Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10948) > Seite 87 nach 183
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SUP36N20-54P-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 36A TO220AB |
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SUP40N10-30-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 38.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.5A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
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SUP40P10-43-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 100V 36A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
Produkt ist nicht verfügbar |
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SUP45N03-13L-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 45A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 45A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
Produkt ist nicht verfügbar |
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SUP53P06-20-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 9.2A/53A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
auf Bestellung 3506 Stücke: Lieferzeit 21-28 Tag (e) |
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SUP57N20-33-E3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 57A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V |
auf Bestellung 416 Stücke: Lieferzeit 21-28 Tag (e) |
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SUP60N02-4M5P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 10 V |
Produkt ist nicht verfügbar |
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SUP60N06-12P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 60A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Power Dissipation (Max): 3.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 30 V |
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SUP60N06-12P-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V Power Dissipation (Max): 3.25W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 30 V |
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SUP60N10-16L-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 60A TO220AB |
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SUP60N10-18P-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 60A TO220AB |
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SUP65P04-15-E3 | Vishay Siliconix | Description: MOSFET P-CH 40V 65A TO220AB |
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SUP75P03-07-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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SUP85N02-03-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 450mV @ 2mA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V |
Produkt ist nicht verfügbar |
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SUP85N03-04P-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
Produkt ist nicht verfügbar |
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SUP85N04-03-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 85A TO220AB |
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SUP85N10-10P-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V |
Produkt ist nicht verfügbar |
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SUP90N03-03-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 28.8A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V |
Produkt ist nicht verfügbar |
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SUP90N08-4M8P-E3 | Vishay Siliconix | Description: MOSFET N-CH D-S 75V TO220AB |
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SUP90N08-6M8P-E3 | Vishay Siliconix | Description: MOSFET N-CH 75V 90A TO220AB |
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SUP90N08-7M7P-E3 | Vishay Siliconix | Description: MOSFET N-CH 75V 90A TO220AB |
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SUP90N08-8M2P-E3 | Vishay Siliconix | Description: MOSFET N-CH D-S 75V TO220AB |
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SUP90N10-8M8P-E3 | Vishay Siliconix | Description: MOSFET N-CH D-S 100V TO220AB |
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SUP90N15-18P-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 90A TO220AB |
Produkt ist nicht verfügbar |
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SUP90P06-09L-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
auf Bestellung 2436 Stücke: Lieferzeit 21-28 Tag (e) |
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SUV85N10-10-E3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V |
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SY3443BDV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH D-S 2.5V D2PAK |
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SY3469DV-T1-E3 | Vishay Siliconix | Description: MOSFET P-CH D-S 20V D2PAK |
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SYM110N04-03-E3 | Vishay Siliconix | Description: MOSFET N-CH D-S 40V |
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TN2404K-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 240V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TP0101K-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH D-S 20V TO236 |
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TP0202K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 385MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 385mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V |
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TP0610K-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 185MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4936CDY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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SI4176DY-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 12A 8SO |
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SI4178DY-T1-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 12A 8SO |
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Si4228DY-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 25V 8A 8SO |
