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Name: SIRA02DP-T1-GE3
Brand: Vishay Siliconix
SKU: 3178399-3
Price: 3660.00 EUR
Availability: InStock

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SIR788DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 60A PPAK SO-8

Produkt ist nicht verfügbar

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SIRA02DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V

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SIRA10DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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3000+	0.75 EUR

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SIS468DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 80V 30A PPAK1212-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel

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SISA10DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 30A PPAK1212-8
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA

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3000+	0.93 EUR

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SI4190ADY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 100V 18.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 7584 Stücke:

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5+	4.96 EUR
10+	3.2 EUR
100+	2.2 EUR
500+	1.76 EUR
1000+	1.64 EUR

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SIA418DJ-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 12A SC70-6

auf Bestellung 5871 Stücke:

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SIJ482DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 80V 60A PPAK SO-8

auf Bestellung 2004 Stücke:

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SIR788DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 60A PPAK SO-8

Produkt ist nicht verfügbar

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SIRA02DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V

auf Bestellung 4822 Stücke:

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5+	4.99 EUR
10+	3.21 EUR
100+	2.2 EUR
500+	1.77 EUR
1000+	1.65 EUR

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SIRA10DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 4291 Stücke:

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13+	1.68 EUR
17+	1.3 EUR
100+	1.04 EUR
500+	0.95 EUR
1000+	0.84 EUR

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SIS468DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 80V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 4695 Stücke:

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6+	3.72 EUR
10+	2.37 EUR
100+	1.59 EUR
500+	1.26 EUR
1000+	1.15 EUR

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SISA10DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 5263 Stücke:

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10+	2.18 EUR
11+	1.95 EUR
100+	1.52 EUR
500+	1.25 EUR
1000+	0.99 EUR

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SIA418DJ-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 12A SC70-6

auf Bestellung 5871 Stücke:

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SIZ710DT-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 20V 16A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Cut Tape (CT)

auf Bestellung 19342 Stücke:

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8+	2.78 EUR
10+	2.3 EUR
100+	1.78 EUR
500+	1.51 EUR
1000+	1.23 EUR

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SIZ710DT-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 20V 16A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PowerPair™

auf Bestellung 9000 Stücke:

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3000+	1.15 EUR
6000+	1.11 EUR
9000+	1.05 EUR

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SI4628DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 38A 8SOIC

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SI4210DY-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 30V 6.5A 8-SOIC

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SIE726DF-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 60A POLARPAK

Produkt ist nicht verfügbar

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SIE876DF-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 60A POLARPAK

Produkt ist nicht verfügbar

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SI4628DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 38A 8SOIC

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SI4825DDY-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 30V 14.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V

auf Bestellung 5903 Stücke:

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8+	2.78 EUR
12+	1.76 EUR
100+	1.17 EUR
500+	0.92 EUR
1000+	0.83 EUR

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SIR424DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)

auf Bestellung 1572 Stücke:

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10+	2.28 EUR
14+	1.55 EUR
100+	1.17 EUR
500+	0.95 EUR
1000+	0.84 EUR

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SIR494DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 12V 60A PPAK SO-8

auf Bestellung 11 Stücke:

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10+	2.32 EUR
11+	2.01 EUR

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SiS438DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 16A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 10 V

auf Bestellung 28231 Stücke:

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9+	2.37 EUR
15+	1.49 EUR
100+	0.98 EUR
500+	0.76 EUR
1000+	0.69 EUR

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SUP90N06-5M0P-E3

Vishay Siliconix

Description: MOSFET N-CH 60V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Strip

Produkt ist nicht verfügbar

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SI3433CDV-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V

auf Bestellung 22664 Stücke:

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15+	1.46 EUR
24+	0.9 EUR
100+	0.58 EUR
500+	0.44 EUR
1000+	0.39 EUR

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SI7904BDN-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)

auf Bestellung 5805 Stücke:

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9+	2.45 EUR
11+	2 EUR
100+	1.56 EUR
500+	1.32 EUR
1000+	1.07 EUR

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SIA913ADJ-T1-GE3

Vishay Siliconix

Description: MOSFET 2P-CH 12V 4.5A PPAK8X8
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 6.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)

auf Bestellung 17014 Stücke:

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17+	1.3 EUR
25+	0.87 EUR
100+	0.6 EUR
500+	0.46 EUR
1000+	0.43 EUR

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SIS430DN-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 25V 35A PPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V

