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SI7615DN-T1-GE3 SI7615DN-T1-GE3 SI7615DN.pdf Vishay Siliconix Description: MOSFET P-CH 20V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
auf Bestellung 2900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5904 Stücke - Preis und Lieferfrist anzeigen
IRLZ14STRLPBF IRLZ14STRLPBF sihlz14s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
auf Bestellung 1450 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 143 Stücke - Preis und Lieferfrist anzeigen
SI3442CDV-T1-GE3 SI3442CDV-T1-GE3 si3442cdv.pdf Vishay Siliconix Description: MOSFET N-CH 20V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-TSOP
auf Bestellung 2314 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2314 Stücke - Preis und Lieferfrist anzeigen
DG452EY-T1-E3 DG452EY-T1-E3 dg451.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Charge Injection: 22pC
Base Part Number: DG452
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1337 Stücke
Lieferzeit 21-28 Tag (e)
SI1427EDH-T1-GE3 SI1427EDH-T1-GE3 si1427ed.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2A SOT-363
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1427
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6177 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22 Stücke - Preis und Lieferfrist anzeigen
SIR426DP-T1-GE3 SIR426DP-T1-GE3 sir426dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Base Part Number: SIR426
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
FET Type: N-Channel
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
auf Bestellung 5646 Stücke
Lieferzeit 21-28 Tag (e)
SIC403BCD-T1-GE3 SIC403BCD-T1-GE3 sic403abcd.pdf Vishay Siliconix Description: IC REG DL BUCK/LNR SYNC MLP55-32
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
Number of Outputs: 2
Frequency - Switching: 200kHz ~ 1MHz
Base Part Number: SIC403
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2724 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1724 Stücke - Preis und Lieferfrist anzeigen
SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 si9926cd.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 8A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI9926
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
auf Bestellung 24204 Stücke
Lieferzeit 21-28 Tag (e)
SIS413DN-T1-GE3 SIS413DN-T1-GE3 sis413dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 18A PPAK 1212-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIS413
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
auf Bestellung 3881 Stücke
Lieferzeit 21-28 Tag (e)
SI5442DU-T1-GE3 SI5442DU-T1-GE3 si5442du.pdf Vishay Siliconix Description: MOSFET N-CH 20V 25A PPAK CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5442
Package / Case: PowerPAK® ChipFET™ Single
Supplier Device Package: PowerPAK® ChipFet Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Vgs (Max): ±8V
auf Bestellung 2335 Stücke
Lieferzeit 21-28 Tag (e)
SIR836DP-T1-GE3 SIR836DP-T1-GE3 sir836dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 21A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 1295 Stücke
Lieferzeit 21-28 Tag (e)
SISS27DN-T1-GE3 SISS27DN-T1-GE3 siss27dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 50A PPAK 1212-8S
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Base Part Number: SISS27
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
auf Bestellung 10561 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20810 Stücke - Preis und Lieferfrist anzeigen
SIR470DP-T1-GE3 SIR470DP-T1-GE3 sir470dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIR470
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
auf Bestellung 1858 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12649 Stücke - Preis und Lieferfrist anzeigen
SUM110P06-07L-E3 SUM110P06-07L-E3 sum110p06-07l.pdf Vishay Siliconix Description: MOSFET P-CH 60V 110A D2PAK
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUM110
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
auf Bestellung 5078 Stücke
Lieferzeit 21-28 Tag (e)
SI3443DDV-T1-GE3 SI3443DDV-T1-GE3 si3443ddv.pdf Vishay Siliconix Description: MOSFET P-CHAN 20V TSOP6S
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 15565 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 94 Stücke - Preis und Lieferfrist anzeigen
SI3456DDV-T1-GE3 SI3456DDV-T1-GE3 si3456ddv.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6.3A 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
auf Bestellung 88869 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 34207 Stücke - Preis und Lieferfrist anzeigen
SI3440ADV-T1-GE3 SI3440ADV-T1-GE3 si3440adv.pdf Vishay Siliconix Description: MOSFET N-CH 150V 2.2A 6TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Package / Case: SOT-23-6 Thin, TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 7441 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9867 Stücke - Preis und Lieferfrist anzeigen
SI3429EDV-T1-GE3 SI3429EDV-T1-GE3 si3429edv.pdf Vishay Siliconix Description: MOSFET P-CH 20V 8A/8A 6TSOP
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3429
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4085pF @ 50V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CH 20V 8A/8A 6TSOP
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI3429
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4085pF @ 50V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 12517 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CHAN 20V TSOP6S
Power Dissipation (Max): 4.2W (Tc)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4085pF @ 50V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5685 Stücke
Lieferzeit 21-28 Tag (e)
SI3457CDV-T1-GE3 SI3457CDV-T1-GE3 si3457cdv.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.1A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 2W (Ta), 3W (Tc)
auf Bestellung 9567 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7 Stücke - Preis und Lieferfrist anzeigen
SI3424CDV-T1-GE3 SI3424CDV-T1-GE3 si3424cdv.pdf Vishay Siliconix Description: MOSFET N-CH 30V 8A 6-TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 3453 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14503 Stücke - Preis und Lieferfrist anzeigen
SI3407DV-T1-GE3 SI3407DV-T1-GE3 si3407dv.pdf Vishay Siliconix Description: MOSFET P-CH 20V 8A 6-TSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Power Dissipation (Max): 4.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 3221 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
