Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10949) > Seite 34 nach 183

Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 29 30 31 32 33 34 35 36 37 38 39 54 72 90 108 126 144 162 180 183  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SI7945DP-T1-E3 SI7945DP-T1-E3 Vishay Siliconix 72090.pdf Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Produkt ist nicht verfügbar
SI7946DP-T1-E3 SI7946DP-T1-E3 Vishay Siliconix 72282.pdf Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Produkt ist nicht verfügbar
SI7949DP-T1-E3 SI7949DP-T1-E3 Vishay Siliconix 73130.pdf Description: MOSFET 2P-CH 60V 3.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 6973 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.9 EUR
10+ 3.23 EUR
100+ 2.57 EUR
500+ 2.17 EUR
1000+ 1.84 EUR
Mindestbestellmenge: 7
SI7956DP-T1-E3 SI7956DP-T1-E3 Vishay Siliconix 72960.pdf Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
auf Bestellung 2773 Stücke:
Lieferzeit 21-28 Tag (e)
Si7958DP-T1-E3 Si7958DP-T1-E3 Vishay Siliconix si7958dp.pdf Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SI7960DP-T1-E3 SI7960DP-T1-E3 Vishay Siliconix si7960dp.pdf Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
SI7962DP-T1-E3 SI7962DP-T1-E3 Vishay Siliconix 72914.pdf Description: MOSFET 2N-CH 40V 7.1A PPAK SO-8
Produkt ist nicht verfügbar
SI7983DP-T1-E3 SI7983DP-T1-E3 Vishay Siliconix 72637.pdf Description: MOSFET 2P-CH 20V 7.7A PPAK SO-8
Produkt ist nicht verfügbar
SI8401DB-T1-E1 SI8401DB-T1-E1 Vishay Siliconix si8401db.pdf Description: MOSFET P-CH 20V 3.6A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Produkt ist nicht verfügbar
SI8402DB-T1-E1 SI8402DB-T1-E1 Vishay Siliconix 72657.pdf Description: MOSFET N-CH 20V 5.3A 4MICROFOOT
Produkt ist nicht verfügbar
SI8404DB-T1-E1 SI8404DB-T1-E1 Vishay Siliconix 73518.pdf Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Produkt ist nicht verfügbar
SI8405DB-T1-E1 SI8405DB-T1-E1 Vishay Siliconix 71814.pdf Description: MOSFET P-CH 12V 3.6A 4MICROFOOT
Produkt ist nicht verfügbar
SI8407DB-T2-E1 SI8407DB-T2-E1 Vishay Siliconix Si8407DB.pdf Description: MOSFET P-CH 20V 5.8A 6MICRO FOOT
Produkt ist nicht verfügbar
SI8409DB-T1-E1 SI8409DB-T1-E1 Vishay Siliconix si8409db.pdf Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
auf Bestellung 7976 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.57 EUR
13+ 2.1 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
SI8413DB-T1-E1 SI8413DB-T1-E1 Vishay Siliconix si8413db.pdf Description: MOSFET P-CH 20V 4.8A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Produkt ist nicht verfügbar
SI8415DB-T1-E1 SI8415DB-T1-E1 Vishay Siliconix 73210.pdf Description: MOSFET P-CH 12V 5.3A 2X2 4-MFP
Produkt ist nicht verfügbar
SI8424DB-T1-E1 SI8424DB-T1-E1 Vishay Siliconix si8424db.pdf Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V
Produkt ist nicht verfügbar
SI8429DB-T1-E1 SI8429DB-T1-E1 Vishay Siliconix si8429db.pdf Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
auf Bestellung 20174 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.37 EUR
14+ 1.94 EUR
100+ 1.51 EUR
500+ 1.28 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 11
SI8435DB-T1-E1 SI8435DB-T1-E1 Vishay Siliconix si8435db.pdf Description: MOSFET P-CH 20V 10A 2X2 4-MFP
Produkt ist nicht verfügbar
SI8901EDB-T2-E1 SI8901EDB-T2-E1 Vishay Siliconix 72941.pdf Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Produkt ist nicht verfügbar
SI8902EDB-T2-E1 SI8902EDB-T2-E1 Vishay Siliconix si8902edb.pdf Description: MOSFET 2N-CH 20V 3.9A 6-MFP
Produkt ist nicht verfügbar
SI8904EDB-T2-E1 SI8904EDB-T2-E1 Vishay Siliconix 72948.pdf Description: MOSFET 2N-CH 30V 3.8A 6-MFP
Produkt ist nicht verfügbar
SI9424BDY-T1-E3 SI9424BDY-T1-E3 Vishay Siliconix Si9424BDY.pdf Description: MOSFET P-CH 20V 5.6A 8-SOIC
Produkt ist nicht verfügbar
Si9433BDY-T1-E3 Si9433BDY-T1-E3 Vishay Siliconix si9433bd.pdf Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 11020 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.05 EUR
16+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
SI9434BDY-T1-E3 SI9434BDY-T1-E3 Vishay Siliconix Si9434BDY.pdf Description: MOSFET P-CH 20V 4.5A 8SO
Produkt ist nicht verfügbar
SI9435BDY-T1-E3 SI9435BDY-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
auf Bestellung 12824 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.05 EUR
16+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
