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SiA911DJ-T1-E3 SiA911DJ-T1-E3 Vishay Siliconix sia911dj.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-E3 SIA914DJ-T1-E3 Vishay Siliconix sia914dj.pdf Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIE800DF-T1-E3 SIE800DF-T1-E3 Vishay Siliconix sie800df.pdf Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE802DF-T1-E3 SIE802DF-T1-E3 Vishay Siliconix 72985.pdf Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE806DF-T1-E3 SIE806DF-T1-E3 Vishay Siliconix sie806df.pdf Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE812DF-T1-E3 SIE812DF-T1-E3 Vishay Siliconix sie812df.pdf Description: MOSFET N-CH 40V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE820DF-T1-E3 SIE820DF-T1-E3 Vishay Siliconix sie820df.pdf Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE822DF-T1-E3 SIE822DF-T1-E3 Vishay Siliconix sie822df.pdf Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE830DF-T1-E3 SIE830DF-T1-E3 Vishay Siliconix sie830df.pdf Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE832DF-T1-E3 SIE832DF-T1-E3 Vishay Siliconix sie832df.pdf Description: MOSFET N-CH 40V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SUM110N06-3M9H-E3 SUM110N06-3M9H-E3 Vishay Siliconix sum110n0.pdf Description: MOSFET N-CH 60V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V
Produkt ist nicht verfügbar
SUM36N20-54P-E3 SUM36N20-54P-E3 Vishay Siliconix sum36n20.pdf Description: MOSFET N-CH 200V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
SUM09N20-270-E3 SUM09N20-270-E3 Vishay Siliconix sum09n20.pdf Description: MOSFET N-CH 200V 9A TO263
Produkt ist nicht verfügbar
SUM110N04-05H-E3 SUM110N04-05H-E3 Vishay Siliconix 73131.pdf Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Produkt ist nicht verfügbar
SUM110N04-2M3L-E3 SUM110N04-2M3L-E3 Vishay Siliconix Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Produkt ist nicht verfügbar
SUM110N06-3M4L-E3 SUM110N06-3M4L-E3 Vishay Siliconix 73036.pdf Description: MOSFET N-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V
Produkt ist nicht verfügbar
SUM110N10-09-E3 SUM110N10-09-E3 Vishay Siliconix sum110n1.pdf Description: MOSFET N-CH 100V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
800+5.45 EUR
1600+ 4.66 EUR
2400+ 4.39 EUR
Mindestbestellmenge: 800
SUM110P04-05-E3 SUM110P04-05-E3 Vishay Siliconix 73493.pdf Description: MOSFET P-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 15W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 49057 Stücke:
Lieferzeit 21-28 Tag (e)
3+11 EUR
10+ 9.23 EUR
100+ 7.46 EUR
Mindestbestellmenge: 3
SUM110P06-07L-E3 SUM110P06-07L-E3 Vishay Siliconix sum110p06-07l.pdf Description: MOSFET P-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
auf Bestellung 108000 Stücke:
Lieferzeit 21-28 Tag (e)
800+5.45 EUR
1600+ 4.67 EUR
2400+ 4.39 EUR
5600+ 4.22 EUR
Mindestbestellmenge: 800
SUM110P08-11L-E3 SUM110P08-11L-E3 Vishay Siliconix sum110p0.pdf Description: MOSFET P-CH 80V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V
auf Bestellung 35371 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.63 EUR
10+ 8.93 EUR
100+ 7.22 EUR
Mindestbestellmenge: 3
SUM18N25-165-E3 SUM18N25-165-E3 Vishay Siliconix 72849.pdf Description: MOSFET N-CH 250V 18A TO263
Produkt ist nicht verfügbar
SUM23N15-73-E3 SUM23N15-73-E3 Vishay Siliconix sum23n15.pdf Description: MOSFET N-CH 150V 23A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 15A, 10V
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
Produkt ist nicht verfügbar
SUM27N20-78-E3 SUM27N20-78-E3 Vishay Siliconix sum27n20.pdf Description: MOSFET N-CH 200V 27A D2PAK
Produkt ist nicht verfügbar
SUM40N10-30-E3 SUM40N10-30-E3 Vishay Siliconix 72134.pdf Description: MOSFET N-CH 100V 40A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
SUM40N15-38-E3 SUM40N15-38-E3 Vishay Siliconix sum40n15.pdf Description: MOSFET N-CH 150V 40A TO263
Produkt ist nicht verfügbar
SUM45N25-58-E3 SUM45N25-58-E3 Vishay Siliconix sum45n25.pdf Description: MOSFET N-CH 250V 45A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Produkt ist nicht verfügbar
SUM47N10-24L-E3 SUM47N10-24L-E3 Vishay Siliconix sum47n10.pdf Description: MOSFET N-CH 100V 47A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 3.75W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
