Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SUM90N06-4M4P-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 90A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
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SIHH14N65E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 15A PWRPAK 8X8 FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerTDFN Base Part Number: SIHH14 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 156W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) |
auf Bestellung 5961 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2926 Stücke - Preis und Lieferfrist anzeigen
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SIHH24N65E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHAN 650V 23A POWERPAK Base Part Number: SIHH24 Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 202W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2814pF @ 100V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active |
auf Bestellung 3977 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 971 Stücke - Preis und Lieferfrist anzeigen
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SIHH14N65EF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHAN 650V 15A POWERPAK Base Part Number: SIHH14 Package / Case: 8-PowerTDFN Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Mounting Type: Surface Mount Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) Part Status: Active Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Power Dissipation (Max): 156W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1749pF @ 100V Vgs (Max): ±30V |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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DG419LEDQ-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 8MSOP Switch Time (Ton, Toff) (Max): 40ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V On-State Resistance (Max): 18Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPDT Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Crosstalk: -72dB @ 1MHz Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 6pF, 20pF Charge Injection: 26pC |
auf Bestellung 4792 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1895 Stücke - Preis und Lieferfrist anzeigen
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SIR158DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V Vgs (Max): ±20V |
auf Bestellung 2606 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
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SI2337DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 2.2A SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active |
auf Bestellung 26844 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
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| SQJQ144AE-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 575A PPAK 8 X 8 Input Capacitance (Ciss) (Max) @ Vds: 9020pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 575A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Base Part Number: SQJQ144 Package / Case: PowerPAK® 8 x 8 Supplier Device Package: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 600W (Tc) Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
auf Bestellung 2000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3784 Stücke - Preis und Lieferfrist anzeigen
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IRFP064 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 70A TO247-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 78A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 95 Stücke - Preis und Lieferfrist anzeigen
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SI7848BDP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 47A PPAK SO-8 Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI7848 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
auf Bestellung 9692 Stücke Lieferzeit 21-28 Tag (e) |
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SUD50P04-09L-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO252 Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3W (Ta), 136W (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V |
auf Bestellung 2300 Stücke Lieferzeit 21-28 Tag (e) |
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SISH472DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V POWERPAK 1212 Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V POWERPAK 1212 Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8SH Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8SH Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V |
auf Bestellung 879 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V POWERPAK 1212 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH |
auf Bestellung 5510 Stücke Lieferzeit 21-28 Tag (e) |
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SI2318DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Technology: MOSFET (Metal Oxide) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 40V FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 69000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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SIA975DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 12V 4.5A SC-70-6 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIA975 Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 7.8W Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A Drain to Source Voltage (Vdss): 12V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) |
auf Bestellung 14243 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
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SI5515CDC-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 20V 4A 1206-8 Power - Max: 3.1W Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: N and P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI5515 Supplier Device Package: 1206-8 ChipFET™ Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 2495 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 72317 Stücke - Preis und Lieferfrist anzeigen
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SI2318DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT-23 Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V Vgs (Max): ±20V |
auf Bestellung 4844 Stücke Lieferzeit 21-28 Tag (e) |
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IRL3103D1STRR | Vishay Siliconix |
Description: MOSFET N-CH 30V 64A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI9407BDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 1916 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7124 Stücke - Preis und Lieferfrist anzeigen
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SI7810DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 3.4A 1212-8 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI7810 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 21140 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 65238 Stücke - Preis und Lieferfrist anzeigen
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SIHD240N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 12A DPAK Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI2300DS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 3.6A SOT-23 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 42717 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