SI9926BDY-T1-E3 SI9926BDY-T1-E3 Vishay Siliconix Description: MOSFET 2N-CH 20V 6.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI9933BDY-T1-E3 SI9933BDY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 20V 3.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI9934BDY-T1-E3 SI9934BDY-T1-E3 Vishay Siliconix Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SIA411DJ-T1-E3 SIA411DJ-T1-E3 Vishay Siliconix sia411dj.pdf Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA443DJ-T1-E3 SIA443DJ-T1-E3 Vishay Siliconix sia443dj.pdf Description: MOSFET P-CH 20V 9A SC70-6
Produkt ist nicht verfügbar
SIA450DJ-T1-E3 SIA450DJ-T1-E3 Vishay Siliconix sia450dj.pdf Description: MOSFET N-CH 240V 1.52A SC70-6
Produkt ist nicht verfügbar
SIA810DJ-T1-E3 SIA810DJ-T1-E3 Vishay Siliconix sia810dj.pdf Description: MOSFET N-CH 20V 4.5A SC-70-6
Produkt ist nicht verfügbar
SIA811DJ-T1-E3 SIA811DJ-T1-E3 Vishay Siliconix sia811dj.pdf Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SiA911DJ-T1-E3 SiA911DJ-T1-E3 Vishay Siliconix sia911dj.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-E3 SIA914DJ-T1-E3 Vishay Siliconix sia914dj.pdf Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB411DK-T1-E3 SIB411DK-T1-E3 Vishay Siliconix sib411dk.pdf Description: MOSFET P-CH 20V 9A SC75-6
Produkt ist nicht verfügbar
SIB412DK-T1-E3 SIB412DK-T1-E3 Vishay Siliconix sib412dk.pdf Description: MOSFET N-CH 20V 9A SC75-6
Produkt ist nicht verfügbar
SIB911DK-T1-E3 Vishay Siliconix sib911dk.pdf Description: MOSFET 2P-CH 20V 2.6A SC75-6
Produkt ist nicht verfügbar
SIE800DF-T1-E3 SIE800DF-T1-E3 Vishay Siliconix sie800df.pdf Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE802DF-T1-E3 SIE802DF-T1-E3 Vishay Siliconix 72985.pdf Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE806DF-T1-E3 SIE806DF-T1-E3 Vishay Siliconix sie806df.pdf Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE810DF-T1-E3 SIE810DF-T1-E3 Vishay Siliconix sie810df.pdf Description: MOSFET N-CH 20V 60A 10POLARPAK
Produkt ist nicht verfügbar
SIE812DF-T1-E3 SIE812DF-T1-E3 Vishay Siliconix sie812df.pdf Description: MOSFET N-CH 40V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE818DF-T1-E3 SIE818DF-T1-E3 Vishay Siliconix sie818df.pdf Description: MOSFET N-CH 75V 60A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V
Produkt ist nicht verfügbar
SIE820DF-T1-E3 SIE820DF-T1-E3 Vishay Siliconix sie820df.pdf Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE822DF-T1-E3 SIE822DF-T1-E3 Vishay Siliconix sie822df.pdf Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE830DF-T1-E3 SIE830DF-T1-E3 Vishay Siliconix sie830df.pdf Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE832DF-T1-E3 SIE832DF-T1-E3 Vishay Siliconix sie832df.pdf Description: MOSFET N-CH 40V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIF902EDZ-T1-E3 SIF902EDZ-T1-E3 Vishay Siliconix 72987.pdf Description: MOSFET 2N-CH 20V 7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar
SIF912EDZ-T1-E3 Vishay Siliconix 72952.pdf Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar
TN0200K-T1-E3 TN0200K-T1-E3 Vishay Siliconix tn0200k.pdf Description: MOSFET N-CH 20V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Produkt ist nicht verfügbar
TN0201K-T1-E3 TN0201K-T1-E3 Vishay Siliconix tn0201k.pdf Description: MOSFET N-CH 20V 420MA SOT23-3
Produkt ist nicht verfügbar
TN2404K-T1-E3 TN2404K-T1-E3 Vishay Siliconix tn2404k.pdf Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 6592 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
TP0101K-T1-E3 TP0101K-T1-E3 Vishay Siliconix 72692.pdf Description: MOSFET P-CH 20V 0.58A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Produkt ist nicht verfügbar
TP0202K-T1-E3 TP0202K-T1-E3 Vishay Siliconix 71609.pdf Description: MOSFET P-CH 30V 385MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Produkt ist nicht verfügbar
TP0610KL-TR1-E3 TP0610KL-TR1-E3 Vishay Siliconix 72712.pdf Description: MOSFET P-CH 60V 270MA TO226AA
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-226AA (TO-92)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 15 V
Produkt ist nicht verfügbar
TP0610K-T1-E3 TP0610K-T1-E3 Vishay Siliconix tp0610k.pdf Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
auf Bestellung 901503 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
30+ 0.88 EUR
100+ 0.53 EUR
500+ 0.49 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 24
SUM33N20-60P-E3 SUM33N20-60P-E3 Vishay Siliconix sum33n20.pdf Description: MOSFET N-CH 200V 33A D2PAK
Produkt ist nicht verfügbar
SI1013R-T1-E3 SI1013R-T1-E3 Vishay Siliconix 71167.pdf Description: MOSFET P-CH 20V 350MA SC-75A
Produkt ist nicht verfügbar
SI7945DP-T1-E3 72090.pdf
SI7945DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Produkt ist nicht verfügbar
