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SISH108DN-T1-GE3 SISH108DN-T1-GE3 sish108dn.pdf Vishay Siliconix Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Base Part Number: SISH108
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISH108
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±16V
auf Bestellung 3780 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CHAN 20 V POWERPAK 1212
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SISH10
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
auf Bestellung 5974 Stücke
Lieferzeit 21-28 Tag (e)
SI8409DB-T1-E1 SI8409DB-T1-E1 si8409db.pdf Vishay Siliconix Description: MOSFET P-CH 30V 4.6A 2X2 4-MFP
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
auf Bestellung 6286 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5670 Stücke - Preis und Lieferfrist anzeigen
IRFR9014TRLPBF IRFR9014TRLPBF sihfr901.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.1A DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 1975 Stücke
Lieferzeit 21-28 Tag (e)
SIHFR9014-GE3 SIHFR9014-GE3 sihfr901.pdf Vishay Siliconix Description: MOSFET P-CH 60V 5.1A DPAK
Base Part Number: SiHFR9014
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SI7465DP-T1-E3 SI7465DP-T1-E3 73113.pdf Vishay Siliconix Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7465
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
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Lieferzeit 21-28 Tag (e)
auf Bestellung 42050 Stücke - Preis und Lieferfrist anzeigen
SI7489DP-T1-E3 SI7489DP-T1-E3 si7489dp.pdf Vishay Siliconix Description: MOSFET P-CH 100V 28A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SI7489
Package / Case: PowerPAK® SO-8
auf Bestellung 9584 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3268 Stücke - Preis und Lieferfrist anzeigen
SI7942DP-T1-E3 SI7942DP-T1-E3 72118.pdf Vishay Siliconix Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7942
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 3092 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9995 Stücke - Preis und Lieferfrist anzeigen
SIRA01DP-T1-GE3 SIRA01DP-T1-GE3 sira01dp.pdf Vishay Siliconix Description: MOSFET P-CH 30V POWERPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 4172 Stücke
Lieferzeit 21-28 Tag (e)
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 si4816bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
auf Bestellung 2249 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 76 Stücke - Preis und Lieferfrist anzeigen
IRFR020TRPBF IRFR020TRPBF sihfr020.pdf Vishay Siliconix Description: MOSFET N-CH 60V 14A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
auf Bestellung 2113 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 348 Stücke - Preis und Lieferfrist anzeigen
DG1412EEN-T1-GE4 DG1412EEN-T1-GE4 dg1411e.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16QFN
Channel-to-Channel Matching (ΔRon): 40mOhm
On-State Resistance (Max): 1.5Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Supplier Device Package: 16-QFN (4x4)
Switch Circuit: SPST - NO
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Crosstalk: -104dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Charge Injection: -41pC
-3db Bandwidth: 150MHz
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
auf Bestellung 8238 Stücke
Lieferzeit 21-28 Tag (e)
SUM90N10-8M2P-E3 SUM90N10-8M2P-E3 sum90n10-8m2p.pdf Vishay Siliconix Description: MOSFET N-CH 100V 90A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SUM90
Supplier Device Package: TO-263 (D2Pak)
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
auf Bestellung 2206 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4369 Stücke - Preis und Lieferfrist anzeigen
SIC462ED-T1-GE3 SIC462ED-T1-GE3 sic46x.pdf Vishay Siliconix Description: IC REG BUCK ADJ 6A MLP55-27
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 6A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Synchronous Rectifier: Yes
auf Bestellung 1542 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SQJ431EP-T1_GE3 SQJ431EP-T1_GE3 sqj431ep.pdf Vishay Siliconix Description: MOSFET P-CHAN 200V SO8L
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 15451 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 170 Stücke - Preis und Lieferfrist anzeigen
SQ1421EDH-T1_GE3 SQ1421EDH-T1_GE3 sq1421edh.pdf Vishay Siliconix Description: MOSFET P-CH 60V 1.6A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Tc)
auf Bestellung 7988 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6377 Stücke - Preis und Lieferfrist anzeigen
SQ2362ES-T1_GE3 SQ2362ES-T1_GE3 sq2362es.pdf Vishay Siliconix Description: MOSFET N-CH 60V 4.4A TO236
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
auf Bestellung 47031 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 14 Stücke - Preis und Lieferfrist anzeigen
SQ2308CES-T1_GE3 SQ2308CES-T1_GE3 sq2308ces.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2.3A
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
auf Bestellung 20812 Stücke
Lieferzeit 21-28 Tag (e)
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SIP32458DB-T2-GE1 SIP32458DB-T2-GE1 sip32458.pdf Vishay Siliconix Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Base Part Number: SIP32458
Package / Case: 6-UFBGA, CSPBGA
Supplier Device Package: 6-WLCSP (1.46x0.96)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1234 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1234 Stücke - Preis und Lieferfrist anzeigen
DG202BDQ-T1-E3 DG202BDQ-T1-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16TSSOP
Base Part Number: DG202
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1912 Stücke
Lieferzeit 21-28 Tag (e)
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DG202BDY-T1-E3 DG202BDY-T1-E3 dg201b.pdf Vishay Siliconix Description: IC SWITCH QUAD CMOS 16SOIC
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Base Part Number: DG202
Supplier Device Package: 16-SOIC
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
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SI5459DU-T1-GE3 SI5459DU-T1-GE3 si5459du.pdf Vishay Siliconix Description: MOSFET P-CH 20V 8A CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® ChipFET™ Single
Supplier Device Package: PowerPAK® ChipFet Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Vgs (Max): ±12V
