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SI4850EY-T1-E3 SI4850EY-T1-E3 71146.pdf Vishay Siliconix Description: MOSFET N-CH 60V 6A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.7W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4850
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28975 Stücke - Preis und Lieferfrist anzeigen
SQR50N04-3M8_GE3 sqr50n04-3m8.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A DPAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQR50
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: D-PAK (TO-252)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 40V 50A DPAK
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: D-PAK (TO-252)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQR50
Manufacturer: Vishay Siliconix
auf Bestellung 1974 Stücke
Lieferzeit 21-28 Tag (e)
SIHA17N80E-E3 SIHA17N80E-E3 siha17n80e.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 800V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.35 EUR
SIHG17N80E-GE3 SIHG17N80E-GE3 sihg17n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 15A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP17N80E-GE3 SIHP17N80E-GE3 sihp17n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 15A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SIHA17N80AEF-GE3 SIHA17N80AEF-GE3 Vishay Siliconix Description: EF SERIES POWER MOSFET WITH FAST
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4900DY-T1-GE3 SI4900DY-T1-GE3 si4900dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Packaging: Cut Tape (CT)
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auf Bestellung 181 Stücke - Preis und Lieferfrist anzeigen
SIR668ADP-T1-RE3 SIR668ADP-T1-RE3 sir668adp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 93.6A PPAK SO-8
Base Part Number: SIR668
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16167 Stücke - Preis und Lieferfrist anzeigen
SI4554DY-T1-GE3 SI4554DY-T1-GE3 si4554dy.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 8A 8SO
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB11N80E-GE3 SIHB11N80E-GE3 sihb11n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP23N60E-GE3 SIHP23N60E-GE3 sihp23n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 23A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
SIHB23N60E-GE3 SIHB23N60E-GE3 sihb23n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 23A D2PAK
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
3+ 9.96 EUR
10+ 8.96 EUR
SIHG23N60E-GE3 SIHG23N60E-GE3 sihg23n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 23A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ422EP-T1_GE3 SQJ422EP-T1_GE3 sqj422ep.pdf Vishay Siliconix Description: MOSFET N-CH 40V 74A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Base Part Number: SQJ422
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 236 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4673 Stücke - Preis und Lieferfrist anzeigen
SQM120N06-3M5L_GE3 SQM120N06-3M5L_GE3 sqm120n06-3m5l.pdf Vishay Siliconix Description: MOSFET N-CH 60V 120A TO263
Base Part Number: SQM120
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5149 Stücke - Preis und Lieferfrist anzeigen
SQ2348ES-T1_GE3 SQ2348ES-T1_GE3 sq2348es.pdf Vishay Siliconix Description: MOSFET N-CH 30V 8A TO236
Base Part Number: SQ2348
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 7555 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SQS484EN-T1_GE3 SQS484EN-T1_GE3 sqs484en.pdf Vishay Siliconix Description: MOSFET N-CH 40V 16A PPAK1212-8
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQA410EJ-T1_GE3 SQA410EJ-T1_GE3 sqa410ej.pdf Vishay Siliconix Description: MOSFET N-CH 20V 7.8A SC70-6
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
auf Bestellung 1415 Stücke
Lieferzeit 21-28 Tag (e)
SQS462EN-T1_GE3 SQS462EN-T1_GE3 sqs462en.pdf Vishay Siliconix Description: MOSFET N-CH 60V 8A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2741 Stücke
Lieferzeit 21-28 Tag (e)
DG4052EEN-T1-GE4 DG4052EEN-T1-GE4 dg4051e.pdf Vishay Siliconix Description: IC MUX DUAL 4CHAN 16-MINIQFN
On-State Resistance (Max): 78Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG4052
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -105dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Charge Injection: 0.3pC
-3db Bandwidth: 353MHz
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 910mOhm
auf Bestellung 34814 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
DG4051EEN-T1-GE4 DG4051EEN-T1-GE4 dg4051e.pdf Vishay Siliconix Description: IC MUX SINGLE 8CHAN 16-MINIQFN
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Charge Injection: 0.3pC
-3db Bandwidth: 308MHz
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 910mOhm
On-State Resistance (Max): 78Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Base Part Number: DG4051
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Crosstalk: -105dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
auf Bestellung 1650 Stücke
Lieferzeit 21-28 Tag (e)
SI7460DP-T1-GE3 SI7460DP-T1-GE3 si7460dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 11A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 55356 Stücke - Preis und Lieferfrist anzeigen
