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Si4562DY-T1-E3 Si4562DY-T1-E3 Vishay Siliconix 70717.pdf Description: MOSFET N/P-CH 20V 8-SOIC
Produkt ist nicht verfügbar
SI4804CDY-T1-GE3 SI4804CDY-T1-GE3 Vishay Siliconix si4804cdy.pdf Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 767 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.72 EUR
18+ 1.5 EUR
100+ 1.04 EUR
500+ 0.87 EUR
Mindestbestellmenge: 16
SI4816DY-T1-E3 SI4816DY-T1-E3 Vishay Siliconix description Description: MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4920DY-T1-E3 SI4920DY-T1-E3 Vishay Siliconix 70667.pdf Description: MOSFET 2N-CH 30V 8-SOIC
Produkt ist nicht verfügbar
SI4936ADY-T1-E3 SI4936ADY-T1-E3 Vishay Siliconix si4936ad.pdf Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 15333 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.58 EUR
10+ 3.8 EUR
100+ 3.03 EUR
500+ 2.56 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 6
SI4942DY-T1-E3 SI4942DY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4966DY-T1-E3 SI4966DY-T1-E3 Vishay Siliconix si4966dy.pdf Description: MOSFET 2N-CH 20V 8SOIC
Produkt ist nicht verfügbar
SI2316BDS-T1-E3 SI2316BDS-T1-E3 Vishay Siliconix si2316bd.pdf Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
auf Bestellung 2928 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.35 EUR
100+ 1.04 EUR
500+ 0.82 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 34115 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SI3460DV-T1-E3 SI3460DV-T1-E3 Vishay Siliconix si3460dv.pdf Description: MOSFET N-CH 20V 5.1A 6TSOP
Produkt ist nicht verfügbar
SI4186DY-T1-GE3 SI4186DY-T1-GE3 Vishay Siliconix si4186dy.pdf Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 5692 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.81 EUR
12+ 2.29 EUR
100+ 1.78 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 10
SI4401DY-T1-E3 SI4401DY-T1-E3 Vishay Siliconix 71226.pdf Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Produkt ist nicht verfügbar
SI4404DY-T1-E3 SI4404DY-T1-E3 Vishay Siliconix si4404dy.pdf Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 Si4412ADY-T1-E3 Vishay Siliconix 71105.pdf Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
Si4836DY-T1-E3 Si4836DY-T1-E3 Vishay Siliconix 71692.pdf Description: MOSFET N-CH 12V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4842BDY-T1-E3 SI4842BDY-T1-E3 Vishay Siliconix si4842bd.pdf Description: MOSFET N-CH 30V 28A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V
auf Bestellung 2491 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.72 EUR
10+ 4.75 EUR
100+ 3.78 EUR
500+ 3.2 EUR
1000+ 2.72 EUR
Mindestbestellmenge: 5
Si4860DY-T1-E3 Si4860DY-T1-E3 Vishay Siliconix 71752.pdf Description: MOSFET N-CH 30V 11A 8-SOIC
Produkt ist nicht verfügbar
SI4866DY-T1-E3 SI4866DY-T1-E3 Vishay Siliconix si4866dy.pdf Description: MOSFET N-CH 12V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
auf Bestellung 4046 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.1 EUR
10+ 4.22 EUR
100+ 3.36 EUR
500+ 2.84 EUR
1000+ 2.41 EUR
Mindestbestellmenge: 6
SI4884BDY-T1-E3 SI4884BDY-T1-E3 Vishay Siliconix 73454.pdf Description: MOSFET N-CH 30V 16.5A 8-SOIC
auf Bestellung 647 Stücke:
Lieferzeit 21-28 Tag (e)
SI4888DY-T1-E3 SI4888DY-T1-E3 Vishay Siliconix 71336.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Produkt ist nicht verfügbar
SI1307DL-T1-E3 SI1307DL-T1-E3 Vishay Siliconix si1307dl.pdf Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
SI1405DL-T1-E3 SI1405DL-T1-E3 Vishay Siliconix si1405dl.pdf Description: MOSFET P-CH 8V 1.6A SC-70-6
Produkt ist nicht verfügbar
SI2305ADS-T1-E3 SI2305ADS-T1-E3 Vishay Siliconix Si2305ADS.pdf Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Produkt ist nicht verfügbar
SI2305CDS-T1-GE3 SI2305CDS-T1-GE3 Vishay Siliconix si2305cd.pdf Description: MOSFET P-CH 8V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
auf Bestellung 40557 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2335DS-T1-E3 SI2335DS-T1-E3 Vishay Siliconix 71314.pdf Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Produkt ist nicht verfügbar
SI2337DS-T1-GE3 SI2337DS-T1-GE3 Vishay Siliconix si2337ds.pdf Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
auf Bestellung 903 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.29 EUR
14+ 1.88 EUR
100+ 1.46 EUR
500+ 1.24 EUR
Mindestbestellmenge: 12
SI2367DS-T1-GE3 SI2367DS-T1-GE3 Vishay Siliconix si2367ds.pdf Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 16045 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
33+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
SI3445ADV-T1-E3 SI3445ADV-T1-E3 Vishay Siliconix 72859.pdf Description: MOSFET P-CH 8V 4.4A 6-TSOP
Produkt ist nicht verfügbar
SI3445DV-T1-E3 SI3445DV-T1-E3 Vishay Siliconix si3445dv.pdf Description: MOSFET P-CH 8V 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Produkt ist nicht verfügbar
SI3499DV-T1-GE3 SI3499DV-T1-GE3 Vishay Siliconix si3499dv.pdf Description: MOSFET P-CH 8V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
