Die Produkte vishay siliconix

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SIHA24N65EF-E3 SIHA24N65EF-E3 siha24n65ef.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 650V 24A TO220
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA24
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
SIHB24N65EF-GE3 SIHB24N65EF-GE3 sihb24n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 24A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG24N65EF-GE3 SIHG24N65EF-GE3 sihg24n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 24A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG44N65EF-GE3 SIHG44N65EF-GE3 sihg44n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 46A TO247AC
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5892 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W (Tc)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
2+ 25.01 EUR
SIHH14N65EF-T1-GE3 SIHH14N65EF-T1-GE3 sihh14n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 650V 15A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
2+ 13.75 EUR
10+ 12.36 EUR
SIHH24N65E-T1-GE3 SIHH24N65E-T1-GE3 sihh24n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3977 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 971 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3977 Stücke - Preis und Lieferfrist anzeigen
2+ 17.29 EUR
10+ 15.61 EUR
100+ 12.93 EUR
500+ 11.26 EUR
SIHH24N65EF-T1-GE3 SIHH24N65EF-T1-GE3 sihh24n65ef.pdf Vishay Siliconix Description: MOSFET N-CHAN 650V 23A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4463CDY-T1-GE3 SI4463CDY-T1-GE3 si4463cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 13.6A/49A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7904 Stücke - Preis und Lieferfrist anzeigen
SIRA88DP-T1-GE3 SIRA88DP-T1-GE3 sira88dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Drain to Source Voltage (Vdss): 30V
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
auf Bestellung 2203 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
SIHFR9310TR-GE3 SIHFR9310TR-GE3 sihfr931.pdf Vishay Siliconix Description: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9926BDY-T1-E3 SI9926BDY-T1-E3 si9926bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Base Part Number: SI9926
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 27080 Stücke - Preis und Lieferfrist anzeigen
SIP32509DT-T1-GE3 SIP32509DT-T1-GE3 sip32508.pdf Vishay Siliconix Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9640STRRPBF IRF9640STRRPBF IRF(SiHF)9640(S,L).pdf Vishay Siliconix Description: MOSFET P-CH 200V 11A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 600 Stücke - Preis und Lieferfrist anzeigen
IRLR024PBF IRLR024PBF sihlr024.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 60V 14A DPAK
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU5N50D-GE3 SIHU5N50D-GE3 sihu5n50d.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5.3A TO251
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2319CDS-T1-GE3 SI2319CDS-T1-GE3 si2319cd.pdf Vishay Siliconix Description: MOSFET P-CH 40V 4.4A SOT-23
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2319
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 12037 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60ET1-GE3 SIHB22N60ET1-GE3 sihb22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO263
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
auf Bestellung 785 Stücke
Lieferzeit 21-28 Tag (e)
SIHG22N60E-GE3 SIHG22N60E-GE3 sihg22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 17 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60E-E3 SIHB22N60E-E3 sihb22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
SIHP22N60E-GE3 SIHP22N60E-GE3 sihp22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG22N60AE-GE3 SIHG22N60AE-GE3 sihg22n60ae.pdf Vishay Siliconix Description: MOSFET N-CH 600V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
auf Bestellung 469 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60AE-GE3 SIHB22N60AE-GE3 sihb22n60ae.pdf Vishay Siliconix Description: MOSFET N-CH 600V 20A D2PAK
Power Dissipation (Max): 179W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB22
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 700 Stücke
Lieferzeit 21-28 Tag (e)
SIHA22N60AE-E3 SIHA22N60AE-E3 siha22n60ae.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 600V 20A TO220
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA22
auf Bestellung 863 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60E-GE3 SIHB22N60E-GE3 sihb22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A D2PAK
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF22N60E-GE3 SIHF22N60E-GE3 sihf22n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 21A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SIHF22
