Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11839) > Seite 84 nach 198
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SUP75P03-07-E3 | Vishay Siliconix |
 Description: MOSFET P-CH 30V 75A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP85N02-03-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 85A TO220AB Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 450mV @ 2mA (Min) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP85N03-04P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 85A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP85N04-03-E3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 85A TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP85N10-10P-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 227W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90N03-03-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 28.8A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90N08-4M8P-E3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 75V TO220AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90N08-6M8P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 75V 90A TO220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90N08-7M7P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 75V 90A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90N08-8M2P-E3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 75V TO220AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90N10-8M8P-E3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 100V TO220AB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90N15-18P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 90A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUP90P06-09L-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SUV85N10-10-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SY3443BDV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH D-S 2.5V D2PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SY3469DV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH D-S 20V D2PAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| SYM110N04-03-E3 | Vishay Siliconix | Description: MOSFET N-CH D-S 40V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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TN2404K-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 240V 200MA SOT23-3 Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Drain to Source Voltage (Vdss): 240 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP0101K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH D-S 20V TO236 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP0202K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 385MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TP0610K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 185MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4176DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI4178DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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Si4228DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 25V 8A 8SO |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI4276DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SO Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 3.6W, 2.8W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI4804CDY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 3.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIHG47N60S-E3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 47A TO247AC |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIP32411DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIP32411DR-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6 Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 101mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIP32431DNP3-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 105mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 459000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIP32431DR3-T1GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 147mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 262368 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1315DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 900MA SOT323 Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SC-70-3 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 300mW (Ta), 400mW (Tc) Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SI5457DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V Power Dissipation (Max): 5.7W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
auf Bestellung 26000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIP32411DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 5835 Stücke: Lieferzeit 10-14 Tag (e) |
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SIP32411DR-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6 Packaging: Cut Tape (CT) Features: Load Discharge, Slew Rate Controlled Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 101mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 21591 Stücke: Lieferzeit 10-14 Tag (e) |
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SIP32431DR3-T1GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 147mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 262958 Stücke: Lieferzeit 10-14 Tag (e) |
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SIP32431DNP3-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 4-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 105mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 461674 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04-09H-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SQJ412EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 |
auf Bestellung 1253 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SQJ412EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 32A PPAK SO-8 |
auf Bestellung 1253 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG721DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG723DQ-T1-GE3 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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DG9236DN-T1-E4 | Vishay Siliconix |
Description: IC SW SPDTX2 145OHM 10MINIQFN Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF Switch Time (Ton, Toff) (Max): 70ns, 55ns Channel-to-Channel Matching (ΔRon): 2Ohm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 10MHz Charge Injection: 6pC Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 10-miniQFN (1.4x1.8) -3db Bandwidth: 800MHz On-State Resistance (Max): 145Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG9253EN-T1-E4 | Vishay Siliconix |
Description: IC MULTIPLEXER TRPL 2-CH 16QFN Voltage - Supply, Single (V+): 2.7V ~ 16V Number of Circuits: 3 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC Voltage - Supply, Dual (V±): ±2.7V ~ 5V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 480MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG721DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG723DQ-T1-GE3 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG9236DN-T1-E4 | Vishay Siliconix |
Description: IC SW SPDTX2 145OHM 10MINIQFN Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF Switch Time (Ton, Toff) (Max): 70ns, 55ns Channel-to-Channel Matching (ΔRon): 2Ohm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 10MHz Charge Injection: 6pC Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 10-miniQFN (1.4x1.8) -3db Bandwidth: 800MHz On-State Resistance (Max): 145Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG9252EN-T1-E4 | Vishay Siliconix |
