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SQD50N04-5M6_T4GE3 SQD50N04-5M6_T4GE3 sqd50n04-5m6.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 50A TO252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
auf Bestellung 2468 Stücke
Lieferzeit 21-28 Tag (e)
SI2333DS-T1-E3 SI2333DS-T1-E3 72023.pdf Vishay Siliconix Description: MOSFET P-CH 12V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2333
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
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Lieferzeit 21-28 Tag (e)
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SIR606DP-T1-GE3 SIR606DP-T1-GE3 sir606dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIZ346DT-T1-GE3 SIZ346DT-T1-GE3 siz346dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5950 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
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Lieferzeit 21-28 Tag (e)
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SI4559ADY-T1-E3 SI4559ADY-T1-E3 si4559ad.pdf Vishay Siliconix Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: N and P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4559
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 32623 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100000 Stücke - Preis und Lieferfrist anzeigen
DG411DQ-T1-E3 DG411DQ-T1-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4559ADY-T1-E3 SI4559ADY-T1-E3 si4559ad.pdf Vishay Siliconix Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4963BDY-T1-E3 SI4963BDY-T1-E3 72753.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4963
auf Bestellung 20349 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 98859 Stücke - Preis und Lieferfrist anzeigen
SIHB16N50C-E3 SIHB16N50C-E3 sihp16n5.pdf Vishay Siliconix Description: MOSFET N-CH 500V 16A D2PAK
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHB16
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
auf Bestellung 998 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 990 Stücke - Preis und Lieferfrist anzeigen
SQS405ENW-T1_GE3 SQS405ENW-T1_GE3 sqs405en.pdf Vishay Siliconix Description: MOSFET P-CH 12V 16A POWERPAK1212
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
auf Bestellung 1977 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1977 Stücke - Preis und Lieferfrist anzeigen
SQS405EN-T1_GE3 SQS405EN-T1_GE3 sqs405en.pdf Vishay Siliconix Description: MOSFET P-CH 12V 16A PPAK1212-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
auf Bestellung 15000 Stücke
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SI4136DY-T1-GE3 SI4136DY-T1-GE3 si4136dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 46A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Base Part Number: SI4136
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9105 Stücke
Lieferzeit 21-28 Tag (e)
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SI4164DY-T1-GE3 SI4164DY-T1-GE3 si4164dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 30A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Lieferzeit 21-28 Tag (e)
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SIHH27N60EF-T1-GE3 SIHH27N60EF-T1-GE3 sihh27n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 29A PPAK 8 X 8
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2715 Stücke - Preis und Lieferfrist anzeigen
SIHB065N60E-GE3 SIHB065N60E-GE3 sihb065n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 40A D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2034EDN-T1-GE4 DG2034EDN-T1-GE4 dg2034e.pdf Vishay Siliconix Description: IC SWITCH SP4T SINGLE 12QFN
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -71dB @ 1MHz
Charge Injection: -2.6pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
auf Bestellung 4490 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4563 Stücke - Preis und Lieferfrist anzeigen
2500+ 1.97 EUR
SIZ926DT-T1-GE3 SIZ926DT-T1-GE3 siz926dt.pdf Vishay Siliconix Description: MOSFET 2 N-CH 25V 8-POWERPAIR
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2 N-CH 25V 8-POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1328 Stücke
Lieferzeit 21-28 Tag (e)
DG2034EDN-T1-GE4 DG2034EDN-T1-GE4 dg2034e.pdf Vishay Siliconix Description: IC SWITCH SP4T SINGLE 12QFN
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Charge Injection: -2.6pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SP4T
Number of Circuits: 1
Part Status: Active
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 4490 Stücke - Preis und Lieferfrist anzeigen
7+ 3.72 EUR
10+ 3.35 EUR
25+ 3.17 EUR
100+ 2.7 EUR
250+ 2.53 EUR
500+ 2.22 EUR
1000+ 1.97 EUR
SISS66DN-T1-GE3 SISS66DN-T1-GE3 siss66dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
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Lieferzeit 21-28 Tag (e)
SIRC10DP-T1-GE3 SIRC10DP-T1-GE3 sirc10dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3985 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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SISS22DN-T1-GE3 SISS22DN-T1-GE3 siss22dn.pdf Vishay Siliconix Description: MOSFET N-CH 60V 25A/90.6A PPAK
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Base Part Number: SISS22
Package / Case: PowerPAK® 1212-8S
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Lieferzeit 21-28 Tag (e)
auf Bestellung 9902 Stücke - Preis und Lieferfrist anzeigen