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJ438DP-T1-GE3 SIJ438DP-T1-GE3 sij438dp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 80A PPAK SO-8L
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
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Lieferzeit 21-28 Tag (e)
auf Bestellung 16690 Stücke - Preis und Lieferfrist anzeigen
IRF510STRL IRF510STRL Vishay Siliconix Description: MOSFET N-CH 100V 5.6A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP22N60AE-GE3 SIHP22N60AE-GE3 sihp22n60ae.pdf Vishay Siliconix Description: MOSFET N-CH 600V 20A TO220AB
Base Part Number: SIHP22
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU2N80E-GE3 SIHU2N80E-GE3 sihu2n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 2.8A IPAK
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHU2
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
auf Bestellung 3037 Stücke
Lieferzeit 21-28 Tag (e)
SIHU6N80E-GE3 SIHU6N80E-GE3 sihu6n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 5.4A IPAK
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU6N62E-GE3 SIHU6N62E-GE3 sihu6n62e.pdf Vishay Siliconix Description: MOSFET N-CH 620V 6A IPAK
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI2308BDS-T1-E3 SI2308BDS-T1-E3 si2308bd.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2.3A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 24703 Stücke
Lieferzeit 21-28 Tag (e)
SISS73DN-T1-GE3 SISS73DN-T1-GE3 siss73dn.pdf Vishay Siliconix Description: MOSFET P-CH 150V 4.4A/16.2A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 719pF @ 75V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS73
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5010 Stücke - Preis und Lieferfrist anzeigen
SIHFB11N50A-E3 SIHFB11N50A-E3 91094.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90220E-GE3 SUM90220E-GE3 sum90220e.pdf Vishay Siliconix Description: MOSFET N-CH 200V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 81 Stücke - Preis und Lieferfrist anzeigen
SUM25P10-138-E3 SUM25P10-138-E3 SUM25P10-138.pdf Vishay Siliconix Description: MOSFET N-CH 100V 16.7A TO263
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA68EP-T1_GE3 SQJA68EP-T1_GE3 sqja68ep.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
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Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
auf Bestellung 3912 Stücke
Lieferzeit 21-28 Tag (e)
SIHB6N80E-GE3 sihb6n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V D2PAK TO-263
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7463DP-T1-E3 SI7463DP-T1-E3 si7463dp.pdf Vishay Siliconix Description: MOSFET P-CH 40V 11A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SI7463
auf Bestellung 9294 Stücke
Lieferzeit 21-28 Tag (e)
SI7540ADP-T1-GE3 SI7540ADP-T1-GE3 si7540adp.pdf Vishay Siliconix Description: MOSFET N/P-CH POWERPAK8
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7540
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
auf Bestellung 11084 Stücke
Lieferzeit 21-28 Tag (e)
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IRFR9310TRPBF IRFR9310TRPBF sihfr931.pdf Vishay Siliconix Description: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 1023 Stücke
Lieferzeit 21-28 Tag (e)
SIHH11N65E-T1-GE3 SIHH11N65E-T1-GE3 sihh11n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N65EF-T1-GE3 SIHH11N65EF-T1-GE3 sihh11n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
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Lieferzeit 21-28 Tag (e)
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3+ 11.23 EUR
10+ 10.1 EUR
SIR870ADP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
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DG412DQ-T1-E3 DG412DQ-T1-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST TSSOP16
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±15V
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -85dB @ 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG413DQ-T1-E3 DG413DQ-T1-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST LV 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Base Part Number: DG413
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
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DG419LEDQ-T1-GE3 DG419LEDQ-T1-GE3 dg417le.pdf Vishay Siliconix Description: IC ANALOG SWITCH 8MSOP
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: IC ANALOG SWITCH 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
On-State Resistance (Max): 18Ohm
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Lieferzeit 21-28 Tag (e)
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7+ 3.9 EUR
10+ 3.49 EUR
25+ 3.31 EUR
100+ 2.72 EUR
250+ 2.54 EUR
500+ 2.25 EUR
1000+ 1.84 EUR
