Die Produkte vishay siliconix

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SI4401DDY-T1-GE3 SI4401DDY-T1-GE3 si4401dd.pdf Vishay Siliconix Description: MOSFET P-CH 40V 16.1A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4401
auf Bestellung 4403 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 371829 Stücke - Preis und Lieferfrist anzeigen
SIHU4N80E-GE3 SIHU4N80E-GE3 sihu4n80e.pdf Vishay Siliconix Description: MOSFET N-CHAN 800V TO-251
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Base Part Number: SIHU4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB4N80E-GE3 sihb4n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V D2PAK TO-263
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP4N80E-GE3 SIHP4N80E-GE3 sihp4n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.3A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHP4
Package / Case: TO-220-3
auf Bestellung 983 Stücke
Lieferzeit 21-28 Tag (e)
SIHA4N80E-GE3 SIHA4N80E-GE3 siha4n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 4.3A TO220
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA4
Package / Case: TO-220-3 Full Pack
auf Bestellung 965 Stücke
Lieferzeit 21-28 Tag (e)
SIA110DJ-T1-GE3 SIA110DJ-T1-GE3 sia110dj.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.4A/12A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA110
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5588 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET N-CH 100V 5.4A/12A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA110
auf Bestellung 2184 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5588 Stücke - Preis und Lieferfrist anzeigen
SISH112DN-T1-GE3 SISH112DN-T1-GE3 sish112dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
auf Bestellung 4046 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7050 Stücke - Preis und Lieferfrist anzeigen
SI4463BDY-T1-GE3 SI4463BDY-T1-GE3 si4463bd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 9.8A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Base Part Number: SI4463
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
auf Bestellung 1611 Stücke
Lieferzeit 21-28 Tag (e)
SIRA20DP-T1-RE3 SIRA20DP-T1-RE3 sira20dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 81.7A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3549 Stücke - Preis und Lieferfrist anzeigen
SIR800ADP-T1-GE3 SIR800ADP-T1-GE3 sir800adp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 50.2A/177A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR800ADP-T1-RE3 SIR800ADP-T1-RE3 sir800adp.pdf Vishay Siliconix Description: MOSFET N-CH 20V POWERPAK SO8 SNG
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 20V 50.2A/177A PPAK
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: PowerPAK® SO-8
auf Bestellung 1450 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.34 EUR
13+ 2.07 EUR
100+ 1.59 EUR
500+ 1.26 EUR
1000+ 1.01 EUR
SIR800DP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 20V 50A POWERPAKSO-8
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 10V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7686DP-T1-GE3 SI7686DP-T1-GE3 73451.pdf Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 622 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
7+ 4 EUR
10+ 3.61 EUR
100+ 2.9 EUR
500+ 2.38 EUR
SIHD6N65ET1-GE3 SIHD6N65ET1-GE3 sihd6n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1403BDL-T1-GE3 SI1403BDL-T1-GE3 si1403bdl.pdf Vishay Siliconix Description: MOSFET P-CH 20V 1.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13252 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: MOSFET P-CH 20V 1.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 73 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13252 Stücke - Preis und Lieferfrist anzeigen
SI5441BDC-T1-GE3 SI5441BDC-T1-GE3 73207.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.4A 1206-8
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2995 Stücke
Lieferzeit 21-28 Tag (e)
SI4634DY-T1-E3 SI4634DY-T1-E3 si4634dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 24.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 77700 Stücke - Preis und Lieferfrist anzeigen
6+ 4.5 EUR
10+ 4.03 EUR
100+ 3.24 EUR
500+ 2.66 EUR
1000+ 2.28 EUR
SQJA04EP-T1_GE3 SQJA04EP-T1_GE3 sqja04ep.pdf Vishay Siliconix Description: MOSFET N-CH 60V 75A POWERPAKSO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
auf Bestellung 3445 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 60V 75A POWERPAKSO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
2N6660JAN02 2N6660JAN02 Vishay Siliconix Description: MOSFET JFET N-CH
Manufacturer: Vishay Siliconix
Packaging: Bulk
Part Status: Obsolete
Base Part Number: 2N6660
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510STRLPBF IRL510STRLPBF sihf510s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.6A D2PAK
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 751 Stücke - Preis und Lieferfrist anzeigen
SIR120DP-T1-RE3 SIR120DP-T1-RE3 sir120dp.pdf Vishay Siliconix Description: MOSFET N-CH 80V 24.7A/106A PPAK
Base Part Number: SIR120
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5900 Stücke - Preis und Lieferfrist anzeigen
SQA401EJ-T1_GE3 SQA401EJ-T1_GE3 sqa401ej.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.75A SC70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Base Part Number: SQA401
Package / Case: PowerPAK® SC-70-6
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 3.75A SC70-6
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Base Part Number: SQA401
