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SIR172DP-T1-GE3 SIR172DP-T1-GE3 Vishay Siliconix sir172dp.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Produkt ist nicht verfügbar
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SIR406DP-T1-GE3 SIR406DP-T1-GE3 Vishay Siliconix SIR406DP.pdf Description: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 10 V
Produkt ist nicht verfügbar
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SIR410DP-T1-GE3 SIR410DP-T1-GE3 Vishay Siliconix sir410d.pdf Description: MOSFET N-CH 20V 35A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.72 EUR
Mindestbestellmenge: 3000
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SIR416DP-T1-GE3 SIR416DP-T1-GE3 Vishay Siliconix sir416dp.pdf Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
Produkt ist nicht verfügbar
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SIR418DP-T1-GE3 SIR418DP-T1-GE3 Vishay Siliconix sir418dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.87 EUR
6000+0.82 EUR
Mindestbestellmenge: 3000
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SIR422DP-T1-GE3 SIR422DP-T1-GE3 Vishay Siliconix sir422dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.77 EUR
6000+0.73 EUR
9000+0.72 EUR
Mindestbestellmenge: 3000
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SIR424DP-T1-GE3 SIR424DP-T1-GE3 Vishay Siliconix sir424dp.pdf Description: MOSFET N-CH 20V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Produkt ist nicht verfügbar
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SIR428DP-T1-GE3 SIR428DP-T1-GE3 Vishay Siliconix sir428dp.pdf Description: MOSFET N-CH D-S 30V PPAK 8SOIC
Produkt ist nicht verfügbar
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SIR432DP-T1-GE3 SIR432DP-T1-GE3 Vishay Siliconix sir432dp.pdf Description: MOSFET N-CH 100V 28.4A PPAK SO-8
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SIR436DP-T1-GE3 SIR436DP-T1-GE3 Vishay Siliconix sir436dp.pdf Description: MOSFET N-CH 25V 40A PPAK SO-8
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SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix sir460dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Produkt ist nicht verfügbar
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SIR484DP-T1-GE3 SIR484DP-T1-GE3 Vishay Siliconix sir484dp.pdf Description: MOSFET N-CH 20V 20A PPAK SO-8
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SIR494DP-T1-GE3 SIR494DP-T1-GE3 Vishay Siliconix sir494dp.pdf Description: MOSFET N-CH 12V 60A PPAK SO-8
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SIR874DP-T1-GE3 SIR874DP-T1-GE3 Vishay Siliconix sir874dp.pdf Description: MOSFET N-CH 25V 20A PPAK SO-8
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SIS410DN-T1-GE3 SIS410DN-T1-GE3 Vishay Siliconix sis410dn.pdf Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.68 EUR
6000+0.65 EUR
9000+0.63 EUR
Mindestbestellmenge: 3000
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SIS424DN-T1-GE3 SIS424DN-T1-GE3 Vishay Siliconix sis424dn.pdf Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19.6A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Produkt ist nicht verfügbar
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SIS430DN-T1-GE3 SIS430DN-T1-GE3 Vishay Siliconix sis430dn.pdf Description: MOSFET N-CH 25V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 12.5 V
Produkt ist nicht verfügbar
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SIS434DN-T1-GE3 SIS434DN-T1-GE3 Vishay Siliconix sis434dn.pdf Description: MOSFET N-CH 40V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
auf Bestellung 8986 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
6000+0.59 EUR
Mindestbestellmenge: 3000
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SIS436DN-T1-GE3 SIS436DN-T1-GE3 Vishay Siliconix sis436dn.pdf Description: MOSFET N-CH 25V 16A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
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SiS438DN-T1-GE3 SiS438DN-T1-GE3 Vishay Siliconix sis438dn.pdf Description: MOSFET N-CH 20V 16A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 10 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.45 EUR
9000+0.43 EUR
15000+0.42 EUR
Mindestbestellmenge: 3000
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SIZ700DT-T1-GE3 SIZ700DT-T1-GE3 Vishay Siliconix siz700dt.pdf Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
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SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 Vishay Siliconix siz704dt.pdf Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.7 EUR
Mindestbestellmenge: 3000
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SIZ720DT-T1-GE3 SIZ720DT-T1-GE3 Vishay Siliconix siz720dt.pdf Description: MOSFET 2N-CH 20V 16A 6POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
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SMMA511DJ-T1-GE3 SMMA511DJ-T1-GE3 Vishay Siliconix smma511d.pdf Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
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SMMB911DK-T1-GE3 Vishay Siliconix SMMB911DK-T1-GE3.pdf Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
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SQ2308ES-T1-GE3 SQ2308ES-T1-GE3 Vishay Siliconix SQ2308ES.pdf Description: MOSFET N-CH D-S 60V TO236
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SQ3442EV-T1-GE3 SQ3442EV-T1-GE3 Vishay Siliconix sq3442ev.pdf Description: MOSFET N-CH 20V 4.3A 6TSOP