SQD50P08-25L_GE3 SQD50P08-25L_GE3 sqd50p08.pdf Vishay Siliconix Description: MOSFET P-CH 80V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P08-28_GE3 SQD50P08-28_GE3 sqd50p08.pdf Vishay Siliconix Description: MOSFET P-CH 80V 48A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM50P08-25L_GE3 SQM50P08-25L_GE3 sqm50p08.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 80V 50A TO263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3481 Stücke - Preis und Lieferfrist anzeigen
SIHH068N60E-T1-GE3 SIHH068N60E-T1-GE3 sihh068n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 34A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5078 Stücke - Preis und Lieferfrist anzeigen
SIHB35N60EF-GE3 SIHB35N60EF-GE3 sihb35n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 32A D2PAK
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
SIHG35N60EF-GE3 SIHG35N60EF-GE3 sihg35n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 32A TO247AC
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1029X-T1-GE3 SI1029X-T1-GE3 71435.pdf Vishay Siliconix Description: MOSFET N/P-CH 60V SC89-6
Base Part Number: SI1029
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 73537 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 99896 Stücke - Preis und Lieferfrist anzeigen
DG403BDY-T1-E3 DG403BDY-T1-E3 73069.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT 16SOIC
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Crosstalk: -94.8dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2250 Stücke - Preis und Lieferfrist anzeigen
SI4800BDY-T1-GE3 SI4800BDY-T1-GE3 si4800bd.pdf Vishay Siliconix Description: MOSFET N-CH 30V 6.5A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 1.3W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 2031 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1647 Stücke - Preis und Lieferfrist anzeigen
IRFZ24STRLPBF IRFZ24STRLPBF sihfz24.pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A D2PAK
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF840STRLPBF IRF840STRLPBF sihf840s.pdf Vishay Siliconix Description: MOSFET N-CH 500V 8A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Part Status: Active
Vgs (Max): ±20V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 208 Stücke
Lieferzeit 21-28 Tag (e)
SQ2315ES-T1_GE3 SQ2315ES-T1_GE3 sq2315es.pdf Vishay Siliconix Description: MOSFET P-CH 12V 5A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2315
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 318 Stücke - Preis und Lieferfrist anzeigen
IRL620STRLPBF IRL620STRLPBF 91302.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 575 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 797 Stücke - Preis und Lieferfrist anzeigen
5+ 5.28 EUR
10+ 4.74 EUR
100+ 3.81 EUR
SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 sq2362es.pdf Vishay Siliconix Description: MOSFET N-CH 60V 4.3A SOT23-3
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 14 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47031 Stücke - Preis und Lieferfrist anzeigen
SQ2361AEES-T1_GE3 SQ2361AEES-T1_GE3 sq2361aees.pdf Vishay Siliconix Description: MOSFET P-CH 60V 2.8A SSOT23
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11765 Stücke - Preis und Lieferfrist anzeigen
SQ2389ES-T1_GE3 SQ2389ES-T1_GE3 sq2389es.pdf Vishay Siliconix Description: MOSFET P-CH 40V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24321 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 40V 4.1A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24321 Stücke - Preis und Lieferfrist anzeigen
SQ3427AEEV-T1_GE3 SQ3427AEEV-T1_GE3 sq3427aeev.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.3A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
Power Dissipation (Max): 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SQ3427
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12854 Stücke - Preis und Lieferfrist anzeigen
SQD50P06-15L_GE3 SQD50P06-15L_GE3 sqd50p06.pdf Vishay Siliconix Description: MOSFET P-CH 60V 50A TO252
Manufacturer: Vishay Siliconix
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4667 Stücke - Preis und Lieferfrist anzeigen
SI3127DV-T1-GE3 SI3127DV-T1-GE3 si3127dv.pdf Vishay Siliconix Description: MOSFET P-CH 60V 3.5A/13A 6TSOP
Base Part Number: SI3127
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 833pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC437AED-T1-GE3 SIC437AED-T1-GE3 sic437.pdf Vishay Siliconix Description: IC REG BUCK ADJ 12A MLP44-24
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC REG BUCK ADJ 12A MLP44-24
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
auf Bestellung 1880 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.99 EUR
10+ 6.26 EUR
25+ 5.92 EUR
100+ 5.13 EUR
250+ 4.87 EUR
500+ 4.37 EUR
1000+ 4.1 EUR
SIC438BED-T1-GE3 SIC438BED-T1-GE3 sic437.pdf Vishay Siliconix Description: IC REG BUCK ADJUSTABLE 8A
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Packaging: Tape & Reel (TR)
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 3.68 EUR
Vishay Siliconix Description: IC REG BUCK ADJUSTABLE 8A
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
auf Bestellung 8750 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.99 EUR
10+ 6.27 EUR
25+ 5.91 EUR
100+ 5.04 EUR
250+ 4.73 EUR
500+ 4.14 EUR
1000+ 3.68 EUR