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SI4276DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.6W, 2.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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SI4804CDY-T1-E3 | Vishay Siliconix | Description: MOSFET 2N-CH 30V 8A 8SO |
Produkt ist nicht verfügbar |
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SIHG47N60S-E3 | Vishay Siliconix | Description: MOSFET N-CH 600V 47A TO247AC |
auf Bestellung 330 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32411DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32411DR-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6 Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 101mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32431DNP3-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 105mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 219000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32431DR3-T1GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Features: Slew Rate Controlled Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 147mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 78000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1315DL-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 900MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V Power Dissipation (Max): 300mW (Ta), 400mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-70-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V |
Produkt ist nicht verfügbar |
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SI5457DC-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 6A 1206-8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V Power Dissipation (Max): 5.7W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 1206-8 ChipFET™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32411DNP-T1-GE4 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-UFDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 62mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 11639 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32411DR-T1-GE3 | Vishay Siliconix |
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6 Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 101mOhm Input Type: Non-Inverting Voltage - Load: 1.1V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 25443 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32431DR3-T1GE3 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6 Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 147mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.2A Ratio - Input:Output: 1:1 Supplier Device Package: SC-70-6 Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 78755 Stücke: Lieferzeit 21-28 Tag (e) |
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SIP32431DNP3-T1GE4 | Vishay Siliconix |
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 4-UFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 105mOhm Input Type: Non-Inverting Voltage - Load: 1.5V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: 4-TDFN (1.2x1.6) Fault Protection: Reverse Current Part Status: Active |
auf Bestellung 227209 Stücke: Lieferzeit 21-28 Tag (e) |
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SQD50N04-09H-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V |
Produkt ist nicht verfügbar |
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SQJ412EP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 32A PPAK SO-8 |
auf Bestellung 1253 Stücke: Lieferzeit 21-28 Tag (e) |
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SQJ412EP-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 32A PPAK SO-8 |
auf Bestellung 1253 Stücke: Lieferzeit 21-28 Tag (e) |
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DG721DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 366MHz Supplier Device Package: 8-MSOP Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 2.2pC Crosstalk: -90dB @ 10MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG723DQ-T1-GE3 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 366MHz Supplier Device Package: 8-MSOP Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 2.2pC Crosstalk: -90dB @ 10MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 2 |
auf Bestellung 38 Stücke: Lieferzeit 21-28 Tag (e) |
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DG9236DN-T1-E4 | Vishay Siliconix | Description: IC ANLG SWITCH DUAL SPST 10QFN |
Produkt ist nicht verfügbar |
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DG9253EN-T1-E4 | Vishay Siliconix |
Description: IC MULTIPLEXER TRPL 2-CH 16QFN Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 182Ohm -3db Bandwidth: 480MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 16V Voltage - Supply, Dual (V±): ±2.7V ~ 5V Charge Injection: 4.1pC Crosstalk: -67dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 3.1Ohm Switch Time (Ton, Toff) (Max): 250ns, 125ns Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Obsolete Number of Circuits: 3 |
Produkt ist nicht verfügbar |
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DG721DQ-T1-GE3 | Vishay Siliconix |
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 366MHz Supplier Device Package: 8-MSOP Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 2.2pC Crosstalk: -90dB @ 10MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG723DQ-T1-GE3 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 4.5Ohm -3db Bandwidth: 366MHz Supplier Device Package: 8-MSOP Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 2.2pC Crosstalk: -90dB @ 10MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 200mOhm Switch Time (Ton, Toff) (Max): 30ns, 35ns Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG9236DN-T1-E4 | Vishay Siliconix | Description: IC ANLG SWITCH DUAL SPST 10QFN |
Produkt ist nicht verfügbar |
SUP36N20-54P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 36A TO220AB
Description: MOSFET N-CH 200V 36A TO220AB
Produkt ist nicht verfügbar
