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SiR690DP-T1-GE3 SiR690DP-T1-GE3 Vishay Siliconix sir690dp.pdf Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
auf Bestellung 4515 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+ 2.15 EUR
100+ 1.72 EUR
500+ 1.45 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 7
DG9232EDY-T1-GE3 DG9232EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST DUAL 8SOIC
Produkt ist nicht verfügbar
DG9232EDY-T1-GE3 DG9232EDY-T1-GE3 Vishay Siliconix dg9232e.pdf Description: IC SWITCH SPST DUAL 8SOIC
auf Bestellung 2389 Stücke:
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SISF06DN-T1-GE3 Vishay Siliconix Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Produkt ist nicht verfügbar
SISF06DN-T1-GE3 Vishay Siliconix Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
auf Bestellung 1959 Stücke:
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SIDR680ADP-T1-RE3 Vishay Siliconix sidr680adp.pdf Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Produkt ist nicht verfügbar
DG2723DN-T1-GE4 Vishay Siliconix dg2723.pdf Description: IC SWITCH DUAL SPDT 10-MINIQFN
Produkt ist nicht verfügbar
SQJ147ELP-T1_GE3 SQJ147ELP-T1_GE3 Vishay Siliconix sqj147elp.pdf Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 23962 Stücke:
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12+1.55 EUR
14+ 1.26 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SI7469ADP-T1-RE3 SI7469ADP-T1-RE3 Vishay Siliconix si7469adp.pdf Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Produkt ist nicht verfügbar
SIR681DP-T1-RE3 SIR681DP-T1-RE3 Vishay Siliconix sir681dp.pdf Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
Produkt ist nicht verfügbar
SUM90N04-3M3P-E3 SUM90N04-3M3P-E3 Vishay Siliconix sum90n043m3p.pdf Description: MOSFET N-CH 40V 90A TO263
Produkt ist nicht verfügbar
SUM90N04-3M3P-E3 SUM90N04-3M3P-E3 Vishay Siliconix sum90n043m3p.pdf Description: MOSFET N-CH 40V 90A TO263
Produkt ist nicht verfügbar
SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 Vishay Siliconix sis932edn.pdf Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIS932EDN-T1-GE3 SIS932EDN-T1-GE3 Vishay Siliconix sis932edn.pdf Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJA34EP-T1_GE3 SQJA34EP-T1_GE3 Vishay Siliconix sqja34ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
Produkt ist nicht verfügbar
SQJA34EP-T1_GE3 SQJA34EP-T1_GE3 Vishay Siliconix sqja34ep.pdf Description: MOSFET N-CH 40V 75A PPAK SO-8
auf Bestellung 970 Stücke:
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SI2319CDS-T1-BE3 SI2319CDS-T1-BE3 Vishay Siliconix si2319cd.pdf Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.31 EUR
6000+ 0.29 EUR
Mindestbestellmenge: 3000
SI2319CDS-T1-BE3 SI2319CDS-T1-BE3 Vishay Siliconix si2319cd.pdf Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
SIZ256DT-T1-GE3 SIZ256DT-T1-GE3 Vishay Siliconix siz256dt.pdf Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Produkt ist nicht verfügbar
SIRA20BDP-T1-GE3 SIRA20BDP-T1-GE3 Vishay Siliconix sira20bdp.pdf Description: MOSFET N-CH 25V 82A/335A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
auf Bestellung 10920 Stücke:
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7+2.78 EUR
10+ 2.28 EUR
100+ 1.77 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 7
SQJ136ELP-T1_GE3 SQJ136ELP-T1_GE3 Vishay Siliconix sqj136elp.pdf Description: MOSFET N-CH 40V 350A PPAK SO-8
Produkt ist nicht verfügbar
SIZ340BDT-T1-GE3 SIZ340BDT-T1-GE3 Vishay Siliconix siz340bdt.pdf Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.44 EUR
Mindestbestellmenge: 3000
SIZ340BDT-T1-GE3 SIZ340BDT-T1-GE3 Vishay Siliconix siz340bdt.pdf Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 6089 Stücke:
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16+1.16 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.58 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
SI7252ADP-T1-GE3 SI7252ADP-T1-GE3 Vishay Siliconix si7252adp.pdf Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.16 EUR
6000+ 1.11 EUR
9000+ 1.08 EUR
Mindestbestellmenge: 3000
SI7252ADP-T1-GE3 SI7252ADP-T1-GE3 Vishay Siliconix si7252adp.pdf Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 11508 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.57 EUR
