Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11839) > Seite 98 nach 198
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| 2N4861JTXV02 | Vishay Siliconix |
Description: JFET N-CH TO206AA Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5114-E3 | Vishay Siliconix |
Description: JFET P-CH TO206AA Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5114JAN02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5114JTVL02 | Vishay Siliconix |
 Description: JFET P-CH TO206AAPart Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5114JTX02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5114JTXL02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5114JTXV02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube Part Status: Obsolete Supplier Device Package: TO-206AA (TO-18) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5115-E3 | Vishay Siliconix |
Description: JFET P-CH TO206AA Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5115JAN02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5115JTVL02 | Vishay Siliconix |
Description: JFET P-CH 30V TO-18 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5115JTX02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5115JTXL02 | Vishay Siliconix | Description: JFET P-CH 30V TO-18 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5115JTXV02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5116-E3 | Vishay Siliconix |
Description: JFET P-CH TO206AA Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube Supplier Device Package: TO-206AA (TO-18) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5116JAN02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5116JTVL02 | Vishay Siliconix |
Description: JFET P-CH TO206AA Supplier Device Package: TO-206AA (TO-18) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5116JTX02 | Vishay Siliconix |
Description: JFET P-CH 30V TO-18 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5116JTXL02 | Vishay Siliconix |
Description: JFET P-CH 30V TO-18 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5116JTXV02 | Vishay Siliconix |
Description: JFET P-CH 30V TO-18 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5432 | Vishay Siliconix |
Description: JFET N-CH 25V TO-52 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5432-2 | Vishay Siliconix |
Description: JFET N-CH 25V TO206AC Packaging: Tube Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA Power - Max: 300 mW Supplier Device Package: TO-206AC (TO-52) Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AC, TO-52-3 Metal Can |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5432-E3 | Vishay Siliconix |
Description: JFET N-CH 25V TO-52 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5433 | Vishay Siliconix |
Description: JFET N-CH 25V TO206AC FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AC, TO-52-3 Metal Can Packaging: Tube Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA Power - Max: 300 mW Part Status: Obsolete Supplier Device Package: TO-206AC (TO-52) Voltage - Breakdown (V(BR)GSS): 25 V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5433-2 | Vishay Siliconix |
Description: JFET N-CH 25V TO206AC Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-206AC (TO-52) Part Status: Obsolete Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5433-E3 | Vishay Siliconix |
Description: JFET N-CH 25V TO206AC Packaging: Tube Package / Case: TO-206AC, TO-52-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: TO-206AC (TO-52) Part Status: Obsolete Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 2N5545JTX01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5545JTXL01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5545JTXV01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5546JTX01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5546JTXL01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5546JTXV01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5547JTX01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5547JTXL01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 2N5547JTXV01 | Vishay Siliconix | Description: JFET N-CH 50V TO-71 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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2N6660-2 | Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6660-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6660JTVP02 | Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6660JTX02 | Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Packaging: Tube Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-205AD (TO-39) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N6660JTXL02 | Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) Qualification: MIL-PRF-19500 Grade: Military FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-205AD (TO-39) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N6660JTXP02 | Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Qualification: MIL-PRF-19500 Grade: Military Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-205AD (TO-39) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6660JTXV02 | Vishay Siliconix |
Description: MOSFET N-CH 60V 990MA TO205AD Qualification: MIL-PRF-19500 Grade: Military Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-205AD (TO-39) Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 990mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N6661-2 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6661-E3 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6661JAN02 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Qualification: MIL-PRF-19500 Grade: Military Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N6661JTVP02 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Qualification: MIL-PRF-19500 Grade: Military Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6661JTX02 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Qualification: MIL-PRF-19500 Grade: Military Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6661JTXL02 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Qualification: MIL-PRF-19500 Grade: Military Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2N6661JTXP02 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Qualification: MIL-PRF-19500 Grade: Military Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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2N6661JTXV02 | Vishay Siliconix |
Description: MOSFET N-CH 90V 860MA TO39 Qualification: MIL-PRF-19500 Grade: Military Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 90 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-39 Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 725mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 860mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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3N163 | Vishay Siliconix |