auf Bestellung 6899 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.34 EUR
14+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
SI4477DY-T1-GE3 SI4477DY-T1-GE3 Vishay Siliconix si4477dy.pdf Description: MOSFET P-CH 20V 26.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 18A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
auf Bestellung 3271 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.33 EUR
10+ 2.71 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 8
SI5459DU-T1-GE3 SI5459DU-T1-GE3 Vishay Siliconix si5459du.pdf Description: MOSFET P-CH 20V 8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
19+ 1.4 EUR
100+ 1.07 EUR
500+ 0.85 EUR
Mindestbestellmenge: 17
SISA12DN-T1-GE3 SISA12DN-T1-GE3 Vishay Siliconix sisa10dn.pdf Description: MOSFET N-CH 30V 25A 1212-8
Produkt ist nicht verfügbar
SISA12DN-T1-GE3 SISA12DN-T1-GE3 Vishay Siliconix sisa10dn.pdf Description: MOSFET N-CH 30V 25A 1212-8
Produkt ist nicht verfügbar
SISA12DN-T1-GE3 SISA12DN-T1-GE3 Vishay Siliconix sisa10dn.pdf Description: MOSFET N-CH 30V 25A 1212-8
Produkt ist nicht verfügbar
SISA14DN-T1-GE3 SISA14DN-T1-GE3 Vishay Siliconix sisa14dn.pdf Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 29777 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.53 EUR
20+ 1.34 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix si2365eds.pdf Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 SI8424CDB-T1-E1 Vishay Siliconix si8424cdb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 19
SI1011X-T1-GE3 SI1011X-T1-GE3 Vishay Siliconix si1011x.pdf Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Vishay Siliconix si8466edb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 4012 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 0.99 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 Vishay Siliconix sia449dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 130337 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix si1062x.pdf Description: MOSFET N-CH 20V SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114835 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
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SIA483DJ-T1-GE3 SIA483DJ-T1-GE3 Vishay Siliconix sia483dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 85785 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix sib417aedk.pdf Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 SIRA18DP-T1-GE3 Vishay Siliconix sira18dp.pdf Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
19+ 1.39 EUR
100+ 1.06 EUR
500+ 0.84 EUR
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SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix si1480dh.pdf Description: MOSFET N-CH 100V 2.6A SC70-6
auf Bestellung 251 Stücke:
Lieferzeit 21-28 Tag (e)
SI1011X-T1-GE3 SI1011X-T1-GE3 Vishay Siliconix si1011x.pdf Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix sib417aedk.pdf Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SISA14DN-T1-GE3 SISA14DN-T1-GE3 Vishay Siliconix sisa14dn.pdf Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 Vishay Siliconix si2365eds.pdf Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 SI8424CDB-T1-E1 Vishay Siliconix si8424cdb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
Produkt ist nicht verfügbar
SI1011X-T1-GE3 SI1011X-T1-GE3 Vishay Siliconix si1011x.pdf Description: MOSFET P-CH 12V SC-89
Produkt ist nicht verfügbar
SI8466EDB-T2-E1 SI8466EDB-T2-E1 Vishay Siliconix si8466edb.pdf Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
Mindestbestellmenge: 3000
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 Vishay Siliconix sia449dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 129000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
30000+ 0.31 EUR
75000+ 0.3 EUR
Mindestbestellmenge: 3000
SI1062X-T1-GE3 SI1062X-T1-GE3 Vishay Siliconix si1062x.pdf Description: MOSFET N-CH 20V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
SIA483DJ-T1-GE3 SIA483DJ-T1-GE3 Vishay Siliconix sia483dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 81000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.39 EUR
6000+ 0.37 EUR
9000+ 0.35 EUR
30000+ 0.34 EUR
Mindestbestellmenge: 3000
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix sib417aedk.pdf Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 SIRA18DP-T1-GE3 Vishay Siliconix sira18dp.pdf Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
SI1480DH-T1-GE3 SI1480DH-T1-GE3 Vishay Siliconix si1480dh.pdf Description: MOSFET N-CH 100V 2.6A SC70-6
Produkt ist nicht verfügbar
SIP32451DB-T2-GE1 SIP32451DB-T2-GE1 Vishay Siliconix sip32452.pdf Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
Si4562DY-T1-E3 70717.pdf
Si4562DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Produkt ist nicht verfügbar
SI4804CDY-T1-GE3 si4804cdy.pdf
SI4804CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 767 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.72 EUR
18+ 1.5 EUR
100+ 1.04 EUR
500+ 0.87 EUR
Mindestbestellmenge: 16
SI4816DY-T1-E3 description
SI4816DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.3A/7.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4920DY-T1-E3 70667.pdf