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SI4168DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 24A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 26145 Stücke:

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9+	2.57 EUR
12+	1.77 EUR
100+	1.33 EUR
500+	1.15 EUR
1000+	1.02 EUR

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SIA850DJ-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 190V 0.95A SC70-6

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SIR484DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 20A PPAK SO-8

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SI4210DY-T1-GE3

Vishay Siliconix

Description: MOSFET 2N-CH 30V 6.5A 8-SOIC

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SIE726DF-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 60A POLARPAK

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SIR410DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 20V 35A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 4330 Stücke:

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7+	3.2 EUR
11+	2.02 EUR
100+	1.36 EUR
500+	1.06 EUR
1000+	0.98 EUR

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SIR460DP-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 40A PPAK SO-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)

auf Bestellung 25 Stücke:

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7+	3.12 EUR
11+	1.98 EUR

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SUD17N25-165-E3

Vishay Siliconix

Description: MOSFET N-CH 250V 17A TO252

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SI4100DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 100V 6.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 3625 Stücke:

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8+	2.68 EUR
12+	1.88 EUR
100+	1.31 EUR
500+	1.19 EUR
1000+	1.12 EUR

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SI4172DY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 30V 15A 8-SOIC

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SIA811ADJ-T1-GE3

Vishay Siliconix

Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)

auf Bestellung 2751 Stücke:

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13+	1.63 EUR
21+	1.01 EUR
100+	0.65 EUR
500+	0.5 EUR
1000+	0.45 EUR

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SIE876DF-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 60A POLARPAK

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SI4840BDY-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 40V 19A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel

auf Bestellung 7181 Stücke:

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7+	3.08 EUR
10+	2.4 EUR
100+	1.76 EUR
500+	1.4 EUR
1000+	1.36 EUR

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2N7002K-T1-GE3

Vishay Siliconix

Description: MOSFET N-CH 60V 300MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V

auf Bestellung 2369 Stücke:

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38+	0.57 EUR
62+	0.35 EUR
100+	0.21 EUR
500+	0.15 EUR
1000+	0.14 EUR

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DG419BDQ-T1-E3

Vishay Siliconix

Description: IC SWITCH SPDT X 1 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 2667 Stücke:

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4+	5.28 EUR
10+	3.94 EUR
25+	3.61 EUR
100+	3.25 EUR
250+	3.07 EUR
500+	2.96 EUR
1000+	2.88 EUR

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DG419DY-T1-E3

Vishay Siliconix

Description: IC SWITCH SPDT X 1 35OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 10397 Stücke:

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6+	3.81 EUR
10+	2.82 EUR
25+	2.58 EUR
100+	2.3 EUR
250+	2.17 EUR
500+	2.09 EUR
1000+	2.02 EUR

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DG442DY-T1-E3

Vishay Siliconix

Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 2183 Stücke:

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5+	4.3 EUR
10+	3.19 EUR
25+	2.92 EUR
100+	2.61 EUR
250+	2.46 EUR
500+	2.37 EUR
1000+	2.3 EUR

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DG9411DL-T1-E3

Vishay Siliconix

Description: IC ANALOG SWITCH SPDT LV SC70-6

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IRF510STRRPBF

Vishay Siliconix

Description: MOSFET N-CH 100V 5.6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V

auf Bestellung 1392 Stücke:

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6+	3.92 EUR
10+	2.5 EUR
100+	1.69 EUR

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IRF530SPBF

Vishay Siliconix

Description: MOSFET N-CH 100V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V

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IRF530STRRPBF

Vishay Siliconix

Description: MOSFET N-CH 100V 14A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V

auf Bestellung 262 Stücke:

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5+	4.71 EUR
10+	3.03 EUR
100+	2.08 EUR

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IRF540STRLPBF

Vishay Siliconix

Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

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IRF540STRRPBF

Vishay Siliconix

Produkt ist nicht verfügbar

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IRF640STRLPBF

Vishay Siliconix

Description: MOSFET N-CH 200V 18A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

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IRF640STRRPBF

Vishay Siliconix

Produkt ist nicht verfügbar

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IRF740STRLPBF

Vishay Siliconix

Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V

auf Bestellung 4618 Stücke:

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3+	7.22 EUR
10+	4.74 EUR
100+	3.32 EUR

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IRF840ASTRLPBF

Vishay Siliconix

Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V

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IRF9510STRLPBF

Vishay Siliconix

Description: MOSFET P-CH 100V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V

auf Bestellung 790 Stücke:

