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SI7384DP-T1-E3 SI7384DP-T1-E3 Vishay Siliconix 72656.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7386DP-T1-E3 SI7386DP-T1-E3 Vishay Siliconix 73108.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.13 EUR
10+ 3.69 EUR
Mindestbestellmenge: 7
SI7403BDN-T1-E3 SI7403BDN-T1-E3 Vishay Siliconix 73333.pdf Description: MOSFET P-CH 20V 8A PPAK1212-8
Produkt ist nicht verfügbar
SI7409ADN-T1-E3 SI7409ADN-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Produkt ist nicht verfügbar
SI7411DN-T1-E3 SI7411DN-T1-E3 Vishay Siliconix 72399.pdf Description: MOSFET P-CH 20V 7.5A 1212-8
Produkt ist nicht verfügbar
SI7413DN-T1-E3 SI7413DN-T1-E3 Vishay Siliconix 72616.pdf Description: MOSFET P-CH 20V 8.4A 1212-8
Produkt ist nicht verfügbar
SI7414DN-T1-E3 SI7414DN-T1-E3 Vishay Siliconix 71738.pdf Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
Mindestbestellmenge: 8
SI7415DN-T1-E3 SI7415DN-T1-E3 Vishay Siliconix si7415dn.pdf Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 98236 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.69 EUR
10+ 3.07 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.75 EUR
Mindestbestellmenge: 8
SI7421DN-T1-E3 SI7421DN-T1-E3 Vishay Siliconix 72416.pdf Description: MOSFET P-CH 30V 6.4A 1212-8
auf Bestellung 8935 Stücke:
Lieferzeit 21-28 Tag (e)
SI7423DN-T1-E3 SI7423DN-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 7.4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
auf Bestellung 6757 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.67 EUR
10+ 3.01 EUR
100+ 2.34 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 8
SI7430DP-T1-E3 SI7430DP-T1-E3 Vishay Siliconix si7430dp.pdf Description: MOSFET N-CH 150V 26A PPAK SO-8
Produkt ist nicht verfügbar
SI7431DP-T1-E3 SI7431DP-T1-E3 Vishay Siliconix si7431dp.pdf Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 4037 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.44 EUR
10+ 7.93 EUR
100+ 6.42 EUR
500+ 5.7 EUR
1000+ 4.88 EUR
Mindestbestellmenge: 3
SI7439DP-T1-E3 SI7439DP-T1-E3 Vishay Siliconix si7439dp.pdf Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 8955 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.1 EUR
10+ 7.64 EUR
100+ 6.18 EUR
500+ 5.5 EUR
1000+ 4.71 EUR
Mindestbestellmenge: 3
Si7448DP-T1-E3 Si7448DP-T1-E3 Vishay Siliconix si7448dp.pdf Description: MOSFET N-CH 20V 13.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7450DP-T1-E3 SI7450DP-T1-E3 Vishay Siliconix si7450dp.pdf Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 4953 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.71 EUR
10+ 5.56 EUR
100+ 4.42 EUR
500+ 3.74 EUR
1000+ 3.17 EUR
Mindestbestellmenge: 4
SI7454DP-T1-E3 SI7454DP-T1-E3 Vishay Siliconix 71618.pdf Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 21887 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.55 EUR
10+ 3.8 EUR
100+ 3.02 EUR
500+ 2.56 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 6
SI7456DP-T1-E3 SI7456DP-T1-E3 Vishay Siliconix si7456dp.pdf Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.86 EUR
10+ 4.03 EUR
100+ 3.2 EUR
500+ 2.71 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 6
SI7459DP-T1-E3 SI7459DP-T1-E3 Vishay Siliconix si7459dp.pdf Description: MOSFET P-CH 30V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7461DP-T1-E3 SI7461DP-T1-E3 Vishay Siliconix si7461dp.pdf Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
auf Bestellung 19797 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.49 EUR
10+ 4.56 EUR
100+ 3.63 EUR
500+ 3.07 EUR
1000+ 2.61 EUR
Mindestbestellmenge: 5
SI7462DP-T1-E3 SI7462DP-T1-E3 Vishay Siliconix si7462dp.pdf Description: MOSFET N-CH 200V 2.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7463DP-T1-E3 SI7463DP-T1-E3 Vishay Siliconix si7463dp.pdf Description: MOSFET P-CH 40V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Produkt ist nicht verfügbar