SQJ407EP-T1_GE3 SQJ407EP-T1_GE3 sqj407ep.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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IRF840AL IRF840AL sihf840.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4491EDY-T1-GE3 SI4491EDY-T1-GE3 si4491edy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 17.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
SI9407BDY-T1-E3 SI9407BDY-T1-E3 si9407bd.pdf Vishay Siliconix Description: MOSFET P-CH 60V 4.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHP100N60E-GE3 SIHP100N60E-GE3 sihp100n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 30A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 979 Stücke
Lieferzeit 21-28 Tag (e)
SQP90142E_GE3 SQP90142E_GE3 sqp90142e.pdf Vishay Siliconix Description: MOSFET N-CH 200V 78.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90142E-GE3 SUM90142E-GE3 sum90142e.pdf Vishay Siliconix Description: MOSFET N-CH 200V 90A TO263
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
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Lieferzeit 21-28 Tag (e)
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SUP90142E-GE3 SUP90142E-GE3 sup90142e.pdf Vishay Siliconix Description: MOSFET N-CH 200V 90A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50ATRRP IRFS11N50ATRRP 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFS11N50ATRLP IRFS11N50ATRLP 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A TO263AB
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIUD402ED-T1-GE3 SIUD402ED-T1-GE3 siud402ed.pdf Vishay Siliconix Description: MOSFET N-CH 20V 1A PPAK 0806
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 730mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 0806
Package / Case: PowerPAK® 0806
Base Part Number: SIUD402
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ469EP-T1_GE3 SQJ469EP-T1_GE3 sqj469ep.pdf Vishay Siliconix Description: MOSFET P-CH 80V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Base Part Number: SQJ469
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
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Lieferzeit 21-28 Tag (e)
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SQJ410EP-T1_GE3 sqj410ep.pdf Vishay Siliconix Description: MOSFET N-CH 30V 32A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 32A POWERPAKSO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
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Lieferzeit 21-28 Tag (e)
SIJ494DP-T1-GE3 SIJ494DP-T1-GE3 sij494dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
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Lieferzeit 21-28 Tag (e)
SIA485DJ-T1-GE3 SIA485DJ-T1-GE3 sia485dj.pdf Vishay Siliconix Description: MOSFET P-CH 150V 1.6A PPAK SC70
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 75V
Power Dissipation (Max): 15.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA485
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Lieferzeit 21-28 Tag (e)
SISS67DN-T1-GE3 SISS67DN-T1-GE3 siss67dn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
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Lieferzeit 21-28 Tag (e)
auf Bestellung 8630 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
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Lieferzeit 21-28 Tag (e)
auf Bestellung 8630 Stücke - Preis und Lieferfrist anzeigen
SIP12108ADMP-T1GE4 SIP12108ADMP-T1GE4 sip12108.pdf Vishay Siliconix Description: IC REG BUCK ADJUSTABLE 5A 16MLP
Base Part Number: SIP121
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 200kHz ~ 4MHz
Current - Output: 5A
Voltage - Output (Max): 4.68V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 2.8V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR872DP-T1-GE3 SIR872DP-T1-GE3 sir872dp.pdf Vishay Siliconix Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR872
auf Bestellung 5455 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 sq4850ey.pdf Vishay Siliconix Description: MOSFET N-CH 60V 12A 8SO
Base Part Number: SQ4850
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4557 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800700 Stücke - Preis und Lieferfrist anzeigen
SQM50P06-15L_GE3 SQM50P06-15L_GE3 sqm50p06.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
auf Bestellung 1854 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
SIHH120N60E-T1-GE3 SIHH120N60E-T1-GE3 sihh120n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2329 Stücke - Preis und Lieferfrist anzeigen
SIHG105N60EF-GE3 SIHG105N60EF-GE3 sihg105n60ef.pdf Vishay Siliconix Description: MOSFET EF SERIES TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: SIHG105
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1021 Stücke - Preis und Lieferfrist anzeigen
SIA436DJ-T1-GE3 SIA436DJ-T1-GE3 sia436dj.pdf Vishay Siliconix Description: MOSFET N-CH 8V 12A PPAK SC70-6
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SIA436
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
auf Bestellung 27000 Stücke
Lieferzeit 21-28 Tag (e)
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DG508BEN-T1-GE4 DG508BEN-T1-GE4 dg508b.pdf Vishay Siliconix Description: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12374 Stücke - Preis und Lieferfrist anzeigen
SI7113ADN-T1-GE3 SI7113ADN-T1-GE3 si7113adn.pdf Vishay Siliconix Description: MOSFET P-CH 100V 10.8A PPAK
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7113
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8940 Stücke - Preis und Lieferfrist anzeigen