10+ 2.13 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 7
SQJB60EP-T2_GE3 Vishay Siliconix sqjb60ep.pdf Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ910AEP-T2_GE3 Vishay Siliconix sqj910aep.pdf Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
SQR100N04-3M8R_GE3 Vishay Siliconix Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Produkt ist nicht verfügbar
SQC40016E_DFFR Vishay Siliconix Description: N-CHANNEL 40-V (D-S) MOSFET
Produkt ist nicht verfügbar
SIR106DP-T1-RE3 SIR106DP-T1-RE3 Vishay Siliconix sir106dp.pdf Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.29 EUR
6000+ 1.24 EUR
Mindestbestellmenge: 3000
SIR106DP-T1-RE3 SIR106DP-T1-RE3 Vishay Siliconix sir106dp.pdf Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6804 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.85 EUR
10+ 2.38 EUR
100+ 1.89 EUR
500+ 1.6 EUR
1000+ 1.36 EUR
Mindestbestellmenge: 7
SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Siliconix sir640adp.pdf Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Produkt ist nicht verfügbar
SIR640ADP-T1-GE3 SIR640ADP-T1-GE3 Vishay Siliconix sir640adp.pdf Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Produkt ist nicht verfügbar
SUD15N15-95-BE3 SUD15N15-95-BE3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.57 EUR
Mindestbestellmenge: 2000
SUD15N15-95-BE3 SUD15N15-95-BE3 Vishay Siliconix sud15n15.pdf Description: MOSFET N-CH 150V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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SUD35N10-26P-BE3 SUD35N10-26P-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Produkt ist nicht verfügbar
SUD35N10-26P-BE3 SUD35N10-26P-BE3 Vishay Siliconix Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
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SI7322ADN-T1-GE3 SI7322ADN-T1-GE3 Vishay Siliconix si7322adn.pdf Description: MOSFET N-CH 100V 15.1A PPAK
Produkt ist nicht verfügbar
SI7322ADN-T1-GE3 SI7322ADN-T1-GE3 Vishay Siliconix si7322adn.pdf Description: MOSFET N-CH 100V 15.1A PPAK
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SISA72DN-T1-GE3 SISA72DN-T1-GE3 Vishay Siliconix sisa72dn.pdf Description: MOSFET N-CH 40V 60A PPAK1212-8
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SISA72DN-T1-GE3 SISA72DN-T1-GE3 Vishay Siliconix sisa72dn.pdf Description: MOSFET N-CH 40V 60A PPAK1212-8
auf Bestellung 5424 Stücke:
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SISS92DN-T1-GE3 SISS92DN-T1-GE3 Vishay Siliconix siss92dn.pdf Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
Produkt ist nicht verfügbar
SIHA24N80AE-GE3 SIHA24N80AE-GE3 Vishay Siliconix siha24n80ae.pdf Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
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SIHG24N80AE-GE3 SIHG24N80AE-GE3 Vishay Siliconix sihg24n80ae.pdf Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
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IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Produkt ist nicht verfügbar
IRFR1N60ATRPBF-BE3 IRFR1N60ATRPBF-BE3 Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
auf Bestellung 1869 Stücke:
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SI1902DL-T1-BE3 SI1902DL-T1-BE3 Vishay Siliconix si1902dl.pdf Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1902DL-T1-BE3 SI1902DL-T1-BE3 Vishay Siliconix si1902dl.pdf Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 2964 Stücke:
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SIHFPS37N50A-GE3 SIHFPS37N50A-GE3 Vishay Siliconix sihfps37n50a.pdf Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
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SI1023CX-T1-GE3 SI1023CX-T1-GE3 Vishay Siliconix si1023cx.pdf Description: MOSFET 2P-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
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SI1023CX-T1-GE3 SI1023CX-T1-GE3 Vishay Siliconix si1023cx.pdf Description: MOSFET 2P-CH 20V SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 59655 Stücke:
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SIHP21N60EF-BE3 SIHP21N60EF-BE3 Vishay Siliconix sihp21n60ef.pdf Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Produkt ist nicht verfügbar