SI7464DP-T1-E3 SI7464DP-T1-E3 Vishay Siliconix si7464dp.pdf Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2790 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.37 EUR
10+ 3.62 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
Mindestbestellmenge: 6
SI7465DP-T1-E3 SI7465DP-T1-E3 Vishay Siliconix 73113.pdf Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 22909 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SI7469DP-T1-E3 SI7469DP-T1-E3 Vishay Siliconix si7469dp.pdf Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 2534 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.14 EUR
10+ 5.11 EUR
100+ 4.07 EUR
500+ 3.44 EUR
1000+ 2.92 EUR
Mindestbestellmenge: 5
SI7476DP-T1-E3 SI7476DP-T1-E3 Vishay Siliconix si7476dp.pdf Description: MOSFET N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7478DP-T1-E3 SI7478DP-T1-E3 Vishay Siliconix si7478dp.pdf Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 11771 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.76 EUR
10+ 6.07 EUR
100+ 4.88 EUR
500+ 4.01 EUR
1000+ 3.32 EUR
Mindestbestellmenge: 4
SI7483ADP-T1-E3 SI7483ADP-T1-E3 Vishay Siliconix 73025.pdf Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Produkt ist nicht verfügbar
SI7485DP-T1-E3 SI7485DP-T1-E3 Vishay Siliconix 72275.pdf Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7489DP-T1-E3 SI7489DP-T1-E3 Vishay Siliconix si7489dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 15567 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.66 EUR
10+ 5.99 EUR
100+ 4.81 EUR
500+ 3.95 EUR
1000+ 3.27 EUR
Mindestbestellmenge: 4
SI7491DP-T1-E3 SI7491DP-T1-E3 Vishay Siliconix 72276.pdf Description: MOSFET P-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7501DN-T1-E3 SI7501DN-T1-E3 Vishay Siliconix 72173.pdf Description: MOSFET N/P-CH 30V 5.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
SI7530DP-T1-E3 SI7530DP-T1-E3 Vishay Siliconix 73249.pdf Description: MOSFET N/P-CH 60V 3A PPAK SO-8
Produkt ist nicht verfügbar
SI7540DP-T1-E3 SI7540DP-T1-E3 Vishay Siliconix si7540dp.pdf Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7636DP-T1-E3 SI7636DP-T1-E3 Vishay Siliconix si7636dp.pdf Description: MOSFET N-CH 30V 17A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Produkt ist nicht verfügbar
SI7686DP-T1-E3 SI7686DP-T1-E3 Vishay Siliconix si7686dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
auf Bestellung 2984 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.83 EUR
12+ 2.32 EUR
100+ 1.8 EUR
500+ 1.53 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 10
SI7703EDN-T1-E3 SI7703EDN-T1-E3 Vishay Siliconix si7703edn.pdf Description: MOSFET P-CH 20V 4.3A 1212-8
Produkt ist nicht verfügbar
SI7802DN-T1-E3 SI7802DN-T1-E3 Vishay Siliconix si7802dn.pdf Description: MOSFET N-CH 250V 1.24A 1212-8
Produkt ist nicht verfügbar
SI7804DN-T1-E3 SI7804DN-T1-E3 Vishay Siliconix 72317.pdf Description: MOSFET N-CH 30V 6.5A PPAK1212-8
auf Bestellung 2727 Stücke:
Lieferzeit 21-28 Tag (e)
SI7806ADN-T1-E3 SI7806ADN-T1-E3 Vishay Siliconix 72995.pdf Description: MOSFET N-CH 30V 9A PPAK1212-8
auf Bestellung 2352 Stücke:
Lieferzeit 21-28 Tag (e)
SI7810DN-T1-E3 SI7810DN-T1-E3 Vishay Siliconix 70689.pdf Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
auf Bestellung 8948 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.46 EUR
10+ 2.82 EUR
100+ 2.19 EUR
500+ 1.86 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
SI7812DN-T1-E3 SI7812DN-T1-E3 Vishay Siliconix si7812dn.pdf Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 5668 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.81 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
SI7818DN-T1-E3 SI7818DN-T1-E3 Vishay Siliconix si7818dn.pdf Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 3567 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.82 EUR
10+ 3.14 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 7
SI7820DN-T1-E3 SI7820DN-T1-E3 Vishay Siliconix 72581.pdf Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.03 EUR
