Die Produkte vishay siliconix
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]
| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DG506BEW-T1-GE3 |
|
Vishay Siliconix |
Description: IC MUX ANA DUAL 16/8CH 28SOIC Supplier Device Package: 28-SOIC Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Crosstalk: -85dB @ 1MHz Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 3pF, 13pF Charge Injection: 1pC -3db Bandwidth: 114MHz Switch Time (Ton, Toff) (Max): 250ns, 200ns Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 12V Channel-to-Channel Matching (ΔRon): 10Ohm On-State Resistance (Max): 300Ohm Number of Circuits: 1 Multiplexer/Demultiplexer Circuit: 16:1 Part Status: Active Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
DG2733EDQ-T1-GE3 |
|
Vishay Siliconix |
Description: IC ANLG SWITCH DUAL SPDT 10MSOP Supplier Device Package: 10-MSOP Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -90dB @ 100kHz -3db Bandwidth: 120MHz Switch Time (Ton, Toff) (Max): 78ns, 58ns Voltage - Supply, Single (V+): 1.65V ~ 5.5V Channel-to-Channel Matching (ΔRon): 60mOhm On-State Resistance (Max): 300Ohm Number of Circuits: 2 Base Part Number: DG2733 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPDT Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: IC ANLG SWITCH DUAL SPDT 10MSOP Operating Temperature: -40°C ~ 85°C (TA) Crosstalk: -90dB @ 100kHz -3db Bandwidth: 120MHz Switch Time (Ton, Toff) (Max): 78ns, 58ns Voltage - Supply, Single (V+): 1.65V ~ 5.5V Channel-to-Channel Matching (ΔRon): 60mOhm On-State Resistance (Max): 300Ohm Number of Circuits: 2 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPDT Part Status: Active Packaging: Cut Tape (CT) Base Part Number: DG2733 Supplier Device Package: 10-MSOP Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount |
auf Bestellung 4982 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
 |
SIR182DP-T1-RE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 60V 60A POWERPAKSO-8 Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 69.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 30V Vgs (Max): ±20V |
auf Bestellung 5576 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 60V 60A POWERPAKSO-8 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 69.4W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 30V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
 |
SI4403DDY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 15.4A 8SOIC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 99nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3187 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SQD40061EL_GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CHAN 40V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
SI3483DDV-T1-GE3 |
|
Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET TSOP Packaging: Cut Tape (CT) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): +16V, -20V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power Dissipation (Max): 2W (Ta), 3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Base Part Number: SI3483 |
auf Bestellung 4893 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5173 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: P-CHANNEL 30-V (D-S) MOSFET TSOP Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): +16V, -20V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power Dissipation (Max): 2W (Ta), 3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6 Base Part Number: SI3483 |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5173 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
 |
SIZ348DT-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET DUAL N-CHAN 30V POWERPAIR Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Part Status: Active Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6051 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SUM60N02-3M9P-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 60A TO263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Cut Tape (CT) |
auf Bestellung 37 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
SQJ868EP-T1_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 58A POWERPAKSOL Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V Vgs (Max): ±20V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 48W (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 40V 58A POWERPAKSOL Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 48W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V Vgs (Max): ±20V |
auf Bestellung 2985 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
|
SI4143DY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CHANNEL 30V 25.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET P-CHANNEL 30V 25.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V |
auf Bestellung 1355 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
 |
SI4634DY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 24.5A 8-SOIC Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 2498 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2700 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
DG401DY-T1-E3 |
|
Vishay Siliconix |
Description: IC ANALOG SWITCH SPDT 16SOIC Switch Circuit: SPST - NO Crosstalk: -94.8dB @ 1MHz Charge Injection: 60pC Voltage - Supply, Dual (V±): ±15V Supplier Device Package: 16-SOIC On-State Resistance (Max): 45Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Part Status: Active Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Packaging: Cut Tape (CT) Switch Time (Ton, Toff) (Max): 150ns, 100ns Multiplexer/Demultiplexer Circuit: 1:1 |
auf Bestellung 52 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
SI4948BEY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2P-CH 60V 2.4A 8-SOIC FET Type: 2 P-Channel (Dual) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power - Max: 1.4W Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A Drain to Source Voltage (Vdss): 60V FET Feature: Logic Level Gate |
auf Bestellung 855 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
DG2788ADN-T1-GE4 |
|
Vishay Siliconix |