SQD40P10-40L_GE3 SQD40P10-40L_GE3 sqd40p10-40l.pdf Vishay Siliconix Description: MOSFET P-CHAN 100V TO252
Mounting Type: Surface Mount
Power Dissipation (Max): 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 5540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2954 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21017 Stücke - Preis und Lieferfrist anzeigen
DG419BDQ-T1-E3 DG419BDQ-T1-E3 dg417b.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8MSOP
Base Part Number: DG419
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
auf Bestellung 1006 Stücke
Lieferzeit 21-28 Tag (e)
DG419BDY-T1-E3 DG419BDY-T1-E3 dg417b.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG419
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
auf Bestellung 1192 Stücke
Lieferzeit 21-28 Tag (e)
SIR140DP-T1-RE3 SIR140DP-T1-RE3 sir140dp.pdf Vishay Siliconix Description: MOSFET N-CHAN 25V POWERPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 2.81 EUR
Vishay Siliconix Description: MOSFET N-CH 25V 71.9A/100A PPAK
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Vgs (Max): +20V, -16V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6209 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.54 EUR
10+ 4.96 EUR
100+ 3.99 EUR
500+ 3.28 EUR
1000+ 2.81 EUR
Vishay Siliconix Description: MOSFET N-CHAN 25V POWERPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 8150pF @ 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SQ2309ES-T1_GE3 SQ2309ES-T1_GE3 sq2309es.pdf Vishay Siliconix Description: MOSFET P-CHAN 60V SOT23
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 336mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
Vgs (Max): ±20V
auf Bestellung 17799 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 36803 Stücke - Preis und Lieferfrist anzeigen
SI4156DY-T1-GE3 SI4156DY-T1-GE3 si4156dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 24A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3622 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10781 Stücke - Preis und Lieferfrist anzeigen
SI2324DS-T1-GE3 SI2324DS-T1-GE3 si2324ds.pdf Vishay Siliconix Description: MOSFET N-CH 100V 2.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1196 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16 Stücke - Preis und Lieferfrist anzeigen
SI2343CDS-T1-GE3 SI2343CDS-T1-GE3 si2343cd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.9A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
Vgs (Max): ±20V
auf Bestellung 26815 Stücke
Lieferzeit 21-28 Tag (e)
SIHU5N80AE-GE3 SIHU5N80AE-GE3 sihu5n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.4A TO251AA
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7716ADN-T1-GE3 SI7716ADN-T1-GE3 SI7716ADN.pdf Vishay Siliconix Description: MOSFET N-CH 30V 16A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1259 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10320 Stücke - Preis und Lieferfrist anzeigen
SIR466DP-T1-GE3 SIR466DP-T1-GE3 sir466dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 40A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3550 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 121112 Stücke - Preis und Lieferfrist anzeigen
SI7322DN-T1-GE3 SI7322DN-T1-GE3 si7322dn.pdf Vishay Siliconix Description: MOSFET N-CH 100V 18A 1212-8
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7322
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
auf Bestellung 18327 Stücke
Lieferzeit 21-28 Tag (e)
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SIR440DP-T1-GE3 SIR440DP-T1-GE3 sir440dp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 14830 Stücke
Lieferzeit 21-28 Tag (e)
SI7738DP-T1-GE3 SI7738DP-T1-GE3 si7738dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
auf Bestellung 7152 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6412 Stücke - Preis und Lieferfrist anzeigen
SI1021R-T1-GE3 SI1021R-T1-GE3 71410.pdf Vishay Siliconix Description: MOSFET P-CH 60V 190MA SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
auf Bestellung 36928 Stücke
Lieferzeit 21-28 Tag (e)
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SI5424DC-T1-GE3 SI5424DC-T1-GE3 si5424dc.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2913 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 392 Stücke - Preis und Lieferfrist anzeigen
DG3516DB-T5-E1 dg3516.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 10MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -78dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 12pF
Charge Injection: 1pC
-3db Bandwidth: 300MHz
Switch Time (Ton, Toff) (Max): 45ns, 42ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
On-State Resistance (Max): 2.9Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG3516
Supplier Device Package: 10-Micro Foot® (2x1.5)
Package / Case: 10-WFBGA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 44000 Stücke - Preis und Lieferfrist anzeigen
IRFR9120TRLPBF IRFR9120TRLPBF 91280.pdf Vishay Siliconix Description: MOSFET P-CH 100V 5.6A DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2631 Stücke
Lieferzeit 21-28 Tag (e)
IRLR120TRLPBF IRLR120TRLPBF IRLR(U)120,%20SiHLR(U)120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
auf Bestellung 2949 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2773 Stücke - Preis und Lieferfrist anzeigen
SI1401EDH-T1-GE3 SI1401EDH-T1-GE3 si1401ed.pdf Vishay Siliconix Description: MOSFET P-CH 12V 4A SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 43713 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1814 Stücke - Preis und Lieferfrist anzeigen
SI7658ADP-T1-GE3 SI7658ADP-T1-GE3 si7658adp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1485 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2425 Stücke - Preis und Lieferfrist anzeigen
SI7818DN-T1-E3 SI7818DN-T1-E3 si7818dn.pdf Vishay Siliconix Description: MOSFET N-CH 150V 2.2A 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
auf Bestellung 4449 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2596 Stücke - Preis und Lieferfrist anzeigen
SQJB40EP-T1_GE3 SQJB40EP-T1_GE3 sqjb40ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 636 Stücke
Lieferzeit 21-28 Tag (e)
SI7454DP-T1-E3 SI7454DP-T1-E3 si7454dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2468 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 160 Stücke - Preis und Lieferfrist anzeigen