Description: IC MULTIPLEXER DUAL 4CH 16QFN Voltage - Supply, Dual (V±): ±2.7V ~ 5V Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 449MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) Number of Circuits: 2 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Multiplexer/Demultiplexer Circuit: 4:1 Switch Circuit: SP4T Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG9253EN-T1-E4 | Vishay Siliconix |
Description: IC MULTIPLEXER TRPL 2-CH 16QFN Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) Number of Circuits: 3 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC Voltage - Supply, Dual (V±): ±2.7V ~ 5V Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 480MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIP32413DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 8-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: 8-TDFN (2x2) Fault Protection: Reverse Current Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG2537DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST 4.5 OHM 10MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG2538DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST 4.5 OHM 10MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG2539DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST 4.5 OHM 10MSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DG2599DN-T1-GE4 | Vishay Siliconix |
Description: IC SW DPDTX2 1.1OHM 16MINIQFN Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 9pF Switch Time (Ton, Toff) (Max): 90ns, 70ns Multiplexer/Demultiplexer Circuit: 2:2 Switch Circuit: DPDT Crosstalk: -110dB @ 1MHz Charge Injection: 10pC Voltage - Supply, Single (V+): 1.65V ~ 5V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 186MHz On-State Resistance (Max): 1.1Ohm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DG2735ADN-T1-GE4 | Vishay Siliconix |
Description: IC SW SPDTX2 500MOHM 10MINIQFN Packaging: Tape & Reel (TR) Package / Case: 10-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 500mOhm -3db Bandwidth: 50MHz Supplier Device Package: 10-miniQFN (1.4x1.8) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Crosstalk: -70dB @ 100kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm Switch Time (Ton, Toff) (Max): 78ns, 58ns Channel Capacitance (CS(off), CD(off)): 55pF Current - Leakage (IS(off)) (Max): 2nA Part Status: Active Number of Circuits: 2 |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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DG722DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel-to-Channel Matching (ΔRon): 200mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -90dB @ 10MHz Charge Injection: 2.2pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V Supplier Device Package: 8-MSOP -3db Bandwidth: 366MHz On-State Resistance (Max): 4.5Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG9251EN-T1-E4 | Vishay Siliconix |
Description: IC MUX 8:1 182OHM 16MINIQFN Number of Circuits: 1 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel-to-Channel Matching (ΔRon): 3.1Ohm Multiplexer/Demultiplexer Circuit: 8:1 Crosstalk: -67dB @ 10MHz Charge Injection: 4.1pC Voltage - Supply, Dual (V±): ±2.7V ~ 5V Voltage - Supply, Single (V+): 2.7V ~ 16V Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 314MHz On-State Resistance (Max): 182Ohm Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DG9454EN-T1-E4 | Vishay Siliconix |
Description: IC MUX SPDT TRIPLE 16QFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
.jpg "SIC414CD-T1-GE3") |
SIC414CD-T1-GE3 | Vishay Siliconix |
Description: IC REG DL BUCK/LNR SYNC 28MLPQ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SIC779CD-T1-GE3 | Vishay Siliconix |
Description: IC HALF BRIDGE DRIVER 40A PPAK Part Status: Active Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: PowerPAK® MLP66-40 Voltage - Load: 3V ~ 16V Technology: DrMOS Current - Output / Channel: 40A Applications: Synchronous Buck Converters Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: PowerPAK® MLP66-40 Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUP75P03-07-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET P-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SUP85N02-03-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 85A TO220AB
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 450mV @ 2mA (Min)
Description: MOSFET N-CH 20V 85A TO220AB
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 450mV @ 2mA (Min)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SUP85N03-04P-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SUP85N04-03-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 85A TO220AB
Description: MOSFET N-CH 40V 85A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SUP85N10-10P-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SUP90N03-03-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 28.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 28.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SUP90N08-4M8P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO220AB
Description: MOSFET N-CH D-S 75V TO220AB
Produkt ist nicht verfügbar
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| SUP90N08-6M8P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Description: MOSFET N-CH 75V 90A TO220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 272W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
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| SUP90N08-7M7P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 75V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SUP90N08-8M2P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO220AB
Description: MOSFET N-CH D-S 75V TO220AB
Produkt ist nicht verfügbar
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| SUP90N10-8M8P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO220AB
Description: MOSFET N-CH D-S 100V TO220AB
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| SUP90N15-18P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 150V 90A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SUP90P06-09L-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SUV85N10-10-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 85A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SY3443BDV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 2.5V D2PAK
Description: MOSFET P-CH D-S 2.5V D2PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SY3469DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V D2PAK
Description: MOSFET P-CH D-S 20V D2PAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SYM110N04-03-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V
Description: MOSFET N-CH D-S 40V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| TN2404K-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Description: MOSFET N-CH 240V 200MA SOT23-3
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Produkt ist nicht verfügbar
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| TP0101K-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V TO236
Description: MOSFET P-CH D-S 20V TO236
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| TP0202K-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 385MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 385MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TP0610K-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 185MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| SI4176DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Description: MOSFET N-CH 30V 12A 8SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| SI4178DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Description: MOSFET N-CH 30V 12A 8SO
Produkt ist nicht verfügbar
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| Si4228DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SO
Description: MOSFET 2N-CH 25V 8A 8SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| SI4276DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8A 8SO