SIC431AED-T1-GE3 SIC431AED-T1-GE3 sic431.pdf Vishay Siliconix Description: IC REG BUCK ADJ 24A MLP44-24
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC461EVB SIC461EVB sic46x.pdf Vishay Siliconix Description: REF BRD MICROBUCK SIC461
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Current - Output: 10A
Voltage - Input: 4.5V ~ 60V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC461
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Lieferzeit 21-28 Tag (e)
SIC462EVB SIC462EVB sic46x.pdf Vishay Siliconix Description: REF BRD MICROBUCK SIC462
Utilized IC / Part: SIC462
Supplied Contents: Board(s)
Board Type: Fully Populated
Regulator Topology: Buck
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SIC463EVB SIC463EVB sic46x.pdf Vishay Siliconix Description: REF BRD MICROBUCK SIC463
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC463
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SIC464EVB SIC464EVB sic46x.pdf Vishay Siliconix Description: REF BRD MICROBUCK SIC464
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC464
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
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Lieferzeit 21-28 Tag (e)
1+ 261.48 EUR
SIC462ED-T1-GE3 SIC462ED-T1-GE3 sic46x.pdf Vishay Siliconix Description: IC REG BUCK ADJ 6A MLP55-27
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 60V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 55.2V
Current - Output: 6A
Frequency - Switching: 100kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC462
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC463ED-T1-GE3 SIC463ED-T1-GE3 sic46x.pdf Vishay Siliconix Description: IC REG BUCK ADJ 4A SYNC MLP27-55
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 60V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 55.2V
Current - Output: 4A
Frequency - Switching: 100kHz ~ 2MHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC464ED-T1-GE3 SIC464ED-T1-GE3 sic46x.pdf Vishay Siliconix Description: IC REG BUCK ADJ 2A MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 55.2V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: IC REG BUCK ADJ 2A MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 55.2V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 53 Stücke
Lieferzeit 21-28 Tag (e)
SI4864DY-T1-GE3 SI4864DY-T1-GE3 71449.pdf Vishay Siliconix Description: MOSFET N-CH 20V 17A 8SO
Base Part Number: SI4864
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2407 Stücke
Lieferzeit 21-28 Tag (e)
SIUD412ED-T1-GE3 SIUD412ED-T1-GE3 siud412ed.pdf Vishay Siliconix Description: MOSFET N-CH 12V 500MA PWRPAK0806
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 6V
Vgs (Max): ±5V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 0.71nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
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Lieferzeit 21-28 Tag (e)
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SIR692DP-T1-RE3 SIR692DP-T1-RE3 sir692dp.pdf Vishay Siliconix Description: MOSFET N-CH 250V 24.2A PPAK SO-8
Base Part Number: SIR692
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 125V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 250V 24.2A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 125V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIR692
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Manufacturer: Vishay Siliconix
auf Bestellung 2029 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8478 Stücke - Preis und Lieferfrist anzeigen
SUP50020E-GE3 SUP50020E-GE3 sup50020e.pdf Vishay Siliconix Description: MOSFET N-CH 60V 120A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUP50020
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 345 Stücke
Lieferzeit 21-28 Tag (e)
SIRA90DP-T1-RE3 SIRA90DP-T1-RE3 sira90dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 100A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 10180pF @ 15V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA90
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SUP90220E-GE3 SUP90220E-GE3 sup90220e.pdf Vishay Siliconix Description: MOSFET N-CH 200V 64A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR690DP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 200V 34.4A SO-8
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 sia421dj.pdf Vishay Siliconix Description: MOSFET P-CH 30V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA421
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
auf Bestellung 28631 Stücke
Lieferzeit 21-28 Tag (e)
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SQD45P03-12_GE3 SQD45P03-12_GE3 sqd45p03.pdf Vishay Siliconix Description: MOSFET P-CH 30V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7111EDN-T1-GE3 SI7111EDN-T1-GE3 si7111edn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 2.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7111
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
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Lieferzeit 21-28 Tag (e)
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SI1424EDH-T1-GE3 SI1424EDH-T1-GE3 si1424ed.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4A SOT-363
Base Part Number: SI1424
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