SUP40N10-30-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 38.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 100V 38.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
SUP40P10-43-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Description: MOSFET P-CH 100V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Produkt ist nicht verfügbar
SUP45N03-13L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 45A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 45A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET N-CH 30V 45A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 45A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Produkt ist nicht verfügbar
SUP53P06-20-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET P-CH 60V 9.2A/53A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.1W (Ta), 104.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 3506 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.73 EUR |
50+ | 5.33 EUR |
100+ | 4.57 EUR |
500+ | 4.06 EUR |
1000+ | 3.48 EUR |
2000+ | 3.28 EUR |
SUP57N20-33-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Description: MOSFET N-CH 200V 57A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
auf Bestellung 416 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 10.82 EUR |
50+ | 8.55 EUR |
100+ | 7.33 EUR |
SUP60N02-4M5P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 10 V
Description: MOSFET N-CH 20V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 10 V
Produkt ist nicht verfügbar
SUP60N06-12P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 3.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 30 V
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 3.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 30 V
Produkt ist nicht verfügbar
SUP60N06-12P-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 3.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 30 V
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 30A, 10V
Power Dissipation (Max): 3.25W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1970 pF @ 30 V
Produkt ist nicht verfügbar
SUP60N10-16L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO220AB
Description: MOSFET N-CH 100V 60A TO220AB
Produkt ist nicht verfügbar
SUP60N10-18P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO220AB
Description: MOSFET N-CH 100V 60A TO220AB
Produkt ist nicht verfügbar
SUP65P04-15-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 65A TO220AB
Description: MOSFET P-CH 40V 65A TO220AB
Produkt ist nicht verfügbar
SUP75P03-07-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET P-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
SUP85N02-03-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 450mV @ 2mA (Min)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V
Description: MOSFET N-CH 20V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 4.5V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 450mV @ 2mA (Min)
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21250 pF @ 20 V
Produkt ist nicht verfügbar
SUP85N03-04P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Description: MOSFET N-CH 30V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
SUP85N04-03-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 85A TO220AB
Description: MOSFET N-CH 40V 85A TO220AB
Produkt ist nicht verfügbar
SUP85N10-10P-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4660 pF @ 50 V
Produkt ist nicht verfügbar
SUP90N03-03-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 28.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
Description: MOSFET N-CH 30V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 28.8A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V
Produkt ist nicht verfügbar
SUP90N08-4M8P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO220AB
Description: MOSFET N-CH D-S 75V TO220AB
Produkt ist nicht verfügbar
SUP90N08-6M8P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO220AB
Description: MOSFET N-CH 75V 90A TO220AB
Produkt ist nicht verfügbar
SUP90N08-7M7P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A TO220AB
Description: MOSFET N-CH 75V 90A TO220AB
Produkt ist nicht verfügbar
SUP90N08-8M2P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 75V TO220AB
Description: MOSFET N-CH D-S 75V TO220AB
Produkt ist nicht verfügbar
SUP90N10-8M8P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 100V TO220AB
Description: MOSFET N-CH D-S 100V TO220AB
Produkt ist nicht verfügbar
SUP90N15-18P-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 90A TO220AB
Description: MOSFET N-CH 150V 90A TO220AB
Produkt ist nicht verfügbar
SUP90P06-09L-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Description: MOSFET P-CH 60V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
auf Bestellung 2436 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.84 EUR |
50+ | 10.18 EUR |
100+ | 8.73 EUR |
500+ | 7.76 EUR |
1000+ | 6.64 EUR |
2000+ | 6.26 EUR |
SUV85N10-10-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Description: MOSFET N-CH 100V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V
Produkt ist nicht verfügbar
SY3443BDV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 2.5V D2PAK
Description: MOSFET P-CH D-S 2.5V D2PAK
Produkt ist nicht verfügbar
SY3469DV-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V D2PAK
Description: MOSFET P-CH D-S 20V D2PAK
Produkt ist nicht verfügbar
SYM110N04-03-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V
Description: MOSFET N-CH D-S 40V
Produkt ist nicht verfügbar
TN2404K-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.79 EUR |
TP0101K-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH D-S 20V TO236
Description: MOSFET P-CH D-S 20V TO236
Produkt ist nicht verfügbar
TP0202K-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 385MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Description: MOSFET P-CH 30V 385MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Produkt ist nicht verfügbar
TP0610K-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.31 EUR |