SUM50N06-16L-E3 SUM50N06-16L-E3 Vishay Siliconix Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 93W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1325 pF @ 25 V
Produkt ist nicht verfügbar
SUM55P06-19L-E3 SUM55P06-19L-E3 Vishay Siliconix sum55p06.pdf Description: MOSFET P-CH 60V 55A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 2421 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.79 EUR
10+ 5.64 EUR
100+ 4.49 EUR
Mindestbestellmenge: 4
SUM60N10-17-E3 SUM60N10-17-E3 Vishay Siliconix 72070.pdf Description: MOSFET N-CH 100V 60A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 2782 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.73 EUR
10+ 5.65 EUR
100+ 4.57 EUR
Mindestbestellmenge: 4
SUM65N20-30-E3 SUM65N20-30-E3 Vishay Siliconix 71702.pdf Description: MOSFET N-CH 200V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
auf Bestellung 5214 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.31 EUR
10+ 9.49 EUR
100+ 7.68 EUR
Mindestbestellmenge: 3
SUM85N15-19-E3 SUM85N15-19-E3 Vishay Siliconix 71703.pdf Description: MOSFET N-CH 150V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+8.15 EUR
Mindestbestellmenge: 800
SUM90N08-4M8P-E3 SUM90N08-4M8P-E3 Vishay Siliconix sum90n08.pdf Description: MOSFET N-CH 75V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 40 V
Produkt ist nicht verfügbar
SUM90P10-19L-E3 SUM90P10-19L-E3 Vishay Siliconix sum90p10.pdf Description: MOSFET P-CH 100V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V
auf Bestellung 2879 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.69 EUR
10+ 8.96 EUR
100+ 7.25 EUR
Mindestbestellmenge: 3
SUM27N20-78-E3 SUM27N20-78-E3 Vishay Siliconix sum27n20.pdf Description: MOSFET N-CH 200V 27A D2PAK
Produkt ist nicht verfügbar
SUM33N20-60P-E3 SUM33N20-60P-E3 Vishay Siliconix sum33n20.pdf Description: MOSFET N-CH 200V 33A D2PAK
Produkt ist nicht verfügbar
DG201BDQ-T1-E3 DG201BDQ-T1-E3 Vishay Siliconix dg201b.pdf Description: IC SW SPST-NCX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.74 EUR
Mindestbestellmenge: 3000
DG201BDY-T1-E3 DG201BDY-T1-E3 Vishay Siliconix dg201b.pdf Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 5000 Stücke:
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DG2041DQ-T1-E3 DG2041DQ-T1-E3 Vishay Siliconix 72091.pdf Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
DG2042DQ-T1-E3 DG2042DQ-T1-E3 Vishay Siliconix 72091.pdf Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
DG2043DQ-T1-E3 DG2043DQ-T1-E3 Vishay Siliconix 72091.pdf Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
DG211BDQ-T1-E3 DG211BDQ-T1-E3 Vishay Siliconix dg211.pdf Description: IC SW SPST-NCX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 6000 Stücke:
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3000+2.75 EUR
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DG211BDY-T1-E3 DG211BDY-T1-E3 Vishay Siliconix dg211.pdf Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 12500 Stücke:
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DG212BDQ-T1-E3 DG212BDQ-T1-E3 Vishay Siliconix dg211.pdf Description: IC SW SPST-NOX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
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DG212BDY-T1-E3 DG212BDY-T1-E3 Vishay Siliconix dg211.pdf Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 5000 Stücke:
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DG213DQ-T1-E3 DG213DQ-T1-E3 Vishay Siliconix dg213.pdf Description: IC SW SPST-NO/NCX4 60OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 130ns, 100ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
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DG213DY-T1-E3 DG213DY-T1-E3 Vishay Siliconix dg213.pdf Description: IC SW SPST-NO/NCX4 60OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 130ns, 100ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+3.05 EUR
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DG403DY-T1-E3 DG403DY-T1-E3 Vishay Siliconix dg401.pdf Description: IC SW SPST-NO/NCX2 45OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
auf Bestellung 7500 Stücke:
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DG4051AEQ-T1-E3 DG4051AEQ-T1-E3 Vishay Siliconix Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG4052AEQ-T1-E3 DG4052AEQ-T1-E3 Vishay Siliconix dg4051a.pdf Description: IC SWITCH SP4TX2 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 450MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 7pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG4053AEQ-T1-E3 DG4053AEQ-T1-E3 Vishay Siliconix dg4051a.pdf Description: IC MULTIPLEXER TRPL 2X1 16TSSOP
