Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11098) > Seite 86 nach 185

Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 81 82 83 84 85 86 87 88 89 90 91 108 126 144 162 180 185  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIP32431DNP3-T1GE4 SIP32431DNP3-T1GE4 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 369000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
6000+0.37 EUR
9000+0.36 EUR
21000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP32431DR3-T1GE3 SIP32431DR3-T1GE3 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.37 EUR
6000+0.36 EUR
15000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SI1315DL-T1-GE3 SI1315DL-T1-GE3 Vishay Siliconix si1315dl.pdf Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5457DC-T1-GE3 SI5457DC-T1-GE3 Vishay Siliconix si5457dc.pdf Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP32411DNP-T1-GE4 SIP32411DNP-T1-GE4 Vishay Siliconix sip32411.pdf Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6024 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+0.48 EUR
41+0.43 EUR
100+0.37 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
SIP32411DR-T1-GE3 SIP32411DR-T1-GE3 Vishay Siliconix sip32411.pdf Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 10516 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
22+0.81 EUR
25+0.73 EUR
100+0.64 EUR
250+0.59 EUR
500+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SIP32431DR3-T1GE3 SIP32431DR3-T1GE3 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 60481 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
30+0.59 EUR
34+0.53 EUR
100+0.46 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.39 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SIP32431DNP3-T1GE4 SIP32431DNP3-T1GE4 Vishay Siliconix sip32431.pdf Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 369984 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
30+0.6 EUR
33+0.53 EUR
100+0.46 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SQD50N04-09H-GE3 SQD50N04-09H-GE3 Vishay Siliconix sqd50n04.pdf Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJ412EP-T1-GE3 SQJ412EP-T1-GE3 Vishay Siliconix sqj412ep.pdf Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DG721DQ-T1-GE3 DG721DQ-T1-GE3 Vishay Siliconix 49281_pt0315.pdf Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG723DQ-T1-GE3 DG723DQ-T1-GE3 Vishay Siliconix Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+2.48 EUR
25+2.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DG9236DN-T1-E4 DG9236DN-T1-E4 Vishay Siliconix Description: IC SW SPDTX2 145OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 145Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Charge Injection: 6pC
Crosstalk: -70dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9253EN-T1-E4 DG9253EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 480MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG721DQ-T1-GE3 DG721DQ-T1-GE3 Vishay Siliconix 49281_pt0315.pdf Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG723DQ-T1-GE3 DG723DQ-T1-GE3 Vishay Siliconix Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9236DN-T1-E4 DG9236DN-T1-E4 Vishay Siliconix Description: IC SW SPDTX2 145OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 145Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Charge Injection: 6pC
Crosstalk: -70dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9252EN-T1-E4 DG9252EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MULTIPLEXER DUAL 4CH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 449MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9253EN-T1-E4 DG9253EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 480MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIP32413DNP-T1-GE4 SIP32413DNP-T1-GE4 Vishay Siliconix sip32413.pdf Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
6000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DG2537DQ-T1-GE3 DG2537DQ-T1-GE3 Vishay Siliconix dg2537.pdf Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2538DQ-T1-GE3 DG2538DQ-T1-GE3 Vishay Siliconix dg2537.pdf Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2539DQ-T1-GE3 DG2539DQ-T1-GE3 Vishay Siliconix dg2537.pdf Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2599DN-T1-GE4 DG2599DN-T1-GE4 Vishay Siliconix dg2599.pdf Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 186MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 5V
Charge Injection: 10pC
Crosstalk: -110dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Channel Capacitance (CS(off), CD(off)): 9pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2735ADN-T1-GE4 DG2735ADN-T1-GE4 Vishay Siliconix dg2735a.pdf Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.68 EUR
6000+0.67 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DG722DQ-T1-GE3 DG722DQ-T1-GE3 Vishay Siliconix 49281_pt0315.pdf Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9251EN-T1-E4 DG9251EN-T1-E4 Vishay Siliconix dg9251.pdf Description: IC MUX 8:1 182OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 314MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9454EN-T1-E4 DG9454EN-T1-E4 Vishay Siliconix dg9454.pdf Description: IC MUX SPDT TRIPLE 16QFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIC414CD-T1-GE3 SIC414CD-T1-GE3 Vishay Siliconix sic414_sic424.pdf Description: IC REG DL BUCK/LNR SYNC 28MLPQ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIC779CD-T1-GE3 SIC779CD-T1-GE3 Vishay Siliconix Description: IC HALF BRIDGE DRIVER 40A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.86 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP32414DNP-T1-GE4 SIP32414DNP-T1-GE4 Vishay Siliconix sip32413.pdf Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIHG47N60E-E3 SIHG47N60E-E3 Vishay Siliconix sihg47n60e.pdf Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.89 EUR
25+9.66 EUR
