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SI7439DP-T1-GE3 SI7439DP-T1-GE3 si7439dp.pdf Vishay Siliconix Description: MOSFET P-CH 150V 3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
SI7431DP-T1-GE3 SI7431DP-T1-GE3 si7431dp.pdf Vishay Siliconix Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
auf Bestellung 3919 Stücke
Lieferzeit 21-28 Tag (e)
SI7772DP-T1-GE3 SI7772DP-T1-GE3 si7772dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 2242 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2261 Stücke - Preis und Lieferfrist anzeigen
SI7456CDP-T1-GE3 SI7456CDP-T1-GE3 si7456cd.pdf Vishay Siliconix Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8972 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13478 Stücke - Preis und Lieferfrist anzeigen
SI7430DP-T1-GE3 SI7430DP-T1-GE3 si7430dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 26A PPAK SO-8
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
auf Bestellung 2859 Stücke
Lieferzeit 21-28 Tag (e)
SI7434DP-T1-GE3 SI7434DP-T1-GE3 si7434dp.pdf Vishay Siliconix Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
auf Bestellung 5730 Stücke
Lieferzeit 21-28 Tag (e)
SI7120ADN-T1-GE3 SI7120ADN-T1-GE3 si7120ad.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 974 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25500 Stücke - Preis und Lieferfrist anzeigen
SISS46DN-T1-GE3 SISS46DN-T1-GE3 siss46dn.pdf Vishay Siliconix Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 100V PPAK 1212-8S
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SISS46
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
auf Bestellung 5990 Stücke
Lieferzeit 21-28 Tag (e)
IRFR420TRPBF IRFR420TRPBF sihfr420.pdf Vishay Siliconix Description: MOSFET N-CH 500V 2.4A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 942 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1404 Stücke - Preis und Lieferfrist anzeigen
SIS410DN-T1-GE3 SIS410DN-T1-GE3 sis410dn.pdf Vishay Siliconix Description: MOSFET N-CH 20V 35A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 154531 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 272317 Stücke - Preis und Lieferfrist anzeigen
SIR410DP-T1-GE3 SIR410DP-T1-GE3 sir410d.pdf Vishay Siliconix Description: MOSFET N-CH 20V 35A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 10468 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
IRFPF40PBF IRFPF40PBF 91250.pdf Vishay Siliconix Description: MOSFET N-CH 900V 4.7A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD23N06-31-GE3 SUD23N06-31-GE3 sud23n06.pdf Vishay Siliconix Description: MOSFET N-CH 60V 21.4A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 60V 21.4A TO-252
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUD23
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
auf Bestellung 2052 Stücke
Lieferzeit 21-28 Tag (e)
SI2316BDS-T1-GE3 SI2316BDS-T1-GE3 si2316bd.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
auf Bestellung 66528 Stücke
Lieferzeit 21-28 Tag (e)
SI2316BDS-T1-E3 SI2316BDS-T1-E3 si2316bd.pdf Vishay Siliconix Description: MOSFET N-CH 30V 4.5A SOT-23
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 4795 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21000 Stücke - Preis und Lieferfrist anzeigen
DG2535EDN-T1-GE4 DG2535EDN-T1-GE4 dg2535e_dg2733e.pdf Vishay Siliconix Description: IC ANALOG SWITCH DUAL 10QFN
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 500mOhm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2285 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 135 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRPBF IRFR210TRPBF sihfr210.pdf Vishay Siliconix Description: MOSFET N-CH 200V 2.6A DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
auf Bestellung 1672 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
SI4114DY-T1-E3 SI4114DY-T1-E3 si4114dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 20A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 67194 Stücke - Preis und Lieferfrist anzeigen
SI4114DY-T1-GE3 SI4114DY-T1-GE3 si4114dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 20A 8-SOIC
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
auf Bestellung 2320 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7113 Stücke - Preis und Lieferfrist anzeigen
SI4288DY-T1-GE3 SI4288DY-T1-GE3 si4288dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 9.2A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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Lieferzeit 21-28 Tag (e)
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SI4946BEY-T1-E3 SI4946BEY-T1-E3 si4946be.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 6.5A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4946
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.7W
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
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Lieferzeit 21-28 Tag (e)
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SQJ858AEP-T1_GE3 SQJ858AEP-T1_GE3 sqj858aep.pdf Vishay Siliconix Description: MOSFET N-CH 40V 58A
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 16756 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19799 Stücke - Preis und Lieferfrist anzeigen
SI4447ADY-T1-GE3 SI4447ADY-T1-GE3 si4447ad.pdf Vishay Siliconix Description: MOSFET P-CH 40V 7.2A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 11929 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2075 Stücke - Preis und Lieferfrist anzeigen
SISS80DN-T1-GE3 SISS80DN-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 20V 58.3A/210A PPAK
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG408DY-T1-E3 DG408DY-T1-E3 dg408.pdf Vishay Siliconix Description: IC MULTIPLEXER 8X1 16SOIC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG408
