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SI7720DN-T1-GE3 SI7720DN-T1-GE3 Vishay Siliconix si7720dn.pdf Description: MOSFET N-CH 30V 12A 1212-8
Produkt ist nicht verfügbar
Si7726DN-T1-GE3 Si7726DN-T1-GE3 Vishay Siliconix si7726dn.pdf Description: MOSFET N-CH 30V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 15 V
Produkt ist nicht verfügbar
SI7738DP-T1-GE3 SI7738DP-T1-GE3 Vishay Siliconix si7738dp.pdf Description: MOSFET N-CH 150V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+3.4 EUR
Mindestbestellmenge: 3000
SI7742DP-T1-GE3 SI7742DP-T1-GE3 Vishay Siliconix si7742dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Produkt ist nicht verfügbar
SI7748DP-T1-GE3 SI7748DP-T1-GE3 Vishay Siliconix si7748dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
Produkt ist nicht verfügbar
SI7758DP-T1-GE3 SI7758DP-T1-GE3 Vishay Siliconix si7758dp.pdf Description: MOSFET N-CH 30V 60A PPAK SO-8
Produkt ist nicht verfügbar
SI7784DP-T1-GE3 SI7784DP-T1-GE3 Vishay Siliconix si7784dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
SI7788DP-T1-GE3 SI7788DP-T1-GE3 Vishay Siliconix si7788dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SI7790DP-T1-GE3 SI7790DP-T1-GE3 Vishay Siliconix si7790dp.pdf Description: MOSFET N-CH 40V 50A PPAK SO-8
Produkt ist nicht verfügbar
SI7802DN-T1-GE3 SI7802DN-T1-GE3 Vishay Siliconix si7802dn.pdf Description: MOSFET N-CH 250V 1.24A 1212-8
Produkt ist nicht verfügbar
SI7848BDP-T1-GE3 SI7848BDP-T1-GE3 Vishay Siliconix si7848bdp.pdf Description: MOSFET N-CH 40V 47A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.8 EUR
6000+ 1.73 EUR
9000+ 1.68 EUR
Mindestbestellmenge: 3000
SI7852ADP-T1-GE3 SI7852ADP-T1-GE3 Vishay Siliconix si7852ad.pdf description Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.4 EUR
6000+ 2.31 EUR
Mindestbestellmenge: 3000
SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix 71858.pdf Description: MOSFET N-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7884BDP-T1-GE3 SI7884BDP-T1-GE3 Vishay Siliconix si7884bd.pdf Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.08 EUR
6000+ 2 EUR
9000+ 1.94 EUR
Mindestbestellmenge: 3000
SI7905DN-T1-GE3 SI7905DN-T1-GE3 Vishay Siliconix si7905dn.pdf Description: MOSFET 2P-CH 40V 6A PPAK 1212-8
Produkt ist nicht verfügbar
SI7940DP-T1-GE3 SI7940DP-T1-GE3 Vishay Siliconix 71845.pdf Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7948DP-T1-GE3 SI7948DP-T1-GE3 Vishay Siliconix si7948dp.pdf Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Produkt ist nicht verfügbar
Si7980DP-T1-GE3 Si7980DP-T1-GE3 Vishay Siliconix si7980dp.pdf Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Produkt ist nicht verfügbar
SI7994DP-T1-GE3 SI7994DP-T1-GE3 Vishay Siliconix si7994dp.pdf Description: MOSFET 2N-CH 30V 60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
SIA408DJ-T1-GE3 SIA408DJ-T1-GE3 Vishay Siliconix sia408dj.pdf Description: MOSFET N-CH 30V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 Vishay Siliconix SiA413DJ_RevD_21-May-12.pdf Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 171000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.88 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
SIA414DJ-T1-GE3 SIA414DJ-T1-GE3 Vishay Siliconix sia414dj.pdf Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.99 EUR
6000+ 0.94 EUR
15000+ 0.91 EUR
Mindestbestellmenge: 3000
SIA415DJ-T1-GE3 SIA415DJ-T1-GE3 Vishay Siliconix sia415dj.pdf Description: MOSFET P-CH 20V 12A SC70-6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA417DJ-T1-GE3 SIA417DJ-T1-GE3 Vishay Siliconix sia417dj.pdf Description: MOSFET P-CH 8V 12A SC70-6
Produkt ist nicht verfügbar
SIA419DJ-T1-GE3 SIA419DJ-T1-GE3 Vishay Siliconix sia419dj.pdf Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA421DJ-T1-GE3 SIA421DJ-T1-GE3 Vishay Siliconix sia421dj.pdf Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.98 EUR
6000+ 0.93 EUR
15000+ 0.9 EUR
Mindestbestellmenge: 3000
SIA426DJ-T1-GE3 SIA426DJ-T1-GE3 Vishay Siliconix sia426dj.pdf Description: MOSFET N-CH 20V 4.5A SC70-6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA430DJ-T1-GE3 SIA430DJ-T1-GE3 Vishay Siliconix sia430dj.pdf Description: MOSFET N-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA432DJ-T1-GE3 SIA432DJ-T1-GE3 Vishay Siliconix sia432dj.pdf Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