Description: IC ANLG SW 4CH SPDT 16MINI QFN Supplier Device Package: 16-miniQFN (1.8x2.6) -3db Bandwidth: 338MHz On-State Resistance (Max): 500mOhm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Cut Tape (CT) Number of Circuits: 2 Part Status: Active Current - Leakage (IS(off)) (Max): 100nA Switch Time (Ton, Toff) (Max): 50µs, 1µs Channel-to-Channel Matching (ΔRon): 50mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: DPDT Crosstalk: -61dB @ 1MHz Charge Injection: -245pC Voltage - Supply, Single (V+): 1.8V ~ 5.5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SUD40N10-25-E3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 40A TO252 Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SQJ459EP-T1_GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 60V 52A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drain to Source Voltage (Vdss): 60V Part Status: Active Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Base Part Number: SQJ459 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 83W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4586pF @ 30V Vgs (Max): ±20V |
auf Bestellung 53128 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 52601 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
SIRA12BDP-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CHAN 30V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5W (Ta), 38W (Tc) Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET N-CHAN 30V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 1555 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
|
|
SI4816BDY-T1-E3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs(th) (Max) @ Id: 3V @ 250µA Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A Drain to Source Voltage (Vdss): 30V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI4816 Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1W, 1.25W |
auf Bestellung 2060 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
IRFR210TRLPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 200V 2.6A DPAK Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V |
auf Bestellung 36 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
SI4434ADY-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 250V 2.8A/4.1A 8SO Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.9W (Ta), 6W (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
 |
SISS30DN-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8S Package / Case: PowerPAK® 1212-8S Base Part Number: SISS30 |
auf Bestellung 1855 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
SQM40016EM_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 250A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SQM40041EL_GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 40V 120A TO263 Input Capacitance (Ciss) (Max) @ Vds: 23600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SQM40016EM_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 250A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SQM40081EL_GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 40V 50A TO263 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SUM70090E-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 50A TO263 Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SUM70030E-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 150A TO263 Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SUM70060E-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 131A TO263 Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SQM40N10-30_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 40A TO263 Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V |
auf Bestellung 358 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
SQM40022E_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 150A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SQM40P10-40L_GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 100V 40A TO263 Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SQM40022EM_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 150A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Tape & Reel (TR) Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
SQM40031EL_GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 40V 120A D2PAK Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SQM40010EL_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 120A D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 40V 120A D2PAK Supplier Device Package: TO-263 (D²Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 21 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
 |
SQM40014EM_GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 15525 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SQD40031EL_GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 30V 100A TO252AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 136W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Part Status: Active Packaging: Cut Tape (CT) Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
SISS12DN-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 40V 37.5A/60A PPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5690 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
| SIZ988DT-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2 N-CH 30V 8-POWERPAIR Power - Max: 20.2W, 40W Operating Temperature: -55°C ~ 150°C (TJ) Part Status: Active Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-PowerPair® Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) |
auf Bestellung 5089 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||
 |
SIZ980DT-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2 N-CH 30V 8-POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 20W, 66W FET Type: 2 N-Channel (Dual), Schottky Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
auf Bestellung 1649 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5599 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| SIZ988DT-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2 N-CH 30V 8-POWERPAIR Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Part Status: Active Supplier Device Package: 8-PowerPair® Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 20.2W, 40W Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5089 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||
|
|
SIZ348DT-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET DUAL N-CHAN 30V POWERPAIR Part Status: Active Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 N-Channel (Dual) Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 51 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