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI1302DL-T1-GE3 SI1302DL-T1-GE3 71249.pdf Vishay Siliconix Description: MOSFET N-CH 30V 600MA SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
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SIP32413DNP-T1-GE4 SIP32413DNP-T1-GE4 sip32413.pdf Vishay Siliconix Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Base Part Number: SIP32413
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 2
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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IRLL014TRPBF IRLL014TRPBF sihll014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 2.7A SOT223
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
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SI7137DP-T1-GE3 SI7137DP-T1-GE3 si7137dp.pdf Vishay Siliconix Description: MOSFET P-CH 20V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 585nC @ 10V
Base Part Number: SI7137
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
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DG411LEDQ-T1-GE3 DG411LEDQ-T1-GE3 dg411le.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-TSSOP
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 26Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -114dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 6.6pC
Switch Time (Ton, Toff) (Max): 50ns, 30ns
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DG411DY-T1-E3 DG411DY-T1-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG411
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
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DG411HSDN-T1-E4 DG411HSDN-T1-E4 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-QFN 4X4
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Base Part Number: DG411
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
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DG411DQ-T1-E3 DG411DQ-T1-E3 dg411.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-TSSOP
Switch Circuit: SPST - NC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG411HSDY-T1-E3 DG411HSDY-T1-E3 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Base Part Number: DG411
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SIHFR220-GE3 SIHFR220-GE3 sihfr220.pdf Vishay Siliconix Description: MOSFET N-CH 200V 4.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR802DP-T1-GE3 SIR802DP-T1-GE3 sir802dp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 30A PPAK SO-8
Base Part Number: SIR802
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI4497DY-T1-GE3 SI4497DY-T1-GE3 si4497dy.pdf Vishay Siliconix Description: MOSFET P-CH 30V 36A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9685pF @ 15V
Vgs (Max): ±20V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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IRFR1N60APBF IRFR1N60APBF sihfr1n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 1.4A DPAK
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
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SIHFR1N60A-GE3 SIHFR1N60A-GE3 sihfr1n6.pdf Vishay Siliconix Description: MOSFET N-CH 600V 1.4A TO252AA
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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11+ 2.52 EUR
12+ 2.26 EUR
100+ 1.76 EUR
SISS64DN-T1-GE3 SISS64DN-T1-GE3 siss64dn.pdf Vishay Siliconix Description: MOSFET N-CHANNEL 30V 40A 1212-8S
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Power Dissipation (Max): 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS64
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SI4336DY-T1-E3 SI4336DY-T1-E3 Si4336DY.pdf Vishay Siliconix Description: MOSFET N-CH 30V 17A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIR424DP-T1-GE3 SIR424DP-T1-GE3 sir424dp.pdf Vishay Siliconix Description: MOSFET N-CH 20V 30A PPAK SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
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SI7415DN-T1-GE3 SI7415DN-T1-GE3 71691.pdf Vishay Siliconix Description: MOSFET P-CH 60V 3.6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
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DGQ2788AEN-T1-GE4 DGQ2788AEN-T1-GE4 dgq2788a.pdf Vishay Siliconix Description: IC SWITCH QD SPDT MINIQFN-16
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Crosstalk: -61dB @ 1MHz
Charge Injection: -245pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 338MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 2
Part Status: Active
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Switch Circuit: DPDT
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQP120N10-3M8_GE3 SQP120N10-3M8_GE3 sqp120n10-3m8.pdf Vishay Siliconix Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7139DP-T1-GE3 SI7139DP-T1-GE3 si7139dp.pdf Vishay Siliconix Description: MOSFET P-CH 30V 40A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7139
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 15V
Vgs (Max): ±20V
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SI7469DP-T1-GE3 SI7469DP-T1-GE3 si7469dp.pdf Vishay Siliconix Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Part Status: Active
FET Type: P-Channel
Supplier Device Package: PowerPAK® SO-8
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Lieferzeit 21-28 Tag (e)
SI9945BDY-T1-GE3 SI9945BDY-T1-GE3 si9945bdy.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Base Part Number: SI9945
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 37296 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28 Stücke - Preis und Lieferfrist anzeigen
SIRA02DP-T1-GE3 SIRA02DP-T1-GE3 sira02dp.pdf Vishay Siliconix Description: MOSFET N-CH 30V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2990 Stücke
Lieferzeit 21-28 Tag (e)
SI2319DS-T1-E3 SI2319DS-T1-E3 72315.pdf Vishay Siliconix Description: MOSFET P-CH 40V 2.3A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 81732 Stücke
Lieferzeit 21-28 Tag (e)
SIP32401ADNP-T1GE4 SIP32401ADNP-T1GE4 sip32401a.pdf Vishay Siliconix Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32401
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
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Lieferzeit 21-28 Tag (e)
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Vishay Siliconix Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIP3240*A
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
auf Bestellung 7485 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 81000 Stücke - Preis und Lieferfrist anzeigen