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SQ3456EV-T1-GE3 Vishay Siliconix sq3456ev.pdf Description: MOSFET N-CH D-S 30V 6TSOP
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SQ4401DY-T1-GE3 SQ4401DY-T1-GE3 Vishay Siliconix sq4401dy.pdf Description: MOSFET P-CH 40V 15.8A 8SOIC
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SQ4410EY-T1-GE3 SQ4410EY-T1-GE3 Vishay Siliconix sq4410ey.pdf Description: MOSFET N-CH 30V 15A 8SOIC
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SQ4431EY-T1-GE3 SQ4431EY-T1-GE3 Vishay Siliconix sq4431ey.pdf Description: MOSFET P-CH 30V 10.8A 8SOIC
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SQ4470EY-T1-GE3 SQ4470EY-T1-GE3 Vishay Siliconix sq4470ey.pdf Description: MOSFET N-CH 60V 16A 8SOIC
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SQ4840EY-T1-GE3 SQ4840EY-T1-GE3 Vishay Siliconix sq4840ey.pdf Description: MOSFET N-CH 40V 20.7A 8SOIC
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SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 Vishay Siliconix sq4850ey.pdf Description: MOSFET N-CH 60V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.88 EUR
5000+0.84 EUR
12500+0.8 EUR
Mindestbestellmenge: 2500
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SQ4936EY-T1-GE3 SQ4936EY-T1-GE3 Vishay Siliconix sq4936ey.pdf Description: MOSFET 2N-CH 30V 7A 8SOIC
Produkt ist nicht verfügbar
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SQ4942EY-T1-GE3 SQ4942EY-T1-GE3 Vishay Siliconix sq4942ey.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
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SQ4946EY-T1-E3 SQ4946EY-T1-E3 Vishay Siliconix sq4946ey0.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ7002K-T1-GE3 SQ7002K-T1-GE3 Vishay Siliconix SQ7002K.pdf Description: MOSFET N-CH 60V 320MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
Produkt ist nicht verfügbar
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SQ7414EN-T1-E3 SQ7414EN-T1-E3 Vishay Siliconix sq7414en.pdf Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
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SQ7415EN-T1-E3 SQ7415EN-T1-E3 Vishay Siliconix sq7415en.pdf Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
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SQ9945AEY-T1-E3 SQ9945AEY-T1-E3 Vishay Siliconix sq9945ae.pdf Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SQD15N06-42L-GE3 SQD15N06-42L-GE3 Vishay Siliconix sqd15n06-42l.pdf Description: MOSFET N-CH 60V 15A TO252
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SQD19P06-60L_GE3 SQD19P06-60L_GE3 Vishay Siliconix sqd19p06.pdf Description: MOSFET P-CH 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD23N06-31L-GE3 SQD23N06-31L-GE3 Vishay Siliconix sqd23n06-31l.pdf Description: MOSFET N-CH 60V 23A TO252
Produkt ist nicht verfügbar
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SQD25N06-22L_GE3 SQD25N06-22L_GE3 Vishay Siliconix sqd25n06-22l.pdf Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Produkt ist nicht verfügbar
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SQD25N06-35L-GE3 Vishay Siliconix Description: MOSFET N-CH D-S 60V 25A TO252
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SQD25N15-52_GE3 SQD25N15-52_GE3 Vishay Siliconix sqd25n15-52.pdf Description: MOSFET N-CH 150V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.92 EUR
Mindestbestellmenge: 2000
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SQD35N05-26L-GE3 SQD35N05-26L-GE3 Vishay Siliconix sqd35n05.pdf Description: MOSFET N-CH 55V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD40N04-10A-GE3 SQD40N04-10A-GE3 Vishay Siliconix sqd40n04.pdf Description: MOSFET N-CH D-S 40V 42A TO252
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SQD40N06-25L-GE3 SQD40N06-25L-GE3 Vishay Siliconix Description: MOSFET N-CH 60V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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SQD40N10-25_GE3 SQD40N10-25_GE3 Vishay Siliconix sqd40n10-25.pdf Description: MOSFET N-CH 100V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD45N05-20L-GE3 SQD45N05-20L-GE3 Vishay Siliconix 72974.pdf Description: MOSFET N-CH 50V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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SQD45P03-12_GE3 SQD45P03-12_GE3 Vishay Siliconix sqd45p03.pdf Description: MOSFET P-CH 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.27 EUR
4000+1.2 EUR
Mindestbestellmenge: 2000
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SQD50N02-04-GE3 SQD50N02-04-GE3 Vishay Siliconix sqd50n02.pdf Description: MOSFET N-CH D-S 20V 50A TO252
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SQD50N03-06P-GE3 SQD50N03-06P-GE3 Vishay Siliconix sqd50n03.pdf Description: MOSFET N-CH D-S 30V 50A TO252
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SQD50N03-09-GE3 SQD50N03-09-GE3 Vishay Siliconix sqd50n03.pdf Description: MOSFET N-CH D-S 30V 50A TO252
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SQD50N06-07L-GE3 SQD50N06-07L-GE3 Vishay Siliconix sqd50n06.pdf Description: MOSFET N-CH 60V 50A TO252
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SQD50N06-09L-GE3 SQD50N06-09L-GE3 Vishay Siliconix sqd50n06.pdf Description: MOSFET N-CH 60V 50A TO252
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SQD50P04-09L-GE3 SQD50P04-09L-GE3 Vishay Siliconix sqd50p04.pdf Description: MOSFET P-CH 40V 50A TO252
