Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SIHA24N65EF-E3 |
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Vishay Siliconix |
Description: MOSFET N-CHANNEL 650V 24A TO220 Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V Power Dissipation (Max): 39W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack Base Part Number: SIHA24 |
auf Bestellung 3 Stücke Lieferzeit 21-28 Tag (e) |
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SIHB24N65EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 24A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHG24N65EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 24A TO247AC Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHG44N65EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 46A TO247AC Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5892 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 417W (Tc) |
auf Bestellung 5 Stücke Lieferzeit 21-28 Tag (e) |
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SIHH14N65EF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 15A PPAK 8 X 8 Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 650V 15A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) |
auf Bestellung 50 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
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SIHH24N65E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 23A PPAK 8 X 8 Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 202W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 650 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3977 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 650V 23A PPAK 8 X 8 Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 202W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 971 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3977 Stücke - Preis und Lieferfrist anzeigen
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SIHH24N65EF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHAN 650V 23A POWERPAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V Power Dissipation (Max): 202W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI4463CDY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 20V 13.6A/49A 8SO Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7904 Stücke - Preis und Lieferfrist anzeigen
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SIRA88DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 45.5A POWERPAKSO Drain to Source Voltage (Vdss): 30V Base Part Number: SIRA88 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc) |
auf Bestellung 2203 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
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SIHFR9310TR-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 400V 1.8A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 50W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI9926BDY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET 2N-CH 20V 6.2A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.2A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Base Part Number: SI9926 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.14W Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 27080 Stücke - Preis und Lieferfrist anzeigen
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SIP32509DT-T1-GE3 |
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Vishay Siliconix |
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6 Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 46mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: TSOT-23-6 Fault Protection: Reverse Current Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRF9640STRRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 200V 11A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 600 Stücke - Preis und Lieferfrist anzeigen
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IRLR024PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 14A DPAK Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 42W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHU5N50D-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5.3A TO251 Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SI2319CDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 4.4A SOT-23 Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI2319 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 12037 Stücke Lieferzeit 21-28 Tag (e) |
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SIHB22N60ET1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO263 Base Part Number: SIHB22 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Vgs (Max): ±30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drain to Source Voltage (Vdss): 600V |
auf Bestellung 785 Stücke Lieferzeit 21-28 Tag (e) |
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SIHG22N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO247AC Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Package / Case: TO-247-3 Supplier Device Package: TO-247AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube |
auf Bestellung 17 Stücke Lieferzeit 21-28 Tag (e) |
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SIHB22N60E-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drain to Source Voltage (Vdss): 600V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc) Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V |
auf Bestellung 30 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP22N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO220AB Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHG22N60AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 20A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V |
auf Bestellung 469 Stücke Lieferzeit 21-28 Tag (e) |
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SIHB22N60AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 20A D2PAK Power Dissipation (Max): 179W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D²Pak) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Base Part Number: SIHB22 Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix |
auf Bestellung 700 Stücke Lieferzeit 21-28 Tag (e) |
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SIHA22N60AE-E3 |
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Vishay Siliconix |
Description: MOSFET N-CHANNEL 600V 20A TO220 Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 33W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: SIHA22 |
auf Bestellung 863 Stücke Lieferzeit 21-28 Tag (e) |
