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SUP90P06-09L-E3 SUP90P06-09L-E3 Vishay Siliconix sup90p06-09l.pdf Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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SUV85N10-10-E3 SUV85N10-10-E3 Vishay Siliconix packaging.pdf Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SY3443BDV-T1-E3 Vishay Siliconix Description: MOSFET P-CH D-S 2.5V D2PAK
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SY3469DV-T1-E3 Vishay Siliconix Description: MOSFET P-CH D-S 20V D2PAK
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SYM110N04-03-E3 Vishay Siliconix Description: MOSFET N-CH D-S 40V
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TN2404K-T1-GE3 TN2404K-T1-GE3 Vishay Siliconix tn2404k.pdf Description: MOSFET N-CH 240V 200MA SOT23-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
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TP0101K-T1-GE3 TP0101K-T1-GE3 Vishay Siliconix 72692.pdf Description: MOSFET P-CH D-S 20V TO236
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TP0202K-T1-GE3 TP0202K-T1-GE3 Vishay Siliconix 71609.pdf Description: MOSFET P-CH 30V 385MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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TP0610K-T1-GE3 TP0610K-T1-GE3 Vishay Siliconix tp0610k.pdf Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SI4176DY-T1-E3 SI4176DY-T1-E3 Vishay Siliconix si4176dy.pdf Description: MOSFET N-CH 30V 12A 8SO
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SI4178DY-T1-E3 SI4178DY-T1-E3 Vishay Siliconix si4178dy-t1-e3.pdf Description: MOSFET N-CH 30V 12A 8SO
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Si4228DY-T1-E3 Si4228DY-T1-E3 Vishay Siliconix si4228dy-t1-e3.pdf Description: MOSFET 2N-CH 25V 8A 8SO
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SI4276DY-T1-E3 SI4276DY-T1-E3 Vishay Siliconix si4276dy-t1-e3.pdf Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SI4804CDY-T1-E3 SI4804CDY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SIHG47N60S-E3 SIHG47N60S-E3 Vishay Siliconix sihg47n6.pdf Description: MOSFET N-CH 600V 47A TO247AC
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SIP32411DNP-T1-GE4 SIP32411DNP-T1-GE4 Vishay Siliconix sip32411.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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SIP32411DR-T1-GE3 SIP32411DR-T1-GE3 Vishay Siliconix sip32411.pdf Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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SIP32431DNP3-T1GE4 SIP32431DNP3-T1GE4 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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SIP32431DR3-T1GE3 SIP32431DR3-T1GE3 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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SI1315DL-T1-GE3 SI1315DL-T1-GE3 Vishay Siliconix si1315dl.pdf Description: MOSFET P-CH 8V 900MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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SI5457DC-T1-GE3 SI5457DC-T1-GE3 Vishay Siliconix si5457dc.pdf Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
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SIP32411DNP-T1-GE4 SIP32411DNP-T1-GE4 Vishay Siliconix sip32411.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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SIP32411DR-T1-GE3 SIP32411DR-T1-GE3 Vishay Siliconix sip32411.pdf Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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SIP32431DR3-T1GE3 SIP32431DR3-T1GE3 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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SIP32431DNP3-T1GE4 SIP32431DNP3-T1GE4 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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SQD50N04-09H-GE3 SQD50N04-09H-GE3 Vishay Siliconix sqd50n04.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
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SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
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SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
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DG721DQ-T1-GE3 DG721DQ-T1-GE3 Vishay Siliconix 49281_pt0315.pdf Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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DG723DQ-T1-GE3 DG723DQ-T1-GE3 Vishay Siliconix Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
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DG9236DN-T1-E4 DG9236DN-T1-E4 Vishay Siliconix Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DG9253EN-T1-E4 DG9253EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Voltage - Supply, Single (V+): 2.7V ~ 16V
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DG721DQ-T1-GE3 DG721DQ-T1-GE3 Vishay Siliconix 49281_pt0315.pdf Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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DG723DQ-T1-GE3 DG723DQ-T1-GE3 Vishay Siliconix Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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DG9236DN-T1-E4 DG9236DN-T1-E4 Vishay Siliconix Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
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DG9252EN-T1-E4 DG9252EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MULTIPLEXER DUAL 4CH 16QFN
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 449MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
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DG9253EN-T1-E4 DG9253EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
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SIP32413DNP-T1-GE4 SIP32413DNP-T1-GE4 Vishay Siliconix sip32413.pdf Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
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DG2537DQ-T1-GE3 DG2537DQ-T1-GE3 Vishay Siliconix dg2537.pdf Description: IC SWITCH SPST 4.5 OHM 10MSOP
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DG2538DQ-T1-GE3 DG2538DQ-T1-GE3 Vishay Siliconix dg2537.pdf Description: IC SWITCH SPST 4.5 OHM 10MSOP
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DG2539DQ-T1-GE3 DG2539DQ-T1-GE3 Vishay Siliconix dg2537.pdf Description: IC SWITCH SPST 4.5 OHM 10MSOP
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DG2599DN-T1-GE4 DG2599DN-T1-GE4 Vishay Siliconix dg2599.pdf Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 9pF
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Single (V+): 1.65V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 186MHz
