80V 16A/55.5A PPAK
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SISS30
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5515CDC-T1-E3 SI5515CDC-T1-E3 si5515cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SIJA72ADP-T1-GE3 SIJA72ADP-T1-GE3 sija72adp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 27.9A/96A PPAK
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.9A (Ta), 96A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIJA72
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 20V
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SISS65DN-T1-GE3 siss65dn.pdf
SISS65DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 25.9A/94A PPAK
Base Part Number: SISS65
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4930pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.9A (Ta), 94A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIRA52ADP-T1-RE3 sira52adp.pdf
SIRA52ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/131A PPAK
Base Part Number: SIRA52
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SIRA52ADP-T1-RE3 sira52adp.pdf
SIRA52ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/131A PPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIRA52
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
Drain to Source Voltage (Vdss): 40V
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IRF610PBF-BE3
IRF610PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
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Lieferzeit 21-28 Tag (e)
11+ 2.37 EUR
13+ 2.09 EUR
100+ 1.6 EUR
500+ 1.27 EUR
SI2303CDS-T1-BE3 alucapsreach.pdf
SI2303CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZF906DT-T1-GE3 sizf906dt.pdf
SIZF906DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 60A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Power - Max: 38W (Tc), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Tape & Reel (TR)
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SQ4850EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIS903DN-T1-GE3 sis903dn.pdf
SIS903DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL P-CHAN POWERPAK 1212
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIS903DN-T1-GE3 sis903dn.pdf
SIS903DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL P-CHAN POWERPAK 1212
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)
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SIRA99DP-T1-GE3 sira99dp.pdf
SIRA99DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 47.9A/195A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 10955pF @ 15V
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA99
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG9233EDY-GE3 dg9232e.pdf
DG9233EDY-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 8SOIC
Base Part Number: DG9233
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -108dB @ 1MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3.8pF
Charge Injection: -0.78pC
Switch Time (Ton, Toff) (Max): 75ns, 50ns
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 400mOhm
On-State Resistance (Max): 25Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Tube
auf Bestellung 1919 Stücke
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SUD20N10-66L-GE3 sud20n10-66l.pdf
SUD20N10-66L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.9A TO252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQ4920EY-T1_GE3 sq4920ey.pdf
SQ4920EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4920
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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SQ4920EY-T1_GE3 sq4920ey.pdf
SQ4920EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Base Part Number: SQ4920
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4.4W
Input Capacitance (Ciss) (Max) @ Vds: 1465pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SIR608DP-T1-RE3 sir608dp.pdf
SIR608DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 51A/208A PPAK
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
Drain to Source Voltage (Vdss): 45V
Base Part Number: SIR608
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIR608DP-T1-RE3 sir608dp.pdf
SIR608DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 45V 51A/208A PPAK
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIR608
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 208A (Tc)
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SUM110P06-08L-E3 73045.pdf
SUM110P06-08L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUM110P06-08L-E3 73045.pdf
SUM110P06-08L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES TO-220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1836pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Base Part Number: SIHP24
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG9232EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST SOT23-8
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: DG9232
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH615ADN-T1-GE3 sish615adn.pdf
SISH615ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 22.1A/35A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SISH615
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
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SISH615ADN-T1-GE3 sish615adn.pdf
SISH615ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 22.1A/35A PPAK
Base Part Number: SISH615
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SISS08DN-T1-GE3 siss08dn.pdf
SISS08DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25 V POWERPAK 1212
Base Part Number: SISS08
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3670pF @ 12.5V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SISS08DN-T1-GE3 siss08dn.pdf
