Die Produkte vishay siliconix

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SQ4435EY-T1_BE3 SQ4435EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Drain to Source Voltage (Vdss): 30 V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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SQ4410EY-T1_BE3 SQ4410EY-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 30V 15A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
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Vishay Siliconix Description: MOSFET N-CH 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2428 Stücke
Lieferzeit 21-28 Tag (e)
SQ4435EY-T1_GE3 SQ4435EY-T1_GE3 sq4435ey.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SQ4425EY-T1_BE3 SQ4425EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4425
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Vishay Siliconix Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4425
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2495 Stücke
Lieferzeit 21-28 Tag (e)
SQ4483EY-T1_BE3 SQ4483EY-T1_BE3 Vishay Siliconix Description: MOSFET P-CHANNEL 30V 30A 8SOIC
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
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SQ4483EY-T1_GE3 SQ4483EY-T1_GE3 sq4483ey.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 30A 8SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SQ4410EY-T1_GE3 SQ4410EY-T1_GE3 sq4410ey.pdf Vishay Siliconix Description: MOSFET N-CH 30V 15A 8SO
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Vishay Siliconix Description: MOSFET N-CH 30V 15A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 535 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.08 EUR
10+ 3.64 EUR
100+ 2.84 EUR
500+ 2.34 EUR
SQ4470EY-T1_BE3 SQ4470EY-T1_BE3 Vishay Siliconix Description: MOSFET N-CH 60V 16A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
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Vishay Siliconix Description: MOSFET N-CH 60V 16A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2480 Stücke
Lieferzeit 21-28 Tag (e)
SQ4470EY-T1_GE3 SQ4470EY-T1_GE3 sq4470ey.pdf Vishay Siliconix Description: MOSFET N-CH 60V 16A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Vishay Siliconix Description: MOSFET N-CH 60V 16A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1652 Stücke
Lieferzeit 21-28 Tag (e)
SQ4483BEEY-T1_GE3 SQ4483BEEY-T1_GE3 sq4483beey.pdf Vishay Siliconix Description: MOSFET P-CHANNEL 30V 22A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
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Vishay Siliconix Description: MOSFET P-CHANNEL 30V 22A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1220 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.65 EUR
10+ 4.19 EUR
100+ 3.37 EUR
500+ 2.77 EUR
1000+ 2.37 EUR
SQM70060EL_GE3 SQM70060EL_GE3 sqm70060el.pdf Vishay Siliconix Description: MOSFET N-CH 100V 75A D2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQM70060
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 100V 75A D2PAK
Base Part Number: SQM70060
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2075 Stücke
Lieferzeit 21-28 Tag (e)
SUM10250E-GE3 SUM10250E-GE3 sum10250e.pdf Vishay Siliconix Description: MOSFET N-CH 250V 63.5A D2PAK
Base Part Number: SUM10250
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3002pF @ 125V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 250V 63.5A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SUM10250
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3002pF @ 125V
Vgs (Max): ±20V
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1193 Stücke
Lieferzeit 21-28 Tag (e)
SIHL630STRL-GE3 SIHL630STRL-GE3 sihl630s.pdf Vishay Siliconix Description: MOSFET N-CH 200V 9A D2PAK
Base Part Number: SIHL630
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFPS38N60L-GE3 SIHFPS38N60L-GE3 sihfps38n60l.pdf Vishay Siliconix Description: POWER MOSFET SUPER-247, 150 M @
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-274AA
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SUPER-247™ (TO-274AA)
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auf Bestellung 480 Stücke
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2+ 21.11 EUR
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SQD40020E_GE3 SQD40020E_GE3 sqd40020e.pdf Vishay Siliconix Description: MOSFET N-CH 40V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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SIC654ACD-T1-GE3 SIC654ACD-T1-GE3 sic654.pdf Vishay Siliconix Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
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Vishay Siliconix Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
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auf Bestellung 5899 Stücke
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SIHA120N60E-GE3 SIHA120N60E-GE3 siha120n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 25A TO220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
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auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.01 EUR
SI2369BDS-T1-GE3 SI2369BDS-T1-GE3 si2369bds.pdf Vishay Siliconix Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
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auf Bestellung 5274 Stücke
Lieferzeit 21-28 Tag (e)
SIRA32DP-T1-RE3 SIRA32DP-T1-RE3 sira32dp.pdf Vishay Siliconix Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Power Dissipation (Max): 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIRA32
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Vishay Siliconix Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Power Dissipation (Max): 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIRA32
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auf Bestellung 921 Stücke