IRFR9010TRLPBF |
|
Vishay Siliconix |
Description: MOSFET P-CH 50V 5.3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
auf Bestellung 2964 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
DG201HSDQ-T1-E3 |
|
Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16TSSOP Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA On-State Resistance (Max): 50Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel-to-Channel Matching (ΔRon): 1.5Ohm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -100dB @ 100kHz Charge Injection: -5pC Voltage - Supply, Dual (V±): ±15V Voltage - Supply, Single (V+): 10.8V ~ 16.5V Supplier Device Package: 16-TSSOP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 971 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
DG201HSDY-T1-E3 |
|
Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Voltage - Supply, Single (V+): 10.8V ~ 16.5V Supplier Device Package: 16-SOIC Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 50Ohm Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Number of Circuits: 4 Part Status: Active Current - Leakage (IS(off)) (Max): 1nA Channel Capacitance (CS(off), CD(off)): 5pF Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel-to-Channel Matching (ΔRon): 1.5Ohm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -100dB @ 100kHz Charge Injection: -5pC Voltage - Supply, Dual (V±): ±15V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 156 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
 |
SI1034CX-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET 2N-CH 20V SC89-6 Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 610mA (Ta) Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Cut Tape (CT) Base Part Number: SI1034 Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 220mW |
auf Bestellung 28655 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 24000 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
SIA468DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 37.8A PPAK SC70 Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Base Part Number: SIA468 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V Vgs (Max): +20V, -16V Part Status: Active Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10365 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
| Vishay Siliconix |
Description: MOSFET N-CH 30V 37.8A PPAK SC70 Vgs(th) (Max) @ Id: 2.4V @ 250µA Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Base Part Number: SIA468 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Mounting Type: Surface Mount Part Status: Active Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 19W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V Vgs (Max): +20V, -16V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V |
auf Bestellung 4818 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10365 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
| SIHA6N80AE-GE3 |
|
Vishay Siliconix |
Description: MOSFET E SERIES THIN-LEAD TO-220 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Power Dissipation (Max): 30W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack Base Part Number: SIHA6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
| SIHU6N80AE-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 800V 5A TO220 Base Part Number: SIHA6 Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 30W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 2990 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||
| Vishay Siliconix |
Description: MOSFET E SERIES IPAK TO-251 Base Part Number: SIHA6 Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 30W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
| SIHD6N80AE-GE3 |
|
Vishay Siliconix |
Description: MOSFET E SERIES DPAK TO-252 Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SIHD6 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 62.5W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2001 Stücke - Preis und Lieferfrist anzeigen
|
||||||||||||
| Vishay Siliconix |
Description: MOSFET E SERIES DPAK TO-252 Base Part Number: SIHD6 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Mounting Type: Surface Mount Power Dissipation (Max): 62.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) |
auf Bestellung 2999 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2001 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
| Vishay Siliconix |
Description: MOSFET E SERIES DPAK TO-252 Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: SIHD6 Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 62.5W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Vgs (Max): ±30V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2001 Stücke - Preis und Lieferfrist anzeigen
|
|
|||||||||||||
| SIHU6N80AE-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 800V 5A TO251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 62.5W (Tc) Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V Base Part Number: SIHU6 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drain to Source Voltage (Vdss): 800V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5990 Stücke - Preis und Lieferfrist anzeigen
|
||||||||||||
 |
SI3460DDV-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 7.9A 6-TSOP Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI3460 Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V |
auf Bestellung 668 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 8516 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
SI2312CDS-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 20V 6A SOT-23 Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SI2312 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V |
auf Bestellung 9072 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
SI2334DS-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 4.9A SOT-23 FET Type: N-Channel Part Status: Obsolete Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) |
auf Bestellung 1239 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 1247 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
SI2336DS-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 30V 5.2A SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 22079 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
