Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10949) > Seite 110 nach 183
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SJM187BIA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM187BIC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM187BXA | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM187BXC | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM190BEA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM190BEC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM190BXA | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM190BXC | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM191BXC | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM200BCA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM200BCC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM200BIA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM200BIC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM201BEA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM201BEAP1 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM201BEC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM300BCA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM300BCC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM300BIA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM300BIC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM301BCA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM301BCC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM301BIA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM301BIC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM302BCA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM302BCC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM304BCA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM304BCC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM304BIA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM304BIC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM306BCA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM306BCC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM307BCA01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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| SJM307BCC01 | Vishay Siliconix | Description: IC ANALOG SWITCH |
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SQ2348ES-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 8A TO236Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V |
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SQ3410EV-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V |
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| SQ3469EV-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 8A TSOP-6 |
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SQ4401EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 17.3A 8SOIC |
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SQ4920EY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 8A 8SO |
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SQ4946AEY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 7A 8SOIC |
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SQ9945BEY-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 5.4A 8SOIC |
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SQA410EJ-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 7.8A SC70-6 |
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SQD40N06-14L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 40A TO-252 |
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| SQD50N03-3M1L-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 30V 50A TO252 |
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SQD50N05-11L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 50V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V |
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SQJ422EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 74A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SQJ460EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 32A SO-8 |
Produkt ist nicht verfügbar |
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| SQJ848AEP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH D-S 40V PPAK 8SOIC |
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SQJ858AEP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 58A PPAK SO-8 |
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SQJ886EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 60A PPAK SO-8 |
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| SQJ912EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8-SO |
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SQJ940EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 15A PPAK SO-8 |
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SQJ960EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SO |
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| SQJ962EP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 8A 8SO |
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| SQM100N04-3M5-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO-263 |
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SQM120N03-1m5L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V |
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| SQM120N04-1M8-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 120A TO263 |
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SQM120N04-1m9_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V |
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SQM120N06-3m5L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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SQM200N04-1m1L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V |
Produkt ist nicht verfügbar |
| SQ2348ES-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Description: MOSFET N-CH 30V 8A TO236
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Produkt ist nicht verfügbar
| SQ3410EV-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
Description: MOSFET N-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
Produkt ist nicht verfügbar
| SQ3469EV-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A TSOP-6
Description: MOSFET P-CH 20V 8A TSOP-6
Produkt ist nicht verfügbar
| SQ4401EY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC
Description: MOSFET P-CH 40V 17.3A 8SOIC
Produkt ist nicht verfügbar
| SQ4920EY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SO
Description: MOSFET 2N-CH 30V 8A 8SO
Produkt ist nicht verfügbar
| SQ4946AEY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC
Description: MOSFET 2N-CH 60V 7A 8SOIC
Produkt ist nicht verfügbar
| SQ9945BEY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Description: MOSFET 2N-CH 60V 5.4A 8SOIC
Produkt ist nicht verfügbar
| SQA410EJ-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 7.8A SC70-6
Description: MOSFET N-CH 20V 7.8A SC70-6
Produkt ist nicht verfügbar
| SQD40N06-14L-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 40A TO-252
Description: MOSFET N-CH 60V 40A TO-252
Produkt ist nicht verfügbar
| SQD50N03-3M1L-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 30V 50A TO252
Description: MOSFET N-CH D-S 30V 50A TO252
Produkt ist nicht verfügbar
| SQD50N05-11L_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 50V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V
Description: MOSFET N-CH 50V 50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V
Produkt ist nicht verfügbar
| SQJ422EP-T1_GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 74A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 74A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.74 EUR |
| SQJ460EP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 32A SO-8
Description: MOSFET N-CH 60V 32A SO-8
Produkt ist nicht verfügbar
| SQJ848AEP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH D-S 40V PPAK 8SOIC
Description: MOSFET N-CH D-S 40V PPAK 8SOIC
Produkt ist nicht verfügbar
| SQJ858AEP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Description: MOSFET N-CH 40V 58A PPAK SO-8
Produkt ist nicht verfügbar
| SQJ886EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Description: MOSFET N-CH 40V 60A PPAK SO-8
Produkt ist nicht verfügbar
| SQJ912EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8-SO
Description: MOSFET 2N-CH 40V 8A 8-SO
Produkt ist nicht verfügbar
| SQJ940EP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Description: MOSFET 2N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
| SQJ960EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Description: MOSFET 2N-CH 60V 8A 8SO
Produkt ist nicht verfügbar
| SQJ962EP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 8A 8SO
Description: MOSFET 2N-CH 60V 8A 8SO
Produkt ist nicht verfügbar
| SQM100N04-3M5-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO-263
Description: MOSFET N-CH 40V 100A TO-263
Produkt ist nicht verfügbar
| SQM120N03-1m5L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V
Description: MOSFET N-CH 30V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15605 pF @ 15 V
Produkt ist nicht verfügbar
| SQM120N04-1M8-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Description: MOSFET N-CH 40V 120A TO263
Produkt ist nicht verfügbar
| SQM120N04-1m9_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
Produkt ist nicht verfügbar
| SQM120N06-3m5L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 29A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 5.95 EUR |
| SQM200N04-1m1L_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Produkt ist nicht verfügbar