Lieferzeit 21-28 Tag (e)
SI4922BDY-T1-GE3 SI4922BDY-T1-GE3 si4922bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Standard
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SIC477ED-T1-GE3 sic47x.pdf Vishay Siliconix Description: IC REG BUCK 8A PPPAK MLP55-27L
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
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Vishay Siliconix Description: IC REG BUCK 8A PPPAK MLP55-27L
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
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auf Bestellung 59 Stücke
Lieferzeit 21-28 Tag (e)
3+ 12.84 EUR
10+ 11.54 EUR
25+ 10.91 EUR
SIJA74DP-T1-GE3 SIJA74DP-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 40V 24A/81.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIJA74
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
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auf Bestellung 5825 Stücke
Lieferzeit 21-28 Tag (e)
SIJH112E-T1-GE3 SIJH112E-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 100V 23A/225A PPAK
Base Part Number: SIJH112
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 225A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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auf Bestellung 300 Stücke
Lieferzeit 21-28 Tag (e)
SISS54DN-T1-GE3 SISS54DN-T1-GE3 Vishay Siliconix Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
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SIC931BED-T1-GE3 SIC931BED-T1-GE3 sic931.pdf Vishay Siliconix Description: MICROBRICK DC/DC 20A REG MODULE
Packaging: Tape & Reel (TR)
Package / Case: 60-PowerBFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1MHz, 1.5MHz, 2MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: PowerPAK® MLP60-A6C
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
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Vishay Siliconix Description: MICROBRICK DC/DC 20A REG MODULE
Packaging: Cut Tape (CT)
Package / Case: 60-PowerBFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1MHz, 1.5MHz, 2MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: PowerPAK® MLP60-A6C
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
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auf Bestellung 924 Stücke
Lieferzeit 21-28 Tag (e)
SIR681DP-T1-RE3 SIR681DP-T1-RE3 sir681dp.pdf Vishay Siliconix Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SIHB21N80AE-GE3 SIHB21N80AE-GE3 Vishay Siliconix Description: MOSFET N-CH 800V 17.4A D2PAK
Base Part Number: SIHB21
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Vishay Siliconix
Supplier Device Package: D2PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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auf Bestellung 1050 Stücke
Lieferzeit 21-28 Tag (e)
SIHA690N60E-GE3 siha690n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 4.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 29W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
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auf Bestellung 1045 Stücke
Lieferzeit 21-28 Tag (e)
SIHP24N80AE-GE3 SIHP24N80AE-GE3 sihp24n80ae.pdf Vishay Siliconix Description: MOSFET N-CH 800V 21A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SUD50P08-25L-BE3 SUD50P08-25L-BE3 Vishay Siliconix Description: MOSFET P-CH 80V 12.5A/50A DPAK
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 50A (Tc)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SUM40014M-GE3 SUM40014M-GE3 sum40014m.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200A TO263-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15780pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 0.99Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
SQ4946CEY-T1_GE3 sq4946cey.pdf Vishay Siliconix Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Base Part Number: SQ4946
Supplier Device Package: 8-SOIC
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
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SIC645AER-T1-GE3 SIC645AER-T1-GE3 sic645.pdf Vishay Siliconix Description: IC PWR STAGE 60A 3.3V MLP55-32L
Technology: NMOS
Applications: Synchronous Buck Converters, Voltage Regulators
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Voltage - Supply: 4.75 ~ 5.25V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 32-PowerWFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Voltage - Load: 4.5V ~ 18V
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auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 6.29 EUR
Vishay Siliconix Description: IC PWR STAGE 60A 3.3V MLP55-32L
Part Status: Active
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Voltage - Load: 4.5V ~ 18V
Technology: NMOS
Applications: Synchronous Buck Converters, Voltage Regulators
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Voltage - Supply: 4.75 ~ 5.25V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 32-PowerWFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
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SI1401EDH-T1-BE3 SI1401EDH-T1-BE3 si1401ed.pdf Vishay Siliconix Description: MOSFET P-CH 12V 4A/4A SC70-6
Base Part Number: SI1401
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: MOSFET P-CH 12V 4A/4A SC70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1401
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
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SI7190ADP-T1-RE3 SI7190ADP-T1-RE3 si7190adp.pdf Vishay Siliconix Description: MOSFET N-CH 250V 4.3A/14.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SQ2361AEES-T1_BE3 SQ2361AEES-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