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SI1967DH-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 1.3A SC70-6 Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.25W Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.3A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI1967 Supplier Device Package: SC-70-6 (SOT-363) |
auf Bestellung 28540 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 35800 Stücke - Preis und Lieferfrist anzeigen
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SUD50N06-09L-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO252 Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO252 Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SUD50 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3W (Ta), 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V Vgs (Max): ±20V Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 4296 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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SQD50N06-09L_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO252 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET N-CH 60V 50A Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SQD50N Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 136W (Tc) |
auf Bestellung 1960 Stücke Lieferzeit 21-28 Tag (e) |
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SQP50N06-09L_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Part Status: Active Operating Temperature: -55°C ~ 175°C (TJ) Packaging: Tape & Reel (TR) Power Dissipation (Max): 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET N-CH 60V 50A TO220AB Part Status: Active Packaging: Cut Tape (CT) Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 424 Stücke Lieferzeit 21-28 Tag (e) |
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SUD50N06-08H-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 93A TO252 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power Dissipation (Max): 3W (Ta), 136W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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SIS412DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 1212-8 PPAK Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIS412 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 10393 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 13360 Stücke - Preis und Lieferfrist anzeigen
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SIHF9630S-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 6.5A D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIHF9630 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3W (Ta), 74W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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SIHF9640S-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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SIHG40N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 40A TO247AC Mounting Type: Through Hole Package / Case: TO-247-3 Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Packaging: Tube Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 329W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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SIHJ240N60E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 12A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET N-CHAN 600V PPAK SO-8L Input Capacitance (Ciss) (Max) @ Vds: 783pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Base Part Number: SIHJ240 Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 600V Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 89W (Tc) |
auf Bestellung 2947 Stücke Lieferzeit 21-28 Tag (e) |
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SIHA240N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 12A TO220 Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Packaging: Tube Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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SIHP240N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 12A TO220AB Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 78W (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
auf Bestellung 461 Stücke Lieferzeit 21-28 Tag (e) |
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IRFPS40N60KPBF | Vishay Siliconix |
Description: MOSFET N-CH 600V 40A SUPER247 Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SUPER-247™ (TO-274AA) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 570W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V Package / Case: TO-274AA Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||
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SI3493BDV-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 8A 6-TSOP Technology: MOSFET (Metal Oxide) Base Part Number: SI3493 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 20V |
auf Bestellung 21123 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9122 Stücke - Preis und Lieferfrist anzeigen
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SI7922DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A 1212-8 Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A Drain to Source Voltage (Vdss): 100V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI7922 Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA |
auf Bestellung 6860 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 37926 Stücke - Preis und Lieferfrist anzeigen
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SI2316DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 2.9A SOT23-3 Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 700mW (Ta) Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 34559 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 38536 Stücke - Preis und Lieferfrist anzeigen
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SI6926ADQ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 4.1A 8-TSSOP Current - Continuous Drain (Id) @ 25°C: 4.1A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI6926 Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 830mW Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V |
auf Bestellung 11808 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 117735 Stücke - Preis und Lieferfrist anzeigen
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IRF640SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A D2PAK Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6068 Stücke - Preis und Lieferfrist anzeigen
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IRF640PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO220AB Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 125 Stücke - Preis und Lieferfrist anzeigen
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IRF640STRRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO263 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO263 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) FET Type: N-Channel |
auf Bestellung 661 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 200V 18A D2PAK Supplier Device Package: TO-263 (D²Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 97 Stücke Lieferzeit 21-28 Tag (e) |
