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SI7852DP-T1-GE3 SI7852DP-T1-GE3 si7852dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-13L_GE3 SQD50P04-13L_GE3 sqd50p04-13l.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQD50P04-09L_GE3 SQD50P04-09L_GE3 sqd50p04.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A TO252
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQJ469EP-T1_GE3 SQJ469EP-T1_GE3 sqj469ep.pdf Vishay Siliconix Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ469
auf Bestellung 2188 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7882 Stücke - Preis und Lieferfrist anzeigen
SQ4840EY-T1_GE3 SQ4840EY-T1_GE3 sq4840ey.pdf Vishay Siliconix Description: MOSFET N-CH 40V 20.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.1W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798581 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 40V 20.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.1W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798581 Stücke - Preis und Lieferfrist anzeigen
4+ 8.66 EUR
SUM50020EL-GE3 SUM50020EL-GE3 sum50020el.pdf Vishay Siliconix Description: MOSFET N-CH 60V 120A TO263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SUM50020
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 120A TO263
Base Part Number: SUM50020
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1094 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 1450 Stücke
Lieferzeit 21-28 Tag (e)
SUM70040E-GE3 SUM70040E-GE3 sum70040e.pdf Vishay Siliconix Description: MOSFET N-CH 100V 120A TO263
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Power Dissipation (Max): 375W (Tc)
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM40020E_GE3 SQM40020E_GE3 sqm40020e.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 sihh26n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3119 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 34 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3119 Stücke - Preis und Lieferfrist anzeigen
2+ 14.25 EUR
10+ 12.8 EUR
SQ2308CES-T1_GE3 SQ2308CES-T1_GE3 sq2308ces.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2.3A SOT23
Base Part Number: SQ2308
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22302 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 60V 2.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2308
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
auf Bestellung 34074 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22302 Stücke - Preis und Lieferfrist anzeigen
SI4403CDY-T1-GE3 SI4403CDY-T1-GE3 si4403cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 13.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
auf Bestellung 2484 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3318 Stücke - Preis und Lieferfrist anzeigen
SQD15N06-42L_GE3 SQD15N06-42L_GE3 sqd15n06-42l.pdf Vishay Siliconix Description: MOSFET N-CH 60V 15A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 60V 15A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 917 Stücke
Lieferzeit 21-28 Tag (e)
SQD30N05-20L_GE3 SQD30N05-20L_GE3 sqd30n05-20l.pdf Vishay Siliconix Description: MOSFET N-CH 55V 30A TO252AA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQD30
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
auf Bestellung 1097 Stücke
Lieferzeit 21-28 Tag (e)
SI1012CR-T1-GE3 SI1012CR-T1-GE3 si1012cr.pdf Vishay Siliconix Description: MOSFET N-CH 20V SC75A
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Power Dissipation (Max): 240mW (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 620 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21465 Stücke - Preis und Lieferfrist anzeigen
SI1317DL-T1-GE3 SI1317DL-T1-GE3 si1317dl.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.4A SOT323
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1317
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
auf Bestellung 6411 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8729 Stücke - Preis und Lieferfrist anzeigen
SI8472DB-T2-E1 SI8472DB-T2-E1 si8472db.pdf Vishay Siliconix Description: MOSFET N-CH 20V 4MICRO FOOT
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 780mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 3.3A MICRO
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 4-UFBGA
Supplier Device Package: 4-Micro Foot (1x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
auf Bestellung 8210 Stücke
Lieferzeit 21-28 Tag (e)
SQM110N05-06L_GE3 SQM110N05-06L_GE3 sqm110n0.pdf Vishay Siliconix Description: MOSFET N-CH 55V 110A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SIHP15N50E-GE3 SIHP15N50E-GE3 sihp15n50e.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14.5A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH14N60EF-T1-GE3 SIHH14N60EF-T1-GE3 sihh14n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 15A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1038 Stücke - Preis und Lieferfrist anzeigen
SIHH14N65E-T1-GE3 SIHH14N65E-T1-GE3 sihh14n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5961 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2926 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5961 Stücke - Preis und Lieferfrist anzeigen