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SIHB22N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A D2PAK Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: SIHB22 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 227W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHF22N60E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 21A TO220 Drive Voltage (Max Rds On, Min Rds On): 10V Base Part Number: SIHF22 Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 35W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIJ438DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 80A PPAK SO-8L FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIJ438 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 69.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) |
auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 16690 Stücke - Preis und Lieferfrist anzeigen
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IRF510STRL | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
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SIHP22N60AE-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 20A TO220AB Base Part Number: SIHP22 Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 179W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Manufacturer: Vishay Siliconix Packaging: Tube Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHU2N80E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 2.8A IPAK FET Type: N-Channel Part Status: Active Packaging: Tube Manufacturer: Vishay Siliconix Base Part Number: SIHU2 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 62.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) |
auf Bestellung 3037 Stücke Lieferzeit 21-28 Tag (e) |
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;;3.jpg "SIHU6N80E-GE3") |
SIHU6N80E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 5.4A IPAK Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: IPAK (TO-251) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Packaging: Tube Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHU6N62E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 620V 6A IPAK Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: IPAK (TO-251) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
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SI2308BDS-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 2.3A SOT23-3 Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc) Package / Case: TO-236-3, SC-59, SOT-23-3 Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 24703 Stücke Lieferzeit 21-28 Tag (e) |
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SISS73DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CH 150V 4.4A/16.2A PPAK Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 719pF @ 75V Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S Base Part Number: SISS73 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5010 Stücke - Preis und Lieferfrist anzeigen
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SIHFB11N50A-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SUM90220E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 200V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 81 Stücke - Preis und Lieferfrist anzeigen
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SUM25P10-138-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 16.7A TO263 Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SQJA68EP-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 14A PPAK SO-8L Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8L Package / Case: PowerPAK® SO-8L Base Part Number: SQJA68 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 14A PPAK SO-8L Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8L Package / Case: PowerPAK® SO-8L Base Part Number: SQJA68 |
auf Bestellung 3912 Stücke Lieferzeit 21-28 Tag (e) |
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| SIHB6N80E-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 800V D2PAK TO-263 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 78W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Supplier Device Package: D²PAK (TO-263) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
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SI7463DP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET P-CH 40V 11A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Base Part Number: SI7463 |
auf Bestellung 9294 Stücke Lieferzeit 21-28 Tag (e) |
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SI7540ADP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH POWERPAK8 Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A, 9A Drain to Source Voltage (Vdss): 20V FET Type: N and P-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI7540 Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Power - Max: 3.5W Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V |
auf Bestellung 11084 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 251 Stücke - Preis und Lieferfrist anzeigen
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IRFR9310TRPBF |
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Vishay Siliconix |
Description: MOSFET P-CH 400V 1.8A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 50W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active |
auf Bestellung 1023 Stücke Lieferzeit 21-28 Tag (e) |
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SIHH11N65E-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 12A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHH11N65EF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 11A PPAK 8 X 8 Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3045 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 650V 11A PPAK 8 X 8 Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 130W (Tc) |
auf Bestellung 23 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3045 Stücke - Preis und Lieferfrist anzeigen
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| SIR870ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 60A POWERPAKSO Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR870 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2695 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 100V 60A POWERPAKSO Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SIR870 |
auf Bestellung 5140 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2695 Stücke - Preis und Lieferfrist anzeigen
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DG412DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST TSSOP16 On-State Resistance (Max): 35Ohm Operating Temperature: -40°C ~ 85°C (TA) Charge Injection: 5pC Voltage - Supply, Dual (V±): ±15V Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 16-TSSOP Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Switch Time (Ton, Toff) (Max): 175ns, 145ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -85dB @ 1MHz |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8116 Stücke - Preis und Lieferfrist anzeigen