On-State Resistance (Max): 1.1Ohm
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DG2735ADN-T1-GE4 DG2735ADN-T1-GE4 Vishay Siliconix dg2735a.pdf Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
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DG722DQ-T1-GE3 DG722DQ-T1-GE3 Vishay Siliconix 49281_pt0315.pdf Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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DG9251EN-T1-E4 DG9251EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MUX 8:1 182OHM 16MINIQFN
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 314MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
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DG9454EN-T1-E4 DG9454EN-T1-E4 Vishay Siliconix dg9454.pdf Description: IC MUX SPDT TRIPLE 16QFN
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SIC414CD-T1-GE3 SIC414CD-T1-GE3 Vishay Siliconix sic414_sic424.pdf Description: IC REG DL BUCK/LNR SYNC 28MLPQ
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SIC779CD-T1-GE3 SIC779CD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 40A PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 40A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
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SIP32414DNP-T1-GE4 SIP32414DNP-T1-GE4 Vishay Siliconix sip32413.pdf Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
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SIHG47N60E-E3 SIHG47N60E-E3 Vishay Siliconix sihg47n60e.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
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SIHF22N60E-E3 SIHF22N60E-E3 Vishay Siliconix sihf22n60e.pdf Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
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SIHG22N60E-E3 SIHG22N60E-E3 Vishay Siliconix sihg22n60e.pdf Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
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SiHB22N60E-E3 SiHB22N60E-E3 Vishay Siliconix sihb22n60e.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
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SiHG30N60E-E3 SiHG30N60E-E3 Vishay Siliconix sihg30n60e.pdf Description: MOSFET N-CH 600V 29A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SiHF30N60E-E3 SiHF30N60E-E3 Vishay Siliconix sihf30n60e.pdf Description: MOSFET N-CH 600V 29A TO220
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SIHG24N65E-E3 SIHG24N65E-E3 Vishay Siliconix sihg24n6.pdf Description: MOSFET N-CH 650V 24A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SiHP24N65E-E3 SiHP24N65E-E3 Vishay Siliconix sihp24n65e.pdf Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
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SiHB24N65E-E3 SiHB24N65E-E3 Vishay Siliconix sihb24n65e.pdf Description: MOSFET N-CH 650V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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SIHF12N60E-E3 SIHF12N60E-E3 Vishay Siliconix sihf12n6.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP12N60E-E3 SIHP12N60E-E3 Vishay Siliconix sihp12n6.pdf Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
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SUP90P06-09L-E3 sup90p06-09l.pdf
SUP90P06-09L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
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SUV85N10-10-E3 packaging.pdf
SUV85N10-10-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SY3443BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 2.5V D2PAK
Produkt ist nicht verfügbar
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SY3469DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V D2PAK
Produkt ist nicht verfügbar
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SYM110N04-03-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V
Produkt ist nicht verfügbar
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TN2404K-T1-GE3 tn2404k.pdf
TN2404K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Produkt ist nicht verfügbar
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TP0101K-T1-GE3 72692.pdf
TP0101K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V TO236
Produkt ist nicht verfügbar
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TP0202K-T1-GE3 71609.pdf
TP0202K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 385MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TP0610K-T1-GE3 tp0610k.pdf
TP0610K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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3000+0.3 EUR
6000+0.27 EUR
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SI4176DY-T1-E3 si4176dy.pdf
SI4176DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Produkt ist nicht verfügbar
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SI4178DY-T1-E3 si4178dy-t1-e3.pdf
SI4178DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
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Si4228DY-T1-E3 si4228dy-t1-e3.pdf
Si4228DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SO
Produkt ist nicht verfügbar
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SI4276DY-T1-E3 si4276dy-t1-e3.pdf
SI4276DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4804CDY-T1-E3
SI4804CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIHG47N60S-E3 sihg47n6.pdf
SIHG47N60S-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
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SIP32411DNP-T1-GE4 sip32411.pdf
SIP32411DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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3000+0.36 EUR
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SIP32411DR-T1-GE3 sip32411.pdf
SIP32411DR-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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3000+0.62 EUR
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SIP32431DNP3-T1GE4 sip32431.pdf
SIP32431DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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3000+0.52 EUR
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SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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SI1315DL-T1-GE3 si1315dl.pdf
SI1315DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 900MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI5457DC-T1-GE3 si5457dc.pdf
SI5457DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
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3000+0.36 EUR
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SIP32411DNP-T1-GE4 sip32411.pdf
