Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SQD50N04-5M6_T4GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 50A TO252AA Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 40V 50A TO252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA |
auf Bestellung 2468 Stücke Lieferzeit 21-28 Tag (e) |
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SI2333DS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 4.1A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI2333 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 750mW (Ta) |
auf Bestellung 95075 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 950 Stücke - Preis und Lieferfrist anzeigen
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SIR606DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 37A POWERPAKSO Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V Power Dissipation (Max): 44.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR606 |
auf Bestellung 4780 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 37A POWERPAKSO Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V Power Dissipation (Max): 44.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR606 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SIZ346DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 30V 17/30A 8POWER33 Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 16W, 16.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5950 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 30V 17/30A 8POWER33 Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 16W, 16.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) |
auf Bestellung 5169 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5950 Stücke - Preis und Lieferfrist anzeigen
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SI4559ADY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A Drain to Source Voltage (Vdss): 60V FET Type: N and P-Channel Power - Max: 3.1W, 3.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100000 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 3.1W, 3.4W Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate Part Status: Active FET Type: N and P-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI4559 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
auf Bestellung 32623 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 100000 Stücke - Preis und Lieferfrist anzeigen
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DG411DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16-TSSOP Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Switch Time (Ton, Toff) (Max): 175ns, 145ns Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -85dB @ 1MHz Charge Injection: 5pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 5V ~ 44V Supplier Device Package: 16-TSSOP On-State Resistance (Max): 35Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SI4559ADY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A Drain to Source Voltage (Vdss): 60V FET Type: N and P-Channel Power - Max: 3.1W, 3.4W Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 132623 Stücke - Preis und Lieferfrist anzeigen
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SI4963BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2P-CH 20V 4.9A 8-SOIC Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.9A FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI4963 |
auf Bestellung 20349 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 98859 Stücke - Preis und Lieferfrist anzeigen
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SIHB16N50C-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 16A D2PAK Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIHB16 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 250W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
auf Bestellung 998 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 990 Stücke - Preis und Lieferfrist anzeigen
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SQS405ENW-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 16A POWERPAK1212 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 39W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) Base Part Number: SQS405 Package / Case: PowerPAK® 1212-8 |
auf Bestellung 1977 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1977 Stücke - Preis und Lieferfrist anzeigen
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SQS405EN-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 12V 16A PPAK1212-8 Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SQS405 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 39W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V |
auf Bestellung 15000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 25990 Stücke - Preis und Lieferfrist anzeigen
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SI4136DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 46A 8-SOIC Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Base Part Number: SI4136 Package / Case: 8-SOIC (0.154", 3.90mm Width) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 9105 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6294 Stücke - Preis und Lieferfrist anzeigen
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SI4164DY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 30A 8-SOIC Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3W (Ta), 6W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) |
auf Bestellung 11522 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1709 Stücke - Preis und Lieferfrist anzeigen
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SIHH27N60EF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 29A PPAK 8 X 8 FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 202W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2715 Stücke - Preis und Lieferfrist anzeigen
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SIHB065N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 40A D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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DG2034EDN-T1-GE4 |
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Vishay Siliconix |
Description: IC SWITCH SP4T SINGLE 12QFN Packaging: Tape & Reel (TR) Channel-to-Channel Matching (ΔRon): 20mOhm Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Crosstalk: -71dB @ 1MHz Charge Injection: -2.6pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 12-QFN (3x3) -3db Bandwidth: 166MHz On-State Resistance (Max): 2.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 2nA Channel Capacitance (CS(off), CD(off)): 7pF, - Switch Time (Ton, Toff) (Max): 25ns, 20ns Mounting Type: Surface Mount Package / Case: 12-VFQFN Exposed Pad |
auf Bestellung 4490 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4563 Stücke - Preis und Lieferfrist anzeigen
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SIZ926DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 25V 8-POWERPAIR Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: 2 N-Channel (Dual) Power - Max: 20.2W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET 2 N-CH 25V 8-POWERPAIR Part Status: Active Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.2V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 25V FET Type: 2 N-Channel (Dual) Power - Max: 20.2W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 1328 Stücke Lieferzeit 21-28 Tag (e) |
