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SI4804CDY-T1-GE3 SI4804CDY-T1-GE3 si4804cd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SOIC
Base Part Number: SI4804
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8SOIC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4804
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
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SI6926ADQ-T1-E3 SI6926ADQ-T1-E3 72754.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6926
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
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Vishay Siliconix Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI6926
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
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SI4936BDY-T1-E3 SI4936BDY-T1-E3 si4936bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 6.9A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA917DJ-T1-GE3 SIA917DJ-T1-GE3 sia917dj.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3552DV-T1-GE3 SI3552DV-T1-GE3 si3552dv.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 6-TSOP
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Type: N and P-Channel
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
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Vishay Siliconix Description: MOSFET N/P-CH 30V 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
FET Type: N and P-Channel
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
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SI5515CDC-T1-GE3 SI5515CDC-T1-GE3 si5515cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Manufacturer: Vishay Siliconix
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI5515
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Vishay Siliconix Description: MOSFET N/P-CH 20V 4A 1206-8
Base Part Number: SI5515
Manufacturer: Vishay Siliconix
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SI3993DV-T1-E3 SI3993DV-T1-E3 72320.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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Vishay Siliconix Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
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SI4947ADY-T1-E3 SI4947ADY-T1-E3 71101.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 3A 8-SOIC
FET Type: 2 P-Channel (Dual)
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9926CDY-T1-GE3 SI9926CDY-T1-GE3 si9926cd.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7232DN-T1-GE3 SI7232DN-T1-GE3 si7232dn.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 25A PPAK 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
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SI4804BDY-T1-E3 SI4804BDY-T1-E3 si4804bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4804
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9934BDY-T1-GE3 SI9934BDY-T1-GE3 72525.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4228DY-T1-GE3 SI4228DY-T1-GE3 si4228dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
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Vishay Siliconix Description: MOSFET 2N-CH 25V 8A 8-SOIC
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
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SI3900DV-T1-E3 SI3900DV-T1-E3 71178.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
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Vishay Siliconix Description: MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
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SI4925DDY-T1-GE3 SI4925DDY-T1-GE3 si4925dd.pdf Vishay Siliconix Description: MOSFET 2P-CH 30V 8A 8-SOIC
Power - Max: 5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4388DY-T1-E3 SI4388DY-T1-E3 si4388dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
Base Part Number: SI4388
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4906DY-T1-E3 SI4906DY-T1-E3 73867.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 6.6A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA511DJ-T1-GE3 SIA511DJ-T1-GE3 sia511dj.pdf Vishay Siliconix Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA912DJ-T1-GE3 SIA912DJ-T1-GE3 sia912dj.pdf Vishay Siliconix Description: MOSFET 2N-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Base Part Number: SIA912
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA914DJ-T1-GE3 SIA914DJ-T1-GE3 sia914dj.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6913DQ-T1-GE3 SI6913DQ-T1-GE3 si6913dq.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 4.9A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6913
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2P-CH 12V 4.9A 8-TSSOP
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
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SI6544BDQ-T1-GE3 SI6544BDQ-T1-GE3 72244.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7904BDN-T1-GE3 SI7904BDN-T1-GE3 si7904bd.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Power - Max: 17.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7904
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Power - Max: 17.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
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SI3586DV-T1-E3 SI3586DV-T1-E3 si3586dv.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 2.9A 6TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5504BDC-T1-GE3 SI5504BDC-T1-GE3 Vishay Siliconix Description: MOSFET N/P-CH 30V 4A 1206-8
Manufacturer: Vishay Siliconix
Base Part Number: SI5504
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6562CDQ-T1-GE3 SI6562CDQ-T1-GE3 si6562cd.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 6.7A 8-TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 1.6W, 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4916DY-T1-E3 SI4916DY-T1-E3 si4916dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 10A 8-SOIC
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
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Vishay Siliconix Description: MOSFET 2N-CH 30V 10A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
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Vishay Siliconix Description: MOSFET 2N-CH 30V 10A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
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SI4650DY-T1-E3 SI4650DY-T1-E3 si4650dy.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 8A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6968BEDQ-T1-GE3 SI6968BEDQ-T1-GE3 si6968be.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 5.2A 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Base Part Number: SI6968
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
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Vishay Siliconix Description: MOSFET 2N-CH 20V 5.2A 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI6968
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
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SI4567DY-T1-E3 SI4567DY-T1-E3 73426.pdf Vishay Siliconix Description: MOSFET N/P-CH 40V 5A 8-SOIC
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.75W, 2.95W