DG418BDQ-T1-E3 DG418BDQ-T1-E3 dg417b.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPST 8MSOP
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
auf Bestellung 2370 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12500 Stücke - Preis und Lieferfrist anzeigen
DG418BDY-T1-E3 DG418BDY-T1-E3 dg417b.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPST 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
DG418DY-T1-E3 DG418DY-T1-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG418LEDQ-T1-GE3 DG418LEDQ-T1-GE3 dg417le.pdf Vishay Siliconix Description: IC ANALOG SWITCH 8MSOP
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2146 Stücke
Lieferzeit 21-28 Tag (e)
DG418LEDY-T1-GE4 DG418LEDY-T1-GE4 dg417le.pdf Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
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Lieferzeit 21-28 Tag (e)
DG418LEDQ-T1-GE3 DG418LEDQ-T1-GE3 dg417le.pdf Vishay Siliconix Description: IC ANALOG SWITCH 8MSOP
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG418LDQ-T1-E3 DG418LDQ-T1-E3 dg417l.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8MSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 20Ohm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -71dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP
Base Part Number: DG418
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB68EP-T1_GE3 SQJB68EP-T1_GE3 sqjb68ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SQJB68
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Lieferzeit 21-28 Tag (e)
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SIRA88DP-T1-GE3 SIRA88DP-T1-GE3 sira88dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
auf Bestellung 2203 Stücke
Lieferzeit 21-28 Tag (e)
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SIHP21N80AE-GE3 SIHP21N80AE-GE3 sihp21n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 17.4A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Base Part Number: SIHP21
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
SIHG21N80AE-GE3 SIHG21N80AE-GE3 sihg21n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 17.4A TO247AC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHG21
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
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Lieferzeit 21-28 Tag (e)
SIHW21N80AE-GE3 sihw21n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 17.4A TO247AD
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Power Dissipation (Max): 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Manufacturer: Vishay Siliconix
Base Part Number: SIHW21
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Lieferzeit 21-28 Tag (e)
SI7172ADP-T1-RE3 SI7172ADP-T1-RE3 si7172adp.pdf Vishay Siliconix Description: MOSFET N-CH 200V PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11702 Stücke - Preis und Lieferfrist anzeigen
SQM60N06-15_GE3 SQM60N06-15_GE3 sqm60n06.pdf Vishay Siliconix Description: MOSFET N-CH 60V 56A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 68 Stücke - Preis und Lieferfrist anzeigen
DG612EEN-T1-GE4 DG612EEN-T1-GE4 dg611e.pdf Vishay Siliconix Description: IC AMP/VIDEO/MUX LP 16QFN
Part Status: Active
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Packaging: Tape & Reel (TR)
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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Lieferzeit 21-28 Tag (e)
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3000+ 1.9 EUR
Vishay Siliconix Description: IC AMP/VIDEO/MUX LP 16QFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
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Lieferzeit 21-28 Tag (e)
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7+ 4.03 EUR
10+ 3.6 EUR
25+ 3.42 EUR
100+ 2.81 EUR
250+ 2.62 EUR
500+ 2.32 EUR
1000+ 1.9 EUR
SQ1912AEEH-T1_GE3 SQ1912AEEH-T1_GE3 sq1912aeeh.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5820 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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SQ1912EH-T1_GE3 SQ1912EH-T1_GE3 sq1912eh.pdf Vishay Siliconix Description: MOSFET 2 N-CH 20V 800MA SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET 2 N-CH 20V 800MA SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
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Lieferzeit 21-28 Tag (e)
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
SIHB21N65EF-GE3 SIHB21N65EF-GE3 sihb21n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 21A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: SIHB21
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 693 Stücke
Lieferzeit 21-28 Tag (e)
SI7450DP-T1-E3 SI7450DP-T1-E3 si7450dp.pdf Vishay Siliconix Description: MOSFET N-CH 200V 3.2A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7450
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
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SQS420EN-T1_GE3 SQS420EN-T1_GE3 sqs420en.pdf Vishay Siliconix Description: MOSFET N-CH 20V 8A PPAK1212-8
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS420
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 18W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
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Lieferzeit 21-28 Tag (e)
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DG636EEN-T1-GE4 DG636EEN-T1-GE4 dg636e.pdf Vishay Siliconix Description: IC ANALOG SWITCH 16MINIQFN