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DG2034EDN-T1-GE4 |
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Vishay Siliconix |
Description: IC SWITCH SP4T SINGLE 12QFN Current - Leakage (IS(off)) (Max): 2nA Channel Capacitance (CS(off), CD(off)): 7pF, - Switch Time (Ton, Toff) (Max): 25ns, 20ns Channel-to-Channel Matching (ΔRon): 20mOhm Multiplexer/Demultiplexer Circuit: 4:1 Charge Injection: -2.6pC Crosstalk: -71dB @ 1MHz Switch Circuit: SP4T Number of Circuits: 1 Part Status: Active Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 12-QFN (3x3) -3db Bandwidth: 166MHz On-State Resistance (Max): 2.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 12-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 4563 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4490 Stücke - Preis und Lieferfrist anzeigen
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SISS66DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 49.1/178.3A PPAK Supplier Device Package: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) FET Feature: Schottky Diode (Body) Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V Base Part Number: SISS66 Manufacturer: Vishay Siliconix Package / Case: PowerPAK® 1212-8S Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 6695 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 49.1/178.3A PPAK Supplier Device Package: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) FET Feature: Schottky Diode (Body) Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SISS66 Manufacturer: Vishay Siliconix Package / Case: PowerPAK® 1212-8S |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SIRC10DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 43W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3985 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 43W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 4397 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3985 Stücke - Preis und Lieferfrist anzeigen
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SISS22DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 25A/90.6A PPAK Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3) Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Base Part Number: SISS22 Package / Case: PowerPAK® 1212-8S |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 9902 Stücke - Preis und Lieferfrist anzeigen
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SQJ407EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 60A POWERPAKSO-8 Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Base Part Number: SQJ407 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 68W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4063 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 60A POWERPAKSO-8 Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Base Part Number: SQJ407 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 68W (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 3192 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4063 Stücke - Preis und Lieferfrist anzeigen
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IRF840AL |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 8A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SI4491EDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 17.3A 8SO Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.8V @ 250µA Power Dissipation (Max): 3.1W (Ta), 6.9W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2315 Stücke Lieferzeit 21-28 Tag (e) |
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SI9407BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 60V 4.7A 8SO Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
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SIHP100N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 30A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 979 Stücke Lieferzeit 21-28 Tag (e) |
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SQP90142E_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 78.5A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Last Time Buy Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SUM90142E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 90A TO263 Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Part Status: Active Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V |
auf Bestellung 795 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 495 Stücke - Preis und Lieferfrist anzeigen
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SUP90142E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 90A TO220AB Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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IRFS11N50ATRRP |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 11A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 592 Stücke - Preis und Lieferfrist anzeigen
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IRFS11N50ATRLP |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO263AB Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 816 Stücke - Preis und Lieferfrist anzeigen
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SIUD402ED-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 1A PPAK 0806 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 730mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 8V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 10V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 0806 Package / Case: PowerPAK® 0806 Base Part Number: SIUD402 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SQJ469EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 80V 32A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Base Part Number: SQJ469 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 100W (Tc) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active FET Type: P-Channel |
auf Bestellung 7882 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2188 Stücke - Preis und Lieferfrist anzeigen
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| SQJ410EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 32A POWERPAKSO-8 Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Package / Case: PowerPAK® SO-8 Part Status: Active Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 83W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 32A POWERPAKSO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Part Status: Active Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V |
auf Bestellung 2785 Stücke Lieferzeit 21-28 Tag (e) |
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SIJ494DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 36.8A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V Power Dissipation (Max): 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIJ494 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 150V 36.8A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V Power Dissipation (Max): 69.4W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIJ494 |
auf Bestellung 1572 Stücke Lieferzeit 21-28 Tag (e) |
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SIA485DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 150V 1.6A PPAK SC70 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 75V Power Dissipation (Max): 15.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Package / Case: PowerPAK® SC-70-6 Base Part Number: SIA485 |