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5515DC-T1-E3 SI5515DC-T1-E3 72221.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 4.4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5904DC-T1-E3 SI5904DC-T1-E3 71065.pdf Vishay Siliconix Description: MOSFET 2N-CH 20V 3.1A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4946BEY-T1-GE3 SI4946BEY-T1-GE3 si4946be.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 6.5A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4946BEY-T1-E3 SI4946BEY-T1-E3 si4946be.pdf Vishay Siliconix Description: MOSFET 2N-CH 60V 6.5A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4910DY-T1-GE3 SI4910DY-T1-GE3 73699.pdf Vishay Siliconix Description: MOSFET 2N-CH 40V 7.6A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5513DC-T1-E3 SI5513DC-T1-E3 71186.pdf Vishay Siliconix Description: MOSFET N/P-CH 20V 3.1A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI1917EDH-T1-E3 SI1917EDH-T1-E3 71414.pdf Vishay Siliconix Description: MOSFET 2P-CH 12V 1A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Rds On (Max) @ Id, Vgs: 370 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5902DC-T1-E3 SI5902DC-T1-E3 si5902dc.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V 2.9A 1206-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7501DN-T1-E3 SI7501DN-T1-E3 72173.pdf Vishay Siliconix Description: MOSFET N/P-CH 30V 5.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
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Lieferzeit 21-28 Tag (e)
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SI4963BDY-T1-E3 SI4963BDY-T1-E3 72753.pdf Vishay Siliconix Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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Vishay Siliconix Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
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Lieferzeit 21-28 Tag (e)
auf Bestellung 117249 Stücke - Preis und Lieferfrist anzeigen
7+ 3.9 EUR
10+ 3.49 EUR
100+ 2.72 EUR
500+ 2.25 EUR
1000+ 1.77 EUR
SI4804CDY-T1-GE3 si4804cd.pdf
SI4804CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Base Part Number: SI4804
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4804CDY-T1-GE3 si4804cd.pdf
SI4804CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8SOIC
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI4804
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 865pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
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SI6926ADQ-T1-E3 72754.pdf
SI6926ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6926
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
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SI6926ADQ-T1-E3 72754.pdf
SI6926ADQ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.1A 8TSSOP
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI6926
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
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SI4936BDY-T1-E3 si4936bd.pdf
SI4936BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.9A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Dual)
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA917DJ-T1-GE3 sia917dj.pdf
SIA917DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI3552DV-T1-GE3 si3552dv.pdf
SI3552DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6-TSOP
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Type: N and P-Channel
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3552DV-T1-GE3 si3552dv.pdf
SI3552DV-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6-TSOP
Current - Continuous Drain (Id) @ 25°C: 2.5A
Drain to Source Voltage (Vdss): 30V
FET Type: N and P-Channel
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.5A, 10V
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SI5515CDC-T1-GE3 si5515cd.pdf
SI5515CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Manufacturer: Vishay Siliconix
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI5515
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SI5515CDC-T1-GE3 si5515cd.pdf
SI5515CDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4A 1206-8
Base Part Number: SI5515
Manufacturer: Vishay Siliconix
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 36mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
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SI3993DV-T1-E3 72320.pdf
SI3993DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI3993DV-T1-E3 72320.pdf
SI3993DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
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SI3993DV-T1-E3 72320.pdf
SI3993DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 1.8A 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 133 mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
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SI4947ADY-T1-E3 71101.pdf
SI4947ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 3A 8-SOIC
FET Type: 2 P-Channel (Dual)
Power - Max: 1.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9926CDY-T1-GE3 si9926cd.pdf
SI9926CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7232DN-T1-GE3 si7232dn.pdf
SI7232DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 25A PPAK 1212-8
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 8V
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 10A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 N-Channel (Dual)
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4804BDY-T1-E3 si4804bd.pdf
SI4804BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.7A 8-SOIC
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: SI4804
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI9934BDY-T1-GE3 72525.pdf
SI9934BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Drain to Source Voltage (Vdss): 12V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI4228DY-T1-GE3 si4228dy.pdf
SI4228DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
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SI4228DY-T1-GE3 si4228dy.pdf
SI4228DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
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SI4228DY-T1-GE3 si4228dy.pdf
SI4228DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 12.5V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 25V
FET Feature: Logic Level Gate
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SI3900DV-T1-E3 71178.pdf
SI3900DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
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Lieferzeit 21-28 Tag (e)
auf Bestellung 2853178 Stücke - Preis und Lieferfrist anzeigen
SI3900DV-T1-E3 71178.pdf
SI3900DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 2A 6-TSOP
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
Base Part Number: SI3900
auf Bestellung 6392 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2852786 Stücke - Preis und Lieferfrist anzeigen
SI4925DDY-T1-GE3 si4925dd.pdf
SI4925DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 8A 8-SOIC
Power - Max: 5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 P-Channel (Dual)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4388DY-T1-E3 si4388dy.pdf
SI4388DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10.7A 8-SOIC
Base Part Number: SI4388
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 600 Stücke - Preis und Lieferfrist anzeigen
SI4906DY-T1-E3 73867.pdf
SI4906DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 6.6A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA511DJ-T1-GE3 sia511dj.pdf
SIA511DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SIA912DJ-T1-GE3 sia912dj.pdf
SIA912DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A SC70-6
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual
Base Part Number: SIA912