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
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Lieferzeit 21-28 Tag (e)
DG2523DN-T1-GE4 DG2523DN-T1-GE4 dg2523.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 16QFN
On-State Resistance (Max): 550mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -19pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 310MHz
auf Bestellung 1869 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.43 EUR
10+ 3.05 EUR
25+ 2.9 EUR
100+ 2.38 EUR
250+ 2.22 EUR
500+ 1.97 EUR
1000+ 1.61 EUR
DG2525DN-T1-GE4 DG2525DN-T1-GE4 dg2525.pdf Vishay Siliconix Description: IC SWITCH DUAL DPDT 16-MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -19pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 310MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2801 Stücke - Preis und Lieferfrist anzeigen
SI4946CDY-T1-GE3 SI4946CDY-T1-GE3 si4946cdy.pdf Vishay Siliconix Description: MOSFET N-CHAN DUAL 60V SO-8
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2002EDL-T1-GE3 DG2002EDL-T1-GE3 dg2002e.pdf Vishay Siliconix Description: IC ANALOG SWITCH SPDT SC-70-6
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1.5nA
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Base Part Number: DG2002
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3102 Stücke - Preis und Lieferfrist anzeigen
Vishay Siliconix Description: IC ANALOG SWITCH SPDT SC-70-6
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1.5nA
Base Part Number: DG2002
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2230 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3102 Stücke - Preis und Lieferfrist anzeigen
SIHF065N60E-GE3 SIHF065N60E-GE3 sihf065n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 40A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 347 Stücke
Lieferzeit 21-28 Tag (e)
2+ 16.93 EUR
10+ 15.29 EUR
100+ 12.66 EUR
SIHF7N60E-GE3 SIHF7N60E-GE3 sihf7n60e.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 600V 7A TO220
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CHANNEL 600V 7A TO220
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 959 Stücke
Lieferzeit 21-28 Tag (e)
SIHFS11N50A-GE3 SIHFS11N50A-GE3 91286.pdf Vishay Siliconix Description: MOSFET N-CH 500V 11A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA62DP-T1-RE3 SIRA62DP-T1-RE3 sira62dp.pdf Vishay Siliconix Description: MOSFET N-CHAN 30V
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V 51.4A/80A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.67 EUR
10+ 3.29 EUR
V30406-T1-GE3 Vishay Siliconix Description: MOSFET N-CH SMD
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V30408-T1-GE3 Vishay Siliconix Description: MOSFET N-CH SMD
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32402ADNP-T1GE4 SIP32402ADNP-T1GE4 sip32401a.pdf Vishay Siliconix Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Base Part Number: SIP3240*A
Package / Case: 4-UFDFN Exposed Pad
auf Bestellung 14197 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
DG333ADW-T1-E3 DG333ADW-T1-E3 dg333a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPDT 20SOIC
Base Part Number: DG333
Supplier Device Package: 20-SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -80dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
On-State Resistance (Max): 45Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1004 Stücke
Lieferzeit 21-28 Tag (e)
DG3257DN-T1-GE4 DG3257DN-T1-GE4 dg3257.pdf Vishay Siliconix Description: IC ANALOG SWITCH 6UDFN
Base Part Number: DG3257
Supplier Device Package: 6-UDFN (1x1)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -32dB @ 240MHz
Channel Capacitance (CS(off), CD(off)): 3pF, 9pF
Charge Injection: 4pC
-3db Bandwidth: 714MHz
Switch Time (Ton, Toff) (Max): 50ns, 45ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: IC ANALOG SWITCH 6UDFN
Base Part Number: DG3257
Supplier Device Package: 6-UDFN (1x1)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -32dB @ 240MHz
Channel Capacitance (CS(off), CD(off)): 3pF, 9pF
Charge Injection: 4pC
-3db Bandwidth: 714MHz
Switch Time (Ton, Toff) (Max): 50ns, 45ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3941 Stücke
Lieferzeit 21-28 Tag (e)
DG309BDY-T1-E3 DG309BDY-T1-E3 dg308b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG309DY-T1-E3 DG309DY-T1-E3 dg308a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST/CMOS 16SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
auf Bestellung 7414 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
4+ 7.41 EUR
10+ 6.66 EUR
25+ 6.28 EUR
100+ 5.35 EUR
250+ 5.03 EUR
500+ 4.4 EUR
1000+ 3.91 EUR
DG333ALDW-T1-E3 DG333ALDW-T1-E3 dg333a.pdf Vishay Siliconix Description: IC SWITCH QUAD SPDT 20SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Supplier Device Package: 20-SOIC
On-State Resistance (Max): 45Ohm
auf Bestellung 691 Stücke
Lieferzeit 21-28 Tag (e)
SIHG47N60AE-GE3 SIHG47N60AE-GE3 sihg47n60ae.pdf Vishay Siliconix Description: MOSFET N-CH 600V 43A TO247AC
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Packaging: Tube
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
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SIHG120N60E-GE3 SIHG120N60E-GE3 sihg120n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 25A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SIHG120
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1562pF @ 100V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP120N60E-GE3 SIHP120N60E-GE3 sihp120n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 25A TO220AB