DG419LEDY-T1-GE4 DG419LEDY-T1-GE4 dg417le.pdf Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
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Lieferzeit 21-28 Tag (e)
2500+ 1.56 EUR
Vishay Siliconix Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
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Lieferzeit 21-28 Tag (e)
8+ 3.33 EUR
10+ 2.97 EUR
25+ 2.81 EUR
100+ 2.31 EUR
250+ 2.16 EUR
500+ 1.91 EUR
1000+ 1.56 EUR
SQ2318AES-T1_GE3 SQ2318AES-T1_GE3 sq2318aes.pdf Vishay Siliconix Description: MOSFET N-CHAN 40V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V
Vgs (Max): ±20V
Base Part Number: SQ2318
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
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Lieferzeit 21-28 Tag (e)
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SI4378DY-T1-E3 SI4378DY-T1-E3 si4378dy.pdf Vishay Siliconix Description: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SI7336ADP-T1-E3 SI7336ADP-T1-E3 si7336adp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
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Lieferzeit 21-28 Tag (e)
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SIZ342DT-T1-GE3 SIZ342DT-T1-GE3 siz342dt.pdf Vishay Siliconix Description: MOSFET DL N-CH 30V POWERPAIR3X3
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET DL N-CH 30V POWERPAIR3X3
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
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12+ 2.34 EUR
13+ 2.09 EUR
100+ 1.63 EUR
500+ 1.35 EUR
DG212BDQ-T1-E3 DG212BDQ-T1-E3 70040.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG212
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
Number of Circuits: 4
On-State Resistance (Max): 85Ohm
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Lieferzeit 21-28 Tag (e)
SUP40010EL-GE3 SUP40010EL-GE3 sup40010el.pdf Vishay Siliconix Description: MOSFET N-CH 40V 120A TO220AB
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
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Lieferzeit 21-28 Tag (e)
4+ 7.54 EUR
10+ 6.77 EUR
100+ 5.55 EUR
IRF644STRRPBF IRF644STRRPBF sihf644s.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SI2302DDS-T1-GE3 SI2302DDS-T1-GE3 si2302dds.pdf Vishay Siliconix Description: MOSFET N-CH 20V 2.9A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR158DP-T1-RE3 SIR158DP-T1-RE3 sir158dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET N-CH 30V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
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Lieferzeit 21-28 Tag (e)
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SQ4532AEY-T1_GE3 SQ4532AEY-T1_GE3 sq4532aey.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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Lieferzeit 21-28 Tag (e)
SI4532ADY-T1-GE3 SI4532ADY-T1-GE3 si4532ady.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 3.7A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Power - Max: 1.13W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH112DN-T1-GE3 SISH112DN-T1-GE3 sish112dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8096 Stücke - Preis und Lieferfrist anzeigen
IRF830STRLPBF IRF830STRLPBF sihf830s.pdf Vishay Siliconix Description: MOSFET N-CH 500V 4.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7855 Stücke - Preis und Lieferfrist anzeigen
IRF830ASTRLPBF IRF830ASTRLPBF sihf830a.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
auf Bestellung 615 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.06 EUR
10+ 5.44 EUR
100+ 4.37 EUR
IRFBG30PBF IRFBG30PBF 91124.pdf Vishay Siliconix Description: MOSFET N-CH 1000V 3.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14967 Stücke - Preis und Lieferfrist anzeigen
SI7460DP-T1-GE3 SI7460DP-T1-GE3 si7460dp.pdf Vishay Siliconix Description: MOSFET N-CH 60V 11A PPAK SO-8
Base Part Number: SI7460
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 55356 Stücke
Lieferzeit 21-28 Tag (e)
IRF740STRRPBF IRF740STRRPBF sihf740s.pdf Vishay Siliconix Description: MOSFET N-CH 400V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2621 Stücke - Preis und Lieferfrist anzeigen
IRF740ASTRLPBF IRF740ASTRLPBF sihf740a.pdf Vishay Siliconix Description: MOSFET N-CH 400V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
IRFR120TRLPBF IRFR120TRLPBF sihfr120.pdf Vishay Siliconix Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1262 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.98 EUR
10+ 3.57 EUR
100+ 2.78 EUR
500+ 2.3 EUR
1000+ 1.82 EUR
SI7102DN-T1-E3 SI7102DN-T1-E3 si7102dn.pdf Vishay Siliconix Description: MOSFET N-CH 12V 35A PPAK 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 2770 Stücke
Lieferzeit 21-28 Tag (e)