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DG413DQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST LV 16-TSSOP Voltage - Supply, Single (V+): 5V ~ 44V On-State Resistance (Max): 35Ohm Number of Circuits: 4 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO/NC Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -85dB @ 1MHz Current - Leakage (IS(off)) (Max): 250pA Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Charge Injection: 5pC Switch Time (Ton, Toff) (Max): 175ns, 145ns Voltage - Supply, Dual (V±): ±5V ~ 20V Base Part Number: DG413 Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) |
auf Bestellung 2498 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6131 Stücke - Preis und Lieferfrist anzeigen
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DG419LEDQ-T1-GE3 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 8MSOP On-State Resistance (Max): 18Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 6pF, 20pF Switch Time (Ton, Toff) (Max): 40ns, 35ns Multiplexer/Demultiplexer Circuit: 1:2 Switch Circuit: SPDT Crosstalk: -72dB @ 1MHz Charge Injection: 26pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 8-TSSOP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4792 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: IC ANALOG SWITCH 8MSOP Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 6pF, 20pF Switch Time (Ton, Toff) (Max): 40ns, 35ns Multiplexer/Demultiplexer Circuit: 1:2 Switch Circuit: SPDT Crosstalk: -72dB @ 1MHz Charge Injection: 26pC Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 8-TSSOP On-State Resistance (Max): 18Ohm |
auf Bestellung 1895 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 4792 Stücke - Preis und Lieferfrist anzeigen
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DG419LEDY-T1-GE4 |
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Vishay Siliconix |
Description: IC ANALOG SWITCH 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 6pF, 20pF Switch Time (Ton, Toff) (Max): 40ns, 35ns Multiplexer/Demultiplexer Circuit: 1:2 Switch Circuit: SPDT Crosstalk: -72dB @ 1MHz Charge Injection: 26pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 8-SO On-State Resistance (Max): 18Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount |
auf Bestellung 12500 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC ANALOG SWITCH 8SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Number of Circuits: 1 Part Status: Active Current - Leakage (IS(off)) (Max): 10nA Channel Capacitance (CS(off), CD(off)): 6pF, 20pF Crosstalk: -72dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 1:2 Switch Time (Ton, Toff) (Max): 40ns, 35ns Charge Injection: 26pC Voltage - Supply, Dual (V±): ±3V ~ 8V Voltage - Supply, Single (V+): 3V ~ 16V Supplier Device Package: 8-SO On-State Resistance (Max): 18Ohm Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount |
auf Bestellung 14591 Stücke Lieferzeit 21-28 Tag (e) |
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SQ2318AES-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CHAN 40V SOT23 Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V Vgs (Max): ±20V Base Part Number: SQ2318 Package / Case: TO-236-3, SC-59, SOT-23-3 Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3W (Tc) |
auf Bestellung 57124 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8116 Stücke - Preis und Lieferfrist anzeigen
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SI4378DY-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 19A 8-SOIC Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V Vgs (Max): ±12V Package / Case: 8-SOIC (0.154", 3.90mm Width) Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V Supplier Device Package: 8-SO Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.6W (Ta) FET Type: N-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 289 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 167809 Stücke - Preis und Lieferfrist anzeigen
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SI7336ADP-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 30A PPAK SO-8 Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5.4W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA |
auf Bestellung 7876 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10170 Stücke - Preis und Lieferfrist anzeigen
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SIZ342DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET DL N-CH 30V POWERPAIR3X3 Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10471 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET DL N-CH 30V POWERPAIR3X3 Power - Max: 3.6W, 4.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) |
auf Bestellung 953 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10471 Stücke - Preis und Lieferfrist anzeigen
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DG212BDQ-T1-E3 |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Base Part Number: DG212 Supplier Device Package: 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -95dB @ 100kHz Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 5pF, 5pF Charge Injection: 1pC Switch Time (Ton, Toff) (Max): 300ns, 200ns Voltage - Supply, Dual (V±): ±4.5V ~ 22V Voltage - Supply, Single (V+): 4.5V ~ 25V Channel-to-Channel Matching (ΔRon): 2Ohm Number of Circuits: 4 On-State Resistance (Max): 85Ohm |
auf Bestellung 6392 Stücke Lieferzeit 21-28 Tag (e) |
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SUP40010EL-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 120A TO220AB Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) |
auf Bestellung 206 Stücke Lieferzeit 21-28 Tag (e) |
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IRF644STRRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 250V 14A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drain to Source Voltage (Vdss): 250V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active |
auf Bestellung 736 Stücke Lieferzeit 21-28 Tag (e) |
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SI2302DDS-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 20V 2.9A SOT23-3 Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 35644 Stücke - Preis und Lieferfrist anzeigen
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SIR158DP-T1-RE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2854 Stücke - Preis und Lieferfrist anzeigen
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| Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2854 Stücke - Preis und Lieferfrist anzeigen
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SQ4532AEY-T1_GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3.3W FET Type: N and P-Channel Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 3.3W FET Type: N and P-Channel Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 560 Stücke Lieferzeit 21-28 Tag (e) |