Produkt ist nicht verfügbar
DG406DN-T1-E3 DG406DN-T1-E3 Vishay Siliconix dg406.pdf Description: IC MUX 16:1 100OHM 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 1500 Stücke:
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DG406DW-E3 DG406DW-E3 Vishay Siliconix dg406.pdf Description: IC MUX 16:1 100OHM 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 750 Stücke:
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Mindestbestellmenge: 2
DG407DN-T1-E3 DG407DN-T1-E3 Vishay Siliconix dg406.pdf Description: IC MUX DUAL 8:1 100OHM 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
DG407DW-E3 DG407DW-E3 Vishay Siliconix dg406.pdf Description: IC MUX DUAL 8:1 100OHM 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
auf Bestellung 272 Stücke:
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10+ 22.18 EUR
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100+ 18.37 EUR
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DG408DQ-T1-E3 DG408DQ-T1-E3 Vishay Siliconix dg408.pdf Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 6000 Stücke:
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DG408DY-T1-E3 DG408DY-T1-E3 Vishay Siliconix dg408.pdf Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 7500 Stücke:
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DG409DQ-T1-E3 DG409DQ-T1-E3 Vishay Siliconix dg408.pdf Description: IC SWITCH SP4TX2 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Mindestbestellmenge: 3000
DG409DY-T1-E3 DG409DY-T1-E3 Vishay Siliconix dg408.pdf Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
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DG411DY-T1-E3 DG411DY-T1-E3 Vishay Siliconix dg411-extractor.pdf Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 7500 Stücke:
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SiA911DJ-T1-E3 sia911dj.pdf
SiA911DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-E3 sia914dj.pdf
SIA914DJ-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIE800DF-T1-E3 sie800df.pdf
SIE800DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE802DF-T1-E3 72985.pdf
SIE802DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE806DF-T1-E3 sie806df.pdf
SIE806DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE812DF-T1-E3 sie812df.pdf
SIE812DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A 10-POLARPAK
Produkt ist nicht verfügbar
SIE820DF-T1-E3 sie820df.pdf
SIE820DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE822DF-T1-E3 sie822df.pdf
SIE822DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE830DF-T1-E3 sie830df.pdf
SIE830DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SIE832DF-T1-E3 sie832df.pdf
SIE832DF-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A 10-POLARPAK
Produkt ist nicht verfügbar
SUM110N06-3M9H-E3 sum110n0.pdf
SUM110N06-3M9H-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V
Produkt ist nicht verfügbar
SUM36N20-54P-E3 sum36n20.pdf
SUM36N20-54P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V
Power Dissipation (Max): 3.12W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Produkt ist nicht verfügbar
SUM09N20-270-E3 sum09n20.pdf
SUM09N20-270-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 9A TO263
Produkt ist nicht verfügbar
SUM110N04-05H-E3 73131.pdf
SUM110N04-05H-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Produkt ist nicht verfügbar
SUM110N04-2M3L-E3
SUM110N04-2M3L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Produkt ist nicht verfügbar
SUM110N06-3M4L-E3 73036.pdf
SUM110N06-3M4L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V
Produkt ist nicht verfügbar
SUM110N10-09-E3 sum110n1.pdf
SUM110N10-09-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+5.45 EUR
1600+ 4.66 EUR
2400+ 4.39 EUR
Mindestbestellmenge: 800
SUM110P04-05-E3 73493.pdf
SUM110P04-05-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 15W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
auf Bestellung 49057 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11 EUR
10+ 9.23 EUR
100+ 7.46 EUR
Mindestbestellmenge: 3
SUM110P06-07L-E3 sum110p06-07l.pdf