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SIHP052N60EF-GE3 SIHP052N60EF-GE3 sihp052n60ef.pdf Vishay Siliconix Description: MOSFET EF SERIES TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SIDR626LDP-T1-RE3 SIDR626LDP-T1-RE3 Vishay Siliconix Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
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SIJA58ADP-T1-GE3 SIJA58ADP-T1-GE3 sija58adp.pdf Vishay Siliconix Description: MOSFET N-CH 40V 32.3A/109A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJA58
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Vishay Siliconix Description: MOSFET N-CH 40V 32.3A/109A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJA58
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SIZ320DT-T1-GE3 SIZ320DT-T1-GE3 siz320dt.pdf Vishay Siliconix Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
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SQ3426AEEV-T1_GE3 SQ3426AEEV-T1_GE3 sq3426eev.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7A 6TSOP
Base Part Number: SQ3426
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SQD40N10-25-T4_GE3 SQD40N10-25.pdf Vishay Siliconix Description: MOSFET N-CH 100V 40A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
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SIC472ED-T1-GE3 SIC472ED-T1-GE3 SiC47x_Jul04_2018.pdf Vishay Siliconix Description: IC REG BUCK ADJ 8A MLP55-27
Synchronous Rectifier: Yes
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 50.6V
Supplier Device Package: PowerPAK® MLP55-27
Frequency - Switching: 20kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Topology: Buck
Voltage - Input (Max): 55V
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Vishay Siliconix Description: IC REG BUCK ADJ 8A MLP55-27
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 50.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 20kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
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250+ 7.19 EUR
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SIC657CD-T1-GE3 SIC657CD-T1-GE3 sic657.pdf Vishay Siliconix Description: IC POWER STAGE 50A MLP31-55
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 55A
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Vishay Siliconix Description: IC POWER STAGE 50A MLP31-55
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 55A
Current - Output / Channel: 50A
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SIR104DP-T1-RE3 SIR104DP-T1-RE3 sir104dp.pdf Vishay Siliconix Description: MOSFET N-CH 100V 18.3A/79A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 50V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR104
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Vishay Siliconix Description: MOSFET N-CH 100V 18.3A/79A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 50V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR104
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DG413HSDN-T1-E4 DG413HSDN-T1-E4 dg411hs.pdf Vishay Siliconix Description: IC SWITCH QUAD SPST 16-QFN 4XX4
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
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Vishay Siliconix Description: IC SWITCH QUAD SPST 16-QFN 4XX4
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
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SI1078X-T1-GE3 SI1078X-T1-GE3 si1078x.pdf Vishay Siliconix Description: MOSFET N-CH 30V 1.02A SOT563F
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Power Dissipation (Max): 240mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
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SQA470EJ-T1_GE3 SQA470EJ-T1_GE3 sqa470ej.pdf Vishay Siliconix Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 20V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
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Vishay Siliconix Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 20V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
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SIC820ED-T1-GE3 Vishay Siliconix Description: IC POWER STAGE 80A 5X6 MLP
Voltage - Load: 12V
Technology: Power MOSFET
Current - Output / Channel: 80A
Applications: DC-DC Converters, Synchronous Buck Converter
Voltage - Supply: 3.3V ~ 5V
Output Configuration: High Side
Part Status: Active
Load Type: Inductive
Fault Protection: Over Current, Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP39-65
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
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Lieferzeit 21-28 Tag (e)
2+ 16.95 EUR
10+ 15.24 EUR
25+ 14.41 EUR
100+ 12.49 EUR
250+ 11.85 EUR
500+ 10.63 EUR
1000+ 9.97 EUR
SIC820AED-T1-GE3 sic820.pdf Vishay Siliconix Description: IC PWR STAGE 80 A CURRENT MONITO
Packaging: Tape & Reel (TR)
Part Status: Active
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IRFD9010PBF IRFD9010PBF sihfd901.pdf Vishay Siliconix Description: MOSFET P-CH 50V 1.1A 4DIP
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: WEC
Base Part Number: IRFD9010
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
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auf Bestellung 413 Stücke
Lieferzeit 21-28 Tag (e)
SUD40151EL-GE3 SUD40151EL-GE3 sud40151el.pdf Vishay Siliconix Description: MOSFET P-CH 40V 42A TO252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 17.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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SQJB02ELP-T1_GE3 Vishay Siliconix Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Base Part Number: SQJB02
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJB02
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
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auf Bestellung 11487 Stücke
Lieferzeit 21-28 Tag (e)
SQJA80EP-T1_GE3 SQJA80EP-T1_GE3 sqja80ep.pdf Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA80