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Charge Injection: 20pC
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SI7414DN-T1-GE3 SI7414DN-T1-GE3 71738.pdf Vishay Siliconix Description: MOSFET N-CH 60V 5.6A 1212-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG1412EEQ-T1-GE4 DG1412EEQ-T1-GE4 dg1411e.pdf Vishay Siliconix Description: IC SWITCH SPST QUAD 16TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -104dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Charge Injection: -41pC
-3db Bandwidth: 150MHz
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Channel-to-Channel Matching (ΔRon): 40mOhm
On-State Resistance (Max): 1.5Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Base Part Number: DG1412
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SIHH11N60EF-T1-GE3 SIHH11N60EF-T1-GE3 sihh11n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Lieferzeit 21-28 Tag (e)
3+ 10.4 EUR
10+ 9.35 EUR
100+ 7.66 EUR
500+ 6.52 EUR
1000+ 5.9 EUR
Vishay Siliconix Description: MOSFET N-CH 600V 11A POWERPAK8X8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH11
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1078pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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SIHH11N60E-T1-GE3 SIHH11N60E-T1-GE3 sihh11n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 11A POWERPAK8X8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 339mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1076pF @ 100V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50ATRLP IRFS11N50ATRLP 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFS11
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
Vgs (Max): ±30V
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IRFS11N50ATRRP IRFS11N50ATRRP 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A D2PAK
Base Part Number: IRFS11
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG406DN-T1-E3 DG406DN-T1-E3 dg406.pdf Vishay Siliconix Description: IC MULTIPLEXER 16X1 28PLCC
Base Part Number: DG406
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
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DG406BDN-T1-E3 DG406BDN-T1-E3 dg406b.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT 28PLCC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel-to-Channel Matching (ΔRon): 3Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Charge Injection: 11pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Cut Tape (CT)
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Vishay Siliconix Description: IC ANALOG SWITCH SPDT 28PLCC
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 3Ohm
On-State Resistance (Max): 60Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Charge Injection: 11pC
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DG406BDW-T1-E3 DG406BDW-T1-E3 dg406b.pdf Vishay Siliconix Description: IC SWITCH SINGLE 28SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Charge Injection: 11pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel-to-Channel Matching (ΔRon): 3Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC SWITCH SINGLE 28SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Charge Injection: 11pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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Vishay Siliconix Description: IC SWITCH SINGLE 28SOIC
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 3Ohm
On-State Resistance (Max): 60Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Charge Injection: 11pC
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Supply, Dual (V±): ±5V ~ 20V
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DG406DW-T1-E3 DG406DW-T1-E3 dg406.pdf Vishay Siliconix Description: IC SWITCH SINGLE 28SOIC
Base Part Number: DG406
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC SWITCH SINGLE 28SOIC
Base Part Number: DG406
Supplier Device Package: 28-SOIC
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
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SI4062DY-T1-GE3 SI4062DY-T1-GE3 si4062dy.pdf Vishay Siliconix Description: Description: MOSFET N-CH 60V 32.1A 8-SO
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Power Dissipation (Max): 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Base Part Number: SI4062
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Power Dissipation (Max): 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4062
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1022R-T1-GE3 SI1022R-T1-GE3 71331.pdf Vishay Siliconix Description: MOSFET N-CH 60V 330MA SC-75A
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1022
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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SQ2389ES-T1_GE3 SQ2389ES-T1_GE3 sq2389es.pdf Vishay Siliconix Description: MOSFET P-CHAN 40V SO23
Base Part Number: SQ2389
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
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IRFU024 IRFU024 sihfr024.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A TO251AA
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG612EEQ-T1-GE4 DG612EEQ-T1-GE4 dg611e.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST TSSOP16
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -74dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Charge Injection: 1.4pC
-3db Bandwidth: 1GHz
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 115Ohm
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DG612EEN-T1-GE4 DG612EEN-T1-GE4 dg611e.pdf Vishay Siliconix Description: IC AMP/VIDEO/MUX LP 16QFN