SIHB15N50E-GE3 SIHB15N50E-GE3 sihb15n50e.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14.5A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP20N50E-GE3 SIHP20N50E-GE3 sihp20n50e.pdf Vishay Siliconix Description: MOSFET N-CH 500V 19A TO220AB
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP60030E-GE3 SUP60030E-GE3 sup60030e.pdf Vishay Siliconix Description: MOSFET N-CH 80V 120A TO220AB
Base Part Number: SUP60030
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: Vishay Siliconix
auf Bestellung 1490 Stücke
Lieferzeit 21-28 Tag (e)
SIHG20N50E-GE3 SIHG20N50E-GE3 sihg20n50e.pdf Vishay Siliconix Description: MOSFET N-CH 500V 19A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH21N65E-T1-GE3 SIHH21N65E-T1-GE3 sihh21n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH21
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH21
auf Bestellung 2888 Stücke
Lieferzeit 21-28 Tag (e)
SIHG33N65E-GE3 SIHG33N65E-GE3 sihg33n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 32.4A TO247AC
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 100V
Power Dissipation (Max): 313W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Manufacturer: Vishay Siliconix
Base Part Number: SIHG33
auf Bestellung 843 Stücke
Lieferzeit 21-28 Tag (e)
SIHG28N60EF-GE3 SIHG28N60EF-GE3 sihg28n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHS90N65E-E3 sihs90n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 87A SUPER247
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SUPER-247™ (TO-274AA)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625W
Input Capacitance (Ciss) (Max) @ Vds: 11826pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 591nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 29 mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drain to Source Voltage (Vdss): 650V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2308CES-T1-GE3 SQ2308CES-T1-GE3 sq2308ces.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2.3A TO236
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1490 Stücke - Preis und Lieferfrist anzeigen
SIS612EDNT-T1-GE3 sis612ednt.pdf Vishay Siliconix Description: MOSFET N-CH 20V 50A SMT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
Power - Max: 52W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3427AEEV-T1_GE3 SQ3427AEEV-T1_GE3 sq3427aeev.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.3A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
Power Dissipation (Max): 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SQ3427
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 12854 Stücke - Preis und Lieferfrist anzeigen
SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 sq2362es.pdf Vishay Siliconix Description: MOSFET N-CH 60V 4.3A SOT23-3
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 47045 Stücke - Preis und Lieferfrist anzeigen
SQS840EN-T1_GE3 sqs840en.pdf Vishay Siliconix Description: MOSFET N-CH 40V 16A TO263
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 33W
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ7414AEN-T1-GE3 sq7414aen.pdf Vishay Siliconix Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 62W
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD30N05-20L_GE3 SQD30N05-20L_GE3 sqd30n05-20l.pdf Vishay Siliconix Description: MOSFET N-CH 55V 30A TO252AA
Base Part Number: SQD30
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1097 Stücke - Preis und Lieferfrist anzeigen
SQD50N04-5M6_GE3 SQD50N04-5M6_GE3 sqd50n04-5m6.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A TO-252
Base Part Number: SQD50N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 71W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
SQD97N06-6M3L_GE3 SQD97N06-6M3L_GE3 sqd97n06-6m3l.pdf Vishay Siliconix Description: MOSFET N-CH 60V 97A TO252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM100N04-2M7-GE3 sqm100n04-2m7.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO-263
Power - Max: 157W
Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM100N10-10_GE3 SQM100N10-10_GE3 sqm100n1.pdf Vishay Siliconix Description: MOSFET N-CH 100V 100A TO-263
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Base Part Number: SQM100N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 908 Stücke - Preis und Lieferfrist anzeigen
SQM120N04-1M7_GE3 SQM120N04-1M7_GE3 sqm120n04-1m7.pdf Vishay Siliconix Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120P06-07L_GE3 SQM120P06-07L_GE3 sqm120p06-07l.pdf Vishay Siliconix Description: MOSFET P-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14280pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Vishay Siliconix
Base Part Number: SQM120P
auf Bestellung 16800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18673 Stücke - Preis und Lieferfrist anzeigen
SQV120N10-3M8_GE3 SQV120N10-3M8_GE3 sqv120n10-3m8.pdf Vishay Siliconix Description: MOSFET N-CH 100V 120A TO262-3
Base Part Number: SQV120
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7230pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 362 Stücke
Lieferzeit 21-28 Tag (e)