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 393 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.1 EUR
10+ 11.75 EUR
100+ 9.63 EUR
SIHD6N80E-GE3 SIHD6N80E-GE3 sihd6n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 5.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
auf Bestellung 2910 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.41 EUR
10+ 4.86 EUR
100+ 3.9 EUR
500+ 3.21 EUR
1000+ 2.75 EUR
SIHP6N80E-GE3 SIHP6N80E-GE3 sihp6n80e.pdf Vishay Siliconix Description: MOSFET N-CHAN 800V TO-220AB
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA6N80E-GE3 SIHA6N80E-GE3 siha6n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 5.4A TO220
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
auf Bestellung 985 Stücke
Lieferzeit 21-28 Tag (e)
SI4048DY-T1-GE3 SI4048DY-T1-GE3 si4048dy.pdf Vishay Siliconix Description: MOSFET N-CH 30V 19.3A 8SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
auf Bestellung 2262 Stücke
Lieferzeit 21-28 Tag (e)
DG403DY-T1-E3 DG403DY-T1-E3 dg401.pdf Vishay Siliconix Description: IC SWITCH DUAL SPDT 16SOIC
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG403
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±5V ~ 17V
Voltage - Supply, Single (V+): 5V ~ 34V
Channel-to-Channel Matching (ΔRon): 3Ohm
On-State Resistance (Max): 45Ohm
auf Bestellung 5301 Stücke
Lieferzeit 21-28 Tag (e)
SQD50P04-13L_GE3 SQD50P04-13L_GE3 sqd50p04-13l.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
auf Bestellung 5386 Stücke
Lieferzeit 21-28 Tag (e)
SIC779ACD-T1-GE3 SIC779ACD-T1-GE3 sic769ac.pdf Vishay Siliconix Description: IC CTLR PFC STAGE PPAK MLP66-40
Base Part Number: SIC779
Supplier Device Package: PowerPAK® MLP66-40
Package / Case: Out of Bounds
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3V ~ 16V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 35A
Technology: DrMOS
auf Bestellung 2880 Stücke
Lieferzeit 21-28 Tag (e)
IRFR9014TRLPBF IRFR9014TRLPBF sihfr901.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.1A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1975 Stücke - Preis und Lieferfrist anzeigen
IRFR024TRPBF IRFR024TRPBF 91264.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
auf Bestellung 2004 Stücke
Lieferzeit 21-28 Tag (e)
IRFR024TRLPBF IRFR024TRLPBF 91264.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2685 Stücke
Lieferzeit 21-28 Tag (e)
SI5948DU-T1-GE3 SI5948DU-T1-GE3 si5948du.pdf Vishay Siliconix Description: MOSFET 2 N-CH 40V 6A POWERPAK
Part Status: Active
Supplier Device Package: PowerPAK® ChipFet Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET 2 N-CH 40V 6A POWERPAK
Part Status: Active
Supplier Device Package: PowerPAK® ChipFet Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Dual
Packaging: Cut Tape (CT)
auf Bestellung 2601 Stücke
Lieferzeit 21-28 Tag (e)
SQM100N10-10_GE3 SQM100N10-10_GE3 sqm100n1.pdf Vishay Siliconix Description: MOSFET N-CH 100V 100A TO-263
Base Part Number: SQM100N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 673 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 235 Stücke - Preis und Lieferfrist anzeigen
SIHP28N65E-GE3 SIHP28N65E-GE3 sihp28n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 29A TO220AB
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 112mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3405pF @ 100V
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD40N10-25_GE3 SQD40N10-25_GE3 sqd40n10-25.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N62ET1-GE3 SIHD6N62ET1-GE3 sihd6n62e.pdf Vishay Siliconix Description: MOSFET N-CH 620V 6A TO252AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD2N80E-GE3 SIHD2N80E-GE3 sihd2n80e.pdf Vishay Siliconix Description: MOSFET N-CH 800V 2.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.59 EUR
10+ 3.2 EUR
SIHD6N62E-GE3 SIHD6N62E-GE3 sihd6n62e.pdf Vishay Siliconix Description: MOSFET N-CH 620V 6A TO-252
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N65ET4-GE3 SIHD6N65ET4-GE3 sihd6n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N65ET5-GE3 SIHD6N65ET5-GE3 sihd6n65e.pdf Vishay Siliconix Description: MOSFET N-CH 650V 7A TO252AA
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD7N60ET4-GE3 SIHD7N60ET4-GE3 sihd7n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 7A TO252AA
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD7N60ET5-GE3 SIHD7N60ET5-GE3 sihd7n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 7A TO252AA
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120P04-04L_GE3 SQM120P04-04L_GE3 sqm120p0.pdf Vishay Siliconix Description: MOSFET P-CH 40V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
auf Bestellung 1366 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SQM120P10_10M1LGE3 SQM120P10_10M1LGE3 sqm120p10-10m1l.pdf Vishay Siliconix Description: MOSFET P-CH 100V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Supplier Device Package: TO-263 (D²Pak)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 117 Stücke - Preis und Lieferfrist anzeigen
SQM120N06-06_GE3 SQM120N06-06_GE3 sqm120n06-06.pdf Vishay Siliconix Description: MOSFET N-CH 60V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6495pF @ 25V
Power Dissipation (Max): 230W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 677 Stücke - Preis und Lieferfrist anzeigen
