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SIP4282ADVP-3-E3 SIP4282ADVP-3-E3 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Rds On (Typ): 350mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: PowerPAK® SC-75-6L
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PowerPAK® SC-75-6L
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Produkt ist nicht verfügbar
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SIP4282DVP-3-T1-E3 SIP4282DVP-3-T1-E3 Vishay Siliconix sip4282.pdf Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Active
Produkt ist nicht verfügbar
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SIP43101DLP-T1-E3 Vishay Siliconix 72640.pdf Description: IC PWR SWITCH BIPOLAR 1:1 44MLP
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP44-16
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Inverting, Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: PowerPAK® MLP44-16
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP43101DQ-T1-E3 SIP43101DQ-T1-E3 Vishay Siliconix 72640.pdf Description: IC PWR SWTCH BIPOLAR 1:1 16TSSOP
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Supplier Device Package: 16-TSSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Inverting, Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP43102DLP-T1-E3 Vishay Siliconix sip43102.pdf Description: IC PWR SWITCH BIPOLAR 1:1 44MLP
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP44-16
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: PowerPAK® MLP44-16
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP43102DQ-T1-E3 SIP43102DQ-T1-E3 Vishay Siliconix sip43102.pdf Description: IC PWR SWTCH BIPOLAR 1:1 16TSSOP
Supplier Device Package: 16-TSSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP4610ADT-T1-E3 SIP4610ADT-T1-E3 Vishay Siliconix SIP4610A%2CB.pdf Description: IC PWR SWTCH P-CHAN 1:1 TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 145mOhm
Input Type: Non-Inverting
Voltage - Load: 2.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4610BDT-T1-E3 SIP4610BDT-T1-E3 Vishay Siliconix SIP4610A%2CB.pdf Description: IC PWR SWTCH P-CHAN 1:1 TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 145mOhm
Input Type: Non-Inverting
Voltage - Load: 2.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4612ADVP-T1-E3 Vishay Siliconix sip4612.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: PowerPAK® TSC-75-6
Packaging: Tape & Reel (TR)
Voltage - Load: 2.4V ~ 5.5V
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: PowerPAK® TSC75-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Produkt ist nicht verfügbar
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SIP4613ADVP-T1-E3 Vishay Siliconix sip4613.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: PowerPAK® TSC75-6
Ratio - Input:Output: 1:1
Mounting Type: Surface Mount
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.4V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Output Type: P-Channel
Package / Case: PowerPAK® TSC-75-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP4613BDVP-T1-E3 Vishay Siliconix sip4613.pdf Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: PowerPAK® TSC75-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.4V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: PowerPAK® TSC-75-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP5628CS-TR-E3 Vishay Siliconix SIP56xx_Family.pdf Description: IC SCSI 14-LINE TERM
Part Status: Obsolete
Number of Terminations: 14
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Packaging: Tray
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SIP5630CG-T1-E3 Vishay Siliconix SIP56xx_Family.pdf Description: IC SCSI 14-LINE TERM 36-QSOP
Part Status: Obsolete
Supplier Device Package: 36-QSOP
Number of Terminations: 9
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP5638CS-TR-E3 SIP5638CS-TR-E3 Vishay Siliconix SIP56xx_Family.pdf Description: IC SCSI 14-LINE TERM SQFP
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: 48-SQFP (7x7)
Number of Terminations: 15
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Produkt ist nicht verfügbar
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SIP5668CS-TR-E3 SIP5668CS-TR-E3 Vishay Siliconix SIP56xx_Family.pdf Description: IC SCSI 14-LINE TERM SQFP
Part Status: Obsolete
Supplier Device Package: 48-SQFP (7x7)
Number of Terminations: 14
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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SIP5670CG-T1-E3 Vishay Siliconix SIP56xx_Family.pdf Description: IC SCSI 9-LINE TERM 36-QSOP
Part Status: Active
Supplier Device Package: 36-QSOP
Number of Terminations: 9
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP5678CS-TR-E3 SIP5678CS-TR-E3 Vishay Siliconix SIP56xx_Family.pdf Description: IC SCSI 15-LINE TERM SQFP
Part Status: Obsolete
Supplier Device Package: 48-SQFP (7x7)
Number of Terminations: 15
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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SIR168DP-T1-GE3 SIR168DP-T1-GE3 Vishay Siliconix 65039.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Produkt ist nicht verfügbar