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -74dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Charge Injection: 1.4pC
-3db Bandwidth: 1GHz
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 115Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO
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IRFR9110TRPBF IRFR9110TRPBF sihfr911.pdf Vishay Siliconix Description: MOSFET P-CH 100V 3.1A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG470EQ-T1-E3 DG470EQ-T1-E3 dg469.pdf Vishay Siliconix Description: IC SWITCH SNGL SPDT 8MSOP
Base Part Number: DG470
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Charge Injection: 58pC
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -63dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
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SI7868ADP-T1-E3 SI7868ADP-T1-E3 73384.pdf Vishay Siliconix Description: MOSFET N-CH 20V 40A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
Vgs (Max): ±16V
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SI7858ADP-T1-E3 SI7858ADP-T1-E3 73164.pdf Vishay Siliconix Description: MOSFET N-CH 12V 20A PPAK SO-8
Power Dissipation (Max): 1.9W (Ta)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SI7464DP-T1-E3 SI7464DP-T1-E3 si7464dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
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SI6968BEDQ-T1-E3 SI6968BEDQ-T1-E3 si6968be.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Base Part Number: SI6968
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI5515DC-T1-E3 SI5515DC-T1-E3 72221.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4.4A 1206-8
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5515
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4936BDY-T1-E3 SI4936BDY-T1-E3 si4936bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.9A 8-SOIC
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Base Part Number: SI4936
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A
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SI4842BDY-T1-E3 SI4842BDY-T1-E3 73532.pdf Vishay Siliconix Description: MOSFET N-CH 30V 28A 8-SOIC
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 30V
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SI4431BDY-T1-E3 SI4431BDY-T1-E3 si4431bd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.7A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
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IRFR9120TRPBF IRFR9120TRPBF 91280.pdf Vishay Siliconix Description: MOSFET P-CH 100V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Base Part Number: IRFR9120
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
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SI3932DV-T1-GE3 SI3932DV-T1-GE3 si3932dv.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 3.7A 6-TSOP
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: 2 N-Channel (Dual)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3932
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
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SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 si7884bd.pdf Vishay Siliconix Description: MOSFET N-CH 40V 58A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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SI4835DDY-T1-E3 SI4835DDY-T1-E3 si4835ddy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 13A 8-SOIC
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
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IRFR9014TRPBF IRFR9014TRPBF sihfr901.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.1A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQD50P06-15L_GE3 SQD50P06-15L_GE3 sqd50p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI3590DV-T1-GE3 SI3590DV-T1-GE3 si3590dv.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 2.5A 6-TSOP
Base Part Number: SI3590
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: MOSFET N/P-CH 30V 2.5A 6-TSOP
Base Part Number: SI3590
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI7450DP-T1-GE3 SI7450DP-T1-GE3 si7450dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 19153 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3508 Stücke - Preis und Lieferfrist anzeigen
SI1032R-T1-GE3 SI1032R-T1-GE3 si1032r.pdf Vishay Siliconix Description: MOSFET N-CH 20V 140MA SC-75A
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
auf Bestellung 67755 Stücke
Lieferzeit 21-28 Tag (e)
SI2308CDS-T1-GE3 SI2308CDS-T1-GE3 si2308cds.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 60V 2.6A SOT23-3
Power Dissipation (Max): 1.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SI2308DS-T1-E3 SI2308DS-T1-E3 70797.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
DG413DQ-T1-E3 DG413DQ-T1-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST LV 16-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Base Part Number: DG413
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 6131 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2498 Stücke - Preis und Lieferfrist anzeigen
SIC402BCD-T1-GE3 SIC402BCD-T1-GE3 sic402abcd.pdf Vishay Siliconix Description: IC REG DL BUCK/LNR SYNC MLP55-32
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Frequency - Switching: 200kHz ~ 1MHz
Number of Outputs: 2
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Base Part Number: SIC402
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerVFQFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
w/Sequencer: No
w/Supervisor: No
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Lieferzeit 21-28 Tag (e)