100+8.18 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHF22N60E-E3 SIHF22N60E-E3 Vishay Siliconix sihf22n60e.pdf Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG22N60E-E3 SIHG22N60E-E3 Vishay Siliconix sihg22n60e.pdf Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHB22N60E-E3 SiHB22N60E-E3 Vishay Siliconix sihb22n60e.pdf Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHP30N60E-E3 SiHP30N60E-E3 Vishay Siliconix sihp30n60e.pdf Description: MOSFET N-CH 600V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHG30N60E-E3 SiHG30N60E-E3 Vishay Siliconix sihg30n60e.pdf Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHF30N60E-E3 SiHF30N60E-E3 Vishay Siliconix sihf30n60e.pdf Description: MOSFET N-CH 600V 29A TO220
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N65E-E3 SIHG24N65E-E3 Vishay Siliconix sihg24n6.pdf Description: MOSFET N-CH 650V 24A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHP24N65E-E3 SiHP24N65E-E3 Vishay Siliconix sihp24n65e.pdf Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHB24N65E-E3 SiHB24N65E-E3 Vishay Siliconix sihb24n65e.pdf Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHF12N60E-E3 SIHF12N60E-E3 Vishay Siliconix sihf12n6.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP12N60E-E3 SIHP12N60E-E3 Vishay Siliconix sihp12n6.pdf Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHF15N60E-E3 SIHF15N60E-E3 Vishay Siliconix sihf15n60e.pdf Description: MOSFET N-CH 600V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix sq3427ee.pdf Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix sq3419ee.pdf Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3418EEV-T1-GE3 SQ3418EEV-T1-GE3 Vishay Siliconix sq3418ee.pdf Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 Vishay Siliconix sq3426eev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ1431EH-T1-GE3 SQ1431EH-T1-GE3 Vishay Siliconix sq1431eh.pdf Description: MOSFET P-CH 30V 3A SC70
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ1470EH-T1-GE3 SQ1470EH-T1-GE3 Vishay Siliconix sq1470eh.pdf Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3456BEV-T1-GE3 SQ3456BEV-T1-GE3 Vishay Siliconix 67934.pdf Description: MOSFET N-CH 30V 7.8A 6TSOP
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3460EV-T1-GE3 SQ3460EV-T1-GE3 Vishay Siliconix sq3460ev.pdf Description: MOSFET N-CH 20V 8A 6TSOP
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3442EV-T1-GE3 SQ3442EV-T1-GE3 Vishay Siliconix sq3442ev.pdf Description: MOSFET N-CH 20V 4.3A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ1421EDH-T1_GE3 SQ1421EDH-T1_GE3 Vishay Siliconix sq1421edh.pdf Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 3607 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+0.81 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SQ1420EEH-T1-GE3 SQ1420EEH-T1-GE3 Vishay Siliconix sq1420ee.pdf Description: MOSFET N-CH 60V 1.6A SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3427EEV-T1-GE3 SQ3427EEV-T1-GE3 Vishay Siliconix sq3427ee.pdf Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EEV-T1-GE3 SQ3419EEV-T1-GE3 Vishay Siliconix sq3419ee.pdf Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3418EEV-T1-GE3 SQ3418EEV-T1-GE3 Vishay Siliconix sq3418ee.pdf Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3426EEV-T1-GE3 SQ3426EEV-T1-GE3 Vishay Siliconix sq3426eev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIP32431DNP3-T1GE4 sip32431.pdf
SIP32431DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 369000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.38 EUR
6000+0.37 EUR
9000+0.36 EUR
21000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.37 EUR
6000+0.36 EUR
15000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SI1315DL-T1-GE3 si1315dl.pdf
SI1315DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5457DC-T1-GE3 si5457dc.pdf
SI5457DC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.28 EUR
9000+0.27 EUR
15000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP32411DNP-T1-GE4 sip32411.pdf
SIP32411DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
41+0.43 EUR
100+0.37 EUR
250+0.35 EUR
500+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
SIP32411DR-T1-GE3 sip32411.pdf
SIP32411DR-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 10516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
22+0.81 EUR
25+0.73 EUR
100+0.64 EUR
250+0.59 EUR
500+0.57 EUR
1000+0.55 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 60481 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
30+0.59 EUR
34+0.53 EUR
100+0.46 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.39 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SIP32431DNP3-T1GE4 sip32431.pdf
SIP32431DNP3-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 369984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
30+0.6 EUR
33+0.53 EUR
100+0.46 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
SQD50N04-09H-GE3 sqd50n04.pdf
SQD50N04-09H-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQJ412EP-T1-GE3 sqj412ep.pdf
SQJ412EP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DG721DQ-T1-GE3 49281_pt0315.pdf
DG721DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG723DQ-T1-GE3
DG723DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+2.48 EUR
25+2.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DG9236DN-T1-E4
DG9236DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 145Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Charge Injection: 6pC
Crosstalk: -70dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9253EN-T1-E4 dg9251.pdf
DG9253EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 480MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG721DQ-T1-GE3 49281_pt0315.pdf
DG721DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG723DQ-T1-GE3
DG723DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9236DN-T1-E4
DG9236DN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 145Ohm
-3db Bandwidth: 800MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Charge Injection: 6pC