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DG417DY-T1-E3 DG417DY-T1-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPST 8SOIC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60ET1-GE3 SIHB22N60ET1-GE3 sihb22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHA22N60AEL-GE3 SIHA22N60AEL-GE3 SIHA22N60AEL.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO220
Manufacturer: Vishay Siliconix
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA22
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Lieferzeit 21-28 Tag (e)
SIHP22N60AEL-GE3 SIHP22N60AEL-GE3 SIHP22N60AEL.pdf Vishay Siliconix Description: MOSFET N-CHAN 600V
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60AEL-GE3 SIHB22N60AEL-GE3 SIHB22N60AEL.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A D2PAK
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
SIHP22N60EL-GE3 SIHP22N60EL-GE3 sihp22n60el.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA22N60EL-E3 SIHA22N60EL-E3 siha22n60el.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 600V 21A TO220
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60EL-GE3 SIHB22N60EL-GE3 sihb22n60el.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO263
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60ET5-GE3 SIHB22N60ET5-GE3 sihb22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO263
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4848ADY-T1-GE3 SI4848ADY-T1-GE3 si4848ady.pdf Vishay Siliconix Description: MOSFET N-CH 150V 5.5A 8SOIC
Base Part Number: SI4848
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 84mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 150V 5.5A 8SOIC
Manufacturer: Vishay Siliconix
Base Part Number: SI4848
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 84mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5548 Stücke
Lieferzeit 21-28 Tag (e)
SQD40131EL_GE3 SQD40131EL_GE3 sqd40131el.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A TO252AA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4864 Stücke - Preis und Lieferfrist anzeigen
SIHA11N80E-GE3 SIHA11N80E-GE3 siha11n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 12A TO220
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 454 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9 EUR
10+ 8.09 EUR
100+ 6.63 EUR
SIHG11N80E-GE3 SIHG11N80E-GE3 sihg11n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 12A TO247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP11N80E-GE3 SIHP11N80E-GE3 sihp11n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 12A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
3+ 8.97 EUR
10+ 8.06 EUR
SI7111EDN-T1-GE3 SI7111EDN-T1-GE3 si7111edn.pdf Vishay Siliconix Description: MOSFET P-CH 30V 60A PPAK1212-8
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Base Part Number: SI7111
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 2.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 52W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
Vgs (Max): ±12V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9545 Stücke - Preis und Lieferfrist anzeigen
SQM200N04-1M7L_GE3 sqm200n04-1m7l.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200A TO-263
Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQM200N
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V
Vgs (Max): ±20V
auf Bestellung 382 Stücke
Lieferzeit 21-28 Tag (e)
SIHF530STRL-GE3 SIHF530STRL-GE3 sihf530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF530
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG1412EEN-T1-GE4 DG1412EEN-T1-GE4 dg1411e.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16QFN
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8238 Stücke - Preis und Lieferfrist anzeigen
DG1412EEQ-T1-GE4 DG1412EEQ-T1-GE4 dg1411e.pdf Vishay Siliconix Description: IC SWITCH SPST QUAD 16TSSOP
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8340 Stücke - Preis und Lieferfrist anzeigen
SI4850EY-T1-E3 71146.pdf
SI4850EY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A 8SO
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.7W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Base Part Number: SI4850
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 28975 Stücke - Preis und Lieferfrist anzeigen
SQR50N04-3M8_GE3 sqr50n04-3m8.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A DPAK
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQR50
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: D-PAK (TO-252)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1974 Stücke - Preis und Lieferfrist anzeigen
SQR50N04-3M8_GE3 sqr50n04-3m8.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A DPAK
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Supplier Device Package: D-PAK (TO-252)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQR50
Manufacturer: Vishay Siliconix
auf Bestellung 1974 Stücke
Lieferzeit 21-28 Tag (e)
SIHA17N80E-E3 siha17n80e.pdf
SIHA17N80E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 800V 15A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.35 EUR
SIHG17N80E-GE3 sihg17n80e.pdf
SIHG17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP17N80E-GE3 sihp17n80e.pdf
SIHP17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA17N80AEF-GE3