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SQD50P04-13L-GE3 SQD50P04-13L-GE3 Vishay Siliconix sqd50p04-13l.pdf Description: MOSFET P-CH 40V 50A TO252
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SIR172DP-T1-GE3 sir172dp.pdf
SIR172DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Produkt ist nicht verfügbar
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SIR406DP-T1-GE3 SIR406DP.pdf
SIR406DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 10 V
Produkt ist nicht verfügbar
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SIR410DP-T1-GE3 sir410d.pdf
SIR410DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.72 EUR
Mindestbestellmenge: 3000
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SIR416DP-T1-GE3 sir416dp.pdf
SIR416DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
Produkt ist nicht verfügbar
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SIR418DP-T1-GE3 sir418dp.pdf
SIR418DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.87 EUR
6000+0.82 EUR
Mindestbestellmenge: 3000
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SIR422DP-T1-GE3 sir422dp.pdf
SIR422DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.77 EUR
6000+0.73 EUR
9000+0.72 EUR
Mindestbestellmenge: 3000
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SIR424DP-T1-GE3 sir424dp.pdf
SIR424DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Produkt ist nicht verfügbar
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SIR428DP-T1-GE3 sir428dp.pdf
SIR428DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V PPAK 8SOIC
Produkt ist nicht verfügbar
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SIR432DP-T1-GE3 sir432dp.pdf
SIR432DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28.4A PPAK SO-8
Produkt ist nicht verfügbar
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SIR436DP-T1-GE3 sir436dp.pdf
SIR436DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Produkt ist nicht verfügbar
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SIR460DP-T1-GE3 sir460dp.pdf
SIR460DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Produkt ist nicht verfügbar
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SIR484DP-T1-GE3 sir484dp.pdf
SIR484DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Produkt ist nicht verfügbar
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SIR494DP-T1-GE3 sir494dp.pdf
SIR494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 60A PPAK SO-8
Produkt ist nicht verfügbar
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SIR874DP-T1-GE3 sir874dp.pdf
SIR874DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 20A PPAK SO-8
Produkt ist nicht verfügbar
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SIS410DN-T1-GE3 sis410dn.pdf
SIS410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.68 EUR
6000+0.65 EUR
9000+0.63 EUR
Mindestbestellmenge: 3000
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SIS424DN-T1-GE3 sis424dn.pdf
SIS424DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19.6A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Produkt ist nicht verfügbar
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SIS430DN-T1-GE3 sis430dn.pdf
SIS430DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 12.5 V
Produkt ist nicht verfügbar
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SIS434DN-T1-GE3 sis434dn.pdf
SIS434DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
auf Bestellung 8986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.61 EUR
6000+0.59 EUR
Mindestbestellmenge: 3000
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SIS436DN-T1-GE3 sis436dn.pdf
SIS436DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Produkt ist nicht verfügbar
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SiS438DN-T1-GE3 sis438dn.pdf
SiS438DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 10 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.45 EUR
9000+0.43 EUR
15000+0.42 EUR
Mindestbestellmenge: 3000
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SIZ700DT-T1-GE3 siz700dt.pdf
SIZ700DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
Produkt ist nicht verfügbar
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SIZ704DT-T1-GE3 siz704dt.pdf
SIZ704DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.7 EUR
Mindestbestellmenge: 3000
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SIZ720DT-T1-GE3 siz720dt.pdf
SIZ720DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W, 48W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PowerPair™
Produkt ist nicht verfügbar
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SMMA511DJ-T1-GE3 smma511d.pdf
SMMA511DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 6.5W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar
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SMMB911DK-T1-GE3 SMMB911DK-T1-GE3.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6L Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6L Dual
Produkt ist nicht verfügbar
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SQ2308ES-T1-GE3 SQ2308ES.pdf
SQ2308ES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO236
Produkt ist nicht verfügbar
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SQ3442EV-T1-GE3 sq3442ev.pdf
SQ3442EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
Produkt ist nicht verfügbar
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SQ3456EV-T1-GE3 sq3456ev.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 6TSOP
Produkt ist nicht verfügbar