SQM120P04-04L_GE3 SQM120P04-04L_GE3 sqm120p0.pdf Vishay Siliconix Description: MOSFET P-CH 40V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1366 Stücke - Preis und Lieferfrist anzeigen
SIHG70N60EF-GE3 SIHG70N60EF-GE3 sihg70n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 70A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD5N50D-GE3 SIHD5N50D-GE3 sihd5n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5.3A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 2180 Stücke
Lieferzeit 21-28 Tag (e)
SI7655DN-T1-GE3 SI7655DN-T1-GE3 si7655dn.pdf Vishay Siliconix Description: MOSFET P-CH 20V 40A PPAK 1212
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
auf Bestellung 5240 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4096 Stücke - Preis und Lieferfrist anzeigen
SI4425DDY-T1-GE3 SI4425DDY-T1-GE3 si4425ddy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 19.7A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
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Lieferzeit 21-28 Tag (e)
SI4463CDY-T1-GE3 SI4463CDY-T1-GE3 si4463cd.pdf Vishay Siliconix Description: MOSFET P-CHAN 2.5V SO8
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4463
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 7904 Stücke
Lieferzeit 21-28 Tag (e)
SI4825DY-T1-GE3 SI4825DY-T1-GE3 si4825dy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 8.1A 8-SOIC
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB68EP-T1_GE3 SQJB68EP-T1_GE3 sqjb68ep.pdf Vishay Siliconix Description: MOSFET 2 N-CH 100V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 411 Stücke - Preis und Lieferfrist anzeigen
SISHA14DN-T1-GE3 SISHA14DN-T1-GE3 sisha14dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V PP 1212-8
Base Part Number: SISHA1
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5786 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V PP 1212-8
Base Part Number: SISHA1
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
DG419DY-T1-E3 DG419DY-T1-E3 dg417.pdf Vishay Siliconix Description: IC ANALOG SWITCH CMOS 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 351 Stücke
Lieferzeit 21-28 Tag (e)
SI2301BDS-T1-E3 SI2301BDS-T1-E3 si2301bds.pdf Vishay Siliconix Description: MOSFET P-CH 20V 2.2A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
auf Bestellung 6027 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16300 Stücke - Preis und Lieferfrist anzeigen
SI2301CDS-T1-E3 SI2301CDS-T1-E3 si2301cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.1A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 3648 Stücke
Lieferzeit 21-28 Tag (e)
SIHB17N80E-GE3 SIHB17N80E-GE3 sihb17n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 15A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2517EDN-T1-GE4 DG2517EDN-T1-GE4 dg2517.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 10DFN
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 2
Part Status: Active
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1308 Stücke - Preis und Lieferfrist anzeigen
SI7461DP-T1-E3 SI7461DP-T1-E3 si7461dp.pdf Vishay Siliconix Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
auf Bestellung 13880 Stücke
Lieferzeit 21-28 Tag (e)
SISF00DN-T1-GE3 SISF00DN-T1-GE3 sisf00dn.pdf Vishay Siliconix Description: MOSFET DUAL N-CH 30V POWERPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4855 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI4925BDY-T1-E3 SI4925BDY-T1-E3 72001.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 5.3A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4925
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Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
SISS12DN-T1-GE3 SISS12DN-T1-GE3 siss12dn.pdf Vishay Siliconix Description: MOSFET N-CH 40V 37.5A/60A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Package / Case: PowerPAK® 1212-8S
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5690 Stücke - Preis und Lieferfrist anzeigen
SUM90P10-19L-E3 SUM90P10-19L-E3 sum90p10.pdf Vishay Siliconix Description: MOSFET P-CH 100V 90A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Part Status: Active
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUM90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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Lieferzeit 21-28 Tag (e)
IRF820STRRPBF IRF820STRRPBF sihf820s.pdf Vishay Siliconix Description: MOSFET N-CH 500V 2.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
6+ 4.71 EUR
10+ 4.24 EUR
100+ 3.4 EUR
SQJ431EP-T2_GE3 SQJ431EP.pdf Vishay Siliconix Description: MOSFET P-CH 200V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC474ED-T1-GE3 SIC474ED-T1-GE3 SiC47x_Jul04_2018.pdf Vishay Siliconix Description: IC REG BUCK ADJ 3A MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 50.6V
Current - Output: 3A
Frequency - Switching: 20kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC474
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auf Bestellung 2980 Stücke - Preis und Lieferfrist anzeigen
SIA485DJ-T1-GE3 SIA485DJ-T1-GE3 sia485dj.pdf Vishay Siliconix Description: MOSFET P-CH 150V 1.6A PPAK SC70
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 75V