SIHH180N60E-T1-GE3 SIHH180N60E-T1-GE3 sihh180n60e.pdf Vishay Siliconix Description: MOSFET N-CH PPAK 8X8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SIHH180
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
IRFPF40 IRFPF40 91250.pdf Vishay Siliconix Description: MOSFET N-CH 900V 4.7A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3457BDV-T1-E3 SI3457BDV-T1-E3 72019.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.7A 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHD12N50E-GE3 SIHD12N50E-GE3 sihd12n50e.pdf Vishay Siliconix Description: MOSFET N-CH 550V 10.5A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF12N50C-E3 SIHF12N50C-E3 sihp12n5.pdf Vishay Siliconix Description: MOSFET N-CH 500V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 999 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.36 EUR
10+ 12 EUR
100+ 9.83 EUR
500+ 8.37 EUR
SIHB12N50E-GE3 SIHB12N50E-GE3 sihb12n50e.pdf Vishay Siliconix Description: MOSFET N-CH 500V 10.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP12N50E-GE3 SIHP12N50E-GE3 sihp12n50e.pdf Vishay Siliconix Description: MOSFET N-CH 500V 10.5A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA12N50E-E3 SIHA12N50E-E3 siha12n50e.pdf Vishay Siliconix Description: MOSFET N-CH 500V 10.5A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620STRLPBF IRL620STRLPBF 91302.pdf Vishay Siliconix Description: MOSFET N-CH 200V 5.2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 797 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 575 Stücke - Preis und Lieferfrist anzeigen
SQ3987EV-T1_GE3 SQ3987EV-T1_GE3 sq3987ev.pdf Vishay Siliconix Description: MOSFET 2 P-CHANNEL 30V 3A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
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DG2731DQ-T1-E3 DG2731DQ-T1-E3 73484.pdf Vishay Siliconix Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Channel-to-Channel Matching (ΔRon): 30mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Number of Circuits: 2
Packaging: Cut Tape (CT)
Crosstalk: -75dB @ 100kHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 450mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7456DP-T1-GE3 SI7456DP-T1-GE3 71603.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SQM40022E_GE3 SQM40022E_GE3 sqm40022e.pdf Vishay Siliconix Description: MOSFET N-CHAN 40V
Vgs (Max): ±20V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
SQM40022EM_GE3 SQM40022EM_GE3 sqm40022em.pdf Vishay Siliconix Description: MOSFET N-CHAN 40V
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
SQD25N06-22L_GE3 SQD25N06-22L_GE3 sqd25n06-22l.pdf Vishay Siliconix Description: MOSFET N-CH 60V 25A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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Lieferzeit 21-28 Tag (e)
SQD25N06-22L_T4GE3 SQD25N06-22L_T4GE3 sqd25n06-22l.pdf Vishay Siliconix Description: MOSFET N-CH 60V 25A TO252AA
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 60V
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SI9433BDY-T1-E3 SI9433BDY-T1-E3 72755.pdf Vishay Siliconix Description: MOSFET P-CH 20V 4.5A 8SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Vishay Siliconix Description: MOSFET P-CH 20V 4.5A 8-SOIC
Base Part Number: SI9433
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 17192 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 62858 Stücke - Preis und Lieferfrist anzeigen
SISS60DN-T1-GE3 SISS60DN-T1-GE3 siss60dn.pdf Vishay Siliconix Description: MOSFET N-CH 30V W/SCHOTTKY PP 12
Base Part Number: SISS60
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 15V
Vgs (Max): +16V, -12V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 30V W/SCHOTTKY PP 12
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS60
auf Bestellung 25 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 30V W/SCHOTTKY PP 12
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 15V
Vgs (Max): +16V, -12V
auf Bestellung 25 Stücke
Lieferzeit 21-28 Tag (e)
SIA517DJ-T1-GE3 SIA517DJ-T1-GE3 sia517dj.pdf Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10619 Stücke
Lieferzeit 21-28 Tag (e)
SIA445EDJ-T1-GE3 SIA445EDJ-T1-GE3 sia445edj.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A SC-70
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
auf Bestellung 19907 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
SIA445EDJT-T1-GE3 SIA445EDJT-T1-GE3 sia445edjt.pdf Vishay Siliconix Description: MOSFET P-CH 20V 12A PPAK SC70-6
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET P-CH 20V 12A SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
Power Dissipation (Max): 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI4816DY-T1-E3 SI4816DY-T1-E3 71121.pdf техническая информация Vishay Siliconix Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90208 Stücke - Preis und Lieferfrist anzeigen
SI7998DP-T1-GE3 SI7998DP-T1-GE3 si7998dp.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 25A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7998
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22W, 40W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
auf Bestellung 5176 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1521 Stücke - Preis und Lieferfrist anzeigen
SI1012CR-T1-GE3 SI1012CR-T1-GE3 si1012cr.pdf Vishay Siliconix Description: MOSFET N-CH 20V 0.63A SC-75A
Base Part Number: SI1012
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 240mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 21465 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 620 Stücke - Preis und Lieferfrist anzeigen
SI2356DS-T1-GE3 SI2356DS-T1-GE3 si2356ds.pdf Vishay Siliconix Description: MOSFET N-CH 40V 4.3A SOT-23
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 51705 Stücke
Lieferzeit 21-28 Tag (e)
SI2369DS-T1-GE3 SI2369DS-T1-GE3 si2369d.pdf Vishay Siliconix Description: MOSFET P-CH 30V 7.6A TO-236
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 90995 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 26276 Stücke - Preis und Lieferfrist anzeigen
SQ2337ES-T1_GE3 SQ2337ES-T1_GE3 sq2337es.pdf Vishay Siliconix Description: MOSFET P-CHAN 80V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
auf Bestellung 18388 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 37597 Stücke - Preis und Lieferfrist anzeigen
SIC639CD-T1-GE3 SIC639CD-T1-GE3 sic639.pdf Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
auf Bestellung 2964 Stücke