IRF840ASTRRPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 500V 8A D2PAK FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 125W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) |
auf Bestellung 566 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
IRF840LCLPBF |
 |
Vishay Siliconix |
Description: MOSFET N-CH 500V 8A I2PAK Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
IRF830STRLPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 500V 4.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drain to Source Voltage (Vdss): 500V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 74W (Tc) |
auf Bestellung 7855 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
IRF840APBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 500V 8A TO220AB Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
|
|
IRF840PBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 500V 8A TO220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 8386 Stücke - Preis und Lieferfrist anzeigen
|
|||||||||||
|
|
IRLR024TRPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 60V 14A DPAK Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V Vgs(th) (Max) @ Id: 2V @ 250µA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drain to Source Voltage (Vdss): 60V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 5276 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
 |
SIHH27N60EF-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 600V 29A POWERPAK8 FET Type: N-Channel Part Status: Active Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 202W (Tc) Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 100V Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) |
auf Bestellung 2715 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
SIHH26N60EF-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CHAN 600V 24A POWERPAK Base Part Number: SIHH26 Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Package / Case: 8-PowerTDFN Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Mounting Type: Surface Mount Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 202W (Tc) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 2744pF @ 100V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
SIHH26N60E-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CH 600V 25A POWERPAK8X8 Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: SIHH26 Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 202W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 100V Vgs (Max): ±30V |
auf Bestellung 3119 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 34 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
IRF510PBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 100V 5.6A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 7740 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
 |
SIA461DJ-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET P-CH 20V 12A SC70-6 Base Part Number: SIA461 Package / Case: PowerPAK® SC-70-6 Supplier Device Package: PowerPAK® SC-70-6 Single Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drain to Source Voltage (Vdss): 20V Technology: MOSFET (Metal Oxide) FET Type: P-Channel Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc) Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V |
auf Bestellung 40706 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 67909 Stücke - Preis und Lieferfrist anzeigen
|
|
||||||||||
|
|
SIHH120N60E-T1-GE3 |
|
Vishay Siliconix |
Description: MOSFET N-CHAN 600V PPAK 8X8 Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs(th) (Max) @ Id: 5V @ 250µA Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: 8-PowerTDFN Supplier Device Package: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 156W (Tc) |
auf Bestellung 2329 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
IRF730STRLPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 400V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: IRF730 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
auf Bestellung 615 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
IRF730ASTRLPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A D2PAK Base Part Number: IRF730 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drain to Source Voltage (Vdss): 400V Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 74W (Tc) Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) |
auf Bestellung 732 Stücke Lieferzeit 21-28 Tag (e) |
|
||||||||||
|
|
IRFRC20TRPBF |
|
Vishay Siliconix |
Description: MOSFET N-CH 600V 2A DPAK Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Part Number: IRFRC20 Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drain to Source Voltage (Vdss): 600V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Supplier Device Package: D-Pak Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 2.5W (Ta), 42W (Tc) |
auf Bestellung 6141 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 70 Stücke - Preis und Lieferfrist anzeigen
|
|
| DG506BEW-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC MUX ANA DUAL 16/8CH 28SOIC
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Charge Injection: 1pC
-3db Bandwidth: 114MHz
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 300Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC MUX ANA DUAL 16/8CH 28SOIC
Supplier Device Package: 28-SOIC
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Charge Injection: 1pC
-3db Bandwidth: 114MHz
Switch Time (Ton, Toff) (Max): 250ns, 200ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Channel-to-Channel Matching (ΔRon): 10Ohm
On-State Resistance (Max): 300Ohm
Number of Circuits: 1
Multiplexer/Demultiplexer Circuit: 16:1
Part Status: Active
Packaging: Cut Tape (CT)
| DG2733EDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH DUAL SPDT 10MSOP
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Base Part Number: DG2733
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke Description: IC ANLG SWITCH DUAL SPDT 10MSOP
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Base Part Number: DG2733
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 9982 Stücke - Preis und Lieferfrist anzeigen
| DG2733EDQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH DUAL SPDT 10MSOP
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG2733
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
auf Bestellung 4982 Stücke Description: IC ANLG SWITCH DUAL SPDT 10MSOP