Power Dissipation (Max): 15.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA485
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2965 Stücke - Preis und Lieferfrist anzeigen
SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 sihj6n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 5.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHJ7N65E-T1-GE3 SIHJ7N65E-T1-GE3 sihj7n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHJ7
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Vishay Siliconix Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Base Part Number: SIHJ7
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
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Lieferzeit 21-28 Tag (e)
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SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 sihj6n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 5.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 sihj8n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 8A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1539DDL-T1-GE3 SI1539DDL-T1-GE3 si1539ddl.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 21pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3440ADV-T1-GE3 SI3440ADV-T1-GE3 si3440adv.pdf Vishay Siliconix Description: MOSFET N-CH 150V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 75V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3440
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Vishay Siliconix Description: MOSFET N-CH 150V 2.2A 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 75V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3440
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Lieferzeit 21-28 Tag (e)
auf Bestellung 7441 Stücke - Preis und Lieferfrist anzeigen
IRF530STRLPBF IRF530STRLPBF sihf530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 4152 Stücke - Preis und Lieferfrist anzeigen
800+ 2.61 EUR
1600+ 2.24 EUR
SI4800BDY-T1-E3 SI4800BDY-T1-E3 si4800bd.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 30V 6.5A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4800
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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SIHF12N65E-GE3 SIHF12N65E-GE3 sihf12n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Part Status: Active
Supplier Device Package: TO-220 Full Pack
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 33W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF530SPBF IRF530SPBF sihf530s.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 100V 14A TO263
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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IRFZ44STRLPBF IRFZ44STRLPBF 91293.pdf Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ24SPBF IRFZ24SPBF sihfz24.pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A TO263
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
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5+ 6.32 EUR
10+ 5.66 EUR
100+ 4.55 EUR
500+ 3.73 EUR
1000+ 3.2 EUR
IRFZ24PBF IRFZ24PBF sihfz24.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 60V 17A TO220AB
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG039N60EF-GE3 SIHG039N60EF-GE3 sihg039n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 61A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4323 pF @ 100 V
auf Bestellung 363 Stücke
Lieferzeit 21-28 Tag (e)
1+ 31.62 EUR
10+ 28.57 EUR
100+ 23.65 EUR
SIHP38N60E-GE3 SIHP38N60E-GE3 sihp38n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 43A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
2+ 16.8 EUR
10+ 15.18 EUR
SI7852DP-T1-GE3 si7852dp.pdf
SI7852DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.9W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD50P04-13L_GE3 sqd50p04-13l.pdf
SQD50P04-13L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5386 Stücke - Preis und Lieferfrist anzeigen
SQD50P04-09L_GE3 sqd50p04.pdf
SQD50P04-09L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO252
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2036 Stücke - Preis und Lieferfrist anzeigen
SQJ469EP-T1_GE3 sqj469ep.pdf
SQJ469EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 32A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 40V
Power Dissipation (Max): 100W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SQJ469
auf Bestellung 2188 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7882 Stücke - Preis und Lieferfrist anzeigen
SQ4840EY-T1_GE3 sq4840ey.pdf
SQ4840EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.1W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 798586 Stücke - Preis und Lieferfrist anzeigen
SQ4840EY-T1_GE3 sq4840ey.pdf
SQ4840EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.1W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 798581 Stücke - Preis und Lieferfrist anzeigen
4+ 8.66 EUR
SUM50020EL-GE3 sum50020el.pdf
SUM50020EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SUM50020
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2544 Stücke - Preis und Lieferfrist anzeigen
SUM50020EL-GE3 sum50020el.pdf
SUM50020EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Base Part Number: SUM50020