Lieferzeit 10-14 Tag (e)

4+	5.28 EUR
10+	3.42 EUR
100+	2.36 EUR

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IRF9530SPBF

Vishay Siliconix

Description: MOSFET P-CH 100V 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V

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IRF9540SPBF

Vishay Siliconix

Description: MOSFET P-CH 100V 19A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

auf Bestellung 371 Stücke:

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3+	9.07 EUR
50+	4.7 EUR
100+	4.27 EUR

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SIR788DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8

Produkt ist nicht verfügbar

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SIRA02DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V

auf Bestellung 3000 Stücke:

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3000+	1.45 EUR

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SIRA10DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

auf Bestellung 3000 Stücke:

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Anzahl	Privatkunde
3000+	0.75 EUR

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SIS468DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK1212-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel

auf Bestellung 3000 Stücke:

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3000+	1.01 EUR

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SISA10DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK1212-8
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA

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3000+	0.93 EUR

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SI4190ADY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 7584 Stücke:

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Anzahl	Privatkunde
5+	4.96 EUR
10+	3.2 EUR
100+	2.2 EUR
500+	1.76 EUR
1000+	1.64 EUR

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SIA418DJ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC70-6

auf Bestellung 5871 Stücke:

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SIJ482DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8

auf Bestellung 2004 Stücke:

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SIR788DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8

Produkt ist nicht verfügbar

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SIRA02DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 15 V

auf Bestellung 4822 Stücke:

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Anzahl	Privatkunde
5+	4.99 EUR
10+	3.21 EUR
100+	2.2 EUR
500+	1.77 EUR
1000+	1.65 EUR

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SIRA10DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 4291 Stücke:

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Anzahl	Privatkunde
13+	1.68 EUR
17+	1.3 EUR
100+	1.04 EUR
500+	0.95 EUR
1000+	0.84 EUR

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SIS468DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 4695 Stücke:

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Anzahl	Privatkunde
6+	3.72 EUR
10+	2.37 EUR
100+	1.59 EUR
500+	1.26 EUR
1000+	1.15 EUR

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SISA10DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)

auf Bestellung 5263 Stücke:

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Anzahl	Privatkunde
10+	2.18 EUR
11+	1.95 EUR
100+	1.52 EUR
500+	1.25 EUR
1000+	0.99 EUR

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SIA418DJ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A SC70-6

auf Bestellung 5871 Stücke:

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SIZ710DT-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Cut Tape (CT)

auf Bestellung 19342 Stücke:

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Anzahl	Privatkunde
8+	2.78 EUR
10+	2.3 EUR
100+	1.78 EUR
500+	1.51 EUR
1000+	1.23 EUR

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SIZ710DT-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A, 35A
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PowerPair™

auf Bestellung 9000 Stücke:

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Anzahl	Privatkunde
3000+	1.15 EUR
6000+	1.11 EUR
9000+	1.05 EUR

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SI4628DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC

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SI4210DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.5A 8-SOIC

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SIE726DF-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK

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SIE876DF-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK

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SI4628DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC

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SI4825DDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 15 V

auf Bestellung 5903 Stücke:

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Anzahl	Privatkunde
8+	2.78 EUR
12+	1.76 EUR
100+	1.17 EUR
500+	0.92 EUR
1000+	0.83 EUR

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SIR424DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)

auf Bestellung 1572 Stücke:

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Anzahl	Privatkunde
10+	2.28 EUR
14+	1.55 EUR
100+	1.17 EUR
500+	0.95 EUR
1000+	0.84 EUR

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SIR494DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 60A PPAK SO-8

auf Bestellung 11 Stücke:

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Anzahl	Privatkunde
10+	2.32 EUR
11+	2.01 EUR

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SiS438DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 10 V

auf Bestellung 28231 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
9+	2.37 EUR
15+	1.49 EUR
100+	0.98 EUR
500+	0.76 EUR
1000+	0.69 EUR

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SUP90N06-5M0P-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Strip

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SI3433CDV-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.6W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V

auf Bestellung 22664 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
15+	1.46 EUR
24+	0.9 EUR
100+	0.58 EUR
500+	0.44 EUR
1000+	0.39 EUR

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SI7904BDN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 17.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Cut Tape (CT)

auf Bestellung 5805 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
9+	2.45 EUR
11+	2 EUR
100+	1.56 EUR
500+	1.32 EUR
1000+	1.07 EUR