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IRF640STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO263 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Supplier Device Package: D²PAK (TO-263) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRF640S |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
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IRF640L |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A I2PAK Technology: MOSFET (Metal Oxide) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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IRF640STRL |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRF640STRR |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A D2PAK FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25000 Stücke - Preis und Lieferfrist anzeigen
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IRF640LPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO262-3 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-262-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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SI7615ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V |
auf Bestellung 2663 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CH 20V 35A 1212-8S Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 7480 Stücke Lieferzeit 21-28 Tag (e) |
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SI7232DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 25A PPAK 1212-8 Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 25A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: PowerPAK® 1212-8 Dual Base Part Number: SI7232 Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 23W Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V |
auf Bestellung 1641 Stücke Lieferzeit 21-28 Tag (e) |
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SI7617DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 35A 1212-8 PPAK Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V Vgs (Max): ±25V Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 12284 Stücke Lieferzeit 21-28 Tag (e) |
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SI1403BDL-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 1.4A SC70-6 Base Part Number: SI1403 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363) Power Dissipation (Max): 568mW (Ta) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 4987 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 376 Stücke - Preis und Lieferfrist anzeigen
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SI1403BDL-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 1.5A SC70-6 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 625mW (Ta) Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Base Part Number: SI1403 Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Mounting Type: Surface Mount FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 13252 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 73 Stücke - Preis und Lieferfrist anzeigen
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SQJ403BEEP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 30A POWERPAKSO-8 Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SQJ403 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 68W (Tc) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA |
auf Bestellung 2693 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1742 Stücke - Preis und Lieferfrist anzeigen
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DG403BDY-T1-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SPDT 16SOIC Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 45Ohm Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 150ns, 100ns Charge Injection: 60pC Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -94.8dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC Base Part Number: DG403 |
auf Bestellung 2250 Stücke Lieferzeit 21-28 Tag (e) |
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SISS23DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 50A PPAK 1212-8S Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 15V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs(th) (Max) @ Id: 900mV @ 250µA Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 4.8W (Ta), 57W (Tc) |
auf Bestellung 2560 Stücke Lieferzeit 21-28 Tag (e) |
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SI7164DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Part Status: Active Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 30V Vgs (Max): ±20V Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 825 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 21726 Stücke - Preis und Lieferfrist anzeigen
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DG455EQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Crosstalk: -85dB @ 1MHz Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Base Part Number: DG455 Charge Injection: 22pC Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Switch Time (Ton, Toff) (Max): 118ns, 97ns Voltage - Supply, Dual (V±): ±5V ~ 15V Voltage - Supply, Single (V+): 12V Channel-to-Channel Matching (ΔRon): 120mOhm On-State Resistance (Max): 5.3Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 3275 Stücke Lieferzeit 21-28 Tag (e) |
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DG455EY-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Base Part Number: DG455 Supplier Device Package: 16-SOIC Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Operating Temperature: -40°C ~ 125°C (TA) Crosstalk: -85dB @ 1MHz Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 31pf, 34pF Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Charge Injection: 22pC Switch Time (Ton, Toff) (Max): 118ns, 97ns Voltage - Supply, Dual (V±): ±5V ~ 15V Voltage - Supply, Single (V+): 12V Channel-to-Channel Matching (ΔRon): 120mOhm On-State Resistance (Max): 5.3Ohm |
auf Bestellung 330 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 844 Stücke - Preis und Lieferfrist anzeigen
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SIR170DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 23.2A/95A PPAK Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIR170 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 23.2A/95A PPAK Manufacturer: Vishay Siliconix Base Part Number: SIR170 Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 2637 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100 V PWRPAK SO-8 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V Part Status: Active Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
auf Bestellung 5943 Stücke Lieferzeit 21-28 Tag (e) |
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SI4848DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 2.7A 8-SOIC Base Part Number: SI4848 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.5W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drain to Source Voltage (Vdss): 150V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 6336 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 65000 Stücke - Preis und Lieferfrist anzeigen
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SIR422DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 40A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 8002 Stücke Lieferzeit 21-28 Tag (e) |