SQM120N10-09_GE3 SQM120N10-09_GE3 sqm120n10-09.pdf Vishay Siliconix Description: MOSFET N-CH 100V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120N04-1M4L_GE3 Vishay Siliconix Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR430ATRPBF IRFR430ATRPBF sihfr430.pdf Vishay Siliconix Description: MOSFET N-CH 500V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
IRF644STRLPBF IRF644STRLPBF sihf644s.pdf Vishay Siliconix Description: MOSFET N-CH 250V 14A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 779 Stücke
Lieferzeit 21-28 Tag (e)
SIHP16N50C-E3 SIHP16N50C-E3 sihp16n5.pdf Vishay Siliconix Description: MOSFET N-CH 500V 16A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 963 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.85 EUR
10+ 13.34 EUR
100+ 10.92 EUR
500+ 9.3 EUR
SI2319DDS-T1-GE3 SI2319DDS-T1-GE3 si2319dds.pdf Vishay Siliconix Description: MOSFET P-CH 40V 2.7A/3.6A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2319DS-T1-GE3 SI2319DS-T1-GE3 72315.pdf Vishay Siliconix Description: MOSFET P-CH 40V 2.3A SOT23-3
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG70N60AEF-GE3 SIHG70N60AEF-GE3 sihg70n60aef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 60A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 290 Stücke
Lieferzeit 21-28 Tag (e)
SIHD690N60E-GE3 SIHD690N60E-GE3 sihd690n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 6.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIHG47N60AEF-GE3 SIHG47N60AEF-GE3 sihg47n60aef.pdf Vishay Siliconix Description: MOSFET N-CH 600V 40A TO247AC
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG100N60E-GE3 SIHG100N60E-GE3 sihg100n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 30A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 505 Stücke
Lieferzeit 21-28 Tag (e)
SIHLL110TR-GE3 SIHLL110TR-GE3 sihll110.pdf Vishay Siliconix Description: MOSFET N-CH 100V 1.5A SOT223
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 si2301cd.pdf Vishay Siliconix Description: MOSFET P-CH 20V 3.1A SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8937 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SUD50P04-08-GE3 SUD50P04-08-GE3 sud50p04-08.pdf Vishay Siliconix Description: MOSFET P-CH 40V 50A DPAK
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 20V
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 159nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SST201-T1-E3 SST201-T1-E3 J;SST201%20Series.pdf Vishay Siliconix Description: JFET N-CH 25V .7MA SOT-23
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: SST201
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ403BEEP-T1_GE3 SQJ403BEEP-T1_GE3 sqj403beep.pdf Vishay Siliconix Description: MOSFET P-CH 30V 30A PPAK SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ403
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
auf Bestellung 1742 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2693 Stücke - Preis und Lieferfrist anzeigen
SQM50N04-4M1_GE3 SQM50N04-4M1_GE3 sqm50n044m1.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A TO-263
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6715pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SQM50N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 745 Stücke
Lieferzeit 21-28 Tag (e)
SQD50N04-5M6L_GE3 SQD50N04-5M6L_GE3 sqd50n04-5m6l.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A TO252AA
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 71W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 143 Stücke
Lieferzeit 21-28 Tag (e)
SQD50N04-4M5L_GE3 SQD50N04-4M5L_GE3 SQD50N04-4M5L.pdf Vishay Siliconix Description: MOSFET N-CH 40V 50A TO252AA
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Manufacturer: Vishay Siliconix
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1662 Stücke
Lieferzeit 21-28 Tag (e)
SI4401DDY-T1-GE3 si4401dd.pdf
SI4401DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 16.1A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 6.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3007pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4401
auf Bestellung 4403 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 371829 Stücke - Preis und Lieferfrist anzeigen
SIHU4N80E-GE3 sihu4n80e.pdf
SIHU4N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 800V TO-251
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Base Part Number: SIHU4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB4N80E-GE3 sihb4n80e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V D2PAK TO-263
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D²PAK (TO-263)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP4N80E-GE3 sihp4n80e.pdf
SIHP4N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.3A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHP4
Package / Case: TO-220-3
auf Bestellung 983 Stücke
Lieferzeit 21-28 Tag (e)
SIHA4N80E-GE3 siha4n80e.pdf
SIHA4N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 4.3A TO220
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 622pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Base Part Number: SIHA4
Package / Case: TO-220-3 Full Pack
auf Bestellung 965 Stücke
Lieferzeit 21-28 Tag (e)
SIA110DJ-T1-GE3 sia110dj.pdf
SIA110DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA110
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7772 Stücke - Preis und Lieferfrist anzeigen
SIA110DJ-T1-GE3 sia110dj.pdf
SIA110DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 50V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: Out of Bounds
Package / Case: PowerPAK® SC-70-6
Base Part Number: SIA110
auf Bestellung 2184 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5588 Stücke - Preis und Lieferfrist anzeigen