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC ANALOG SWITCH 16MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
DG636EEQ-T1-GE4 DG636EEQ-T1-GE4 dg636e.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 14TSSOP
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -62dB @ 10MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Charge Injection: -0.33pC
-3db Bandwidth: 700MHz
Switch Time (Ton, Toff) (Max): 56ns, 61ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 96Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P10-43L-E3 SUD50P10-43L-E3 sud50p10.pdf Vishay Siliconix Description: MOSFET P-CH 100V 37.1A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: TO-252, (D-Pak)
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Lieferzeit 21-28 Tag (e)
SUM90330E-GE3 SUM90330E-GE3 sum90330e.pdf Vishay Siliconix Description: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Lieferzeit 21-28 Tag (e)
SIHFR430ATRR-GE3 SIHFR430ATRR-GE3 sihfr430.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5A DPAK
Base Part Number: SIHFR430
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFR430ATRL-GE3 SIHFR430ATRL-GE3 sihfr430.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5A DPAK
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SIHFR430
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFR430ATR-GE3 SIHFR430ATR-GE3 sihfr430.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5A DPAK
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHFR430
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG1413EEN-T1-GE4 DG1413EEN-T1-GE4 dg1411e.pdf Vishay Siliconix Description: IC SWITCH SPST QUAD 16QFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB120N60E-GE3 SIHB120N60E-GE3 sihb120n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 25A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.73 EUR
SI7155DP-T1-GE3 SI7155DP-T1-GE3 si7155dp.pdf Vishay Siliconix Description: MOSFET P-CH 40V 31A/100A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50N04-5M6_T4GE3 sqd50n04-5m6.pdf
SQD50N04-5M6_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2468 Stücke - Preis und Lieferfrist anzeigen
SQD50N04-5M6_T4GE3 sqd50n04-5m6.pdf
SQD50N04-5M6_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
auf Bestellung 2468 Stücke
Lieferzeit 21-28 Tag (e)
SI2333DS-T1-E3 72023.pdf
SI2333DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2333
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
auf Bestellung 95075 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 950 Stücke - Preis und Lieferfrist anzeigen
SIR606DP-T1-GE3 sir606dp.pdf
SIR606DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
auf Bestellung 4780 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIR606DP-T1-GE3 sir606dp.pdf
SIR606DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 37A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 6V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 50V
Power Dissipation (Max): 44.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR606
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4780 Stücke - Preis und Lieferfrist anzeigen
SIZ346DT-T1-GE3 siz346dt.pdf
SIZ346DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11119 Stücke - Preis und Lieferfrist anzeigen
SIZ346DT-T1-GE3 siz346dt.pdf
SIZ346DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 17/30A 8POWER33
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 16W, 16.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
auf Bestellung 5169 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8950 Stücke - Preis und Lieferfrist anzeigen
SI4559ADY-T1-E3 si4559ad.pdf
SI4559ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 132623 Stücke - Preis und Lieferfrist anzeigen
SI4559ADY-T1-E3 si4559ad.pdf
SI4559ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Part Status: Active
FET Type: N and P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4559
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 32623 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100000 Stücke - Preis und Lieferfrist anzeigen
DG411DQ-T1-E3 dg411.pdf
DG411DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-TSSOP
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -85dB @ 1MHz
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
Supplier Device Package: 16-TSSOP
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4559ADY-T1-E3 si4559ad.pdf
SI4559ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.4W
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 132623 Stücke - Preis und Lieferfrist anzeigen
SI4963BDY-T1-E3 72753.pdf
SI4963BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.9A
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4963
auf Bestellung 20349 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 98859 Stücke - Preis und Lieferfrist anzeigen
SIHB16N50C-E3 sihp16n5.pdf
SIHB16N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A D2PAK
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHB16
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
auf Bestellung 998 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 990 Stücke - Preis und Lieferfrist anzeigen
SQS405ENW-T1_GE3 sqs405en.pdf
SQS405ENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A POWERPAK1212
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
auf Bestellung 1977 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1977 Stücke - Preis und Lieferfrist anzeigen
SQS405EN-T1_GE3 sqs405en.pdf