SQJB68EP-T1_GE3 SQJB68EP-T1_GE3 sqjb68ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 100V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 411 Stücke
Lieferzeit 21-28 Tag (e)
SI2328DS-T1-E3 SI2328DS-T1-E3 si2328ds.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.15A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
auf Bestellung 6540 Stücke
Lieferzeit 21-28 Tag (e)
IRFR224TRPBF IRFR224TRPBF 91271.pdf Vishay Siliconix Description: MOSFET N-CH 250V 3.8A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 138 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 60503 Stücke - Preis und Lieferfrist anzeigen
SIP12109DMP-T1-GE4 SIP12109DMP-T1-GE4 sip12109.pdf Vishay Siliconix Description: IC REG BUCK ADJUSTABLE 4A 16MLP
Frequency - Switching: 400kHz ~ 1.5MHz
Current - Output: 4A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIP12109
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: Yes
auf Bestellung 1028 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
SI4465ADY-T1-GE3 SI4465ADY-T1-GE3 si4465ad.pdf Vishay Siliconix Description: MOSFET P-CH 8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs (Max): ±8V
auf Bestellung 11860 Stücke
Lieferzeit 21-28 Tag (e)
SQJ872EP-T1_GE3 SQJ872EP-T1_GE3 sqj872ep.pdf Vishay Siliconix Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJ872
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Base Part Number: SQJ872
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 25V
Vgs (Max): ±20V
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 5535 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CHAN 150V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: 8-PowerTDFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
auf Bestellung 2215 Stücke
Lieferzeit 21-28 Tag (e)
SI7820DN-T1-GE3 SI7820DN-T1-GE3 72581.pdf Vishay Siliconix Description: MOSFET N-CH 200V 1.7A 1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
auf Bestellung 13732 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR880DP-T1-GE3 SIR880DP-T1-GE3 sir880dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIR880
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
auf Bestellung 2343 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1820 Stücke - Preis und Lieferfrist anzeigen
SQ4840EY-T1_GE3 SQ4840EY-T1_GE3 sq4840ey.pdf Vishay Siliconix Description: MOSFET N-CH 40V 20.7A
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.1W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Base Part Number: SQ4840
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 381 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798205 Stücke - Preis und Lieferfrist anzeigen
SQJQ100E-T1_GE3 SQJQ100E-T1_GE3 sqjq100e.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
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Vishay Siliconix Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 200A POWERPAK8
Package / Case: 8-PowerTDFN
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Type: N-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 14780pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1975 Stücke
Lieferzeit 21-28 Tag (e)
SQ2361ES-T1_GE3 SQ2361ES-T1_GE3 sq2361es.pdf Vishay Siliconix Description: MOSFET P-CH 60V 2.5A SSOT23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 19479 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 55557 Stücke - Preis und Lieferfrist anzeigen
SI1424EDH-T1-GE3 SI1424EDH-T1-GE3 si1424ed.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4A SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
auf Bestellung 4219 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3037 Stücke - Preis und Lieferfrist anzeigen
DG2733EDQ-T1-GE3 DG2733EDQ-T1-GE3 dg2535e_dg2733e.pdf Vishay Siliconix Description: IC ANLG SWITCH DUAL SPDT 10MSOP
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 10-MSOP
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
auf Bestellung 5000 Stücke
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DG507BEN-T1-GE3 DG507BEN-T1-GE3 dg506b.pdf Vishay Siliconix Description: IC MUX ANA DUAL 16/8CH 28PLCC
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG507
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -84dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Charge Injection: 1pC
-3db Bandwidth: 217MHz
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
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DG507BEW-T1-GE3 DG507BEW-T1-GE3 dg506b.pdf Vishay Siliconix Description: IC MUX ANA DUAL 16/8CH 28TSOIC
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG507
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -84dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 250ns, 200ns
-3db Bandwidth: 217MHz
Charge Injection: 1pC
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SIA106DJ-T1-GE3 SIA106DJ-T1-GE3 sia106dj.pdf Vishay Siliconix Description: MOSFET N-CHAN 60V POWERPAK SC-70
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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SI7113ADN-T1-GE3 SI7113ADN-T1-GE3 si7113adn.pdf Vishay Siliconix Description: MOSFET P-CH 100V 10.8A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7113
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
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SIS434DN-T1-GE3 SIS434DN-T1-GE3 sis434dn.pdf Vishay Siliconix Description: MOSFET N-CH 40V 35A PPAK 1212-8
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Base Part Number: SIS434
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
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SIS427EDN-T1-GE3 SIS427EDN-T1-GE3 sis427edn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 50A 1212-8
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SIS427
Package / Case: PowerPAK® 1212-8
FET Type: P-Channel
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI2328DS-T1-GE3 SI2328DS-T1-GE3 si2328ds.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.15A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730mW (Ta)
Vgs (Max): ±20V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SISA35DN-T1-GE3 SISA35DN-T1-GE3 sisa35dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 10A/16A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: MOSFET P-CH 30V PK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
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SUD15N15-95-E3 SUD15N15-95-E3 sud15n15.pdf Vishay Siliconix Description: MOSFET N-CH 150V 15A TO252