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SIC402ACD-T1-GE3 SIC402ACD-T1-GE3 sic402abcd.pdf Vishay Siliconix Description: IC REG DL BUCK/LNR SYNC MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Frequency - Switching: 200kHz ~ 1MHz
Number of Outputs: 2
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIC402
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
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SIC401ACD-T1-GE3 SIC401ACD-T1-GE3 sic401abcd.pdf Vishay Siliconix Description: IC REG DL BUCK/LNR SYNC MLP55-32
Frequency - Switching: 200kHz ~ 1MHz
Number of Outputs: 2
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIC401
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 17V
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A
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Lieferzeit 21-28 Tag (e)
IRFP460LC IRFP460LC 91235.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247-3
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
SIR120DP-T1-RE3 SIR120DP-T1-RE3 sir120dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V PP SO-8
Base Part Number: SIR120
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
auf Bestellung 5900 Stücke
Lieferzeit 21-28 Tag (e)
SI4420BDY-T1-E3 SI4420BDY-T1-E3 73067.pdf Vishay Siliconix Description: MOSFET N-CH 30V 9.5A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1702 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14298 Stücke - Preis und Lieferfrist anzeigen
SI7149ADP-T1-GE3 SI7149ADP-T1-GE3 si7149adp.pdf Vishay Siliconix Description: MOSFET P-CH 30V 50A PPAK SO-8
Base Part Number: SI7149
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10991 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2280 Stücke - Preis und Lieferfrist anzeigen
SUM65N20-30-E3 SUM65N20-30-E3 71702.pdf Vishay Siliconix Description: MOSFET N-CH 200V 65A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUM65
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
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Lieferzeit 21-28 Tag (e)
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SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 si2318cd.pdf Vishay Siliconix Description: MOSFET N-CH 40V 5.6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 12549 Stücke
Lieferzeit 21-28 Tag (e)
IRFP460 IRFP460 91237.pdf Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Packaging: Tube
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 441 Stücke - Preis und Lieferfrist anzeigen
IRFP460P IRFP460P TO247AC_Side.jpg Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP460NPBF IRFP460NPBF IRFP460N,SiHFP460N.pdf Vishay Siliconix Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4427BDY-T1-GE3 SI4427BDY-T1-GE3 si4427bd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 9.7A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs (Max): ±12V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7120DN-T1-GE3 SI7120DN-T1-GE3 si7120dn.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6.3A 1212-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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TN2404K-T1-E3 TN2404K-T1-E3 tn2404k.pdf Vishay Siliconix Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
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Lieferzeit 21-28 Tag (e)
SI4850EY-T1-GE3 SI4850EY-T1-GE3 71146.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6A 8-SOIC
Base Part Number: SI4850
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.7W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60V
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Lieferzeit 21-28 Tag (e)
SI4904DY-T1-GE3 SI4904DY-T1-GE3 si4904dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 8A 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4904
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
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Lieferzeit 21-28 Tag (e)
SI4900DY-T1-GE3 SI4900DY-T1-GE3 si4900dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Base Part Number: SI4900
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 181 Stücke
Lieferzeit 21-28 Tag (e)
SUM90N06-4M4P-E3 SUM90N06-4M4P-E3 sum90n06.pdf Vishay Siliconix Description: MOSFET N-CH 60V 90A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
SIHH14N65E-T1-GE3 SIHH14N65E-T1-GE3 sihh14n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 15A PWRPAK 8X8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH14
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
auf Bestellung 5961 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2926 Stücke - Preis und Lieferfrist anzeigen
SI7439DP-T1-GE3 si7439dp.pdf
SI7439DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
SI7431DP-T1-GE3 si7431dp.pdf
SI7431DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
auf Bestellung 3919 Stücke
Lieferzeit 21-28 Tag (e)
SI7772DP-T1-GE3 si7772dp.pdf
SI7772DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.6A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 2242 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2261 Stücke - Preis und Lieferfrist anzeigen
SI7456CDP-T1-GE3 si7456cd.pdf
SI7456CDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8972 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13478 Stücke - Preis und Lieferfrist anzeigen
SI7430DP-T1-GE3 si7430dp.pdf
SI7430DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 64W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
auf Bestellung 2859 Stücke
Lieferzeit 21-28 Tag (e)
SI7434DP-T1-GE3 si7434dp.pdf
SI7434DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.3A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
auf Bestellung 5730 Stücke
Lieferzeit 21-28 Tag (e)
SI7120ADN-T1-GE3 si7120ad.pdf
