Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10949) > Seite 94 nach 183

Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 89 90 91 92 93 94 95 96 97 98 99 108 126 144 162 180 183  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SI8817DB-T2-E1 SI8817DB-T2-E1 Vishay Siliconix si8817db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
SIR642DP-T1-GE3 SIR642DP-T1-GE3 Vishay Siliconix sir462dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
SI8808DB-T2-E1 SI8808DB-T2-E1 Vishay Siliconix si8808db.pdf Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 7921 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
30+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
SIR826ADP-T1-GE3 SIR826ADP-T1-GE3 Vishay Siliconix sir826adp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3184 Stücke:
Lieferzeit 21-28 Tag (e)
SI8802DB-T2-E1 SI8802DB-T2-E1 Vishay Siliconix si8802db.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
auf Bestellung 35190 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
28+ 0.95 EUR
100+ 0.57 EUR
500+ 0.53 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 21
SI1427EDH-T1-GE3 SI1427EDH-T1-GE3 Vishay Siliconix si1427ed.pdf Description: MOSFET P-CH 20V 2A SC70-6
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Siliconix si1922ed.pdf Description: MOSFET 2N-CH 20V 1.3A SOT-363
auf Bestellung 52974 Stücke:
Lieferzeit 21-28 Tag (e)
SI8812DB-T2-E1 SI8812DB-T2-E1 Vishay Siliconix si8812db.pdf Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Produkt ist nicht verfügbar
SISA18DN-T1-GE3 SISA18DN-T1-GE3 Vishay Siliconix SISA18DN.pdf Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SI7623DN-T1-GE3 SI7623DN-T1-GE3 Vishay Siliconix si7623dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
Produkt ist nicht verfügbar
SI2333DDS-T1-GE3 SI2333DDS-T1-GE3 Vishay Siliconix si2333dds.pdf Description: MOSFET P-CH 12V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.32 EUR
6000+ 0.31 EUR
9000+ 0.29 EUR
30000+ 0.28 EUR
Mindestbestellmenge: 3000
SI7252DP-T1-GE3 SI7252DP-T1-GE3 Vishay Siliconix si7252dp.pdf Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SI8817DB-T2-E1 SI8817DB-T2-E1 Vishay Siliconix si8817db.pdf Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
Produkt ist nicht verfügbar
SIR642DP-T1-GE3 SIR642DP-T1-GE3 Vishay Siliconix sir462dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
SI8808DB-T2-E1 SI8808DB-T2-E1 Vishay Siliconix si8808db.pdf Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.35 EUR
6000+ 0.33 EUR
Mindestbestellmenge: 3000
SIR826ADP-T1-GE3 SIR826ADP-T1-GE3 Vishay Siliconix sir826adp.pdf Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SI8802DB-T2-E1 SI8802DB-T2-E1 Vishay Siliconix si8802db.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.33 EUR
6000+ 0.32 EUR
9000+ 0.29 EUR
30000+ 0.28 EUR
Mindestbestellmenge: 3000
SI1427EDH-T1-GE3 SI1427EDH-T1-GE3 Vishay Siliconix si1427ed.pdf Description: MOSFET P-CH 20V 2A SC70-6
Produkt ist nicht verfügbar
SI1922EDH-T1-GE3 SI1922EDH-T1-GE3 Vishay Siliconix si1922ed.pdf Description: MOSFET 2N-CH 20V 1.3A SOT-363
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix si4286dy.pdf Description: MOSFET 2N-CH 40V 7A 8SO
Produkt ist nicht verfügbar
SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix si4286dy.pdf Description: MOSFET 2N-CH 40V 7A 8SO
auf Bestellung 2508 Stücke:
Lieferzeit 21-28 Tag (e)
SI4286DY-T1-GE3 SI4286DY-T1-GE3 Vishay Siliconix si4286dy.pdf Description: MOSFET 2N-CH 40V 7A 8SO
auf Bestellung 2558 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ300DT-T1-GE3 SIZ300DT-T1-GE3 Vishay Siliconix siz300dt.pdf Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
Produkt ist nicht verfügbar
SIZ728DT-T1-GE3 SIZ728DT-T1-GE3 Vishay Siliconix siz728dt.pdf Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ730DT-T1-GE3 SIZ730DT-T1-GE3 Vishay Siliconix siz730dt.pdf Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ790DT-T1-GE3 SIZ790DT-T1-GE3 Vishay Siliconix siz790dt.pdf Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 Vishay Siliconix siz900dt.pdf Description: MOSFET 2N-CH 30V 24A POWERPAIR
Produkt ist nicht verfügbar
SIZ916DT-T1-GE3 SIZ916DT-T1-GE3 Vishay Siliconix siz916dt.pdf Description: MOSFET 2N-CH 30V 16A POWERPAIR
Produkt ist nicht verfügbar
SIZ904DT-T1-GE3 SIZ904DT-T1-GE3 Vishay Siliconix siz904dt.pdf Description: MOSFET 2N-CH 30V 12A POWERPAIR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ300DT-T1-GE3 SIZ300DT-T1-GE3 Vishay Siliconix siz300dt.pdf Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.91 EUR