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1094 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2250 Stücke - Preis und Lieferfrist anzeigen
SUM50020EL-GE3 sum50020el.pdf
SUM50020EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 1450 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1894 Stücke - Preis und Lieferfrist anzeigen
SUM70040E-GE3 sum70040e.pdf
SUM70040E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Power Dissipation (Max): 375W (Tc)
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM40020E_GE3 sqm40020e.pdf
SQM40020E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH26N60E-T1-GE3 sihh26n60e.pdf
SIHH26N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3153 Stücke - Preis und Lieferfrist anzeigen
SIHH26N60E-T1-GE3 sihh26n60e.pdf
SIHH26N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2815 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 34 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3119 Stücke - Preis und Lieferfrist anzeigen
2+ 14.25 EUR
10+ 12.8 EUR
SQ2308CES-T1_GE3 sq2308ces.pdf
SQ2308CES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23
Base Part Number: SQ2308
Package / Case: TO-236-3, SC-59, SOT-23-3
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
auf Bestellung 30000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 56376 Stücke - Preis und Lieferfrist anzeigen
SQ2308CES-T1_GE3 sq2308ces.pdf
SQ2308CES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2308
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
auf Bestellung 34074 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 52302 Stücke - Preis und Lieferfrist anzeigen
SI4403CDY-T1-GE3 si4403cd.pdf
SI4403CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4403
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
auf Bestellung 2484 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3318 Stücke - Preis und Lieferfrist anzeigen
SQD15N06-42L_GE3 sqd15n06-42l.pdf
SQD15N06-42L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 917 Stücke - Preis und Lieferfrist anzeigen
SQD15N06-42L_GE3 sqd15n06-42l.pdf
SQD15N06-42L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 37W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
auf Bestellung 917 Stücke
Lieferzeit 21-28 Tag (e)
SQD30N05-20L_GE3 sqd30n05-20l.pdf
SQD30N05-20L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252AA
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQD30
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
auf Bestellung 1097 Stücke
Lieferzeit 21-28 Tag (e)
SI1012CR-T1-GE3 si1012cr.pdf
SI1012CR-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC75A
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Power Dissipation (Max): 240mW (Ta)
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 630mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 620 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21465 Stücke - Preis und Lieferfrist anzeigen
SI1317DL-T1-GE3 si1317dl.pdf
SI1317DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SOT323
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1317
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
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SI8472DB-T2-E1 si8472db.pdf
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4MICRO FOOT
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-MICRO FOOT® (1x1)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 780mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI8472DB-T2-E1 si8472db.pdf
SI8472DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.3A MICRO
Rds On (Max) @ Id, Vgs: 44mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 4-UFBGA
Supplier Device Package: 4-Micro Foot (1x1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 900mV @ 250µA
auf Bestellung 8210 Stücke
Lieferzeit 21-28 Tag (e)
SQM110N05-06L_GE3 sqm110n0.pdf
SQM110N05-06L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 110A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SIHP15N50E-GE3 sihp15n50e.pdf
SIHP15N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14.5A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH14N60EF-T1-GE3 sihh14n60ef.pdf
SIHH14N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 15A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1449 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 266mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHH14N65E-T1-GE3 sihh14n65e.pdf
SIHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHH14N65E-T1-GE3 sihh14n65e.pdf
SIHH14N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1712 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
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SIHB15N50E-GE3 sihb15n50e.pdf
SIHB15N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 14.5A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1162 pF @ 100 V
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP20N50E-GE3 sihp20n50e.pdf
SIHP20N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO220AB
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUP60030E-GE3 sup60030e.pdf
SUP60030E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 120A TO220AB