SIRB40DP-T1-GE3 SIRB40DP-T1-GE3 sirb40dp.pdf Vishay Siliconix Description: MOSFET 2 N-CH 40V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 46.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBE30STRLPBF IRFBE30STRLPBF 91119.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.1A D2PAK
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 780 Stücke - Preis und Lieferfrist anzeigen
IRFZ34SPBF IRFZ34SPBF sihfz34s.pdf Vishay Siliconix Description: MOSFET N-CH 60V 30A D2PAK
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
SIP32431DR3-T1GE3 SIP32431DR3-T1GE3 sip32431.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Base Part Number: SIP32431
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
auf Bestellung 63927 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 36172 Stücke
Lieferzeit 21-28 Tag (e)
16+ 1.66 EUR
18+ 1.46 EUR
25+ 1.37 EUR
100+ 1.12 EUR
250+ 1.04 EUR
500+ 0.89 EUR
1000+ 0.71 EUR
Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 33000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.69 EUR
SIHH21N60EF-T1-GE3 SIHH21N60EF-T1-GE3 sihh21n60ef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.22 EUR
10+ 12.79 EUR
SI1869DH-T1-E3 SI1869DH-T1-E3 SI1869DH.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Base Part Number: SI1869
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 132mOhm
Current - Output (Max): 1.2A
Voltage - Load: 1.8V ~ 20V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
auf Bestellung 8593 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5660 Stücke - Preis und Lieferfrist anzeigen
SIP32510DT-T1-GE3 SIP32510DT-T1-GE3 sip32510.pdf Vishay Siliconix Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 17838 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Output Configuration: High Side
Ratio - Input:Output: 1:1
Base Part Number: SIP32510
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3161 Stücke
Lieferzeit 21-28 Tag (e)
SI1865DDL-T1-GE3 SI1865DDL-T1-GE3 Si1865DDL.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 165mOhm
Current - Output (Max): 1.1A
Interface: On/Off
Voltage - Load: 1.8V ~ 12V
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
auf Bestellung 11 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6820 Stücke - Preis und Lieferfrist anzeigen
SIHW61N65EF-GE3 SIHW61N65EF-GE3 sihw61n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 64A TO247AD
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
auf Bestellung 457 Stücke
Lieferzeit 21-28 Tag (e)
SIHG61N65EF-GE3 SIHG61N65EF-GE3 sihg61n65ef.pdf Vishay Siliconix Description: MOSFET N-CH 650V 64A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
auf Bestellung 426 Stücke
Lieferzeit 21-28 Tag (e)
SIHA24N65EF-E3 siha24n65ef.pdf
SIHA24N65EF-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 650V 24A TO220
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA24
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
SIHB24N65EF-GE3 sihb24n65ef.pdf
SIHB24N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG24N65EF-GE3 sihg24n65ef.pdf
SIHG24N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG44N65EF-GE3 sihg44n65ef.pdf
SIHG44N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 46A TO247AC
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5892 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W (Tc)
auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
2+ 25.01 EUR
SIHH14N65EF-T1-GE3 sihh14n65ef.pdf
SIHH14N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
SIHH14N65EF-T1-GE3 sihh14n65ef.pdf
SIHH14N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
2+ 13.75 EUR
10+ 12.36 EUR
SIHH24N65E-T1-GE3 sihh24n65e.pdf
SIHH24N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4948 Stücke - Preis und Lieferfrist anzeigen
SIHH24N65E-T1-GE3 sihh24n65e.pdf
SIHH24N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 971 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3977 Stücke - Preis und Lieferfrist anzeigen
2+ 17.29 EUR
10+ 15.61 EUR
100+ 12.93 EUR
500+ 11.26 EUR
SIHH24N65EF-T1-GE3 sihh24n65ef.pdf
SIHH24N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 650V 23A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4463CDY-T1-GE3 si4463cd.pdf
SI4463CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.6A/49A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7904 Stücke - Preis und Lieferfrist anzeigen
SIRA88DP-T1-GE3 sira88dp.pdf
SIRA88DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Drain to Source Voltage (Vdss): 30V
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
auf Bestellung 2203 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
SIHFR9310TR-GE3 sihfr931.pdf
SIHFR9310TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI9926BDY-T1-E3 si9926bd.pdf
SI9926BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Base Part Number: SI9926