SIZF906BDT-T1-GE3 SIZF906BDT-T1-GE3 Vishay Siliconix sizf906bdt.pdf Description: MOSFET 2N-CH 30V 36A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
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SIZF906BDT-T1-GE3 SIZF906BDT-T1-GE3 Vishay Siliconix sizf906bdt.pdf Description: MOSFET 2N-CH 30V 36A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
auf Bestellung 28356 Stücke:
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SIC651ACD-T1-GE3 SIC651ACD-T1-GE3 Vishay Siliconix sic651.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
SIC651ACD-T1-GE3 SIC651ACD-T1-GE3 Vishay Siliconix sic651.pdf Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
auf Bestellung 2685 Stücke:
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SQJ476EP-T1_GE3 SQJ476EP-T1_GE3 Vishay Siliconix sqj476ep.pdf Description: MOSFET N-CH 100V 23A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SIS126DN-T1-GE3 SIS126DN-T1-GE3 Vishay Siliconix sis126dn.pdf Description: MOSFET N-CH 80V 12A/45.1A PPAK
auf Bestellung 6000 Stücke:
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SIS126DN-T1-GE3 SIS126DN-T1-GE3 Vishay Siliconix sis126dn.pdf Description: MOSFET N-CH 80V 12A/45.1A PPAK
auf Bestellung 9215 Stücke:
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SIHH080N60E-T1-GE3 SIHH080N60E-T1-GE3 Vishay Siliconix sihh080n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Produkt ist nicht verfügbar
SiR690DP-T1-GE3 sir690dp.pdf
SiR690DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 34.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.4A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
auf Bestellung 4515 Stücke:
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Anzahl Preis ohne MwSt
7+2.6 EUR
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100+ 1.72 EUR
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1000+ 1.23 EUR
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DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
Produkt ist nicht verfügbar
DG9232EDY-T1-GE3 dg9232e.pdf
DG9232EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST DUAL 8SOIC
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SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
Produkt ist nicht verfügbar
SISF06DN-T1-GE3
Hersteller: Vishay Siliconix
Description: COMMON-DRAIN DUAL N-CH 30V (S1-S
auf Bestellung 1959 Stücke:
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SIDR680ADP-T1-RE3 sidr680adp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/137A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8DC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Produkt ist nicht verfügbar
DG2723DN-T1-GE4 dg2723.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH DUAL SPDT 10-MINIQFN
Produkt ist nicht verfügbar
SQJ147ELP-T1_GE3 sqj147elp.pdf
SQJ147ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 90A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 23962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.26 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SI7469ADP-T1-RE3 si7469adp.pdf
SI7469ADP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 7.4A/46A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 19.3mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 73.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 40 V
Produkt ist nicht verfügbar
SIR681DP-T1-RE3 sir681dp.pdf
SIR681DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
Produkt ist nicht verfügbar
SUM90N04-3M3P-E3 sum90n043m3p.pdf
SUM90N04-3M3P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 90A TO263
Produkt ist nicht verfügbar
SUM90N04-3M3P-E3 sum90n043m3p.pdf
SUM90N04-3M3P-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 90A TO263
Produkt ist nicht verfügbar
SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SIS932EDN-T1-GE3 sis932edn.pdf
SIS932EDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Produkt ist nicht verfügbar
SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
Produkt ist nicht verfügbar
SQJA34EP-T1_GE3 sqja34ep.pdf
SQJA34EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 75A PPAK SO-8
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