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SIR172DP-T1-GE3 SIR172DP-T1-GE3 Vishay Siliconix sir172dp.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIR406DP-T1-GE3 SIR406DP-T1-GE3 Vishay Siliconix SIR406DP.pdf Description: MOSFET N-CH 25V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIR410DP-T1-GE3 SIR410DP-T1-GE3 Vishay Siliconix sir410d.pdf Description: MOSFET N-CH 20V 35A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.86 EUR
Mindestbestellmenge: 3000 Stücke
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SIR416DP-T1-GE3 SIR416DP-T1-GE3 Vishay Siliconix sir416dp.pdf Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
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SIR418DP-T1-GE3 SIR418DP-T1-GE3 Vishay Siliconix sir418dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
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3000+0.93 EUR
6000+0.87 EUR
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SIR422DP-T1-GE3 SIR422DP-T1-GE3 Vishay Siliconix sir422dp.pdf Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
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SIR424DP-T1-GE3 SIR424DP-T1-GE3 Vishay Siliconix sir424dp.pdf Description: MOSFET N-CH 20V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
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SIR428DP-T1-GE3 SIR428DP-T1-GE3 Vishay Siliconix sir428dp.pdf Description: MOSFET N-CH D-S 30V PPAK 8SOIC
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SIR432DP-T1-GE3 SIR432DP-T1-GE3 Vishay Siliconix sir432dp.pdf Description: MOSFET N-CH 100V 28.4A PPAK SO-8
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SIR436DP-T1-GE3 SIR436DP-T1-GE3 Vishay Siliconix sir436dp.pdf Description: MOSFET N-CH 25V 40A PPAK SO-8
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SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix sir460dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIR484DP-T1-GE3 SIR484DP-T1-GE3 Vishay Siliconix sir484dp.pdf Description: MOSFET N-CH 20V 20A PPAK SO-8
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SIR494DP-T1-GE3 SIR494DP-T1-GE3 Vishay Siliconix sir494dp.pdf Description: MOSFET N-CH 12V 60A PPAK SO-8
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SIR874DP-T1-GE3 SIR874DP-T1-GE3 Vishay Siliconix sir874dp.pdf Description: MOSFET N-CH 25V 20A PPAK SO-8
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SIS410DN-T1-GE3 SIS410DN-T1-GE3 Vishay Siliconix sis410dn.pdf Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
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SIS424DN-T1-GE3 SIS424DN-T1-GE3 Vishay Siliconix sis424dn.pdf Description: MOSFET N-CH 20V 35A PPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIS430DN-T1-GE3 SIS430DN-T1-GE3 Vishay Siliconix sis430dn.pdf Description: MOSFET N-CH 25V 35A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIS434DN-T1-GE3 SIS434DN-T1-GE3 Vishay Siliconix sis434dn.pdf Description: MOSFET N-CH 40V 35A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
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SIS436DN-T1-GE3 SIS436DN-T1-GE3 Vishay Siliconix sis436dn.pdf Description: MOSFET N-CH 25V 16A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
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SiS438DN-T1-GE3 SiS438DN-T1-GE3 Vishay Siliconix sis438dn.pdf Description: MOSFET N-CH 20V 16A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 10 V
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SIZ700DT-T1-GE3 SIZ700DT-T1-GE3 Vishay Siliconix siz700dt.pdf Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
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SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 Vishay Siliconix siz704dt.pdf Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 20W, 30W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
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SIZ720DT-T1-GE3 SIZ720DT-T1-GE3 Vishay Siliconix siz720dt.pdf Description: MOSFET 2N-CH 20V 16A 6POWERPAIR
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
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SMMA511DJ-T1-GE3 SMMA511DJ-T1-GE3 Vishay Siliconix smma511d.pdf Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 6.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
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SMMB911DK-T1-GE3 Vishay Siliconix SMMB911DK-T1-GE3.pdf Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Supplier Device Package: PowerPAK® SC-75-6L Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Packaging: Tape & Reel (TR)
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SQ2308ES-T1-GE3 SQ2308ES-T1-GE3 Vishay Siliconix SQ2308ES.pdf Description: MOSFET N-CH D-S 60V TO236
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SQ3442EV-T1-GE3 SQ3442EV-T1-GE3 Vishay Siliconix sq3442ev.pdf Description: MOSFET N-CH 20V 4.3A 6TSOP
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SQ3456EV-T1-GE3 Vishay Siliconix sq3456ev.pdf Description: MOSFET N-CH D-S 30V 6TSOP
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SQ4401DY-T1-GE3 SQ4401DY-T1-GE3 Vishay Siliconix sq4401dy.pdf Description: MOSFET P-CH 40V 15.8A 8SOIC
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SQ4410EY-T1-GE3 SQ4410EY-T1-GE3 Vishay Siliconix sq4410ey.pdf Description: MOSFET N-CH 30V 15A 8SOIC