Produkt ist nicht verfügbar
SIA456DJ-T1-GE3 SIA456DJ-T1-GE3 Vishay Siliconix sia456dj.pdf Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
auf Bestellung 22200 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.89 EUR
6000+ 0.85 EUR
9000+ 0.81 EUR
Mindestbestellmenge: 3000
SIA511DJ-T1-GE3 SIA511DJ-T1-GE3 Vishay Siliconix sia511dj.pdf Description: MOSFET N/P-CH 12V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA513DJ-T1-GE3 SIA513DJ-T1-GE3 Vishay Siliconix sia513dj.pdf Description: MOSFET N/P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA813DJ-T1-GE3 SIA813DJ-T1-GE3 Vishay Siliconix sia813dj.pdf Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA814DJ-T1-GE3 SIA814DJ-T1-GE3 Vishay Siliconix sia814dj.pdf Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Produkt ist nicht verfügbar
SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3 Vishay Siliconix sia911ed.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA912DJ-T1-GE3 SIA912DJ-T1-GE3 Vishay Siliconix sia912dj.pdf Description: MOSFET 2N-CH 12V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA913DJ-T1-GE3 SIA913DJ-T1-GE3 Vishay Siliconix sia913dj.pdf Description: MOSFET 2P-CH 12V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA917DJ-T1-GE3 SIA917DJ-T1-GE3 Vishay Siliconix sia917dj.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB413DK-T1-GE3 SIB413DK-T1-GE3 Vishay Siliconix sib413dk.pdf Description: MOSFET P-CH 20V 9A SC75-6
Produkt ist nicht verfügbar
SIB414DK-T1-GE3 SIB414DK-T1-GE3 Vishay Siliconix sib414dk.pdf Description: MOSFET N-CH 8V 9A PPAK SC75-6
Produkt ist nicht verfügbar
SIB415DK-T1-GE3 SIB415DK-T1-GE3 Vishay Siliconix sib415dk.pdf Description: MOSFET P-CH 30V 9A SC75-6
Produkt ist nicht verfügbar
SIB417DK-T1-GE3 SIB417DK-T1-GE3 Vishay Siliconix sib417dk.pdf Description: MOSFET P-CH 8V 9A SC75-6
Produkt ist nicht verfügbar
SIB417EDK-T1-GE3 SIB417EDK-T1-GE3 Vishay Siliconix sib417ed.pdf Description: MOSFET P-CH 8V 9A PPAK SC75-6
Produkt ist nicht verfügbar
SIB419DK-T1-GE3 SIB419DK-T1-GE3 Vishay Siliconix sib419dk.pdf Description: MOSFET P-CH 12V 9A SC75-6
Produkt ist nicht verfügbar
SIB452DK-T1-GE3 SIB452DK-T1-GE3 Vishay Siliconix sib452dk.pdf Description: MOSFET N-CH 190V 1.5A PPAK SC75
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 50 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.69 EUR
6000+ 0.65 EUR
9000+ 0.61 EUR
30000+ 0.6 EUR
Mindestbestellmenge: 3000
SIB800EDK-T1-GE3 SIB800EDK-T1-GE3 Vishay Siliconix sib800ed.pdf Description: MOSFET N-CH 20V 1.5A SC75-6
Produkt ist nicht verfügbar
SIB914DK-T1-GE3 SIB914DK-T1-GE3 Vishay Siliconix sib914dk.pdf Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Produkt ist nicht verfügbar
SIR402DP-T1-GE3 SIR402DP-T1-GE3 Vishay Siliconix sir402dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
SIR440DP-T1-GE3 SIR440DP-T1-GE3 Vishay Siliconix sir440dp.pdf Description: MOSFET N-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.07 EUR
6000+ 2 EUR
Mindestbestellmenge: 3000
SIR462DP-T1-GE3 SIR462DP-T1-GE3 Vishay Siliconix sir462dp.pdf Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.11 EUR
6000+ 1.06 EUR
9000+ 1.01 EUR
Mindestbestellmenge: 3000
SIR464DP-T1-GE3 SIR464DP-T1-GE3 Vishay Siliconix sir464dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.54 EUR
Mindestbestellmenge: 3000
SIR466DP-T1-GE3 SIR466DP-T1-GE3 Vishay Siliconix sir466dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V
auf Bestellung 19000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.13 EUR
6000+ 1.07 EUR
9000+ 1.02 EUR
Mindestbestellmenge: 3000
SIR468DP-T1-GE3 SIR468DP-T1-GE3 Vishay Siliconix sir468dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIR470DP-T1-GE3 SIR470DP-T1-GE3 Vishay Siliconix sir470dp.pdf Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+2.93 EUR
6000+ 2.82 EUR
Mindestbestellmenge: 3000
SIR472DP-T1-GE3 SIR472DP-T1-GE3 Vishay Siliconix sir472dp.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
SIR476DP-T1-GE3 SIR476DP-T1-GE3 Vishay Siliconix sir476dp.pdf Description: MOSFET N-CH 25V 60A PPAK SO-8
Produkt ist nicht verfügbar
SIR492DP-T1-GE3 SIR492DP-T1-GE3 Vishay Siliconix sir492dp.pdf Description: MOSFET N-CH 12V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIR496DP-T1-GE3 SIR496DP-T1-GE3 Vishay Siliconix sir496dp.pdf Description: MOSFET N-CH 20V 35A PPAK SO-8