10+ 2.61 EUR
Mindestbestellmenge: 9
SIZ730DT-T1-GE3 SIZ730DT-T1-GE3 Vishay Siliconix siz730dt.pdf Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
auf Bestellung 314 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.11 EUR
15+ 1.74 EUR
100+ 1.53 EUR
Mindestbestellmenge: 13
SIZ790DT-T1-GE3 SIZ790DT-T1-GE3 Vishay Siliconix siz790dt.pdf Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 Vishay Siliconix siz900dt.pdf Description: MOSFET 2N-CH 30V 24A POWERPAIR
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ916DT-T1-GE3 SIZ916DT-T1-GE3 Vishay Siliconix siz916dt.pdf Description: MOSFET 2N-CH 30V 16A POWERPAIR
Produkt ist nicht verfügbar
SIZ904DT-T1-GE3 SIZ904DT-T1-GE3 Vishay Siliconix siz904dt.pdf Description: MOSFET 2N-CH 30V 12A POWERPAIR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ900DT-T1-GE3 SIZ900DT-T1-GE3 Vishay Siliconix siz900dt.pdf Description: MOSFET 2N-CH 30V 24A POWERPAIR
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 Vishay Siliconix siz704dt.pdf Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 3077 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.57 EUR
13+ 2.11 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
DG429DN DG429DN Vishay Siliconix 70063.pdf Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Produkt ist nicht verfügbar
SI2336DS-T1-GE3 SI2336DS-T1-GE3 Vishay Siliconix si2336ds.pdf Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Siliconix powerpak.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 SIR640DP-T1-GE3 Vishay Siliconix powerpak.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 SIR870DP-T1-GE3 Vishay Siliconix sir870dp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
Produkt ist nicht verfügbar
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix si5999ed.pdf Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Vishay Siliconix sia429dj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 3000
SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 Vishay Siliconix si2318cds.pdf Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 102071 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 Vishay Siliconix si2318cds.pdf Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 102071 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.25 EUR
30000+ 0.24 EUR
75000+ 0.23 EUR
Mindestbestellmenge: 3000
SI2336DS-T1-GE3 SI2336DS-T1-GE3 Vishay Siliconix si2336ds.pdf Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 SIR870DP-T1-GE3 Vishay Siliconix sir870dp.pdf Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.95 EUR
10+ 5.35 EUR
100+ 4.3 EUR
500+ 3.53 EUR
Mindestbestellmenge: 5
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix si5999ed.pdf Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SI5999EDU-T1-GE3 SI5999EDU-T1-GE3 Vishay Siliconix si5999ed.pdf Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 SIA429DJT-T1-GE3 Vishay Siliconix sia429dj.pdf Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIHW30N60E-GE3 SIHW30N60E-GE3 Vishay Siliconix SiHW30N60E.pdf Description: MOSFET N-CH 600V 29A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.79 EUR
10+ 12.41 EUR
100+ 10.04 EUR
Mindestbestellmenge: 2
SIHG33N60E-GE3 SIHG33N60E-GE3 Vishay Siliconix sihg33n60e.pdf Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Produkt ist nicht verfügbar
SIHW33N60E-GE3 SIHW33N60E-GE3 Vishay Siliconix sihw33n60e.pdf Description: MOSFET N-CH 600V 33A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 480 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.42 EUR
10+ 12.95 EUR
480+ 9.31 EUR
Mindestbestellmenge: 2
SIHW47N60E-GE3 SIHW47N60E-GE3 Vishay Siliconix SiHW47N60E.pdf Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.49 EUR
Mindestbestellmenge: 2
DG9409DN-T1-E4 DG9409DN-T1-E4 Vishay Siliconix 71870.pdf Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 7406 Stücke:
Lieferzeit 21-28 Tag (e)
DG9431DY-T1-E3 DG9431DY-T1-E3 Vishay Siliconix dg9431.pdf Description: IC ANALOG SWITCH SPDT LV 8SOIC
auf Bestellung 3341 Stücke:
Lieferzeit 21-28 Tag (e)
DG9461DV-T1-E3 DG9461DV-T1-E3 Vishay Siliconix dg9461.pdf Description: IC SWITCH LV SPDT 6TSOP
auf Bestellung 2593 Stücke:
Lieferzeit 21-28 Tag (e)
SI4404DY-T1-E3 SI4404DY-T1-E3 Vishay Siliconix si4404dy.pdf Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 Si4412ADY-T1-E3 Vishay Siliconix 71105.pdf Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