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SIR800DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 50A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 10V Vgs (Max): ±12V Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.2W (Ta), 69W (Tc) |
auf Bestellung 6790 Stücke Lieferzeit 21-28 Tag (e) |
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SIR166DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 48W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 143 Stücke - Preis und Lieferfrist anzeigen
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SIZ340DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 30A PWRPAIR3X3 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 8-Power33 (3x3) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 16.7W, 31W Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V Current - Continuous Drain (Id) @ 25°C: 30A, 40A Drain to Source Voltage (Vdss): 30V FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Active Base Part Number: SIZ340 |
auf Bestellung 6327 Stücke Lieferzeit 21-28 Tag (e) |
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SQD50P04-09L_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 50A Drain to Source Voltage (Vdss): 40V Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252, (D-Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 136W (Tc) Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) |
auf Bestellung 2036 Stücke Lieferzeit 21-28 Tag (e) |
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IRFR9024PBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRFR9024TRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V |
auf Bestellung 139 Stücke Lieferzeit 21-28 Tag (e) |
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IRFR9024TRRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRFR9024 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRFR9024TR |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRFR9024TRL |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRFR9024TRR |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Part Status: Obsolete Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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SI7850ADP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 10.3A/12A PPAK Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
| Vishay Siliconix |
Description: MOSFET N-CH 60V 10.3A/12A PPAK Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 408 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 60V POWERPAK SO-8 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 2641 Stücke Lieferzeit 21-28 Tag (e) |
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SIRB40DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK SO8 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 46.2W Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 40V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||
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IRF634STRRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 8.1A D2PAK Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Drain to Source Voltage (Vdss): 250V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 480 Stücke Lieferzeit 21-28 Tag (e) |
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SIR664DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 30V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 |
auf Bestellung 6025 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2968 Stücke - Preis und Lieferfrist anzeigen
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| SUM90N06-4M4P-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 90A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
| SIHH14N65E-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PWRPAK 8X8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH14
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
auf Bestellung 5961 Stücke Description: MOSFET N-CH 650V 15A PWRPAK 8X8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH14
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2926 Stücke - Preis und Lieferfrist anzeigen
| SIHH24N65E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 650V 23A POWERPAK
Base Part Number: SIHH24
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2814pF @ 100V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 3977 Stücke Description: MOSFET N-CHAN 650V 23A POWERPAK
Base Part Number: SIHH24
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2814pF @ 100V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 971 Stücke - Preis und Lieferfrist anzeigen
| SIHH14N65EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 650V 15A POWERPAK
Base Part Number: SIHH14
Package / Case: 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1749pF @ 100V
Vgs (Max): ±30V
auf Bestellung 50 Stücke Description: MOSFET N-CHAN 650V 15A POWERPAK
Base Part Number: SIHH14
Package / Case: 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1749pF @ 100V
Vgs (Max): ±30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| DG419LEDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 18Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Charge Injection: 26pC
auf Bestellung 4792 Stücke Description: IC ANALOG SWITCH 8MSOP
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 18Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Charge Injection: 26pC
Lieferzeit 21-28 Tag (e)
auf Bestellung 1895 Stücke - Preis und Lieferfrist anzeigen
| SIR158DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V
Vgs (Max): ±20V
auf Bestellung 2606 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4980pF @ 15V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| SI2337DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
auf Bestellung 26844 Stücke Description: MOSFET P-CH 80V 2.2A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
| SQJQ144AE-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 575A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 9020pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SQJQ144
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 600W (Tc)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2000 Stücke Description: MOSFET N-CH 40V 575A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 9020pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 575A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SQJQ144
Package / Case: PowerPAK® 8 x 8
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 600W (Tc)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 3784 Stücke - Preis und Lieferfrist anzeigen
| IRFP064 | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 70A TO247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 70A TO247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 78A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
auf Bestellung 95 Stücke - Preis und Lieferfrist anzeigen
| SI7848BDP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 47A PPAK SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7848
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
auf Bestellung 9692 Stücke Description: MOSFET N-CH 40V 47A PPAK SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7848
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Lieferzeit 21-28 Tag (e)
| SUD50P04-09L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
auf Bestellung 2300 Stücke Description: MOSFET P-CH 40V 50A TO252