SI4920DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8-SOIC
Produkt ist nicht verfügbar
SI4936ADY-T1-E3 si4936ad.pdf
SI4936ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 15333 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.58 EUR
10+ 3.8 EUR
100+ 3.03 EUR
500+ 2.56 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 6
SI4942DY-T1-E3
SI4942DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4966DY-T1-E3 si4966dy.pdf
SI4966DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8SOIC
Produkt ist nicht verfügbar
SI2316BDS-T1-E3 si2316bd.pdf
SI2316BDS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
auf Bestellung 2928 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.35 EUR
100+ 1.04 EUR
500+ 0.82 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SI3458BDV-T1-GE3
SI3458BDV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 4.1A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 34115 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
SI3460DV-T1-E3 si3460dv.pdf
SI3460DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.1A 6TSOP
Produkt ist nicht verfügbar
SI4186DY-T1-GE3 si4186dy.pdf
SI4186DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3630 pF @ 10 V
auf Bestellung 5692 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.81 EUR
12+ 2.29 EUR
100+ 1.78 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 10
SI4401DY-T1-E3 71226.pdf
SI4401DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5 V
Produkt ist nicht verfügbar
SI4404DY-T1-E3 si4404dy.pdf
SI4404DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8-SOIC
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 71105.pdf
Si4412ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
Si4836DY-T1-E3 71692.pdf
Si4836DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4842BDY-T1-E3 si4842bd.pdf
SI4842BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 28A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 15 V
auf Bestellung 2491 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.72 EUR
10+ 4.75 EUR
100+ 3.78 EUR
500+ 3.2 EUR
1000+ 2.72 EUR
Mindestbestellmenge: 5
Si4860DY-T1-E3 71752.pdf
Si4860DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8-SOIC
Produkt ist nicht verfügbar
SI4866DY-T1-E3 si4866dy.pdf
SI4866DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
auf Bestellung 4046 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.1 EUR
10+ 4.22 EUR
100+ 3.36 EUR
500+ 2.84 EUR
1000+ 2.41 EUR
Mindestbestellmenge: 6
SI4884BDY-T1-E3 73454.pdf
SI4884BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16.5A 8-SOIC
auf Bestellung 647 Stücke:
Lieferzeit 21-28 Tag (e)
SI4888DY-T1-E3 71336.pdf
SI4888DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Produkt ist nicht verfügbar
SI1307DL-T1-E3 si1307dl.pdf
SI1307DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.85A SOT323-3
Produkt ist nicht verfügbar
SI1405DL-T1-E3 si1405dl.pdf
SI1405DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Produkt ist nicht verfügbar
SI2305ADS-T1-E3 Si2305ADS.pdf
SI2305ADS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Produkt ist nicht verfügbar
SI2305CDS-T1-GE3 si2305cd.pdf
SI2305CDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V
auf Bestellung 40557 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.82 EUR
100+ 0.49 EUR
500+ 0.45 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 25
SI2335DS-T1-E3 71314.pdf
SI2335DS-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Produkt ist nicht verfügbar
SI2337DS-T1-GE3 si2337ds.pdf
SI2337DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
auf Bestellung 903 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.29 EUR
14+ 1.88 EUR
100+ 1.46 EUR
500+ 1.24 EUR
Mindestbestellmenge: 12
SI2367DS-T1-GE3 si2367ds.pdf
SI2367DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 16045 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
33+ 0.81 EUR
100+ 0.56 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
SI3445ADV-T1-E3 72859.pdf
SI3445ADV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 4.4A 6-TSOP
Produkt ist nicht verfügbar
SI3445DV-T1-E3 si3445dv.pdf
SI3445DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Produkt ist nicht verfügbar
SI3499DV-T1-GE3 si3499dv.pdf
SI3499DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.3A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
auf Bestellung 6899 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.34 EUR
14+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
Mindestbestellmenge: 12
SI4477DY-T1-GE3 si4477dy.pdf
SI4477DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 26.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 18A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
auf Bestellung 3271 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.33 EUR
10+ 2.71 EUR
100+ 2.11 EUR
500+ 1.79 EUR
1000+ 1.46 EUR
Mindestbestellmenge: 8
SI5459DU-T1-GE3 si5459du.pdf
SI5459DU-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® ChipFET™ Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® ChipFET™ Single