SI8817DB-T2-E1 si8817db.pdf
SI8817DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
SIR642DP-T1-GE3 sir462dp.pdf
SIR642DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
SI8808DB-T2-E1 si8808db.pdf
SI8808DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 7921 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
30+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
SIR826ADP-T1-GE3 sir826adp.pdf
SIR826ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3184 Stücke:
Lieferzeit 21-28 Tag (e)
SI8802DB-T2-E1 si8802db.pdf
SI8802DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
auf Bestellung 35190 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
28+ 0.95 EUR
100+ 0.57 EUR
500+ 0.53 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 21
SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A SC70-6
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
SI1922EDH-T1-GE3 si1922ed.pdf
SI1922EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SOT-363
auf Bestellung 52974 Stücke:
Lieferzeit 21-28 Tag (e)
SI8812DB-T2-E1 si8812db.pdf
SI8812DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
Produkt ist nicht verfügbar
SISA18DN-T1-GE3 SISA18DN.pdf
SISA18DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38.3A 1212-8
Produkt ist nicht verfügbar
SI7623DN-T1-GE3 si7623dn.pdf
SI7623DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
Produkt ist nicht verfügbar
SI2333DDS-T1-GE3 si2333dds.pdf
SI2333DDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
6000+ 0.31 EUR
9000+ 0.29 EUR
30000+ 0.28 EUR
Mindestbestellmenge: 3000
SI7252DP-T1-GE3 si7252dp.pdf
SI7252DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 36.7A
Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SI8817DB-T2-E1 si8817db.pdf
SI8817DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 76mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 10 V
Produkt ist nicht verfügbar
SIR642DP-T1-GE3 sir462dp.pdf
SIR642DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4155 pF @ 20 V
Produkt ist nicht verfügbar
SI8808DB-T2-E1 si8808db.pdf
SI8808DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
6000+ 0.33 EUR
Mindestbestellmenge: 3000
SIR826ADP-T1-GE3 sir826adp.pdf
SIR826ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SI8802DB-T2-E1 si8802db.pdf
SI8802DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 1A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
6000+ 0.32 EUR
9000+ 0.29 EUR
30000+ 0.28 EUR
Mindestbestellmenge: 3000
SI1427EDH-T1-GE3 si1427ed.pdf
SI1427EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2A SC70-6
Produkt ist nicht verfügbar
SI1922EDH-T1-GE3 si1922ed.pdf
SI1922EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 1.3A SOT-363
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)
SI4286DY-T1-GE3 si4286dy.pdf
SI4286DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SO
Produkt ist nicht verfügbar
SI4286DY-T1-GE3 si4286dy.pdf
SI4286DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SO
auf Bestellung 2508 Stücke:
Lieferzeit 21-28 Tag (e)
SI4286DY-T1-GE3 si4286dy.pdf
SI4286DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7A 8SO
auf Bestellung 2558 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ300DT-T1-GE3 siz300dt.pdf
SIZ300DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
Produkt ist nicht verfügbar
SIZ728DT-T1-GE3 siz728dt.pdf
SIZ728DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ730DT-T1-GE3 siz730dt.pdf
SIZ730DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ790DT-T1-GE3 siz790dt.pdf
SIZ790DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ900DT-T1-GE3 siz900dt.pdf
SIZ900DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A POWERPAIR
Produkt ist nicht verfügbar
SIZ916DT-T1-GE3 siz916dt.pdf
SIZ916DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Produkt ist nicht verfügbar
SIZ904DT-T1-GE3 siz904dt.pdf
SIZ904DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A POWERPAIR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ300DT-T1-GE3 siz300dt.pdf
SIZ300DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 11A POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16.7W, 31W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-PowerPair®
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.91 EUR
10+ 2.61 EUR
Mindestbestellmenge: 9
SIZ730DT-T1-GE3 siz730dt.pdf