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
Lieferzeit 21-28 Tag (e)
| SISH472DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V POWERPAK 1212
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V POWERPAK 1212
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Tape & Reel (TR)
auf Bestellung 6389 Stücke - Preis und Lieferfrist anzeigen
| SISH472DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V POWERPAK 1212
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
auf Bestellung 879 Stücke Description: MOSFET N-CH 30V POWERPAK 1212
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8SH
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5510 Stücke - Preis und Lieferfrist anzeigen
|
| SISH472DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V POWERPAK 1212
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
auf Bestellung 5510 Stücke Description: MOSFET N-CH 30V POWERPAK 1212
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Lieferzeit 21-28 Tag (e)
auf Bestellung 879 Stücke - Preis und Lieferfrist anzeigen
| SI2318DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 69000 Stücke Description: MOSFET N-CH 40V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 40V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| SIA975DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA975
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
auf Bestellung 14243 Stücke Description: MOSFET 2P-CH 12V 4.5A SC-70-6
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA975
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 4.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
| SI5515CDC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5515
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2495 Stücke Description: MOSFET N/P-CH 20V 4A 1206-8
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5515
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 72317 Stücke - Preis und Lieferfrist anzeigen
| SI2318DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 4844 Stücke - Preis und Lieferfrist anzeigen
| SI2318DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 3A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V
Vgs (Max): ±20V
auf Bestellung 4844 Stücke Description: MOSFET N-CH 40V 3A SOT-23
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 20V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
| IRL3103D1STRR |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 64A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 64A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Discontinued at Digi-Key
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| SI9407BDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1916 Stücke Description: MOSFET P-CH 60V 4.7A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7124 Stücke - Preis und Lieferfrist anzeigen
| SI7810DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A 1212-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7810
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 21140 Stücke Description: MOSFET N-CH 100V 3.4A 1212-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7810
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 65238 Stücke - Preis und Lieferfrist anzeigen
| SIHD240N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 12A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI2300DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.6A SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 42717 Stücke Description: MOSFET N-CH 30V 3.6A SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
| SI1967DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 1.3A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1967
Supplier Device Package: SC-70-6 (SOT-363)
auf Bestellung 28540 Stücke Description: MOSFET 2P-CH 20V 1.3A SC70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 490mOhm @ 910mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1967
Supplier Device Package: SC-70-6 (SOT-363)
Lieferzeit 21-28 Tag (e)
auf Bestellung 35800 Stücke - Preis und Lieferfrist anzeigen
| SUD50N06-09L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 50A TO252
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
auf Bestellung 4396 Stücke - Preis und Lieferfrist anzeigen
| SUD50N06-09L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4296 Stücke Description: MOSFET N-CH 60V 50A TO252
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| SQD50N06-09L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 50A TO252
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 1960 Stücke - Preis und Lieferfrist anzeigen
| SQD50N06-09L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQD50N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
auf Bestellung 1960 Stücke Description: MOSFET N-CH 60V 50A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQD50N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Lieferzeit 21-28 Tag (e)
| SQP50N06-09L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 50A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 424 Stücke - Preis und Lieferfrist anzeigen
| SQP50N06-09L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO220AB
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 424 Stücke Description: MOSFET N-CH 60V 50A TO220AB
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
| SUD50N06-08H-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 93A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 93A TO252
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| SIS412DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 1212-8 PPAK
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIS412
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 10393 Stücke Description: MOSFET N-CH 30V 12A 1212-8 PPAK
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIS412
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 15.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 13360 Stücke - Preis und Lieferfrist anzeigen
| SIHF9630S-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHF9630
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 6.5A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHF9630
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
| SIHF9640S-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| SIHG40N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 40A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 4436 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Packaging: Tube
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| SIHJ240N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 12A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
auf Bestellung 2947 Stücke - Preis und Lieferfrist anzeigen
| SIHJ240N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 600V PPAK SO-8L
Input Capacitance (Ciss) (Max) @ Vds: 783pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SIHJ240
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
auf Bestellung 2947 Stücke Description: MOSFET N-CHAN 600V PPAK SO-8L
Input Capacitance (Ciss) (Max) @ Vds: 783pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SIHJ240
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 89W (Tc)
Lieferzeit 21-28 Tag (e)