Description: MOSFET P-CH 40V 50MA TO72 Packaging: Tube Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Power Dissipation (Max): 375mW (Ta) Vgs(th) (Max) @ Id: 5V @ 10µA Supplier Device Package: TO-72 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3N163-2 | Vishay Siliconix |
Description: MOSFET P-CH 40V 50MA TO72 Packaging: Tube Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Power Dissipation (Max): 375mW (Ta) Vgs(th) (Max) @ Id: 5V @ 10µA Supplier Device Package: TO-72 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3N163-E3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 50MA TO72 Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V Power Dissipation (Max): 375mW (Ta) Vgs(th) (Max) @ Id: 5V @ 10µA Supplier Device Package: TO-72 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH |
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3N164 | Vishay Siliconix |
Description: MOSFET P-CH 30V 50MA TO72 Packaging: Tube Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V Power Dissipation (Max): 375mW (Ta) Vgs(th) (Max) @ Id: 5V @ 10µA Supplier Device Package: TO-72 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DG180AP | Vishay Siliconix |
Description: IC SWITCH DUAL SPST 14-DIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DG181AA | Vishay Siliconix |
Description: IC SW SPST-NCX2 30OHM TO100-10 Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 9pF, 6pF Switch Time (Ton, Toff) (Max): 150ns, 130ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Voltage - Supply, Dual (V±): ±15V Supplier Device Package: TO-100-10 On-State Resistance (Max): 30Ohm Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: TO-100-10 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DG181AA/883 | Vishay Siliconix |
Description: IC SW SPST-NCX2 30OHM TO100-10 Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 9pF, 6pF Switch Time (Ton, Toff) (Max): 150ns, 130ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Voltage - Supply, Dual (V±): ±15V Supplier Device Package: TO-100-10 On-State Resistance (Max): 30Ohm Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: TO-100-10 Metal Can Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DG181AP | Vishay Siliconix |
Description: IC SWITCH DUAL SPST 14-DIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DG181AP/883 | Vishay Siliconix |
Description: IC SWITCH DUAL SPST 14-DIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
DG183AP/883 | Vishay Siliconix |
Description: IC SWITCH DPST-NOX2 10OHM 16DIP On-State Resistance (Max): 10Ohm Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube Switch Time (Ton, Toff) (Max): 400ns, 200ns Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: DPST - NO Voltage - Supply, Dual (V±): ±15V Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 21pF, 17pF Supplier Device Package: 16-DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DG183BP | Vishay Siliconix |
Description: IC SWITCH DUAL DPST 16DIP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 2N4861JTXV02 |
Hersteller: Vishay Siliconix
Description: JFET N-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET N-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5114-E3 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5114JAN02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5114JTVL02 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5114JTX02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5114JTXL02 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5114JTXV02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Description: JFET P-CH TO206AA
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5115-E3 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5115JAN02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Description: JFET P-CH TO206AA
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5115JTVL02 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5115JTX02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5115JTXL02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5115JTXV02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5116-E3 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Description: JFET P-CH TO206AA
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5116JAN02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5116JTVL02 |
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Description: JFET P-CH TO206AA
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5116JTX02 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5116JTXL02 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5116JTXV02 |
|
Hersteller: Vishay Siliconix
Description: JFET P-CH 30V TO-18
Description: JFET P-CH 30V TO-18
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5432 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO-52
Description: JFET N-CH 25V TO-52
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5432-2 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA
Power - Max: 300 mW
Supplier Device Package: TO-206AC (TO-52)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Current - Drain (Idss) @ Vds (Vgs=0): 150 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 3 nA
Power - Max: 300 mW
Supplier Device Package: TO-206AC (TO-52)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5432-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO-52
Description: JFET N-CH 25V TO-52
Produkt ist nicht verfügbar
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5433 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Packaging: Tube
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AC (TO-52)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Description: JFET N-CH 25V TO206AC
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Packaging: Tube
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AC (TO-52)
Voltage - Breakdown (V(BR)GSS): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5433-2 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5433-E3 |
|
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Description: JFET N-CH 25V TO206AC
Packaging: Tube
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-206AC (TO-52)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 3 V @ 3 nA
Current - Drain (Idss) @ Vds (Vgs=0): 100 mA @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N5545JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5545JTXL01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5545JTXV01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5546JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5546JTXL01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5546JTXV01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5547JTX01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5547JTXL01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N5547JTXV01 |