Base Part Number: SUP60030
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 141nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
SIHG20N50E-GE3 sihg20n50e.pdf
SIHG20N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 19A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH21N65E-T1-GE3 sihh21n65e.pdf
SIHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH21
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHH21N65E-T1-GE3 sihh21n65e.pdf
SIHH21N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 20.3A PWRPAK8X8
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2404pF @ 100V
Power Dissipation (Max): 156W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 8 x 8
Package / Case: 8-PowerTDFN
Base Part Number: SIHH21
auf Bestellung 2888 Stücke
Lieferzeit 21-28 Tag (e)
SIHG33N65E-GE3 sihg33n65e.pdf
SIHG33N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 32.4A TO247AC
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 32.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 100V
Power Dissipation (Max): 313W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3
Manufacturer: Vishay Siliconix
Base Part Number: SIHG33
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Lieferzeit 21-28 Tag (e)
SIHG28N60EF-GE3 sihg28n60ef.pdf
SIHG28N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 28A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHS90N65E-E3 sihs90n65e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 87A SUPER247
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: SUPER-247™ (TO-274AA)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 625W
Input Capacitance (Ciss) (Max) @ Vds: 11826pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 591nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 29 mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drain to Source Voltage (Vdss): 650V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ2308CES-T1-GE3 sq2308ces.pdf
SQ2308CES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A TO236
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Supplier Device Package: SOT-23 (TO-236AB)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1490 Stücke - Preis und Lieferfrist anzeigen
SIS612EDNT-T1-GE3 sis612ednt.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A SMT
FET Type: MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 10V
Power - Max: 52W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3427AEEV-T1_GE3 sq3427aeev.pdf
SQ3427AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.3A 6TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V
Power Dissipation (Max): 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SQ3427
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQ2362ES-T1_GE3 sq2362es.pdf
SQ2362ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.3A SOT23-3
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 47045 Stücke - Preis und Lieferfrist anzeigen
SQS840EN-T1_GE3 sqs840en.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A TO263
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 33W
Input Capacitance (Ciss) (Max) @ Vds: 1031pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ7414AEN-T1-GE3 sq7414aen.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Rds On (Max) @ Id, Vgs: 26 mOhm @ 5.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 62W
Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD30N05-20L_GE3 sqd30n05-20l.pdf
SQD30N05-20L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252AA
Base Part Number: SQD30
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1097 Stücke - Preis und Lieferfrist anzeigen
SQD50N04-5M6_GE3 sqd50n04-5m6.pdf
SQD50N04-5M6_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO-252
Base Part Number: SQD50N
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 71W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2000 Stücke - Preis und Lieferfrist anzeigen
SQD97N06-6M3L_GE3 sqd97n06-6m3l.pdf
SQD97N06-6M3L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 97A TO252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM100N04-2M7-GE3 sqm100n04-2m7.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO-263
Power - Max: 157W
Input Capacitance (Ciss) (Max) @ Vds: 7910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: MOSFET N-Channel, Metal Oxide
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM100N10-10_GE3 sqm100n1.pdf
SQM100N10-10_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 100A TO-263
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Base Part Number: SQM100N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 908 Stücke - Preis und Lieferfrist anzeigen
SQM120N04-1M7_GE3 sqm120n04-1m7.pdf
SQM120N04-1M7_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17350 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120P06-07L_GE3 sqm120p06-07l.pdf
SQM120P06-07L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 14280pF @ 25V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Vishay Siliconix
Base Part Number: SQM120P
auf Bestellung 16800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18673 Stücke - Preis und Lieferfrist anzeigen