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 27080 Stücke - Preis und Lieferfrist anzeigen
SIP32509DT-T1-GE3 sip32508.pdf
SIP32509DT-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF9640STRRPBF IRF(SiHF)9640(S,L).pdf
IRF9640STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 600 Stücke - Preis und Lieferfrist anzeigen
IRLR024PBF техническая информация sihlr024.pdf
IRLR024PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU5N50D-GE3 sihu5n50d.pdf
SIHU5N50D-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO251
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2319CDS-T1-GE3 si2319cd.pdf
SI2319CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.4A SOT-23
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2319
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 12037 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60ET1-GE3 sihb22n60e.pdf
SIHB22N60ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
auf Bestellung 785 Stücke
Lieferzeit 21-28 Tag (e)
SIHG22N60E-GE3 sihg22n60e.pdf
SIHG22N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 17 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60E-E3 sihb22n60e.pdf
SIHB22N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
SIHP22N60E-GE3 sihp22n60e.pdf
SIHP22N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG22N60AE-GE3 sihg22n60ae.pdf
SIHG22N60AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
auf Bestellung 469 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60AE-GE3 sihb22n60ae.pdf
SIHB22N60AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A D2PAK
Power Dissipation (Max): 179W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB22
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 700 Stücke
Lieferzeit 21-28 Tag (e)
SIHA22N60AE-E3 siha22n60ae.pdf
SIHA22N60AE-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 20A TO220
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA22
auf Bestellung 863 Stücke
Lieferzeit 21-28 Tag (e)
SIHB22N60E-GE3 sihb22n60e.pdf
SIHB22N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF22N60E-GE3 sihf22n60e.pdf
SIHF22N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SIHF22
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJ438DP-T1-GE3 sij438dp.pdf
SIJ438DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80A PPAK SO-8L
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 16690 Stücke - Preis und Lieferfrist anzeigen
IRF510STRL
IRF510STRL
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP22N60AE-GE3 sihp22n60ae.pdf
SIHP22N60AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A TO220AB
Base Part Number: SIHP22
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU2N80E-GE3 sihu2n80e.pdf
SIHU2N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.8A IPAK
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHU2
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
auf Bestellung 3037 Stücke
Lieferzeit 21-28 Tag (e)
SIHU6N80E-GE3 sihu6n80e.pdf
SIHU6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A IPAK
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHU6N62E-GE3 sihu6n62e.pdf
SIHU6N62E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 620V 6A IPAK
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI2308BDS-T1-E3 si2308bd.pdf
SI2308BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 24703 Stücke
Lieferzeit 21-28 Tag (e)
SISS73DN-T1-GE3 siss73dn.pdf
SISS73DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.4A/16.2A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 719pF @ 75V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS73
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5010 Stücke - Preis und Lieferfrist anzeigen
SIHFB11N50A-E3 91094.pdf
SIHFB11N50A-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM90220E-GE3 sum90220e.pdf
SUM90220E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 81 Stücke - Preis und Lieferfrist anzeigen
SUM25P10-138-E3 SUM25P10-138.pdf
SUM25P10-138-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.7A TO263
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJA68EP-T1_GE3 sqja68ep.pdf
SQJA68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3912 Stücke - Preis und Lieferfrist anzeigen
SQJA68EP-T1_GE3 sqja68ep.pdf
SQJA68EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
auf Bestellung 3912 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIHB6N80E-GE3 sihb6n80e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V D2PAK TO-263
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7463DP-T1-E3 si7463dp.pdf
SI7463DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SI7463
auf Bestellung 9294 Stücke
Lieferzeit 21-28 Tag (e)
SI7540ADP-T1-GE3 si7540adp.pdf
SI7540ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH POWERPAK8
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7540