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
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auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 80V 60A PPAK SO-8
Base Part Number: SQJA80
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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auf Bestellung 6074 Stücke
Lieferzeit 21-28 Tag (e)
SQ2309ES-T1_BE3 SQ2309ES-T1_BE3 Vishay Siliconix Description: MOSFET P-CH 60V 1.7A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SQ2309
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auf Bestellung 3045 Stücke
Lieferzeit 21-28 Tag (e)
IRFZ14PBF-BE3 IRFZ14PBF-BE3 91289.pdf Vishay Siliconix Description: MOSFET N-CH 60V 10A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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auf Bestellung 1978 Stücke
Lieferzeit 21-28 Tag (e)
8+ 3.43 EUR
10+ 3.07 EUR
100+ 2.39 EUR
500+ 1.98 EUR
1000+ 1.56 EUR
SQS484CENW-T1_GE3 SQS484CENW-T1_GE3 sqs484cenw.pdf Vishay Siliconix Description: MOSFET N-CH 40V 16A PPAK 1212-8W
Base Part Number: SQS484
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
Vishay Siliconix Description: MOSFET N-CH 40V 16A PPAK 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS484
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
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auf Bestellung 4517 Stücke
Lieferzeit 21-28 Tag (e)
SI4056ADY-T1-GE3 SI4056ADY-T1-GE3 si4056ady.pdf Vishay Siliconix Description: MOSFET N-CH 100V 5.9A/8.3A 8SOIC
Base Part Number: SI4056
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29.2mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 8.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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SIZ328DT-T1-GE3 SIZ328DT-T1-GE3 siz328dt.pdf Vishay Siliconix Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
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Vishay Siliconix Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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auf Bestellung 2860 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.18 EUR
14+ 1.92 EUR
100+ 1.47 EUR
500+ 1.16 EUR
1000+ 0.93 EUR
SST4416-T1-E3 SST4416-T1-E3 2N4416,2N4416A.SST4416.pdf Vishay Siliconix Description: JFET N-CH 36V 5MA SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
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SIS429DNT-T1-GE3 SIS429DNT-T1-GE3 sis429dnt.pdf Vishay Siliconix Description: MOSFET P-CH 30V 20A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Power Dissipation (Max): 27.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS429
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SI5902BDC-T1-E3 SI5902BDC-T1-E3 si5902bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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Vishay Siliconix Description: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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auf Bestellung 5 Stücke
Lieferzeit 21-28 Tag (e)
SIHB33N60ET5-GE3 SIHB33N60ET5-GE3 sihb33n60e.pdf Vishay Siliconix Description: MOSFET N-CH 600V 33A TO263
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Power Dissipation (Max): 278W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB33
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SQ4435EY-T1_BE3
SQ4435EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Drain to Source Voltage (Vdss): 30 V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4410EY-T1_BE3
SQ4410EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SOIC
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SQ4410EY-T1_BE3
SQ4410EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2428 Stücke
Lieferzeit 21-28 Tag (e)
SQ4435EY-T1_GE3 sq4435ey.pdf
SQ4435EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 15A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4425EY-T1_BE3
SQ4425EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4425
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2495 Stücke - Preis und Lieferfrist anzeigen
SQ4425EY-T1_BE3
SQ4425EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 18A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3630pF @ 25V
Power Dissipation (Max): 6.8W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4425
auf Bestellung 2495 Stücke
Lieferzeit 21-28 Tag (e)
SQ4483EY-T1_BE3
SQ4483EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 30A 8SOIC
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4483EY-T1_GE3 sq4483ey.pdf
SQ4483EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 30A 8SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ4410EY-T1_GE3 sq4410ey.pdf
SQ4410EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SO
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 535 Stücke - Preis und Lieferfrist anzeigen
SQ4410EY-T1_GE3 sq4410ey.pdf
SQ4410EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SO
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 25 V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
auf Bestellung 535 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.08 EUR
10+ 3.64 EUR
100+ 2.84 EUR
500+ 2.34 EUR
SQ4470EY-T1_BE3
SQ4470EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2480 Stücke - Preis und Lieferfrist anzeigen
SQ4470EY-T1_BE3
SQ4470EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SOIC
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
auf Bestellung 2480 Stücke
Lieferzeit 21-28 Tag (e)
SQ4470EY-T1_GE3 sq4470ey.pdf
SQ4470EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SO
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1652 Stücke - Preis und Lieferfrist anzeigen
SQ4470EY-T1_GE3 sq4470ey.pdf
SQ4470EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 16A 8SO
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3165pF @ 25V