auf Bestellung 2965 Stücke Lieferzeit 21-28 Tag (e) |
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SISS67DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 30V 60A PPAK1212-8S Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V Power Dissipation (Max): 65.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S Base Part Number: SISS67 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8630 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET P-CH 30V 60A PPAK1212-8S Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V Power Dissipation (Max): 65.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S Base Part Number: SISS67 |
auf Bestellung 3694 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8630 Stücke - Preis und Lieferfrist anzeigen
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SIP12108ADMP-T1GE4 |
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Vishay Siliconix |
Description: IC REG BUCK ADJUSTABLE 5A 16MLP Base Part Number: SIP121 Supplier Device Package: 16-MLP (3x3) Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Synchronous Rectifier: Yes Frequency - Switching: 200kHz ~ 4MHz Current - Output: 5A Voltage - Output (Max): 4.68V Voltage - Output (Min/Fixed): 0.6V Voltage - Input (Max): 5.5V Voltage - Input (Min): 2.8V Number of Outputs: 1 Output Type: Adjustable Topology: Buck Output Configuration: Positive Function: Step-Down Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIR872DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 150V 53.7A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR872 |
auf Bestellung 5455 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SQ4850EY-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 12A 8SO Base Part Number: SQ4850 Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 6.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 4557 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 800700 Stücke - Preis und Lieferfrist anzeigen
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SQM50P06-15L_GE3 |
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Vishay Siliconix |
Description: MOSFET P-CHANNEL 60V 50A TO263 Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SQM50P |
auf Bestellung 1854 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET P-CHANNEL 60V 50A TO263 Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SQM50P |
auf Bestellung 1600 Stücke Lieferzeit 21-28 Tag (e) |
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SIHH120N60E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 24A PPAK 8 X 8 Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2329 Stücke - Preis und Lieferfrist anzeigen
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SIHG105N60EF-GE3 |
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Vishay Siliconix |
Description: MOSFET EF SERIES TO-247AC Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V FET Type: N-Channel Packaging: Tape & Reel (TR) Part Status: Active Base Part Number: SIHG105 Package / Case: TO-247-3 Supplier Device Package: TO-247AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 208W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V |
auf Bestellung 500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1021 Stücke - Preis und Lieferfrist anzeigen
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SIA436DJ-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 8V 12A PPAK SC70-6 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Tape & Reel (TR) Part Status: Active Manufacturer: Vishay Siliconix Base Part Number: SIA436 Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Supplier Device Package: Out of Bounds Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V Vgs (Max): ±5V Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V Vgs(th) (Max) @ Id: 800mV @ 250µA Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 8V |
auf Bestellung 27000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 37344 Stücke - Preis und Lieferfrist anzeigen
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DG508BEN-T1-GE4 |
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Vishay Siliconix |
Description: IC MUX ANALOG SINGLE 8CH 16QFN Channel-to-Channel Matching (ΔRon): 10Ohm Multiplexer/Demultiplexer Circuit: 8:1 Crosstalk: -88dB @ 1MHz Charge Injection: 2pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 250MHz On-State Resistance (Max): 380Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Cut Tape (CT) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 3pF, 13pF Switch Time (Ton, Toff) (Max): 250ns, 240ns |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12374 Stücke - Preis und Lieferfrist anzeigen
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SI7113ADN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 10.8A PPAK Manufacturer: Vishay Siliconix Package / Case: PowerPAK® 1212-8 Base Part Number: SI7113 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 27.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8940 Stücke - Preis und Lieferfrist anzeigen
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DG418BDQ-T1-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SPST 8MSOP Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: DG418 Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 89ns, 80ns Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V On-State Resistance (Max): 25Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active |
auf Bestellung 2370 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 12500 Stücke - Preis und Lieferfrist anzeigen
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DG418BDY-T1-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH SPST 8SOIC Base Part Number: DG418 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Charge Injection: 38pC Switch Time (Ton, Toff) (Max): 89ns, 80ns Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V On-State Resistance (Max): 25Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 2358 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
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DG418DY-T1-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH CMOS 8SOIC Operating Temperature: -40°C ~ 85°C (TA) Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Charge Injection: 60pC Switch Time (Ton, Toff) (Max): 175ns, 145ns Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 12V On-State Resistance (Max): 35Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: DG418 Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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DG418LEDQ-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 8MSOP Manufacturer: Vishay Siliconix Base Part Number: DG418 Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Crosstalk: -72dB @ 1MHz Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 11pF, 32pF Charge Injection: 26pC Switch Time (Ton, Toff) (Max): 40ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V On-State Resistance (Max): 9Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 2146 Stücke Lieferzeit 21-28 Tag (e) |
