Die Produkte vishay siliconix
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
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SIHA17N80E-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 800V Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQJB68EP-T1_BE3 |
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Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) 175C Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drain to Source Voltage (Vdss): 100V FET Type: 2 N-Channel (Dual) Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQ2318BES-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 8A SOT23-3 Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIHA20N50E-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 500V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHP14N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Part Status: Active Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 147W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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.jpg "SI2302CDS-T1-BE3") |
SI2302CDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 9 Stücke Lieferzeit 21-28 Tag (e) |
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SI2302DDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 850mV @ 250µA Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2306BDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 750mW (Ta) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2300DS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc) Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 3.6A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2301BDS-T1-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 2.5-V (G-S) MOSFET Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2301CDS-T1-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
.jpg "SIHB120N60E-T1-GE3") |
SIHB120N60E-T1-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHB120N60E-T5-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2304BDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 750mW (Ta) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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IRF9610STRRPBF |
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Vishay Siliconix |
Description: N-CHANNEL200V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3W (Ta), 20W (Tc) Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHB22N65E-T1-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 650V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Drive Voltage (Max Rds On, Min Rds On): 10V Mounting Type: Surface Mount Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2365EDS-T1-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHK055N60E-T1-GE3 |
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Vishay Siliconix |
Description: E SERIES POWER MOSFET POWERPAK 1 Input Capacitance (Ciss) (Max) @ Vds: 3504 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK®10 x 12 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 236W (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SI2308BDS-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc) Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.3A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
.jpg "SIHLU024-GE3") |
SIHLU024-GE3 |
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Vishay Siliconix |
Description: LOGIC MOSFET N-CHANNEL 60V Part Status: Active Supplier Device Package: TO-251AA Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 4V, 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
.jpg "IRFR9210PBF-BE3") |
IRFR9210PBF-BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 200V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) FET Type: P-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR638DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.88mhm @ 20A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHP12N50E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 500V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 500 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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SIHF9Z24STRR-GE3 |
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Vishay Siliconix |
Description: MOSFET P-CHANNEL 60V Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG444DY |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16SOIC Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 4pF, 4pF Switch Time (Ton, Toff) (Max): 250ns, 140ns Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tube Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -100dB @ 1MHz Charge Injection: -1pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 5V ~ 36V Supplier Device Package: 16-SOIC On-State Resistance (Max): 85Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Number of Circuits: 4 Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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DG444DJ |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16DIP On-State Resistance (Max): 85Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube Number of Circuits: 4 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 4pF, 4pF Switch Time (Ton, Toff) (Max): 250ns, 140ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -100dB @ 1MHz Charge Injection: -1pC Voltage - Supply, Dual (V±): ±5V ~ 20V Voltage - Supply, Single (V+): 5V ~ 36V Supplier Device Package: 16-PDIP |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 396 Stücke - Preis und Lieferfrist anzeigen
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DG444BDJ |
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Vishay Siliconix |
Description: IC SWITCH QUAD SPST 16DIP Switch Time (Ton, Toff) (Max): 300ns, 200ns Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NC Crosstalk: -95dB @ 100kHz Charge Injection: 1pC Voltage - Supply, Dual (V±): ±15V Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 12V Number of Circuits: 4 Part Status: Obsolete Current - Leakage (IS(off)) (Max): 500pA Channel Capacitance (CS(off), CD(off)): 5pF, 5pF On-State Resistance (Max): 80Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIHA6N65E-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 650V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Packaging: Tape & Reel (TR) Package / Case: TO-220-3 Full Pack |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: N-CHANNEL 650V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Full Pack Part Status: Active Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Cut Tape (CT) |
auf Bestellung 1000 Stücke Lieferzeit 21-28 Tag (e) |
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SIHP15N60E-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
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SIHA15N60E-GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Full Pack Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR402DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQD40061EL-T4_GE3 |