SI2319CDS-T1-BE3 si2319cd.pdf
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.29 EUR
Mindestbestellmenge: 3000
SI2319CDS-T1-BE3 si2319cd.pdf
SI2319CDS-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 3.1A/4.4A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.9 EUR
23+ 0.78 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 20
SIZ256DT-T1-GE3 siz256dt.pdf
SIZ256DT-T1-GE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70 V (D-S) MOSFET
Produkt ist nicht verfügbar
SIRA20BDP-T1-GE3 sira20bdp.pdf
SIRA20BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
auf Bestellung 10920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.78 EUR
10+ 2.28 EUR
100+ 1.77 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 7
SQJ136ELP-T1_GE3 sqj136elp.pdf
SQJ136ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 350A PPAK SO-8
Produkt ist nicht verfügbar
SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.44 EUR
Mindestbestellmenge: 3000
SIZ340BDT-T1-GE3 siz340bdt.pdf
SIZ340BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16.9A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc), 4.2W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Ta), 36A (Tc), 25.3A (Ta), 69.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 15V, 1065pF @ 15V
Rds On (Max) @ Id, Vgs: 8.56mOhm @ 10A, 10V, 4.31mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V, 23.5nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Part Status: Active
auf Bestellung 6089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.01 EUR
100+ 0.7 EUR
500+ 0.58 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 16
SI7252ADP-T1-GE3 si7252adp.pdf
SI7252ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.16 EUR
6000+ 1.11 EUR
9000+ 1.08 EUR
Mindestbestellmenge: 3000
SI7252ADP-T1-GE3 si7252adp.pdf
SI7252ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 9.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.6W (Ta), 33.8W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
auf Bestellung 11508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.57 EUR
10+ 2.13 EUR
100+ 1.7 EUR
500+ 1.44 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 7
SQJB60EP-T2_GE3 sqjb60ep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Produkt ist nicht verfügbar
SQJ910AEP-T2_GE3 sqj910aep.pdf
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 30-V (D-S) 175C M
Produkt ist nicht verfügbar
SQR100N04-3M8R_GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) 175C MOSFET
Produkt ist nicht verfügbar
SQC40016E_DFFR
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Produkt ist nicht verfügbar
SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.29 EUR
6000+ 1.24 EUR
Mindestbestellmenge: 3000
SIR106DP-T1-RE3 sir106dp.pdf
SIR106DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.85 EUR
10+ 2.38 EUR
100+ 1.89 EUR
500+ 1.6 EUR
1000+ 1.36 EUR
Mindestbestellmenge: 7
SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Produkt ist nicht verfügbar
SIR640ADP-T1-GE3 sir640adp.pdf
SIR640ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 41.6A/100A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Produkt ist nicht verfügbar
SUD15N15-95-BE3 sud15n15.pdf
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+1.57 EUR
Mindestbestellmenge: 2000
SUD15N15-95-BE3 sud15n15.pdf
SUD15N15-95-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
auf Bestellung 6310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.48 EUR
10+ 2.9 EUR
100+ 2.3 EUR
500+ 1.95 EUR
1000+ 1.65 EUR
Mindestbestellmenge: 6
SUD35N10-26P-BE3
SUD35N10-26P-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
Produkt ist nicht verfügbar
SUD35N10-26P-BE3
SUD35N10-26P-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 12A, 10V
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.36 EUR
10+ 2.79 EUR
100+ 2.22 EUR
500+ 1.88 EUR
1000+ 1.6 EUR
Mindestbestellmenge: 6
SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
Produkt ist nicht verfügbar
SI7322ADN-T1-GE3 si7322adn.pdf
SI7322ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 15.1A PPAK
auf Bestellung 1241 Stücke:
Lieferzeit 10-14 Tag (e)
SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
SISA72DN-T1-GE3 sisa72dn.pdf