SIHA17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4900DY-T1-GE3 si4900dy.pdf
SI4900DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 181 Stücke - Preis und Lieferfrist anzeigen
SIR668ADP-T1-RE3 sir668adp.pdf
SIR668ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 93.6A PPAK SO-8
Base Part Number: SIR668
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16167 Stücke - Preis und Lieferfrist anzeigen
SI4554DY-T1-GE3 si4554dy.pdf
SI4554DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 8A 8SO
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Power - Max: 3.1W, 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB11N80E-GE3 sihb11n80e.pdf
SIHB11N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP23N60E-GE3 sihp23n60e.pdf
SIHP23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A TO220AB
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
SIHB23N60E-GE3 sihb23n60e.pdf
SIHB23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A D2PAK
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
3+ 9.96 EUR
10+ 8.96 EUR
SIHG23N60E-GE3 sihg23n60e.pdf
SIHG23N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 23A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2418 pF @ 100 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ422EP-T1_GE3 sqj422ep.pdf
SQJ422EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 74A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Base Part Number: SQJ422
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 236 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4673 Stücke - Preis und Lieferfrist anzeigen
SQM120N06-3M5L_GE3 sqm120n06-3m5l.pdf
SQM120N06-3M5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Base Part Number: SQM120
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5149 Stücke - Preis und Lieferfrist anzeigen
SQ2348ES-T1_GE3 sq2348es.pdf
SQ2348ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A TO236
Base Part Number: SQ2348
Manufacturer: Vishay Siliconix
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 7555 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SQS484EN-T1_GE3 sqs484en.pdf
SQS484EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK1212-8
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1855 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQA410EJ-T1_GE3 sqa410ej.pdf
SQA410EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.8A SC70-6
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
auf Bestellung 1415 Stücke
Lieferzeit 21-28 Tag (e)
SQS462EN-T1_GE3 sqs462en.pdf
SQS462EN-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Power Dissipation (Max): 33W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
auf Bestellung 2741 Stücke
Lieferzeit 21-28 Tag (e)
DG4052EEN-T1-GE4 dg4051e.pdf
DG4052EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 4CHAN 16-MINIQFN
On-State Resistance (Max): 78Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: DG4052
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -105dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 4.8pF
Charge Injection: 0.3pC
-3db Bandwidth: 353MHz
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 910mOhm
auf Bestellung 34814 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
DG4051EEN-T1-GE4 dg4051e.pdf
DG4051EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC MUX SINGLE 8CHAN 16-MINIQFN
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Charge Injection: 0.3pC
-3db Bandwidth: 308MHz
Switch Time (Ton, Toff) (Max): 75ns, 88ns
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Channel-to-Channel Matching (ΔRon): 910mOhm
On-State Resistance (Max): 78Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 8:1
Base Part Number: DG4051
Supplier Device Package: 16-miniQFN (1.8x2.6)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Crosstalk: -105dB @ 100kHz
Current - Leakage (IS(off)) (Max): 1nA
auf Bestellung 1650 Stücke
Lieferzeit 21-28 Tag (e)
SI7460DP-T1-GE3 si7460dp.pdf
SI7460DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 55356 Stücke - Preis und Lieferfrist anzeigen
SQD50P08-25L_GE3 sqd50p08.pdf
SQD50P08-25L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 50A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P08-28_GE3 sqd50p08.pdf
SQD50P08-28_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 48A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM50P08-25L_GE3 sqm50p08.pdf
SQM50P08-25L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 80V 50A TO263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 25 mOhm @ 12.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3481 Stücke - Preis und Lieferfrist anzeigen
SIHH068N60E-T1-GE3 sihh068n60e.pdf
SIHH068N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 34A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5078 Stücke - Preis und Lieferfrist anzeigen
SIHB35N60EF-GE3 sihb35n60ef.pdf
SIHB35N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A D2PAK
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
SIHG35N60EF-GE3 sihg35n60ef.pdf
SIHG35N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 32A TO247AC
Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1029X-T1-GE3 71435.pdf
SI1029X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V SC89-6
Base Part Number: SI1029