Lieferzeit 21-28 Tag (e)
4+ 6.84 EUR
10+ 6.15 EUR
25+ 5.8 EUR
100+ 4.94 EUR
250+ 4.64 EUR
500+ 4.06 EUR
1000+ 3.61 EUR
Vishay Siliconix Description: INTEGRATED POWER STAGE POWERPAK
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
auf Bestellung 2930 Stücke
Lieferzeit 21-28 Tag (e)
SI2307CDS-T1-E3 SI2307CDS-T1-E3 si2307cds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.5A SOT23-3
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
auf Bestellung 5685 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2080 Stücke - Preis und Lieferfrist anzeigen
SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 72699.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.5A SOT23-3
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 7407 Stücke
Lieferzeit 21-28 Tag (e)
SI2307CDS-T1-GE3 SI2307CDS-T1-GE3 si2307cds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 3.5A SOT23-3
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2307
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
auf Bestellung 50106 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 620 Stücke - Preis und Lieferfrist anzeigen
SIZ704DT-T1-GE3 SIZ704DT-T1-GE3 siz704dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 12A PPAK 1212-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power - Max: 20W, 30W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ704
auf Bestellung 178 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 268 Stücke - Preis und Lieferfrist anzeigen
SI9986DY-T1-E3 SI9986DY-T1-E3 si9986.pdf Vishay Siliconix Description: IC MTR DRV BIPOLAR 3.8-13.2V 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3.8V ~ 13.2V
Voltage - Supply: 3.8V ~ 13.2V
Current - Output: 1A
Applications: General Purpose
Technology: Power MOSFET
Interface: Parallel
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 10500 Stücke - Preis und Lieferfrist anzeigen
SI4559ADY-T1-GE3 SI4559ADY-T1-GE3 si4559ad.pdf Vishay Siliconix Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Part Status: Active
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4559
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 52315 Stücke
Lieferzeit 21-28 Tag (e)
IRFR9210TRPBF IRFR9210TRPBF 91281.pdf Vishay Siliconix Description: MOSFET P-CH 200V 1.9A DPAK
Base Part Number: IRFR9210
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 1242 Stücke
Lieferzeit 21-28 Tag (e)
SI2303CDS-T1-E3 SI2303CDS-T1-E3 si2303cd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3126 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 96000 Stücke - Preis und Lieferfrist anzeigen
SI2303CDS-T1-GE3 SI2303CDS-T1-GE3 si2303cd.pdf Vishay Siliconix Description: MOSFET P-CH 30V 2.7A SOT23-3
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 3025 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3080 Stücke - Preis und Lieferfrist anzeigen
SI2303BDS-T1-E3 SI2303BDS-T1-E3 72065.pdf Vishay Siliconix Description: MOSFET P-CH 30V 1.49A SOT23-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2208168 Stücke - Preis und Lieferfrist anzeigen
SISH108DN-T1-GE3 sish108dn.pdf
SISH108DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Base Part Number: SISH108
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9754 Stücke - Preis und Lieferfrist anzeigen
SISH108DN-T1-GE3 sish108dn.pdf
SISH108DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 14A PPAK1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SISH108
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±16V
auf Bestellung 3780 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8974 Stücke - Preis und Lieferfrist anzeigen
SISH108DN-T1-GE3 sish108dn.pdf
SISH108DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 20 V POWERPAK 1212
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SISH10
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
auf Bestellung 5974 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6780 Stücke - Preis und Lieferfrist anzeigen
SI8409DB-T1-E1 si8409db.pdf
SI8409DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.6A 2X2 4-MFP
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.47W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
auf Bestellung 6286 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5670 Stücke - Preis und Lieferfrist anzeigen
IRFR9014TRLPBF sihfr901.pdf
IRFR9014TRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 1975 Stücke
Lieferzeit 21-28 Tag (e)
SIHFR9014-GE3 sihfr901.pdf
SIHFR9014-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 5.1A DPAK
Base Part Number: SiHFR9014
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7465DP-T1-E3 73113.pdf
SI7465DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7465
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 12801 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 42050 Stücke - Preis und Lieferfrist anzeigen
SI7489DP-T1-E3 si7489dp.pdf
SI7489DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Base Part Number: SI7489
Package / Case: PowerPAK® SO-8
auf Bestellung 9584 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3268 Stücke - Preis und Lieferfrist anzeigen
SI7942DP-T1-E3 72118.pdf
SI7942DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 100V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7942
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.4W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 3092 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 9995 Stücke - Preis und Lieferfrist anzeigen
SIRA01DP-T1-GE3 sira01dp.pdf
SIRA01DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V POWERPAK SO-8
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs (Max): +16V, -20V
Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 30V
auf Bestellung 4172 Stücke
Lieferzeit 21-28 Tag (e)
SI4816BDY-T1-GE3 si4816bd.pdf
SI4816BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 8-SO
auf Bestellung 2249 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 76 Stücke - Preis und Lieferfrist anzeigen
IRFR020TRPBF sihfr020.pdf
IRFR020TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 14A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
auf Bestellung 2113 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 348 Stücke - Preis und Lieferfrist anzeigen
DG1412EEN-T1-GE4 dg1411e.pdf
DG1412EEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16QFN
Channel-to-Channel Matching (ΔRon): 40mOhm