SISH112DN-T1-GE3 sish112dn.pdf
SISH112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Power Dissipation (Max): 1.5W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8SH
Package / Case: PowerPAK® 1212-8SH
Base Part Number: SISH112
auf Bestellung 4046 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7050 Stücke - Preis und Lieferfrist anzeigen
SI4463BDY-T1-GE3 si4463bd.pdf
SI4463BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Base Part Number: SI4463
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 13.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
auf Bestellung 1611 Stücke
Lieferzeit 21-28 Tag (e)
SIRA20DP-T1-RE3 sira20dp.pdf
SIRA20DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 81.7A/100A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 81.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3549 Stücke - Preis und Lieferfrist anzeigen
SIR800ADP-T1-GE3 sir800adp.pdf
SIR800ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR800ADP-T1-RE3 sir800adp.pdf
SIR800ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V POWERPAK SO8 SNG
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Packaging: Tape & Reel (TR)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1450 Stücke - Preis und Lieferfrist anzeigen
SIR800ADP-T1-RE3 sir800adp.pdf
SIR800ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50.2A/177A PPAK
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): +12V, -8V
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: PowerPAK® SO-8
auf Bestellung 1450 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.34 EUR
13+ 2.07 EUR
100+ 1.59 EUR
500+ 1.26 EUR
1000+ 1.01 EUR
SIR800DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A POWERPAKSO-8
Packaging: Tape & Reel (TR)
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 5125pF @ 10V
Power Dissipation (Max): 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7686DP-T1-GE3 73451.pdf
SI7686DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 622 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
7+ 4 EUR
10+ 3.61 EUR
100+ 2.9 EUR
500+ 2.38 EUR
SIHD6N65ET1-GE3 sihd6n65e.pdf
SIHD6N65ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1403BDL-T1-GE3 si1403bdl.pdf
SI1403BDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13325 Stücke - Preis und Lieferfrist anzeigen
SI1403BDL-T1-GE3 si1403bdl.pdf
SI1403BDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.5A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 73 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13252 Stücke - Preis und Lieferfrist anzeigen
SI5441BDC-T1-GE3 73207.pdf
SI5441BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.4A 1206-8
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2995 Stücke
Lieferzeit 21-28 Tag (e)
SI4634DY-T1-E3 si4634dy.pdf
SI4634DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 77700 Stücke - Preis und Lieferfrist anzeigen
6+ 4.5 EUR
10+ 4.03 EUR
100+ 3.24 EUR
500+ 2.66 EUR
1000+ 2.28 EUR
SQJA04EP-T1_GE3 sqja04ep.pdf
SQJA04EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 75A POWERPAKSO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
auf Bestellung 3445 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SQJA04EP-T1_GE3 sqja04ep.pdf
SQJA04EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 75A POWERPAKSO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3445 Stücke - Preis und Lieferfrist anzeigen
2N6660JAN02
2N6660JAN02
Hersteller: Vishay Siliconix
Description: MOSFET JFET N-CH
Manufacturer: Vishay Siliconix
Packaging: Bulk
Part Status: Obsolete
Base Part Number: 2N6660
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL510STRLPBF sihf510s.pdf
IRL510STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A D2PAK
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 751 Stücke - Preis und Lieferfrist anzeigen
SIR120DP-T1-RE3 sir120dp.pdf
SIR120DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 24.7A/106A PPAK
Base Part Number: SIR120
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5900 Stücke - Preis und Lieferfrist anzeigen
SQA401EJ-T1_GE3 sqa401ej.pdf
SQA401EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.75A SC70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Base Part Number: SQA401
Package / Case: PowerPAK® SC-70-6
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQA401EJ-T1_GE3 sqa401ej.pdf
SQA401EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.75A SC70-6
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Base Part Number: SQA401
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 13.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.75A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
DG2523DN-T1-GE4 dg2523.pdf
DG2523DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 16QFN
On-State Resistance (Max): 550mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -19pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 310MHz
auf Bestellung 1869 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.43 EUR
10+ 3.05 EUR
25+ 2.9 EUR
100+ 2.38 EUR
250+ 2.22 EUR
500+ 1.97 EUR
1000+ 1.61 EUR
DG2525DN-T1-GE4 dg2525.pdf
DG2525DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL DPDT 16-MINIQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Switch Time (Ton, Toff) (Max): 60µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -19pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 310MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4946CDY-T1-GE3 si4946cdy.pdf