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SI4532ADY-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N/P-CH 30V 3.7A 8-SOIC Packaging: Cut Tape (CT) Part Status: Obsolete FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Power - Max: 1.13W, 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SISH112DN-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 30V 11.3A PPAK Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): ±12V Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V Power Dissipation (Max): 1.5W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8SH Package / Case: PowerPAK® 1212-8SH Base Part Number: SISH112 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8096 Stücke - Preis und Lieferfrist anzeigen
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IRF830STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 4.5A D2PAK Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7855 Stücke - Preis und Lieferfrist anzeigen
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IRF830ASTRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 500V 5A D2PAK Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel |
auf Bestellung 615 Stücke Lieferzeit 21-28 Tag (e) |
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IRFBG30PBF |
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Vishay Siliconix |
Description: MOSFET N-CH 1000V 3.1A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 14967 Stücke - Preis und Lieferfrist anzeigen
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SI7460DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 11A PPAK SO-8 Base Part Number: SI7460 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.9W (Ta) Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 55356 Stücke Lieferzeit 21-28 Tag (e) |
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IRF740STRRPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2621 Stücke - Preis und Lieferfrist anzeigen
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IRF740ASTRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 400V 10A D2PAK Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 400 V Vgs (Max): ±30V Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
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IRFR120TRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1262 Stücke Lieferzeit 21-28 Tag (e) |
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SI7102DN-T1-E3 |
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Vishay Siliconix |
Description: MOSFET N-CH 12V 35A PPAK 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) Part Status: Obsolete Packaging: Cut Tape (CT) |
auf Bestellung 2770 Stücke Lieferzeit 21-28 Tag (e) |
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SIRB40DP-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK SO8 Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 40V FET Type: 2 N-Channel (Dual) Power - Max: 46.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRFBE30STRLPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A D2PAK Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 780 Stücke - Preis und Lieferfrist anzeigen
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IRFZ34SPBF |
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Vishay Siliconix |
Description: MOSFET N-CH 60V 30A D2PAK Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
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SIP32431DR3-T1GE3 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Input Type: Non-Inverting Rds On (Typ): 147mOhm Current - Output (Max): 1.2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.5V ~ 5.5V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Base Part Number: SIP32431 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Fault Protection: Reverse Current Features: Slew Rate Controlled |
auf Bestellung 63927 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Part Status: Active Fault Protection: Reverse Current Supplier Device Package: SC-70-6 Ratio - Input:Output: 1:1 Current - Output (Max): 1.2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.5V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 147mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-TSSOP, SC-88, SOT-363 Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
auf Bestellung 36172 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Part Status: Active Fault Protection: Reverse Current Supplier Device Package: SC-70-6 Ratio - Input:Output: 1:1 Current - Output (Max): 1.2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.5V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 147mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-TSSOP, SC-88, SOT-363 |
auf Bestellung 33000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHH21N60EF-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 600V 19A PPAK 8 X 8 Drive Voltage (Max Rds On, Min Rds On): 10V Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 174W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 600V 19A PPAK 8 X 8 Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 174W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V |
auf Bestellung 30 Stücke Lieferzeit 21-28 Tag (e) |
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SI1869DH-T1-E3 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Base Part Number: SI1869 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Features: Slew Rate Controlled Rds On (Typ): 132mOhm Current - Output (Max): 1.2A Voltage - Load: 1.8V ~ 20V Interface: On/Off Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 |
auf Bestellung 8593 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5660 Stücke - Preis und Lieferfrist anzeigen
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SIP32510DT-T1-GE3 |
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Vishay Siliconix |
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6 Supplier Device Package: TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Fault Protection: Reverse Current Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 46mOhm Current - Output (Max): 3A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Interface: On/Off Output Type: N-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Part Status: Active Package / Case: SOT-23-6 Thin, TSOT-23-6 |
auf Bestellung 17838 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6 Output Configuration: High Side Ratio - Input:Output: 1:1 Base Part Number: SIP32510 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Fault Protection: Reverse Current Features: Load Discharge, Slew Rate Controlled Input Type: Non-Inverting Rds On (Typ): 46mOhm Current - Output (Max): 3A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Interface: On/Off Output Type: N-Channel Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix |
auf Bestellung 3161 Stücke Lieferzeit 21-28 Tag (e) |