On-State Resistance (Max): 1.5Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Supplier Device Package: 16-QFN (4x4)
Switch Circuit: SPST - NO
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Crosstalk: -104dB @ 1MHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 24pF, 23pF
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Charge Injection: -41pC
-3db Bandwidth: 150MHz
Switch Time (Ton, Toff) (Max): 140ns, 110ns
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Voltage - Supply, Single (V+): 4.5V ~ 24V
auf Bestellung 8238 Stücke
Lieferzeit 21-28 Tag (e)
SUM90N10-8M2P-E3 sum90n10-8m2p.pdf
SUM90N10-8M2P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 90A D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Max): 3.75W (Ta), 300W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Base Part Number: SUM90
Supplier Device Package: TO-263 (D2Pak)
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
auf Bestellung 2206 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4369 Stücke - Preis und Lieferfrist anzeigen
SIC462ED-T1-GE3 sic46x.pdf
SIC462ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 6A MLP55-27
Frequency - Switching: 100kHz ~ 2MHz
Current - Output: 6A
Voltage - Output (Max): 55.2V
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Max): 60V
Voltage - Input (Min): 4.5V
Number of Outputs: 1
Output Type: Adjustable
Topology: Buck
Output Configuration: Positive
Function: Step-Down
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® MLP55-27
Package / Case: PowerPAK® MLP55-27
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Synchronous Rectifier: Yes
auf Bestellung 1542 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10 Stücke - Preis und Lieferfrist anzeigen
SQJ431EP-T1_GE3 sqj431ep.pdf
SQJ431EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 200V SO8L
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4355pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 15451 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 170 Stücke - Preis und Lieferfrist anzeigen
SQ1421EDH-T1_GE3 sq1421edh.pdf
SQ1421EDH-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Tc)
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Lieferzeit 21-28 Tag (e)
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SQ2362ES-T1_GE3 sq2362es.pdf
SQ2362ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.4A TO236
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SQ2362
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 60V
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auf Bestellung 14 Stücke - Preis und Lieferfrist anzeigen
SQ2308CES-T1_GE3 sq2308ces.pdf
SQ2308CES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23 (TO-236AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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SIP32458DB-T2-GE1 sip32458.pdf
SIP32458DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Base Part Number: SIP32458
Package / Case: 6-UFBGA, CSPBGA
Supplier Device Package: 6-WLCSP (1.46x0.96)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.5V ~ 5.5V
Interface: On/Off
Output Type: P-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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Lieferzeit 21-28 Tag (e)
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DG202BDQ-T1-E3 dg201b.pdf
DG202BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16TSSOP
Base Part Number: DG202
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Crosstalk: -95dB @ 100kHz
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1912 Stücke
Lieferzeit 21-28 Tag (e)
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DG202BDY-T1-E3 dg201b.pdf
DG202BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD CMOS 16SOIC
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Charge Injection: 1pC
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Voltage - Supply, Single (V+): 4.5V ~ 25V
Base Part Number: DG202
Supplier Device Package: 16-SOIC
Channel-to-Channel Matching (ΔRon): 2Ohm
On-State Resistance (Max): 85Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -95dB @ 100kHz
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SI5459DU-T1-GE3 si5459du.pdf
SI5459DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A CHIPFET
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® ChipFET™ Single
Supplier Device Package: PowerPAK® ChipFet Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Vgs (Max): ±12V
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 5382 Stücke
Lieferzeit 21-28 Tag (e)
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SI1302DL-T1-GE3 71249.pdf
SI1302DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 600MA SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 280mW (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 480mOhm @ 600mA, 10V
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Lieferzeit 21-28 Tag (e)
SIP32413DNP-T1-GE4 sip32413.pdf
SIP32413DNP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 8TDFN
Base Part Number: SIP32413
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 2
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3359 Stücke
Lieferzeit 21-28 Tag (e)
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IRLL014TRPBF sihll014.pdf
IRLL014TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 2.7A SOT223
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
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Lieferzeit 21-28 Tag (e)
SI7137DP-T1-GE3 si7137dp.pdf
SI7137DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 585nC @ 10V
Base Part Number: SI7137
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 7868 Stücke
Lieferzeit 21-28 Tag (e)
DG411LEDQ-T1-GE3 dg411le.pdf
DG411LEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-TSSOP
Voltage - Supply, Dual (V±): ±3V ~ 8V
Voltage - Supply, Single (V+): 3V ~ 16V
On-State Resistance (Max): 26Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -114dB @ 1MHz
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Charge Injection: 6.6pC
Switch Time (Ton, Toff) (Max): 50ns, 30ns
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Lieferzeit 21-28 Tag (e)
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DG411DY-T1-E3 dg411.pdf
DG411DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Base Part Number: DG411
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
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DG411HSDN-T1-E4 dg411hs.pdf
DG411HSDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4X4