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
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SI1050X-T1-GE3 SI1050X-T1-GE3 si1050x.pdf Vishay Siliconix Description: MOSFET N-CH 8V 1.34A SC-89-6
Package / Case: SOT-563, SOT-666
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SC-89-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 236mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SIZ342DT-T1-GE3 SIZ342DT-T1-GE3 siz342dt.pdf Vishay Siliconix Description: MOSFET DL N-CH 30V POWERPAIR3X3
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Base Part Number: SIZ342
Supplier Device Package: 8-Power33 (3x3)
Drain to Source Voltage (Vdss): 30V
Package / Case: 8-PowerWDFN
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
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SUM55P06-19L-E3 SUM55P06-19L-E3 sum55p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 55A D2PAK
Base Part Number: SUM55
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 60V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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SQJ459EP-T1_GE3 SQJ459EP-T1_GE3 sqj459ep.pdf Vishay Siliconix Description: MOSFET P-CH 60V 52A POWERPAKSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SQJ459
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4586pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
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DG303BDY-T1-E3 DG303BDY-T1-E3 71402.pdf Vishay Siliconix Description: IC SWITCH CMOS 14SOIC
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Charge Injection: 8pC
Base Part Number: DG303
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -74dB @ 500kHz
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SIS468DN-T1-GE3 SIS468DN-T1-GE3 sis468dn.pdf Vishay Siliconix Description: MOSFET N-CH 80V 30A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
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SIS447DN-T1-GE3 SIS447DN-T1-GE3 sis447dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 18A POWERPAK1212
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
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Vishay Siliconix Description: MOSFET P-CH 20V 18A POWERPAK1212
Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Vishay Siliconix Description: MOSFET P-CH 20V 18A POWERPAK1212
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
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SIS407ADN-T1-GE3 SIS407ADN-T1-GE3 sis407adn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 18A 1212-8 PPAK
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
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SIZ998DT-T1-GE3 SIZ998DT-T1-GE3 siz998dt.pdf Vishay Siliconix Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Power - Max: 20.2W, 32.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair®
Base Part Number: SIZ998
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Vishay Siliconix Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 20.2W, 32.9W
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIZ980DT-T1-GE3 SIZ980DT-T1-GE3 siz980dt.pdf Vishay Siliconix Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 20W, 66W
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQJ420EP-T1_GE3 SQJ420EP-T1_GE3 sqj420ep.pdf Vishay Siliconix Description: MOSFET N-CH 40V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ420
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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Vishay Siliconix Description: MOSFET N-CH 40V 30A POWERPAKSOL
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
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DG4599EDL-T1-GE3 DG4599EDL-T1-GE3 dg4599e.pdf Vishay Siliconix Description: IC ANALOG SWITCH SC70-6
Number of Circuits: 1
Part Status: Active
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -77dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: SC-70-6
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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3000+ 0.84 EUR
Vishay Siliconix Description: IC ANALOG SWITCH SC70-6
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -77dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: SC-70-6
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15+ 1.79 EUR
25+ 1.68 EUR
100+ 1.37 EUR
250+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.87 EUR
Vishay Siliconix Description: IC ANALOG SWITCH SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 60Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 7pF
Crosstalk: -77dB @ 1MHz
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
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IRF630SPBF IRF630SPBF sih630s.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
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IRF630STRLPBF IRF630STRLPBF sih630s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7615DN-T1-GE3 SI7615DN.pdf
SI7615DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
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IRLZ14STRLPBF sihlz14s.pdf
IRLZ14STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
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SI3442CDV-T1-GE3 si3442cdv.pdf
SI3442CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-TSOP
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DG452EY-T1-E3 dg451.pdf
DG452EY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Charge Injection: 22pC
Base Part Number: DG452
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A SOT-363
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 8V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1427
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SIR426DP-T1-GE3 sir426dp.pdf
SIR426DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Base Part Number: SIR426
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
FET Type: N-Channel
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
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SIC403BCD-T1-GE3 sic403abcd.pdf
SIC403BCD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
Number of Outputs: 2
Frequency - Switching: 200kHz ~ 1MHz
Base Part Number: SIC403
Voltage/Current - Output 1: 0.6V ~ 5.5V, 6A
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI9926CDY-T1-GE3 si9926cd.pdf
SI9926CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI9926