SISS08DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25 V POWERPAK 1212
Base Part Number: SISS08
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3670pF @ 12.5V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 53.9A (Ta), 195.5A (Tc)
Drain to Source Voltage (Vdss): 25V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SQ9407EY-T1_GE3 sq9407ey.pdf
SQ9407EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 4.6A 8SO
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQ9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 3.75W (Tc)
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
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SQ9407EY-T1_GE3 sq9407ey.pdf
SQ9407EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 4.6A 8SO
Base Part Number: SQ9407
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Power Dissipation (Max): 3.75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SQ3989EV-T1_GE3 sq3989ev.pdf
SQ3989EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CH 30V 2.5A 6TSOP
Base Part Number: SQ3989
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SQ3989EV-T1_GE3 sq3989ev.pdf
SQ3989EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CH 30V 2.5A 6TSOP
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ3989
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
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SIR178DP-T1-RE3
SIR178DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A/430A PPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12430pF @ 10V
Vgs (Max): +12V, -8V
Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 400µOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta), 430A (Tc)
Drain to Source Voltage (Vdss): 20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SIAA40DJ-T1-GE3 siaa00dj.pdf
SIAA40DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A SC70-6
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIAA40
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
Part Status: Active
Packaging: Tape & Reel (TR)
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SIAA40DJ-T1-GE3 siaa00dj.pdf
SIAA40DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19.2W (Tc)
Part Status: Active
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIAA40
Package / Case: PowerPAK® SC-70-6
auf Bestellung 3823 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11931 Stücke - Preis und Lieferfrist anzeigen
SQ2325ES-T1_GE3 sq2325es.pdf
SQ2325ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 840MA TO236
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 50V
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Supplier Device Package: TO-236 (SOT-23)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SQ2325
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4961EY-T1_GE3 sq4961ey.pdf
SQ4961EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL P-CHAN 60V SO8
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHJ8N60E-T1-GE3 sihj8n60e.pdf
SIHJ8N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
auf Bestellung 33 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.59 EUR
10+ 5.01 EUR
IRFR120TRPBF-BE3
IRFR120TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2303ES-T1_GE3 sq2303es.pdf
SQ2303ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 30V SOT23
Base Part Number: SQ2303
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6596 Stücke - Preis und Lieferfrist anzeigen
SI7145DP-T1-GE3 si7145dp.pdf
SI7145DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Base Part Number: SI7145
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 11986 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 41988 Stücke - Preis und Lieferfrist anzeigen
SI7145DP-T1-GE3 si7145dp.pdf
SI7145DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15660pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 413nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
Base Part Number: SI7145
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 11986 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 41988 Stücke - Preis und Lieferfrist anzeigen
SQJA36EP-T1_GE3 sqja36ep.pdf
SQJA36EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40 V PPAK SO-8L
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6636pF @ 25V
Power Dissipation (Max): 500W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA36
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2523 Stücke - Preis und Lieferfrist anzeigen
SQJA36EP-T1_GE3 sqja36ep.pdf
SQJA36EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40 V PPAK SO-8L
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6636pF @ 25V
Power Dissipation (Max): 500W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJA36
auf Bestellung 2523 Stücke
Lieferzeit 21-28 Tag (e)
SIZF300DT-T1-GE3 sizf300dt.pdf
SIZF300DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 30V PPAIR 3X3
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIZF300
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6025 Stücke - Preis und Lieferfrist anzeigen
SIZF300DT-T1-GE3 sizf300dt.pdf
SIZF300DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 30V PPAIR 3X3
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 3150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 62nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIZF300
Supplier Device Package: 8-PowerPair® (6x5)
auf Bestellung 5925 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3100 Stücke - Preis und Lieferfrist anzeigen
SQD100N02-3M5L_GE3 sqd100n02-3m5l.pdf
SQD100N02-3M5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A TO252AA
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1805 Stücke - Preis und Lieferfrist anzeigen
SQD100N02-3M5L_GE3 sqd100n02-3m5l.pdf