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 10 V
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
19+ 1.4 EUR
100+ 1.07 EUR
500+ 0.85 EUR
Mindestbestellmenge: 17
SISA12DN-T1-GE3 sisa10dn.pdf
SISA12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A 1212-8
Produkt ist nicht verfügbar
SISA12DN-T1-GE3 sisa10dn.pdf
SISA12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A 1212-8
Produkt ist nicht verfügbar
SISA12DN-T1-GE3 sisa10dn.pdf
SISA12DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 25A 1212-8
Produkt ist nicht verfügbar
SISA14DN-T1-GE3 sisa14dn.pdf
SISA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 29777 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.53 EUR
20+ 1.34 EUR
100+ 0.93 EUR
500+ 0.78 EUR
1000+ 0.66 EUR
Mindestbestellmenge: 17
SI2365EDS-T1-GE3 si2365eds.pdf
SI2365EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 si8424cdb.pdf
SI8424CDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.53 EUR
Mindestbestellmenge: 19
SI1011X-T1-GE3 si1011x.pdf
SI1011X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SI8466EDB-T2-E1 si8466edb.pdf
SI8466EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 4012 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
27+ 0.99 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SIA449DJ-T1-GE3 sia449dj.pdf
SIA449DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 130337 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.91 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
Mindestbestellmenge: 25
SI1062X-T1-GE3 si1062x.pdf
SI1062X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114835 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.3 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 25
SIA483DJ-T1-GE3 sia483dj.pdf
SIA483DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 85785 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.17 EUR
27+ 1 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 sira18dp.pdf
SIRA18DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 901 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
19+ 1.39 EUR
100+ 1.06 EUR
500+ 0.84 EUR
Mindestbestellmenge: 17
SI1480DH-T1-GE3 si1480dh.pdf
SI1480DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.6A SC70-6
auf Bestellung 251 Stücke:
Lieferzeit 21-28 Tag (e)
SI1011X-T1-GE3 si1011x.pdf
SI1011X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC-89
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 8403 Stücke:
Lieferzeit 21-28 Tag (e)
SISA14DN-T1-GE3 sisa14dn.pdf
SISA14DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.59 EUR
6000+ 0.56 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 3000
SI2365EDS-T1-GE3 si2365eds.pdf
SI2365EDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.9A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Produkt ist nicht verfügbar
SI8424CDB-T1-E1 si8424cdb.pdf
SI8424CDB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
Produkt ist nicht verfügbar
SI1011X-T1-GE3 si1011x.pdf
SI1011X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V SC-89
Produkt ist nicht verfügbar
SI8466EDB-T2-E1 si8466edb.pdf
SI8466EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 2A, 4.5V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 4 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
Mindestbestellmenge: 3000
SIA449DJ-T1-GE3 sia449dj.pdf
SIA449DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
auf Bestellung 129000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
30000+ 0.31 EUR
75000+ 0.3 EUR
Mindestbestellmenge: 3000
SI1062X-T1-GE3 si1062x.pdf
SI1062X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
Power Dissipation (Max): 220mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 114000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
6000+ 0.18 EUR
9000+ 0.16 EUR
30000+ 0.15 EUR
75000+ 0.13 EUR
Mindestbestellmenge: 3000
SIA483DJ-T1-GE3 sia483dj.pdf
SIA483DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V
auf Bestellung 81000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.39 EUR
6000+ 0.37 EUR
9000+ 0.35 EUR
30000+ 0.34 EUR
Mindestbestellmenge: 3000
SIB417AEDK-T1-GE3 sib417aedk.pdf
SIB417AEDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PWRPACK
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SIRA18DP-T1-GE3 sira18dp.pdf
SIRA18DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 33A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
SI1480DH-T1-GE3 si1480dh.pdf
SI1480DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 2.6A SC70-6
Produkt ist nicht verfügbar
SIP32451DB-T2-GE1 sip32452.pdf
SIP32451DB-T2-GE1
Hersteller: Vishay Siliconix
Description: IC PWR SWITCH N-CHAN 1:1 4WCSP
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, CSPBGA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 54mOhm
Input Type: Non-Inverting
Voltage - Load: 0.9V ~ 2.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WCSP (0.76x0.76)
Fault Protection: Reverse Current
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
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