Produkt ist nicht verfügbar
SIR840DP-T1-GE3 SIR840DP-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
SIR850DP-T1-GE3 SIR850DP-T1-GE3 Vishay Siliconix sir850dp.pdf Description: MOSFET N-CH 25V 30A PPAK SO-8
Produkt ist nicht verfügbar
SI7720DN-T1-GE3 si7720dn.pdf
SI7720DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 1212-8
Produkt ist nicht verfügbar
Si7726DN-T1-GE3 si7726dn.pdf
Si7726DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 15 V
Produkt ist nicht verfügbar
SI7738DP-T1-GE3 si7738dp.pdf
SI7738DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V
Power Dissipation (Max): 5.4W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.4 EUR
Mindestbestellmenge: 3000
SI7742DP-T1-GE3 si7742dp.pdf
SI7742DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Produkt ist nicht verfügbar
SI7748DP-T1-GE3 si7748dp.pdf
SI7748DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Produkt ist nicht verfügbar
SI7758DP-T1-GE3 si7758dp.pdf
SI7758DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 60A PPAK SO-8
Produkt ist nicht verfügbar
SI7784DP-T1-GE3 si7784dp.pdf
SI7784DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
SI7788DP-T1-GE3 si7788dp.pdf
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SI7790DP-T1-GE3 si7790dp.pdf
SI7790DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
Produkt ist nicht verfügbar
SI7802DN-T1-GE3 si7802dn.pdf
SI7802DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
Produkt ist nicht verfügbar
SI7848BDP-T1-GE3 si7848bdp.pdf
SI7848BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 47A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.8 EUR
6000+ 1.73 EUR
9000+ 1.68 EUR
Mindestbestellmenge: 3000
SI7852ADP-T1-GE3 description si7852ad.pdf
SI7852ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.4 EUR
6000+ 2.31 EUR
Mindestbestellmenge: 3000
SI7882DP-T1-GE3 71858.pdf
SI7882DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7884BDP-T1-GE3 si7884bd.pdf
SI7884BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 16A, 10V
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3540 pF @ 20 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.08 EUR
6000+ 2 EUR
9000+ 1.94 EUR
Mindestbestellmenge: 3000
SI7905DN-T1-GE3 si7905dn.pdf
SI7905DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 40V 6A PPAK 1212-8
Produkt ist nicht verfügbar
SI7940DP-T1-GE3 71845.pdf
SI7940DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7948DP-T1-GE3 si7948dp.pdf
SI7948DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Produkt ist nicht verfügbar
Si7980DP-T1-GE3 si7980dp.pdf
Si7980DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
Produkt ist nicht verfügbar
SI7994DP-T1-GE3 si7994dp.pdf
SI7994DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 60A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 46W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
SIA408DJ-T1-GE3 sia408dj.pdf
SIA408DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA413DJ-T1-GE3 SiA413DJ_RevD_21-May-12.pdf
SIA413DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
auf Bestellung 171000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
6000+ 0.84 EUR
9000+ 0.8 EUR
Mindestbestellmenge: 3000
SIA414DJ-T1-GE3 sia414dj.pdf
SIA414DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 4 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.99 EUR
6000+ 0.94 EUR
15000+ 0.91 EUR
Mindestbestellmenge: 3000
SIA415DJ-T1-GE3 sia415dj.pdf
SIA415DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA417DJ-T1-GE3 sia417dj.pdf
SIA417DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A SC70-6
Produkt ist nicht verfügbar
SIA419DJ-T1-GE3 sia419dj.pdf
SIA419DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA421DJ-T1-GE3 sia421dj.pdf
SIA421DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.98 EUR
6000+ 0.93 EUR
15000+ 0.9 EUR
Mindestbestellmenge: 3000
SIA426DJ-T1-GE3 sia426dj.pdf
SIA426DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SIA430DJ-T1-GE3 sia430dj.pdf
SIA430DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA432DJ-T1-GE3 sia432dj.pdf
SIA432DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
Produkt ist nicht verfügbar
SIA456DJ-T1-GE3 sia456dj.pdf
SIA456DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.6A PPAK SC70