Power Dissipation (Max): 7.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Manufacturer: Vishay Siliconix
Base Part Number: SQ4470
auf Bestellung 1652 Stücke
Lieferzeit 21-28 Tag (e)
SQ4483BEEY-T1_GE3 sq4483beey.pdf
SQ4483BEEY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 22A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1220 Stücke - Preis und Lieferfrist anzeigen
SQ4483BEEY-T1_GE3 sq4483beey.pdf
SQ4483BEEY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 22A 8SOIC
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 1220 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.65 EUR
10+ 4.19 EUR
100+ 3.37 EUR
500+ 2.77 EUR
1000+ 2.37 EUR
SQM70060EL_GE3 sqm70060el.pdf
SQM70060EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 75A D2PAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SQM70060
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2075 Stücke - Preis und Lieferfrist anzeigen
SQM70060EL_GE3 sqm70060el.pdf
SQM70060EL_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 75A D2PAK
Base Part Number: SQM70060
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
auf Bestellung 2075 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1600 Stücke - Preis und Lieferfrist anzeigen
SUM10250E-GE3 sum10250e.pdf
SUM10250E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 63.5A D2PAK
Base Part Number: SUM10250
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3002pF @ 125V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1193 Stücke - Preis und Lieferfrist anzeigen
SUM10250E-GE3 sum10250e.pdf
SUM10250E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 63.5A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Base Part Number: SUM10250
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3002pF @ 125V
Vgs (Max): ±20V
auf Bestellung 1193 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 800 Stücke - Preis und Lieferfrist anzeigen
SIHL630STRL-GE3 sihl630s.pdf
SIHL630STRL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK
Base Part Number: SIHL630
Manufacturer: Vishay Siliconix
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHFPS38N60L-GE3 sihfps38n60l.pdf
SIHFPS38N60L-GE3
Hersteller: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 150 M @
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-274AA
Input Capacitance (Ciss) (Max) @ Vds: 7990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SUPER-247™ (TO-274AA)
auf Bestellung 480 Stücke
Lieferzeit 21-28 Tag (e)
2+ 21.11 EUR
10+ 19.07 EUR
100+ 15.79 EUR
SQD40020E_GE3 sqd40020e.pdf
SQD40020E_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 21 Stücke - Preis und Lieferfrist anzeigen
SIC654ACD-T1-GE3 sic654.pdf
SIC654ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5899 Stücke - Preis und Lieferfrist anzeigen
SIC654ACD-T1-GE3 sic654.pdf
SIC654ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: 50A VR POWER (DRMOS) PLUS 3.3V P
Current - Output / Channel: 50A
Applications: General Purpose
Rds On (Typ): 3Ohm LS + HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 100A
auf Bestellung 5899 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIHA120N60E-GE3 siha120n60e.pdf
SIHA120N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
auf Bestellung 9 Stücke
Lieferzeit 21-28 Tag (e)
2+ 14.01 EUR
SI2369BDS-T1-GE3 si2369bds.pdf
SI2369BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.6A/7.5A SOT23
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 7.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 745 pF @ 15 V
auf Bestellung 5274 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIRA32DP-T1-RE3 sira32dp.pdf
SIRA32DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Power Dissipation (Max): 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIRA32
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 921 Stücke - Preis und Lieferfrist anzeigen
SIRA32DP-T1-RE3 sira32dp.pdf
SIRA32DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Vgs (Max): +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds: 4450pF @ 10V
Power Dissipation (Max): 65.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Manufacturer: Vishay Siliconix
Base Part Number: SIRA32
auf Bestellung 921 Stücke
Lieferzeit 21-28 Tag (e)
SI4922BDY-T1-GE3 si4922bd.pdf
SI4922BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC477ED-T1-GE3 sic47x.pdf
Hersteller: Vishay Siliconix
Description: IC REG BUCK 8A PPPAK MLP55-27L
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 459 Stücke - Preis und Lieferfrist anzeigen
SIC477ED-T1-GE3 sic47x.pdf
Hersteller: Vishay Siliconix
Description: IC REG BUCK 8A PPPAK MLP55-27L
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 24V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 100kHz ~ 2MHz
auf Bestellung 59 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 400 Stücke - Preis und Lieferfrist anzeigen
3+ 12.84 EUR
10+ 11.54 EUR
25+ 10.91 EUR
SIJA74DP-T1-GE3
SIJA74DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 24A/81.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Vgs (Max): +20V, -16V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.99mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 81.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SIJA74
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.1W (Ta), 46.2W (Tc)
auf Bestellung 5825 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIJH112E-T1-GE3
SIJH112E-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23A/225A PPAK
Base Part Number: SIJH112
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8050pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 225A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 300 Stücke
Lieferzeit 21-28 Tag (e)
SISS54DN-T1-GE3
SISS54DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET POWE