SIP32411DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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26+0.82 EUR
37+0.57 EUR
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SIP32411DR-T1-GE3 sip32411.pdf
SIP32411DR-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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16+1.36 EUR
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SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
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21+1.02 EUR
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SIP32431DNP3-T1GE4 sip32431.pdf
SIP32431DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
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18+1.18 EUR
26+0.83 EUR
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SQD50N04-09H-GE3 sqd50n04.pdf
SQD50N04-09H-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Produkt ist nicht verfügbar
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SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
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SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
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DG721DQ-T1-GE3 49281_pt0315.pdf
DG721DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DG723DQ-T1-GE3
DG723DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
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DG9236DN-T1-E4
DG9236DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DG9253EN-T1-E4 dg9251.pdf
DG9253EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Voltage - Supply, Single (V+): 2.7V ~ 16V
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DG721DQ-T1-GE3 49281_pt0315.pdf
DG721DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG723DQ-T1-GE3
DG723DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG9236DN-T1-E4
DG9236DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG9252EN-T1-E4 dg9251.pdf
DG9252EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4CH 16QFN
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 449MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Produkt ist nicht verfügbar
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DG9253EN-T1-E4 dg9251.pdf
DG9253EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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SIP32413DNP-T1-GE4 sip32413.pdf
SIP32413DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
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AnzahlPrivatkunde
3000+0.61 EUR
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DG2537DQ-T1-GE3 dg2537.pdf
DG2537DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
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DG2538DQ-T1-GE3 dg2537.pdf
DG2538DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
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DG2539DQ-T1-GE3 dg2537.pdf
DG2539DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
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DG2599DN-T1-GE4 dg2599.pdf
DG2599DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 9pF
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Single (V+): 1.65V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 186MHz
On-State Resistance (Max): 1.1Ohm
Produkt ist nicht verfügbar
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DG2735ADN-T1-GE4 dg2735a.pdf
DG2735ADN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
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3000+0.81 EUR
6000+0.79 EUR
15000+0.77 EUR
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DG722DQ-T1-GE3 49281_pt0315.pdf
DG722DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG9251EN-T1-E4 dg9251.pdf
DG9251EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 182OHM 16MINIQFN
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 314MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DG9454EN-T1-E4 dg9454.pdf
DG9454EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX SPDT TRIPLE 16QFN
Produkt ist nicht verfügbar
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SIC414CD-T1-GE3 sic414_sic424.pdf
SIC414CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
Produkt ist nicht verfügbar
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SIC779CD-T1-GE3
SIC779CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 40A PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 40A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
3000+2.21 EUR
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SIP32414DNP-T1-GE4 sip32413.pdf
SIP32414DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
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AnzahlPrivatkunde
3000+0.61 EUR
Mindestbestellmenge: 3000 Stücke
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SIHG47N60E-E3 sihg47n60e.pdf
SIHG47N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
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2+20.06 EUR
25+12.2 EUR
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SIHF22N60E-E3 sihf22n60e.pdf
SIHF22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
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SIHG22N60E-E3 sihg22n60e.pdf
SIHG22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
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3+10.25 EUR
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100+4.88 EUR
500+4.06 EUR
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SiHB22N60E-E3 sihb22n60e.pdf
SiHB22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
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SiHG30N60E-E3 sihg30n60e.pdf
SiHG30N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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SiHF30N60E-E3 sihf30n60e.pdf
SiHF30N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220
auf Bestellung 496 Stücke:
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SIHG24N65E-E3 sihg24n6.pdf
SIHG24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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SiHP24N65E-E3 sihp24n65e.pdf
SiHP24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
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SiHB24N65E-E3 sihb24n65e.pdf
SiHB24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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SIHF12N60E-E3 sihf12n6.pdf
SIHF12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
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SIHP12N60E-E3 sihp12n6.pdf
SIHP12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
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