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DG418LEDY-T1-GE4 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 8SOIC Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 11pF, 32pF Switch Time (Ton, Toff) (Max): 40ns, 35ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Crosstalk: -72dB @ 1MHz Charge Injection: 26pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 8-SO On-State Resistance (Max): 9Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Number of Circuits: 1 Part Status: Active |
auf Bestellung 60 Stücke Lieferzeit 21-28 Tag (e) |
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DG418LEDQ-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 8MSOP Base Part Number: DG418 Supplier Device Package: 8-MSOP Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Crosstalk: -72dB @ 1MHz Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 11pF, 32pF Charge Injection: 26pC Switch Time (Ton, Toff) (Max): 40ns, 35ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V On-State Resistance (Max): 9Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2146 Stücke - Preis und Lieferfrist anzeigen
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DG418LDQ-T1-E3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH CMOS 8MSOP Packaging: Cut Tape (CT) Part Status: Obsolete Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 20Ohm Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Switch Time (Ton, Toff) (Max): 43ns, 31ns Charge Injection: 1pC Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -71dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Supplier Device Package: 8-MSOP Base Part Number: DG418 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SQJB68EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 100V POWERPAK SO8 Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Manufacturer: Vishay Siliconix Base Part Number: SQJB68 |
auf Bestellung 265 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 411 Stücke - Preis und Lieferfrist anzeigen
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SIRA88DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 45.5A POWERPAKSO Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIRA88 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 45.5A POWERPAKSO Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIRA88 |
auf Bestellung 2203 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
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SIHP21N80AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 17.4A TO220AB Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 32W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V Vgs (Max): ±30V Base Part Number: SIHP21 Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
auf Bestellung 998 Stücke Lieferzeit 21-28 Tag (e) |
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SIHG21N80AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 17.4A TO247AC Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 32W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: SIHG21 Package / Case: TO-247-3 Supplier Device Package: TO-247AC Mounting Type: Through Hole |
auf Bestellung 550 Stücke Lieferzeit 21-28 Tag (e) |
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| SIHW21N80AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 17.4A TO247AD Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V Power Dissipation (Max): 32W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3 Manufacturer: Vishay Siliconix Base Part Number: SIHW21 |
auf Bestellung 526 Stücke Lieferzeit 21-28 Tag (e) |
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SI7172ADP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V PPAK SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.1V @ 250µA Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11702 Stücke - Preis und Lieferfrist anzeigen
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SQM60N06-15_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 56A TO263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 107W (Tc) Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 68 Stücke - Preis und Lieferfrist anzeigen
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DG612EEN-T1-GE4 |
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Vishay Siliconix |
Description: IC AMP/VIDEO/MUX LP 16QFN Part Status: Active Number of Circuits: 4 Current - Leakage (IS(off)) (Max): 100pA Channel Capacitance (CS(off), CD(off)): 3pF, 3pF Switch Time (Ton, Toff) (Max): 50ns, 35ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Channel-to-Channel Matching (ΔRon): 600mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -74dB @ 10MHz Packaging: Tape & Reel (TR) Charge Injection: 1.4pC Voltage - Supply, Dual (V±): ±3V ~ 5V Voltage - Supply, Single (V+): 3V ~ 12V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 1GHz On-State Resistance (Max): 115Ohm |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1875 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC AMP/VIDEO/MUX LP 16QFN Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Cut Tape (CT) Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 100pA Channel Capacitance (CS(off), CD(off)): 3pF, 3pF Switch Time (Ton, Toff) (Max): 50ns, 35ns Channel-to-Channel Matching (ΔRon): 600mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -74dB @ 10MHz Charge Injection: 1.4pC Voltage - Supply, Dual (V±): ±3V ~ 5V Voltage - Supply, Single (V+): 3V ~ 12V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 1GHz On-State Resistance (Max): 115Ohm |
auf Bestellung 6176 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1875 Stücke - Preis und Lieferfrist anzeigen
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SQ1912AEEH-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V POWERPAK SC70-6 Base Part Number: SQ1912 Manufacturer: Vishay Siliconix Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.5W Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5820 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2N-CH 20V POWERPAK SC70-6 Base Part Number: SQ1912 Manufacturer: Vishay Siliconix Supplier Device Package: PowerPAK® SC-70-6 Dual Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.5W Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 5630 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5820 Stücke - Preis und Lieferfrist anzeigen
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SQ1912EH-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 20V 800MA SC70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.5W Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Manufacturer: Vishay Siliconix Base Part Number: SQ1912 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET 2 N-CH 20V 800MA SC70-6 Packaging: Cut Tape (CT) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Manufacturer: Vishay Siliconix Base Part Number: SQ1912 |
auf Bestellung 1510 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
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SIHB21N65EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 21A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 208W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Base Part Number: SIHB21 Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drain to Source Voltage (Vdss): 650V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
auf Bestellung 693 Stücke Lieferzeit 21-28 Tag (e) |
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SI7450DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 3.2A PPAK SO-8 FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI7450 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) |