SISA72DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 60A PPAK1212-8
auf Bestellung 5424 Stücke:
Lieferzeit 10-14 Tag (e)
SISS92DN-T1-GE3 siss92dn.pdf
SISS92DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 3.4A/12.3A PPAK
Produkt ist nicht verfügbar
SIHA24N80AE-GE3 siha24n80ae.pdf
SIHA24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.47 EUR
50+ 4.34 EUR
100+ 3.72 EUR
500+ 3.31 EUR
Mindestbestellmenge: 4
SIHG24N80AE-GE3 sihg24n80ae.pdf
SIHG24N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 21A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.48 EUR
25+ 5.13 EUR
100+ 4.39 EUR
500+ 3.91 EUR
Mindestbestellmenge: 3
IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
Produkt ist nicht verfügbar
IRFR1N60ATRPBF-BE3 sihfr1n6.pdf
IRFR1N60ATRPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
auf Bestellung 1869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.46 EUR
10+ 2.04 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 8
SI1902DL-T1-BE3 si1902dl.pdf
SI1902DL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1902DL-T1-BE3 si1902dl.pdf
SI1902DL-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 2964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.7 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 22
SIHFPS37N50A-GE3 sihfps37n50a.pdf
SIHFPS37N50A-GE3
Hersteller: Vishay Siliconix
Description: POWER MOSFET SUPER-247, 130 M @
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5579 pF @ 25 V
auf Bestellung 314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.51 EUR
30+ 8.39 EUR
120+ 7.51 EUR
Mindestbestellmenge: 2
SI1023CX-T1-GE3 si1023cx.pdf
SI1023CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
Mindestbestellmenge: 3000
SI1023CX-T1-GE3 si1023cx.pdf
SI1023CX-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 220mW
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 756mOhm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 59655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
30+ 0.6 EUR
100+ 0.41 EUR
500+ 0.31 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 24
SIHP21N60EF-BE3 sihp21n60ef.pdf
SIHP21N60EF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 21A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Produkt ist nicht verfügbar
SIZF906BDT-T1-GE3 sizf906bdt.pdf
SIZF906BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 36A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.41 EUR
6000+ 1.36 EUR
9000+ 1.31 EUR
Mindestbestellmenge: 3000
SIZF906BDT-T1-GE3 sizf906bdt.pdf
SIZF906BDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 36A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
auf Bestellung 28356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.12 EUR
10+ 2.6 EUR
100+ 2.07 EUR
500+ 1.75 EUR
1000+ 1.48 EUR
Mindestbestellmenge: 6
SIC651ACD-T1-GE3 sic651.pdf
SIC651ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
Produkt ist nicht verfügbar
SIC651ACD-T1-GE3 sic651.pdf
SIC651ACD-T1-GE3
Hersteller: Vishay Siliconix
Description: IC HALF BRIDGE DRIVER 50A PPAK
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: PowerPAK® MLP55-31L
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 3Ohm LS + HS
Applications: General Purpose
Current - Output / Channel: 50A
Current - Peak Output: 100A
Technology: Power MOSFET
Voltage - Load: 24V
Supplier Device Package: PowerPAK® MLP55-31L
Fault Protection: Over Current, Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Part Status: Active
auf Bestellung 2685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.07 EUR
10+ 4.55 EUR
25+ 4.29 EUR
100+ 3.66 EUR
250+ 3.43 EUR
500+ 3 EUR
1000+ 2.67 EUR
Mindestbestellmenge: 4
SQJ476EP-T1_GE3 sqj476ep.pdf
SQJ476EP-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
6000+ 0.53 EUR
9000+ 0.49 EUR
Mindestbestellmenge: 3000
SIS126DN-T1-GE3 sis126dn.pdf
SIS126DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
SIS126DN-T1-GE3 sis126dn.pdf
SIS126DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 12A/45.1A PPAK
auf Bestellung 9215 Stücke:
Lieferzeit 10-14 Tag (e)
SIHH080N60E-T1-GE3 sihh080n60e.pdf
SIHH080N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
Produkt ist nicht verfügbar
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