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Vishay Siliconix |
Description: P-CHANNEL 40-V (D-S) 175C MOSFET Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQ2389ES-T1_BE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 4.1A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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IRFR420PBF-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 500V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SQ3410EV-T1_BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) 175C MOSFET Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) 175C MOSFET Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SQ3469EV-T1_BE3 |
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Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) 175C MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 25µA Power Dissipation (Max): 5W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) 175C MOSFET Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 25µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V |
auf Bestellung 1080 Stücke Lieferzeit 21-28 Tag (e) |
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SI3442BDV-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 2.5-V (G-S) MOSFET Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: N-CHANNEL 2.5-V (G-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 2840 Stücke Lieferzeit 21-28 Tag (e) |
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SI3424CDV-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V |
auf Bestellung 2986 Stücke Lieferzeit 21-28 Tag (e) |
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SI3460BDV-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta), 3.5W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 398 Stücke Lieferzeit 21-28 Tag (e) |
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SI3464DV-T1-BE3 |
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Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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| Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Power Dissipation (Max): 2W (Ta), 3.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SQJ850EP-T2_GE3 |
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Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR570EP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) 175C MOSFE Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR392DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30-V (D-S) MOSFET Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +20V, -16V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR140DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 25-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): +20V, -16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR610DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 200-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR510EP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) 175C MOSFE Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR622DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 150-V (D-S) MOSFET Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR626DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR870ADP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR668DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR500EP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) 175C MOSFET Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR220DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 25-V (D-S) MOSFET Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): +16V, -12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
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SIDR680DP-T1-RE3 |
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Vishay Siliconix |
Description: N-CHANNEL 80-V (D-S) MOSFET Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8DC Vgs(th) (Max) @ Id: 3.4V @ 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| DG1411EEQ-T1-GE3 |
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Vishay Siliconix |
Description: IC ANLG SWITCH QUAD SPST 16TSSOP Packaging: Tape & Reel (TR) Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 1.8Ohm -3db Bandwidth: 210MHz Voltage - Supply, Single (V+): 4.5V ~ 24V Voltage - Supply, Dual (V±): ±4.5V ~ 15V Charge Injection: -20pC Crosstalk: -100dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 80mOhm Switch Time (Ton, Toff) (Max): 150ns, 120ns Channel Capacitance (CS(off), CD(off)): 11pF, 24pF Current - Leakage (IS(off)) (Max): 500pA Part Status: Active Number of Circuits: 4 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||||||||||
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SIZ240DT-T1-GE3 |
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Vishay Siliconix |
Description: MOSFET DUAL N-CH 40V POWERPAIR 3 FET Type: 2 N-Channel (Dual) Power - Max: 4.3W (Ta), 33W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-PowerPair® (3.3x3.3) Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V Drain to Source Voltage (Vdss): 40V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
.jpg "SIHD5N80AE-GE3") |
SIHD5N80AE-GE3 |
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Vishay Siliconix |
Description: E SERIES POWER MOSFET DPAK (TO-2 Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 3000 Stücke Lieferzeit 21-28 Tag (e) |
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SQM100N04-2M7_GE3 |
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Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||
| SQJ951EP-T1_BE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 30V 30A PPAK Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 P-Channel (Dual) Power - Max: 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||
| Vishay Siliconix |
Description: MOSFET 2P-CH 30V 30A PPAK Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: 2 P-Channel (Dual) Power - Max: 56W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
auf Bestellung 273 Stücke Lieferzeit 21-28 Tag (e) |
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| SIHA17N80E-GE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 800V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
| SQJB68EP-T1_BE3 |
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Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DUAL N-CHANNEL 100-V (D-S) 175C
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 100V
FET Type: 2 N-Channel (Dual)
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
| SQ2318BES-T1_GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 8A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
| SIHA20N50E-GE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
| SIHP14N60E-BE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Part Status: Active