SI7946DP-T1-E3 72282.pdf
SI7946DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.1A PPAK SO-8
Produkt ist nicht verfügbar
SI7949DP-T1-E3 73130.pdf
SI7949DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 3.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A
Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 6973 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
10+ 3.23 EUR
100+ 2.57 EUR
500+ 2.17 EUR
1000+ 1.84 EUR
Mindestbestellmenge: 7
SI7956DP-T1-E3 72960.pdf
SI7956DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 150V 2.6A PPAK SO-8
auf Bestellung 2773 Stücke:
Lieferzeit 21-28 Tag (e)
Si7958DP-T1-E3 si7958dp.pdf
Si7958DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SI7960DP-T1-E3 si7960dp.pdf
SI7960DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
SI7962DP-T1-E3 72914.pdf
SI7962DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.1A PPAK SO-8
Produkt ist nicht verfügbar
SI7983DP-T1-E3 72637.pdf
SI7983DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 7.7A PPAK SO-8
Produkt ist nicht verfügbar
SI8401DB-T1-E1 si8401db.pdf
SI8401DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.6A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Produkt ist nicht verfügbar
SI8402DB-T1-E1 72657.pdf
SI8402DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 5.3A 4MICROFOOT
Produkt ist nicht verfügbar
SI8404DB-T1-E1 73518.pdf
SI8404DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Produkt ist nicht verfügbar
SI8405DB-T1-E1 71814.pdf
SI8405DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3.6A 4MICROFOOT
Produkt ist nicht verfügbar
SI8407DB-T2-E1 Si8407DB.pdf
SI8407DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.8A 6MICRO FOOT
Produkt ist nicht verfügbar
SI8409DB-T1-E1 si8409db.pdf
SI8409DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.6A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
auf Bestellung 7976 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
13+ 2.1 EUR
100+ 1.63 EUR
500+ 1.38 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 11
SI8413DB-T1-E1 si8413db.pdf
SI8413DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.8A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.47W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Produkt ist nicht verfügbar
SI8415DB-T1-E1 73210.pdf
SI8415DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 5.3A 2X2 4-MFP
Produkt ist nicht verfügbar
SI8424DB-T1-E1 si8424db.pdf
SI8424DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12.2A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.2A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.78W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 4 V
Produkt ist nicht verfügbar
SI8429DB-T1-E1 si8429db.pdf
SI8429DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 11.7A 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
auf Bestellung 20174 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.37 EUR
14+ 1.94 EUR
100+ 1.51 EUR
500+ 1.28 EUR
1000+ 1.04 EUR
Mindestbestellmenge: 11
SI8435DB-T1-E1 si8435db.pdf
SI8435DB-T1-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 2X2 4-MFP
Produkt ist nicht verfügbar
SI8901EDB-T2-E1 72941.pdf
SI8901EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.5A 6MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 350µA
Supplier Device Package: 6-Micro Foot™ (2.36x1.56)
Produkt ist nicht verfügbar
SI8902EDB-T2-E1 si8902edb.pdf
SI8902EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 3.9A 6-MFP
Produkt ist nicht verfügbar
SI8904EDB-T2-E1 72948.pdf
SI8904EDB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 3.8A 6-MFP
Produkt ist nicht verfügbar
SI9424BDY-T1-E3 Si9424BDY.pdf
SI9424BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 5.6A 8-SOIC
Produkt ist nicht verfügbar
Si9433BDY-T1-E3 si9433bd.pdf
Si9433BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 11020 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
16+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
SI9434BDY-T1-E3 Si9434BDY.pdf
SI9434BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A 8SO
Produkt ist nicht verfügbar
SI9435BDY-T1-E3
SI9435BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.7A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
auf Bestellung 12824 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
16+ 1.68 EUR
100+ 1.31 EUR
500+ 1.11 EUR
1000+ 0.91 EUR
Mindestbestellmenge: 13
SI9926BDY-T1-E3
SI9926BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 6.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.14W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI9933BDY-T1-E3