10+ 3.62 EUR
100+ 2.91 EUR
500+ 2.39 EUR
1000+ 1.98 EUR
Mindestbestellmenge: 7
SI7842DP-T1-E3 SI7842DP-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
Si7844DP-T1-E3 Si7844DP-T1-E3 Vishay Siliconix 71328.pdf Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7846DP-T1-E3 SI7846DP-T1-E3 Vishay Siliconix Description: MOSFET N-CH 150V 4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
auf Bestellung 19434 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.59 EUR
10+ 4.65 EUR
100+ 3.7 EUR
500+ 3.13 EUR
1000+ 2.66 EUR
Mindestbestellmenge: 5
SI7848DP-T1-E3 SI7848DP-T1-E3 Vishay Siliconix si7848dp.pdf Description: MOSFET N-CH 40V 10.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7850DP-T1-E3 SI7850DP-T1-E3 Vishay Siliconix 71625.pdf Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
auf Bestellung 11532 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.6 EUR
10+ 3.84 EUR
100+ 3.05 EUR
500+ 2.58 EUR
1000+ 2.19 EUR
Mindestbestellmenge: 6
SI7852DP-T1-E3 SI7852DP-T1-E3 Vishay Siliconix si7852dp.pdf Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
auf Bestellung 12937 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.8 EUR
10+ 4.8 EUR
100+ 3.82 EUR
500+ 3.23 EUR
1000+ 2.74 EUR
Mindestbestellmenge: 5
SI7858ADP-T1-E3 SI7858ADP-T1-E3 Vishay Siliconix si7858ad.pdf Description: MOSFET N-CH 12V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 6 V
auf Bestellung 5150 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.29 EUR
10+ 5.22 EUR
100+ 4.15 EUR
500+ 3.51 EUR
1000+ 2.98 EUR
Mindestbestellmenge: 5
SI7866ADP-T1-E3 SI7866ADP-T1-E3 Vishay Siliconix 73380.pdf Description: MOSFET N-CH 20V 40A PPAK SO-8
auf Bestellung 8498 Stücke:
Lieferzeit 21-28 Tag (e)
SI7892BDP-T1-E3 SI7892BDP-T1-E3 Vishay Siliconix si7892bd.pdf Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 8905 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.39 EUR
10+ 3.65 EUR
100+ 2.9 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 6
SI7898DP-T1-E3 SI7898DP-T1-E3 Vishay Siliconix si7898dp.pdf Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 16199 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.24 EUR
10+ 3.5 EUR
100+ 2.79 EUR
500+ 2.36 EUR
1000+ 2 EUR
Mindestbestellmenge: 7
SI7900AEDN-T1-E3 SI7900AEDN-T1-E3 Vishay Siliconix si7900aedn.pdf Description: MOSFET 2N-CH 20V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 4760 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.93 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.11 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
SI7904BDN-T1-E3 SI7904BDN-T1-E3 Vishay Siliconix si7904bd.pdf Description: MOSFET 2N-CH 20V 6A 1212-8
auf Bestellung 402 Stücke:
Lieferzeit 21-28 Tag (e)
SI7911DN-T1-E3 SI7911DN-T1-E3 Vishay Siliconix 72340.pdf Description: MOSFET 2P-CH 20V 4.2A 1212-8
Produkt ist nicht verfügbar
SI7913DN-T1-E3 SI7913DN-T1-E3 Vishay Siliconix 72615.pdf Description: MOSFET 2P-CH 20V 5A 1212-8
auf Bestellung 771 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.08 EUR
10+ 3.68 EUR
100+ 2.96 EUR
500+ 2.43 EUR
Mindestbestellmenge: 7
SI7922DN-T1-E3 SI7922DN-T1-E3 Vishay Siliconix 72031.pdf Description: MOSFET 2N-CH 100V 1.8A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 2985 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.6 EUR
10+ 4.12 EUR
100+ 3.31 EUR
500+ 2.72 EUR
1000+ 2.26 EUR
Mindestbestellmenge: 6
SI7923DN-T1-E3 SI7923DN-T1-E3 Vishay Siliconix 72622.pdf Description: MOSFET 2P-CH 30V 4.3A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 1251 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.95 EUR
10+ 3.55 EUR
100+ 2.85 EUR
500+ 2.34 EUR
1000+ 1.94 EUR
Mindestbestellmenge: 7
SI7942DP-T1-E3 SI7942DP-T1-E3 Vishay Siliconix 72118.pdf Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2571 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.57 EUR
10+ 6.8 EUR
100+ 5.57 EUR
500+ 4.75 EUR
1000+ 4 EUR