SQS405EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 16A PPAK1212-8
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 13.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQS405
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 8V
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25990 Stücke - Preis und Lieferfrist anzeigen
SI4136DY-T1-GE3 si4136dy.pdf
SI4136DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 46A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Base Part Number: SI4136
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 9105 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6294 Stücke - Preis und Lieferfrist anzeigen
SI4164DY-T1-GE3 si4164dy.pdf
SI4164DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3545pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 11522 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1709 Stücke - Preis und Lieferfrist anzeigen
SIHH27N60EF-T1-GE3 sihh27n60ef.pdf
SIHH27N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A PPAK 8 X 8
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2609 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2715 Stücke - Preis und Lieferfrist anzeigen
SIHB065N60E-GE3 sihb065n60e.pdf
SIHB065N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2034EDN-T1-GE4 dg2034e.pdf
DG2034EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T SINGLE 12QFN
Packaging: Tape & Reel (TR)
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -71dB @ 1MHz
Charge Injection: -2.6pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
auf Bestellung 4490 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4563 Stücke - Preis und Lieferfrist anzeigen
2500+ 1.97 EUR
SIZ926DT-T1-GE3 siz926dt.pdf
SIZ926DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 25V 8-POWERPAIR
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1328 Stücke - Preis und Lieferfrist anzeigen
SIZ926DT-T1-GE3 siz926dt.pdf
SIZ926DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 25V 8-POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 41nC @ 10V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V, 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1328 Stücke
Lieferzeit 21-28 Tag (e)
DG2034EDN-T1-GE4 dg2034e.pdf
DG2034EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T SINGLE 12QFN
Current - Leakage (IS(off)) (Max): 2nA
Channel Capacitance (CS(off), CD(off)): 7pF, -
Switch Time (Ton, Toff) (Max): 25ns, 20ns
Channel-to-Channel Matching (ΔRon): 20mOhm
Multiplexer/Demultiplexer Circuit: 4:1
Charge Injection: -2.6pC
Crosstalk: -71dB @ 1MHz
Switch Circuit: SP4T
Number of Circuits: 1
Part Status: Active
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 12-QFN (3x3)
-3db Bandwidth: 166MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 4563 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4490 Stücke - Preis und Lieferfrist anzeigen
7+ 3.72 EUR
10+ 3.35 EUR
25+ 3.17 EUR
100+ 2.7 EUR
250+ 2.53 EUR
500+ 2.22 EUR
1000+ 1.97 EUR
SISS66DN-T1-GE3 siss66dn.pdf
SISS66DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 6695 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SISS66DN-T1-GE3 siss66dn.pdf
SISS66DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3327pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SISS66
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8S
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6695 Stücke - Preis und Lieferfrist anzeigen
SIRC10DP-T1-GE3 sirc10dp.pdf
SIRC10DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8382 Stücke - Preis und Lieferfrist anzeigen
SIRC10DP-T1-GE3 sirc10dp.pdf
SIRC10DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1873 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 43W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 4397 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3985 Stücke - Preis und Lieferfrist anzeigen
SISS22DN-T1-GE3 siss22dn.pdf
SISS22DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A/90.6A PPAK
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 90.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Base Part Number: SISS22
Package / Case: PowerPAK® 1212-8S
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
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SQJ407EP-T1_GE3 sqj407ep.pdf
SQJ407EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7255 Stücke - Preis und Lieferfrist anzeigen
SQJ407EP-T1_GE3 sqj407ep.pdf
SQJ407EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 10700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Base Part Number: SQJ407
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 68W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3192 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7063 Stücke - Preis und Lieferfrist anzeigen
IRF840AL sihf840.pdf
IRF840AL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4491EDY-T1-GE3 si4491edy.pdf
SI4491EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 17.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 6.9W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2315 Stücke
Lieferzeit 21-28 Tag (e)
SI9407BDY-T1-E3 si9407bd.pdf
SI9407BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 4.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 70000 Stücke - Preis und Lieferfrist anzeigen
SIHP100N60E-GE3 sihp100n60e.pdf
SIHP100N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 979 Stücke
Lieferzeit 21-28 Tag (e)