SI4946CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN DUAL 60V SO-8
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 2W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG2002EDL-T1-GE3 dg2002e.pdf
DG2002EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT SC-70-6
Operating Temperature: -40°C ~ 85°C
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1.5nA
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Base Part Number: DG2002
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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DG2002EDL-T1-GE3 dg2002e.pdf
DG2002EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT SC-70-6
Crosstalk: -77dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1.5nA
Base Part Number: DG2002
Supplier Device Package: SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Channel Capacitance (CS(off), CD(off)): 7pF, 7pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 30ns, 24ns
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 40mOhm (Typ)
On-State Resistance (Max): 8Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 2230 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3102 Stücke - Preis und Lieferfrist anzeigen
SIHF065N60E-GE3 sihf065n60e.pdf
SIHF065N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 347 Stücke
Lieferzeit 21-28 Tag (e)
2+ 16.93 EUR
10+ 15.29 EUR
100+ 12.66 EUR
SIHF7N60E-GE3 sihf7n60e.pdf
SIHF7N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 7A TO220
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 31W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Vgs (Max): ±30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHF7N60E-GE3 sihf7n60e.pdf
SIHF7N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V 7A TO220
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 959 Stücke
Lieferzeit 21-28 Tag (e)
SIHFS11N50A-GE3 91286.pdf
SIHFS11N50A-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 11A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 170W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIRA62DP-T1-RE3 sira62dp.pdf
SIRA62DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 30V
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIRA62DP-T1-RE3 sira62dp.pdf
SIRA62DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 51.4A/80A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4460 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 51.4A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.67 EUR
10+ 3.29 EUR
V30406-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH SMD
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
V30408-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH SMD
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIP32402ADNP-T1GE4 sip32401a.pdf
SIP32402ADNP-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Load Discharge, Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Base Part Number: SIP3240*A
Package / Case: 4-UFDFN Exposed Pad
auf Bestellung 14197 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1 Stücke - Preis und Lieferfrist anzeigen
DG333ADW-T1-E3 dg333a.pdf
DG333ADW-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20SOIC
Base Part Number: DG333
Supplier Device Package: 20-SOIC
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -80dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Charge Injection: 10pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
On-State Resistance (Max): 45Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1004 Stücke
Lieferzeit 21-28 Tag (e)
DG3257DN-T1-GE4 dg3257.pdf
DG3257DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 6UDFN
Base Part Number: DG3257
Supplier Device Package: 6-UDFN (1x1)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -32dB @ 240MHz
Channel Capacitance (CS(off), CD(off)): 3pF, 9pF
Charge Injection: 4pC
-3db Bandwidth: 714MHz
Switch Time (Ton, Toff) (Max): 50ns, 45ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3941 Stücke - Preis und Lieferfrist anzeigen
DG3257DN-T1-GE4 dg3257.pdf
DG3257DN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH 6UDFN
Base Part Number: DG3257
Supplier Device Package: 6-UDFN (1x1)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -32dB @ 240MHz
Channel Capacitance (CS(off), CD(off)): 3pF, 9pF
Charge Injection: 4pC
-3db Bandwidth: 714MHz
Switch Time (Ton, Toff) (Max): 50ns, 45ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 600mOhm
On-State Resistance (Max): 6Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 3941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
DG309BDY-T1-E3 dg308b.pdf
DG309BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16SOIC
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG309DY-T1-E3 dg308a.pdf
DG309DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST/CMOS 16SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel-to-Channel Matching (ΔRon): 1.7Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 4V ~ 44V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
auf Bestellung 7414 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
4+ 7.41 EUR
10+ 6.66 EUR
25+ 6.28 EUR
100+ 5.35 EUR
250+ 5.03 EUR
500+ 4.4 EUR
1000+ 3.91 EUR
DG333ALDW-T1-E3 dg333a.pdf
DG333ALDW-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 20SOIC
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 8pF
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel-to-Channel Matching (ΔRon): 2Ohm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -80dB @ 1MHz
Charge Injection: 10pC
Voltage - Supply, Dual (V±): ±4V ~ 22V