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Part Status: Active
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| SI2302CDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 9 Stücke - Preis und Lieferfrist anzeigen
| SI2302CDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 9 Stücke Description: N-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Lieferzeit 21-28 Tag (e)
| SI2302DDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Power Dissipation (Max): 710mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
| SI2306BDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
| SI2300DS-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30-V (D-S) MOSFET
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 1.7W (Tc)
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 2.9A, 4.5V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
| SI2301BDS-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: P-CHANNEL 2.5-V (G-S) MOSFET
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 2.5-V (G-S) MOSFET
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| SI2301CDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 860mW (Ta), 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
| SIHB120N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| SIHB120N60E-T5-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 179W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
| SI2304BDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30-V (D-S) MOSFET
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
| IRF9610STRRPBF |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL200V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL200V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 20W (Tc)
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
| SIHB22N65E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 650V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
| SI2365EDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 20-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| SIHK055N60E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 3504 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: E SERIES POWER MOSFET POWERPAK 1
Input Capacitance (Ciss) (Max) @ Vds: 3504 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK®10 x 12
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 236W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
| SI2308BDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.3A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 60-V (D-S) MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.09W (Ta), 1.66W (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 1.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.3A (Tc)
FET Type: N-Channel
| SIHLU024-GE3 |
|
Hersteller: Vishay Siliconix
Description: LOGIC MOSFET N-CHANNEL 60V
Part Status: Active
Supplier Device Package: TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: LOGIC MOSFET N-CHANNEL 60V
Part Status: Active
Supplier Device Package: TO-251AA
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 5V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
| IRFR9210PBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 200V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 200V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
FET Type: P-Channel
| SIDR638DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 40-V (D-S) MOSFET
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mhm @ 20A, 10V
| SIHP12N50E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 500V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 500 V
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| SIHF9Z24STRR-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 60V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CHANNEL 60V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
| DG444DY |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16SOIC
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 140ns
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16SOIC
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 140ns
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-SOIC
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Number of Circuits: 4
Part Status: Obsolete
| DG444DJ |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 140ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-PDIP
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16DIP
On-State Resistance (Max): 85Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Switch Time (Ton, Toff) (Max): 250ns, 140ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -100dB @ 1MHz
Charge Injection: -1pC
Voltage - Supply, Dual (V±): ±5V ~ 20V
Voltage - Supply, Single (V+): 5V ~ 36V
Supplier Device Package: 16-PDIP
auf Bestellung 396 Stücke - Preis und Lieferfrist anzeigen
| DG444BDJ |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16DIP
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 12V
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
On-State Resistance (Max): 80Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SWITCH QUAD SPST 16DIP
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Crosstalk: -95dB @ 100kHz
Charge Injection: 1pC
Voltage - Supply, Dual (V±): ±15V
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 12V
Number of Circuits: 4
Part Status: Obsolete
Current - Leakage (IS(off)) (Max): 500pA
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
On-State Resistance (Max): 80Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
| SIHA6N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
auf Bestellung 1000 Stücke Description: N-CHANNEL 650V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| SIHA6N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke Description: N-CHANNEL 650V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
|
| SIHP15N60E-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke - Preis und Lieferfrist anzeigen
| SIHA15N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
| SIDR402DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 40-V (D-S) MOSFET
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| SQD40061EL-T4_GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 40-V (D-S) 175C MOSFET
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| SQ2389ES-T1_BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET P-CH 40V 4.1A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
| IRFR420PBF-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 500V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| SQ3410EV-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| SQ3410EV-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
auf Bestellung 3000 Stücke Description: N-CHANNEL 30-V (D-S) 175C MOSFET