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 73537 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 99896 Stücke - Preis und Lieferfrist anzeigen
DG403BDY-T1-E3 73069.pdf
DG403BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16SOIC
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 45Ohm
Number of Circuits: 4
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Crosstalk: -94.8dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2250 Stücke - Preis und Lieferfrist anzeigen
SI4800BDY-T1-GE3 si4800bd.pdf
SI4800BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 1.3W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 2031 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1647 Stücke - Preis und Lieferfrist anzeigen
IRFZ24STRLPBF sihfz24.pdf
IRFZ24STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF840STRLPBF sihf840s.pdf
IRF840STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Part Status: Active
Vgs (Max): ±20V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 208 Stücke
Lieferzeit 21-28 Tag (e)
SQ2315ES-T1_GE3 sq2315es.pdf
SQ2315ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2315
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 4V
Vgs (Max): ±8V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 318 Stücke - Preis und Lieferfrist anzeigen
IRL620STRLPBF 91302.pdf
IRL620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 575 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 797 Stücke - Preis und Lieferfrist anzeigen
5+ 5.28 EUR
10+ 4.74 EUR
100+ 3.81 EUR
SQ2362ES-T1_GE3 sq2362es.pdf
SQ2362ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.3A SOT23-3
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 14 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 47031 Stücke - Preis und Lieferfrist anzeigen
SQ2361AEES-T1_GE3 sq2361aees.pdf
SQ2361AEES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SSOT23
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11765 Stücke - Preis und Lieferfrist anzeigen
SQ2389ES-T1_GE3 sq2389es.pdf
SQ2389ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 24330 Stücke - Preis und Lieferfrist anzeigen
SQ2389ES-T1_GE3 sq2389es.pdf
SQ2389ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24321 Stücke - Preis und Lieferfrist anzeigen
SQ3427AEEV-T1_GE3 sq3427aeev.pdf
SQ3427AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.3A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
Power Dissipation (Max): 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SQ3427
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12854 Stücke - Preis und Lieferfrist anzeigen
SQD50P06-15L_GE3 sqd50p06.pdf
SQD50P06-15L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 50A TO252
Manufacturer: Vishay Siliconix
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4667 Stücke - Preis und Lieferfrist anzeigen
SI3127DV-T1-GE3 si3127dv.pdf
SI3127DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP
Base Part Number: SI3127
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Input Capacitance (Ciss) (Max) @ Vds: 833pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc)
Drain to Source Voltage (Vdss): 60V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC437AED-T1-GE3 sic437.pdf
SIC437AED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 12A MLP44-24
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1880 Stücke - Preis und Lieferfrist anzeigen
SIC437AED-T1-GE3 sic437.pdf
SIC437AED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 12A MLP44-24
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
auf Bestellung 1880 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.99 EUR
10+ 6.26 EUR
25+ 5.92 EUR
100+ 5.13 EUR
250+ 4.87 EUR
500+ 4.37 EUR
1000+ 4.1 EUR
SIC438BED-T1-GE3 sic437.pdf
SIC438BED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 8A
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Packaging: Tape & Reel (TR)
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8750 Stücke - Preis und Lieferfrist anzeigen
3000+ 3.68 EUR
SIC438BED-T1-GE3 sic437.pdf
SIC438BED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJUSTABLE 8A
Topology: Buck
Voltage - Input (Max): 28V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
auf Bestellung 8750 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
4+ 6.99 EUR
10+ 6.27 EUR
25+ 5.91 EUR
100+ 5.04 EUR
250+ 4.73 EUR
500+ 4.14 EUR
1000+ 3.68 EUR
SIC431AED-T1-GE3 sic431.pdf
SIC431AED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 24A MLP44-24
Output Type: Adjustable
Package / Case: 24-PowerWFQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.6V
Voltage - Input (Min): 3V
Voltage - Output (Max): 20V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP44-24
Topology: Buck
Voltage - Input (Max): 24V
Frequency - Switching: 300kHz ~ 1MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output: 24A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC461EVB sic46x.pdf
SIC461EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC461
Part Status: Active
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Current - Output: 10A
Voltage - Input: 4.5V ~ 60V
Regulator Topology: Buck
Board Type: Fully Populated
Supplied Contents: Board(s)
Utilized IC / Part: SIC461
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
SIC462EVB sic46x.pdf