Voltage - Supply, Single (V+): 5V ~ 40V
Supplier Device Package: 20-SOIC
On-State Resistance (Max): 45Ohm
auf Bestellung 691 Stücke
Lieferzeit 21-28 Tag (e)
SIHG47N60AE-GE3 sihg47n60ae.pdf
SIHG47N60AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 43A TO247AC
Power Dissipation (Max): 313W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Packaging: Tube
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG120N60E-GE3 sihg120n60e.pdf
SIHG120N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO247AC
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Base Part Number: SIHG120
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1562pF @ 100V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP120N60E-GE3 sihp120n60e.pdf
SIHP120N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO220AB
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 393 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.1 EUR
10+ 11.75 EUR
100+ 9.63 EUR
SIHD6N80E-GE3 sihd6n80e.pdf
SIHD6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
auf Bestellung 2910 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.41 EUR
10+ 4.86 EUR
100+ 3.9 EUR
500+ 3.21 EUR
1000+ 2.75 EUR
SIHP6N80E-GE3 sihp6n80e.pdf
SIHP6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 800V TO-220AB
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: SIHP6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA6N80E-GE3 siha6n80e.pdf
SIHA6N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A TO220
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
auf Bestellung 985 Stücke
Lieferzeit 21-28 Tag (e)
SI4048DY-T1-GE3 si4048dy.pdf
SI4048DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 19.3A 8SOIC
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 15V
auf Bestellung 2262 Stücke
Lieferzeit 21-28 Tag (e)
DG403DY-T1-E3 dg401.pdf
DG403DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 16SOIC
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: DG403
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 60pC
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Voltage - Supply, Dual (V±): ±5V ~ 17V
Voltage - Supply, Single (V+): 5V ~ 34V
Channel-to-Channel Matching (ΔRon): 3Ohm
On-State Resistance (Max): 45Ohm
auf Bestellung 5301 Stücke
Lieferzeit 21-28 Tag (e)
SQD50P04-13L_GE3 sqd50p04-13l.pdf
SQD50P04-13L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3590pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
auf Bestellung 5386 Stücke
Lieferzeit 21-28 Tag (e)
SIC779ACD-T1-GE3 sic769ac.pdf
SIC779ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC CTLR PFC STAGE PPAK MLP66-40
Base Part Number: SIC779
Supplier Device Package: PowerPAK® MLP66-40
Package / Case: Out of Bounds
Load Type: Inductive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Surface Mount
Fault Protection: Over Temperature, Shoot-Through, UVLO
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3V ~ 16V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 35A
Technology: DrMOS
auf Bestellung 2880 Stücke
Lieferzeit 21-28 Tag (e)
IRFR9014TRLPBF sihfr901.pdf
IRFR9014TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1975 Stücke - Preis und Lieferfrist anzeigen
IRFR024TRPBF 91264.pdf
IRFR024TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
auf Bestellung 2004 Stücke
Lieferzeit 21-28 Tag (e)
IRFR024TRLPBF 91264.pdf
IRFR024TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2685 Stücke
Lieferzeit 21-28 Tag (e)
SI5948DU-T1-GE3 si5948du.pdf
SI5948DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V 6A POWERPAK
Part Status: Active
Supplier Device Package: PowerPAK® ChipFet Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2601 Stücke - Preis und Lieferfrist anzeigen
SI5948DU-T1-GE3 si5948du.pdf
SI5948DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 40V 6A POWERPAK
Part Status: Active
Supplier Device Package: PowerPAK® ChipFet Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 82mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® ChipFET™ Dual
Packaging: Cut Tape (CT)
auf Bestellung 2601 Stücke
Lieferzeit 21-28 Tag (e)
SQM100N10-10_GE3 sqm100n1.pdf
SQM100N10-10_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 100A TO-263
Base Part Number: SQM100N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 673 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 235 Stücke - Preis und Lieferfrist anzeigen
SIHP28N65E-GE3 sihp28n65e.pdf
SIHP28N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 29A TO220AB
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 112mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3405pF @ 100V
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQD40N10-25_GE3 sqd40n10-25.pdf
SQD40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N62ET1-GE3 sihd6n62e.pdf
SIHD6N62ET1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 620V 6A TO252AA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD2N80E-GE3 sihd2n80e.pdf
SIHD2N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 2.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 2.75Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 36 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.59 EUR
10+ 3.2 EUR
SIHD6N62E-GE3 sihd6n62e.pdf
SIHD6N62E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 620V 6A TO-252
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N65ET4-GE3 sihd6n65e.pdf
SIHD6N65ET4-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD6N65ET5-GE3 sihd6n65e.pdf
SIHD6N65ET5-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A TO252AA