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SIA913ADJ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A PPAK8X8
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 8V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 6.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)

auf Bestellung 17014 Stücke:

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Anzahl	Privatkunde
17+	1.3 EUR
25+	0.87 EUR
100+	0.6 EUR
500+	0.46 EUR
1000+	0.43 EUR

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SIS430DN-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 35A PPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V

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SI4168DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 26145 Stücke:

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Anzahl	Privatkunde
9+	2.57 EUR
12+	1.77 EUR
100+	1.33 EUR
500+	1.15 EUR
1000+	1.02 EUR

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SIA850DJ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 190V 0.95A SC70-6

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SIR484DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8

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SI4210DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.5A 8-SOIC

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SIE726DF-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A POLARPAK

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SIR410DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)

auf Bestellung 4330 Stücke:

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Anzahl	Privatkunde
7+	3.2 EUR
11+	2.02 EUR
100+	1.36 EUR
500+	1.06 EUR
1000+	0.98 EUR

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SIR460DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)

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7+	3.12 EUR
11+	1.98 EUR

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SUD17N25-165-E3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 17A TO252

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SI4100DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.8A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 3625 Stücke:

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8+	2.68 EUR
12+	1.88 EUR
100+	1.31 EUR
500+	1.19 EUR
1000+	1.12 EUR

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SI4172DY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC

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SIA811ADJ-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.8W (Ta), 6.5W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Cut Tape (CT)

auf Bestellung 2751 Stücke:

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Anzahl	Privatkunde
13+	1.63 EUR
21+	1.01 EUR
100+	0.65 EUR
500+	0.5 EUR
1000+	0.45 EUR

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SIE876DF-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POLARPAK

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SI4840BDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 19A 8SO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel

auf Bestellung 7181 Stücke:

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Anzahl	Privatkunde
7+	3.08 EUR
10+	2.4 EUR
100+	1.76 EUR
500+	1.4 EUR
1000+	1.36 EUR

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2N7002K-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 300MA TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V

auf Bestellung 2369 Stücke:

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Anzahl	Privatkunde
38+	0.57 EUR
62+	0.35 EUR
100+	0.21 EUR
500+	0.15 EUR
1000+	0.14 EUR

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DG419BDQ-T1-E3

Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 25OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 38pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 2667 Stücke:

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Anzahl	Privatkunde
4+	5.28 EUR
10+	3.94 EUR
25+	3.61 EUR
100+	3.25 EUR
250+	3.07 EUR
500+	2.96 EUR
1000+	2.88 EUR

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DG419DY-T1-E3

Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 35OHM 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 8-SOIC
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 60pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 1

auf Bestellung 10397 Stücke:

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Anzahl	Privatkunde
6+	3.81 EUR
10+	2.82 EUR
25+	2.58 EUR
100+	2.3 EUR
250+	2.17 EUR
500+	2.09 EUR
1000+	2.02 EUR

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DG442DY-T1-E3

Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 210ns
Channel-to-Channel Matching (ΔRon): 4Ohm (Max)
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)

auf Bestellung 2183 Stücke:

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Anzahl	Privatkunde
5+	4.3 EUR
10+	3.19 EUR
25+	2.92 EUR
100+	2.61 EUR
250+	2.46 EUR
500+	2.37 EUR
1000+	2.3 EUR

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DG9411DL-T1-E3

Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT LV SC70-6

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IRF510STRRPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V

auf Bestellung 1392 Stücke:

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6+	3.92 EUR
10+	2.5 EUR
100+	1.69 EUR

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IRF530SPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V

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IRF530STRRPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V

auf Bestellung 262 Stücke:

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5+	4.71 EUR
10+	3.03 EUR
100+	2.08 EUR

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IRF540STRLPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V

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IRF540STRRPBF

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IRF640STRLPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 18A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

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IRF640STRRPBF

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IRF740STRLPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V

auf Bestellung 4618 Stücke:

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Anzahl	Privatkunde
3+	7.22 EUR
10+	4.74 EUR
100+	3.32 EUR

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IRF840ASTRLPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V

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IRF9510STRLPBF

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V

auf Bestellung 790 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
4+	5.28 EUR
10+	3.42 EUR
100+	2.36 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

IRF9530SPBF

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V

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Im Einkaufswagen Stück im Wert von UAH

IRF9540SPBF

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

auf Bestellung 371 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Privatkunde
3+	9.07 EUR
50+	4.7 EUR
100+	4.27 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

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