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
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SIS413DN-T1-GE3 sis413dn.pdf
SIS413DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 18A PPAK 1212-8
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIS413
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
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SI5442DU-T1-GE3 si5442du.pdf
SI5442DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 25A PPAK CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5442
Package / Case: PowerPAK® ChipFET™ Single
Supplier Device Package: PowerPAK® ChipFet Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 10V
Vgs (Max): ±8V
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SIR836DP-T1-GE3 sir836dp.pdf
SIR836DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 21A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Power Dissipation (Max): 3.9W (Ta), 15.6W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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SISS27DN-T1-GE3 siss27dn.pdf
SISS27DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK 1212-8S
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Base Part Number: SISS27
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
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SIR470DP-T1-GE3 sir470dp.pdf
SIR470DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5660pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIR470
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
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SUM110P06-07L-E3 sum110p06-07l.pdf
SUM110P06-07L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 110A D2PAK
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUM110
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
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SI3443DDV-T1-GE3 si3443ddv.pdf
SI3443DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 20V TSOP6S
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.3A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 15565 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 94 Stücke - Preis und Lieferfrist anzeigen
SI3456DDV-T1-GE3 si3456ddv.pdf
SI3456DDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.3A 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
auf Bestellung 88869 Stücke
Lieferzeit 21-28 Tag (e)
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SI3440ADV-T1-GE3 si3440adv.pdf
SI3440ADV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A 6TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Package / Case: SOT-23-6 Thin, TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 7441 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9867 Stücke - Preis und Lieferfrist anzeigen
SI3429EDV-T1-GE3 si3429edv.pdf
SI3429EDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A/8A 6TSOP
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI3429
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4085pF @ 50V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
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SI3429EDV-T1-GE3 si3429edv.pdf
SI3429EDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A/8A 6TSOP
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI3429
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4085pF @ 50V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
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SI3429EDV-T1-GE3 si3429edv.pdf
SI3429EDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 20V TSOP6S
Power Dissipation (Max): 4.2W (Tc)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4085pF @ 50V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 8A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5685 Stücke
Lieferzeit 21-28 Tag (e)
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SI3457CDV-T1-GE3 si3457cdv.pdf
SI3457CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.1A 6-TSOP
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 74mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 2W (Ta), 3W (Tc)
auf Bestellung 9567 Stücke
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SI3424CDV-T1-GE3 si3424cdv.pdf
SI3424CDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6-TSOP
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 3453 Stücke
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SI3407DV-T1-GE3 si3407dv.pdf
SI3407DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6-TSOP
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 10V
Power Dissipation (Max): 4.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
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SQD40P10-40L_GE3 sqd40p10-40l.pdf
SQD40P10-40L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 100V TO252
Mounting Type: Surface Mount
Power Dissipation (Max): 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 5540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 8.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2954 Stücke
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DG419BDQ-T1-E3 dg417b.pdf
DG419BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8MSOP
Base Part Number: DG419
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
auf Bestellung 1006 Stücke
Lieferzeit 21-28 Tag (e)
DG419BDY-T1-E3 dg417b.pdf
DG419BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG419
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
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Lieferzeit 21-28 Tag (e)
SIR140DP-T1-RE3 sir140dp.pdf
SIR140DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V POWERPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12209 Stücke - Preis und Lieferfrist anzeigen
3000+ 2.81 EUR
SIR140DP-T1-RE3 sir140dp.pdf
SIR140DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 71.9A/100A PPAK
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Vgs (Max): +20V, -16V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 6209 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9000 Stücke - Preis und Lieferfrist anzeigen
5+ 5.54 EUR
10+ 4.96 EUR
100+ 3.99 EUR
500+ 3.28 EUR
1000+ 2.81 EUR
SIR140DP-T1-RE3 sir140dp.pdf
SIR140DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 25V POWERPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 71.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 8150pF @ 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