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD7N60ET4-GE3 sihd7n60e.pdf
SIHD7N60ET4-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO252AA
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHD7N60ET5-GE3 sihd7n60e.pdf
SIHD7N60ET5-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 7A TO252AA
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
Power Dissipation (Max): 78W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120P04-04L_GE3 sqm120p0.pdf
SQM120P04-04L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13980pF @ 20V
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
auf Bestellung 1366 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SQM120P10_10M1LGE3 sqm120p10-10m1l.pdf
SQM120P10_10M1LGE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Supplier Device Package: TO-263 (D²Pak)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 117 Stücke - Preis und Lieferfrist anzeigen
SQM120N06-06_GE3 sqm120n06-06.pdf
SQM120N06-06_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6495pF @ 25V
Power Dissipation (Max): 230W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SQM120
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 677 Stücke - Preis und Lieferfrist anzeigen
SQM120N10-09_GE3 sqm120n10-09.pdf
SQM120N10-09_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 8645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQM120N04-1M4L_GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFR430ATRPBF sihfr430.pdf
IRFR430ATRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30000 Stücke - Preis und Lieferfrist anzeigen
IRF644STRLPBF sihf644s.pdf
IRF644STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 14A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 280mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 779 Stücke
Lieferzeit 21-28 Tag (e)
SIHP16N50C-E3 sihp16n5.pdf
SIHP16N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 16A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 963 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.85 EUR
10+ 13.34 EUR
100+ 10.92 EUR
500+ 9.3 EUR
SI2319DDS-T1-GE3 si2319dds.pdf
SI2319DDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 2.7A/3.6A SOT23
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2319DS-T1-GE3 72315.pdf
SI2319DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 2.3A SOT23-3
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG70N60AEF-GE3 sihg70n60aef.pdf
SIHG70N60AEF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 60A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 5348 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 410 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 290 Stücke
Lieferzeit 21-28 Tag (e)
SIHD690N60E-GE3 sihd690n60e.pdf
SIHD690N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 6.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SIHG47N60AEF-GE3 sihg47n60aef.pdf
SIHG47N60AEF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A TO247AC
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 3576 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Packaging: Tube
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 313W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHG100N60E-GE3 sihg100n60e.pdf
SIHG100N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO247AC
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 505 Stücke
Lieferzeit 21-28 Tag (e)
SIHLL110TR-GE3 sihll110.pdf
SIHLL110TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
SI2301CDS-T1-GE3 si2301cd.pdf
SI2301CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.1A SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 8937 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SUD50P04-08-GE3 sud50p04-08.pdf
SUD50P04-08-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A DPAK
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 73.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5380pF @ 20V
Base Part Number: SUD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 159nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SST201-T1-E3 J;SST201%20Series.pdf
SST201-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 25V .7MA SOT-23
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: SST201
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJ403BEEP-T1_GE3 sqj403beep.pdf
SQJ403BEEP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJ403
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 164nC @ 10V
auf Bestellung 1742 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2693 Stücke - Preis und Lieferfrist anzeigen
SQM50N04-4M1_GE3 sqm50n044m1.pdf
SQM50N04-4M1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO-263
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6715pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SQM50N
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 745 Stücke
Lieferzeit 21-28 Tag (e)
SQD50N04-5M6L_GE3 sqd50n04-5m6l.pdf
SQD50N04-5M6L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 71W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 143 Stücke
Lieferzeit 21-28 Tag (e)
SQD50N04-4M5L_GE3 SQD50N04-4M5L.pdf
SQD50N04-4M5L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A TO252AA
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5860pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Manufacturer: Vishay Siliconix
Base Part Number: SQD50
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 1662 Stücke
Lieferzeit 21-28 Tag (e)
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