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51.1A (Ta), 185.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.06mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 15 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC931BED-T1-GE3 sic931.pdf
SIC931BED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBRICK DC/DC 20A REG MODULE
Packaging: Tape & Reel (TR)
Package / Case: 60-PowerBFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1MHz, 1.5MHz, 2MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: PowerPAK® MLP60-A6C
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 924 Stücke - Preis und Lieferfrist anzeigen
SIC931BED-T1-GE3 sic931.pdf
SIC931BED-T1-GE3
Hersteller: Vishay Siliconix
Description: MICROBRICK DC/DC 20A REG MODULE
Packaging: Cut Tape (CT)
Package / Case: 60-PowerBFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1MHz, 1.5MHz, 2MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: PowerPAK® MLP60-A6C
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Active
auf Bestellung 924 Stücke
Lieferzeit 21-28 Tag (e)
SIR681DP-T1-RE3 sir681dp.pdf
SIR681DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHB21N80AE-GE3
SIHB21N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 17.4A D2PAK
Base Part Number: SIHB21
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Vishay Siliconix
Supplier Device Package: D2PAK (TO-263)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1388pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 1050 Stücke
Lieferzeit 21-28 Tag (e)
SIHA690N60E-GE3 siha690n60e.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 4.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 347 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 29W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Rds On (Max) @ Id, Vgs: 700mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
auf Bestellung 1045 Stücke
Lieferzeit 21-28 Tag (e)
SIHP24N80AE-GE3 sihp24n80ae.pdf
SIHP24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO220AB
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUD50P08-25L-BE3
SUD50P08-25L-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 12.5A/50A DPAK
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 50A (Tc)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SUM40014M-GE3 sum40014m.pdf
SUM40014M-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package: TO-263-7
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 15780pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 0.99Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 37 Stücke - Preis und Lieferfrist anzeigen
SQ4946CEY-T1_GE3 sq4946cey.pdf
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 60 V (
Base Part Number: SQ4946
Supplier Device Package: 8-SOIC
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 4W (Tc)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC645AER-T1-GE3 sic645.pdf
SIC645AER-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR STAGE 60A 3.3V MLP55-32L
Technology: NMOS
Applications: Synchronous Buck Converters, Voltage Regulators
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Voltage - Supply: 4.75 ~ 5.25V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 32-PowerWFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Voltage - Load: 4.5V ~ 18V
auf Bestellung 15000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 17187 Stücke - Preis und Lieferfrist anzeigen
3000+ 6.29 EUR
SIC645AER-T1-GE3 sic645.pdf
SIC645AER-T1-GE3
Hersteller: Vishay Siliconix
Description: IC PWR STAGE 60A 3.3V MLP55-32L
Part Status: Active
Load Type: Inductive
Fault Protection: Current Limiting, Over Temperature, Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-32 Double Cooling
Voltage - Load: 4.5V ~ 18V
Technology: NMOS
Applications: Synchronous Buck Converters, Voltage Regulators
Rds On (Typ): 0.76mOhm LS, 3.6mOhm HS
Voltage - Supply: 4.75 ~ 5.25V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 32-PowerWFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
auf Bestellung 17187 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15000 Stücke - Preis und Lieferfrist anzeigen
3+ 10.71 EUR
10+ 9.61 EUR
25+ 9.09 EUR
100+ 7.88 EUR
250+ 7.47 EUR
500+ 6.71 EUR
1000+ 6.29 EUR
SI1401EDH-T1-BE3 si1401ed.pdf
SI1401EDH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A/4A SC70-6
Base Part Number: SI1401
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2950 Stücke - Preis und Lieferfrist anzeigen
SI1401EDH-T1-BE3 si1401ed.pdf
SI1401EDH-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A/4A SC70-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1401
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 8V
auf Bestellung 2950 Stücke
Lieferzeit 21-28 Tag (e)
SI7190ADP-T1-RE3 si7190adp.pdf
SI7190ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 4.3A/14.4A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 102mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 14.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2410 Stücke - Preis und Lieferfrist anzeigen
SQ2361AEES-T1_BE3
SQ2361AEES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIHP052N60EF-GE3 sihp052n60ef.pdf
SIHP052N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET EF SERIES TO-220AB
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 960 Stücke
Lieferzeit 21-28 Tag (e)
2+ 18.56 EUR
10+ 16.68 EUR
100+ 13.66 EUR
500+ 11.63 EUR
SIDR626LDP-T1-RE3
SIDR626LDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/2.4A PPAK
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIJA58ADP-T1-GE3 sija58adp.pdf
SIJA58ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32.3A/109A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJA58
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5968 Stücke - Preis und Lieferfrist anzeigen