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SI1865DDL-T1-GE3 |
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Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Features: Slew Rate Controlled Rds On (Typ): 165mOhm Current - Output (Max): 1.1A Interface: On/Off Voltage - Load: 1.8V ~ 12V Output Type: P-Channel Output Configuration: High Side Ratio - Input:Output: 1:1 Number of Outputs: 1 Switch Type: General Purpose Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 |
auf Bestellung 11 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6820 Stücke - Preis und Lieferfrist anzeigen
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SIHW61N65EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 64A TO247AD Packaging: Tube Part Status: Active Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3 |
auf Bestellung 457 Stücke Lieferzeit 21-28 Tag (e) |
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SIHG61N65EF-GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 650V 64A TO247AC Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) |
auf Bestellung 426 Stücke Lieferzeit 21-28 Tag (e) |
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| SIHA24N65EF-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 650V 24A TO220
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA24
auf Bestellung 3 Stücke Description: MOSFET N-CHANNEL 650V 24A TO220
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2774pF @ 100V
Power Dissipation (Max): 39W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA24
Lieferzeit 21-28 Tag (e)
| SIHB24N65EF-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 24A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
| SIHG24N65EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 24A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 24A TO247AC
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
| SIHG44N65EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 46A TO247AC
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5892 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W (Tc)
auf Bestellung 5 Stücke Description: MOSFET N-CH 650V 46A TO247AC
Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5892 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 278 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W (Tc)
Lieferzeit 21-28 Tag (e)
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| SIHH14N65EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 15A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
auf Bestellung 100 Stücke - Preis und Lieferfrist anzeigen
| SIHH14N65EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 15A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
auf Bestellung 50 Stücke Description: MOSFET N-CH 650V 15A PPAK 8 X 8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1749 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 271mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
|
| SIHH24N65E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 23A PPAK 8 X 8
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 4948 Stücke - Preis und Lieferfrist anzeigen
| SIHH24N65E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 971 Stücke Description: MOSFET N-CH 650V 23A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 202W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3977 Stücke - Preis und Lieferfrist anzeigen
|
| SIHH24N65EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 650V 23A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHAN 650V 23A POWERPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 12A, 10V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
| SI4463CDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 13.6A/49A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 13.6A/49A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 15 V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
auf Bestellung 7904 Stücke - Preis und Lieferfrist anzeigen
| SIRA88DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Drain to Source Voltage (Vdss): 30V
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
auf Bestellung 2203 Stücke Description: MOSFET N-CH 30V 45.5A POWERPAKSO
Drain to Source Voltage (Vdss): 30V
Base Part Number: SIRA88
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2203 Stücke - Preis und Lieferfrist anzeigen
| SIHFR9310TR-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
| SI9926BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Base Part Number: SI9926
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 20V 6.2A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Base Part Number: SI9926
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.14W
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 27080 Stücke - Preis und Lieferfrist anzeigen
| SIP32509DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 46mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: TSOT-23-6
Fault Protection: Reverse Current
Part Status: Active
| IRF9640STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 11A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 200V 11A D2PAK
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
auf Bestellung 600 Stücke - Preis und Lieferfrist anzeigen
| IRLR024PBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 14A DPAK
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 42W (Tc)
| SIHU5N50D-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO251
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 5.3A TO251
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
| SI2319CDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.4A SOT-23
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2319
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 12037 Stücke Description: MOSFET P-CH 40V 4.4A SOT-23
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2319
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 595pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
| SIHB22N60ET1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO263
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
auf Bestellung 785 Stücke Description: MOSFET N-CH 600V 21A TO263
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Lieferzeit 21-28 Tag (e)
| SIHG22N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 17 Stücke Description: MOSFET N-CH 600V 21A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Lieferzeit 21-28 Tag (e)
| SIHB22N60E-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
auf Bestellung 30 Stücke Description: MOSFET N-CH 600V 21A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Lieferzeit 21-28 Tag (e)
| SIHP22N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 21A TO220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
| SIHG22N60AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