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Base Part Number: DG411
Supplier Device Package: 16-QFN (4x4)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
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DG411DQ-T1-E3 dg411.pdf
DG411DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-TSSOP
Switch Circuit: SPST - NC
Part Status: Discontinued at Digi-Key
Supplier Device Package: 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Crosstalk: -85dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Charge Injection: 5pC
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 44V
On-State Resistance (Max): 35Ohm
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
DG411HSDY-T1-E3 dg411hs.pdf
DG411HSDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Supplier Device Package: 16-SOIC
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Crosstalk: -88dB @ 1MHz
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Charge Injection: 22pC
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
On-State Resistance (Max): 35Ohm
Base Part Number: DG411
Number of Circuits: 4
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 1148 Stücke
Lieferzeit 21-28 Tag (e)
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SIHFR220-GE3 sihfr220.pdf
SIHFR220-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 4.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIR802DP-T1-GE3 sir802dp.pdf
SIR802DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Base Part Number: SIR802
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 27.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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SI4497DY-T1-GE3 si4497dy.pdf
SI4497DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 36A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 9685pF @ 15V
Vgs (Max): ±20V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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IRFR1N60APBF sihfr1n6.pdf
IRFR1N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIHFR1N60A-GE3 sihfr1n6.pdf
SIHFR1N60A-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A TO252AA
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
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11+ 2.52 EUR
12+ 2.26 EUR
100+ 1.76 EUR
SISS64DN-T1-GE3 siss64dn.pdf
SISS64DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 30V 40A 1212-8S
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V
Power Dissipation (Max): 57W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS64
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SI4336DY-T1-E3 Si4336DY.pdf
SI4336DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 1.6W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 51809 Stücke - Preis und Lieferfrist anzeigen
SIR424DP-T1-GE3 sir424dp.pdf
SIR424DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 30A PPAK SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package / Case: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
auf Bestellung 12163 Stücke
Lieferzeit 21-28 Tag (e)
SI7415DN-T1-GE3 71691.pdf
SI7415DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A 1212-8
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Vgs (Max): ±20V
auf Bestellung 31852 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 51069 Stücke - Preis und Lieferfrist anzeigen
DGQ2788AEN-T1-GE4 dgq2788a.pdf
DGQ2788AEN-T1-GE4
Hersteller: Vishay Siliconix
Description: IC SWITCH QD SPDT MINIQFN-16
Channel-to-Channel Matching (ΔRon): 50mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Crosstalk: -61dB @ 1MHz
Charge Injection: -245pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 16-miniQFN (1.8x2.6)
-3db Bandwidth: 338MHz
On-State Resistance (Max): 500mOhm
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 2
Part Status: Active
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Switch Circuit: DPDT
Switch Time (Ton, Toff) (Max): 50µs, 1µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
SQP120N10-3M8_GE3 sqp120n10-3m8.pdf
SQP120N10-3M8_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7139DP-T1-GE3 si7139dp.pdf
SI7139DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 40A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7139
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 15V
Vgs (Max): ±20V
auf Bestellung 5935 Stücke
Lieferzeit 21-28 Tag (e)
SI7469DP-T1-GE3 si7469dp.pdf
SI7469DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Package / Case: PowerPAK® SO-8
Part Status: Active
FET Type: P-Channel
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 3487 Stücke
Lieferzeit 21-28 Tag (e)
SI9945BDY-T1-GE3 si9945bdy.pdf
SI9945BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
Base Part Number: SI9945
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 37296 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 28 Stücke - Preis und Lieferfrist anzeigen
SIRA02DP-T1-GE3 sira02dp.pdf
SIRA02DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 15V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 2990 Stücke
Lieferzeit 21-28 Tag (e)
SI2319DS-T1-E3 72315.pdf
SI2319DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 2.3A SOT23-3
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 82mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 20V
Power Dissipation (Max): 750mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 81732 Stücke
Lieferzeit 21-28 Tag (e)
SIP32401ADNP-T1GE4 sip32401a.pdf
SIP32401ADNP-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIP32401
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
auf Bestellung 81512 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 88485 Stücke - Preis und Lieferfrist anzeigen
SIP32401ADNP-T1GE4 sip32401a.pdf
SIP32401ADNP-T1GE4
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4TDFN
Operating Temperature: -40°C ~ 125°C (TJ)
Fault Protection: Reverse Current
Features: Slew Rate Controlled
Input Type: Non-Inverting
Rds On (Typ): 62mOhm
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.1V ~ 5.5V
Interface: On/Off
Output Type: N-Channel
Output Configuration: High Side
Ratio - Input:Output: 1:1
Number of Outputs: 1
Switch Type: General Purpose
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SIP3240*A
Package / Case: 4-UFDFN Exposed Pad
Supplier Device Package: 4-TDFN (1.2x1.6)
Mounting Type: Surface Mount
auf Bestellung 7485 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 162512 Stücke - Preis und Lieferfrist anzeigen