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SQ4431EY-T1-GE3 SQ4431EY-T1-GE3 Vishay Siliconix sq4431ey.pdf Description: MOSFET P-CH 30V 10.8A 8SOIC
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SQ4470EY-T1-GE3 SQ4470EY-T1-GE3 Vishay Siliconix sq4470ey.pdf Description: MOSFET N-CH 60V 16A 8SOIC
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SQ4840EY-T1-GE3 SQ4840EY-T1-GE3 Vishay Siliconix sq4840ey.pdf Description: MOSFET N-CH 40V 20.7A 8SOIC
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SQ4850EY-T1_GE3 SQ4850EY-T1_GE3 Vishay Siliconix sq4850ey.pdf Description: MOSFET N-CH 60V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
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SQ4936EY-T1-GE3 SQ4936EY-T1-GE3 Vishay Siliconix sq4936ey.pdf Description: MOSFET 2N-CH 30V 7A 8SOIC
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SQ4942EY-T1-GE3 SQ4942EY-T1-GE3 Vishay Siliconix sq4942ey.pdf Description: MOSFET 2N-CH 40V 8A 8SOIC
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SQ4946EY-T1-E3 SQ4946EY-T1-E3 Vishay Siliconix sq4946ey0.pdf Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SQ7002K-T1-GE3 SQ7002K-T1-GE3 Vishay Siliconix SQ7002K.pdf Description: MOSFET N-CH 60V 320MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SQ7414EN-T1-E3 SQ7414EN-T1-E3 Vishay Siliconix sq7414en.pdf Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
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SQ7415EN-T1-E3 SQ7415EN-T1-E3 Vishay Siliconix sq7415en.pdf Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
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SQ9945AEY-T1-E3 SQ9945AEY-T1-E3 Vishay Siliconix sq9945ae.pdf Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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SQD15N06-42L-GE3 SQD15N06-42L-GE3 Vishay Siliconix sqd15n06-42l.pdf Description: MOSFET N-CH 60V 15A TO252
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SIP4282ADVP-3-E3 sip4282.pdf
SIP4282ADVP-3-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Rds On (Typ): 350mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: PowerPAK® SC-75-6L
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PowerPAK® SC-75-6L
Ratio - Input:Output: 1:1
Current - Output (Max): 1.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
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SIP4282DVP-3-T1-E3 sip4282.pdf
SIP4282DVP-3-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 PWRPAK
Packaging: Tape & Reel (TR)
Features: Load Discharge, Slew Rate Controlled
Package / Case: PowerPAK® SC-75-6L
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.8V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PowerPAK® SC-75-6L
Part Status: Active
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SIP43101DLP-T1-E3 72640.pdf
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH BIPOLAR 1:1 44MLP
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP44-16
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Inverting, Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: PowerPAK® MLP44-16
Packaging: Tape & Reel (TR)
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SIP43101DQ-T1-E3 72640.pdf
SIP43101DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH BIPOLAR 1:1 16TSSOP
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Supplier Device Package: 16-TSSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Inverting, Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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SIP43102DLP-T1-E3 sip43102.pdf
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH BIPOLAR 1:1 44MLP
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP44-16
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: PowerPAK® MLP44-16
Packaging: Tape & Reel (TR)
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SIP43102DQ-T1-E3 sip43102.pdf
SIP43102DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH BIPOLAR 1:1 16TSSOP
Supplier Device Package: 16-TSSOP
Ratio - Input:Output: 1:1
Current - Output (Max): 200mA
Voltage - Load: 9V ~ 32V
Input Type: Non-Inverting
Output Configuration: High Side or Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
Packaging: Tape & Reel (TR)
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SIP4610ADT-T1-E3 SIP4610A%2CB.pdf
SIP4610ADT-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH P-CHAN 1:1 TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 145mOhm
Input Type: Non-Inverting
Voltage - Load: 2.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4610BDT-T1-E3 SIP4610A%2CB.pdf
SIP4610BDT-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH P-CHAN 1:1 TSOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 145mOhm
Input Type: Non-Inverting
Voltage - Load: 2.4V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Obsolete
Produkt ist nicht verfügbar
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SIP4612ADVP-T1-E3 sip4612.pdf
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: PowerPAK® TSC-75-6
Packaging: Tape & Reel (TR)
Voltage - Load: 2.4V ~ 5.5V
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: PowerPAK® TSC75-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Produkt ist nicht verfügbar