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SQ2309ES-T1_GE3 sq2309es.pdf
SQ2309ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 60V SOT23
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 336mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236 (SOT-23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
Vgs (Max): ±20V
auf Bestellung 17799 Stücke
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SI4156DY-T1-GE3 si4156dy.pdf
SI4156DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 15.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3622 Stücke
Lieferzeit 21-28 Tag (e)
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SI2324DS-T1-GE3 si2324ds.pdf
SI2324DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.3A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Rds On (Max) @ Id, Vgs: 234mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1196 Stücke
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SI2343CDS-T1-GE3 si2343cd.pdf
SI2343CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.9A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
Vgs (Max): ±20V
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Lieferzeit 21-28 Tag (e)
SIHU5N80AE-GE3 sihu5n80ae.pdf
SIHU5N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.4A TO251AA
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7716ADN-T1-GE3 SI7716ADN.pdf
SI7716ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 846pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1259 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10320 Stücke - Preis und Lieferfrist anzeigen
SIR466DP-T1-GE3 sir466dp.pdf
SIR466DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
auf Bestellung 3550 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 121112 Stücke - Preis und Lieferfrist anzeigen
SI7322DN-T1-GE3 si7322dn.pdf
SI7322DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18A 1212-8
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7322
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
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Lieferzeit 21-28 Tag (e)
auf Bestellung 26031 Stücke - Preis und Lieferfrist anzeigen
SIR440DP-T1-GE3 sir440dp.pdf
SIR440DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 14830 Stücke
Lieferzeit 21-28 Tag (e)
SI7738DP-T1-GE3 si7738dp.pdf
SI7738DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 75V
Vgs (Max): ±20V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
auf Bestellung 7152 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6412 Stücke - Preis und Lieferfrist anzeigen
SI1021R-T1-GE3 71410.pdf
SI1021R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
auf Bestellung 36928 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24739 Stücke - Preis und Lieferfrist anzeigen
SI5424DC-T1-GE3 si5424dc.pdf
SI5424DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6A 1206-8
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2913 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 392 Stücke - Preis und Lieferfrist anzeigen
DG3516DB-T5-E1 dg3516.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10MICROFOOT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -78dB @ 1MHz
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 12pF
Charge Injection: 1pC
-3db Bandwidth: 300MHz
Switch Time (Ton, Toff) (Max): 45ns, 42ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
On-State Resistance (Max): 2.9Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG3516
Supplier Device Package: 10-Micro Foot® (2x1.5)
Package / Case: 10-WFBGA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 44000 Stücke - Preis und Lieferfrist anzeigen
IRFR9120TRLPBF 91280.pdf
IRFR9120TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2631 Stücke
Lieferzeit 21-28 Tag (e)
IRLR120TRLPBF IRLR(U)120,%20SiHLR(U)120.pdf
IRLR120TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 5V
auf Bestellung 2949 Stücke
Lieferzeit 21-28 Tag (e)
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SI1401EDH-T1-GE3 si1401ed.pdf
SI1401EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 43713 Stücke
Lieferzeit 21-28 Tag (e)
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SI7658ADP-T1-GE3 si7658adp.pdf
SI7658ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Base Part Number: SI7658
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4590pF @ 15V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1485 Stücke
Lieferzeit 21-28 Tag (e)
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SI7818DN-T1-E3 si7818dn.pdf
SI7818DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
auf Bestellung 4449 Stücke
Lieferzeit 21-28 Tag (e)
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SQJB40EP-T1_GE3 sqjb40ep.pdf
SQJB40EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 34W
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 636 Stücke
Lieferzeit 21-28 Tag (e)
SI7454DP-T1-E3 si7454dp.pdf
SI7454DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2468 Stücke
Lieferzeit 21-28 Tag (e)
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SQJB68EP-T1_GE3 sqjb68ep.pdf
SQJB68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 411 Stücke
Lieferzeit 21-28 Tag (e)
SI2328DS-T1-E3 si2328ds.pdf
SI2328DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.15A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
auf Bestellung 6540 Stücke
Lieferzeit 21-28 Tag (e)
IRFR224TRPBF 91271.pdf
IRFR224TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.8A DPAK
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 138 Stücke
Lieferzeit 21-28 Tag (e)
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SIP12109DMP-T1-GE4 sip12109.pdf
SIP12109DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 4A 16MLP
Frequency - Switching: 400kHz ~ 1.5MHz
Current - Output: 4A
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 15V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIP12109
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: Yes
auf Bestellung 1028 Stücke
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SI4465ADY-T1-GE3 si4465ad.pdf
SI4465ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.5W (Tc)
Vgs (Max): ±8V
auf Bestellung 11860 Stücke
Lieferzeit 21-28 Tag (e)
SQJ872EP-T1_GE3 sqj872ep.pdf
SQJ872EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQJ872
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SQJ872EP-T1_GE3 sqj872ep.pdf
SQJ872EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 24.5A PPAK SO-8