SIHH180N60E-T1-GE3 sihh180n60e.pdf
SIHH180N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH PPAK 8X8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 114W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Base Part Number: SIHH180
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
IRFPF40 91250.pdf
IRFPF40
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 900V 4.7A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3457BDV-T1-E3 72019.pdf
SI3457BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.7A 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.14W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 54mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 40860 Stücke - Preis und Lieferfrist anzeigen
SIHD12N50E-GE3 sihd12n50e.pdf
SIHD12N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 550V 10.5A DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHF12N50C-E3 sihp12n5.pdf
SIHF12N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 999 Stücke
Lieferzeit 21-28 Tag (e)
2+ 13.36 EUR
10+ 12 EUR
100+ 9.83 EUR
500+ 8.37 EUR
SIHB12N50E-GE3 sihb12n50e.pdf
SIHB12N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 10.5A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP12N50E-GE3 sihp12n50e.pdf
SIHP12N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 10.5A TO220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Package / Case: TO-220-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHA12N50E-E3 siha12n50e.pdf
SIHA12N50E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 10.5A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRL620STRLPBF 91302.pdf
IRL620STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 797 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 575 Stücke - Preis und Lieferfrist anzeigen
SQ3987EV-T1_GE3 sq3987ev.pdf
SQ3987EV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 P-CHANNEL 30V 3A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 1.67W
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V
auf Bestellung 5050 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7383 Stücke - Preis und Lieferfrist anzeigen
DG2731DQ-T1-E3 73484.pdf
DG2731DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 400 MOHM 10MSOP
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 104pF
Switch Time (Ton, Toff) (Max): 110ns, 30ns
Channel-to-Channel Matching (ΔRon): 30mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Number of Circuits: 2
Packaging: Cut Tape (CT)
Crosstalk: -75dB @ 100kHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-MSOP
On-State Resistance (Max): 450mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7456DP-T1-GE3 71603.pdf
SI7456DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power Dissipation (Max): 1.9W (Ta)
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 11199 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 18568 Stücke - Preis und Lieferfrist anzeigen
SQM40022E_GE3 sqm40022e.pdf
SQM40022E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V
Vgs (Max): ±20V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 50 Stücke
Lieferzeit 21-28 Tag (e)
SQM40022EM_GE3 sqm40022em.pdf
SQM40022EM_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHAN 40V
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 40 Stücke
Lieferzeit 21-28 Tag (e)
SQD25N06-22L_GE3 sqd25n06-22l.pdf
SQD25N06-22L_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A TO252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Power Dissipation (Max): 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
auf Bestellung 2287 Stücke
Lieferzeit 21-28 Tag (e)
SQD25N06-22L_T4GE3 sqd25n06-22l.pdf
SQD25N06-22L_T4GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 25A TO252AA
Technology: MOSFET (Metal Oxide)
Part Status: Active
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drain to Source Voltage (Vdss): 60V
auf Bestellung 2282 Stücke
Lieferzeit 21-28 Tag (e)
SI9433BDY-T1-E3 72755.pdf
SI9433BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 1468 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 80050 Stücke - Preis und Lieferfrist anzeigen
SI9433BDY-T1-E3 72755.pdf
SI9433BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8-SOIC
Base Part Number: SI9433
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
auf Bestellung 17192 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 64326 Stücke - Preis und Lieferfrist anzeigen
SISS60DN-T1-GE3 siss60dn.pdf
SISS60DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V W/SCHOTTKY PP 12
Base Part Number: SISS60
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 15V
Vgs (Max): +16V, -12V
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
SISS60DN-T1-GE3 siss60dn.pdf
SISS60DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V W/SCHOTTKY PP 12
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 15V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8S
Package / Case: PowerPAK® 1212-8S
Base Part Number: SISS60
auf Bestellung 25 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
SISS60DN-T1-GE3 siss60dn.pdf
SISS60DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V W/SCHOTTKY PP 12
Gate Charge (Qg) (Max) @ Vgs: 85.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
FET Type: N-Channel
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 3960pF @ 15V
Vgs (Max): +16V, -12V
auf Bestellung 25 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 25 Stücke - Preis und Lieferfrist anzeigen
SIA517DJ-T1-GE3 sia517dj.pdf
SIA517DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 10619 Stücke
Lieferzeit 21-28 Tag (e)
SIA445EDJ-T1-GE3 sia445edj.pdf
SIA445EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC-70
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
auf Bestellung 19907 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
SIA445EDJT-T1-GE3 sia445edjt.pdf
SIA445EDJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Package / Case: PowerPAK® SC-70-6
Supplier Device Package: PowerPAK® SC-70-6 Single
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 19W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6000 Stücke - Preis und Lieferfrist anzeigen
SIA445EDJT-T1-GE3 sia445edjt.pdf
SIA445EDJT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 16.7mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 10V
Power Dissipation (Max): 19W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI4816DY-T1-E3 техническая информация 71121.pdf