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -90dB @ 100kHz
-3db Bandwidth: 120MHz
Switch Time (Ton, Toff) (Max): 78ns, 58ns
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Channel-to-Channel Matching (ΔRon): 60mOhm
On-State Resistance (Max): 300Ohm
Number of Circuits: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPDT
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: DG2733
Supplier Device Package: 10-MSOP
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
auf Bestellung 7500 Stücke - Preis und Lieferfrist anzeigen
| SIR182DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POWERPAKSO-8
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 30V
Vgs (Max): ±20V
auf Bestellung 5576 Stücke Description: MOSFET N-CH 60V 60A POWERPAKSO-8
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 30V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIR182DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 60A POWERPAKSO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 30V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET N-CH 60V 60A POWERPAKSO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 69.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 30V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5576 Stücke - Preis und Lieferfrist anzeigen
| SI4403DDY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 15.4A 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 20V 15.4A 8SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 99nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3187 Stücke - Preis und Lieferfrist anzeigen
| SQD40061EL_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 40V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHAN 40V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
| SI3483DDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3483
auf Bestellung 4893 Stücke Description: P-CHANNEL 30-V (D-S) MOSFET TSOP
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3483
Lieferzeit 21-28 Tag (e)
auf Bestellung 8173 Stücke - Preis und Lieferfrist anzeigen
| SI3483DDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3483
auf Bestellung 3000 Stücke Description: P-CHANNEL 30-V (D-S) MOSFET TSOP
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 31.2mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power Dissipation (Max): 2W (Ta), 3W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Base Part Number: SI3483
Lieferzeit 21-28 Tag (e)
auf Bestellung 10066 Stücke - Preis und Lieferfrist anzeigen
| SIZ348DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 30V POWERPAIR
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET DUAL N-CHAN 30V POWERPAIR
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6051 Stücke - Preis und Lieferfrist anzeigen
| SUM60N02-3M9P-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
auf Bestellung 37 Stücke Description: MOSFET N-CH 20V 60A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 120W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5950pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
| SQJ868EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A POWERPAKSOL
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 58A POWERPAKSOL
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Vgs (Max): ±20V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 2985 Stücke - Preis und Lieferfrist anzeigen
| SQJ868EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A POWERPAKSOL
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Vgs (Max): ±20V
auf Bestellung 2985 Stücke Description: MOSFET N-CH 40V 58A POWERPAKSOL
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7.35mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 20V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
| SI4143DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHANNEL 30V 25.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
auf Bestellung 1355 Stücke - Preis und Lieferfrist anzeigen
| SI4143DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
auf Bestellung 1355 Stücke Description: MOSFET P-CHANNEL 30V 25.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25.3A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 12A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 15 V
Lieferzeit 21-28 Tag (e)
| SI4634DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24.5A 8-SOIC
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 2498 Stücke Description: MOSFET N-CH 30V 24.5A 8-SOIC
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Lieferzeit 21-28 Tag (e)
auf Bestellung 2700 Stücke - Preis und Lieferfrist anzeigen
| DG401DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC ANALOG SWITCH SPDT 16SOIC
Switch Circuit: SPST - NO
Crosstalk: -94.8dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Part Status: Active
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Packaging: Cut Tape (CT)
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 1:1
auf Bestellung 52 Stücke Description: IC ANALOG SWITCH SPDT 16SOIC
Switch Circuit: SPST - NO
Crosstalk: -94.8dB @ 1MHz
Charge Injection: 60pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 45Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Part Status: Active
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Packaging: Cut Tape (CT)
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Multiplexer/Demultiplexer Circuit: 1:1
Lieferzeit 21-28 Tag (e)
|
| SI4948BEY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 2.4A 8-SOIC
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
auf Bestellung 855 Stücke Description: MOSFET 2P-CH 60V 2.4A 8-SOIC
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
Lieferzeit 21-28 Tag (e)
| DG2788ADN-T1-GE4 |
|
Hersteller: Vishay Siliconix
Description: IC ANLG SW 4CH SPDT 16MINI QFN
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 338MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -245pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANLG SW 4CH SPDT 16MINI QFN
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 338MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: DPDT
Crosstalk: -61dB @ 1MHz
Charge Injection: -245pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
auf Bestellung 2500 Stücke - Preis und Lieferfrist anzeigen
| SUD40N10-25-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 40A TO252