auf Bestellung 4748 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 111618 Stücke - Preis und Lieferfrist anzeigen
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SQS420EN-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 8A PPAK1212-8 Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SQS420 Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 18W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel |
auf Bestellung 3055 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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DG636EEN-T1-GE4 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 16MINIQFN Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 700MHz Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF Switch Time (Ton, Toff) (Max): 46ns, 55ns Channel-to-Channel Matching (ΔRon): 300mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT On-State Resistance (Max): 96Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Crosstalk: -62dB @ 1MHz Charge Injection: -0.33pC Voltage - Supply, Dual (V±): ±3V ~ 8V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: IC ANALOG SWITCH 16MINIQFN Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF Switch Time (Ton, Toff) (Max): 46ns, 55ns Channel-to-Channel Matching (ΔRon): 300mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -62dB @ 1MHz Charge Injection: -0.33pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 700MHz On-State Resistance (Max): 96Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Cut Tape (CT) |
auf Bestellung 2405 Stücke Lieferzeit 21-28 Tag (e) |
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DG636EEQ-T1-GE4 |
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Vishay Siliconix |
Description: IC SWITCH DUAL SPDT 14TSSOP Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Crosstalk: -62dB @ 10MHz Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF Charge Injection: -0.33pC -3db Bandwidth: 700MHz Switch Time (Ton, Toff) (Max): 56ns, 61ns Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Channel-to-Channel Matching (ΔRon): 2Ohm On-State Resistance (Max): 96Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Part Status: Active Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SUD50P10-43L-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 100V 37.1A TO252 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V Vgs (Max): ±20V Base Part Number: SUD50 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: TO-252, (D-Pak) |
auf Bestellung 3107 Stücke Lieferzeit 21-28 Tag (e) |
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SUM90330E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 35.1A D2PAK Packaging: Tape & Reel (TR) Part Status: Active Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 200V 35.1A D2PAK Packaging: Cut Tape (CT) Part Status: Active Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
auf Bestellung 261 Stücke Lieferzeit 21-28 Tag (e) |
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SIHFR430ATRR-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5A DPAK Base Part Number: SIHFR430 Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Power Dissipation (Max): 110W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIHFR430ATRL-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5A DPAK Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 500V FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: SIHFR430 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIHFR430ATR-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5A DPAK Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) Part Status: Active FET Type: N-Channel Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix Base Part Number: SIHFR430 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 110W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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DG1413EEN-T1-GE4 |
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Vishay Siliconix |
Description: IC SWITCH SPST QUAD 16QFN Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 24pF, 23pF Switch Time (Ton, Toff) (Max): 140ns, 110ns Channel-to-Channel Matching (ΔRon): 40mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -104dB @ 1MHz Charge Injection: -41pC Voltage - Supply, Dual (V±): ±4.5V ~ 15V Voltage - Supply, Single (V+): 4.5V ~ 24V Supplier Device Package: 16-QFN (4x4) -3db Bandwidth: 150MHz On-State Resistance (Max): 1.5Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-VQFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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SIHB120N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 25A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 5 Stücke Lieferzeit 21-28 Tag (e) |
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SI7155DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 31A/100A PPAK Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| SQD50N04-5M6_T4GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2468 Stücke - Preis und Lieferfrist anzeigen
| SQD50N04-5M6_T4GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
auf Bestellung 2468 Stücke Description: MOSFET N-CH 40V 50A TO252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Lieferzeit 21-28 Tag (e)
| SI2333DS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2333
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
auf Bestellung 95075 Stücke Description: MOSFET P-CH 12V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2333
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Lieferzeit 21-28 Tag (e)
auf Bestellung 950 Stücke - Preis und Lieferfrist anzeigen
| SIR606DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
auf Bestellung 4780 Stücke Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIR606DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
auf Bestellung 3000 Stücke Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
Lieferzeit 21-28 Tag (e)
auf Bestellung 4780 Stücke - Preis und Lieferfrist anzeigen
| SIZ346DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 11119 Stücke - Preis und Lieferfrist anzeigen
| SIZ346DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
auf Bestellung 5169 Stücke Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8950 Stücke - Preis und Lieferfrist anzeigen
| SI4559ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 60V 5.3A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
auf Bestellung 132623 Stücke - Preis und Lieferfrist anzeigen
| SI4559ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: N and P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4559
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 32623 Stücke Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: N and P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4559
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 100000 Stücke - Preis und Lieferfrist anzeigen
| DG411DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16-TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
| SI4559ADY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 60V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 132623 Stücke - Preis und Lieferfrist anzeigen
| SI4963BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4963