| SIHA240N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 12A TO220
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| SIHP240N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 461 Stücke Description: MOSFET N-CH 600V 12A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
|
| IRFPS40N60KPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A SUPER247
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
Package / Case: TO-274AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 40A SUPER247
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SUPER-247™ (TO-274AA)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 570W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 7970 pF @ 25 V
Package / Case: TO-274AA
Packaging: Tube
| SI3493BDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A 6-TSOP
Technology: MOSFET (Metal Oxide)
Base Part Number: SI3493
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
auf Bestellung 21123 Stücke Description: MOSFET P-CH 20V 8A 6-TSOP
Technology: MOSFET (Metal Oxide)
Base Part Number: SI3493
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.08W (Ta), 2.97W (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1805pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 43.5nC @ 5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 9122 Stücke - Preis und Lieferfrist anzeigen
| SI7922DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
auf Bestellung 6860 Stücke Description: MOSFET 2N-CH 100V 1.8A 1212-8
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7922
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 37926 Stücke - Preis und Lieferfrist anzeigen
| SI2316DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.9A SOT23-3
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 34559 Stücke Description: MOSFET N-CH 30V 2.9A SOT23-3
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 800mV @ 250µA (Min)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 38536 Stücke - Preis und Lieferfrist anzeigen
| SI6926ADQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8-TSSOP
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI6926
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
auf Bestellung 11808 Stücke Description: MOSFET 2N-CH 20V 4.1A 8-TSSOP
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI6926
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 117735 Stücke - Preis und Lieferfrist anzeigen
| IRF640SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
auf Bestellung 6068 Stücke - Preis und Lieferfrist anzeigen
| IRF640PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A TO220AB
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 125 Stücke - Preis und Lieferfrist anzeigen
| IRF640STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 758 Stücke - Preis und Lieferfrist anzeigen
| IRF640STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
FET Type: N-Channel
auf Bestellung 661 Stücke Description: MOSFET N-CH 200V 18A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 97 Stücke - Preis und Lieferfrist anzeigen
|
| IRF640STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A D2PAK
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 97 Stücke Description: MOSFET N-CH 200V 18A D2PAK
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
auf Bestellung 661 Stücke - Preis und Lieferfrist anzeigen
| IRF640STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: D²PAK (TO-263)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Supplier Device Package: D²PAK (TO-263)
| IRF640S | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| IRF640L |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A I2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A I2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| IRF640STRL |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| IRF640STRR |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A D2PAK
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A D2PAK
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 25000 Stücke - Preis und Lieferfrist anzeigen
| IRF640LPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO262-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 18A TO262-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-262-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
| SI7615ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
auf Bestellung 10143 Stücke - Preis und Lieferfrist anzeigen
| SI7615ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
auf Bestellung 2663 Stücke Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 7480 Stücke - Preis und Lieferfrist anzeigen
| SI7615ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A 1212-8S
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 7480 Stücke Description: MOSFET P-CH 20V 35A 1212-8S
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 183nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2663 Stücke - Preis und Lieferfrist anzeigen
| SI7232DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 25A PPAK 1212-8
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7232
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
auf Bestellung 1641 Stücke Description: MOSFET 2N-CH 20V 25A PPAK 1212-8
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7232
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 23W
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Lieferzeit 21-28 Tag (e)
| SI7617DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A 1212-8 PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 12284 Stücke Description: MOSFET P-CH 30V 35A 1212-8 PPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 13.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| SI1403BDL-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Base Part Number: SI1403
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Power Dissipation (Max): 568mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 4987 Stücke Description: MOSFET P-CH 20V 1.4A SC70-6
Base Part Number: SI1403
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Power Dissipation (Max): 568mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 376 Stücke - Preis und Lieferfrist anzeigen
| SI1403BDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.5A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI1403
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 13252 Stücke Description: MOSFET P-CH 20V 1.5A SC70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 625mW (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Base Part Number: SI1403
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 73 Stücke - Preis und Lieferfrist anzeigen
| SQJ403BEEP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A POWERPAKSO-8
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQJ403
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 2693 Stücke Description: MOSFET P-CH 30V 30A POWERPAKSO-8
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQJ403
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 1742 Stücke - Preis und Lieferfrist anzeigen
| DG403BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 45Ohm
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Charge Injection: 60pC
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -94.8dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG403