SIZ730DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
auf Bestellung 314 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.11 EUR
15+ 1.74 EUR
100+ 1.53 EUR
Mindestbestellmenge: 13
SIZ790DT-T1-GE3 siz790dt.pdf
SIZ790DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 6-POWERPAIR
Produkt ist nicht verfügbar
SIZ900DT-T1-GE3 siz900dt.pdf
SIZ900DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A POWERPAIR
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ916DT-T1-GE3 siz916dt.pdf
SIZ916DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A POWERPAIR
Produkt ist nicht verfügbar
SIZ904DT-T1-GE3 siz904dt.pdf
SIZ904DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A POWERPAIR
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ900DT-T1-GE3 siz900dt.pdf
SIZ900DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 24A POWERPAIR
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
SIZ704DT-T1-GE3 siz704dt.pdf
SIZ704DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 3077 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
13+ 2.11 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
DG429DN 70063.pdf
DG429DN
Hersteller: Vishay Siliconix
Description: IC MUX ANLG 8CH W/LATCH 20PLCC
Produkt ist nicht verfügbar
SI2336DS-T1-GE3 si2336ds.pdf
SI2336DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 powerpak.pdf
SIR640DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR640DP-T1-GE3 powerpak.pdf
SIR640DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 20 V
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 sir870dp.pdf
SIR870DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
Produkt ist nicht verfügbar
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 sia429dj.pdf
SIA429DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
6000+ 0.46 EUR
9000+ 0.43 EUR
Mindestbestellmenge: 3000
SI2318CDS-T1-GE3 si2318cds.pdf
SI2318CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 102071 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2318CDS-T1-GE3 si2318cds.pdf
SI2318CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 20 V
auf Bestellung 102071 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
6000+ 0.27 EUR
9000+ 0.25 EUR
30000+ 0.24 EUR
75000+ 0.23 EUR
Mindestbestellmenge: 3000
SI2336DS-T1-GE3 si2336ds.pdf
SI2336DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.2A SOT23-3
Produkt ist nicht verfügbar
SIR870DP-T1-GE3 sir870dp.pdf
SIR870DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 50 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.95 EUR
10+ 5.35 EUR
100+ 4.3 EUR
500+ 3.53 EUR
Mindestbestellmenge: 5
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SI5999EDU-T1-GE3 si5999ed.pdf
SI5999EDU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6A POWERPAK
auf Bestellung 5474 Stücke:
Lieferzeit 21-28 Tag (e)
SIA429DJT-T1-GE3 sia429dj.pdf
SIA429DJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 6A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
auf Bestellung 27360 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.22 EUR
100+ 0.85 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
SIHW30N60E-GE3 SiHW30N60E.pdf
SIHW30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.79 EUR
10+ 12.41 EUR
100+ 10.04 EUR
Mindestbestellmenge: 2
SIHG33N60E-GE3 sihg33n60e.pdf
SIHG33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Produkt ist nicht verfügbar
SIHW33N60E-GE3 sihw33n60e.pdf
SIHW33N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
auf Bestellung 480 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.42 EUR
10+ 12.95 EUR
480+ 9.31 EUR
Mindestbestellmenge: 2
SIHW47N60E-GE3 SiHW47N60E.pdf
SIHW47N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+22.49 EUR
Mindestbestellmenge: 2
DG9409DN-T1-E4 71870.pdf
DG9409DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 8/4CH 16QFN
auf Bestellung 7406 Stücke:
Lieferzeit 21-28 Tag (e)
DG9431DY-T1-E3 dg9431.pdf
DG9431DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV 8SOIC
auf Bestellung 3341 Stücke:
Lieferzeit 21-28 Tag (e)
DG9461DV-T1-E3 dg9461.pdf
DG9461DV-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH LV SPDT 6TSOP
auf Bestellung 2593 Stücke:
Lieferzeit 21-28 Tag (e)
SI4404DY-T1-E3 si4404dy.pdf
SI4404DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 71105.pdf
Si4412ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 89 90 91 92 93 94 95 96 97 98 99 108 126 144 162 180 183  [ Nächste Seite >> ]