SI7120ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 1212-8 PPAK
Package / Case: PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 974 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25500 Stücke - Preis und Lieferfrist anzeigen
SISS46DN-T1-GE3 siss46dn.pdf
SISS46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12.5/45.3A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5990 Stücke - Preis und Lieferfrist anzeigen
SISS46DN-T1-GE3 siss46dn.pdf
SISS46DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V PPAK 1212-8S
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 45.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SISS46
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
auf Bestellung 5990 Stücke
Lieferzeit 21-28 Tag (e)
IRFR420TRPBF sihfr420.pdf
IRFR420TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.4A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 942 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1404 Stücke - Preis und Lieferfrist anzeigen
SIS410DN-T1-GE3 sis410dn.pdf
SIS410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 154531 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 272317 Stücke - Preis und Lieferfrist anzeigen
SIR410DP-T1-GE3 sir410d.pdf
SIR410DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 10468 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2300 Stücke - Preis und Lieferfrist anzeigen
IRFPF40PBF 91250.pdf
IRFPF40PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 4.7A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD23N06-31-GE3 sud23n06.pdf
SUD23N06-31-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2052 Stücke - Preis und Lieferfrist anzeigen
SUD23N06-31-GE3 sud23n06.pdf
SUD23N06-31-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO-252
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUD23
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
auf Bestellung 2052 Stücke
Lieferzeit 21-28 Tag (e)
SI2316BDS-T1-GE3 si2316bd.pdf
SI2316BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
auf Bestellung 66528 Stücke
Lieferzeit 21-28 Tag (e)
SI2316BDS-T1-E3 si2316bd.pdf
SI2316BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT-23
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 4795 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21000 Stücke - Preis und Lieferfrist anzeigen
DG2535EDN-T1-GE4 dg2535e_dg2733e.pdf
DG2535EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH DUAL 10QFN
Supplier Device Package: 10-DFN (3x3)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 500mOhm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2285 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 135 Stücke - Preis und Lieferfrist anzeigen
IRFR210TRPBF sihfr210.pdf
IRFR210TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
auf Bestellung 1672 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
SI4114DY-T1-E3 si4114dy.pdf
SI4114DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 67194 Stücke - Preis und Lieferfrist anzeigen
SI4114DY-T1-GE3 si4114dy.pdf
SI4114DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A 8-SOIC
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 10V
auf Bestellung 2320 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7113 Stücke - Preis und Lieferfrist anzeigen
SI4288DY-T1-GE3 si4288dy.pdf
SI4288DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 9.2A 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Drain to Source Voltage (Vdss): 40V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
auf Bestellung 12640 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 54628 Stücke - Preis und Lieferfrist anzeigen
SI4946BEY-T1-E3 si4946be.pdf
SI4946BEY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.5A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4946
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.7W
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
auf Bestellung 8542 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 65016 Stücke - Preis und Lieferfrist anzeigen
SQJ858AEP-T1_GE3 sqj858aep.pdf
SQJ858AEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Power Dissipation (Max): 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
auf Bestellung 16756 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19799 Stücke - Preis und Lieferfrist anzeigen
SI4447ADY-T1-GE3 si4447ad.pdf
SI4447ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.2A 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 11929 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2075 Stücke - Preis und Lieferfrist anzeigen
SISS80DN-T1-GE3
SISS80DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 58.3A/210A PPAK
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 58.3A (Ta), 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG408DY-T1-E3 dg408.pdf
DG408DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 8X1 16SOIC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG408
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Charge Injection: 20pC
auf Bestellung 1031 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7430 Stücke - Preis und Lieferfrist anzeigen
SI7414DN-T1-GE3 71738.pdf
SI7414DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A 1212-8
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 16757 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25500 Stücke - Preis und Lieferfrist anzeigen
DG1412EEQ-T1-GE4 dg1411e.pdf
DG1412EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST QUAD 16TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -104dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Charge Injection: -41pC
-3db Bandwidth: 150MHz
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Channel-to-Channel Matching (ΔRon): 40mOhm