SUM110P06-07L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
auf Bestellung 108000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+5.45 EUR
1600+ 4.67 EUR
2400+ 4.39 EUR
5600+ 4.22 EUR
Mindestbestellmenge: 800
SUM110P08-11L-E3 sum110p0.pdf
SUM110P08-11L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V
auf Bestellung 35371 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.63 EUR
10+ 8.93 EUR
100+ 7.22 EUR
Mindestbestellmenge: 3
SUM18N25-165-E3 72849.pdf
SUM18N25-165-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 18A TO263
Produkt ist nicht verfügbar
SUM23N15-73-E3 sum23n15.pdf
SUM23N15-73-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 23A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 15A, 10V
Power Dissipation (Max): 3.75W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
Produkt ist nicht verfügbar
SUM27N20-78-E3 sum27n20.pdf
SUM27N20-78-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 27A D2PAK
Produkt ist nicht verfügbar
SUM40N10-30-E3 72134.pdf
SUM40N10-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V
Power Dissipation (Max): 3.75W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
SUM40N15-38-E3 sum40n15.pdf
SUM40N15-38-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 40A TO263
Produkt ist nicht verfügbar
SUM45N25-58-E3 sum45n25.pdf
SUM45N25-58-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 45A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Produkt ist nicht verfügbar
SUM47N10-24L-E3 sum47n10.pdf
SUM47N10-24L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 47A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 3.75W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
SUM50N06-16L-E3
SUM50N06-16L-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 93W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1325 pF @ 25 V
Produkt ist nicht verfügbar
SUM55P06-19L-E3 sum55p06.pdf
SUM55P06-19L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 55A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 2421 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.79 EUR
10+ 5.64 EUR
100+ 4.49 EUR
Mindestbestellmenge: 4
SUM60N10-17-E3 72070.pdf
SUM60N10-17-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 60A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
auf Bestellung 2782 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.73 EUR
10+ 5.65 EUR
100+ 4.57 EUR
Mindestbestellmenge: 4
SUM65N20-30-E3 71702.pdf
SUM65N20-30-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
auf Bestellung 5214 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.31 EUR
10+ 9.49 EUR
100+ 7.68 EUR
Mindestbestellmenge: 3
SUM85N15-19-E3 71703.pdf
SUM85N15-19-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 85A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+8.15 EUR
Mindestbestellmenge: 800
SUM90N08-4M8P-E3 sum90n08.pdf
SUM90N08-4M8P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 75V 90A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 40 V
Produkt ist nicht verfügbar
SUM90P10-19L-E3 sum90p10.pdf
SUM90P10-19L-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V
Power Dissipation (Max): 13.6W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V
auf Bestellung 2879 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.69 EUR
10+ 8.96 EUR
100+ 7.25 EUR
Mindestbestellmenge: 3
SUM27N20-78-E3 sum27n20.pdf
SUM27N20-78-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 27A D2PAK
Produkt ist nicht verfügbar
SUM33N20-60P-E3 sum33n20.pdf
SUM33N20-60P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 33A D2PAK
Produkt ist nicht verfügbar
DG201BDQ-T1-E3 dg201b.pdf
DG201BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.74 EUR
Mindestbestellmenge: 3000
DG201BDY-T1-E3 dg201b.pdf
DG201BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+3.01 EUR
5000+ 2.9 EUR
Mindestbestellmenge: 2500
DG2041DQ-T1-E3 72091.pdf
DG2041DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
DG2042DQ-T1-E3 72091.pdf
DG2042DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
DG2043DQ-T1-E3 72091.pdf
DG2043DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16TSSOP
Produkt ist nicht verfügbar
DG211BDQ-T1-E3 dg211.pdf
DG211BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.75 EUR
6000+ 2.65 EUR
Mindestbestellmenge: 3000
DG211BDY-T1-E3 dg211.pdf