Base Part Number: SQJ872
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 25V
Vgs (Max): ±20V
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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SQJ872EP-T1_GE3 sqj872ep.pdf
SQJ872EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 150V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: 8-PowerTDFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1045pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
auf Bestellung 2215 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8535 Stücke - Preis und Lieferfrist anzeigen
SI7820DN-T1-GE3 72581.pdf
SI7820DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A 1212-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
auf Bestellung 13732 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR880DP-T1-GE3 sir880dp.pdf
SIR880DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIR880
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 40V
auf Bestellung 2343 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1820 Stücke - Preis und Lieferfrist anzeigen
SQ4840EY-T1_GE3 sq4840ey.pdf
SQ4840EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 7.1W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Base Part Number: SQ4840
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 381 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798205 Stücke - Preis und Lieferfrist anzeigen
SQJQ100E-T1_GE3 sqjq100e.pdf
SQJQ100E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3945 Stücke - Preis und Lieferfrist anzeigen
SQJQ100E-T1_GE3 sqjq100e.pdf
SQJQ100E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1975 Stücke - Preis und Lieferfrist anzeigen
SQJQ100E-T1_GE3 sqjq100e.pdf
SQJQ100E-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A POWERPAK8
Package / Case: 8-PowerTDFN
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Type: N-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 14780pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1975 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1970 Stücke - Preis und Lieferfrist anzeigen
SQ2361ES-T1_GE3 sq2361es.pdf
SQ2361ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.5A SSOT23
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 19479 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 55557 Stücke - Preis und Lieferfrist anzeigen
SI1424EDH-T1-GE3 si1424ed.pdf
SI1424EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4A SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
auf Bestellung 4219 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3037 Stücke - Preis und Lieferfrist anzeigen
DG2733EDQ-T1-GE3 dg2535e_dg2733e.pdf
DG2733EDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH DUAL SPDT 10MSOP
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 10-MSOP
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7482 Stücke - Preis und Lieferfrist anzeigen
DG507BEN-T1-GE3 dg506b.pdf
DG507BEN-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 16/8CH 28PLCC
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG507
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -84dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Charge Injection: 1pC
-3db Bandwidth: 217MHz
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
auf Bestellung 1400 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 156 Stücke - Preis und Lieferfrist anzeigen
DG507BEW-T1-GE3 dg506b.pdf
DG507BEW-T1-GE3
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 16/8CH 28TSOIC
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG507
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -84dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 17pF
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Switch Time (Ton, Toff) (Max): 250ns, 200ns
-3db Bandwidth: 217MHz
Charge Injection: 1pC
auf Bestellung 587 Stücke
Lieferzeit 21-28 Tag (e)
SIA106DJ-T1-GE3 sia106dj.pdf
SIA106DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 60V POWERPAK SC-70
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
auf Bestellung 5646 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8601 Stücke - Preis und Lieferfrist anzeigen
SI7113ADN-T1-GE3 si7113adn.pdf
SI7113ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 10.8A 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7113
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 8937 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3 Stücke - Preis und Lieferfrist anzeigen
SIS434DN-T1-GE3 sis434dn.pdf
SIS434DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 35A PPAK 1212-8
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Base Part Number: SIS434
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 3283 Stücke
Lieferzeit 21-28 Tag (e)
SIS427EDN-T1-GE3 sis427edn.pdf
SIS427EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A 1212-8
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SIS427
Package / Case: PowerPAK® 1212-8
FET Type: P-Channel
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1930pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10430 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8900 Stücke - Preis und Lieferfrist anzeigen
SI2328DS-T1-GE3 si2328ds.pdf
SI2328DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.15A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 730mW (Ta)
Vgs (Max): ±20V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 23072 Stücke
Lieferzeit 21-28 Tag (e)
SISA35DN-T1-GE3 sisa35dn.pdf
SISA35DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A/16A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6015 Stücke - Preis und Lieferfrist anzeigen
SISA35DN-T1-GE3 sisa35dn.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V PK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 16A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
auf Bestellung 6015 Stücke
Lieferzeit 21-28 Tag (e)
SUD15N15-95-E3 sud15n15.pdf
SUD15N15-95-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A TO252
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
auf Bestellung 4268 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 391 Stücke - Preis und Lieferfrist anzeigen
SI1050X-T1-GE3 si1050x.pdf
SI1050X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 1.34A SC-89-6
Package / Case: SOT-563, SOT-666
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SC-89-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 236mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 86mOhm @ 1.34A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 12427 Stücke