Mindestbestellmenge: 4
SI7384DP-T1-E3 72656.pdf
SI7384DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7386DP-T1-E3 73108.pdf
SI7386DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.13 EUR
10+ 3.69 EUR
Mindestbestellmenge: 7
SI7403BDN-T1-E3 73333.pdf
SI7403BDN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8A PPAK1212-8
Produkt ist nicht verfügbar
SI7409ADN-T1-E3
SI7409ADN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Produkt ist nicht verfügbar
SI7411DN-T1-E3 72399.pdf
SI7411DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
Produkt ist nicht verfügbar
SI7413DN-T1-E3 72616.pdf
SI7413DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 8.4A 1212-8
Produkt ist nicht verfügbar
SI7414DN-T1-E3 71738.pdf
SI7414DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
Mindestbestellmenge: 8
SI7415DN-T1-E3 si7415dn.pdf
SI7415DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 98236 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.69 EUR
10+ 3.07 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.75 EUR
Mindestbestellmenge: 8
SI7421DN-T1-E3 72416.pdf
SI7421DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.4A 1212-8
auf Bestellung 8935 Stücke:
Lieferzeit 21-28 Tag (e)
SI7423DN-T1-E3
SI7423DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 11.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
auf Bestellung 6757 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.67 EUR
10+ 3.01 EUR
100+ 2.34 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
Mindestbestellmenge: 8
SI7430DP-T1-E3 si7430dp.pdf
SI7430DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 26A PPAK SO-8
Produkt ist nicht verfügbar
SI7431DP-T1-E3 si7431dp.pdf
SI7431DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 4037 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.44 EUR
10+ 7.93 EUR
100+ 6.42 EUR
500+ 5.7 EUR
1000+ 4.88 EUR
Mindestbestellmenge: 3
SI7439DP-T1-E3 si7439dp.pdf
SI7439DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 5.2A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 8955 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.1 EUR
10+ 7.64 EUR
100+ 6.18 EUR
500+ 5.5 EUR
1000+ 4.71 EUR
Mindestbestellmenge: 3
Si7448DP-T1-E3 si7448dp.pdf
Si7448DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7450DP-T1-E3 si7450dp.pdf
SI7450DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 4953 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.71 EUR
10+ 5.56 EUR
100+ 4.42 EUR
500+ 3.74 EUR
1000+ 3.17 EUR
Mindestbestellmenge: 4
SI7454DP-T1-E3 71618.pdf
SI7454DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 21887 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.55 EUR
10+ 3.8 EUR
100+ 3.02 EUR
500+ 2.56 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 6
SI7456DP-T1-E3 si7456dp.pdf
SI7456DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.7A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.86 EUR
10+ 4.03 EUR
100+ 3.2 EUR
500+ 2.71 EUR
1000+ 2.3 EUR
Mindestbestellmenge: 6
SI7459DP-T1-E3 si7459dp.pdf
SI7459DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7461DP-T1-E3 si7461dp.pdf
SI7461DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 14.4A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
auf Bestellung 19797 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.49 EUR
10+ 4.56 EUR
100+ 3.63 EUR
500+ 3.07 EUR
1000+ 2.61 EUR
Mindestbestellmenge: 5
SI7462DP-T1-E3 si7462dp.pdf
SI7462DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7463DP-T1-E3 si7463dp.pdf
SI7463DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 11A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 18.6A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Produkt ist nicht verfügbar
SI7464DP-T1-E3 si7464dp.pdf
SI7464DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 2790 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.37 EUR
10+ 3.62 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