SQP90142E_GE3 sqp90142e.pdf
SQP90142E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 78.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90142E-GE3 sum90142e.pdf
SUM90142E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO263
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3120pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
Part Status: Active
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
auf Bestellung 795 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 495 Stücke - Preis und Lieferfrist anzeigen
SUP90142E-GE3 sup90142e.pdf
SUP90142E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 90A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 15.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 31200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFS11N50ATRRP 91286.pdf
IRFS11N50ATRRP
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 592 Stücke - Preis und Lieferfrist anzeigen
IRFS11N50ATRLP 91286.pdf
IRFS11N50ATRLP
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO263AB
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 816 Stücke - Preis und Lieferfrist anzeigen
SIUD402ED-T1-GE3 siud402ed.pdf
SIUD402ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1A PPAK 0806
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 730mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 8V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 10V
Power Dissipation (Max): 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 0806
Package / Case: PowerPAK® 0806
Base Part Number: SIUD402
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ469EP-T1_GE3 sqj469ep.pdf
SQJ469EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Base Part Number: SQJ469
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 100W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
auf Bestellung 7882 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2188 Stücke - Preis und Lieferfrist anzeigen
SQJ410EP-T1_GE3 sqj410ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 32A POWERPAKSO-8
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2785 Stücke - Preis und Lieferfrist anzeigen
SQJ410EP-T1_GE3 sqj410ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 32A POWERPAKSO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 10.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
auf Bestellung 2785 Stücke
Lieferzeit 21-28 Tag (e)
SIJ494DP-T1-GE3 sij494dp.pdf
SIJ494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1572 Stücke - Preis und Lieferfrist anzeigen
SIJ494DP-T1-GE3 sij494dp.pdf
SIJ494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 36.8A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1070pF @ 75V
Power Dissipation (Max): 69.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJ494
auf Bestellung 1572 Stücke
Lieferzeit 21-28 Tag (e)
SIA485DJ-T1-GE3 sia485dj.pdf
SIA485DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.6A PPAK SC70
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 75V
Power Dissipation (Max): 15.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA485
auf Bestellung 2965 Stücke
Lieferzeit 21-28 Tag (e)
SISS67DN-T1-GE3 siss67dn.pdf
SISS67DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12324 Stücke - Preis und Lieferfrist anzeigen
SISS67DN-T1-GE3 siss67dn.pdf
SISS67DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8S
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4380pF @ 15V
Power Dissipation (Max): 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS67
auf Bestellung 3694 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11630 Stücke - Preis und Lieferfrist anzeigen
SIP12108ADMP-T1GE4 sip12108.pdf
SIP12108ADMP-T1GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 5A 16MLP
Base Part Number: SIP121
Supplier Device Package: 16-MLP (3x3)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Synchronous Rectifier: Yes
Frequency - Switching: 200kHz ~ 4MHz
Current - Output: 5A
Voltage - Output (Max): 4.68V
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Max): 5.5V
Voltage - Input (Min): 2.8V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR872DP-T1-GE3 sir872dp.pdf
SIR872DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 53.7A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 75V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR872
auf Bestellung 5455 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQ4850EY-T1_GE3 sq4850ey.pdf
SQ4850EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A 8SO
Base Part Number: SQ4850
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 6.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4557 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800700 Stücke - Preis und Lieferfrist anzeigen
SQM50P06-15L_GE3 sqm50p06.pdf
SQM50P06-15L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
auf Bestellung 1854 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1600 Stücke - Preis und Lieferfrist anzeigen
SQM50P06-15L_GE3 sqm50p06.pdf
SQM50P06-15L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V 50A TO263
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM50P
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1854 Stücke - Preis und Lieferfrist anzeigen
SIHH120N60E-T1-GE3 sihh120n60e.pdf
SIHH120N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 24A PPAK 8 X 8
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2329 Stücke - Preis und Lieferfrist anzeigen