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.6W, 2.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SI4804CDY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SIHG47N60S-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Description: MOSFET N-CH 600V 47A TO247AC
auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
| SIP32411DNP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.43 EUR |
| SIP32411DR-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.68 EUR |
| SIP32431DNP3-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 459000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.54 EUR |
| 6000+ | 0.52 EUR |
| 9000+ | 0.51 EUR |
| 21000+ | 0.5 EUR |
| SIP32431DR3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 262368 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.5 EUR |
| 6000+ | 0.48 EUR |
| 15000+ | 0.46 EUR |
| SI1315DL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 900MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 8V 900MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-70-3
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI5457DC-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 26000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.39 EUR |
| 9000+ | 0.36 EUR |
| SIP32411DNP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 5835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 31+ | 0.69 EUR |
| 34+ | 0.62 EUR |
| 100+ | 0.54 EUR |
| 250+ | 0.5 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.45 EUR |
| SIP32411DR-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 21591 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 21+ | 1 EUR |
| 25+ | 0.9 EUR |
| 100+ | 0.79 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.68 EUR |
| SIP32431DR3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 262958 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 29+ | 0.74 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.57 EUR |
| 250+ | 0.54 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.49 EUR |
| SIP32431DNP3-T1GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 461674 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.19 EUR |
| 25+ | 0.84 EUR |
| 28+ | 0.76 EUR |
| 100+ | 0.67 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.57 EUR |
| SQD50N04-09H-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQJ412EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
| SQJ412EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 10-14 Tag (e)
| DG721DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DG723DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.95 EUR |
| 25+ | 2.75 EUR |
| DG9236DN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DG9253EN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Voltage - Supply, Single (V+): 2.7V ~ 16V
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Voltage - Supply, Single (V+): 2.7V ~ 16V
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
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| DG721DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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| DG723DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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| DG9236DN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Description: IC SW SPDTX2 145OHM 10MINIQFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF
Switch Time (Ton, Toff) (Max): 70ns, 55ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 10MHz
Charge Injection: 6pC
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 10-miniQFN (1.4x1.8)
-3db Bandwidth: 800MHz
On-State Resistance (Max): 145Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DG9252EN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER DUAL 4CH 16QFN
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 449MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Description: IC MULTIPLEXER DUAL 4CH 16QFN
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 449MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.2pF, 6.6pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 4:1
Switch Circuit: SP4T
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DG9253EN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 3
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 480MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
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Im Einkaufswagen
Stück im Wert von UAH
| SIP32413DNP-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-TDFN (2x2)
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DG2537DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DG2538DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DG2539DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Description: IC SWITCH SPST 4.5 OHM 10MSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DG2599DN-T1-GE4 |
Hersteller: Vishay Siliconix
Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 9pF
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Single (V+): 1.65V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 186MHz
On-State Resistance (Max): 1.1Ohm
Description: IC SW DPDTX2 1.1OHM 16MINIQFN
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 9pF
Switch Time (Ton, Toff) (Max): 90ns, 70ns
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Single (V+): 1.65V ~ 5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 186MHz
On-State Resistance (Max): 1.1Ohm
Produkt ist nicht verfügbar
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| DG2735ADN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
Description: IC SW SPDTX2 500MOHM 10MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
-3db Bandwidth: 50MHz
Supplier Device Package: 10-miniQFN (1.4x1.8)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Channel Capacitance (CS(off), CD(off)): 55pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.95 EUR |
| 6000+ | 0.93 EUR |
| 9000+ | 0.92 EUR |
| 15000+ | 0.9 EUR |
| DG722DQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPST-NCX2 4.5OHM 8MSOP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel-to-Channel Matching (ΔRon): 200mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -90dB @ 10MHz
Charge Injection: 2.2pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 8-MSOP
-3db Bandwidth: 366MHz
On-State Resistance (Max): 4.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DG9251EN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 182OHM 16MINIQFN
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 314MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Description: IC MUX 8:1 182OHM 16MINIQFN
Number of Circuits: 1
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Multiplexer/Demultiplexer Circuit: 8:1
Crosstalk: -67dB @ 10MHz
Charge Injection: 4.1pC
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Voltage - Supply, Single (V+): 2.7V ~ 16V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 314MHz
On-State Resistance (Max): 182Ohm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| DG9454EN-T1-E4 |
|
Hersteller: Vishay Siliconix
Description: IC MUX SPDT TRIPLE 16QFN
Description: IC MUX SPDT TRIPLE 16QFN
Produkt ist nicht verfügbar
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| SIC414CD-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
Description: IC REG DL BUCK/LNR SYNC 28MLPQ
Produkt ist nicht verfügbar
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| SIC779CD-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 40A PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 40A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 40A PPAK
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP66-40
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 40A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP66-40
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.21 EUR |