Mindestbestellmenge: 6
SI7465DP-T1-E3 73113.pdf
SI7465DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 3.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 22909 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.04 EUR
11+ 2.49 EUR
100+ 1.94 EUR
500+ 1.64 EUR
1000+ 1.34 EUR
Mindestbestellmenge: 9
SI7469DP-T1-E3 si7469dp.pdf
SI7469DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.2A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 40 V
auf Bestellung 2534 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.14 EUR
10+ 5.11 EUR
100+ 4.07 EUR
500+ 3.44 EUR
1000+ 2.92 EUR
Mindestbestellmenge: 5
SI7476DP-T1-E3 si7476dp.pdf
SI7476DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7478DP-T1-E3 si7478dp.pdf
SI7478DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 11771 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.76 EUR
10+ 6.07 EUR
100+ 4.88 EUR
500+ 4.01 EUR
1000+ 3.32 EUR
Mindestbestellmenge: 4
SI7483ADP-T1-E3 73025.pdf
SI7483ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 14A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 24A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Produkt ist nicht verfügbar
SI7485DP-T1-E3 72275.pdf
SI7485DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7489DP-T1-E3 si7489dp.pdf
SI7489DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 7.8A, 10V
Power Dissipation (Max): 5.2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 15567 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.66 EUR
10+ 5.99 EUR
100+ 4.81 EUR
500+ 3.95 EUR
1000+ 3.27 EUR
Mindestbestellmenge: 4
SI7491DP-T1-E3 72276.pdf
SI7491DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7501DN-T1-E3 72173.pdf
SI7501DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 5.4A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Produkt ist nicht verfügbar
SI7530DP-T1-E3 73249.pdf
SI7530DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 3A PPAK SO-8
Produkt ist nicht verfügbar
SI7540DP-T1-E3 si7540dp.pdf
SI7540DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7636DP-T1-E3 si7636dp.pdf
SI7636DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Produkt ist nicht verfügbar
SI7686DP-T1-E3 si7686dp.pdf
SI7686DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 5W (Ta), 37.9W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
auf Bestellung 2984 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.83 EUR
12+ 2.32 EUR
100+ 1.8 EUR
500+ 1.53 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 10
SI7703EDN-T1-E3 si7703edn.pdf
SI7703EDN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.3A 1212-8
Produkt ist nicht verfügbar
SI7802DN-T1-E3 si7802dn.pdf
SI7802DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
Produkt ist nicht verfügbar
SI7804DN-T1-E3 72317.pdf
SI7804DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A PPAK1212-8
auf Bestellung 2727 Stücke:
Lieferzeit 21-28 Tag (e)
SI7806ADN-T1-E3 72995.pdf
SI7806ADN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A PPAK1212-8
auf Bestellung 2352 Stücke:
Lieferzeit 21-28 Tag (e)
SI7810DN-T1-E3 70689.pdf
SI7810DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
auf Bestellung 8948 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.46 EUR
10+ 2.82 EUR
100+ 2.19 EUR
500+ 1.86 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
SI7812DN-T1-E3 si7812dn.pdf
SI7812DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 16A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 7.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 35 V
auf Bestellung 5668 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.81 EUR
10+ 3.98 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.27 EUR
Mindestbestellmenge: 6
SI7818DN-T1-E3 si7818dn.pdf
SI7818DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 3567 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.82 EUR
10+ 3.14 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.68 EUR
Mindestbestellmenge: 7