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| SQ3469EV-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Power Dissipation (Max): 5W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: P-CHANNEL 20-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Power Dissipation (Max): 5W (Tc)
auf Bestellung 1080 Stücke - Preis und Lieferfrist anzeigen
| SQ3469EV-T1_BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
auf Bestellung 1080 Stücke Description: P-CHANNEL 20-V (D-S) 175C MOSFET
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 25µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Lieferzeit 21-28 Tag (e)
|
| SI3442BDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 2.5-V (G-S) MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 2.5-V (G-S) MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
auf Bestellung 2840 Stücke - Preis und Lieferfrist anzeigen
| SI3442BDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 2.5-V (G-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 2840 Stücke Description: N-CHANNEL 2.5-V (G-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
| SI3424CDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 2986 Stücke - Preis und Lieferfrist anzeigen
| SI3424CDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
auf Bestellung 2986 Stücke Description: N-CHANNEL 30-V (D-S) MOSFET
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 15 V
Lieferzeit 21-28 Tag (e)
|
| SI3460BDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 398 Stücke - Preis und Lieferfrist anzeigen
| SI3460BDV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 398 Stücke Description: N-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta), 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
| SI3464DV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
auf Bestellung 3000 Stücke Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| SI3464DV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
auf Bestellung 3000 Stücke Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 10 V
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
|
| SQJ850EP-T2_GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
| SIDR570EP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 150 V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta), 90.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| SIDR392DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30-V (D-S) MOSFET
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 0.62mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +20V, -16V
| SIDR140DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25-V (D-S) MOSFET
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 25-V (D-S) MOSFET
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
| SIDR610DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 200-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 200-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 39.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
| SIDR510EP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100 V (D-S) 175C MOSFE
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 148A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4980 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
| SIDR622DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 150-V (D-S) MOSFET
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
| SIDR626DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 60-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 42.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| SIDR870ADP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100-V (D-S) MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2866 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.8A (Ta), 95A (Tc)
FET Type: N-Channel
| SIDR668DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 100-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| SIDR500EP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) 175C MOSFET
Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 30 V (D-S) 175C MOSFET
Current - Continuous Drain (Id) @ 25°C: 94A (Ta), 421A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
| SIDR220DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 25-V (D-S) MOSFET
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 25-V (D-S) MOSFET
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 87.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
| SIDR680DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80-V (D-S) MOSFET
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: N-CHANNEL 80-V (D-S) MOSFET
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8DC
Vgs(th) (Max) @ Id: 3.4V @ 250µA
| DG1411EEQ-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: IC ANLG SWITCH QUAD SPST 16TSSOP
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC ANLG SWITCH QUAD SPST 16TSSOP
Packaging: Tape & Reel (TR)
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 1.8Ohm
-3db Bandwidth: 210MHz
Voltage - Supply, Single (V+): 4.5V ~ 24V
Voltage - Supply, Dual (V±): ±4.5V ~ 15V
Charge Injection: -20pC
Crosstalk: -100dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 80mOhm
Switch Time (Ton, Toff) (Max): 150ns, 120ns
Channel Capacitance (CS(off), CD(off)): 11pF, 24pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
| SIZ240DT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET DUAL N-CH 40V POWERPAIR 3
FET Type: 2 N-Channel (Dual)
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
Drain to Source Voltage (Vdss): 40V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET DUAL N-CH 40V POWERPAIR 3
FET Type: 2 N-Channel (Dual)
Power - Max: 4.3W (Ta), 33W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PowerPair® (3.3x3.3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 22nC @ 10V
Rds On (Max) @ Id, Vgs: 8.05mOhm @ 10A, 10V, 8.41mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 20V, 1070pF @ 20V
Drain to Source Voltage (Vdss): 40V
| SIHD5N80AE-GE3 |
|
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET DPAK (TO-2
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 3000 Stücke Description: E SERIES POWER MOSFET DPAK (TO-2
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Lieferzeit 21-28 Tag (e)
|
| SQM100N04-2M7_GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V
| SQJ951EP-T1_BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 30A PPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2P-CH 30V 30A PPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
auf Bestellung 273 Stücke - Preis und Lieferfrist anzeigen
| SQJ951EP-T1_BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 30A PPAK
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
auf Bestellung 273 Stücke Description: MOSFET 2P-CH 30V 30A PPAK
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Power - Max: 56W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Lieferzeit 21-28 Tag (e)
|
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