auf Bestellung 20349 Stücke Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4963
Lieferzeit 21-28 Tag (e)
auf Bestellung 98859 Stücke - Preis und Lieferfrist anzeigen
| SIHB16N50C-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A D2PAK
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHB16
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
auf Bestellung 998 Stücke Description: MOSFET N-CH 500V 16A D2PAK
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHB16
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 990 Stücke - Preis und Lieferfrist anzeigen
| SQS405ENW-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A POWERPAK1212
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
auf Bestellung 1977 Stücke Description: MOSFET P-CH 12V 16A POWERPAK1212
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Lieferzeit 21-28 Tag (e)
auf Bestellung 1977 Stücke - Preis und Lieferfrist anzeigen
| SQS405EN-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A PPAK1212-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
auf Bestellung 15000 Stücke Description: MOSFET P-CH 12V 16A PPAK1212-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Lieferzeit 21-28 Tag (e)
auf Bestellung 25990 Stücke - Preis und Lieferfrist anzeigen
| SI4136DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 46A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Base Part Number: SI4136
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9105 Stücke Description: MOSFET N-CH 20V 46A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Base Part Number: SI4136
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6294 Stücke - Preis und Lieferfrist anzeigen
| SI4164DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 11522 Stücke Description: MOSFET N-CH 30V 30A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1709 Stücke - Preis und Lieferfrist anzeigen
| SIHH27N60EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A PPAK 8 X 8
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 29A PPAK 8 X 8
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 2715 Stücke - Preis und Lieferfrist anzeigen
| SIHB065N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 40A D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
| DG2034EDN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T SINGLE 12QFN
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -71dB @ 1MHz
Charge Injection: -2.6pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
auf Bestellung 4490 Stücke Description: IC SWITCH SP4T SINGLE 12QFN
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -71dB @ 1MHz
Charge Injection: -2.6pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Lieferzeit 21-28 Tag (e)
auf Bestellung 4563 Stücke - Preis und Lieferfrist anzeigen
|
| SIZ926DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 25V 8-POWERPAIR
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 25V 8-POWERPAIR
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1328 Stücke - Preis und Lieferfrist anzeigen
| SIZ926DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 25V 8-POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1328 Stücke Description: MOSFET 2 N-CH 25V 8-POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| DG2034EDN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T SINGLE 12QFN
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Charge Injection: -2.6pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SP4T
Number of Circuits: 1
Part Status: Active
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4563 Stücke Description: IC SWITCH SP4T SINGLE 12QFN
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Charge Injection: -2.6pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SP4T
Number of Circuits: 1
Part Status: Active
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 4490 Stücke - Preis und Lieferfrist anzeigen
|
| SISS66DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6695 Stücke Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SISS66DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Lieferzeit 21-28 Tag (e)
auf Bestellung 6695 Stücke - Preis und Lieferfrist anzeigen
| SIRC10DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 8382 Stücke - Preis und Lieferfrist anzeigen
| SIRC10DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 4397 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3985 Stücke - Preis und Lieferfrist anzeigen
| SISS22DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A/90.6A PPAK
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Base Part Number: SISS22
Package / Case: PowerPAK® 1212-8S
auf Bestellung 3000 Stücke Description: MOSFET N-CH 60V 25A/90.6A PPAK
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Base Part Number: SISS22
Package / Case: PowerPAK® 1212-8S
Lieferzeit 21-28 Tag (e)
auf Bestellung 9902 Stücke - Preis und Lieferfrist anzeigen
| SQJ407EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 3000 Stücke Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 7255 Stücke - Preis und Lieferfrist anzeigen
| SQJ407EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3192 Stücke Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 7063 Stücke - Preis und Lieferfrist anzeigen
| IRF840AL |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 8A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
| SI4491EDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 17.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2315 Stücke Description: MOSFET P-CH 30V 17.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| SI9407BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 60V 4.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
| SIHP100N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 979 Stücke Description: MOSFET N-CH 600V 30A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
| SQP90142E_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 78.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 78.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| SUM90142E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO263
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
auf Bestellung 795 Stücke Description: MOSFET N-CH 200V 90A TO263
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 495 Stücke - Preis und Lieferfrist anzeigen
| SUP90142E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 90A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
| IRFS11N50ATRRP |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
auf Bestellung 592 Stücke - Preis und Lieferfrist anzeigen
| IRFS11N50ATRLP |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO263AB
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 11A TO263AB
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 816 Stücke - Preis und Lieferfrist anzeigen
| SIUD402ED-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1A PPAK 0806
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 730mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 0806
Package / Case: PowerPAK® 0806
Base Part Number: SIUD402
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 1A PPAK 0806
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 730mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 0806
Package / Case: PowerPAK® 0806
Base Part Number: SIUD402
| SQJ469EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Base Part Number: SQJ469