SIC462EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC462
Utilized IC / Part: SIC462
Supplied Contents: Board(s)
Board Type: Fully Populated
Regulator Topology: Buck
Voltage - Input: 4.5V ~ 60V
Current - Output: 6A
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Part Status: Active
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
SIC463EVB sic46x.pdf
SIC463EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC463
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 4A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC463
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
SIC464EVB sic46x.pdf
SIC464EVB
Hersteller: Vishay Siliconix
Description: REF BRD MICROBUCK SIC464
Packaging: Box
Voltage - Input: 4.5V ~ 60V
Current - Output: 2A
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIC464
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke
Lieferzeit 21-28 Tag (e)
1+ 261.48 EUR
SIC462ED-T1-GE3 sic46x.pdf
SIC462ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 6A MLP55-27
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 60V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 55.2V
Current - Output: 6A
Frequency - Switching: 100kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC462
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1552 Stücke - Preis und Lieferfrist anzeigen
SIC463ED-T1-GE3 sic46x.pdf
SIC463ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 4A SYNC MLP27-55
Packaging: Tape & Reel (TR)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 60V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 55.2V
Current - Output: 4A
Frequency - Switching: 100kHz ~ 2MHz
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC464ED-T1-GE3 sic46x.pdf
SIC464ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 2A MLP55-27
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 55.2V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIC464ED-T1-GE3 sic46x.pdf
SIC464ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 2A MLP55-27
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® MLP55-27
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 2MHz
Voltage - Input (Max): 60V
Topology: Buck
Supplier Device Package: PowerPAK® MLP55-27
Synchronous Rectifier: Yes
Voltage - Output (Max): 55.2V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
auf Bestellung 53 Stücke
Lieferzeit 21-28 Tag (e)
SI4864DY-T1-GE3 71449.pdf
SI4864DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 17A 8SO
Base Part Number: SI4864
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2407 Stücke
Lieferzeit 21-28 Tag (e)
SIUD412ED-T1-GE3 siud412ed.pdf
SIUD412ED-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 500MA PWRPAK0806
Input Capacitance (Ciss) (Max) @ Vds: 21pF @ 6V
Vgs (Max): ±5V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 0.71nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Package / Case: PowerPAK® 0806
Supplier Device Package: PowerPAK® 0806
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
auf Bestellung 949 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3711 Stücke - Preis und Lieferfrist anzeigen
SIR692DP-T1-RE3 sir692dp.pdf
SIR692DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 24.2A PPAK SO-8
Base Part Number: SIR692
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 125V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10507 Stücke - Preis und Lieferfrist anzeigen
SIR692DP-T1-RE3 sir692dp.pdf
SIR692DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 24.2A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1405pF @ 125V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 7.5V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 63mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.2A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SIR692
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 104W (Tc)
Manufacturer: Vishay Siliconix
auf Bestellung 2029 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8478 Stücke - Preis und Lieferfrist anzeigen
SUP50020E-GE3 sup50020e.pdf
SUP50020E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SUP50020
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 345 Stücke
Lieferzeit 21-28 Tag (e)
SIRA90DP-T1-RE3 sira90dp.pdf
SIRA90DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A PPAK SO-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 153nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 10180pF @ 15V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIRA90
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4141 Stücke - Preis und Lieferfrist anzeigen
SUP90220E-GE3 sup90220e.pdf
SUP90220E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 64A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 230W (Tc)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR690DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A SO-8
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1935pF @ 100V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA421DJ-T1-GE3 sia421dj.pdf
SIA421DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIA421
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
auf Bestellung 28631 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12005 Stücke - Preis und Lieferfrist anzeigen