SQV120N10-3M8_GE3 sqv120n10-3m8.pdf
SQV120N10-3M8_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO262-3
Base Part Number: SQV120
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7230pF @ 25V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 362 Stücke
Lieferzeit 21-28 Tag (e)
SQM120P04-04L_GE3 sqm120p0.pdf
SQM120P04-04L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1366 Stücke - Preis und Lieferfrist anzeigen
SIHG70N60EF-GE3 sihg70n60ef.pdf
SIHG70N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 70A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD5N50D-GE3 sihd5n50d.pdf
SIHD5N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 2180 Stücke
Lieferzeit 21-28 Tag (e)
SI7655DN-T1-GE3 si7655dn.pdf
SI7655DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK 1212
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
auf Bestellung 5240 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4096 Stücke - Preis und Lieferfrist anzeigen
SI4425DDY-T1-GE3 si4425ddy.pdf
SI4425DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.7A 8-SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
auf Bestellung 11736 Stücke
Lieferzeit 21-28 Tag (e)
SI4463CDY-T1-GE3 si4463cd.pdf
SI4463CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 2.5V SO8
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4250pF @ 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4463
Package / Case: 8-SOIC (0.154", 3.90mm Width)
auf Bestellung 7904 Stücke
Lieferzeit 21-28 Tag (e)
SI4825DY-T1-GE3 si4825dy.pdf
SI4825DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.1A 8-SOIC
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB68EP-T1_GE3 sqjb68ep.pdf
SQJB68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 100V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 411 Stücke - Preis und Lieferfrist anzeigen
SISHA14DN-T1-GE3 sisha14dn.pdf
SISHA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V PP 1212-8
Base Part Number: SISHA1
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 5786 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SISHA14DN-T1-GE3 sisha14dn.pdf
SISHA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V PP 1212-8
Base Part Number: SISHA1
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 20A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5786 Stücke - Preis und Lieferfrist anzeigen
DG419DY-T1-E3 dg417.pdf
DG419DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH CMOS 8SOIC
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 351 Stücke
Lieferzeit 21-28 Tag (e)
SI2301BDS-T1-E3 si2301bds.pdf
SI2301BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.2A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
auf Bestellung 6027 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16300 Stücke - Preis und Lieferfrist anzeigen
SI2301CDS-T1-E3 si2301cd.pdf
SI2301CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.1A SOT23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 3648 Stücke
Lieferzeit 21-28 Tag (e)
SIHB17N80E-GE3 sihb17n80e.pdf
SIHB17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2517EDN-T1-GE4 dg2517.pdf
DG2517EDN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10DFN
Package / Case: 10-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 2
Part Status: Active
-3db Bandwidth: 221MHz
On-State Resistance (Max): 3.1Ohm
Switch Time (Ton, Toff) (Max): 40ns, 33ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 1MHz
Charge Injection: -19.4pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-DFN (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7461DP-T1-E3 si7461dp.pdf
SI7461DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
auf Bestellung 13880 Stücke
Lieferzeit 21-28 Tag (e)
SISF00DN-T1-GE3 sisf00dn.pdf
SISF00DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 30V POWERPAK 12
Supplier Device Package: PowerPAK® 1212-8SCD
Package / Case: PowerPAK® 1212-8SCD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 4855 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI4925BDY-T1-E3 72001.pdf
SI4925BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 5.3A 8-SOIC
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4925
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Lieferzeit 21-28 Tag (e)
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
SISS12DN-T1-GE3 siss12dn.pdf
SISS12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.5A/60A PPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Package / Case: PowerPAK® 1212-8S
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5690 Stücke - Preis und Lieferfrist anzeigen
SUM90P10-19L-E3 sum90p10.pdf
SUM90P10-19L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 90A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Part Status: Active
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SUM90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 326nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 427 Stücke
Lieferzeit 21-28 Tag (e)
IRF820STRRPBF sihf820s.pdf
IRF820STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 2.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
auf Bestellung 796 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