SQD100N02-3M5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1805 Stücke
Lieferzeit 21-28 Tag (e)
SQM100N02-3M5L_GE3 sqm100n02-3m5l.pdf
SQM100N02-3M5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A TO263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 10V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM100N
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 775 Stücke - Preis und Lieferfrist anzeigen
SQM100N02-3M5L_GE3 sqm100n02-3m5l.pdf
SQM100N02-3M5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 100A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 10V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM100N
auf Bestellung 775 Stücke
Lieferzeit 21-28 Tag (e)
SUG80050E-GE3 sug80050e.pdf
SUG80050E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 100A TO247AC
Base Part Number: SUG80050
Manufacturer: Vishay Siliconix
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6250pF @ 75V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 450 Stücke
Lieferzeit 21-28 Tag (e)
IRFR9014TRPBF-BE3
IRFR9014TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFL9110TRPBF-BE3
IRFL9110TRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 1.1A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 660mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ202EP-T1_GE3 sqj202ep.pdf
SQJ202EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A/60A PPAK SO
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Base Part Number: SQJ202
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W, 48W
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 12V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4201 Stücke - Preis und Lieferfrist anzeigen
SI4401FDY-T1-GE3 si4401fdy.pdf
SI4401FDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 9.9A/14A 8SO
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 20V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4401
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 760 Stücke - Preis und Lieferfrist anzeigen
SIDR870ADP-T1-GE3 sidr870adp.pdf
SIDR870ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 95A PPAK SO-8DC
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIE882DF-T1-GE3 sie882df.pdf
SIE882DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A 10POLARPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 12.5V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE882
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIE882DF-T1-GE3 sie882df.pdf
SIE882DF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A 10POLARPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 12.5V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 10-PolarPAK® (L)
Package / Case: 10-PolarPAK® (L)
Base Part Number: SIE882
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Lieferzeit 21-28 Tag (e)
SIZF920DT-T1-GE3 sizf920dt.pdf
SIZF920DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)
Base Part Number: SIZF920
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SIZF920DT-T1-GE3 sizf920dt.pdf
SIZF920DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR 6X5
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)
Base Part Number: SIZF920
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DG201AAK DG201A_MIL202_MIL.pdf
Hersteller: Vishay Siliconix
Description: SPST, 4 FUNC, 1 CHANNEL, CMOS, C
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 600ns, 450ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 100kHz
Charge Injection: 20pC
Voltage - Supply, Dual (V±): ±15V
Number of Circuits: 4
Supplier Device Package: 16-CERDIP
On-State Resistance (Max): 175Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Packaging: Bulk
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Lieferzeit 21-28 Tag (e)
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3+ 246.84 EUR
DG2788ADN-T1-E4 dg2788a.pdf
DG2788ADN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT MINIQFN16
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -245pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 338MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZF906DT-T1-GE3 sizf906dt.pdf
SIZF906DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 60A POWERPAIR
Supplier Device Package: 8-PowerPair® (6x5)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Power - Max: 38W (Tc), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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DG2524DN-T1-GE4 dg2523.pdf
DG2524DN-T1-GE4
Hersteller: Vishay Siliconix
Description: 0.4 LOW RESISTANCE AND CAPACITAN
-3db Bandwidth: 310MHz
On-State Resistance (Max): 550mOhm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14.5pF
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -89dB @ 100kHz
Charge Injection: -19pC
Voltage - Supply, Dual (V±): 1.8V ~ 5.5V
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD10N30-330H_GE3 sqd10n30-330h.pdf
SQD10N30-330H_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 300V 10A TO252AA
Base Part Number: SQD10N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SQD10N30-330H_GE3 sqd10n30-330h.pdf
SQD10N30-330H_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 300V 10A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQD10N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
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SISH116DN-T1-GE3 sish116dn.pdf
SISH116DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V PPAK 1212-8SH
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH11
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SISH116DN-T1-GE3 sish116dn.pdf
SISH116DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V PPAK 1212-8SH
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH11
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SISS22LDN-T1-GE3 siss22ldn.pdf