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
auf Bestellung 7882 Stücke Description: MOSFET P-CH 80V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Base Part Number: SQJ469
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 2188 Stücke - Preis und Lieferfrist anzeigen
| SQJ410EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 32A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 32A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
auf Bestellung 2785 Stücke - Preis und Lieferfrist anzeigen
| SQJ410EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 32A POWERPAKSO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
auf Bestellung 2785 Stücke Description: MOSFET N-CH 30V 32A POWERPAKSO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Lieferzeit 21-28 Tag (e)
| SIJ494DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
auf Bestellung 1572 Stücke - Preis und Lieferfrist anzeigen
| SIJ494DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
auf Bestellung 1572 Stücke Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
Lieferzeit 21-28 Tag (e)
| SIA485DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.6A PPAK SC70
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 75V
Power Dissipation (Max): 15.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA485
auf Bestellung 2965 Stücke Description: MOSFET P-CH 150V 1.6A PPAK SC70
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 75V
Power Dissipation (Max): 15.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA485
Lieferzeit 21-28 Tag (e)
| SISS67DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
auf Bestellung 3000 Stücke Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
Lieferzeit 21-28 Tag (e)
auf Bestellung 12324 Stücke - Preis und Lieferfrist anzeigen
| SISS67DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
auf Bestellung 3694 Stücke Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
Lieferzeit 21-28 Tag (e)
auf Bestellung 11630 Stücke - Preis und Lieferfrist anzeigen
| SIP12108ADMP-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 5A 16MLP
Base Part Number: SIP121
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 200kHz ~ 4MHz
Current - Output: 5A
Voltage - Output (Max): 4.68V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 2.8V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC REG BUCK ADJUSTABLE 5A 16MLP
Base Part Number: SIP121
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 200kHz ~ 4MHz
Current - Output: 5A
Voltage - Output (Max): 4.68V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 2.8V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
| SIR872DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR872
auf Bestellung 5455 Stücke Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR872
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SQ4850EY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A 8SO
Base Part Number: SQ4850
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4557 Stücke Description: MOSFET N-CH 60V 12A 8SO
Base Part Number: SQ4850
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 800700 Stücke - Preis und Lieferfrist anzeigen
| SQM50P06-15L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
auf Bestellung 1854 Stücke Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
Lieferzeit 21-28 Tag (e)
auf Bestellung 1600 Stücke - Preis und Lieferfrist anzeigen
| SQM50P06-15L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
auf Bestellung 1600 Stücke Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
Lieferzeit 21-28 Tag (e)
auf Bestellung 1854 Stücke - Preis und Lieferfrist anzeigen
| SIHH120N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 24A PPAK 8 X 8
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
auf Bestellung 2329 Stücke - Preis und Lieferfrist anzeigen
| SIHG105N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET EF SERIES TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: SIHG105
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
auf Bestellung 500 Stücke Description: MOSFET EF SERIES TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: SIHG105
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 1021 Stücke - Preis und Lieferfrist anzeigen
| SIA436DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SIA436
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
auf Bestellung 27000 Stücke Description: MOSFET N-CH 8V 12A PPAK SC70-6
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SIA436
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
Lieferzeit 21-28 Tag (e)
auf Bestellung 37344 Stücke - Preis und Lieferfrist anzeigen
| DG508BEN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
auf Bestellung 12374 Stücke - Preis und Lieferfrist anzeigen
| SI7113ADN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 10.8A PPAK
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7113
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 10.8A PPAK
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7113
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 8940 Stücke - Preis und Lieferfrist anzeigen
| DG418BDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8MSOP
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
auf Bestellung 2370 Stücke Description: IC ANALOG SWITCH SPST 8MSOP
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 12500 Stücke - Preis und Lieferfrist anzeigen
| DG418BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2358 Stücke Description: IC ANALOG SWITCH SPST 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
| DG418DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH CMOS 8SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
| DG418LEDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2146 Stücke Description: IC ANALOG SWITCH 8MSOP
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| DG418LEDY-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
auf Bestellung 60 Stücke Description: IC ANALOG SWITCH 8SOIC
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Lieferzeit 21-28 Tag (e)
| DG418LEDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH 8MSOP
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2146 Stücke - Preis und Lieferfrist anzeigen
| DG418LDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8MSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 20Ohm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -71dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP
Base Part Number: DG418
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH CMOS 8MSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 20Ohm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -71dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP
Base Part Number: DG418
| SQJB68EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SQJB68
auf Bestellung 265 Stücke Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SQJB68
Lieferzeit 21-28 Tag (e)
auf Bestellung 411 Stücke - Preis und Lieferfrist anzeigen
| SIRA88DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
auf Bestellung 4406 Stücke - Preis und Lieferfrist anzeigen
| SIRA88DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
auf Bestellung 2203 Stücke Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
Lieferzeit 21-28 Tag (e)
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