6+ 4.71 EUR
10+ 4.24 EUR
100+ 3.4 EUR
SQJ431EP-T2_GE3 SQJ431EP.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC474ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC474ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Function: Step-Down
Output Configuration: Positive
Topology: Buck
Output Type: Adjustable
Number of Outputs: 1
Voltage - Input (Min): 4.5V
Voltage - Input (Max): 55V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Output (Max): 50.6V
Current - Output: 3A
Frequency - Switching: 20kHz ~ 2MHz
Synchronous Rectifier: Yes
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-27
Supplier Device Package: PowerPAK® MLP55-27
Base Part Number: SIC474
auf Bestellung 2970 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2980 Stücke - Preis und Lieferfrist anzeigen
SIA485DJ-T1-GE3 sia485dj.pdf
SIA485DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.6A PPAK SC70
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 75V
Power Dissipation (Max): 15.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA485
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2965 Stücke - Preis und Lieferfrist anzeigen
SIHJ6N65E-T1-GE3 sihj6n65e.pdf
SIHJ6N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 5.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHJ7N65E-T1-GE3 sihj7n65e.pdf
SIHJ7N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SIHJ7
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
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SIHJ7N65E-T1-GE3 sihj7n65e.pdf
SIHJ7N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Base Part Number: SIHJ7
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 598mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
auf Bestellung 3022 Stücke
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SIHJ6N65E-T1-GE3 sihj6n65e.pdf
SIHJ6N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 5.6A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 868mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 596 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHJ8N60E-T1-GE3 sihj8n60e.pdf
SIHJ8N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8A PPAK SO-8
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33 Stücke - Preis und Lieferfrist anzeigen
SI1539DDL-T1-GE3 si1539ddl.pdf
SI1539DDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc), 460mA (Tc)
Rds On (Max) @ Id, Vgs: 388mOhm @ 600mA, 10V, 1.07Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 15V, 21pF @ 15V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3440ADV-T1-GE3 si3440adv.pdf
SI3440ADV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 75V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3440
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Lieferzeit 21-28 Tag (e)
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SI3440ADV-T1-GE3 si3440adv.pdf
SI3440ADV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A 6TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 75V
Power Dissipation (Max): 3.6W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3440
auf Bestellung 6867 Stücke
Lieferzeit 21-28 Tag (e)
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IRF530STRLPBF sihf530s.pdf
IRF530STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4152 Stücke - Preis und Lieferfrist anzeigen
800+ 2.61 EUR
1600+ 2.24 EUR
SI4800BDY-T1-E3 техническая информация si4800bd.pdf
SI4800BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A 8-SOIC
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4800
Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Lieferzeit 21-28 Tag (e)
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SIHF12N65E-GE3 sihf12n65e.pdf
SIHF12N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Part Status: Active
Supplier Device Package: TO-220 Full Pack
FET Type: N-Channel
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 33W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF530SPBF техническая информация sihf530s.pdf
IRF530SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO263
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90 Stücke - Preis und Lieferfrist anzeigen
IRFZ44STRLPBF 91293.pdf
IRFZ44STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFZ24SPBF sihfz24.pdf
IRFZ24SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO263
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
auf Bestellung 1369 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
5+ 6.32 EUR
10+ 5.66 EUR
100+ 4.55 EUR
500+ 3.73 EUR
1000+ 3.2 EUR
IRFZ24PBF техническая информация sihfz24.pdf
IRFZ24PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG039N60EF-GE3 sihg039n60ef.pdf
SIHG039N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 61A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4323 pF @ 100 V
auf Bestellung 363 Stücke
Lieferzeit 21-28 Tag (e)
1+ 31.62 EUR
10+ 28.57 EUR
100+ 23.65 EUR
SIHP38N60E-GE3 sihp38n60e.pdf
SIHP38N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 43A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 21 Stücke
Lieferzeit 21-28 Tag (e)
2+ 16.8 EUR
10+ 15.18 EUR
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