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
| SQJ459EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 52A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Part Status: Active
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SQJ459
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4586pF @ 30V
Vgs (Max): ±20V
auf Bestellung 53128 Stücke Description: MOSFET P-CH 60V 52A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 108nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 18mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drain to Source Voltage (Vdss): 60V
Part Status: Active
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Base Part Number: SQJ459
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4586pF @ 30V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 52601 Stücke - Preis und Lieferfrist anzeigen
| SIRA12BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 30V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CHAN 30V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
auf Bestellung 1555 Stücke - Preis und Lieferfrist anzeigen
| SIRA12BDP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 30V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 1555 Stücke Description: MOSFET N-CHAN 30V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
| SI4816BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4816
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
auf Bestellung 2060 Stücke Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4816
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
Lieferzeit 21-28 Tag (e)
| IRFR210TRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A DPAK
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
auf Bestellung 36 Stücke Description: MOSFET N-CH 200V 2.6A DPAK
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| SI4434ADY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.8A/4.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 250V 2.8A/4.1A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
| SISS30DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS30
auf Bestellung 1855 Stücke Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1666pF @ 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS30
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
| SQM40016EM_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 250A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 250A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
| SQM40041EL_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 23600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 120A TO263
Input Capacitance (Ciss) (Max) @ Vds: 23600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| SQM40016EM_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 250A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 250A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| SQM40081EL_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 50A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 50A TO263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
| SUM70090E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO263
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 50A TO263
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
| SUM70030E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 150A TO263
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 150A TO263
Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
| SUM70060E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 131A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 131A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| SQM40N10-30_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO263
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
auf Bestellung 358 Stücke Description: MOSFET N-CH 100V 40A TO263
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3345 pF @ 25 V
Lieferzeit 21-28 Tag (e)
|
| SQM40022E_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 150A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 150A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
| SQM40P10-40L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 40A TO263
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 100V 40A TO263
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
| SQM40022EM_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 150A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 150A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
auf Bestellung 40 Stücke - Preis und Lieferfrist anzeigen
| SQM40031EL_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 120A D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 120A D2PAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| SQM40010EL_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 120A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
| SQM40010EL_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A D2PAK
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 21 Stücke Description: MOSFET N-CH 40V 120A D2PAK
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 17100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Lieferzeit 21-28 Tag (e)
|
| SQM40014EM_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15525 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 200A TO263-7
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15525 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
| SQD40031EL_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 100A TO252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 30V 100A TO252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 136W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
| SISS12DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 37.5A/60A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 37.5A/60A PPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.98mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 60A (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
auf Bestellung 5690 Stücke - Preis und Lieferfrist anzeigen
| SIZ988DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
auf Bestellung 5089 Stücke Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Power - Max: 20.2W, 40W
Operating Temperature: -55°C ~ 150°C (TJ)
Part Status: Active