| SIHP21N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Base Part Number: SIHP21
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 998 Stücke Description: MOSFET N-CH 800V 17.4A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Base Part Number: SIHP21
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
| SIHG21N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHG21
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
auf Bestellung 550 Stücke Description: MOSFET N-CH 800V 17.4A TO247AC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHG21
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
| SIHW21N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AD
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Power Dissipation (Max): 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Manufacturer: Vishay Siliconix
Base Part Number: SIHW21
auf Bestellung 526 Stücke Description: MOSFET N-CH 800V 17.4A TO247AD
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Power Dissipation (Max): 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Manufacturer: Vishay Siliconix
Base Part Number: SIHW21
Lieferzeit 21-28 Tag (e)
| SI7172ADP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 11702 Stücke - Preis und Lieferfrist anzeigen
| SQM60N06-15_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 56A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 56A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
auf Bestellung 68 Stücke - Preis und Lieferfrist anzeigen
| DG612EEN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC AMP/VIDEO/MUX LP 16QFN
Part Status: Active
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Packaging: Tape & Reel (TR)
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
auf Bestellung 3000 Stücke Description: IC AMP/VIDEO/MUX LP 16QFN
Part Status: Active
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Packaging: Tape & Reel (TR)
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
Lieferzeit 21-28 Tag (e)
auf Bestellung 8051 Stücke - Preis und Lieferfrist anzeigen
|
| DG612EEN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC AMP/VIDEO/MUX LP 16QFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
auf Bestellung 6176 Stücke Description: IC AMP/VIDEO/MUX LP 16QFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
Lieferzeit 21-28 Tag (e)
auf Bestellung 4875 Stücke - Preis und Lieferfrist anzeigen
|
| SQ1912AEEH-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 11450 Stücke - Preis und Lieferfrist anzeigen
| SQ1912AEEH-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5630 Stücke Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8820 Stücke - Preis und Lieferfrist anzeigen
| SQ1912EH-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 20V 800MA SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 20V 800MA SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
auf Bestellung 3501 Stücke - Preis und Lieferfrist anzeigen
| SQ1912EH-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 20V 800MA SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
auf Bestellung 1510 Stücke Description: MOSFET 2 N-CH 20V 800MA SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
Lieferzeit 21-28 Tag (e)
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
| SIHB21N65EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 21A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: SIHB21
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 693 Stücke Description: MOSFET N-CH 650V 21A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: SIHB21
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
| SI7450DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7450
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
auf Bestellung 4748 Stücke Description: MOSFET N-CH 200V 3.2A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7450
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 111618 Stücke - Preis und Lieferfrist anzeigen
| SQS420EN-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS420
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 18W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3055 Stücke Description: MOSFET N-CH 20V 8A PPAK1212-8
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS420
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 18W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| DG636EEN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH 16MINIQFN
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Packaging: Tape & Reel (TR)
auf Bestellung 2405 Stücke - Preis und Lieferfrist anzeigen
| DG636EEN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
auf Bestellung 2405 Stücke Description: IC ANALOG SWITCH 16MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| DG636EEQ-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 14TSSOP
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -62dB @ 10MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Charge Injection: -0.33pC
-3db Bandwidth: 700MHz
Switch Time (Ton, Toff) (Max): 56ns, 61ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 96Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH DUAL SPDT 14TSSOP
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -62dB @ 10MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Charge Injection: -0.33pC
-3db Bandwidth: 700MHz
Switch Time (Ton, Toff) (Max): 56ns, 61ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 96Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
| SUD50P10-43L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: TO-252, (D-Pak)
auf Bestellung 3107 Stücke Description: MOSFET P-CH 100V 37.1A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: TO-252, (D-Pak)
Lieferzeit 21-28 Tag (e)
| SUM90330E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 261 Stücke - Preis und Lieferfrist anzeigen
| SUM90330E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 261 Stücke Description: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Lieferzeit 21-28 Tag (e)
| SIHFR430ATRR-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Base Part Number: SIHFR430
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 5A DPAK
Base Part Number: SIHFR430
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
| SIHFR430ATRL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SIHFR430
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 5A DPAK
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SIHFR430
| SIHFR430ATR-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHFR430
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 5A DPAK
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHFR430
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
| DG1413EEN-T1-GE4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST QUAD 16QFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH SPST QUAD 16QFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
| SIHB120N60E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5 Stücke Description: MOSFET N-CH 600V 25A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
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| SI7155DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 31A/100A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 31A/100A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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