SQD45P03-12_GE3 sqd45p03.pdf
SQD45P03-12_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7111EDN-T1-GE3 si7111edn.pdf
SI7111EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 2.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI7111
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 52W (Tc)
auf Bestellung 3868 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5677 Stücke - Preis und Lieferfrist anzeigen
SI1424EDH-T1-GE3 si1424ed.pdf
SI1424EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4A SOT-363
Base Part Number: SI1424
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3037 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4219 Stücke - Preis und Lieferfrist anzeigen
DG417DY-T1-E3 dg417.pdf
DG417DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPST 8SOIC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Supplier Device Package: 8-SOIC
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60ET1-GE3 sihb22n60e.pdf
SIHB22N60ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 785 Stücke - Preis und Lieferfrist anzeigen
SIHA22N60AEL-GE3 SIHA22N60AEL.pdf
SIHA22N60AEL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Manufacturer: Vishay Siliconix
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA22
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
SIHP22N60AEL-GE3 SIHP22N60AEL.pdf
SIHP22N60AEL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 600V
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60AEL-GE3 SIHB22N60AEL.pdf
SIHB22N60AEL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1757pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
SIHP22N60EL-GE3 sihp22n60el.pdf
SIHP22N60EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA22N60EL-E3 siha22n60el.pdf
SIHA22N60EL-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 21A TO220
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60EL-GE3 sihb22n60el.pdf
SIHB22N60EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 197mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 100V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB22N60ET5-GE3 sihb22n60e.pdf
SIHB22N60ET5-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4848ADY-T1-GE3 si4848ady.pdf
SI4848ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 5.5A 8SOIC
Base Part Number: SI4848
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 84mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5548 Stücke - Preis und Lieferfrist anzeigen
SI4848ADY-T1-GE3 si4848ady.pdf
SI4848ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 5.5A 8SOIC
Manufacturer: Vishay Siliconix
Base Part Number: SI4848
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 84mOhm @ 3.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5548 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
SQD40131EL_GE3 sqd40131el.pdf
SQD40131EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252AA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 62W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4864 Stücke - Preis und Lieferfrist anzeigen
SIHA11N80E-GE3 siha11n80e.pdf
SIHA11N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 12A TO220
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 454 Stücke
Lieferzeit 21-28 Tag (e)
3+ 9 EUR
10+ 8.09 EUR
100+ 6.63 EUR
SIHG11N80E-GE3 sihg11n80e.pdf
SIHG11N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 12A TO247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP11N80E-GE3 sihp11n80e.pdf
SIHP11N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 12A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 18 Stücke
Lieferzeit 21-28 Tag (e)
3+ 8.97 EUR
10+ 8.06 EUR
SI7111EDN-T1-GE3 si7111edn.pdf
SI7111EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 60A PPAK1212-8
Rds On (Max) @ Id, Vgs: 8.55mOhm @ 15A, 4.5V
Base Part Number: SI7111
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 2.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 52W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 15V
Vgs (Max): ±12V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 9545 Stücke - Preis und Lieferfrist anzeigen
SQM200N04-1M7L_GE3 sqm200n04-1m7l.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO-263
Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SQM200N
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11168pF @ 20V
Vgs (Max): ±20V
auf Bestellung 382 Stücke
Lieferzeit 21-28 Tag (e)
SIHF530STRL-GE3 sihf530s.pdf
SIHF530STRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHF530
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG1412EEN-T1-GE4 dg1411e.pdf
DG1412EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16QFN
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-QFN (4x4)
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG1412EEQ-T1-GE4 dg1411e.pdf
DG1412EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST QUAD 16TSSOP
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Channel-to-Channel Matching (ΔRon): 40mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -104dB @ 1MHz
Charge Injection: -41pC
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 150MHz
On-State Resistance (Max): 1.5Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8340 Stücke - Preis und Lieferfrist anzeigen
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