On-State Resistance (Max): 1.5Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Base Part Number: DG1412
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8340 Stücke
Lieferzeit 21-28 Tag (e)
SIHH11N60EF-T1-GE3 sihh11n60ef.pdf
SIHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4869 Stücke - Preis und Lieferfrist anzeigen
SIHH11N60EF-T1-GE3 sihh11n60ef.pdf
SIHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A PPAK 8 X 8
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 100 V
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1857 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3012 Stücke - Preis und Lieferfrist anzeigen
3+ 10.4 EUR
10+ 9.35 EUR
100+ 7.66 EUR
500+ 6.52 EUR
1000+ 5.9 EUR
SIHH11N60EF-T1-GE3 sihh11n60ef.pdf
SIHH11N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A POWERPAK8X8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH11
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1078pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 357mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3012 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1857 Stücke - Preis und Lieferfrist anzeigen
SIHH11N60E-T1-GE3 sihh11n60e.pdf
SIHH11N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 11A POWERPAK8X8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 339mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1076pF @ 100V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50ATRLP 91286.pdf
IRFS11N50ATRLP
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRFS11
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
Vgs (Max): ±30V
auf Bestellung 816 Stücke
Lieferzeit 21-28 Tag (e)
IRFS11N50ATRRP 91286.pdf
IRFS11N50ATRRP
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Base Part Number: IRFS11
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 592 Stücke
Lieferzeit 21-28 Tag (e)
DG406DN-T1-E3 dg406.pdf
DG406DN-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER 16X1 28PLCC
Base Part Number: DG406
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 1005 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 690 Stücke - Preis und Lieferfrist anzeigen
DG406BDN-T1-E3 dg406b.pdf
DG406BDN-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 28PLCC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel-to-Channel Matching (ΔRon): 3Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Charge Injection: 11pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-PLCC (11.51x11.51)
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-LCC (J-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 75 Stücke
Lieferzeit 21-28 Tag (e)
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DG406BDN-T1-E3 dg406b.pdf
DG406BDN-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 28PLCC
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 3Ohm
On-State Resistance (Max): 60Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 28-PLCC (11.51x11.51)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Charge Injection: 11pC
auf Bestellung 485 Stücke
Lieferzeit 21-28 Tag (e)
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DG406BDW-T1-E3 dg406b.pdf
DG406BDW-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE 28SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Charge Injection: 11pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
On-State Resistance (Max): 60Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Channel-to-Channel Matching (ΔRon): 3Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1456 Stücke - Preis und Lieferfrist anzeigen
DG406BDW-T1-E3 dg406b.pdf
DG406BDW-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE 28SOIC
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Charge Injection: 11pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 28-SOIC
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
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DG406BDW-T1-E3 dg406b.pdf
DG406BDW-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE 28SOIC
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 3Ohm
On-State Resistance (Max): 60Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 6pF, 108pF
Charge Injection: 11pC
Switch Time (Ton, Toff) (Max): 107ns, 88ns
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Supply, Dual (V±): ±5V ~ 20V
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DG406DW-T1-E3 dg406.pdf
DG406DW-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE 28SOIC
Base Part Number: DG406
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG406DW-T1-E3 dg406.pdf
DG406DW-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SINGLE 28SOIC
Base Part Number: DG406
Supplier Device Package: 28-SOIC
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Charge Injection: 15pC
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 5Ohm
On-State Resistance (Max): 100Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
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SI4062DY-T1-GE3 si4062dy.pdf
SI4062DY-T1-GE3
Hersteller: Vishay Siliconix
Description: Description: MOSFET N-CH 60V 32.1A 8-SO
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Power Dissipation (Max): 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Base Part Number: SI4062
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Power Dissipation (Max): 7.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3175pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4062
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1022R-T1-GE3 71331.pdf
SI1022R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 330MA SC-75A
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI1022