SIHG105N60EF-GE3 sihg105n60ef.pdf
SIHG105N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET EF SERIES TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Base Part Number: SIHG105
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1804pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 102mOhm @ 13A, 10V
auf Bestellung 500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1021 Stücke - Preis und Lieferfrist anzeigen
SIA436DJ-T1-GE3 sia436dj.pdf
SIA436DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Part Status: Active
Manufacturer: Vishay Siliconix
Base Part Number: SIA436
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1508pF @ 4V
Vgs (Max): ±5V
Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 8V
auf Bestellung 27000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 37344 Stücke - Preis und Lieferfrist anzeigen
DG508BEN-T1-GE4 dg508b.pdf
DG508BEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX ANALOG SINGLE 8CH 16QFN
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -88dB @ 1MHz
Charge Injection: 2pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 380Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12374 Stücke - Preis und Lieferfrist anzeigen
SI7113ADN-T1-GE3 si7113adn.pdf
SI7113ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 10.8A PPAK
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7113
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 515pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 132mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8940 Stücke - Preis und Lieferfrist anzeigen
DG418BDQ-T1-E3 dg417b.pdf
DG418BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8MSOP
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
auf Bestellung 2370 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12500 Stücke - Preis und Lieferfrist anzeigen
DG418BDY-T1-E3 dg417b.pdf
DG418BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8SOIC
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 38pC
Switch Time (Ton, Toff) (Max): 89ns, 80ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 25Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2358 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
DG418DY-T1-E3 dg417.pdf
DG418DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG418LEDQ-T1-GE3 dg417le.pdf
DG418LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
Manufacturer: Vishay Siliconix
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2146 Stücke
Lieferzeit 21-28 Tag (e)
DG418LEDY-T1-GE4 dg417le.pdf
DG418LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 9Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
auf Bestellung 60 Stücke
Lieferzeit 21-28 Tag (e)
DG418LEDQ-T1-GE3 dg417le.pdf
DG418LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
Base Part Number: DG418
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Crosstalk: -72dB @ 1MHz
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 11pF, 32pF
Charge Injection: 26pC
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 9Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2146 Stücke - Preis und Lieferfrist anzeigen
DG418LDQ-T1-E3 dg417l.pdf
DG418LDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8MSOP
Packaging: Cut Tape (CT)
Part Status: Obsolete
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 20Ohm
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Switch Time (Ton, Toff) (Max): 43ns, 31ns
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -71dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP
Base Part Number: DG418
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB68EP-T1_GE3 sqjb68ep.pdf
SQJB68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Manufacturer: Vishay Siliconix
Base Part Number: SQJB68
auf Bestellung 265 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 411 Stücke - Preis und Lieferfrist anzeigen
SIRA88DP-T1-GE3 sira88dp.pdf
SIRA88DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4406 Stücke - Preis und Lieferfrist anzeigen
SIRA88DP-T1-GE3 sira88dp.pdf
SIRA88DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Power Dissipation (Max): 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA88
auf Bestellung 2203 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
SIHP21N80AE-GE3 sihp21n80ae.pdf
SIHP21N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Base Part Number: SIHP21
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 998 Stücke
Lieferzeit 21-28 Tag (e)
SIHG21N80AE-GE3 sihg21n80ae.pdf
SIHG21N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AC
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHG21
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
auf Bestellung 550 Stücke
Lieferzeit 21-28 Tag (e)
SIHW21N80AE-GE3 sihw21n80ae.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A TO247AD
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Power Dissipation (Max): 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Manufacturer: Vishay Siliconix
Base Part Number: SIHW21
auf Bestellung 526 Stücke
Lieferzeit 21-28 Tag (e)
SI7172ADP-T1-RE3 si7172adp.pdf
SI7172ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11702 Stücke - Preis und Lieferfrist anzeigen
SQM60N06-15_GE3 sqm60n06.pdf
SQM60N06-15_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 56A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 68 Stücke - Preis und Lieferfrist anzeigen
DG612EEN-T1-GE4 dg611e.pdf