auf Bestellung 2250 Stücke Description: IC ANALOG SWITCH SPDT 16SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 45Ohm
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Charge Injection: 60pC
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -94.8dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC
Base Part Number: DG403
Lieferzeit 21-28 Tag (e)
| SISS23DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 50A PPAK 1212-8S
Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
auf Bestellung 2560 Stücke Description: MOSFET P-CH 20V 50A PPAK 1212-8S
Input Capacitance (Ciss) (Max) @ Vds: 8840pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Lieferzeit 21-28 Tag (e)
| SI7164DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 30V
Vgs (Max): ±20V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 825 Stücke Description: MOSFET N-CH 60V 60A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2830pF @ 30V
Vgs (Max): ±20V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 21726 Stücke - Preis und Lieferfrist anzeigen
| DG455EQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Base Part Number: DG455
Charge Injection: 22pC
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3275 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Base Part Number: DG455
Charge Injection: 22pC
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| DG455EY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG455
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
auf Bestellung 330 Stücke Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG455
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 31pf, 34pF
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 118ns, 97ns
Voltage - Supply, Dual (V±): ±5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 5.3Ohm
Lieferzeit 21-28 Tag (e)
auf Bestellung 844 Stücke - Preis und Lieferfrist anzeigen
| SIR170DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIR170
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
auf Bestellung 3000 Stücke Description: MOSFET N-CH 100V 23.2A/95A PPAK
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIR170
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8580 Stücke - Preis und Lieferfrist anzeigen
| SIR170DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Manufacturer: Vishay Siliconix
Base Part Number: SIR170
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2637 Stücke Description: MOSFET N-CH 100V 23.2A/95A PPAK
Manufacturer: Vishay Siliconix
Base Part Number: SIR170
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8943 Stücke - Preis und Lieferfrist anzeigen
| SIR170DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100 V PWRPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V
Part Status: Active
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
auf Bestellung 5943 Stücke Description: MOSFET N-CH 100 V PWRPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6195pF @ 50V
Part Status: Active
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 5637 Stücke - Preis und Lieferfrist anzeigen
| SI4848DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.7A 8-SOIC
Base Part Number: SI4848
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 6336 Stücke Description: MOSFET N-CH 150V 2.7A 8-SOIC
Base Part Number: SI4848
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 65000 Stücke - Preis und Lieferfrist anzeigen
| SIR422DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8002 Stücke Description: MOSFET N-CH 40V 40A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| SIR800DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
auf Bestellung 6790 Stücke Description: MOSFET N-CH 20V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Lieferzeit 21-28 Tag (e)
| SIR166DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
auf Bestellung 143 Stücke - Preis und Lieferfrist anzeigen
| SIZ340DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PWRPAIR3X3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-Power33 (3x3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 16.7W, 31W
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Base Part Number: SIZ340
auf Bestellung 6327 Stücke Description: MOSFET 2N-CH 30V 30A PWRPAIR3X3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-Power33 (3x3)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 16.7W, 31W
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A, 40A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Base Part Number: SIZ340
Lieferzeit 21-28 Tag (e)
| SQD50P04-09L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A
Drain to Source Voltage (Vdss): 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
auf Bestellung 2036 Stücke Description: MOSFET P-CH 40V 50A
Drain to Source Voltage (Vdss): 40V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6675pF @ 20V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Lieferzeit 21-28 Tag (e)
| IRFR9024PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A DPAK
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
| IRFR9024TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
auf Bestellung 139 Stücke - Preis und Lieferfrist anzeigen
| IRFR9024TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
auf Bestellung 139 Stücke Description: MOSFET P-CH 60V 8.8A DPAK
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Lieferzeit 21-28 Tag (e)
| IRFR9024TRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
| IRFR9024 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| IRFR9024TR |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
| IRFR9024TRL |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
| IRFR9024TRR |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 8.8A DPAK
Part Status: Obsolete
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| SI7850ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10.3A/12A PPAK
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 10.3A/12A PPAK
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 3049 Stücke - Preis und Lieferfrist anzeigen
| SI7850ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10.3A/12A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 408 Stücke Description: MOSFET N-CH 60V 10.3A/12A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2641 Stücke - Preis und Lieferfrist anzeigen
| SI7850ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V POWERPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 2641 Stücke Description: MOSFET N-CH 60V POWERPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 408 Stücke - Preis und Lieferfrist anzeigen
| SIRB40DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 46.2W
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 40V POWERPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 46.2W
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
| IRF634STRRPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 480 Stücke Description: MOSFET N-CH 250V 8.1A D2PAK
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| SIR664DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 6025 Stücke Description: MOSFET N-CH 60V 60A PPAK SO-8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 2968 Stücke - Preis und Lieferfrist anzeigen
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