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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SQ2389ES-T1_GE3 sq2389es.pdf
SQ2389ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V SO23
Base Part Number: SQ2389
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 3W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 20V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
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Lieferzeit 21-28 Tag (e)
IRFU024 sihfr024.pdf
IRFU024
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A TO251AA
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG612EEQ-T1-GE4 dg611e.pdf
DG612EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST TSSOP16
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -74dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Charge Injection: 1.4pC
-3db Bandwidth: 1GHz
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 115Ohm
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DG612EEN-T1-GE4 dg611e.pdf
DG612EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC AMP/VIDEO/MUX LP 16QFN
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -74dB @ 10MHz
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Charge Injection: 1.4pC
-3db Bandwidth: 1GHz
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 115Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Switch Circuit: SPST - NO
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IRFR9110TRPBF sihfr911.pdf
IRFR9110TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 3.1A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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DG470EQ-T1-E3 dg469.pdf
DG470EQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SNGL SPDT 8MSOP
Base Part Number: DG470
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Channel Capacitance (CS(off), CD(off)): 37pF, 85pF
Charge Injection: 58pC
Switch Time (Ton, Toff) (Max): 166ns, 108ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 120mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -63dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
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Lieferzeit 21-28 Tag (e)
SI7868ADP-T1-E3 73384.pdf
SI7868ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6110pF @ 10V
Vgs (Max): ±16V
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SI7858ADP-T1-E3 73164.pdf
SI7858ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 20A PPAK SO-8
Power Dissipation (Max): 1.9W (Ta)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® SO-8
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SI7464DP-T1-E3 si7464dp.pdf
SI7464DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
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SI6968BEDQ-T1-E3 si6968be.pdf
SI6968BEDQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Base Part Number: SI6968
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI5515DC-T1-E3 72221.pdf
SI5515DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.4A 1206-8
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI5515
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4936BDY-T1-E3 si4936bd.pdf
SI4936BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Base Part Number: SI4936
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.8W
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.9A
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SI4842BDY-T1-E3 73532.pdf
SI4842BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 28A 8-SOIC
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 30V
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SI4431BDY-T1-E3 si4431bd.pdf
SI4431BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
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IRFR9120TRPBF 91280.pdf
IRFR9120TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±20V
Base Part Number: IRFR9120
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
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SI3932DV-T1-GE3 si3932dv.pdf
SI3932DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.7A 6-TSOP
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: 2 N-Channel (Dual)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3932
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A
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SI7884BDP-T1-GE3 si7884bd.pdf
SI7884BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Lieferzeit 21-28 Tag (e)
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SI4835DDY-T1-E3 si4835ddy.pdf
SI4835DDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8-SOIC
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
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IRFR9014TRPBF sihfr901.pdf
IRFR9014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SQD50P06-15L_GE3 sqd50p06.pdf
SQD50P06-15L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SI3590DV-T1-GE3 si3590dv.pdf
SI3590DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6-TSOP
Base Part Number: SI3590
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI3590DV-T1-GE3 si3590dv.pdf
SI3590DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6-TSOP
Base Part Number: SI3590
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SI7450DP-T1-GE3 si7450dp.pdf
SI7450DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 19153 Stücke
Lieferzeit 21-28 Tag (e)
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SI1032R-T1-GE3 si1032r.pdf
SI1032R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC-75A
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
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Lieferzeit 21-28 Tag (e)
SI2308CDS-T1-GE3 si2308cds.pdf