DG612EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC AMP/VIDEO/MUX LP 16QFN
Part Status: Active
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Packaging: Tape & Reel (TR)
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8051 Stücke - Preis und Lieferfrist anzeigen
3000+ 1.9 EUR
DG612EEN-T1-GE4 dg611e.pdf
DG612EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC AMP/VIDEO/MUX LP 16QFN
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 100pA
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Switch Time (Ton, Toff) (Max): 50ns, 35ns
Channel-to-Channel Matching (ΔRon): 600mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -74dB @ 10MHz
Charge Injection: 1.4pC
Voltage - Supply, Dual (V±): ±3V ~ 5V
Voltage - Supply, Single (V+): 3V ~ 12V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 115Ohm
auf Bestellung 6176 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4875 Stücke - Preis und Lieferfrist anzeigen
7+ 4.03 EUR
10+ 3.6 EUR
25+ 3.42 EUR
100+ 2.81 EUR
250+ 2.62 EUR
500+ 2.32 EUR
1000+ 1.9 EUR
SQ1912AEEH-T1_GE3 sq1912aeeh.pdf
SQ1912AEEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11450 Stücke - Preis und Lieferfrist anzeigen
SQ1912AEEH-T1_GE3 sq1912aeeh.pdf
SQ1912AEEH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V POWERPAK SC70-6
Base Part Number: SQ1912
Manufacturer: Vishay Siliconix
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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SQ1912EH-T1_GE3 sq1912eh.pdf
SQ1912EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 20V 800MA SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3501 Stücke - Preis und Lieferfrist anzeigen
SQ1912EH-T1_GE3 sq1912eh.pdf
SQ1912EH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 20V 800MA SC70-6
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Manufacturer: Vishay Siliconix
Base Part Number: SQ1912
auf Bestellung 1510 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1991 Stücke - Preis und Lieferfrist anzeigen
SIHB21N65EF-GE3 sihb21n65ef.pdf
SIHB21N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 21A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: SIHB21
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 693 Stücke
Lieferzeit 21-28 Tag (e)
SI7450DP-T1-E3 si7450dp.pdf
SI7450DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7450
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
auf Bestellung 4748 Stücke
Lieferzeit 21-28 Tag (e)
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SQS420EN-T1_GE3 sqs420en.pdf
SQS420EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A PPAK1212-8
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS420
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 18W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
auf Bestellung 3055 Stücke
Lieferzeit 21-28 Tag (e)
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DG636EEN-T1-GE4 dg636e.pdf
DG636EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2405 Stücke - Preis und Lieferfrist anzeigen
DG636EEN-T1-GE4 dg636e.pdf
DG636EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 16MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Switch Time (Ton, Toff) (Max): 46ns, 55ns
Channel-to-Channel Matching (ΔRon): 300mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -0.33pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 96Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
auf Bestellung 2405 Stücke
Lieferzeit 21-28 Tag (e)
DG636EEQ-T1-GE4 dg636e.pdf
DG636EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 14TSSOP
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -62dB @ 10MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 3.7pF, 4.4pF
Charge Injection: -0.33pC
-3db Bandwidth: 700MHz
Switch Time (Ton, Toff) (Max): 56ns, 61ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 96Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P10-43L-E3 sud50p10.pdf
SUD50P10-43L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: TO-252, (D-Pak)
auf Bestellung 3107 Stücke
Lieferzeit 21-28 Tag (e)
SUM90330E-GE3 sum90330e.pdf
SUM90330E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 261 Stücke - Preis und Lieferfrist anzeigen
SUM90330E-GE3 sum90330e.pdf
SUM90330E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.1A D2PAK
Packaging: Cut Tape (CT)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1172pF @ 100V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 261 Stücke
Lieferzeit 21-28 Tag (e)
SIHFR430ATRR-GE3 sihfr430.pdf
SIHFR430ATRR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Base Part Number: SIHFR430
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFR430ATRL-GE3 sihfr430.pdf
SIHFR430ATRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SIHFR430
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFR430ATR-GE3 sihfr430.pdf
SIHFR430ATR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHFR430
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG1413EEN-T1-GE4 dg1411e.pdf
DG1413EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST QUAD 16QFN
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB120N60E-GE3 sihb120n60e.pdf
SIHB120N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.73 EUR
SI7155DP-T1-GE3 si7155dp.pdf
SI7155DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 31A/100A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12900pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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