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SIA914DJ-T1-GE3 sia914dj.pdf
SIA914DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 6.5W
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: PowerPAK® SC-70-6 Dual
Package / Case: PowerPAK® SC-70-6 Dual
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI6913DQ-T1-GE3 si6913dq.pdf
SI6913DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
Base Part Number: SI6913
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6913DQ-T1-GE3 si6913dq.pdf
SI6913DQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.9A 8-TSSOP
Base Part Number: SI6913
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Rds On (Max) @ Id, Vgs: 21mOhm @ 5.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
auf Bestellung 1524 Stücke
Lieferzeit 21-28 Tag (e)
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SI6544BDQ-T1-GE3 72244.pdf
SI6544BDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A 8-TSSOP
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7904BDN-T1-GE3 si7904bd.pdf
SI7904BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Power - Max: 17.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Base Part Number: SI7904
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7904BDN-T1-GE3 si7904bd.pdf
SI7904BDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
Power - Max: 17.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 2716 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3000 Stücke - Preis und Lieferfrist anzeigen
SI3586DV-T1-E3 si3586dv.pdf
SI3586DV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 2.9A 6TSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW
Supplier Device Package: 6-TSOP
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Package / Case: SOT-23-6 Thin, TSOT-23-6
FET Type: N and P-Channel
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 50 Stücke - Preis und Lieferfrist anzeigen
SI5504BDC-T1-GE3
SI5504BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4A 1206-8
Manufacturer: Vishay Siliconix
Base Part Number: SI5504
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.12W, 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.7A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6562CDQ-T1-GE3 si6562cd.pdf
SI6562CDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 6.7A 8-TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Rds On (Max) @ Id, Vgs: 22mOhm @ 5.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Drain to Source Voltage (Vdss): 20V
FET Type: N and P-Channel
Power - Max: 1.6W, 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4916DY-T1-E3 si4916dy.pdf
SI4916DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8-SOIC
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
auf Bestellung 2500 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 161963 Stücke - Preis und Lieferfrist anzeigen
SI4916DY-T1-E3 si4916dy.pdf
SI4916DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8-SOIC
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
auf Bestellung 4669 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 159794 Stücke - Preis und Lieferfrist anzeigen
SI4916DY-T1-E3 si4916dy.pdf
SI4916DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 10A 8-SOIC
Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.3W, 3.5W
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
auf Bestellung 4669 Stücke
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SI4650DY-T1-E3 si4650dy.pdf
SI4650DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Type: 2 N-Channel (Half Bridge)
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI6968BEDQ-T1-GE3 si6968be.pdf
SI6968BEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Base Part Number: SI6968
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
auf Bestellung 48000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 68321 Stücke - Preis und Lieferfrist anzeigen
SI6968BEDQ-T1-GE3 si6968be.pdf
SI6968BEDQ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual) Common Drain
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI6968
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
auf Bestellung 50921 Stücke
Lieferzeit 21-28 Tag (e)
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SI4567DY-T1-E3 73426.pdf
SI4567DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 5A 8-SOIC
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A
Drain to Source Voltage (Vdss): 40V
FET Type: N and P-Channel
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.75W, 2.95W
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI5515DC-T1-E3 72221.pdf
SI5515DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.4A 1206-8
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 200000 Stücke - Preis und Lieferfrist anzeigen
SI5904DC-T1-E3 71065.pdf
SI5904DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.1A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4946BEY-T1-GE3 si4946be.pdf
SI4946BEY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.5A 8-SOIC
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4946BEY-T1-E3 si4946be.pdf
SI4946BEY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.5A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Drain to Source Voltage (Vdss): 60V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Rds On (Max) @ Id, Vgs: 41mOhm @ 5.3A, 10V
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SI4910DY-T1-GE3 73699.pdf
SI4910DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.6A 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Drain to Source Voltage (Vdss): 40V
FET Type: 2 N-Channel (Dual)
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI5513DC-T1-E3 71186.pdf
SI5513DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 3.1A 1206-8
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.1A, 2.1A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
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SI1917EDH-T1-E3 71414.pdf
SI1917EDH-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1A SC70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 570mW
Rds On (Max) @ Id, Vgs: 370 mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A
Drain to Source Voltage (Vdss): 12V
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Type: 2 P-Channel (Dual)
Vgs(th) (Max) @ Id: 450mV @ 100µA (Min)
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SI5902DC-T1-E3 si5902dc.pdf
SI5902DC-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 2.9A 1206-8
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Supplier Device Package: 1206-8 ChipFET™
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Drain to Source Voltage (Vdss): 30V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI7501DN-T1-E3 72173.pdf
SI7501DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: N and P-Channel, Common Drain
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Lieferzeit 21-28 Tag (e)
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SI4963BDY-T1-E3 72753.pdf
SI4963BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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SI4963BDY-T1-E3 72753.pdf
SI4963BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 20V
FET Type: 2 P-Channel (Dual)
Power - Max: 1.1W
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Lieferzeit 21-28 Tag (e)
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7+ 3.9 EUR
10+ 3.49 EUR
100+ 2.72 EUR
500+ 2.25 EUR
1000+ 1.77 EUR
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