auf Bestellung 469 Stücke Description: MOSFET N-CH 600V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Lieferzeit 21-28 Tag (e)
| SIHB22N60AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A D2PAK
Power Dissipation (Max): 179W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB22
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
auf Bestellung 700 Stücke Description: MOSFET N-CH 600V 20A D2PAK
Power Dissipation (Max): 179W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB22
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
| SIHA22N60AE-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 20A TO220
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA22
auf Bestellung 863 Stücke Description: MOSFET N-CHANNEL 600V 20A TO220
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA22
Lieferzeit 21-28 Tag (e)
| SIHB22N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A D2PAK
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 21A D2PAK
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHB22
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 227W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
| SIHF22N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SIHF22
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 21A TO220
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SIHF22
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1920pF @ 100V
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Vgs(th) (Max) @ Id: 4V @ 250µA
| SIJ438DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 80A PPAK SO-8L
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
auf Bestellung 6000 Stücke Description: MOSFET N-CH 40V 80A PPAK SO-8L
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIJ438
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 16690 Stücke - Preis und Lieferfrist anzeigen
| IRF510STRL |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 5.6A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
| SIHP22N60AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 20A TO220AB
Base Part Number: SIHP22
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 20A TO220AB
Base Part Number: SIHP22
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1451pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Active
| SIHU2N80E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.8A IPAK
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHU2
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
auf Bestellung 3037 Stücke Description: MOSFET N-CH 800V 2.8A IPAK
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHU2
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
| SIHU6N80E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A IPAK
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 5.4A IPAK
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Packaging: Tube
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Mounting Type: Through Hole
| SIHU6N62E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 620V 6A IPAK
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 620V 6A IPAK
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: IPAK (TO-251)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SI2308BDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 24703 Stücke Description: MOSFET N-CH 60V 2.3A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SISS73DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 4.4A/16.2A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 719pF @ 75V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS73
auf Bestellung 3000 Stücke Description: MOSFET P-CH 150V 4.4A/16.2A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 719pF @ 75V
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS73
Lieferzeit 21-28 Tag (e)
auf Bestellung 5010 Stücke - Preis und Lieferfrist anzeigen
| SIHFB11N50A-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 11A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| SUM90220E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 64A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 21.6mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
auf Bestellung 81 Stücke - Preis und Lieferfrist anzeigen
| SUM25P10-138-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.7A TO263
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 16.7A TO263
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
| SQJA68EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
auf Bestellung 3000 Stücke Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
Lieferzeit 21-28 Tag (e)
auf Bestellung 3912 Stücke - Preis und Lieferfrist anzeigen
| SQJA68EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
auf Bestellung 3912 Stücke Description: MOSFET N-CH 100V 14A PPAK SO-8L
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power Dissipation (Max): 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8L
Package / Case: PowerPAK® SO-8L
Base Part Number: SQJA68
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIHB6N80E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V D2PAK TO-263
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V D2PAK TO-263
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
| SI7463DP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SI7463
auf Bestellung 9294 Stücke Description: MOSFET P-CH 40V 11A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SI7463
Lieferzeit 21-28 Tag (e)
| SI7540ADP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH POWERPAK8
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7540
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
auf Bestellung 11084 Stücke Description: MOSFET N/P-CH POWERPAK8
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A, 9A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7540
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Power - Max: 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 251 Stücke - Preis und Lieferfrist anzeigen
| IRFR9310TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 1023 Stücke Description: MOSFET P-CH 400V 1.8A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 7Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SIHH11N65E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 12A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 363mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1257 pF @ 100 V
| SIHH11N65EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 650V 11A PPAK 8 X 8
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3068 Stücke - Preis und Lieferfrist anzeigen
| SIHH11N65EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
auf Bestellung 23 Stücke Description: MOSFET N-CH 650V 11A PPAK 8 X 8
Rds On (Max) @ Id, Vgs: 382mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1243 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3045 Stücke - Preis und Lieferfrist anzeigen