Crosstalk: -70dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel Capacitance (CS(off), CD(off)): 2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9252EN-T1-E4 dg9251.pdf
DG9252EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4CH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 449MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9253EN-T1-E4 dg9251.pdf
DG9253EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 480MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIP32413DNP-T1-GE4 sip32413.pdf
SIP32413DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
6000+0.57 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DG2537DQ-T1-GE3 dg2537.pdf
DG2537DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2538DQ-T1-GE3 dg2537.pdf
DG2538DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2539DQ-T1-GE3 dg2537.pdf
DG2539DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2599DN-T1-GE4 dg2599.pdf
DG2599DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 186MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 5V
Charge Injection: 10pC
Crosstalk: -110dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Channel Capacitance (CS(off), CD(off)): 9pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG2735ADN-T1-GE4 dg2735a.pdf
DG2735ADN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
6000+0.67 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DG722DQ-T1-GE3 49281_pt0315.pdf
DG722DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9251EN-T1-E4 dg9251.pdf
DG9251EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 182OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 314MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DG9454EN-T1-E4 dg9454.pdf
DG9454EN-T1-E4
Hersteller: Vishay Siliconix
Description: IC MUX SPDT TRIPLE 16QFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIC414CD-T1-GE3 sic414_sic424.pdf
SIC414CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIC779CD-T1-GE3
SIC779CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 40A PPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® MLP66-40
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Applications: Synchronous Buck Converters
Current - Output / Channel: 40A
Technology: DrMOS
Voltage - Load: 3V ~ 16V
Supplier Device Package: PowerPAK® MLP66-40
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.86 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIP32414DNP-T1-GE4 sip32413.pdf
SIP32414DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SIHG47N60E-E3 sihg47n60e.pdf
SIHG47N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 24A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9620 pF @ 100 V
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.89 EUR
25+9.66 EUR
100+8.18 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHF22N60E-E3 sihf22n60e.pdf
SIHF22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHG22N60E-E3 sihg22n60e.pdf
SIHG22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHB22N60E-E3 sihb22n60e.pdf
SiHB22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHP30N60E-E3 sihp30n60e.pdf
SiHP30N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHG30N60E-E3 sihg30n60e.pdf
SiHG30N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHF30N60E-E3 sihf30n60e.pdf
SiHF30N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SIHG24N65E-E3 sihg24n6.pdf
SIHG24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHP24N65E-E3 sihp24n65e.pdf
SiHP24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SiHB24N65E-E3 sihb24n65e.pdf
SiHB24N65E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHF12N60E-E3 sihf12n6.pdf
SIHF12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHP12N60E-E3 sihp12n6.pdf
SIHP12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHF15N60E-E3 sihf15n60e.pdf
SIHF15N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3427EEV-T1-GE3 sq3427ee.pdf
SQ3427EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EEV-T1-GE3 sq3419ee.pdf
SQ3419EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3418EEV-T1-GE3 sq3418ee.pdf
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3426EEV-T1-GE3 sq3426eev.pdf
SQ3426EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ1431EH-T1-GE3 sq1431eh.pdf
SQ1431EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3A SC70
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ1470EH-T1-GE3 sq1470eh.pdf
SQ1470EH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.8A SC70
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3456BEV-T1-GE3 67934.pdf
SQ3456BEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.8A 6TSOP
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3460EV-T1-GE3 sq3460ev.pdf
SQ3460EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 8A 6TSOP
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3442EV-T1-GE3 sq3442ev.pdf
SQ3442EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ1421EDH-T1_GE3 sq1421edh.pdf
SQ1421EDH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
auf Bestellung 3607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
22+0.81 EUR
100+0.61 EUR
500+0.48 EUR
1000+0.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
SQ1420EEH-T1-GE3 sq1420ee.pdf
SQ1420EEH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 1.6A SC70-6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3427EEV-T1-GE3 sq3427ee.pdf
SQ3427EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.5A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3419EEV-T1-GE3 sq3419ee.pdf
SQ3419EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 7.4A 6TSOP
auf Bestellung 3419 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SQ3418EEV-T1-GE3 sq3418ee.pdf
SQ3418EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SQ3426EEV-T1-GE3 sq3426eev.pdf
SQ3426EEV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 36 54 72 81 82 83 84 85 86 87 88 89 90 91 108 126 144 162 180 185  [ Nächste Seite >> ]