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SQ4401DY-T1-GE3 sq4401dy.pdf
SQ4401DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 15.8A 8SOIC
Produkt ist nicht verfügbar
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SQ4410EY-T1-GE3 sq4410ey.pdf
SQ4410EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SOIC
Produkt ist nicht verfügbar
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SQ4431EY-T1-GE3 sq4431ey.pdf
SQ4431EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.8A 8SOIC
Produkt ist nicht verfügbar
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SQ4470EY-T1-GE3 sq4470ey.pdf
SQ4470EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SOIC
Produkt ist nicht verfügbar
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SQ4840EY-T1-GE3 sq4840ey.pdf
SQ4840EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A 8SOIC
Produkt ist nicht verfügbar
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SQ4850EY-T1_GE3 sq4850ey.pdf
SQ4850EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.88 EUR
5000+0.84 EUR
12500+0.8 EUR
Mindestbestellmenge: 2500
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SQ4936EY-T1-GE3 sq4936ey.pdf
SQ4936EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7A 8SOIC
Produkt ist nicht verfügbar
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SQ4942EY-T1-GE3 sq4942ey.pdf
SQ4942EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Produkt ist nicht verfügbar
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SQ4946EY-T1-E3 sq4946ey0.pdf
SQ4946EY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ7002K-T1-GE3 SQ7002K.pdf
SQ7002K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 320MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
Produkt ist nicht verfügbar
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SQ7414EN-T1-E3 sq7414en.pdf
SQ7414EN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
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SQ7415EN-T1-E3 sq7415en.pdf
SQ7415EN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
Produkt ist nicht verfügbar
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SQ9945AEY-T1-E3 sq9945ae.pdf
SQ9945AEY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SQD15N06-42L-GE3 sqd15n06-42l.pdf
SQD15N06-42L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A TO252
Produkt ist nicht verfügbar
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SQD19P06-60L_GE3 sqd19p06.pdf
SQD19P06-60L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 20A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 19A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD23N06-31L-GE3 sqd23n06-31l.pdf
SQD23N06-31L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 23A TO252
Produkt ist nicht verfügbar
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SQD25N06-22L_GE3 sqd25n06-22l.pdf
SQD25N06-22L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Produkt ist nicht verfügbar
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SQD25N06-35L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 60V 25A TO252
Produkt ist nicht verfügbar
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SQD25N15-52_GE3 sqd25n15-52.pdf
SQD25N15-52_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+2.92 EUR
Mindestbestellmenge: 2000
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SQD35N05-26L-GE3 sqd35n05.pdf
SQD35N05-26L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD40N04-10A-GE3 sqd40n04.pdf
SQD40N04-10A-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V 42A TO252
Produkt ist nicht verfügbar
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SQD40N06-25L-GE3
SQD40N06-25L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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SQD40N10-25_GE3 sqd40n10-25.pdf
SQD40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQD45N05-20L-GE3 72974.pdf
SQD45N05-20L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Produkt ist nicht verfügbar
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SQD45P03-12_GE3 sqd45p03.pdf
SQD45P03-12_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.27 EUR
4000+1.2 EUR
Mindestbestellmenge: 2000
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SQD50N02-04-GE3 sqd50n02.pdf
SQD50N02-04-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 20V 50A TO252
Produkt ist nicht verfügbar
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SQD50N03-06P-GE3 sqd50n03.pdf
SQD50N03-06P-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
Produkt ist nicht verfügbar
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SQD50N03-09-GE3 sqd50n03.pdf
SQD50N03-09-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
Produkt ist nicht verfügbar
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SQD50N06-07L-GE3 sqd50n06.pdf
SQD50N06-07L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Produkt ist nicht verfügbar
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SQD50N06-09L-GE3 sqd50n06.pdf
SQD50N06-09L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A TO252
Produkt ist nicht verfügbar
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SQD50P04-09L-GE3 sqd50p04.pdf
SQD50P04-09L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Produkt ist nicht verfügbar
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SQD50P04-13L-GE3 sqd50p04-13l.pdf
SQD50P04-13L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Produkt ist nicht verfügbar
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