|
| SIR870ADP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
auf Bestellung 3000 Stücke Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
Lieferzeit 21-28 Tag (e)
auf Bestellung 7835 Stücke - Preis und Lieferfrist anzeigen
| SIR870ADP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
auf Bestellung 5140 Stücke Description: MOSFET N-CH 100V 60A POWERPAKSO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2866pF @ 50V
Power Dissipation (Max): 104W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR870
Lieferzeit 21-28 Tag (e)
auf Bestellung 5695 Stücke - Preis und Lieferfrist anzeigen
| DG412DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST TSSOP16
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±15V
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -85dB @ 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST TSSOP16
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Charge Injection: 5pC
Voltage - Supply, Dual (V±): ±15V
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 16-TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -85dB @ 1MHz
auf Bestellung 8116 Stücke - Preis und Lieferfrist anzeigen
| DG413DQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Base Part Number: DG413
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
auf Bestellung 2498 Stücke Description: IC SWITCH QUAD SPST LV 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Base Part Number: DG413
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6131 Stücke - Preis und Lieferfrist anzeigen
| DG419LEDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANALOG SWITCH 8MSOP
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
auf Bestellung 6687 Stücke - Preis und Lieferfrist anzeigen
| DG419LEDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
On-State Resistance (Max): 18Ohm
auf Bestellung 1895 Stücke Description: IC ANALOG SWITCH 8MSOP
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-TSSOP
On-State Resistance (Max): 18Ohm
Lieferzeit 21-28 Tag (e)
auf Bestellung 4792 Stücke - Preis und Lieferfrist anzeigen
|
| DG419LEDY-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
auf Bestellung 12500 Stücke Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Multiplexer/Demultiplexer Circuit: 1:2
Switch Circuit: SPDT
Crosstalk: -72dB @ 1MHz
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 14591 Stücke - Preis und Lieferfrist anzeigen
|
| DG419LEDY-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
auf Bestellung 14591 Stücke Description: IC ANALOG SWITCH 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 10nA
Channel Capacitance (CS(off), CD(off)): 6pF, 20pF
Crosstalk: -72dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Switch Time (Ton, Toff) (Max): 40ns, 35ns
Charge Injection: 26pC
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
Supplier Device Package: 8-SO
On-State Resistance (Max): 18Ohm
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 12500 Stücke - Preis und Lieferfrist anzeigen
|
| SQ2318AES-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V
Vgs (Max): ±20V
Base Part Number: SQ2318
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
auf Bestellung 57124 Stücke Description: MOSFET N-CHAN 40V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 10V
Vgs (Max): ±20V
Base Part Number: SQ2318
Package / Case: TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 8116 Stücke - Preis und Lieferfrist anzeigen
| SI4378DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 289 Stücke Description: MOSFET N-CH 20V 19A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 10V
Vgs (Max): ±12V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 4.5V
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 167809 Stücke - Preis und Lieferfrist anzeigen
| SI7336ADP-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 7876 Stücke Description: MOSFET N-CH 30V 30A PPAK SO-8
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Lieferzeit 21-28 Tag (e)
auf Bestellung 10170 Stücke - Preis und Lieferfrist anzeigen
| SIZ342DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET DL N-CH 30V POWERPAIR3X3
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 11424 Stücke - Preis und Lieferfrist anzeigen
| SIZ342DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DL N-CH 30V POWERPAIR3X3
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
auf Bestellung 953 Stücke Description: MOSFET DL N-CH 30V POWERPAIR3X3
Power - Max: 3.6W, 4.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 10471 Stücke - Preis und Lieferfrist anzeigen
|
| DG212BDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG212
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
Number of Circuits: 4
On-State Resistance (Max): 85Ohm
auf Bestellung 6392 Stücke Description: IC SWITCH QUAD SPST 16TSSOP
Base Part Number: DG212
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
Number of Circuits: 4
On-State Resistance (Max): 85Ohm
Lieferzeit 21-28 Tag (e)
| SUP40010EL-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO220AB
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
auf Bestellung 206 Stücke Description: MOSFET N-CH 40V 120A TO220AB
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Lieferzeit 21-28 Tag (e)
|
| IRF644STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
auf Bestellung 736 Stücke Description: MOSFET N-CH 250V 14A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SI2302DDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.9A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 20V 2.9A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 35644 Stücke - Preis und Lieferfrist anzeigen
| SIR158DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 60A PPAK SO-8
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
auf Bestellung 2855 Stücke - Preis und Lieferfrist anzeigen
| SIR158DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
auf Bestellung 1 Stücke Description: MOSFET N-CH 30V 60A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 2854 Stücke - Preis und Lieferfrist anzeigen
| SQ4532AEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 560 Stücke - Preis und Lieferfrist anzeigen
| SQ4532AEY-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 560 Stücke Description: MOSFET N/P-CH 30V 7.3/5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 3.3W
FET Type: N and P-Channel
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Lieferzeit 21-28 Tag (e)
| SI4532ADY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Power - Max: 1.13W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N/P-CH 30V 3.7A 8-SOIC
Packaging: Cut Tape (CT)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Power - Max: 1.13W, 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