SI2308CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.6A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI2308CDS-T1-GE3 si2308cds.pdf
SI2308CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.6A SOT23-3
Power Dissipation (Max): 1.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 144mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 140 Stücke
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SI2308DS-T1-E3 70797.pdf
SI2308DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
DG413DQ-T1-E3 dg411.pdf
DG413DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Base Part Number: DG413
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 6131 Stücke
Lieferzeit 21-28 Tag (e)
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SIC402BCD-T1-GE3 sic402abcd.pdf
SIC402BCD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Frequency - Switching: 200kHz ~ 1MHz
Number of Outputs: 2
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Base Part Number: SIC402
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerVFQFN
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
w/Sequencer: No
w/Supervisor: No
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SIC402ACD-T1-GE3 sic402abcd.pdf
SIC402ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Voltage/Current - Output 1: 0.6V ~ 5.5V, 10A
Frequency - Switching: 200kHz ~ 1MHz
Number of Outputs: 2
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIC402
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 28V
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
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SIC401ACD-T1-GE3 sic401abcd.pdf
SIC401ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC MLP55-32
Frequency - Switching: 200kHz ~ 1MHz
Number of Outputs: 2
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIC401
Supplier Device Package: PowerPAK® MLP55-32
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 17V
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: Adj to 0.75V, 200mA
Voltage/Current - Output 1: 0.6V ~ 5.5V, 15A
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IRFP460LC техническая информация 91235.pdf
IRFP460LC
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR120DP-T1-RE3 sir120dp.pdf
SIR120DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V PP SO-8
Base Part Number: SIR120
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
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SI4420BDY-T1-E3 73067.pdf
SI4420BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9.5A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.4W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI7149ADP-T1-GE3 si7149adp.pdf
SI7149ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A PPAK SO-8
Base Part Number: SI7149
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10991 Stücke
Lieferzeit 21-28 Tag (e)
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SUM65N20-30-E3 71702.pdf
SUM65N20-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 65A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUM65
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
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SI2318CDS-T1-GE3 si2318cd.pdf
SI2318CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 5.6A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 12549 Stücke
Lieferzeit 21-28 Tag (e)
IRFP460 91237.pdf
IRFP460
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Packaging: Tube
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFP460P TO247AC_Side.jpg
IRFP460P
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFP460NPBF IRFP460N,SiHFP460N.pdf
IRFP460NPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 280W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4427BDY-T1-GE3 si4427bd.pdf
SI4427BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9.7A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs (Max): ±12V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7120DN-T1-GE3 si7120dn.pdf
SI7120DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.3A 1212-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 25500 Stücke - Preis und Lieferfrist anzeigen
TN2404K-T1-E3 tn2404k.pdf
TN2404K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 240V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
auf Bestellung 4312 Stücke
Lieferzeit 21-28 Tag (e)
SI4850EY-T1-GE3 71146.pdf
SI4850EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8-SOIC
Base Part Number: SI4850
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.7W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 60V
auf Bestellung 2997 Stücke
Lieferzeit 21-28 Tag (e)
SI4904DY-T1-GE3 si4904dy.pdf
SI4904DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4904
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.25W
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
auf Bestellung 7706 Stücke
Lieferzeit 21-28 Tag (e)
SI4900DY-T1-GE3 si4900dy.pdf
SI4900DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Base Part Number: SI4900
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 181 Stücke
Lieferzeit 21-28 Tag (e)
SUM90N06-4M4P-E3 sum90n06.pdf
SUM90N06-4M4P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6190pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
SIHH14N65E-T1-GE3 sihh14n65e.pdf
SIHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PWRPAK 8X8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH14
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1712pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
auf Bestellung 5961 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2926 Stücke - Preis und Lieferfrist anzeigen
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