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
auf Bestellung 11084 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 251 Stücke - Preis und Lieferfrist anzeigen
IRFR9310TRPBF sihfr931.pdf
IRFR9310TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 1023 Stücke
Lieferzeit 21-28 Tag (e)
SIHH11N65E-T1-GE3 sihh11n65e.pdf
SIHH11N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHH11N65EF-T1-GE3 sihh11n65ef.pdf
SIHH11N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHH11N65EF-T1-GE3 sihh11n65ef.pdf
SIHH11N65EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
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Lieferzeit 21-28 Tag (e)
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3+ 11.23 EUR
10+ 10.1 EUR
SIR870ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
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Lieferzeit 21-28 Tag (e)
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SIR870ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
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Lieferzeit 21-28 Tag (e)
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DG412DQ-T1-E3 dg411.pdf
DG412DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST TSSOP16
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±15V
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -85dB @ 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG413DQ-T1-E3 dg411.pdf
DG413DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Base Part Number: DG413
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
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Lieferzeit 21-28 Tag (e)
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DG419LEDQ-T1-GE3 dg417le.pdf
DG419LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG419LEDQ-T1-GE3 dg417le.pdf
DG419LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
On-State Resistance (Max): 18Ohm
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Lieferzeit 21-28 Tag (e)
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7+ 3.9 EUR
10+ 3.49 EUR
25+ 3.31 EUR
100+ 2.72 EUR
250+ 2.54 EUR
500+ 2.25 EUR
1000+ 1.84 EUR
DG419LEDY-T1-GE4 dg417le.pdf
DG419LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
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Lieferzeit 21-28 Tag (e)
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2500+ 1.56 EUR
DG419LEDY-T1-GE4 dg417le.pdf
DG419LEDY-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
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Lieferzeit 21-28 Tag (e)
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8+ 3.33 EUR
10+ 2.97 EUR
25+ 2.81 EUR
100+ 2.31 EUR
250+ 2.16 EUR
500+ 1.91 EUR
1000+ 1.56 EUR
SQ2318AES-T1_GE3 sq2318aes.pdf
SQ2318AES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V
Vgs (Max): ±20V
Base Part Number: SQ2318
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
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Lieferzeit 21-28 Tag (e)
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SI4378DY-T1-E3 si4378dy.pdf
SI4378DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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SI7336ADP-T1-E3 si7336adp.pdf
SI7336ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
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Lieferzeit 21-28 Tag (e)
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SIZ342DT-T1-GE3 siz342dt.pdf
SIZ342DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIZ342DT-T1-GE3 siz342dt.pdf
SIZ342DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
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Lieferzeit 21-28 Tag (e)
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12+ 2.34 EUR
13+ 2.09 EUR
100+ 1.63 EUR
500+ 1.35 EUR
DG212BDQ-T1-E3 70040.pdf
DG212BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG212
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
Number of Circuits: 4
On-State Resistance (Max): 85Ohm
auf Bestellung 6392 Stücke
Lieferzeit 21-28 Tag (e)
SUP40010EL-GE3 sup40010el.pdf
SUP40010EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO220AB
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
auf Bestellung 206 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.54 EUR
10+ 6.77 EUR
100+ 5.55 EUR
IRF644STRRPBF sihf644s.pdf
IRF644STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 736 Stücke
Lieferzeit 21-28 Tag (e)
SI2302DDS-T1-GE3 si2302dds.pdf
SI2302DDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.9A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR158DP-T1-RE3 sir158dp.pdf
SIR158DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR158DP-T1-RE3 sir158dp.pdf
SIR158DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2854 Stücke - Preis und Lieferfrist anzeigen
SQ4532AEY-T1_GE3 sq4532aey.pdf