6000+ | 0.29 EUR |
9000+ | 0.26 EUR |
SI4936CDY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 5.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4176DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Description: MOSFET N-CH 30V 12A 8SO
Produkt ist nicht verfügbar
SI4178DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Description: MOSFET N-CH 30V 12A 8SO
Produkt ist nicht verfügbar
Si4228DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8SO
Description: MOSFET 2N-CH 25V 8A 8SO
Produkt ist nicht verfügbar
SI4276DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W, 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 30V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W, 2.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
SI4804CDY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Description: MOSFET 2N-CH 30V 8A 8SO
Produkt ist nicht verfügbar
SIHG47N60S-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 47A TO247AC
Description: MOSFET N-CH 600V 47A TO247AC
auf Bestellung 330 Stücke:
Lieferzeit 21-28 Tag (e)SIP32411DNP-T1-GE4 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.51 EUR |
6000+ | 0.48 EUR |
SIP32411DR-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.85 EUR |
6000+ | 0.79 EUR |
15000+ | 0.76 EUR |
SIP32431DNP3-T1GE4 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 219000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.61 EUR |
6000+ | 0.56 EUR |
15000+ | 0.54 EUR |
30000+ | 0.52 EUR |
SIP32431DR3-T1GE3 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 78000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.61 EUR |
6000+ | 0.56 EUR |
15000+ | 0.54 EUR |
30000+ | 0.52 EUR |
SI1315DL-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Description: MOSFET P-CH 8V 900MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 336mOhm @ 800mA, 4.5V
Power Dissipation (Max): 300mW (Ta), 400mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 4 V
Produkt ist nicht verfügbar
SI5457DC-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Description: MOSFET P-CH 20V 6A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.9A, 4.5V
Power Dissipation (Max): 5.7W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.45 EUR |
6000+ | 0.42 EUR |
9000+ | 0.39 EUR |
SIP32411DNP-T1-GE4 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 62mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 11639 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.46 EUR |
21+ | 1.24 EUR |
25+ | 1.16 EUR |
100+ | 0.93 EUR |
250+ | 0.86 EUR |
500+ | 0.73 EUR |
1000+ | 0.56 EUR |
SIP32411DR-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 SC70-6
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 101mOhm
Input Type: Non-Inverting
Voltage - Load: 1.1V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 25443 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.18 EUR |
14+ | 1.93 EUR |
25+ | 1.81 EUR |
100+ | 1.48 EUR |
250+ | 1.38 EUR |
500+ | 1.17 EUR |
1000+ | 0.94 EUR |
SIP32431DR3-T1GE3 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 SC70-6
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 147mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: SC-70-6
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 78755 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.56 EUR |
19+ | 1.38 EUR |
25+ | 1.3 EUR |
100+ | 1.06 EUR |
250+ | 0.98 EUR |
500+ | 0.84 EUR |
1000+ | 0.67 EUR |
SIP32431DNP3-T1GE4 |
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
Description: IC PWR SWITCH P-CHAN 1:1 4TDFN
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 1.5V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-TDFN (1.2x1.6)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 227209 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.56 EUR |
19+ | 1.38 EUR |
25+ | 1.3 EUR |
100+ | 1.06 EUR |
250+ | 0.98 EUR |
500+ | 0.84 EUR |
1000+ | 0.67 EUR |
SQD50N04-09H-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Description: MOSFET N-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V
Produkt ist nicht verfügbar
SQJ412EP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 21-28 Tag (e)SQJ412EP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32A PPAK SO-8
Description: MOSFET N-CH 40V 32A PPAK SO-8
auf Bestellung 1253 Stücke:
Lieferzeit 21-28 Tag (e)DG721DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
DG723DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
auf Bestellung 38 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.37 EUR |
10+ | 3.7 EUR |
25+ | 3.46 EUR |
DG9236DN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH DUAL SPST 10QFN
Description: IC ANLG SWITCH DUAL SPST 10QFN
Produkt ist nicht verfügbar
DG9253EN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 480MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 3
Description: IC MULTIPLEXER TRPL 2-CH 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 182Ohm
-3db Bandwidth: 480MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 16V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 4.1pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3.1Ohm
Switch Time (Ton, Toff) (Max): 250ns, 125ns
Channel Capacitance (CS(off), CD(off)): 2pF, 4.6pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 3
Produkt ist nicht verfügbar
DG721DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SPST-NOX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
DG723DQ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
Description: IC SW SPST-NO/NCX2 4.5OHM 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 4.5Ohm
-3db Bandwidth: 366MHz
Supplier Device Package: 8-MSOP
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 2.2pC
Crosstalk: -90dB @ 10MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 200mOhm
Switch Time (Ton, Toff) (Max): 30ns, 35ns
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
DG9236DN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH DUAL SPST 10QFN
Description: IC ANLG SWITCH DUAL SPST 10QFN
Produkt ist nicht verfügbar