| SISH112DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
Lieferzeit 21-28 Tag (e)
auf Bestellung 8096 Stücke - Preis und Lieferfrist anzeigen
| IRF830STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 4.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Cut Tape (CT)
auf Bestellung 7855 Stücke - Preis und Lieferfrist anzeigen
| IRF830ASTRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
auf Bestellung 615 Stücke Description: MOSFET N-CH 500V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Lieferzeit 21-28 Tag (e)
|
| IRFBG30PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 1000V 3.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 3.1A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 14967 Stücke - Preis und Lieferfrist anzeigen
| SI7460DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Base Part Number: SI7460
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 55356 Stücke Description: MOSFET N-CH 60V 11A PPAK SO-8
Base Part Number: SI7460
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Lieferzeit 21-28 Tag (e)
| IRF740STRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 10A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2621 Stücke - Preis und Lieferfrist anzeigen
| IRF740ASTRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 400V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 440 Stücke - Preis und Lieferfrist anzeigen
| IRFR120TRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1262 Stücke Description: MOSFET N-CH 100V 7.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
| SI7102DN-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 2770 Stücke Description: MOSFET N-CH 12V 35A PPAK 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 6V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| SIRB40DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 46.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2 N-CH 40V POWERPAK SO8
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 46.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
| IRFBE30STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.1A D2PAK
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 4.1A D2PAK
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
auf Bestellung 780 Stücke - Preis und Lieferfrist anzeigen
| IRFZ34SPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 30A D2PAK
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 30A D2PAK
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 4200 Stücke - Preis und Lieferfrist anzeigen
| SIP32431DR3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Base Part Number: SIP32431
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
auf Bestellung 63927 Stücke Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Base Part Number: SIP32431
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Lieferzeit 21-28 Tag (e)
auf Bestellung 69172 Stücke - Preis und Lieferfrist anzeigen
| SIP32431DR3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 36172 Stücke Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 96927 Stücke - Preis und Lieferfrist anzeigen
|
| SIP32431DR3-T1GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
auf Bestellung 33000 Stücke Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Fault Protection: Reverse Current
Supplier Device Package: SC-70-6
Ratio - Input:Output: 1:1
Current - Output (Max): 1.2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 147mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-TSSOP, SC-88, SOT-363
Lieferzeit 21-28 Tag (e)
auf Bestellung 100099 Stücke - Preis und Lieferfrist anzeigen
|
| SIHH21N60EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 600V 19A PPAK 8 X 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
| SIHH21N60EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
auf Bestellung 30 Stücke Description: MOSFET N-CH 600V 19A PPAK 8 X 8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Lieferzeit 21-28 Tag (e)
|
| SI1869DH-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Base Part Number: SI1869
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 132mOhm
Current - Output (Max): 1.2A
Voltage - Load: 1.8V ~ 20V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
auf Bestellung 8593 Stücke Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Base Part Number: SI1869
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 132mOhm
Current - Output (Max): 1.2A
Voltage - Load: 1.8V ~ 20V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Lieferzeit 21-28 Tag (e)
auf Bestellung 5660 Stücke - Preis und Lieferfrist anzeigen
| SIP32510DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
auf Bestellung 17838 Stücke Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: SOT-23-6 Thin, TSOT-23-6
Lieferzeit 21-28 Tag (e)
auf Bestellung 3161 Stücke - Preis und Lieferfrist anzeigen
| SIP32510DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Output Configuration: High Side
Ratio - Input:Output: 1:1
Base Part Number: SIP32510
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 3161 Stücke Description: IC PWR SWTCH N-CHAN 1:1 TSOT23-6
Output Configuration: High Side
Ratio - Input:Output: 1:1
Base Part Number: SIP32510
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 46mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Lieferzeit 21-28 Tag (e)
auf Bestellung 17838 Stücke - Preis und Lieferfrist anzeigen
| SI1865DDL-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 165mOhm
Current - Output (Max): 1.1A
Interface: On/Off
Voltage - Load: 1.8V ~ 12V
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
auf Bestellung 11 Stücke Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Features: Slew Rate Controlled
Rds On (Typ): 165mOhm
Current - Output (Max): 1.1A
Interface: On/Off
Voltage - Load: 1.8V ~ 12V
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Lieferzeit 21-28 Tag (e)
auf Bestellung 6820 Stücke - Preis und Lieferfrist anzeigen
| SIHW61N65EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AD
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
auf Bestellung 457 Stücke Description: MOSFET N-CH 650V 64A TO247AD
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 371nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7407pF @ 100V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Lieferzeit 21-28 Tag (e)
| SIHG61N65EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 64A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
auf Bestellung 426 Stücke Description: MOSFET N-CH 650V 64A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 7407 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 371 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 30.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Lieferzeit 21-28 Tag (e)
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