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| SIZ980DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 20W, 66W
FET Type: 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
auf Bestellung 1649 Stücke Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 20W, 66W
FET Type: 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 5599 Stücke - Preis und Lieferfrist anzeigen
| SIZ988DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET 2 N-CH 30V 8-POWERPAIR
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: 8-PowerPair®
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V, 23.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V, 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 20.2W, 40W
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5089 Stücke - Preis und Lieferfrist anzeigen
|
| SIZ348DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 30V POWERPAIR
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 51 Stücke Description: MOSFET DUAL N-CHAN 30V POWERPAIR
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
|
| IRFR9010TRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 5.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
auf Bestellung 2964 Stücke Description: MOSFET P-CH 50V 5.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Lieferzeit 21-28 Tag (e)
| DG201HSDQ-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16TSSOP
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
On-State Resistance (Max): 50Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-TSSOP
auf Bestellung 971 Stücke - Preis und Lieferfrist anzeigen
| DG201HSDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-SOIC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16SOIC
Voltage - Supply, Single (V+): 10.8V ~ 16.5V
Supplier Device Package: 16-SOIC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 50Ohm
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel-to-Channel Matching (ΔRon): 1.5Ohm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 100kHz
Charge Injection: -5pC
Voltage - Supply, Dual (V±): ±15V
auf Bestellung 156 Stücke - Preis und Lieferfrist anzeigen
| SI1034CX-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1034
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
auf Bestellung 28655 Stücke Description: MOSFET 2N-CH 20V SC89-6
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 396mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 610mA (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SI1034
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 220mW
Lieferzeit 21-28 Tag (e)
auf Bestellung 24000 Stücke - Preis und Lieferfrist anzeigen
| SIA468DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIA468
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke Description: MOSFET N-CH 30V 37.8A PPAK SC70
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIA468
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Part Status: Active
Packaging: Tape & Reel (TR)
Lieferzeit 21-28 Tag (e)
auf Bestellung 15183 Stücke - Preis und Lieferfrist anzeigen
| SIA468DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 37.8A PPAK SC70
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIA468
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
auf Bestellung 4818 Stücke Description: MOSFET N-CH 30V 37.8A PPAK SC70
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Base Part Number: SIA468
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Part Status: Active
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Lieferzeit 21-28 Tag (e)
auf Bestellung 13365 Stücke - Preis und Lieferfrist anzeigen
| SIHA6N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES THIN-LEAD TO-220
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET E SERIES THIN-LEAD TO-220
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220 Full Pack
Package / Case: TO-220-3 Full Pack
Base Part Number: SIHA6
| SIHU6N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO220
Base Part Number: SIHA6
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 2990 Stücke Description: MOSFET N-CH 800V 5A TO220
Base Part Number: SIHA6
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
| SIHU6N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES IPAK TO-251
Base Part Number: SIHA6
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 3000 Stücke Description: MOSFET E SERIES IPAK TO-251
Base Part Number: SIHA6
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 2990 Stücke - Preis und Lieferfrist anzeigen
| SIHD6N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES DPAK TO-252
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHD6
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET E SERIES DPAK TO-252
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SIHD6
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
| SIHD6N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES DPAK TO-252
Base Part Number: SIHD6
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2999 Stücke Description: MOSFET E SERIES DPAK TO-252
Base Part Number: SIHD6
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Mounting Type: Surface Mount
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 5001 Stücke - Preis und Lieferfrist anzeigen
| SIHD6N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET E SERIES DPAK TO-252
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SIHD6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 3000 Stücke Description: MOSFET E SERIES DPAK TO-252
Mounting Type: Surface Mount
Supplier Device Package: D-PAK (TO-252AA)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: SIHD6
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Lieferzeit 21-28 Tag (e)
auf Bestellung 5000 Stücke - Preis und Lieferfrist anzeigen
| SIHU6N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Base Part Number: SIHU6
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 800V 5A TO251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 422pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Base Part Number: SIHU6
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 5990 Stücke - Preis und Lieferfrist anzeigen
| SI3460DDV-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.9A 6-TSOP
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3460
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