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V
auf Bestellung 22200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.89 EUR
6000+ 0.85 EUR
9000+ 0.81 EUR
Mindestbestellmenge: 3000
SIA511DJ-T1-GE3 sia511dj.pdf
SIA511DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA513DJ-T1-GE3 sia513dj.pdf
SIA513DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA813DJ-T1-GE3 sia813dj.pdf
SIA813DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA814DJ-T1-GE3 sia814dj.pdf
SIA814DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A PPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.9W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 10 V
Produkt ist nicht verfügbar
SIA911EDJ-T1-GE3 sia911ed.pdf
SIA911EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA912DJ-T1-GE3 sia912dj.pdf
SIA912DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 12V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA913DJ-T1-GE3 sia913dj.pdf
SIA913DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA917DJ-T1-GE3 sia917dj.pdf
SIA917DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB413DK-T1-GE3 sib413dk.pdf
SIB413DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9A SC75-6
Produkt ist nicht verfügbar
SIB414DK-T1-GE3 sib414dk.pdf
SIB414DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 9A PPAK SC75-6
Produkt ist nicht verfügbar
SIB415DK-T1-GE3 sib415dk.pdf
SIB415DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A SC75-6
Produkt ist nicht verfügbar
SIB417DK-T1-GE3 sib417dk.pdf
SIB417DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC75-6
Produkt ist nicht verfügbar
SIB417EDK-T1-GE3 sib417ed.pdf
SIB417EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A PPAK SC75-6
Produkt ist nicht verfügbar
SIB419DK-T1-GE3 sib419dk.pdf
SIB419DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A SC75-6
Produkt ist nicht verfügbar
SIB452DK-T1-GE3 sib452dk.pdf
SIB452DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 190V 1.5A PPAK SC75
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 2.4W (Ta), 13W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 50 V
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.69 EUR
6000+ 0.65 EUR
9000+ 0.61 EUR
30000+ 0.6 EUR
Mindestbestellmenge: 3000
SIB800EDK-T1-GE3 sib800ed.pdf
SIB800EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.5A SC75-6
Produkt ist nicht verfügbar
SIB914DK-T1-GE3 sib914dk.pdf
SIB914DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Produkt ist nicht verfügbar
SIR402DP-T1-GE3 sir402dp.pdf
SIR402DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
SIR440DP-T1-GE3 sir440dp.pdf
SIR440DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.07 EUR
6000+ 2 EUR
Mindestbestellmenge: 3000
SIR462DP-T1-GE3 sir462dp.pdf
SIR462DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.11 EUR
6000+ 1.06 EUR
9000+ 1.01 EUR
Mindestbestellmenge: 3000
SIR464DP-T1-GE3 sir464dp.pdf
SIR464DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.54 EUR
Mindestbestellmenge: 3000
SIR466DP-T1-GE3 sir466dp.pdf
SIR466DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 15 V
auf Bestellung 19000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.13 EUR
6000+ 1.07 EUR
9000+ 1.02 EUR
Mindestbestellmenge: 3000
SIR468DP-T1-GE3 sir468dp.pdf
SIR468DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIR470DP-T1-GE3 sir470dp.pdf
SIR470DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.93 EUR
6000+ 2.82 EUR
Mindestbestellmenge: 3000
SIR472DP-T1-GE3 sir472dp.pdf
SIR472DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Produkt ist nicht verfügbar
SIR476DP-T1-GE3 sir476dp.pdf
SIR476DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8
Produkt ist nicht verfügbar
SIR492DP-T1-GE3 sir492dp.pdf
SIR492DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 40A PPAK SO-8
Produkt ist nicht verfügbar
SIR496DP-T1-GE3 sir496dp.pdf
SIR496DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 35A PPAK SO-8
Produkt ist nicht verfügbar
SIR840DP-T1-GE3
SIR840DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PowerPAK® SO-8
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
SIR850DP-T1-GE3 sir850dp.pdf
SIR850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
Produkt ist nicht verfügbar
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