DG211BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 85OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.41 EUR
5000+ 2.32 EUR
Mindestbestellmenge: 2500
DG212BDQ-T1-E3 dg211.pdf
DG212BDQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 85OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.81 EUR
6000+ 2.71 EUR
Mindestbestellmenge: 3000
DG212BDY-T1-E3 dg211.pdf
DG212BDY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 85OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 85Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 4.5V ~ 25V
Voltage - Supply, Dual (V±): ±4.5V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 300ns, 200ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.58 EUR
5000+ 2.48 EUR
Mindestbestellmenge: 2500
DG213DQ-T1-E3 dg213.pdf
DG213DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 60OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 130ns, 100ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.79 EUR
Mindestbestellmenge: 3000
DG213DY-T1-E3 dg213.pdf
DG213DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 60OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 60Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 1pC
Crosstalk: -95dB @ 100kHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 130ns, 100ns
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+3.05 EUR
Mindestbestellmenge: 2500
DG403DY-T1-E3 dg401.pdf
DG403DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 45OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.39 EUR
5000+ 2.3 EUR
Mindestbestellmenge: 2500
DG4051AEQ-T1-E3
DG4051AEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG4052AEQ-T1-E3 dg4051a.pdf
DG4052AEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4TX2 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 450MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 7pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG4053AEQ-T1-E3 dg4051a.pdf
DG4053AEQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MULTIPLEXER TRPL 2X1 16TSSOP
Produkt ist nicht verfügbar
DG406DN-T1-E3 dg406.pdf
DG406DN-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 16:1 100OHM 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
500+13.74 EUR
1000+ 11.96 EUR
Mindestbestellmenge: 500
DG406DW-E3 dg406.pdf
DG406DW-E3
Hersteller: Vishay Siliconix
Description: IC MUX 16:1 100OHM 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 16:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+19.92 EUR
10+ 18 EUR
25+ 17.16 EUR
100+ 14.9 EUR
250+ 14.23 EUR
500+ 12.98 EUR
Mindestbestellmenge: 2
DG407DN-T1-E3 dg406.pdf
DG407DN-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 8:1 100OHM 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-PLCC (11.51x11.51)
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
Produkt ist nicht verfügbar
DG407DW-E3 dg406.pdf
DG407DW-E3
Hersteller: Vishay Siliconix
Description: IC MUX DUAL 8:1 100OHM 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 28-SOIC
Voltage - Supply, Single (V+): 7.5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 15pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 200ns, 150ns
Channel Capacitance (CS(off), CD(off)): 8pF, 65pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
auf Bestellung 272 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+24.57 EUR
10+ 22.18 EUR
25+ 21.15 EUR
100+ 18.37 EUR
250+ 17.54 EUR
Mindestbestellmenge: 2
DG408DQ-T1-E3 dg408.pdf
DG408DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.93 EUR
6000+ 3.78 EUR
Mindestbestellmenge: 3000
DG408DY-T1-E3 dg408.pdf
DG408DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 1
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.49 EUR
5000+ 2.4 EUR
Mindestbestellmenge: 2500
DG409DQ-T1-E3 dg408.pdf
DG409DQ-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4TX2 100OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+4.26 EUR
Mindestbestellmenge: 3000
DG409DY-T1-E3 dg408.pdf
DG409DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Current - Leakage (IS(off)) (Max): 500pA
Part Status: Active
Number of Circuits: 2
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.49 EUR
5000+ 2.4 EUR
Mindestbestellmenge: 2500
DG411DY-T1-E3 dg411-extractor.pdf
DG411DY-T1-E3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.63 EUR
5000+ 2.53 EUR
Mindestbestellmenge: 2500
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