auf Bestellung 668 Stücke Description: MOSFET N-CH 20V 7.9A 6-TSOP
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI3460
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 8516 Stücke - Preis und Lieferfrist anzeigen
| SI2312CDS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6A SOT-23
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2312
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
auf Bestellung 9072 Stücke Description: MOSFET N-CH 20V 6A SOT-23
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2312
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 10V
Lieferzeit 21-28 Tag (e)
| SI2334DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.9A SOT-23
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
auf Bestellung 1239 Stücke Description: MOSFET N-CH 30V 4.9A SOT-23
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 44mOhm @ 4.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1247 Stücke - Preis und Lieferfrist anzeigen
| SI2336DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.2A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 22079 Stücke Description: MOSFET N-CH 30V 5.2A SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 42mOhm @ 3.8A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
auf Bestellung 18 Stücke - Preis und Lieferfrist anzeigen
| IRF840ASTRRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
auf Bestellung 566 Stücke Description: MOSFET N-CH 500V 8A D2PAK
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
| IRF840LCLPBF | |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A I2PAK
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 8A I2PAK
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 20000 Stücke - Preis und Lieferfrist anzeigen
| IRF830STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
auf Bestellung 7855 Stücke Description: MOSFET N-CH 500V 4.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
Lieferzeit 21-28 Tag (e)
| IRF840APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 8A TO220AB
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
| IRF840PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 8A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 500V 8A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
auf Bestellung 8386 Stücke - Preis und Lieferfrist anzeigen
| IRLR024TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5276 Stücke Description: MOSFET N-CH 60V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| SIHH27N60EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A POWERPAK8
FET Type: N-Channel
Part Status: Active
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 100V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
auf Bestellung 2715 Stücke Description: MOSFET N-CH 600V 29A POWERPAK8
FET Type: N-Channel
Part Status: Active
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2609pF @ 100V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 13.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
Lieferzeit 21-28 Tag (e)
| SIHH26N60EF-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 600V 24A POWERPAK
Base Part Number: SIHH26
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Package / Case: 8-PowerTDFN
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 2744pF @ 100V
auf Bestellung 3000 Stücke Description: MOSFET N-CHAN 600V 24A POWERPAK
Base Part Number: SIHH26
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Package / Case: 8-PowerTDFN
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 141mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 2744pF @ 100V
Lieferzeit 21-28 Tag (e)
| SIHH26N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A POWERPAK8X8
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH26
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 100V
Vgs (Max): ±30V
auf Bestellung 3119 Stücke Description: MOSFET N-CH 600V 25A POWERPAK8X8
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 135mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIHH26
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 202W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2815pF @ 100V
Vgs (Max): ±30V
Lieferzeit 21-28 Tag (e)
auf Bestellung 34 Stücke - Preis und Lieferfrist anzeigen
| IRF510PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 7740 Stücke Description: MOSFET N-CH 100V 5.6A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
|
| SIA461DJ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Base Part Number: SIA461
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
auf Bestellung 40706 Stücke Description: MOSFET P-CH 20V 12A SC70-6
Base Part Number: SIA461
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.4W (Ta), 17.9W (Tc)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Lieferzeit 21-28 Tag (e)
auf Bestellung 67909 Stücke - Preis und Lieferfrist anzeigen
| SIHH120N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 600V PPAK 8X8
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
auf Bestellung 2329 Stücke Description: MOSFET N-CHAN 600V PPAK 8X8
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
Lieferzeit 21-28 Tag (e)
| IRF730STRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRF730
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
auf Bestellung 615 Stücke Description: MOSFET N-CH 400V 5.5A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: IRF730
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Lieferzeit 21-28 Tag (e)
| IRF730ASTRLPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Base Part Number: IRF730
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 732 Stücke Description: MOSFET N-CH 400V 5.5A D2PAK
Base Part Number: IRF730
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 74W (Tc)
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Lieferzeit 21-28 Tag (e)
| IRFRC20TRPBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRFRC20
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
auf Bestellung 6141 Stücke Description: MOSFET N-CH 600V 2A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: IRFRC20
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Lieferzeit 21-28 Tag (e)
auf Bestellung 70 Stücke - Preis und Lieferfrist anzeigen
Wählen Sie Seite:
[ << Vorherige Seite ]
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
[ Nächste Seite >> ]