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SIP4613ADVP-T1-E3 sip4613.pdf
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: PowerPAK® TSC75-6
Ratio - Input:Output: 1:1
Mounting Type: Surface Mount
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.4V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Output Type: P-Channel
Package / Case: PowerPAK® TSC-75-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP4613BDVP-T1-E3 sip4613.pdf
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC75-6
Part Status: Obsolete
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: PowerPAK® TSC75-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.4V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 150mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: PowerPAK® TSC-75-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP5628CS-TR-E3 SIP56xx_Family.pdf
Hersteller: Vishay Siliconix
Description: IC SCSI 14-LINE TERM
Part Status: Obsolete
Number of Terminations: 14
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Packaging: Tray
Produkt ist nicht verfügbar
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SIP5630CG-T1-E3 SIP56xx_Family.pdf
Hersteller: Vishay Siliconix
Description: IC SCSI 14-LINE TERM 36-QSOP
Part Status: Obsolete
Supplier Device Package: 36-QSOP
Number of Terminations: 9
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP5638CS-TR-E3 SIP56xx_Family.pdf
SIP5638CS-TR-E3
Hersteller: Vishay Siliconix
Description: IC SCSI 14-LINE TERM SQFP
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: 48-SQFP (7x7)
Number of Terminations: 15
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Produkt ist nicht verfügbar
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SIP5668CS-TR-E3 SIP56xx_Family.pdf
SIP5668CS-TR-E3
Hersteller: Vishay Siliconix
Description: IC SCSI 14-LINE TERM SQFP
Part Status: Obsolete
Supplier Device Package: 48-SQFP (7x7)
Number of Terminations: 14
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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SIP5670CG-T1-E3 SIP56xx_Family.pdf
Hersteller: Vishay Siliconix
Description: IC SCSI 9-LINE TERM 36-QSOP
Part Status: Active
Supplier Device Package: 36-QSOP
Number of Terminations: 9
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIP5678CS-TR-E3 SIP56xx_Family.pdf
SIP5678CS-TR-E3
Hersteller: Vishay Siliconix
Description: IC SCSI 15-LINE TERM SQFP
Part Status: Obsolete
Supplier Device Package: 48-SQFP (7x7)
Number of Terminations: 15
Voltage - Supply: 2.7V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: SCSI
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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SIR168DP-T1-GE3 65039.pdf
SIR168DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Produkt ist nicht verfügbar
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SIR172DP-T1-GE3 sir172dp.pdf
SIR172DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 29.8W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 16.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIR406DP-T1-GE3 SIR406DP.pdf
SIR406DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIR410DP-T1-GE3 sir410d.pdf
SIR410DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.86 EUR
Mindestbestellmenge: 3000 Stücke
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SIR416DP-T1-GE3 sir416dp.pdf
SIR416DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Produkt ist nicht verfügbar
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SIR418DP-T1-GE3 sir418dp.pdf
SIR418DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.93 EUR
6000+0.87 EUR
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SIR422DP-T1-GE3 sir422dp.pdf
SIR422DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 20 V
Produkt ist nicht verfügbar
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SIR424DP-T1-GE3 sir424dp.pdf
SIR424DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Produkt ist nicht verfügbar
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SIR428DP-T1-GE3 sir428dp.pdf
SIR428DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V PPAK 8SOIC
Produkt ist nicht verfügbar
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SIR432DP-T1-GE3 sir432dp.pdf
SIR432DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28.4A PPAK SO-8
Produkt ist nicht verfügbar
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SIR436DP-T1-GE3 sir436dp.pdf
SIR436DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A PPAK SO-8
Produkt ist nicht verfügbar
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SIR460DP-T1-GE3 sir460dp.pdf
SIR460DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 2071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIR484DP-T1-GE3 sir484dp.pdf
SIR484DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 20A PPAK SO-8
Produkt ist nicht verfügbar
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SIR494DP-T1-GE3 sir494dp.pdf
SIR494DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 60A PPAK SO-8
Produkt ist nicht verfügbar
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SIR874DP-T1-GE3 sir874dp.pdf
SIR874DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 20A PPAK SO-8
Produkt ist nicht verfügbar