SISS22LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25.5A/92.5A PPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc)
FET Type: N-Channel
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SISS22LDN-T1-GE3 siss22ldn.pdf
SISS22LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25.5A/92.5A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SIHA105N60EF-GE3 siha105n60ef.pdf
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES THIN-LEAD TO-220
Base Part Number: SIHA105
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHB105N60EF-GE3 sihb105n60ef.pdf
SIHB105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET EF SERIES D2PAK TO-263
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHB105
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUD50N02-06P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A TO252AA
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50N02-09P-GE3 SUD50N02-09P.pdf
SUD50N02-09P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A TO252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL640PBF-BE3
IRL640PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
auf Bestellung 554 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.32 EUR
10+ 5.66 EUR
100+ 4.55 EUR
500+ 3.73 EUR
SIP2802DY-T1-E3 sip2800.pdf
SIP2802DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG CTRLR PWM CM 8SOIC
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Control Features: Frequency Control
Fault Protection: Current Limiting
Frequency - Switching: 46kHz
Duty Cycle: 99%
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Voltage - Start Up: 12.5V
Topology: Flyback
Internal Switch(s): No
Output Isolation: Isolated
Part Status: Active
Packaging: Tape & Reel (TR)
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SIP2802DY-T1-E3 sip2800.pdf
SIP2802DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG CTRLR PWM CM 8SOIC
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Operating Temperature: -40°C ~ 85°C (TA)
Control Features: Frequency Control
Fault Protection: Current Limiting
Frequency - Switching: 46kHz
Duty Cycle: 99%
Voltage - Supply (Vcc/Vdd): 8.3V ~ 12V
Voltage - Start Up: 12.5V
Topology: Flyback
Internal Switch(s): No
Output Isolation: Isolated
Part Status: Active
Packaging: Cut Tape (CT)
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SIP2204EMP-T1-GE4 sip2204.pdf
SIP2204EMP-T1-GE4
Hersteller: Vishay Siliconix
Description: QUAD CHANNEL, HIGH FREQUENCY POW
Voltage - Supply: 10V ~ 24V
Current - Peak Output: 2A
Current - Output / Channel: 500mA
Rds On (Typ): 350mOhm LS, 550mOhm HS
Technology: Power MOSFET
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIP220
Supplier Device Package: 32-QFN (5x5)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG1413EEQ-T1-GE4 dg1411e.pdf
DG1413EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST QUAD 16TSSOP
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ7415AENW-T1_GE3 sq7415aenw.pdf
SQ7415AENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 16A POWERPAK1212
Base Part Number: SQ7415
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7964 Stücke - Preis und Lieferfrist anzeigen
SQ7415AENW-T1_GE3 sq7415aenw.pdf
SQ7415AENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 16A POWERPAK1212
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 53W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1385pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQ7415
auf Bestellung 7964 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIDR668DP-T1-GE3 sidr668dp.pdf
SIDR668DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC431BED-T1-GE3 sic431.pdf
SIC431BED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBUCK POWERSAVE
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC461ED-T1-GE3 sic46x.pdf
SIC461ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 10A MLP55-27
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Part Status: Active
Voltage - Input (Min): 4.5V
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 10A
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Lieferzeit 21-28 Tag (e)
auf Bestellung 4456 Stücke - Preis und Lieferfrist anzeigen
3000+ 8.01 EUR
SIC461ED-T1-GE3 sic46x.pdf
SIC461ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 10A MLP55-27
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 10A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 55.2V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 60V
Frequency - Switching: 100kHz ~ 2MHz
Output Configuration: Positive
auf Bestellung 4448 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3008 Stücke - Preis und Lieferfrist anzeigen
2+ 13.62 EUR
10+ 12.24 EUR
25+ 11.57 EUR
100+ 10.03 EUR
250+ 9.52 EUR
500+ 8.54 EUR
1000+ 8.01 EUR
SISS30LDN-T1-GE3 siss30ldn.pdf
SISS30LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 16A/55.5A PPAK
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 55.5A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SISS30
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5515CDC-T1-E3 si5515cd.pdf
SI5515CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2352 Stücke - Preis und Lieferfrist anzeigen
SI5515CDC-T1-E3 si5515cd.pdf
SI5515CDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
auf Bestellung 2352 Stücke
Lieferzeit 21-28 Tag (e)
SIJA72ADP-T1-GE3 sija72adp.pdf
SIJA72ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 27.9A/96A PPAK
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.9A (Ta), 96A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIJA72
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 20V
auf Bestellung 2772 Stücke
Lieferzeit 21-28 Tag (e)
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