Hersteller: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Description: JFET N-CH 50V TO-71
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N6660-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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| 2N6660-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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| 2N6660JTVP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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| 2N6660JTX02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
Description: MOSFET N-CH 60V 990MA TO205AD
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-205AD (TO-39)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6660JTXL02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Qualification: MIL-PRF-19500
Grade: Military
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Description: MOSFET N-CH 60V 990MA TO205AD
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
Qualification: MIL-PRF-19500
Grade: Military
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6660JTXP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Qualification: MIL-PRF-19500
Grade: Military
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Description: MOSFET N-CH 60V 990MA TO205AD
Qualification: MIL-PRF-19500
Grade: Military
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N6660JTXV02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 990MA TO205AD
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Description: MOSFET N-CH 60V 990MA TO205AD
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-205AD (TO-39)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6661-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Description: MOSFET N-CH 90V 860MA TO39
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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Stück im Wert von UAH
| 2N6661-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Description: MOSFET N-CH 90V 860MA TO39
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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Stück im Wert von UAH
| 2N6661JAN02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6661JTVP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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Stück im Wert von UAH
| 2N6661JTX02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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Stück im Wert von UAH
| 2N6661JTXL02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N6661JTXP02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 2N6661JTXV02 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 90V 860MA TO39
Qualification: MIL-PRF-19500
Grade: Military
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 90 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-39
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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| 3N163 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Produkt ist nicht verfügbar
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| 3N163-2 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Produkt ist nicht verfügbar
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| 3N163-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Description: MOSFET P-CH 40V 50MA TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Produkt ist nicht verfügbar
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| 3N164 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Description: MOSFET P-CH 30V 50MA TO72
Packaging: Tube
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
Power Dissipation (Max): 375mW (Ta)
Vgs(th) (Max) @ Id: 5V @ 10µA
Supplier Device Package: TO-72
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Produkt ist nicht verfügbar
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| DG180AP |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
Description: IC SWITCH DUAL SPST 14-DIP
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| DG181AA |
|
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX2 30OHM TO100-10
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 30Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: TO-100-10 Metal Can
Packaging: Tube
Description: IC SW SPST-NCX2 30OHM TO100-10
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 30Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: TO-100-10 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
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| DG181AA/883 |
|
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX2 30OHM TO100-10
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 30Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: TO-100-10 Metal Can
Packaging: Tube
Description: IC SW SPST-NCX2 30OHM TO100-10
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 9pF, 6pF
Switch Time (Ton, Toff) (Max): 150ns, 130ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: TO-100-10
On-State Resistance (Max): 30Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: TO-100-10 Metal Can
Packaging: Tube
Produkt ist nicht verfügbar
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| DG181AP |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
Description: IC SWITCH DUAL SPST 14-DIP
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| DG181AP/883 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPST 14-DIP
Description: IC SWITCH DUAL SPST 14-DIP
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| DG183AP/883 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DPST-NOX2 10OHM 16DIP
On-State Resistance (Max): 10Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Voltage - Supply, Dual (V±): ±15V
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Supplier Device Package: 16-DIP
Description: IC SWITCH DPST-NOX2 10OHM 16DIP
On-State Resistance (Max): 10Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Switch Time (Ton, Toff) (Max): 400ns, 200ns
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO
Voltage - Supply, Dual (V±): ±15V
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 21pF, 17pF
Supplier Device Package: 16-DIP
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| DG183BP |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPST 16DIP
Description: IC SWITCH DUAL DPST 16DIP
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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