SIJA58ADP-T1-GE3 sija58adp.pdf
SIJA58ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 32.3A/109A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 32.3A (Ta), 109A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 20V
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIJA58
auf Bestellung 5968 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SIZ320DT-T1-GE3 siz320dt.pdf
SIZ320DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 30/40A 8POWER33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V, 11.9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 12.5V, 1370pF @ 12.5V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 40A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 16.7W, 31W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQ3426AEEV-T1_GE3 sq3426eev.pdf
SQ3426AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Base Part Number: SQ3426
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Mounting Type: Surface Mount
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 4805 Stücke
Lieferzeit 21-28 Tag (e)
SQD40N10-25-T4_GE3 SQD40N10-25.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIC472ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC472ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 8A MLP55-27
Synchronous Rectifier: Yes
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 50.6V
Supplier Device Package: PowerPAK® MLP55-27
Frequency - Switching: 20kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Tape & Reel (TR)
Topology: Buck
Voltage - Input (Max): 55V
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 6489 Stücke - Preis und Lieferfrist anzeigen
3000+ 6.05 EUR
SIC472ED-T1-GE3 SiC47x_Jul04_2018.pdf
SIC472ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 8A MLP55-27
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 50.6V
Synchronous Rectifier: Yes
Supplier Device Package: PowerPAK® MLP55-27
Topology: Buck
Voltage - Input (Max): 55V
Frequency - Switching: 20kHz ~ 2MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 105°C (TA)
Current - Output: 8A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: PowerPAK® MLP55-27
Packaging: Cut Tape (CT)
auf Bestellung 6489 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
3+ 10.3 EUR
10+ 9.25 EUR
25+ 8.74 EUR
100+ 7.57 EUR
250+ 7.19 EUR
500+ 6.45 EUR
1000+ 6.05 EUR
SIC657CD-T1-GE3 sic657.pdf
SIC657CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 50A MLP31-55
Current - Output / Channel: 50A
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Tape & Reel (TR)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 55A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
SIC657CD-T1-GE3 sic657.pdf
SIC657CD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 50A MLP31-55
Applications: General Purpose
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: PowerPAK® MLP55-31L
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: Shoot-Through, UVLO
Supplier Device Package: PowerPAK® MLP55-31L
Voltage - Load: 24V
Technology: Power MOSFET
Current - Peak Output: 55A
Current - Output / Channel: 50A
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.05 EUR
10+ 6.33 EUR
SIR104DP-T1-RE3 sir104dp.pdf
SIR104DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.3A/79A PPAK
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 50V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR104
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2970 Stücke - Preis und Lieferfrist anzeigen
SIR104DP-T1-RE3 sir104dp.pdf
SIR104DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.3A/79A PPAK
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 50V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Base Part Number: SIR104
auf Bestellung 2970 Stücke
Lieferzeit 21-28 Tag (e)
DG413HSDN-T1-E4 dg411hs.pdf
DG413HSDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4XX4
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2966 Stücke - Preis und Lieferfrist anzeigen
DG413HSDN-T1-E4 dg411hs.pdf
DG413HSDN-T1-E4
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-QFN 4XX4
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Circuits: 4
Part Status: Active
Current - Leakage (IS(off)) (Max): 250pA
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO/NC
Crosstalk: -88dB @ 1MHz
Charge Injection: 22pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 12V
Supplier Device Package: 16-QFN (4x4)
On-State Resistance (Max): 35Ohm
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 42 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2924 Stücke - Preis und Lieferfrist anzeigen
3+ 11.75 EUR
10+ 10.56 EUR
25+ 9.98 EUR
SI1078X-T1-GE3 si1078x.pdf
SI1078X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.02A SOT563F
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.02A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 142mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 15V
Power Dissipation (Max): 240mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQA470EJ-T1_GE3 sqa470ej.pdf
SQA470EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 20V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 19 Stücke - Preis und Lieferfrist anzeigen
SQA470EJ-T1_GE3 sqa470ej.pdf
SQA470EJ-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.25A PPAK SC70
Packaging: Cut Tape (CT)
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 20V
Power Dissipation (Max): 13.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6 Single
Package / Case: PowerPAK® SC-70-6
auf Bestellung 19 Stücke
Lieferzeit 21-28 Tag (e)
SIC820ED-T1-GE3
Hersteller: Vishay Siliconix
Description: IC POWER STAGE 80A 5X6 MLP
Voltage - Load: 12V
Technology: Power MOSFET
Current - Output / Channel: 80A
Applications: DC-DC Converters, Synchronous Buck Converter
Voltage - Supply: 3.3V ~ 5V