SI9933BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 3.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI9934BDY-T1-E3
SI9934BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SIA411DJ-T1-E3 sia411dj.pdf
SIA411DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA443DJ-T1-E3 sia443dj.pdf
SIA443DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC70-6
Produkt ist nicht verfügbar
SIA450DJ-T1-E3 sia450dj.pdf
SIA450DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 1.52A SC70-6
Produkt ist nicht verfügbar
SIA810DJ-T1-E3 sia810dj.pdf
SIA810DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC-70-6
Produkt ist nicht verfügbar
SIA811DJ-T1-E3 sia811dj.pdf
SIA811DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SiA911DJ-T1-E3 sia911dj.pdf
SiA911DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-E3 sia914dj.pdf
SIA914DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB411DK-T1-E3 sib411dk.pdf
SIB411DK-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC75-6
Produkt ist nicht verfügbar
SIB412DK-T1-E3 sib412dk.pdf
SIB412DK-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9A SC75-6
Produkt ist nicht verfügbar
SIB911DK-T1-E3 sib911dk.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6
Produkt ist nicht verfügbar
SIE800DF-T1-E3 sie800df.pdf
SIE800DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE802DF-T1-E3 72985.pdf
SIE802DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE806DF-T1-E3 sie806df.pdf
SIE806DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE810DF-T1-E3 sie810df.pdf
SIE810DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A 10POLARPAK
Produkt ist nicht verfügbar
SIE812DF-T1-E3 sie812df.pdf
SIE812DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE818DF-T1-E3 sie818df.pdf
SIE818DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 60A 10POLARPAK
Packaging: Cut Tape (CT)
Package / Case: 10-PolarPAK® (L)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 10-PolarPAK® (L)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V
Produkt ist nicht verfügbar
SIE820DF-T1-E3 sie820df.pdf
SIE820DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE822DF-T1-E3 sie822df.pdf
SIE822DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE830DF-T1-E3 sie830df.pdf
SIE830DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE832DF-T1-E3 sie832df.pdf
SIE832DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIF902EDZ-T1-E3 72987.pdf
SIF902EDZ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar
SIF912EDZ-T1-E3 72952.pdf
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 7.4A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 2x5
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.4A
Rds On (Max) @ Id, Vgs: 19mOhm @ 7.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® (2x5)
Produkt ist nicht verfügbar
TN0200K-T1-E3 tn0200k.pdf
TN0200K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Produkt ist nicht verfügbar
TN0201K-T1-E3 tn0201k.pdf
TN0201K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 420MA SOT23-3
Produkt ist nicht verfügbar
TN2404K-T1-E3 tn2404k.pdf
TN2404K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 240V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
auf Bestellung 6592 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
TP0101K-T1-E3 72692.pdf
TP0101K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 0.58A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Produkt ist nicht verfügbar
TP0202K-T1-E3 71609.pdf
TP0202K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 385MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 385mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 15 V
Produkt ist nicht verfügbar
TP0610KL-TR1-E3 72712.pdf
TP0610KL-TR1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 270MA TO226AA
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-226AA (TO-92)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 15 V
Produkt ist nicht verfügbar
TP0610K-T1-E3 tp0610k.pdf
TP0610K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
auf Bestellung 901503 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.12 EUR
30+ 0.88 EUR
100+ 0.53 EUR
500+ 0.49 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 24
SUM33N20-60P-E3 sum33n20.pdf
SUM33N20-60P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 33A D2PAK
Produkt ist nicht verfügbar
SI1013R-T1-E3 71167.pdf
SI1013R-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC-75A
Produkt ist nicht verfügbar
Wählen Sie Seite:   [  << Vorherige Seite ]  1 18 29 30 31 32 33 34 35 36 37 38 39 54 72 90 108 126 144 162 180 183  [ Nächste Seite >> ]