SQ4532AEY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 560 Stücke - Preis und Lieferfrist anzeigen
SQ4532AEY-T1_GE3 sq4532aey.pdf
SQ4532AEY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 560 Stücke
Lieferzeit 21-28 Tag (e)
SI4532ADY-T1-GE3 si4532ady.pdf
SI4532ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Power - Max: 1.13W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SISH112DN-T1-GE3 sish112dn.pdf
SISH112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8096 Stücke - Preis und Lieferfrist anzeigen
IRF830STRLPBF sihf830s.pdf
IRF830STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7855 Stücke - Preis und Lieferfrist anzeigen
IRF830ASTRLPBF sihf830a.pdf
IRF830ASTRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
auf Bestellung 615 Stücke
Lieferzeit 21-28 Tag (e)
5+ 6.06 EUR
10+ 5.44 EUR
100+ 4.37 EUR
IRFBG30PBF 91124.pdf
IRFBG30PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14967 Stücke - Preis und Lieferfrist anzeigen
SI7460DP-T1-GE3 si7460dp.pdf
SI7460DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Base Part Number: SI7460
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 55356 Stücke
Lieferzeit 21-28 Tag (e)
IRF740STRRPBF sihf740s.pdf
IRF740STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2621 Stücke - Preis und Lieferfrist anzeigen
IRF740ASTRLPBF sihf740a.pdf
IRF740ASTRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
IRFR120TRLPBF sihfr120.pdf
IRFR120TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1262 Stücke
Lieferzeit 21-28 Tag (e)
7+ 3.98 EUR
10+ 3.57 EUR
100+ 2.78 EUR
500+ 2.3 EUR
1000+ 1.82 EUR
SI7102DN-T1-E3 si7102dn.pdf
SI7102DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 2770 Stücke
Lieferzeit 21-28 Tag (e)
SIRB40DP-T1-GE3 sirb40dp.pdf
SIRB40DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 46.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBE30STRLPBF 91119.pdf
IRFBE30STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 780 Stücke - Preis und Lieferfrist anzeigen
IRFZ34SPBF sihfz34s.pdf
IRFZ34SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Base Part Number: SIP32431
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
auf Bestellung 63927 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 69172 Stücke - Preis und Lieferfrist anzeigen
SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 36172 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 96927 Stücke - Preis und Lieferfrist anzeigen
16+ 1.66 EUR
18+ 1.46 EUR
25+ 1.37 EUR
100+ 1.12 EUR
250+ 1.04 EUR
500+ 0.89 EUR
1000+ 0.71 EUR
SIP32431DR3-T1GE3 sip32431.pdf
SIP32431DR3-T1GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 33000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 100099 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.69 EUR
SIHH21N60EF-T1-GE3 sihh21n60ef.pdf
SIHH21N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
SIHH21N60EF-T1-GE3 sihh21n60ef.pdf
SIHH21N60EF-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
auf Bestellung 30 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.22 EUR
10+ 12.79 EUR
SI1869DH-T1-E3 SI1869DH.pdf
SI1869DH-T1-E3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Base Part Number: SI1869
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 132mOhm
Current - Output (Max): 1.2A
Voltage - Load: 1.8V ~ 20V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
auf Bestellung 8593 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5660 Stücke - Preis und Lieferfrist anzeigen
SIP32510DT-T1-GE3 sip32510.pdf
SIP32510DT-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 17838 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3161 Stücke - Preis und Lieferfrist anzeigen
SIP32510DT-T1-GE3 sip32510.pdf
SIP32510DT-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Output Configuration: High Side
Ratio - Input:Output: 1:1
Base Part Number: SIP32510
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3161 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17838 Stücke - Preis und Lieferfrist anzeigen
SI1865DDL-T1-GE3 Si1865DDL.pdf
SI1865DDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 165mOhm
Current - Output (Max): 1.1A
Interface: On/Off
Voltage - Load: 1.8V ~ 12V
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
auf Bestellung 11 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6820 Stücke - Preis und Lieferfrist anzeigen
SIHW61N65EF-GE3 sihw61n65ef.pdf
SIHW61N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AD
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
auf Bestellung 457 Stücke
Lieferzeit 21-28 Tag (e)
SIHG61N65EF-GE3 sihg61n65ef.pdf
SIHG61N65EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
auf Bestellung 426 Stücke
Lieferzeit 21-28 Tag (e)
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