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SIS410DN-T1-GE3 sis410dn.pdf
SIS410DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.81 EUR
Mindestbestellmenge: 3000 Stücke
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SIS424DN-T1-GE3 sis424dn.pdf
SIS424DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 19.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIS430DN-T1-GE3 sis430dn.pdf
SIS430DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 35A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIS434DN-T1-GE3 sis434dn.pdf
SIS434DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 35A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 16.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SIS436DN-T1-GE3 sis436dn.pdf
SIS436DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SiS438DN-T1-GE3 sis438dn.pdf
SiS438DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 16A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 27.7W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 10 V
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AnzahlPrivatkunde
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SIZ700DT-T1-GE3 siz700dt.pdf
SIZ700DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
Produkt ist nicht verfügbar
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SIZ704DT-T1-GE3 siz704dt.pdf
SIZ704DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 20W, 30W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.83 EUR
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SIZ720DT-T1-GE3 siz720dt.pdf
SIZ720DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A 6POWERPAIR
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 16.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 10V
Produkt ist nicht verfügbar
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SMMA511DJ-T1-GE3 smma511d.pdf
SMMA511DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 6.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SMMB911DK-T1-GE3 SMMB911DK-T1-GE3.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6L
Supplier Device Package: PowerPAK® SC-75-6L Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-75-6L Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQ2308ES-T1-GE3 SQ2308ES.pdf
SQ2308ES-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 60V TO236
Produkt ist nicht verfügbar
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SQ3442EV-T1-GE3 sq3442ev.pdf
SQ3442EV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.3A 6TSOP
Produkt ist nicht verfügbar
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SQ3456EV-T1-GE3 sq3456ev.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 6TSOP
Produkt ist nicht verfügbar
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SQ4401DY-T1-GE3 sq4401dy.pdf
SQ4401DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 15.8A 8SOIC
Produkt ist nicht verfügbar
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SQ4410EY-T1-GE3 sq4410ey.pdf
SQ4410EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SOIC
Produkt ist nicht verfügbar
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SQ4431EY-T1-GE3 sq4431ey.pdf
SQ4431EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.8A 8SOIC
Produkt ist nicht verfügbar
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SQ4470EY-T1-GE3 sq4470ey.pdf
SQ4470EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SOIC
Produkt ist nicht verfügbar
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SQ4840EY-T1-GE3 sq4840ey.pdf
SQ4840EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 20.7A 8SOIC
Produkt ist nicht verfügbar
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SQ4850EY-T1_GE3 sq4850ey.pdf
SQ4850EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 12A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 5V
Power Dissipation (Max): 6.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.95 EUR
5000+0.88 EUR
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SQ4936EY-T1-GE3 sq4936ey.pdf
SQ4936EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7A 8SOIC
Produkt ist nicht verfügbar
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SQ4942EY-T1-GE3 sq4942ey.pdf
SQ4942EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Produkt ist nicht verfügbar
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SQ4946EY-T1-E3 sq4946ey0.pdf
SQ4946EY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.4W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQ7002K-T1-GE3 SQ7002K.pdf
SQ7002K-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 320MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SQ7414EN-T1-E3 sq7414en.pdf
SQ7414EN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK 1212-8
Produkt ist nicht verfügbar
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SQ7415EN-T1-E3 sq7415en.pdf
SQ7415EN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK 1212-8
Produkt ist nicht verfügbar
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SQ9945AEY-T1-E3 sq9945ae.pdf
SQ9945AEY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SQD15N06-42L-GE3 sqd15n06-42l.pdf
SQD15N06-42L-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A TO252
Produkt ist nicht verfügbar
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