SI4816DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W, 1.25W
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 90208 Stücke - Preis und Lieferfrist anzeigen
SI7998DP-T1-GE3 si7998dp.pdf
SI7998DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 25A PPAK SO-8
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI7998
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 22W, 40W
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 15A, 10V
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A, 30A
auf Bestellung 5176 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1521 Stücke - Preis und Lieferfrist anzeigen
SI1012CR-T1-GE3 si1012cr.pdf
SI1012CR-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 0.63A SC-75A
Base Part Number: SI1012
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 240mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 396mOhm @ 600mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 21465 Stücke
Lieferzeit 21-28 Tag (e)
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SI2356DS-T1-GE3 si2356ds.pdf
SI2356DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 4.3A SOT-23
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 51705 Stücke
Lieferzeit 21-28 Tag (e)
SI2369DS-T1-GE3 si2369d.pdf
SI2369DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.6A TO-236
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 90995 Stücke
Lieferzeit 21-28 Tag (e)
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SQ2337ES-T1_GE3 sq2337es.pdf
SQ2337ES-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHAN 80V SOT23
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 290mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3W (Tc)
auf Bestellung 18388 Stücke
Lieferzeit 21-28 Tag (e)
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SIC639CD-T1-GE3 sic639.pdf
SIC639CD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5894 Stücke - Preis und Lieferfrist anzeigen
SIC639CD-T1-GE3 sic639.pdf
SIC639CD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Part Status: Active
Load Type: Inductive, Capacitive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 4.5V ~ 5.5V
Technology: Power MOSFET
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 125°C (TA)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
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Lieferzeit 21-28 Tag (e)
auf Bestellung 2930 Stücke - Preis und Lieferfrist anzeigen
4+ 6.84 EUR
10+ 6.15 EUR
25+ 5.8 EUR
100+ 4.94 EUR
250+ 4.64 EUR
500+ 4.06 EUR
1000+ 3.61 EUR
SIC639CD-T1-GE3 sic639.pdf
SIC639CD-T1-GE3
Hersteller: Vishay Siliconix
Description: INTEGRATED POWER STAGE POWERPAK
Supplier Device Package: PowerPAK® MLP55-31L
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Fault Protection: Shoot-Through, UVLO
Technology: Power MOSFET
Load Type: Inductive, Capacitive
Interface: PWM
Applications: Synchronous Buck Converters
Output Configuration: Half Bridge (2)
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Load: 4.5V ~ 5.5V
Voltage - Supply: 4.5V ~ 5.5V
Current - Output / Channel: 50A
auf Bestellung 2930 Stücke
Lieferzeit 21-28 Tag (e)
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SI2307CDS-T1-E3 si2307cds.pdf
SI2307CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.5A SOT23-3
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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Lieferzeit 21-28 Tag (e)
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SI2307BDS-T1-GE3 72699.pdf
SI2307BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 750mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
auf Bestellung 7407 Stücke
Lieferzeit 21-28 Tag (e)
SI2307CDS-T1-GE3 si2307cds.pdf
SI2307CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.5A SOT23-3
Power Dissipation (Max): 1.1W (Ta), 1.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI2307
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
auf Bestellung 50106 Stücke
Lieferzeit 21-28 Tag (e)
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SIZ704DT-T1-GE3 siz704dt.pdf
SIZ704DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A PPAK 1212-8
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power - Max: 20W, 30W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Supplier Device Package: 6-PowerPair™
Base Part Number: SIZ704
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Lieferzeit 21-28 Tag (e)
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SI9986DY-T1-E3 si9986.pdf
SI9986DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MTR DRV BIPOLAR 3.8-13.2V 8SO
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Load: 3.8V ~ 13.2V
Voltage - Supply: 3.8V ~ 13.2V
Current - Output: 1A
Applications: General Purpose
Technology: Power MOSFET
Interface: Parallel
Output Configuration: Half Bridge (2)
Function: Driver - Fully Integrated, Control and Power Stage
Motor Type - AC, DC: Brushed DC, Voice Coil Motor
Motor Type - Stepper: Bipolar
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4559ADY-T1-GE3 si4559ad.pdf
SI4559ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Type: N and P-Channel
Part Status: Active
Power - Max: 3.1W, 3.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 52315 Stücke - Preis und Lieferfrist anzeigen
SI4559ADY-T1-GE3 si4559ad.pdf
SI4559ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W, 3.4W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: SI4559
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
auf Bestellung 52315 Stücke
Lieferzeit 21-28 Tag (e)
IRFR9210TRPBF 91281.pdf
IRFR9210TRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A DPAK
Base Part Number: IRFR9210
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
auf Bestellung 1242 Stücke
Lieferzeit 21-28 Tag (e)
SI2303CDS-T1-E3 si2303cd.pdf
SI2303CDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
auf Bestellung 3126 Stücke
Lieferzeit 21-28 Tag (e)
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SI2303CDS-T1-GE3 si2303cd.pdf
SI2303CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.7A SOT23-3
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
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Lieferzeit 21-28 Tag (e)
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SI2303BDS-T1-E3 72065.pdf
SI2303BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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