Output Configuration: High Side
Part Status: Active
Load Type: Inductive
Fault Protection: Over Current, Over Temperature, UVLO
Supplier Device Package: PowerPAK® MLP39-65
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 39-PowerVFQFN
Features: Bootstrap Circuit, Diode Emulation
Packaging: Cut Tape (CT)
auf Bestellung 2400 Stücke
Lieferzeit 21-28 Tag (e)
2+ 16.95 EUR
10+ 15.24 EUR
25+ 14.41 EUR
100+ 12.49 EUR
250+ 11.85 EUR
500+ 10.63 EUR
1000+ 9.97 EUR
SIC820AED-T1-GE3 sic820.pdf
Hersteller: Vishay Siliconix
Description: IC PWR STAGE 80 A CURRENT MONITO
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFD9010PBF sihfd901.pdf
IRFD9010PBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 1.1A 4DIP
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Bulk
Manufacturer: WEC
Base Part Number: IRFD9010
Package / Case: 4-DIP (0.300", 7.62mm)
Supplier Device Package: 4-HVMDIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 500mOhm @ 580mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 413 Stücke
Lieferzeit 21-28 Tag (e)
SUD40151EL-GE3 sud40151el.pdf
SUD40151EL-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 42A TO252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5340pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 12mOhm @ 17.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SQJB02ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Base Part Number: SQJB02
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SQJB02ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQJB02
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Supplier Device Package: PowerPAK® SO-8 Dual
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 27W
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
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Lieferzeit 21-28 Tag (e)
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SQJA80EP-T1_GE3 sqja80ep.pdf
SQJA80EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SQJA80
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
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Lieferzeit 21-28 Tag (e)
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SQJA80EP-T1_GE3 sqja80ep.pdf
SQJA80EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 60A PPAK SO-8
Base Part Number: SQJA80
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SQ2309ES-T1_BE3
SQ2309ES-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.7A SOT23-3
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 335mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Base Part Number: SQ2309
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Lieferzeit 21-28 Tag (e)
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IRFZ14PBF-BE3 91289.pdf
IRFZ14PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 10A TO220AB
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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Lieferzeit 21-28 Tag (e)
8+ 3.43 EUR
10+ 3.07 EUR
100+ 2.39 EUR
500+ 1.98 EUR
1000+ 1.56 EUR
SQS484CENW-T1_GE3 sqs484cenw.pdf
SQS484CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK 1212-8W
Base Part Number: SQS484
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Lieferzeit 21-28 Tag (e)
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SQS484CENW-T1_GE3 sqs484cenw.pdf
SQS484CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 16A PPAK 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SQS484
Package / Case: PowerPAK® 1212-8W
Supplier Device Package: PowerPAK® 1212-8W
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Lieferzeit 21-28 Tag (e)
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SI4056ADY-T1-GE3 si4056ady.pdf
SI4056ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.9A/8.3A 8SOIC
Base Part Number: SI4056
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 29.2mOhm @ 5.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 8.3A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIZ328DT-T1-GE3 siz328dt.pdf
SIZ328DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIZ328DT-T1-GE3 siz328dt.pdf
SIZ328DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CHAN 25V POWERPAIR
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V, 11.3nC @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V, 600pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 25V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Supplier Device Package: 8-Power33 (3x3)
Power - Max: 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2860 Stücke
Lieferzeit 21-28 Tag (e)
12+ 2.18 EUR
14+ 1.92 EUR
100+ 1.47 EUR
500+ 1.16 EUR
1000+ 0.93 EUR
SST4416-T1-E3 2N4416,2N4416A.SST4416.pdf
SST4416-T1-E3
Hersteller: Vishay Siliconix
Description: JFET N-CH 36V 5MA SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIS429DNT-T1-GE3 sis429dnt.pdf
SIS429DNT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 20A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Power Dissipation (Max): 27.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SIS429
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5902BDC-T1-E3 si5902bd.pdf
SI5902BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5902BDC-T1-E3 si5902bd.pdf
SI5902BDC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
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Lieferzeit 21-28 Tag (e)
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SIHB33N60ET5-GE3 sihb33n60e.pdf
SIHB33N60ET5-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 33A TO263
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 3508pF @ 100V
Power Dissipation (Max): 278W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D²Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: SIHB33
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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