SI7820DN-T1-E3 72581.pdf
SI7820DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.03 EUR
10+ 3.62 EUR
100+ 2.91 EUR
500+ 2.39 EUR
1000+ 1.98 EUR
Mindestbestellmenge: 7
SI7842DP-T1-E3
SI7842DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
Si7844DP-T1-E3 71328.pdf
Si7844DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7846DP-T1-E3
SI7846DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
auf Bestellung 19434 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.59 EUR
10+ 4.65 EUR
100+ 3.7 EUR
500+ 3.13 EUR
1000+ 2.66 EUR
Mindestbestellmenge: 5
SI7848DP-T1-E3 si7848dp.pdf
SI7848DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 10.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7850DP-T1-E3 71625.pdf
SI7850DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10.3A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
auf Bestellung 11532 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
10+ 3.84 EUR
100+ 3.05 EUR
500+ 2.58 EUR
1000+ 2.19 EUR
Mindestbestellmenge: 6
SI7852DP-T1-E3 si7852dp.pdf
SI7852DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
auf Bestellung 12937 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.8 EUR
10+ 4.8 EUR
100+ 3.82 EUR
500+ 3.23 EUR
1000+ 2.74 EUR
Mindestbestellmenge: 5
SI7858ADP-T1-E3 si7858ad.pdf
SI7858ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 20A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 6 V
auf Bestellung 5150 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.29 EUR
10+ 5.22 EUR
100+ 4.15 EUR
500+ 3.51 EUR
1000+ 2.98 EUR
Mindestbestellmenge: 5
SI7866ADP-T1-E3 73380.pdf
SI7866ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
auf Bestellung 8498 Stücke:
Lieferzeit 21-28 Tag (e)
SI7892BDP-T1-E3 si7892bd.pdf
SI7892BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 8905 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.39 EUR
10+ 3.65 EUR
100+ 2.9 EUR
500+ 2.45 EUR
1000+ 2.08 EUR
Mindestbestellmenge: 6
SI7898DP-T1-E3 si7898dp.pdf
SI7898DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 16199 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.24 EUR
10+ 3.5 EUR
100+ 2.79 EUR
500+ 2.36 EUR
1000+ 2 EUR
Mindestbestellmenge: 7
SI7900AEDN-T1-E3 si7900aedn.pdf
SI7900AEDN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26mOhm @ 8.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
auf Bestellung 4760 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.11 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
SI7904BDN-T1-E3 si7904bd.pdf
SI7904BDN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6A 1212-8
auf Bestellung 402 Stücke:
Lieferzeit 21-28 Tag (e)
SI7911DN-T1-E3 72340.pdf
SI7911DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.2A 1212-8
Produkt ist nicht verfügbar
SI7913DN-T1-E3 72615.pdf
SI7913DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A 1212-8
auf Bestellung 771 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.08 EUR
10+ 3.68 EUR
100+ 2.96 EUR
500+ 2.43 EUR
Mindestbestellmenge: 7
SI7922DN-T1-E3 72031.pdf
SI7922DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 2985 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.6 EUR
10+ 4.12 EUR
100+ 3.31 EUR
500+ 2.72 EUR
1000+ 2.26 EUR
Mindestbestellmenge: 6
SI7923DN-T1-E3 72622.pdf
SI7923DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 4.3A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 47mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 1251 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.95 EUR
10+ 3.55 EUR
100+ 2.85 EUR
500+ 2.34 EUR
1000+ 1.94 EUR
Mindestbestellmenge: 7
SI7942DP-T1-E3 72118.pdf
SI7942DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 49mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Active
auf Bestellung 2571 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.57 EUR
10+ 6.8 EUR
100+ 5.57 EUR
500+ 4.75 EUR
1000+ 4 EUR
Mindestbestellmenge: 4
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