Lieferzeit 21-28 Tag (e)
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SIZ342DT-T1-GE3 siz342dt.pdf
SIZ342DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Base Part Number: SIZ342
Supplier Device Package: 8-Power33 (3x3)
Drain to Source Voltage (Vdss): 30V
Package / Case: 8-PowerWDFN
FET Type: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 4.3W
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
auf Bestellung 10471 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 953 Stücke - Preis und Lieferfrist anzeigen
SUM55P06-19L-E3 sum55p06.pdf
SUM55P06-19L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 55A D2PAK
Base Part Number: SUM55
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 60V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 4365 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 602 Stücke - Preis und Lieferfrist anzeigen
SQJ459EP-T1_GE3 sqj459ep.pdf
SQJ459EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 52A POWERPAKSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SQJ459
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4586pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
auf Bestellung 7601 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 98128 Stücke - Preis und Lieferfrist anzeigen
DG303BDY-T1-E3 71402.pdf
DG303BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH CMOS 14SOIC
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Charge Injection: 8pC
Base Part Number: DG303
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Voltage - Supply, Dual (V±): ±15V
On-State Resistance (Max): 50Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPST - NO/NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 14-SOIC
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -74dB @ 500kHz
auf Bestellung 1465 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 247 Stücke - Preis und Lieferfrist anzeigen
SIS468DN-T1-GE3 sis468dn.pdf
SIS468DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 40V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
auf Bestellung 3113 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14233 Stücke - Preis und Lieferfrist anzeigen
SIS447DN-T1-GE3 sis447dn.pdf
SIS447DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 18A POWERPAK1212
Vgs (Max): ±12V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15168 Stücke - Preis und Lieferfrist anzeigen
SIS447DN-T1-GE3 sis447dn.pdf
SIS447DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 18A POWERPAK1212
Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 7584 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13584 Stücke - Preis und Lieferfrist anzeigen
SIS447DN-T1-GE3 sis447dn.pdf
SIS447DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 18A POWERPAK1212
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
auf Bestellung 7584 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13584 Stücke - Preis und Lieferfrist anzeigen
SIS407ADN-T1-GE3 sis407adn.pdf
SIS407ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 18A 1212-8 PPAK
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 168nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
auf Bestellung 6098 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8880 Stücke - Preis und Lieferfrist anzeigen
SIZ998DT-T1-GE3 siz998dt.pdf
SIZ998DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Power - Max: 20.2W, 32.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair®
Base Part Number: SIZ998
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8500 Stücke - Preis und Lieferfrist anzeigen
SIZ998DT-T1-GE3 siz998dt.pdf
SIZ998DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 20.2W, 32.9W
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 2620pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 19.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 2.8mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIZ980DT-T1-GE3 siz980dt.pdf
SIZ980DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Supplier Device Package: 8-PowerPair®
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 20W, 66W
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual), Schottky
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5599 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1649 Stücke - Preis und Lieferfrist anzeigen
SQJ420EP-T1_GE3 sqj420ep.pdf
SQJ420EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ420
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2485 Stücke - Preis und Lieferfrist anzeigen
SQJ420EP-T1_GE3 sqj420ep.pdf
SQJ420EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A POWERPAKSOL
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 2485 Stücke
Lieferzeit 21-28 Tag (e)
DG4599EDL-T1-GE3 dg4599e.pdf
DG4599EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70-6
Number of Circuits: 1
Part Status: Active
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -77dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: SC-70-6
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5480 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.84 EUR
DG4599EDL-T1-GE3 dg4599e.pdf
DG4599EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70-6
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Channel Capacitance (CS(off), CD(off)): 7pF
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -77dB @ 1MHz
Charge Injection: 1pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: SC-70-6
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5480 Stücke - Preis und Lieferfrist anzeigen
13+ 2.03 EUR
15+ 1.79 EUR
25+ 1.68 EUR
100+ 1.37 EUR
250+ 1.27 EUR
500+ 1.08 EUR
1000+ 0.87 EUR
DG4599EDL-T1-GE3 dg4599e.pdf
DG4599EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Circuits: 1
On-State Resistance (Max): 60Ohm
Channel-to-Channel Matching (ΔRon): 2Ohm
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Switch Time (Ton, Toff) (Max): 30ns, 25ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 7pF
Crosstalk: -77dB @ 1MHz
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
auf Bestellung 2480 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
IRF630SPBF техническая информация sih630s.pdf
IRF630SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF630STRLPBF sih630s.pdf
IRF630STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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